KR20090040760A - Diffusion flange - Google Patents
Diffusion flange Download PDFInfo
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- KR20090040760A KR20090040760A KR1020070106255A KR20070106255A KR20090040760A KR 20090040760 A KR20090040760 A KR 20090040760A KR 1020070106255 A KR1020070106255 A KR 1020070106255A KR 20070106255 A KR20070106255 A KR 20070106255A KR 20090040760 A KR20090040760 A KR 20090040760A
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- dust
- diffusion
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- collecting
- diffusion flange
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 50
- 239000000428 dust Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000001808 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 239000005341 toughened glass Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D51/00—Auxiliary pretreatment of gases or vapours to be cleaned
- B01D51/02—Amassing the particles, e.g. by flocculation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/0081—Use of vibrations, e.g. ultrasound
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Abstract
Description
본 발명은 반도체 제조용 설비에서 장치와 진공펌프의 사이에 결합되어 주입된 가스나 공정중 발생된 먼지 등을 흡입하는 디퓨젼 플랜지에 관한 것으로, 더욱 상세하게는 흡입되는 먼지들에 음전극을 부여하여 하층의 양전극을 띠는 집진판으로 흡입된 먼지 등을 집진시키고, 초음파진동자를 이용하여 집진된 먼지 등을 털어내어 포집공간에 쌓은 후, 배출시키는 파우더 포집용 300mm 디퓨젼 플랜지에 관한 것이다.The present invention relates to a diffusion flange that sucks injected gas or dust generated during a process, which is coupled between a device and a vacuum pump in a semiconductor manufacturing facility, and more particularly, by applying a negative electrode to the suctioned dust. The present invention relates to a 300 mm diffusion flange for collecting powder, which collects dust, etc., collected by a positive electrode having a positive electrode, and shakes off dust collected by using an ultrasonic vibrator, and accumulates it in a collecting space.
일반적으로 반도체 소자는 반도체 기판인 웨이퍼상에 사진, 식각, 확산, 이온주입, 금속증착 등의 공정을 선택적이고도 반복적으로 수행함으로써 만들어진다. 이러한 여러 공정중 빈번히 수행되는 공정의 하나로 웨이퍼상에 P형 또는 N형 불순물을 침투시키거나 산화막 또는 질화막 등의 특정막을 형성 또는 성장시키는 확산공정이 있다.In general, a semiconductor device is made by selectively and repeatedly performing a process such as photographing, etching, diffusion, ion implantation, and metal deposition on a semiconductor substrate wafer. One of the processes frequently performed among these processes is a diffusion process that infiltrates P-type or N-type impurities on a wafer or forms or grows a specific film such as an oxide film or a nitride film.
이러한 확산공정에서는 주로 화학기상증착(Chemical Vapor Deposition, CVD)법이 이용된다. 상기 CVD방법은 화학소스를 가스 상태로 장치내에 공급하여 웨이퍼 표면상에서 확산을 일으키게 함으로써 웨이퍼상에 유전체막, 도전막, 반도전막 등을 증착시키는 기술이다.In this diffusion process, chemical vapor deposition (CVD) is mainly used. The CVD method is a technique of depositing a dielectric film, a conductive film, a semiconducting film, etc. on a wafer by supplying a chemical source into the device in a gas state to cause diffusion on the wafer surface.
이러한 CVD방법은 통상 장치내의 압력에 따라 저압CVD, 상압CVD로 구분되고, 그 외에도 플라즈마CVD 또는 광여기CVD 등이 일반적으로 사용되고 있다. 이 중에서 LP(Low Pressure)CVD는 상압보다 낮은 압력에서 웨이퍼의 표면상에 필요한 물질을 증착시키는 방법으로서 주로 사용된다.Such a CVD method is generally classified into low pressure CVD and atmospheric pressure CVD according to the pressure in the apparatus. In addition, plasma CVD or photoexcited CVD is generally used. Among them, LP (Low Pressure) CVD is mainly used as a method of depositing a necessary material on the surface of the wafer at a pressure lower than normal pressure.
이러한 LPCVD방법을 이용한 확산공정은 주로 우수한 균일성과 반복성 및 낮은 결함률 등의 장점을 갖는 종형확산로(Vertical Diffusion Furnace)에서 그 진행이 이루어진다.The diffusion process using the LPCVD method mainly proceeds in a vertical diffusion furnace having excellent uniformity, repeatability, and low defect rate.
이처럼 종형확산로와 같은 진공챔버에는 주입된 가스를 배출시키기 위해 진공펌프의 사이에 디퓨젼 플랜지가 배치된다.In such a vacuum chamber such as a vertical diffusion furnace, a diffusion flange is disposed between the vacuum pumps to discharge the injected gas.
디퓨젼 플랜지는 상부의 진공챔버와 연결되도록 상부체결부가 형성되고, 하부의 진공펌프와 연결되도록 하부체결부가 형성되어, 사용되고 난 가스난 발생된 먼지 등을 진공에 의해 빨아내게 된다.The diffusion flange has an upper fastening portion formed to be connected to the upper vacuum chamber, and a lower fastening portion formed to be connected to the lower vacuum pump to suck out the used gas and generated dust by vacuum.
본 발명은 상기와 같은 플랜지의 내부에 방전판과 초음파 진동자를 구비하여 더욱 효율적으로 파우더(먼지, 가스 등)를 포집할 수 있는 300mm 디퓨젼 플랜지를 제공하는데 있다.The present invention is to provide a 300mm diffusion flange capable of collecting powder (dust, gas, etc.) more efficiently by having a discharge plate and an ultrasonic vibrator inside the flange as described above.
상기와 같은 과제를 해결하기 위해 본 발명은,The present invention to solve the above problems,
진공챔버와 진공펌프의 사이에 결합되는 디퓨젼 플랜지에 있어서,In the diffusion flange coupled between the vacuum chamber and the vacuum pump,
디퓨젼 플랜지의 입구측 내부에는 음극전압이 접점되는 망 형태의 방전판이 장착되고, 방전판의 하측에는 양극전압이 접점되면서 하향경사진 집진판이 장착되고, 디퓨젼 플랜지의 바닥면에는 출구를 가로막으면서 상향 경사져 포집공간을 형성시키는 포집막이 장착되며, 방전판과 집진판의 일단에는 초음파진동자가 부착됨을 특징으로 하는 파우더 포집용 디퓨젼 플랜지를 제공한다.Inside the inlet side of the diffusion flange, a discharge plate in the form of a net is connected to the cathode voltage. On the lower side of the discharge flange, a dust collector plate is inclined downward while the anode voltage is contacted. It is equipped with a collecting film for tilting upward to form a collecting space, and provides a diffusion flange for collecting powder, characterized in that an ultrasonic vibrator is attached to one end of the discharge plate and the collecting plate.
이때, 포집공간의 외측벽에는 내부를 확인할 수 있는 투시창이 형성됨이 바람직하다.At this time, it is preferable that a viewing window for identifying the inside is formed on the outer wall of the collecting space.
그리고 포집막은 서로 다른 기울기를 갖도록 3단으로 되며, 최상층의 제3단이 제일 높은 기울기를 가지며, 제2단이 제일 낮은 기울기를 갖는 것이 바람직하다.In addition, the collecting film has three stages to have different inclinations, and it is preferable that the third stage of the uppermost layer has the highest slope and the second stage has the lowest slope.
전술한 바와 같이 본 발명에 따른 파우더 포집용 300mm 디퓨젼 플랜지는 방 전판과 집진판을 이용해 먼지를 한곳에 모은 후, 초음파진동자에 의해 모두 떨어뜨려 모으는 것으로, 먼지를 효율적으로 포집하여 빠른 시간안에 재설치 할 수 있어 생산장비의 운전을 멈췄을때 발생하는 많은 비용손실을 줄일 수 있는 잇점이 있다.As described above, the 300 mm diffusion flange for collecting powder according to the present invention collects dust in one place using a discharge plate and a dust collecting plate, and then collects all of them by an ultrasonic vibrator, so that the dust can be efficiently collected and reinstalled in a short time. There is an advantage in that a lot of the cost loss that occurs when the production equipment stops operating.
이하, 첨부된 도면들을 참조하여 본 발명의 바람직한 실시예에 따른 파우더 포집용 300mm 디퓨젼 플랜지를 설명한다.Hereinafter, a 300 mm diffusion flange for collecting powders according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.
도 1은 본 발명에 따른 파우더 포집용 디퓨젼 플랜지를 나타낸 단면도이다.1 is a cross-sectional view showing a diffusion flange for collecting powders according to the present invention.
도 1을 참고하면, 본 발명에 따른 디퓨젼 플랜지(100)는 원통형상을 갖는 것으로, 그 상부측에는 입구(111)가 형성되어 반도체 제조용 진공챔버와 연결되는 상부체결부(110)가 결합되고, 그 하부측에는 출구(121)가 형성되어 진공펌프와 연결되는 하부체결부(120)가 형성된다. 바람직하게는 본 발명에 따른 디퓨젼 플랜지(100)는 300mm 디퓨젼 플랜지이다.Referring to FIG. 1, the diffusion flange 100 according to the present invention has a cylindrical shape, and an upper end portion 110 connected to a vacuum chamber for manufacturing a semiconductor is formed at an inlet 111 thereof. An outlet 121 is formed at the lower side thereof, and a lower fastening part 120 is formed to be connected to the vacuum pump. Preferably, the diffusion flange 100 according to the invention is a 300 mm diffusion flange.
이러한 디퓨젼 플랜지(100)에는 방전판(130), 집진판(140), 포집막(160) 및 초음파진동자(150)를 더 포함한다.The diffusion flange 100 further includes a discharge plate 130, a dust collecting plate 140, a collecting film 160, and an ultrasonic vibrator 150.
먼저, 방전판(130)은 디퓨젼 플랜지(100)의 내부에서 상부측에 횡방향으로 장착되는 것으로, 망 형태로 형성되어 디퓨젼 플랜지(100)의 상부측 입구(111)에 인접하게 장착된다. 따라서 디퓨젼 플랜지(100)의 입구(111)를 통해 유입된 가스나 먼지 등이 이 방전판(130)을 관통하여 하강하도록 된다. 이러한 방전판(130)은 외부의 DC 전압중에서 음(-)극이 접점되는 것으로, 방전판(130)이 음극을 띠므로 이 방전판(130)을 통과하는 가스나 먼지 들이 음극을 띠도록 만들어 준다.First, the discharge plate 130 is mounted in the transverse direction on the inside of the diffusion flange 100 in the transverse direction, is formed in a net shape is mounted adjacent to the upper inlet 111 of the diffusion flange 100. . Therefore, gas or dust introduced through the inlet 111 of the diffusion flange 100 passes through the discharge plate 130 and descends. The discharge plate 130 is a negative (-) pole in contact with the external DC voltage, since the discharge plate 130 has a negative electrode so that the gas or dust passing through the discharge plate 130 has a negative electrode give.
이와 같이 형성된 방전판(130)의 일단에는 방전판(130)을 흔들어 주기 위한 초음파진동자(150a)가 결합된다. 즉, 초음파진동자(150a)는 가스나 먼지 등이 방전판(130)을 통과하다가 붙어있게 되는 것들을 털어내주는 역할을 수행한다.An ultrasonic vibrator 150a for shaking the discharge plate 130 is coupled to one end of the discharge plate 130 formed as described above. That is, the ultrasonic vibrator 150a serves to shake off gas or dust that passes through the discharge plate 130 and adheres thereto.
한편, 방전판(130)의 하부에는 가스나 먼지 등을 흡착시키는 집진판(140)이 배치된다.On the other hand, a dust collecting plate 140 for adsorbing gas or dust is disposed under the discharge plate 130.
집진판(140)은 그 일단이 디퓨젼 플랜지(100)의 내측 상부에 고정되면서 하향으로 경사지게 결합되는 것으로, 약 하향 30ㅀ정도의 기울기를 갖도록 형성된다. 이러한 집진판(140)의 일단에는 방전판(130)과 마찬가지로 초음파진동자(150b)가 장착된다. 그리고 집진판(140)에는 방전판(130)과 반대로 DC 전압중에서 양(+)극이 접점된다.The dust collecting plate 140 is one end of which is inclined downward while being fixed to the inner upper portion of the diffusion flange 100, and is formed to have an inclination of about 30 ° downward. One end of the dust collecting plate 140 is equipped with an ultrasonic vibrator 150b similarly to the discharge plate 130. In addition, the positive electrode is in contact with the dust collecting plate 140 in the DC voltage as opposed to the discharge plate 130.
즉, 방전판(130)을 통과하면서 음극(-)을 띠게 되는 가스나 먼지들이 집진판(140)이 양극(+)을 띠므로 자성에 의해 집진판(140)으로 모두 달라붙게 된다. 그리고 초음파진동자(150)에 의해 집진된 가스나 먼지 등을 털어내게 된다. 이때, 집진판(140)의 타측은 집진된 먼지 등이 초음파진동자(150b)에 의해 털어질때에 하강 할 수 있도록 디퓨젼 플랜지(100)의 내벽과 맞닿지 않도록 플랜지(100)의 내벽과 이격되게 형성됨이 바람직하다.That is, since the dust collecting plate 140 has a positive electrode (+) while passing through the discharge plate 130 and has a negative electrode (−), all of the dust collecting plate 140 adheres to the dust collecting plate 140 by magnetism. Then, the gas or dust collected by the ultrasonic vibrator 150 is shaken off. At this time, the other side of the dust collecting plate 140 is formed to be spaced apart from the inner wall of the flange 100 so as not to come into contact with the inner wall of the diffusion flange 100 so that the dust collected when the dust is shaken by the ultrasonic vibrator 150b. This is preferred.
이와 같이 형성된 집진판(140)의 하부에는 집진된 먼지 등이 모이도록 포집공간이 형성되며, 이 포집공간을 형성시키기 위해 디퓨젼 플랜지(100)의 하부에 형성되는 출구(121)와 포집공간을 이격시키는 포집막(160)이 형성된다.A collecting space is formed at the lower portion of the dust collecting plate 140 formed as described above to collect dust and the like, and spaced apart from the outlet 121 formed at the lower portion of the diffusion flange 100 to form the collecting space. Collecting film 160 is formed.
포집막(160)은 진공에 의해 포집된 먼지 등이 빨려 나가는 것을 방지하기 위 한 것으로, 디퓨젼 플랜지(100)의 바닥면에서부터 집진판(140)과는 반대로 상측으로 경사지게 연장된다. 즉, 포집막(160)은 디퓨젼 플랜지(100)의 출구(121)와 연통은 시키되, 서로 인접해 있는 포집공간과 출구(121)를 막에 의해 분리시켜 포집된 먼지 등이 포집막(160)의 경사면에 의해 가로 막히게 된다. 이때, 포집막(160)은 세 번의 기울기 변화를 주어 좀더 효율적이면서 많은 양의 먼지 등을 포집할 수 있도록 설계된다.The collecting film 160 is for preventing the dust collected by the vacuum from being sucked out, and is inclined upwardly from the bottom of the diffusion flange 100 as opposed to the dust collecting plate 140. That is, the collecting film 160 communicates with the outlet 121 of the diffusion flange 100, but separates the collecting space and the outlet 121 which are adjacent to each other by the membrane to collect the dust and the like. Is blocked by the slope of At this time, the collecting film 160 is designed to collect a large amount of dust and the like more efficiently by giving three gradient changes.
즉, 포집막(160)은 3단으로 되며, 제1단(161)은 약50~60ㅀ의 기울기를 갖고, 제2단(162)은 이보다 작은 20~30ㅀ의 기울기를 가지며, 제3단(163)은 가장 큰 80ㅀ이상의 기울기를 갖도록 설계되어 제1단(161)에서 1차로 먼지가 포집되고, 이 위로 다시 좀더 넓게 제2단(162)으로 먼지가 포집되며, 제3단(163)은 포집된 먼지들이 포집막(160)을 넘지 못하도록 막아주게 된다.That is, the collecting film 160 has three stages, the first stage 161 has an inclination of about 50 to 60 Hz, and the second stage 162 has an inclination of 20 to 30 Hz which is smaller than this. The stage 163 is designed to have an inclination of 80 가장 or more, so that dust is collected first in the first stage 161, and dust is collected in the second stage 162 more widely above this, and the third stage ( 163 prevents the collected dust from passing over the collecting film 160.
한편, 디퓨젼 플랜지(100)의 포집공간 외측벽에는 내부가 투시되는 투시창(170)이 형성된다. 투시창(170)은 내부의 포집공간에 얼마만큼의 먼지 등이 쌓였는지를 육안으로 확인하여 쌓여진 먼지의 배출시기를 확인할 수 있게 된다. 이때, 투시창(170)은 고압의 진공에 견딜 수 있도록 캐노피(canopy) 형태의 강화유리나 투명한 강화플라스틱으로 제작됨이 바람직하다.On the other hand, on the outer wall of the collecting space of the diffusion flange 100 is a see-through window 170 through which the inside is visible. The see-through window 170 can visually check how much dust, etc. have accumulated in the collection space therein, so that it is possible to check the discharge timing of the accumulated dust. At this time, the viewing window 170 is preferably made of a canopy (canopy) -type tempered glass or transparent tempered plastic to withstand high pressure vacuum.
하기에는 전술한 바와 같이 형성된 파우더 포집용 디퓨젼 플랜지(100)의 작용에 대해 간략하게 설명한다.Hereinafter, the operation of the powder collecting diffusion flange 100 formed as described above will be briefly described.
도 2는 본 발명에 따른 디퓨젼 플랜지의 작용을 나타낸 단면도이다.2 is a cross-sectional view showing the operation of the diffusion flange according to the present invention.
도 2를 참고하면, 상부체결부(110) 및 하부체결부(120)를 각각 반도체 확산 공정의 진공챔버와 진공펌프측에 결합시킨 후, 반도체 장비를 작동시킨다.Referring to FIG. 2, after coupling the upper fastening part 110 and the lower fastening part 120 to the vacuum chamber and the vacuum pump side of the semiconductor diffusion process, the semiconductor equipment is operated.
반도체 장비가 작동되면서 가스 주입이 되고, 공정이 마치게 되면 주입된 가스를 진공펌프쪽으로 빨아들인다.When the semiconductor equipment is operated, gas is injected, and when the process is completed, the injected gas is sucked into the vacuum pump.
진공펌프에 의해 흡입되는 가스 및 먼지 등은 디퓨젼 플랜지(100)의 입구(111)를 통해 유입되고, 이 가스나 먼지 등은 방전판(130)을 통과하면서 음극(-)을 띠게 된다.Gas and dust sucked by the vacuum pump are introduced through the inlet 111 of the diffusion flange 100, and the gas or dust is negatively negative while passing through the discharge plate 130.
음극을 띠는 가스나 먼지 미립자들은 양극을 띠는 집진판(140)에 모두 달라 붙게 된다. The negative gas or dust particles are all stuck to the positive electrode collecting plate 140.
이와 같이 집진판(140)에 붙게 되는 미립자들은 일정한 시간 주기로 초음파진동자(150)가 작동되어 아래로 떨어지게 된다. 즉, 초음파진동자(150)는 약 30분에 5분정도의 주기로 작동되어 방전판(130)에 붙어있는 미립자들을 떨어뜨리고, 집진판(140)에 붙어있는 미립자들을 떨어뜨리게 된다. 이때, 집진판(140)에 붙어있던 미립자들은 서로 엉겨붙으면서 덩어리로 만들어지고, 이 덩어리 들이 밑으로 굴러 떨어지게 된다. 물론 덩어리 외에도 미립자들이 떨어질 수도 있다.As such, the fine particles attached to the dust collecting plate 140 are moved down by being operated by the ultrasonic vibrator 150 at a predetermined time period. That is, the ultrasonic vibrator 150 is operated at a cycle of about 5 minutes every 30 minutes to drop the particles attached to the discharge plate 130, and to drop the particles attached to the dust collecting plate 140. At this time, the particulates attached to the dust collecting plate 140 are made of lumps while being tangled with each other, and these lumps are rolled down. Of course, in addition to agglomerates, particles may fall.
이와 같이 집진판(140)에서 떨어지게 되는 미립자들은 진공펌프에 의해 흡입되지만, 포집막(160)이 가로막고 있어 포집막(160)의 내측에 차곡차곡 쌓이게 된다.As described above, the particles falling from the dust collecting plate 140 are sucked by the vacuum pump, but the collecting film 160 is blocked so that they gradually accumulate inside the collecting film 160.
이와 같이 미립자들이 쌓이게 되면, 투시창(170)으로 그 양을 확인하여 적당한 양이 되면 디퓨젼 플랜지(100)를 해체하여 쌓인 미립자들을 제거하고 다시 결합시켜 재가동시키게 된다.When the fine particles are accumulated as described above, the amount is checked by the sight glass 170, and when the amount is appropriate, the diffusion flange 100 is dismantled to remove the accumulated fine particles and recombine by recombining.
상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당기술분야의 숙련된 당업자는 특허청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.Although described above with reference to a preferred embodiment of the present invention, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims You will understand.
도 1은 본 발명에 따른 디퓨젼 플랜지를 나타낸 단면도이며, 그리고1 is a cross-sectional view showing a diffusion flange according to the present invention, and
도 2는 본 발명에 따른 디퓨젼 플랜지의 작용을 나타낸 단면도이다.2 is a cross-sectional view showing the operation of the diffusion flange according to the present invention.
Claims (3)
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| KR101037340B1 (en) * | 2011-03-21 | 2011-05-26 | 알엔씨클린 주식회사 | Street cleaning vehicle |
| CN113521791A (en) * | 2021-06-23 | 2021-10-22 | 福建江夏学院 | Ultrasonic oscillation preparation device for photoelectric semiconductor film |
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| JP2000256856A (en) * | 1999-03-11 | 2000-09-19 | Tokyo Electron Ltd | Treating device, vacuum exhaust system for treating device, vacuum cvd device, vacuum exhaust system for vacuum cvd device and trapping device |
| KR100303989B1 (en) * | 1999-04-07 | 2001-09-26 | 고석태 | filtering equipment of semiconductor device scrubber system |
| KR20050071113A (en) * | 2003-12-31 | 2005-07-07 | 동부아남반도체 주식회사 | Ion collection powder filter of scrubber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101037340B1 (en) * | 2011-03-21 | 2011-05-26 | 알엔씨클린 주식회사 | Street cleaning vehicle |
| CN113521791A (en) * | 2021-06-23 | 2021-10-22 | 福建江夏学院 | Ultrasonic oscillation preparation device for photoelectric semiconductor film |
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