KR20110042162A - Luminous element having arrayed cells and method of manufacturing thereof and luminous apparatus using the same - Google Patents

Abstract

PURPOSE: A light emitting device combined with a plurality of cells, a manufacturing method thereof, and a light emitting device using the same are provided to improve the light emission efficiency by connecting the electrode of light emitting device chip and the predetermined rectifying circuit. CONSTITUTION: A light emitting device comprises a substrate and a plurality of light emitting cells. A plurality of light emitting cells is formed on the top of the substrate. A plurality of light emitting cells comprises a semiconductor layer(20) and a first electrode(30). The plurality of light emitting cells comprises a bridge lighting-emitting area and a light emitting cell array part.

Description

Luminous element having arrayed cells and method of manufacturing application and luminous apparatus using the same}

The present invention relates to a light emitting device in which a plurality of cells are combined, a method of manufacturing the same, and a light emitting device using the same. The present invention also relates to a light emitting device manufactured using the same.

A light emitting diode refers to a device that generates a small number of carriers (electrons or holes) injected using a p-n junction structure of a semiconductor, and emits predetermined light by recombination thereof. Such light emitting diodes are used as display devices and backlights, and active research is being conducted to apply them to general lighting applications.

This is because light emitting diodes consume less power and have a longer lifetime than conventional light bulbs or fluorescent lamps. That is, the power consumption of the light emitting diode is only a few to several tens of the conventional lighting device, the life span is several to several tens of times, the power consumption is excellent in terms of saving power and durability.

In general, in order to use a light emitting diode for lighting, a light emitting device is formed through a separate packaging process, a plurality of individual light emitting devices are connected in series through wire bonding, and a protective circuit and an AC / DC converter are installed from the outside. Made in the form of a lamp.

1 is a conceptual diagram illustrating a conventional light emitting device.

Referring to FIG. 1, a plurality of light emitting devices 1 mounted with light emitting chips are connected in series to manufacture a light emitting device for general lighting. To this end, a plurality of light emitting devices 1 are arranged in series, and then light emitting chips inside different light emitting devices 1 are electrically connected in series through a metallization process. Such a manufacturing process is disclosed in US Patent No. 5,463,280. However, when the light emitting device for lighting use is manufactured by the conventional technique through the above-described structure, a large number of devices have to be performed in a metal wiring process, which causes a problem of increasing process steps and complexity. In addition, as the stage of the process increases, the defect occurrence rate also increases, which is an obstacle to mass production. In addition, the metal wire may be shorted due to a predetermined impact to terminate the operation of the light emitting device. In addition, since the space occupied by the individual light emitting devices must be arranged in series, the size of the lamp is considerably increased.

In addition, Korean Patent Application Publication No. 2004-9818 discloses an array of microchips at the wafer level instead of the above-described light emitting chip array at the device level. This relates to a display device, in which light emitting cells are arranged in a matrix so that light emitting diodes for inducing light emission are disposed in each pixel. However, in order to emit light of the elements arranged in the matrix form described above, it is extremely difficult to control the electric signals in the vertical direction and the horizontal direction, as well as to apply the electric signals in the addressing manner. . In addition, due to the matrix arrangement, disconnection between the wirings is concerned, and much interference occurs in the overlapping area between the wirings. In addition, the above-described matrix structure has a problem that can not be applied to the light emitting device for applying a high voltage.

Therefore, in order to solve the above problems, a light emitting diode lamp can be manufactured using a light emitting device in a single chip form in which a plurality of light emitting cells are connected in series, and the plurality of light emitting cells are electrically connected at the wafer level. It is an object of the present invention to provide a light emitting device in which a plurality of cells are arrayed, and a method of manufacturing the same and a light emitting device using the same.

The present invention provides a light emitting device including a host substrate and a plurality of vertical light emitting cells connected in series or in parallel with the host substrate.

Here, the host substrate is characterized in that it is composed of any one of a conductor, a non-conductor, and a semiconductor substrate. In this case, an electrode pattern layer is formed between the non-conductive host substrate and the plurality of light emitting cells, and an insulating layer is provided between the conductor or semiconductor host substrate and the light emitting cell on the host substrate side. The electrode pattern layer is interposed on the light emitting cell side.

The plurality of vertical light emitting cells each include a GaN-based semiconductor.

In addition, growing a compound semiconductor on the mother substrate according to the present invention, after forming the compound semiconductor into a plurality of vertical light emitting cells, and forming a first electrode on top of each vertical light emitting cell and And attaching a host substrate to the upper portion of the vertical light emitting cell, forming a second electrode under each of the vertical light emitting cells after removing the mother substrate, and first electrodes of the vertical light emitting cells. It provides a light emitting device manufacturing method comprising the step of connecting the second electrode of the vertical light emitting cell adjacent to the series or in parallel.

Here, when the host substrate is a conductor or a semiconductor substrate, further comprising the step of forming an insulating layer between the host substrate and the first electrode of the vertical light emitting cell.

In addition, growing a compound semiconductor on the mother substrate according to the present invention, forming the compound semiconductor into a plurality of vertical light emitting cells, and attaching a host substrate on top of the plurality of vertical light emitting cells; It provides a light emitting device manufacturing method comprising the step of connecting each of the vertical light emitting cells in series or in parallel with the adjacent vertical light emitting cells.

At this time, the mother substrate is characterized in that the laser is removed by a lift-off process, an etching process, or a CMP process.

As described above, the present invention can produce a light emitting device that can be used for illumination through a light emitting element comprising a light emitting cell block in which a plurality of vertical light emitting cells are connected in series.

In addition, since a plurality of light emitting cells are electrically connected at the wafer level, a light emitting device capable of emitting light from a high power source or a home AC power source can be manufactured.

In addition, since a plurality of light emitting cells use light emitting elements electrically connected on a substrate, the manufacturing process of the lighting light emitting device can be simplified, and if the defect rate occurring during the manufacturing of the lighting light emitting device can be reduced, mass production of the lighting light emitting device can be performed. have.

In addition, it is possible to protect the light emitting device chip by connecting the electrodes of the light emitting device chip with a predetermined rectifier circuit to minimize the ripple factor during the AC operation to maximize the light emitting efficiency and to adjust the load applied to the LED array through the installation of the lowering element. .

1 is a conceptual diagram illustrating a conventional light emitting device.
2 and 3 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.
5 to 11 are conceptual views illustrating light emitting devices according to first to seventh exemplary embodiments of the present invention, respectively.
12 is a conceptual diagram illustrating a light emitting device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like numbers refer to like elements in the figures.

In the present invention, a plurality of vertical light emitting cells are formed on the substrate. Thereafter, the host substrate is bonded to the top of the plurality of vertical light emitting cells, and then the parent substrate is removed. Thereafter, different electrodes between adjacent cells of the plurality of vertical light emitting cells are electrically connected. That is, the light emitting device is formed by connecting the light emitting cells in series. The structure of the vertical light emitting cell will be briefly described. The structure includes a light emitting semiconductor layer, first and second electrodes disposed above and below the light emitting semiconductor layer, and a host substrate including an electrode pattern connected to the first electrode. Of course, according to the characteristics of the host substrate may further include a separate insulating layer between the electrode pattern and the host substrate. Various manufacturing methods may be provided to manufacture a light emitting device in which light emitting cells having such a structure are connected in series.

Detailed description thereof will be described with reference to the following drawings.

2 and 4 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 2, a plurality of separate light emitting cells 100 including a semiconductor layer 20 and a first electrode 30 are formed on a mother substrate 10, and a predetermined electrode pattern 50 is formed. The host substrate 40 is prepared.

As the mother substrate 10, any substrate capable of manufacturing a semiconductor element can be used. In this embodiment, a sapphire substrate or a silicon substrate is used.

The light emitting semiconductor layer 20 has a structure composed of a plurality of material layers. That is, in the present embodiment, a buffer layer (not shown), an N-type semiconductor layer (not shown), an active layer (not shown), and a P-type semiconductor layer (not shown) are sequentially stacked. In addition, the first electrode 30 refers to a predetermined conductive pad, and each of the light emitting semiconductor layers 20 is spaced a predetermined distance apart.

To this end, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially formed on the mother substrate 10. In this case, the buffer layer is a layer for reducing lattice mismatch between the mother substrate 10 and subsequent layers during crystal growth, and includes GaN as a semiconductor material. Of course, at this time, the buffer layer may not be formed. The N-type semiconductor layer is a layer in which electrons are generated, and is formed of an N-type compound semiconductor layer and an N-type cladding layer. At this time, the N-type compound semiconductor layer uses GaN doped with N-type impurities. The P-type semiconductor layer is a layer in which pores are formed and is formed of a P-type cladding layer and a P-type compound semiconductor layer. At this time, AlGaN doped with P-type impurities is used for the P-type compound semiconductor layer. Finally, the active layer is a region where electrons and holes are recombined by forming a predetermined band gap and a quantum well, and include InGaN. In this case, the emission wavelength generated by the combination of electrons and holes is changed according to the type of material forming the active layer. Therefore, it is preferable to adjust the semiconductor material contained in an active layer according to the target wavelength.

Thereafter, a predetermined electrode film is formed on the P-type semiconductor layer, and then the first electrode separated by etching the electrode film, the P-type semiconductor layer, the active layer, the N-type semiconductor layer, and the buffer layer through an etching process using a predetermined mask ( 30 and the light emitting semiconductor layer 20 are formed.

Meanwhile, the host substrate 40 having the predetermined electrode pattern 50 formed on the surface is manufactured by forming a conductive material film on the lower surface of the host substrate 40 and then removing the conductive material film using a predetermined mask. Of course, a predetermined seed pattern may be formed on the host substrate 40 and then formed through a metal plating method. It may also be formed using a printed circuit method.

3 and 4, the first electrode 30 is bonded to the electrode pattern 50 of the host substrate 40 on which the electrode pattern 50 is formed as described above. To this end, the electrode pattern 50 formed on the surface of the host substrate 40 is formed larger than the lower first electrode 30, and each of the electrode patterns 50 and the first electrode 30 are physically adjacent to each other. And electrically separated. In addition, in order to bond between the electrode pattern 50 on the surface of the host substrate 40 and the first electrode 30, a separate conductive paste is used for bonding. Of course, it is possible to bond the two using a variety of other bonding methods. In addition, as shown in FIG. 3, a portion of the electrode pattern 50 protrudes in one direction above the first electrode 30, thereby making it possible to better connect the subsequent electrodes.

Next, the mother substrate 10 is removed, and the second electrode 60 is formed under the light emitting semiconductor layer 20 in the region where the mother substrate 10 is removed, thereby forming a plurality of substrates under the host substrate 40. The vertical light emitting cell 100 is formed. At this time, the removal of the lower mother substrate 10 is removed through a lift off process using a laser. Of course, it may be removed through an etching process or a CMP process used in the semiconductor manufacturing process. As the mother substrate 10 is removed, the light emitting semiconductor layer 20 on the mother substrate 10 is exposed. Thereafter, the mother substrate 10 is removed through a predetermined electrode pad forming process to form a second electrode 60 on the exposed light emitting semiconductor layer 20 to manufacture individual vertical light emitting cells 100.

Finally, different electrodes between the adjacent individual vertical light emitting cells 100 are electrically connected using the wiring 70. That is, as shown in FIG. 3, the plurality of vertical light emitting cells 100 are connected by connecting between the electrode pattern 50 formed under the mother substrate 10 and the second electrode 60 of the light emitting cell 100 adjacent thereto. This series-connected light emitting element is formed. In this case, the electrode pattern 50 and the second electrode 60 of each of the light emitting cells 100 at both edges may further include separate external terminals.

In addition, the electrode described above may use a conductive material film, but may use any material having electrical conductivity.

In the above-described embodiment of the present invention, the case of the non-conductive material having no electric conductivity as the host substrate has been described. However, the present invention is not limited thereto, and a conductive material or a semiconductor material may be used as the host substrate. In addition, the electrode pattern of the host substrate may be used as the first electrode without forming the first electrode, and the light emitting cell having the first electrode may be directly mounted on the host substrate without forming the electrode pattern on the host substrate. . This is described below.

5A to 5C are cross-sectional views illustrating a method of manufacturing a light emitting device according to another exemplary embodiment of the present invention.

Referring to FIG. 5A, when SiC, Si, or metal is used as the host substrate 40, a predetermined insulating layer 45 made of an insulator insulating material is formed on the surface thereof, and then, on the insulating layer 45. The electrode pattern 50 described in the embodiment is formed. In addition, the light emitting semiconductor layer 20 and the first electrode 30 formed on the mother substrate described with reference to FIG. 2 (see number 10 in FIG. 2) are bonded to the electrode pattern 50. Subsequently, after removing the lower mother substrate, the second electrode 60 is formed under the exposed light emitting semiconductor layer 20.

Then, different electrodes between adjacent light emitting cells are connected by wire bonding or metallization. In this case, the first electrode 30 and the second electrode 60 of the adjacent cell are electrically connected in series with the electrode pattern 50 of the host substrate 40 through a separate wiring 70.

Referring to FIG. 5B, a host substrate 40 having a predetermined electrode pattern 50 is provided, and only the light emitting semiconductor layer 20 is formed on the mother substrate (see No. 10 of FIG. 2) described in FIG. 2. In this embodiment, the first electrode (see number 30 of FIG. 2) is not formed. Next, the light emitting semiconductor layer 20 is bonded to the electrode pattern 50 of the host substrate 40. At this time, it bonds using an electrically conductive paste. Subsequently, after removing the lower mother substrate, the second electrode 60 is formed under the exposed light emitting semiconductor layer 20.

Thereafter, the electrode patterns 50 and the second electrodes 60 of the neighboring light emitting cells 100 are electrically connected in series using separate wires 70 through wire bonding or metal wiring processes.

Referring to FIG. 5C, a host substrate 40 is provided, and a plurality of separate cells including the semiconductor layer 20 and the first electrode 30 described with reference to FIG. 2 are provided. Next, the first electrode 30 is bonded to the host substrate 40. Thereafter, the lower mother substrate is removed, and then a part of the exposed light emitting semiconductor layer 20 is removed to expose a part of the first electrode 30. Thereafter, the second electrode 60 is formed on the light emitting semiconductor layer 20 opposite to the first electrode 30.

Next, different electrodes between adjacent light emitting cells 100 are connected through a wire bonding or metallization process. In this case, the first electrode 30 and the second electrode of the adjacent cell are electrically connected in series through separate wires 70.

The embodiments of the present invention described above are not limited to the embodiments, and various modifications are possible. That is, in the formation of the light emitting semiconductor layer 20, a plurality of semiconductor films may be further added. In order to connect the adjacent light emitting cells 100, a separate insulating film is formed to electrically isolate the adjacent cells. The electrodes may be exposed and connected to each other by a predetermined wiring 70. In addition, the first electrode / electrode pattern 30/50 and the second electrode 60 of the adjacent light emitting cells 100 may be electrically connected to each other through a process such as a bridge process or step coverage. The conductive wiring 70 to be connected is formed.

The bridge process described above is also referred to as an air bridge process, by using a photo process between the chips to be connected to each other by using a photo process to form a photoresist pattern, and then forming a material such as metal on the first thin film by a method such as vacuum deposition, Again, a conductive material containing gold is applied to a predetermined thickness by plating or metal deposition. Subsequently, when the photoresist pattern is removed with a solution such as a solvent, the lower portion of the conductive material is removed and only the bridge-shaped conductive material is formed in the space.

In addition, the step coverage process applies a photoresist between the chips to be connected to each other using a photo process, and develops, leaving only the portions to be connected to each other and covering the other portions with a photoresist pattern, and a conductive material containing gold by plating or metal deposition thereon. Apply to a certain thickness. Subsequently, when the photoresist pattern is removed with a solution such as a solvent, all portions other than the conductive material are covered and only the covered portions remain to electrically connect the chips to be connected. In addition, as the wiring, all materials having conductivity as well as metal may be used.

A separate pad (that is, an external terminal electrode) is attached to each of the electrode pattern 50 and the second electrode 60 connected to the first electrode 30 of the light emitting cell 100 positioned at one end of the light emitting device of the present invention. It is formed to receive a predetermined power from the outside.

In addition, the number of the vertical light emitting cells 100 constituting the light emitting device of the present invention may be effectively formed by the number of voltages capable of alternating current driving. That is, according to the present invention, the number of light emitting cells 100 connected in series may vary depending on the voltage / current for driving the single light emitting cell 100 and the AC driving voltage applied to the light emitting device. Of course, preferably 10 to 1000 light emitting cells are connected in series. More preferably, it is effective to connect 30 to 70 cells in series. For example, in the domestic 220V AC drive, a light emitting device is manufactured by connecting 66 to 67 unit light emitting diode cells of 3.3V in series to a constant driving current. In addition, in the 110V AC driving, 33 to 34 3.3V unit light emitting diode cells are connected in series to a constant driving current to manufacture a light emitting device.

In addition, the above-described light emitting device may be formed with a rectifying first to fourth diode (not shown) for rectifying the external AC voltage. The first to fourth diodes are arranged in the form of a rectifying bridge. Rectifying nodes between the first to fourth diodes may be connected to the N-type pads and the P-type pads of the light emitting cells, respectively. Light emitting cells may be used as the first to fourth diodes. This will be described later.

Hereinafter, the light emitting device of the present invention will be described with reference to a predetermined circuit conceptual diagram.

6 is a conceptual diagram illustrating a light emitting device according to a first embodiment of the present invention.

Referring to FIG. 6, in the light emitting device 200 according to the present embodiment, a plurality of light emitting cell blocks 100 connected in series are electrically connected to the outside. The external terminal electrodes 210 and 220 are formed on the N-type pad and the P-type pad, respectively, through the wire process in the light emitting device 200 of the present invention described with reference to FIGS. 2 to 4. The external terminal electrodes 210 and 220 refer to the anode electrode 210 and the cathode electrode 220. As a result, a single light emitting device 200 having a plurality of light emitting cells 100 connected in series is manufactured. In addition, it is possible to provide a light emitting device to which a separate control unit is added to operate even during AC driving.

7 is a conceptual diagram illustrating a light emitting device according to a second embodiment of the present invention.

Referring to FIG. 7, the light emitting device 200 according to the present embodiment includes a plurality of light emitting cells 100 connected in series, a rectifying bridge unit connected to a light emitting cell block and applying a predetermined current to the light emitting cells 100. 150 and external terminal electrodes 210 and 220 connected to the rectifying bridge unit 150.

In the present exemplary embodiment, the plurality of light emitting cells 100 connected in series are not connected to an external power source, but are connected to each other through the rectifying bridge unit 150 connected to the first and second external terminal electrodes 210 and 220. It is electrically connected to the power supply. The rectifying bridge unit 150 includes a first diode D1 connected to the first external terminal electrode 210 and an anode terminal of the light emitting cell 100, an anode terminal of the light emitting cell 100, and a second electrode. Of the second diode D2 connected to the external terminal electrode 220, the third diode D3 connected to the cathode of the second external terminal electrode 220 and the light emitting cell 100, and the light emitting cell 100. And a fourth diode D4 connected to the cathode and the first external terminal electrode 210. Therefore, the rectifying bridge unit 150 is applied to the light emitting cells 100 connected in series by the bridge diodes D1 and D3 aligned in the forward direction when the forward voltage is applied during the AC driving, and aligned in the reverse direction when the reverse voltage is applied. Current is applied to the light emitting cells 100 connected in series by the rectified bridge diodes D2 and D4. As a result, the light emitting device 200 continuously emits light regardless of the AC power source.

In addition, an external power source may be simultaneously applied to the light emitting cells connected in series with the rectifying bridge.

8 is a conceptual diagram illustrating a light emitting device according to a third embodiment of the present invention.

Referring to FIG. 8, the light emitting device 200 according to the present embodiment includes a plurality of light emitting cells 100 connected in series and a rectifying bridge unit 150 for applying a predetermined current to the light emitting cell blocks 100 connected in series. And external terminal electrodes 210 to 240 respectively connected to the light emitting cell 100 and the rectifying bridge unit 150.

In the present embodiment, a plurality of light emitting cells 100 connected in series are directly connected to an external power source by the second and fourth external terminal electrodes 220 and 240, and the first and third external terminal electrodes 210 and 230. It is electrically connected with an external power supply by the rectification bridge part 15 connected to (). The power source connected to the light emitting cell 110 and the power source connected to the rectifying bridge unit 150 may be the same power source or may be different power sources.

The rectifying bridge unit 150 includes a first diode D1 connected between the first external terminal electrode 210 and the second external terminal electrode 220, a second external terminal electrode 220, and a third external terminal. The second diode D2 connected between the terminal electrodes 230, the third diode D3 connected between the third external terminal electrode 230 and the fourth external terminal electrode 240, and the fourth external terminal. And a fourth diode D4 connected between the electrode 240 and the first external terminal electrode 210, wherein the second external terminal electrode 220 and the fourth external terminal electrode 240 are light emitting chips, respectively. It is connected to the anode and cathode of 100.

In the present embodiment, AC power is applied through the rectifying bridge unit 150, and the second external terminal electrode 220 and the fourth external terminal electrode 240 are separately provided for use by connecting an RC filter from the outside. DC power is directly applied to the light emitting cell 100. As a result, the total number of input / output electrode terminals of the light emitting device 200 of the present invention is four. At this time, two are for AC drive, and two nami are prepared for connecting RC filters in parallel. The role of the RC filter is to minimize the ripple factor of the current component.

9 is a conceptual diagram illustrating a light emitting device according to a fourth embodiment of the present invention.

9, the light emitting device 200 according to the present embodiment includes a plurality of light emitting cells 100 connected in series, a rectifying bridge unit 150 for applying a predetermined current to the light emitting cells 100, and the rectification. External terminal electrodes 210 and 220 connected to the bridge unit 150, an external connection negative electrode 250 connected to the rectifying bridge unit 150, and a light emitting cell for controlling the resistance of the LED array. DC positive electrode 260 connected to 100 is included.

In this embodiment, an overload may be prevented by connecting a resistor in series between the positive electrode 260 of the plurality of light emitting cells 100 connected in series and the negative electrode 250 for external connection.

The rectifying bridge unit 150 includes a first diode D1 connected between the first external terminal electrode 210 and the negative electrode 250 for external connection, the negative electrode 250 for the external connection and the second external terminal electrode. The second diode D2 connected between the 220, the third diode D3 connected between the second external terminal electrode 220 and the cathode of the light emitting cell 100, and the cathode of the light emitting cell 100. And a fourth diode D4 connected between the first external terminal electrode 210 and the first external terminal electrode 210.

10 is a conceptual diagram illustrating a light emitting device according to a fifth embodiment of the present invention.

Referring to FIG. 10, the light emitting device 200 according to the present embodiment includes a plurality of light emitting cells 100 connected in series, a rectifying bridge unit 150 for applying a predetermined current to the light emitting cells 100, and a rectifying bridge. External terminal electrodes 210 to 240 connected to the unit 150 and the light emitting cell 100, respectively, and an external connection negative electrode 250 connected to the rectifying bridge unit 150.

In the present embodiment, the second and fourth external terminal electrodes 220 and 240 are connected to two external terminals 210 and 230 of the rectifying bridge unit 150 and the plurality of light emitting cells 100 connected in series. RC circuit is connected in parallel to minimize ripple of the AC component, and the negative electrode 250 for external connection has a characteristic of preventing an overload on the light emitting cell 100 by connecting a resistor in series.

The rectifying bridge unit 150 includes a first diode D1 connected between the first external terminal electrode 210 and the negative electrode 250 for external connection, the negative electrode 250 for the external connection and the third external terminal electrode. The second diode D2 connected between the 230, the third diode D3 connected between the third external terminal electrode 230 and the fourth external terminal electrode 240, and the fourth external terminal electrode ( The fourth diode D4 is connected between the 240 and the first external terminal electrode 210, and the fourth external terminal electrode 240 is connected to the cathode of the light emitting chip 100.

In this embodiment, the total number of input and output electrode terminals is five, AC power is applied through the rectifying bridge portion 150, the remaining electrodes are each negative electrode 250 for external connection, two external terminals connected in parallel with the RC circuit It consists of electrodes 220 and 240.

As described above, the light emitting chip 100 of the present invention may be disposed outside the bridge portion 150, or the light emitting chip 100 may be disposed inside the bridge portion 150. In addition, a plurality of light emitting chips 100 may be connected in parallel without using the bridge unit 150.

This will be described in more detail below.

In another embodiment of the present invention, a light emitting cell block including a plurality of light emitting cells connected in series may be connected inside a bridge portion, that is, between opposing contacts (serial contacts) in the bridge portion to increase the degree of integration of the light emitting device, and an AC voltage In order to drive the light emitting cell block to provide a light emitting device having a brightness for illumination. In addition, a light emitting device having a brightness for illumination is provided by connecting at least two light emitting cell blocks in parallel so as to cross light at an alternating voltage and causing the light emitting cell blocks to emit light without using a bridge portion.

First, a light emitting device in which a light emitting cell block in which a plurality of light emitting cells are connected in series in a bridge part is described.

11 is a conceptual diagram for describing a light emitting device according to a sixth embodiment of the present invention.

Referring to FIG. 11, a light emitting cell block 1000 including a plurality of light emitting cells 100 connected in series and a bridge circuit in which the light emitting cell blocks 1000 are connected to a serial contact point are included.

The bridge portion includes four diode blocks 310 to 340, the first and second diode blocks 310 and 320 are connected in series by a first serial node SN1, and the third and fourth diode blocks ( 330 and 340 are serially connected by a second serial node SN2. In addition, the first and second diode blocks 310 and 320 and the third and fourth diode blocks 330 and 340, which are connected in series, respectively, are connected in parallel by the first and second parallel nodes PN1 and PN2. Here, the first and second parallel nodes PN1 and PN2 are connected to predetermined power pads 410 and 420 for connecting with an external AC power source.

In this case, each of the first to fourth diode blocks 310 to 340 includes at least one diode 311. In FIG. 4, two light emitting diodes are configured as one diode block. In addition, each of the first and second diode blocks 310 and 320 allows a predetermined current to flow from the serial node to the parallel node, and each of the third and fourth diode blocks 330 and 340 is predetermined from the parallel node to the serial node. It is preferable to configure the current to flow. Of course, various embodiments are possible without being limited thereto.

The light emitting device according to the embodiment of the present invention having the above-described configuration includes a predetermined power supply unit (not shown) to drive the light emitting device. The driving of the light emitting device will be described with reference to the circuit diagram of FIG. 12. First, when an AC voltage is applied through the external power pads 410 and 420, a predetermined value is applied to the first and second parallel nodes PN1 and PN2 of the bridge unit. AC voltage is applied. If a + voltage is applied to the first parallel node PN1 and a − voltage is applied to the second parallel node PN2, the current is applied to the first parallel node PN1, the third diode block 330, and the light emission. It flows through the cell block 1000, the second diode block 320, and the second parallel node PN2 to emit light from the light emitting cell block 1000. On the other hand, when a negative voltage is applied to the first parallel node PN1 and a positive voltage is applied to the second parallel node PN2, the current is applied to the second parallel node PN2, the fourth diode block 340, and the light emitting cell. The block 1000 flows through the first diode block 310 and the first parallel node PN1 to emit light from the light emitting cell block 1000. Thus, regardless of the voltage state of the external AC power source, the light emitting device of the present embodiment can continuously emit light when the external power source is applied.

Next, a light emitting device manufactured by connecting at least two light emitting cell blocks (a plurality of light emitting cells connected in series) in parallel without using a bridge portion will be described.

12 is a conceptual diagram illustrating a light emitting device according to a seventh embodiment of the present invention.

Referring to FIG. 12, at least two or more light emitting cell blocks 1000a and 1000b including a plurality of light emitting cells 100 connected in series are connected in parallel.

In FIG. 12, the first light emitting cell block 1000a and the second light emitting cell block 1000b are connected in parallel between the tenth and twelfth parallel nodes PN10 and PN20. Each of the tenth and twentieth parallel nodes PN10 and PN20 is connected to the first and second power pads 410 and 420. At this time, the cathode of the first light emitting cell block 1000a is connected to the tenth parallel node PN10, the anode is connected to the twelfth parallel node PN20, and the cathode of the second light emitting cell block 1000b is connected to the 20th parallel node PN10. It is connected to parallel node PN20, and an anode is connected to tenth parallel node PN10. This is only an example, and two or more light emitting cell blocks 1000 may be connected in parallel. In addition, each of the two light emitting cell blocks 1000a and 1000b connected in parallel includes about half the number of light emitting cells 100 of the light emitting cells 100 of the entire light emitting cell blocks 1000 mentioned in FIG. 3. May be That is, if the light emitting cell in the light emitting cell block 1000 included in the light emitting device is 40, the light emitting cell block 1000 may be divided into 20 in the first light emitting cell block 1000a and 20 in the second light emitting cell block 1000b. Of course, the number of light emitting cells 100 in the first and second light emitting cell blocks 1000a and 1000b is not limited thereto. However, the number of light emitting cells 100 in the first and second light emitting cell blocks 1000a and 1000b is preferably the same in order to minimize the change in brightness of the light emitting device.

The light emitting device according to another embodiment of the present invention having the above-described configuration includes a predetermined power supply unit (not shown) to drive the light emitting device.

Referring to the driving of the light emitting device through the circuit diagram of FIG. 12, first, an AC voltage is applied through external power pads 410 and 420. In this case, if a + voltage is applied to the tenth parallel node PN10 and a − voltage is applied to the twentieth parallel node PN20, the second light emitting cell block 1000b emits light. In addition, when a negative voltage is applied to the tenth parallel node PN10 and a positive voltage is applied to the twentieth parallel node PN20, the first light emitting cell block 1000a emits light. That is, even if an external AC power is applied to the light emitting device, the first and second light emitting cell blocks 1000a and 1000b alternately emit light, so that the AC power may be sufficiently used. In addition, since the power used in the home is 60 Hz, there is no problem even if the two light emitting cell blocks 1000a and 1000b alternately emit light.

As a result, it can be driven in an alternating current without a separate rectifying circuit, and the process can be simplified because only a single cell is used. In addition, it is possible to manufacture a lighting device using a light emitting device coupled to a plurality of light emitting cells at the wafer level. That is, the light emitting element of the present invention can be used in a conventional light emitting device. For example, the light emitting device can be formed by connecting a power supply unit for applying a predetermined voltage to the power pad of the light emitting device of the present invention. As the power supply unit, a device that applies 1V to 500V may be used, and a device that generates a voltage used in a light emitting device such as a voltage used in a home and a flashlight may be used. In addition, a predetermined voltage divider for voltage drop may be further included between the power pad and the power supply unit. As such, the light emitting device of the present invention can replace a lighting device such as a conventional light bulb.

The light emitting devices according to the first to seventh embodiments described above may be arrayed in various shapes. That is, the light emitting device includes a light emitting cell block in which a plurality of light emitting cells are arranged in a matrix, and first to fourth diode blocks for bridges respectively formed on both sides of the light emitting cell block. Specifically, the first and third diode blocks are formed on one side (left side) of the light emitting cell block, and the second and fourth diode blocks are formed on the other side (right side) of the light emitting cell block. In this case, in the case of the parallel connection as in the seventh embodiment, the first and second light emitting cell blocks are connected to the power pads (ie, parallel nodes) in parallel and include a plurality of light emitting cells, respectively. A plurality of light emitting cells in the second light emitting cell block are arranged in a matrix, and are connected in series to each light emitting cell block. Of course, not limited to this, various arrangements are possible for the convenience of electrical connection. In this case, the first to fourth diodes and the light emitting cell blocks may have a connection portion, such as a separate pad for connection as shown in FIGS. 7 to 10.

Next, a light emitting device using such a light emitting element will be described.

13 is a conceptual diagram illustrating a light emitting device according to the present invention.

A light emitting device including a power supply unit of the present invention, a light emitting cell block in which a plurality of light emitting cells are connected in series, and a control unit for adjusting a waveform of voltage and current applied to the light emitting device.

In FIG. 13, AC power is applied to the power supply unit 510, and the parallel RC circuit and the series resistor that are configured in the controller 520 are connected to the light emitting device 200.

The controller 520 includes a capacitor C1 and a first resistor R1 connected to the light emitting cell 100 in the light emitting device 200 in parallel. The light emitting cell 100 may further include a second resistor R2 connected in series.

This structure will be described in detail with reference to FIG. 13.

The rectifying bridge part 150 of the light emitting device 200 is connected to the AC power supply through the first and second external terminal terminals. The second resistor R2 and the light emitting cell 100 are connected in series between two nodes of the rectifying bridge portion 150 to which the first and second external terminal terminals are not connected. In addition, the first capacitor C1 and the first resistor R1 are connected in parallel to two nodes of the rectifying bridge unit 150 to which the first and second external terminals are not connected. That is, the second resistor R2 and the light emitting cell 100 connected in series are connected in parallel with the first capacitor C1 and the first resistor R1, respectively.

Therefore, when AC power is applied to the light emitting device, a current divided by positive and negative is applied in both directions of the light emitting cell 100 through the rectifying bridge part 150 in the light emitting device 200, thereby sequentially emitting light. do. In addition, the waveform of the current is adjusted by the capacitors C1 and resistors R1 and R2 connected in parallel, respectively.

1, 200: light emitting element 10: mother substrate
20: light emitting semiconductor layer 30, 50, 60: electrode
40: host substrate 70: wiring
100 light emitting cell 150 rectifying bridge portion
210 to 260: external terminal electrode
310 to 340: diode block
410, 420: power pad 510: power supply
520: control unit

Claims (17)

Board; And
It includes; a plurality of light emitting cells formed on the substrate,
The plurality of light emitting cells,
A bridge light emitting unit including four light emitting cell blocks including at least one light emitting cell; And
And a light emitting cell array unit formed inside the bridge light emitting unit and including at least one light emitting cell. The method of claim 1,
A first electrode of the light emitting cell at one end of the light emitting cell array unit is connected to a first light emitting cell block among the four light emitting cell blocks in the bridge light emitting unit and a second electrode of the light emitting cell in the second light emitting cell block;
And a second electrode of the light emitting cell at the other end of the light emitting cell array unit is connected to a third light emitting cell block among the four light emitting cell blocks in the bridge light emitting unit and a first electrode of the light emitting cell in the fourth light emitting cell block. device. The method of claim 2,
A first electrode of a light emitting cell at one end of the light emitting cell array unit being connected to a first light emitting cell block among four light emitting cell blocks in the bridge light emitting unit and a second electrode of a light emitting cell in a second light emitting cell block; ,
A second electrode of a light emitting cell at the other end of the light emitting cell array unit is connected to a third light emitting cell block among the four light emitting cell blocks in the bridge light emitting unit and a second electrode of the light emitting cell in the fourth light emitting cell block; A light emitting device, characterized in that disposed on the substrate facing each other. The method of claim 2,
A third contact point between the first light emitting cell block and the third light emitting cell block;
A fourth contact point is provided between the second light emitting cell block and the fourth light emitting cell block,
And the third and fourth contacts are disposed to face each other on a substrate. The method of claim 4, wherein
And at least two power pads for connecting to an external AC power source. The method of claim 5, wherein
And the third and fourth contacts are connected to the at least two power pads. The method of claim 1,
The light emitting cell array unit is characterized in that the plurality of light emitting cells are connected in series. Board; And
It includes; a plurality of light emitting cells formed on the substrate,
The plurality of light emitting cells,
A bridge light emitting part disposed at an outermost part of the substrate; And
And a light emitting cell array unit formed inside the bridge light emitting unit and including at least one light emitting cell. The method of claim 8,
The bridge light emitting unit includes a first light emitting cell block, a second light emitting cell block, a third light emitting cell block and a fourth light emitting cell block. The method of claim 9,
A first electrode of the light emitting cell at one end of the light emitting cell array unit is connected to a first light emitting cell block among the four light emitting cell blocks in the bridge light emitting unit and a second electrode of the light emitting cell in the second light emitting cell block;
And a second electrode of the light emitting cell at the other end of the light emitting cell array unit is connected to a third light emitting cell block among the four light emitting cell blocks in the bridge light emitting unit and a first electrode of the light emitting cell in the fourth light emitting cell block. device. The method of claim 10,
A first electrode of a light emitting cell at one end of the light emitting cell array unit being connected to a first light emitting cell block among four light emitting cell blocks in the bridge light emitting unit and a second electrode of a light emitting cell in a second light emitting cell block; ,
A second electrode of a light emitting cell at the other end of the light emitting cell array unit is connected to a third light emitting cell block among the four light emitting cell blocks in the bridge light emitting unit and a second electrode of the light emitting cell in the fourth light emitting cell block; A light emitting device, characterized in that disposed on the substrate facing each other. The method of claim 10,
A third contact point between the first light emitting cell block and the third light emitting cell block;
A fourth contact point is provided between the second light emitting cell block and the fourth light emitting cell block,
And the third and fourth contacts are disposed to face each other on a substrate. The method of claim 12,
And at least two power pads for connecting to an external AC power source. The method of claim 13,
And the third and fourth contacts are connected to the at least two power pads. The method of claim 9,
Wherein the first light emitting cell block, the second light emitting cell block, the third light emitting cell block, and the fourth light emitting cell block are arranged in pairs to face each other on a substrate. The method of claim 15,
The first light emitting cell block and the third light emitting cell block are disposed on the same side of the substrate,
And the second light emitting cell block and the fourth light emitting cell block are disposed on the same side of the substrate. The method of claim 8,
The light emitting cell array unit is characterized in that the plurality of light emitting cells are connected in series.

Images