KR20100043401A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
KR20100043401A
KR20100043401A KR1020080102426A KR20080102426A KR20100043401A KR 20100043401 A KR20100043401 A KR 20100043401A KR 1020080102426 A KR1020080102426 A KR 1020080102426A KR 20080102426 A KR20080102426 A KR 20080102426A KR 20100043401 A KR20100043401 A KR 20100043401A
Authority
KR
South Korea
Prior art keywords
electrode
lead frame
housing
emitting diode
led chip
Prior art date
Application number
KR1020080102426A
Other languages
Korean (ko)
Inventor
박종원
인치억
Original Assignee
알티반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알티반도체 주식회사 filed Critical 알티반도체 주식회사
Priority to KR1020080102426A priority Critical patent/KR20100043401A/en
Publication of KR20100043401A publication Critical patent/KR20100043401A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Abstract

PURPOSE: A light emitting diode package is provided to extend a lifespan of a light-emitting diode package by blocking the inflow of a foreign material and delaying the deterioration of the lead frame. CONSTITUTION: A light-emitting diode package(100) comprises a lead frame(110) and a housing(120). The lead frame mounts the LED chip(130). The housing has an opening exposing the LED chip while surrounding the lead frame. The lead frame forms an interface with the housing and has a permeation preventing unit extending a permeation path of external impurity.

Description

Light Emitting Diode Package {LIGHT EMITTING DIODE PACKAGE}

The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package that blocks the penetration of impurities that degrade the lead frame.

In general, a light emitting diode (LED) refers to a semiconductor device that emits light by recombination of minority carriers (electrons or holes) injected into a p-n semiconductor junction structure. The light emitting diode may be manufactured as a package such as a top view or a side view, and used as a light source.

1 is a cross-sectional view of a conventional general light emitting diode package. Referring to FIG. 1, the conventional LED package 10 includes a lead frame 11 and a housing 16. The lead frame 11 is composed of a first electrode 12 and a second electrode 13. The LED chip 14 may be mounted on the first electrode 12. The LED chip 14 may be connected to the first electrode 12 and the second electrode 13 by a bonding wire 15. The housing 16 forms the outline of the LED package 10 and supports and surrounds the lead frame 11.

In the LED package 10 having the above structure, when power is supplied to the LED chip 14 through the lead frame 11, light is generated from the LED chip 14 and the generated light is directly or the lead frame 11. And reflected on the inner surface of the upper housing 18 is irradiated to the outside. Heat generated in the LED chip 14 is discharged through the other side portion of the first electrode 12 and the second electrode 11 exposed by extending to the side of the housing 17.

However, in the conventional light emitting diode package 10 having the above structure, impurities such as moisture or gas, which are present on the outside of the light emitting diode package 10, pass through the interface 20 between the lead frame 11 and the upper housing 18. It can penetrate around the LED chip 14. When an external impurity penetrates around the LED chip 14, the impregnated impurities react with the lead frame 11 made of heat and metal generated when the LED chip 14 operates to deteriorate the lead frame 11. Can be.

In particular, when the lead frame 11 contains a silver (Ag) component and the filler 19 contains a sulfide-based phosphor, impurities impregnated around the LED chip 14 are silver (Ag) of the lead frame 11. The lead frame 11 is blackened by promoting the reaction between the component and the sulfur (S) component contained in the sulfide-based phosphor. FIG. 2A shows the lead frame 11 before discoloration, and FIG. 2B shows the lead frame 11 discolored due to impurity impregnated therein.

 When the lead frame 11 is discolored black, the reflectance of the light generated by the LED chip 14 is lowered, thereby reducing the amount of light emitted by the LED package 10, thereby reducing the lifespan of the LED package 10. There is a problem that is shortened.

The present invention has been made to solve the above problems, and an object of the present invention is to provide an improved light emitting diode package that can block the penetration of impurities such as moisture or gas from the outside around the LED chip.

The LED package according to the present invention includes a lead frame on which the LED chip is mounted; And a housing having an opening through which the LED chip is exposed and formed to surround the lead frame, wherein the housing extends a penetration path of external impurities on an upper surface of a lead frame portion that forms an interface with the housing of the lead frame. Penetration inhibitors can be formed.

Here, the penetration suppression unit includes at least one groove surrounding the LED chip.

In addition, the groove may have a cross-sectional shape of any one of a semi-circular shape, an elliptic shape and a polygonal shape.

The lead frame may include a chip mounting part mounted on the LED chip and positioned on the lower surface of the housing and an electrode part connected to the LED chip by a bonding wire, wherein the lead frame includes the chip mounting part higher than the electrode part. May be in the form of a low downset.

The lead frame may include a first electrode on which the LED chip is mounted and a second electrode spaced apart from the first electrode, and the housing is located in a space between the first electrode and the second electrode. And an insulating layer which insulates the first electrode and the second electrode, wherein the insulating layer has a protrusion forming an interface with an upper surface of the first electrode and the second electrode, and a first electrode and an interface forming the interface with the protrusion. The penetration inhibiting part may be formed on an upper surface of at least one of two electrodes.

In addition, the first electrode and the second electrode may be positioned on the lower surface of the housing and exposed to the outside, and at least one corner of the lower corners of the first electrode and the second electrode may be chamfered to have an inclined surface.

According to the LED package according to the present invention, the impurity is infiltrated around the LED chip by forming a penetration suppression portion to extend the penetration path of impurities introduced from the outside in the lead frame portion where the housing and the lead frame overlap to form an interface. Can be blocked. Accordingly, the degradation of the lead frame caused by the reaction of impurities, heat, and the lead frame may be delayed to increase the lifespan of the LED package.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the LED package of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

3 is a perspective view of a light emitting diode package according to a first embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along the line II ′ of the light emitting diode package of FIG. 3. 3 and 4, the LED package 100 according to the first embodiment of the present invention includes a lead frame 110 and a housing 120.

The lead frame 110 includes a first electrode 112 and a second electrode 114 spaced apart from each other. The LED chip 130 may be mounted on the first electrode 112. The LED chip 130 may be connected to the first electrode 120 and the second electrode 114 by a bonding wire 132. The lead frame 110 has a penetration suppression unit 150. The penetration suppression part 150 is a part which makes the interface area of the lead frame 110 and the housing 120 larger than before.

The housing 120 forms an outer shape of the LED package 100 and supports and surrounds the first electrode 112 and the second electrode 114 which are spaced apart from each other. The housing 120 may be divided into a lower housing 124 and an upper housing 122 based on the lead frame 120. The lower housing 124 supports the lead frame 110, and the upper housing 122 has an opening 140 exposing one side of the first electrode 112 and the second electrode 114. The opening 140 provides a path of light emitted from the LED chip 130. The filling part 142 may be filled in the opening 140 to protect the LED chip 130 mounted on the lead frame 110. The filler 142 may contain a phosphor that converts a wavelength of light generated from the LED chip 130. The other side portions of the first electrode 112 and the second electrode 114 extend to the side of the housing 120 and are exposed to the outside, and the side of the lower housing 120 to be surface mounted on a printed circuit board (not shown). And bent along the lower surface.

Hereinafter, the penetration suppression unit 150 will be described in more detail. The penetration suppression part 150 is formed in a part of the lead frame 110 that forms an interface with the housing 120 of the lead frame 110. A part of the lead frame 110 that interfaces with the housing 120 of the lead frame 110 may be an upper surface of the lead frame 110 that interfaces with the upper housing 122.

The penetration suppressing part 150 may be a groove formed on the upper surface of the lead frame 110 in the shape of a triangle. When the injection molding is formed to surround the lead frame 110, the injection molding is filled in the groove, thereby forming a housing 120 having a protrusion corresponding to the groove. The light emitting diode package according to the embodiment of the present invention has a larger interface area than an interface area formed between a lead frame and a housing having a flat top surface due to a groove having a triangular cross section.

When the interface area between the lead frame 110 and the upper housing 122 is enlarged, the path 152 through which external impurities penetrate into the lead frame portion around the LED chip 130 may be longer than that of the conventional LED package. Therefore, even if the lead frame 110 contains silver (Ag) and the filler 19 contains sulfide-based phosphors, impurity penetration that promotes their reactions is suppressed, so that the lead frame in which the lead frame turns black in the past is deteriorated. The phenomenon may be delayed. In addition, as the interface area between the lead frame 210 and the upper housing 222 is widened, the lead frame 210 and the housing 220 may be more firmly coupled.

In the present embodiment, the penetration suppression unit 150 has been described with an example in which the cross section is a triangular groove, but is not limited thereto. For example, the groove may have various shapes such that the cross section has a semicircular shape, an elliptic shape, a polygonal shape other than a triangle, and the like, to widen the interface area between the lead frame 110 and the upper housing 122. In addition, in the present exemplary embodiment, the penetration suppression unit 150 has been described as an example in which one groove is formed. However, the penetration suppressing unit 150 may be configured as a plurality of grooves according to the shape of the lead frame and the shape of the housing forming an interface with the lead frame.

5 is a perspective view of a light emitting diode package according to a second embodiment of the present invention, FIG. 6 is a plan view of the light emitting diode package of FIG. 3, and FIG. 7 is cut along the line II-II ′ of the light emitting diode package of FIG. 6. One cross section. 5 to 7, the LED package 200 according to the second embodiment of the present invention includes a lead frame 210 and a housing 220.

The lead frame 210 includes a chip mounting unit 211 and an electrode unit 212. The chip mounting unit 211 mounts the LED chip 230 and is disposed on the lower surface of the housing 220 to radiate heat generated from the LED chip 130 to the outside. The penetration suppressing portion 213 is formed on an upper surface portion of the chip mounting portion 211 forming an interface with the housing 220. The electrode unit 212 is electrically connected to the bonding wire 231 connected to the LED chip 230 and the surface of an external printed circuit board (not shown). In the lead frame 210, the chip mounting unit 211 and the electrode unit 212 may be spaced apart from each other, and the chip mounting unit 211 may have a downset shape having a height lower than that of the electrode unit 212. .

The housing 120 forms an external shape of the LED package 200, and insulates the chip mounting unit 211 and the electrode unit 212 from each other, and is coupled to the chip mounting unit 211 and the electrode unit 212. The housing 220 has an opening 221 exposing the chip mounting portion 211. The opening 221 may be filled with a filler (not shown) to protect the LED chip 230 from the outside. The filler may contain phosphors in order to convert the color of light emitted from the LED chip 230 and to emit the light to the outside.

One end of the electrode unit 212 is coupled to the side of the housing 220. The electrode part 212 extends from one end and is exposed to the outside, and is bent along the side and bottom surfaces of the housing 220 so that the other end may be surface mounted on a printed circuit board (not shown).

The penetration suppressing unit 213 may be a groove formed in a triangular cross section on an upper surface of the chip mounting unit 211. The groove is formed on the upper surface of the chip mounting portion 211 covered with the housing 220 along the bottom boundary of the opening 212 when the LED package 200 is viewed in plan view, and is exposed through the opening 212. ) Can surround the surrounding part.

The light emitting diode package according to the embodiment of the present invention has a larger interface area than the interface area formed between the chip mounting portion 211 and the housing having a flat top surface due to the groove having a triangular cross section. When the interface area between the chip mounting unit 211 and the housing 220 increases, the path 222 through which external impurities penetrate into the lead frame portion around the LED chip 230 becomes longer than that of the conventional LED package. Penetration of can be suppressed.

Other details of the penetration suppression unit 213 can be easily implemented by those skilled in the art from the description of the first embodiment of the present invention, and thus detailed description thereof will be omitted.

8 is a perspective view of a light emitting diode package according to a third embodiment of the present invention, FIG. 9 is a plan view of the light emitting diode package of FIG. 8, and FIG. 10 is a cutout view of the light emitting diode package of FIG. 8 along line III-III ′. One cross section. 8 to 10, the LED package 300 according to the third embodiment of the present invention includes a lead frame 310 and a housing 320.

The lead frame 310 includes a first electrode 311 on which the LED chip 330 is mounted and a second electrode 312 insulated from the first electrode 311 by the insulating layer 321. The LED chip 330 may be electrically connected to the first electrode 311 and the second electrode 312 by a bonding wire 331. The first electrode 311 and the second electrode 312 are positioned on the same plane of the lower surface of the housing 320 and exposed to the outside of the lower surface of the housing 320 to perform an external electrode and a heat sink function. Portions of the first electrode 311 and the second electrode 312 which contact the lower portion of the insulating layer 321 form an inclined surface through the chamfer.

The housing 320 forms an outer shape of the LED package 300 and surrounds the first electrode 311 and the second electrode 312 which are spaced apart from each other. The housing 320 further includes an insulating layer 321 positioned in a space between the first electrode 211 and the second electrode 212 to insulate the first electrode 311 and the second electrode 312. can do. The first electrode 311 and the second electrode 312 may have penetration inhibitors 313 and 313 ′.

The upper part of the insulating layer 321 is higher than the first electrode 311 and the second electrode 312, and covers the upper end surfaces of the first electrode 311 and the second electrode 312 facing the first electrode 311. ) And a protrusion 322 forming an interface with an upper surface of the second electrode 312. The protrusion 322 has a horizontal width that is greater than the horizontal width between the first electrode 311 and the second electrode 312 to cover the opposite ends of the first electrode 311 and the second electrode 312. Can be.

Hereinafter, the penetration inhibiting portions 313 and 313 'will be described in more detail. The penetration suppressing portions 313 and 313 ′ are formed in portions of the lead frame 310 that form an interface with the housing 320. A portion of the lead frame 310 that interfaces with the housing 320 of the lead frame 310 may include a first electrode that interfaces with an upper surface of the first electrode 311 that interfaces with the housing 320 and the protrusion 322. 311).

The penetration suppressing portions 313 and 313 'may be grooves formed in a triangular cross section on an upper surface of the first electrode 311. When the injection is filled between the first electrode 311 and the second electrode 312 and the insulating layer 321 is formed, the insulating layer 321 is inclined surfaces of the lower portion of the first electrode 311 and the second electrode 312. It will have an inclined surface corresponding to. In addition, when the injection molding is formed to surround the lead frame 310, the injection molding is filled in the groove, thereby forming a housing 320 having protrusions corresponding to the groove.

The groove having a triangular cross section has a larger interface area than the interface area formed between the first electrode and the housing having a flat top surface. When the interface area between the first electrode 310 and the housing 122 is increased, the paths 315 and 315 'through which external impurities penetrate into the lead frame portion around the LED chip 330 may be longer than those of the conventional LED package. .

In addition, the inclined surface formed on the insulating layer 321 has a structure for supporting the first electrode 311 and the second electrode 312 while widening the bonding area between the first electrode 311 and the second electrode 312. The first electrode 311 and the second electrode 312 may be prevented from being separated from the housing 320.

A part of the lead frame 310, which interfaces with the housing 320, of the lead frame 310 may have a second electrode that interfaces with the upper surface of the second electrode 312 that interfaces with the housing 320 and the protrusion 322. 311).

The light emitting diode package according to the exemplary embodiment of the present invention has been described with reference to a case in which inclined surfaces are formed at portions of the first electrode 311 and the second electrode 312 that are in contact with the insulating layer 321, but the present invention is not limited thereto. No, the inclined surface may be formed at at least one corner of the lower surface corners of the first electrode 311 and the second electrode 312.

Other descriptions such as the opening 323, the penetration suppressing portion 213, and the like can be easily implemented by those skilled in the art from the description of the first and second embodiments of the present invention, and thus detailed description thereof will be omitted.

1 is a cross-sectional view of a conventional general light emitting diode package.

2 is a photograph showing before and after discoloration of the lead frame of FIG. 1.

3 is a perspective view of a light emitting diode package according to a first embodiment of the present invention.

4 is a cross-sectional view of the light emitting diode package of FIG. 3 taken along the line II ′.

5 is a perspective view of a light emitting diode package according to a second embodiment of the present invention.

6 is a plan view of the LED package of FIG. 3.

FIG. 7 is a cross-sectional view of the LED package of FIG. 6 taken along line II-II '. FIG.

8 is a perspective view of a light emitting diode package according to a third embodiment of the present invention.

9 is a plan view of the LED package of FIG. 8.

FIG. 10 is a cross-sectional view of the light emitting diode package of FIG. 8 taken along line III-III '. FIG.

Claims (6)

A lead frame on which an LED chip is mounted; And And a housing having an opening through which the LED chip is exposed and formed to surround the lead frame. A light emitting diode package having a penetration suppression portion formed to extend a penetration path of an external impurity in a portion of the lead frame that forms an interface with the housing. The method of claim 1, wherein the penetration suppression unit, The LED package including at least one groove surrounding the LED chip. The method of claim 2, wherein the groove, A light emitting diode package having a cross-section having any one of a semicircle shape, an elliptic shape, and a polygonal shape. The lead frame of claim 3, wherein the lead frame includes a chip mounting part mounted on the lower surface of the housing and an electrode part connected to the LED chip by a bonding wire. The lead frame has a light emitting diode package having a downset shape in which the chip mounting portion is lower than the electrode portion. The method of claim 3, The lead frame may include a first electrode on which the LED chip is mounted and a second electrode spaced apart from the first electrode, and the housing may be positioned in a spaced space between the first electrode and the second electrode. An insulating layer insulating the first electrode and the second electrode, The insulating layer has a protrusion that forms an interface with an upper surface of the first electrode and the second electrode, and the penetration suppression portion is formed on an upper surface of at least one of the first electrode and the second electrode which interface with the protrusion. package. The method of claim 5, The first electrode and the second electrode is positioned on the lower surface of the housing and exposed to the outside, at least one corner of the lower corners of the first electrode and the second electrode is chamfered to have a sloped surface.
KR1020080102426A 2008-10-20 2008-10-20 Light emitting diode package KR20100043401A (en)

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Application Number Priority Date Filing Date Title
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034142B1 (en) * 2009-12-01 2011-05-13 엘지이노텍 주식회사 Light emitting device and method for fabricating thereof
KR101110911B1 (en) * 2010-12-24 2012-02-24 엘지이노텍 주식회사 Light-emitting element package
KR101318145B1 (en) * 2012-03-29 2013-10-15 크루셜텍 (주) LED Package
US8772816B2 (en) 2009-12-01 2014-07-08 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
KR20180050632A (en) * 2016-05-18 2018-05-15 라이트온 옵토 테크놀로지 （창조우） 컴퍼니 리미티드 Method forming for digital numerical display
KR20190024930A (en) * 2019-02-22 2019-03-08 엘지이노텍 주식회사 Light emitting device and lighting system having the same

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831409B2 (en) 2009-12-01 2017-11-28 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9461223B2 (en) 2009-12-01 2016-10-04 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US10749092B2 (en) 2009-12-01 2020-08-18 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US8772816B2 (en) 2009-12-01 2014-07-08 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
KR101034142B1 (en) * 2009-12-01 2011-05-13 엘지이노텍 주식회사 Light emitting device and method for fabricating thereof
US9136453B2 (en) 2009-12-01 2015-09-15 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US10446730B2 (en) 2009-12-01 2019-10-15 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9711702B2 (en) 2009-12-01 2017-07-18 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9035348B2 (en) 2009-12-01 2015-05-19 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US10388840B1 (en) 2009-12-01 2019-08-20 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9978921B2 (en) 2009-12-01 2018-05-22 LG Innotek, Co. Ltd. Light emitting device and method of manufacturing the same
US10230036B2 (en) 2009-12-01 2019-03-12 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
KR101110911B1 (en) * 2010-12-24 2012-02-24 엘지이노텍 주식회사 Light-emitting element package
KR101318145B1 (en) * 2012-03-29 2013-10-15 크루셜텍 (주) LED Package
KR20180050632A (en) * 2016-05-18 2018-05-15 라이트온 옵토 테크놀로지 （창조우） 컴퍼니 리미티드 Method forming for digital numerical display
KR20190024930A (en) * 2019-02-22 2019-03-08 엘지이노텍 주식회사 Light emitting device and lighting system having the same

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