KR20110042567A - Light emitting device and lighting unit using the same - Google Patents

Light emitting device and lighting unit using the same Download PDF

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Publication number
KR20110042567A
KR20110042567A KR1020090099294A KR20090099294A KR20110042567A KR 20110042567 A KR20110042567 A KR 20110042567A KR 1020090099294 A KR1020090099294 A KR 1020090099294A KR 20090099294 A KR20090099294 A KR 20090099294A KR 20110042567 A KR20110042567 A KR 20110042567A
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KR
South Korea
Prior art keywords
light emitting
light
resin layer
optical film
emitting chip
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Application number
KR1020090099294A
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Korean (ko)
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KR101637569B1 (en
Inventor
안영주
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엘지이노텍 주식회사
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Priority to KR1020090099294A priority Critical patent/KR101637569B1/en
Priority claimed from US12/906,572 external-priority patent/US8517552B2/en
Publication of KR20110042567A publication Critical patent/KR20110042567A/en
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Publication of KR101637569B1 publication Critical patent/KR101637569B1/en

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Abstract

The light emitting device according to the embodiment includes a light emitting chip; And an optical film including at least one kind of phosphors excited by light emitted from the light emitting chip, and the light passing through the optical film has a color rendering index (CRI) of 85 to 100.

Description

LIGHT EMITTING DEVICE AND LIGHTING UNIT USING THE SAME}

An embodiment relates to a light emitting device and a light unit using the same.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. Light emitting diodes have the advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Accordingly, many researches are being conducted to replace existing light sources with light emitting diodes, and the use of light emitting diodes is increasing as a light source for light units such as various lamps, display devices, electronic signs, and street lamps that are used indoors and outdoors.

On the other hand, a lot of research is being conducted to change the wavelength of light emitted from the light emitting diode to emit light of a desired wavelength.

The embodiment provides a light emitting device having an improved color rendering index and a light unit using the same.

The embodiment provides a light emitting device having a simple structure and a light unit using the same.

The light emitting device according to the embodiment includes a light emitting chip; And an optical film including at least one kind of phosphors excited by light emitted from the light emitting chip, and the light passing through the optical film has a color rendering index (CRI) of 85 to 100.

According to an embodiment, a light unit includes a light emitting chip; An optical film including at least one type of phosphor excited by light emitted from the light emitting chip; And a light diffusion unit for diffusing the light passing through the optical film, and the light passing through the optical film has a color rendering index (CRI) of 85 to 100.

The embodiment can provide a light emitting device having an improved color rendering index and a light unit using the same.

The embodiment can provide a light emitting device having a simple structure and a light unit using the same.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device and a light unit using the same according to an embodiment will be described with reference to the accompanying drawings.

1 is a view showing a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device may include a light emitting chip 100 and an optical film 1 including at least one kind of phosphor excited by light emitted from the light emitting chip 100.

The light emitting chip 100 may include, for example, a light emitting diode (LED), but is not limited thereto.

The light emitting diode may be, for example, a red, green, blue or white light emitting diode that generates red, green, blue or white light.

In general, light emitting diodes (LEDs) are semiconductor devices that generate light according to energy band gap differences between nitride semiconductor layers. However, since the light emitting diode generates only light of a predetermined wavelength band according to the energy band gap difference, the color rendering index (CRI) is low, and thus it is difficult to be applied to an environment requiring high quality light.

Therefore, in the embodiment, the light emitted from the light emitting chip 100 passes through the optical film 1, thereby securing a high color rendering index (CRI) of 85 to 100.

That is, the light passing through the optical film 1 excites at least one kind of phosphor contained in the optical film 1 to generate excitation light, and the excitation light is emitted from the light emitting chip 100. Color rendering index (CRI) of light can be improved.

Meanwhile, the type and amount of the phosphor included in the optical film 1 may be selected according to the color temperature of light generated by the light emitting chip 100.

Hereinafter, the optical film 1 will be described in detail.

2 is a diagram illustrating an example of the optical film 1.

Referring to FIG. 2, the optical film 1 includes a base film 10, a matrix resin layer 20 on the base film 10, a protective resin layer 30 on the matrix resin layer 20, A protective film 40 on the protective resin layer 30, an adhesive member 50 on the protective film 40 and a release film 60 on the adhesive member 50 may be included.

The base film 10 is preferably formed of a resin material having good light transmittance and heat resistance, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), acrylic resin, It may be selectively formed from the group consisting of polycarbonate (PC), polystyrene (PS), polymethyl methacrylate (PMMA) and the like.

Specifically, the material of the base film 10 may be selected according to the use of the optical film 1, for example, polyethylene terephthalate having a light transmittance of 90% or more when high light transmittance is required. (PET) can be used. In addition, when heat resistance and chemical resistance are required, the base film 10 may be formed of polycarbonate. However, the material of the base film 10 is not limited.

The base film 10 may have a thickness of, for example, 10 μm to 500 μm, and preferably 20 μm to 30 μm. This is because a film of 10 μm or less is difficult to handle, and a film of 500 μm or more may have a low light transmittance. However, this is not limitative.

The matrix resin layer 20 may be formed on the base film 10.

The matrix resin layer 20 is preferably formed of a material having a good light transmittance, viscosity, curing temperature and the like. Since the optical film 1 can be applied to a light source that emits light at a high temperature, it is necessary to maintain a good light transmittance, viscosity and hardness even at a high temperature.

Specifically, the matrix resin layer 20 may have a light transmittance of 85% or more, may be cured at 120 ° C. or less, and may have a viscosity of 3000 cps or more and may be formed of a material having good adhesiveness with the base film 10. . For example, the matrix resin layer 20 may be formed of at least one of a resin material and a silicon material. Preferably, the matrix resin layer 20 may be formed of a silicone resin.

The matrix resin layer 20 may have a thickness of 20 μm to 500 μm, and preferably 30 μm to 50 μm. The matrix resin layer 20 having such a thickness range may be easily mixed with a phosphor, a diffusing agent, an antifoaming agent, and the like, which may stably transmit light, and is easily coated on the base film 10. Can be.

The matrix resin layer 20 may include a phosphor. For example, the phosphor may be included in the matrix resin layer 20 by being mixed with the liquid matrix resin layer 20 and stirred using a stirrer.

The phosphor is excited by the light emitted by the light emitting chip 100 and emits excitation light. For example, at least one of silicate, YAG, and TAG series may be used.

The phosphor may include at least one of yellow, red, green, and blue phosphors which are excited by light emitted from the light emitting chip 100 and emit yellow, red, green, and blue excitation light. It does not limit about kind.

The phosphor may be included in the matrix resin layer 20 in a different kind and amount depending on the color temperature of the light emitting chip 100 to which the optical film 1 is applied. This is because the intensity of the excitation light of the phosphor is determined differently according to the color temperature of light emitted from the light emitting chip 100.

The phosphor improves the color rendering index (CRI) of the light emitting chip 100, thereby allowing the light emitting device to provide high quality light.

3 is a table showing the type and amount of phosphors included in the optical film 1 according to the color temperature of the light emitting chip 100, and FIGS. 4 to 9 illustrate the case where the optical film 1 is applied. A graph showing the color rendering index (CRI) change of the light emitting device.

3, 4, and 5, when the color temperature of the light emitting chip 100 is 3000K, the optical film 1 may have a main weight with respect to 100 parts by weight (wt%) of the matrix resin layer 20. 30 to 40 parts by weight of the red (R) phosphor having a wavelength of 650 nm and 30 to 40 parts by weight of the green (G) phosphor having a main wavelength of 515 nm may be included.

As shown in FIG. 4, the light emitted from the light emitting chip 100 has a relatively low intensity of light around 515 nm and around 650 nm, and thus has a low color rendering index (CRI). Therefore, the red (R) and green (G) phosphors having main wavelengths of 515 nm and 650 nm are included in the optical film 1 so that the light emitting device has a color rendering index (CRI) of approximately 92 as shown in FIG. 5. can do.

3, 6, and 7, when the color temperature of the light emitting chip 100 is 4000K, the optical film 1 may have a main weight with respect to 100 parts by weight (wt%) of the matrix resin layer 20. 15 to 25 parts by weight of the red (R) phosphor having a wavelength of 650 nm and 15 to 25 parts by weight of the green (G) phosphor having a main wavelength of 515 nm may be included.

As shown in FIG. 6, the light emitted from the light emitting chip 100 has a relatively low intensity of light around 515 nm and around 650 nm, and thus has a low color rendering index (CRI). Therefore, the red (R) and green (G) phosphors having main wavelengths of 515 nm and 650 nm are included in the optical film 1 such that the light emitting device has a color rendering index (CRI) of approximately 90 as shown in FIG. 7. can do.

3, 8, and 9, when the color temperature of the light emitting chip 100 is 5000K, the optical film 1 may have a main weight with respect to 100 parts by weight (wt%) of the matrix resin layer 20. 5 to 15 parts by weight of the red (R) phosphor having a wavelength of 650 nm and 8 to 18 parts by weight of the green (G) phosphor having a main wavelength of 515 nm may be included.

As shown in FIG. 8, the light emitted from the light emitting chip 100 has a relatively low intensity of light around 515 nm and around 650 nm, and thus has a low color rendering index (CRI). Therefore, the red (R) and green (G) phosphors having main wavelengths of 515 nm and 650 nm are included in the optical film 1 so that the light emitting device has a color rendering index (CRI) of approximately 92 as shown in FIG. 9. can do.

However, the type and amount of the phosphor may vary according to the type and color temperature of the light emitting chip 100, but is not limited thereto.

Meanwhile, the matrix resin layer 20 may further include at least one of a diffusing agent, an antifoaming agent, an additive, and a curing agent.

The diffusion agent may be diffused by scattering light incident on the matrix resin layer 20. The diffusion agent is, for example, silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), zinc oxide (ZnO), barium sulfate (BaSO 4 ), calcium carbonate (CaSO 4 ), magnesium carbonate (MgCO 3 ), hydroxide It may include, but is not limited to, aluminum (Al (OH) 3 ), synthetic silica, glass beads, diamond.

The particle size of the diffusion agent may be selected to a size suitable for the diffusion of light, for example, may be formed to have a diameter of 5 ~ 7μm.

The antifoaming agent may improve the reliability of the optical film 1 by removing bubbles in the matrix resin layer 20. In particular, when the matrix resin layer 20 is applied on the base film 10 by a screen printing method, a problem of bubbles may be solved.

The antifoaming agent may include at least one of octanol, cyclohexanol, ethylene glycol or various surfactants, but is not limited thereto.

The curing agent may cure the matrix resin layer 20, and the additive may be used to evenly disperse the phosphor in the matrix resin layer 20.

The protective resin layer 30 may be formed on the matrix resin layer 20.

The protective resin layer 30 may be formed of a resin material and / or a silicon material having good light transmittance, heat resistance, and adhesion.

In particular, the protective resin layer 30 is preferably formed of a material having good adhesion to the protective film 40 formed, for example, the protective resin layer 30 has a light transmittance of 85% Above, it can be formed of a silicone resin excellent in heat resistance and adhesion.

The protective resin layer 30 may have a thickness of, for example, 20 μm to 50 μm, but is not limited thereto.

When the protective film 40 is directly formed on the matrix resin layer 20, the adhesive force between the matrix resin layer 20 and the protective film 40 is insufficient, so that two layers are formed. A phenomenon such as penetration of moisture between the layers may occur, which may be a factor that impairs the reliability of the optical film.

Therefore, in the embodiment, by forming the protective resin layer 30 between the matrix resin layer 20 and the protective film 40, the adhesion to the protective film 40 is firmly secured to the optical film 1 Can improve the reliability.

Specifically, first, the protective resin layer 30 in a semi-cured state (B-stage) on the matrix resin layer 20, and the protective film on the protective resin layer 30 in the semi-cured state By attaching the 40 to the protective resin layer 30, the protective film 40 is firmly adhered to the protective resin layer 30, and the reliability of the optical film 1 can be improved. Can be.

In addition, when forming the protective resin layer 30 as in the embodiment, there is an effect of protecting the phosphor contained in the matrix resin layer 20. That is, the protective resin layer 30 may buffer the transfer of heat generated from the light emitting chip 100 to the phosphor, thereby reducing the phenomenon in which the phosphor is degraded by heat. In particular, in the case of the red phosphor generally has a property that is vulnerable to heat, the protective effect of the phosphor by the protective resin layer 30 may be more apparent.

The protective film 40 may be formed on the protective resin layer 30. The protective film 40 may protect the matrix resin layer 20 to improve the reliability of the optical film 1.

The protective film 40 may be formed of the same material as the base film 10. For example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), acrylic resin, poly It may be selectively formed from the group consisting of carbonate (PC), polystyrene (PS), polymethyl methacrylate (PMMA) and the like.

In addition, the thickness of the protective film 40 may be, for example, 10 μm to 500 μm, preferably 25 μm.

The adhesive member 50 may be formed on the protective film 40.

The adhesive member 50 may include a body layer 51 and a first adhesive layer 52a and a second adhesive layer 52b on both surfaces of the body layer 51.

The second adhesive layer 52b is formed between the body layer 51 and the protective film 40 to adhere the two layers to each other.

In addition, the first adhesive layer 52a may be formed on the body layer 51 to attach the optical film 1 to the light emitting chip 100.

The adhesive member 50 may be separately prepared and attached to the protective film 40, or may be formed by sequentially laminating the protective film 40, but is not limited thereto. In addition, when the adhesive member 50 is not necessary, it may not be formed, but is not limited thereto.

10 is a diagram illustrating another example of the optical film 1.

Referring to FIG. 10, the optical film 1 may include a matrix resin layer 20 on the base film 10, the base film 10, and an adhesive resin layer 30 on the matrix resin layer 20. It may include.

Descriptions of the base film 10 and the matrix resin layer 20 are omitted because they overlap with those described above.

The adhesive resin layer 30 may have a good light transmittance and heat resistance, and may be formed of a resin material and / or a silicone material having particularly excellent adhesiveness.

For example, the adhesive resin layer 30 may be formed of a silicone resin, preferably, a solvent type silicone resin containing toluene. Since the silicone resin containing toluene has excellent adhesiveness and high light transmittance, it is not necessary to form a separate adhesive member for attaching the optical film 1 to the light emitting chip 100.

That is, by forming the adhesive resin layer 30, not only the manufacturing process of the optical film 1 is simplified, but also the thickness of the optical film 1 becomes thin, thereby transmitting the optical film 1. The light loss of the light can also be reduced.

The light transmittance of the silicone resin including toluene may be at least 90%, and the viscosity may be 2000 to 10000 cps (centipoise).

On the other hand, it is preferable that the thickness of the said adhesive resin layer 30 is formed in 20 micrometers-100 micrometers, for example.

The adhesive resin layer 30 having such a thickness buffers the transfer of heat generated from the light emitting chip 100 to the phosphor contained in the matrix resin layer 20, and the phosphor deteriorates by heat. This can reduce the phenomenon. In particular, since the red phosphor has a property that is vulnerable to heat, the phosphor protection effect by the adhesive resin layer 30 may be more pronounced.

In the case where the adhesive resin layer 30 includes toluene having volatility, the adhesive resin layer 30 is formed on the matrix resin layer 20 in a semi-cured state (B-stage), and then does not use an additional curing agent. It can harden | cure by adding heat with a dryer etc. and drying. However, the adhesive resin layer 30 may be cured by adding a curing agent, but is not limited thereto.

11 is a view illustrating a light unit including the light emitting device.

Referring to FIG. 11, the light unit includes the light emitting chip 100, an optical film 1 including at least one type of phosphor excited by light emitted from the light emitting chip 100, and the optical film 1. It may include a light diffusion unit for diffusing the light passing through the).

In this case, the light diffusion part includes a light guide plate 200 for surface-lightening the light passing through the optical film 1, a diffusion sheet 400 formed on the light guide plate 200, and the light guide plate 200. It may include a reflective sheet 300 installed below to reflect light toward the exit surface of the light guide plate 200.

As shown, the optical film 1 may be formed between the light emitting chip 100 and the light guide plate 200. In this case, the optical film 1 may be attached to the exit surface of the light emitting chip 100 or may be attached to the light guide plate 200, but is not limited thereto.

The light unit is not limited to providing light in an edge method, but may be provided in a top view method.

The light unit may include the light emitting chip 100 and the optical film 1 to provide high quality light having a high color rendering index (CRI). In addition, the use of the optical film 1 has an effect of minimizing the quantity of the light emitting chip 100 required to implement a high color rendering index (CRI).

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a view showing a light emitting device according to an embodiment.

It is a figure which shows an example of the optical film which concerns on an Example.

3 is a table showing the type and amount of phosphors included in the optical film according to the embodiment according to the color temperature of the light emitting chip.

4 to 9 are graphs showing a change in color rendering index (CRI) of the light emitting device according to the embodiment when the optical film according to the embodiment is applied.

10 is a view showing another example of an optical film according to the embodiment.

11 is a view illustrating a light unit including a light emitting device according to an embodiment.

Claims (15)

  1. Light emitting chip; And
    An optical film including at least one kind of phosphors excited by light emitted from the light emitting chip,
    The light passing through the optical film has a color rendering index (CRI) of 85 to 100.
  2. The method of claim 1,
    The light emitting chip includes a light emitting diode, and the light emitting diode includes at least one of red, green, blue, or white light emitting diodes that generate red, green, blue, or white light.
  3. The method of claim 1,
    The type and amount of phosphor contained in the optical film is differently selected according to the color temperature of the light emitted from the light emitting chip.
  4. The method of claim 1,
    The optical film includes a base film, a matrix resin layer on the base film, and an adhesive member on the matrix resin layer,
    At least one kind of phosphor is contained in the matrix resin layer.
  5. The method of claim 4, wherein
    The matrix resin layer includes a red phosphor and a green phosphor.
  6. The method of claim 5,
    The main wavelength of the red phosphor is 650 nm, the main wavelength of the green phosphor is 515 nm.
  7. The method of claim 5,
    When the color temperature of the light emitting chip is 3000K,
    A light emitting device comprising 30 to 40 parts by weight of the red phosphor and 30 to 40 parts by weight of the green phosphor with respect to 100 parts by weight (wt%) of the matrix water resin layer.
  8. The method of claim 5,
    When the color temperature of the light emitting chip is 4000K,
    15 to 25 parts by weight of the red phosphor and 15 to 25 parts by weight of the green phosphor with respect to 100 parts by weight (wt%) of the matrix water resin layer.
  9. The method of claim 5,
    When the color temperature of the light emitting chip is 5000K,
    A light emitting device comprising 5 to 15 parts by weight of the red phosphor and 8 to 18 parts by weight of the green phosphor with respect to 100 parts by weight (wt%) of the matrix water resin layer.
  10. The method of claim 4, wherein
    The matrix resin layer has a thickness of 20 μm to 500 μm.
  11. The method of claim 4, wherein
    The matrix resin layer is formed of at least one of a silicon material and a resin material.
  12. Light emitting chip;
    An optical film including at least one type of phosphor excited by light emitted from the light emitting chip; And
    It includes a light diffusion unit for diffusing the light passing through the optical film,
    Light passing through the optical film has a color rendering index (CRI) of 85 to 100.
  13. The method of claim 12,
    The light diffusion unit includes at least one of a light guide plate and a diffusion sheet for diffusing light passing through the optical film.
  14. The method of claim 12,
    And the optical film is attached to an exit surface of the light emitting chip.
  15. The method of claim 13,
    The optical film is attached to the light guide plate.
KR1020090099294A 2009-10-19 2009-10-19 Light emitting device and lighting unit using the same KR101637569B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090099294A KR101637569B1 (en) 2009-10-19 2009-10-19 Light emitting device and lighting unit using the same

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR1020090099294A KR101637569B1 (en) 2009-10-19 2009-10-19 Light emitting device and lighting unit using the same
US12/906,572 US8517552B2 (en) 2009-10-19 2010-10-18 Optical film and light emitting device using the same
EP13151380.6A EP2587284B1 (en) 2009-10-19 2010-10-18 Optical film and light unit
EP10187960A EP2312346B1 (en) 2009-10-19 2010-10-18 Optical film and a method for fabricating the same
JP2010234732A JP5782246B2 (en) 2009-10-19 2010-10-19 Optical film and method for producing the same
CN201010515815.5A CN102082224B (en) 2009-10-19 2010-10-19 Blooming and the luminescent device that comprises blooming
CN201610204897.9A CN105911623B (en) 2009-10-19 2010-10-19 Optical film and the luminescent device including optical film
US13/956,589 US8727577B2 (en) 2009-10-19 2013-08-01 Optical film and lighting device

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KR20110042567A true KR20110042567A (en) 2011-04-27
KR101637569B1 KR101637569B1 (en) 2016-07-20

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114909A (en) * 2004-10-14 2006-04-27 Agilent Technol Inc Flash module
KR20090032826A (en) * 2007-09-28 2009-04-01 (주) 이지닉스 White light emitting apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114909A (en) * 2004-10-14 2006-04-27 Agilent Technol Inc Flash module
KR20090032826A (en) * 2007-09-28 2009-04-01 (주) 이지닉스 White light emitting apparatus

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