KR20080101322A - Trap apparatus and semiconductor device manufacturing apparatus using the same - Google Patents

Abstract

Residual product trapping apparatus, and a fabricating apparatus of a semiconductor device using the same are provided to enable the flow of discharge gas while maintaining a trapping performance of a residual product and to remove the trapped residual product efficiently by improving a trapping apparatus. A housing(310) which has a discharge gas input unit and a discharge gas output unit includes a passage way which connects the input unit(321) to the output unit(323) and is placed at an inner upper portion of the housing. A trapping plate combination body(330) which is placed at an inner power portion of the housing includes multistep trapping plates at which a residual product is trapped by contacting with the discharge gas inflowing into the discharge gas input unit. The housing includes: a horizontal passage unit which makes the passage be horizontal; and at least one vertical passage unit(313) which enlarges the horizontal passage unit(311) in the vertical direction.

Description

Trap apparatus and semiconductor device manufacturing apparatus using the same

1 is a conceptual diagram illustrating a general semiconductor device manufacturing apparatus;

2 is a perspective view showing a reaction by-product collecting device according to the present invention,

3 is a cutaway perspective view showing a reaction by-product collecting device according to the present invention,

Figure 4a is a perspective view showing a collecting plate assembly according to the present invention,

Figure 4b is a plan view showing a collecting plate assembly according to the present invention,

5a and 5b is a plan view showing another embodiment of the collecting plate assembly according to the present invention,

6 is a conceptual diagram illustrating a manufacturing apparatus of a semiconductor device according to the present invention.

<Explanation of symbols for the main parts of the drawings>

100: chamber 200: turbo chamber

300: collecting device 310: housing

311: horizontal flow path portion 313: vertical flow path portion

315: joiner 317:

319: fastening pin 321: input unit

323: output unit 330: collecting plate assembly

331: collection plate 331a: through part

333: support 335: auxiliary support

325,337 knob 400: dry pump

510,520,530: exhaust pipe

The present invention relates to a reaction by-product collecting device and a device for manufacturing a semiconductor device using the same, and more particularly, to efficiently react the reaction by-product contained in the exhaust gas while smoothly flowing the exhaust gas from the chamber in the semiconductor device manufacturing process. The present invention relates to a reaction by-product collecting device for collecting and removing the same, and an apparatus for manufacturing a semiconductor device using the same.

In general, in the semiconductor manufacturing process using the semiconductor device manufacturing apparatus, there are a large amount of remaining gas (unreacted gas) and undesired reaction by-products generated as the reaction proceeds in the process chamber during the process. Done. The reaction by-product containing such unreacted gas is exhausted to the outside by an exhaust system formed at one side of the process chamber.

1 is a conceptual diagram illustrating an apparatus for manufacturing a general semiconductor device.

Referring to FIG. 1, an apparatus for manufacturing a semiconductor device according to a general technique includes a collecting device 2 connected to a process chamber 1 to collect reaction byproducts, and a vacuum pump 3 connected to the collecting device 2. It includes.

At this time, the process chamber 1, the collecting device 2, the collecting device 2, and the vacuum pump 3 are connected through exhaust pipes 4 and 5, respectively.

The manufacturing apparatus of the general semiconductor element of the structure mentioned above is as follows.

A predetermined reaction gas is introduced into the process chamber 1 to perform a predetermined reaction process. After the reaction process, the reaction by-product including the unreacted gas during the reaction process is exhausted through the exhaust pipe (4). The reaction by-products exhausted to the exhaust pipe 4 are collected in a powder or gel form by the collecting device 2, and gas and floating ultrafine particles other than the collected reaction by-products are discharged to the outside through the vacuum pump 3.

At this time, the inside of the process chamber by the lower vacuum pump can effectively exhaust the reaction by-products while maintaining a uniform pressure.

On the other hand, when no collecting device is installed, certain by-products are deposited inside the vacuum pump, and if the deposition continues, the by-products are laminated or powder is formed to be visible to the naked eye, and the by-products form the vacuum pump. This adversely affects the operation of the components, causing the vacuum pump to stop working or the life of the battery is drastically shortened. Thus, by installing a collecting device between the vacuum pump and the process chamber to remove impurities due to the reaction by-products it is possible to prevent damage to the vacuum pump.

However, even in a general exhaust system in which a collecting device is installed, reaction by-products which are not completely collected by the collecting device are generated, and these uncollected reaction by-products settle in the exhaust pipe between the collecting device and the vacuum pump, causing clogging of the exhaust pipe. In addition, a problem arises in that a part of the reaction byproduct penetrates into the vacuum pump and disturbs the operation of the pump to change the pressure inside the process chamber.

Due to this problem, various collection devices have been proposed and used to improve the reaction by-product collection performance.However, the reaction by-products collected in the collection device block the flow path of the collection device and paralyze the function of the vacuum pump due to excessive improvement of the collection performance. A problem occurred in the removal of the collected reaction by-products.

Therefore, the present invention improves the collection device to solve the above problems, while maintaining the collection performance of the reaction by-products while maintaining a smooth flow of the exhaust gas, the reaction by-product collecting device that can easily remove the collected reaction by-products and It is an object of the present invention to provide an apparatus for manufacturing a semiconductor device using the same.

The present invention for achieving the above object has a housing having an exhaust gas input unit and an exhaust gas output unit, the upper side therein is formed a flow path connecting the input unit and the output unit; It is disposed under the housing and provides a reaction by-product collection device comprising a collection plate assembly having a multi-stage collection plate in which the exhaust gas flowing into the input unit is contacted to collect the reaction by-products.

The housing may include a horizontal flow path portion configured to form the flow path in a horizontal direction thereon; At least one vertical flow path portion that extends by partitioning the horizontal flow path in the vertical direction in the lower portion, characterized in that the collecting plate assembly is installed on the lower side of the vertical flow path portion, respectively.

The input unit and the output unit may be disposed above the installation position of the collection plate assembly in the housing. When two or more vertical flow path units are installed, the input unit may pass through the horizontal flow path unit and the bottom surface thereof may be disposed. Preferably, the output unit extends to an upper portion of any one selected from among the vertical flow channel units, and the output unit is disposed above any other one selected from the vertical flow channel units.

In addition, the lower surface of the vertical flow path portion is detachably installed, the collection plate assembly is characterized in that the detachable installation in the housing.

And, the collection plate assembly is a multi-stage collection plate spaced apart from each other vertically; It is fixed to the end of the collecting plate of the multi-stage characterized in that it has a support for integrally supporting the multi-stage collection plate.

Here, it is preferable that a coupling hole in which the collecting plate assembly is detached is formed in the vertical flow path part of the housing, and the coupling hole is sealed by a support of the collection plate assembly.

In addition, the size of the collecting plate is characterized in that spaced apart from the inner wall of the vertical flow path.

In addition, a plurality of through portions are formed in each of the multi-stage collection plates, and the through portions formed in the collection plates facing each other are formed so that their formation positions do not coincide, and the through portions are at least one slot or hole. .

On the other hand, according to another aspect of the invention, the chamber; A housing connected to the chamber and having an exhaust gas input part and an exhaust gas output part, an upper side of which is formed a flow path connecting the input part and an output part, and disposed below the inside of the housing and exhausted into the input part; A collecting device including a collecting plate assembly having a multistage collecting plate in which gas is contacted to collect reaction byproducts; It provides a device for manufacturing a semiconductor device comprising a pump connected to the collecting device.

Here, a turbo pump is installed between the chamber and the collecting device, and the pump connected to the collecting device is a dry pump.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail.

However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

The trapping apparatus of the present invention traps by reacting or depositing the reaction by-products in the gaseous state, or traps the solids precipitate.

2 is a perspective view showing a reaction by-product collecting device according to the present invention, Figure 3 is a cutaway perspective view showing a reaction by-product collecting device according to the present invention.

2 and 3, the reaction by-product collecting device according to the present invention includes a housing 310 in which exhaust gas is input and output and a flow path of the exhaust gas is formed, and the reaction by-product is coupled to the housing 310. The collecting plate assembly 330 is collected.

The housing 310 has an input unit 321 through which the exhaust gas is input and an output unit 323 through which the exhaust gas is output, and a flow path communicating the input unit 321 and the output unit 323 therein is provided therein. Is formed.

The housing 310 is a horizontal flow path portion 311 so that the flow path is formed in the horizontal direction in the upper portion of the inside thereof, and the horizontal flow path portion 311 is partitioned and extended in the vertical direction in the lower portion of the inside or A plurality of vertical flow path portion 313 is included.

In more detail, as illustrated in FIG. 3, the horizontal flow path part 311 has a hollow shape in which the input part 321 is installed on one side of the upper surface. In the present invention, the horizontal flow path portion 311 is illustrated as a rectangular parallelepiped housing, but may be manufactured in any shape as long as the inside is hollow to allow exhaust gas to flow.

In addition, a handle 325 may be attached to an upper surface of the horizontal flow path part 311 so that an operator can easily mount the capping device when installing or moving the collecting device.

In addition, the input unit 321 and the output unit 323 may use a tube, a tube or a hose that can smoothly flow the exhaust gas, in the present invention has been illustrated as a tube.

In addition, the vertical flow path part 313 is formed to extend in the vertical direction from the lower surface of the horizontal flow path part 311, each vertical flow path part 313 is formed independently of each other or divided partition (not shown) It can be provided and it can divide and form a flow path. At this time, it is natural that the horizontal flow path part 311 and the vertical flow path part 313 communicate with each other to form a flow path through which exhaust gas can flow.

In the present invention, two cylindrical vertical flow path portions 313a and 313b extending independently from the bottom surface of the horizontal flow path portion 311 are formed to have a substantially "?" Shape. In this case, the vertical flow paths 313a and 313b may also be manufactured in any shape as long as the flow paths of the horizontal flow path part 311 can be extended in the vertical direction. In addition, it is preferable to apply the number of the vertical flow path part 313 to one or more pieces in consideration of the amount of exhaust gas and the collection efficiency of the reaction byproduct.

At this time, the input unit 321 installed to input the exhaust gas injected from the chamber penetrates the upper surface of the horizontal flow path unit 311 and is disposed to extend in a vertical direction, and a lower end thereof is any one of the vertical flow path units 313. Preferably, it extends to an upper portion of the vertical flow path part 313a positioned on the first side of the plurality of vertical flow path parts 313. Thus, when the exhaust gas flows into the housing 310, the exhaust gas is not connected to the horizontal flow path part 311, but passes through the horizontal flow path part 311 and then flows into the vertical flow path part 313a.

In addition, the output unit 323 installed to output the exhaust gas discharged from the housing 310 is located at any one of the vertical flow path units 313, preferably at the outermost side of the plurality of vertical flow path units 313. It passes through the upper side of the vertical flow path portion 313b is connected to the horizontal flow path portion 311 and extends in the horizontal direction.

Thus, as shown in FIG. 3, the exhaust gas flows into the input part 321, then rounds the vertical flow path part 313a, and then rounds the other vertical flow path part 313b through the horizontal flow path part 311. And then exhausted to the output unit 323.

In addition, a coupling hole 315 to which the collection plate assembly 330 is coupled is formed at a lower side of the vertical flow path 313, that is, a position lower than the position at which the output unit 323 is formed. Therefore, even if the reaction by-products are excessively collected in the capture plate assembly 330 coupled to the coupling hole 315, an exhaust gas flows smoothly through the horizontal flow path portion 311 and the upper portion of the capture plate assembly 330. It is desirable to secure enough.

In addition, the lower surface 317 of the vertical flow path part 313 may be detachably installed from the main body of the vertical flow path part 313. In the present invention, the main body and the lower surface 317 of the vertical flow path part 313 may be detachably installed. Separately manufactured and fastened using fastening means, for example fastening pins (319). In addition, the inside of the vertical flow path 313 is sealed between the main body and the lower surface 317 of the vertical flow path 313 by using a sealing means, for example, an O-ring (not shown).

Thus, even if the reaction by-product flows downward by its own weight and is stacked on the lower surface 317, the lower surface 317 may be easily removed from the main body of the vertical flow path 313 to be washed or replaced.

The collecting plate assembly 330 is disposed on the flow path through which the exhaust gas flows to collect reaction by-products by contact with the exhaust gas, and is detachably coupled to the coupling hole 315 through the vertical flow path part 313. do.

Figure 4a is a perspective view showing a collecting plate assembly according to the present invention, Figure 4b is a plan view showing a collecting plate assembly according to the present invention.

As shown in FIGS. 4A and 4B, the collection plate assembly 330 is installed at the lower side of the vertical flow path part 313, respectively, and has multiple collection plates 331 spaced apart from each other in a vertical direction. The supporter 333 is fixed to an end of the multistage collection plate 331 and integrally supports the multistage collection plate 331.

In addition, the multi-stage collection plate 331 side portion assists the multi-stage collection plate 331 is supported, and the auxiliary support unit 335 integrally supporting the multi-stage collection plate 331 so as to support the weight of the reaction by-products. ) May be further fixed. At this time, the auxiliary support 335 is fixed only to a portion of the side of the collecting plate 331, it is natural to secure the flow path of the exhaust gas.

The support part 333 is manufactured in a shape corresponding to the coupling hole 315 formed in the vertical flow path part 313, and the support part 333 is coupled to the collection plate assembly 330 by the coupling hole 315. ) Seals the coupling hole 315. In this case, it is preferable to insert a sealing means, for example, an O-ring (not shown), between the coupling hole 315 and the support part 333 to seal the inside of the vertical flow path part 313.

The collection plate 331 preferably has a shape corresponding to the internal shape of the vertical flow path part 313, the size of which is smaller than the inner diameter of the vertical flow path part 313 so that the vertical flow path part 313 Spaced apart from the inner wall of the exhaust gas to secure a flow path.

In addition, a plurality of through portions 331a are formed in the multi-stage collection plate 331, respectively. The through portions 331a formed in the collection plates 331 facing each other are formed so that their formation positions do not overlap each other. The reaction by-product is made so that the exhaust gas passing through the through part 331a of the collecting plate 331 does not pass through the through part 331a of the collecting plate 331 facing it, but contacts the surface of the collecting plate 331. Make the collection of

The through part 331a formed in the multi-stage collection plate 331 is perforated through one or more slots or holes. In the present invention, a plurality of slots and holes are mixed.

As shown in FIGS. 4A and 4B, the uppermost collecting plate 331 is disposed at the center of the hole (solid line), and the slot (solid line) is radially disposed at the center of the collecting plate 331. Without arranging the holes, the slots (dotted lines) were disposed to rotate so as not to overlap with the slots (solid lines) formed on the collecting plate 331 facing upward, and the lowermost collecting plate 331 is the best collecting plate 331. Holes (solid lines) and slots (solid lines) were disposed to have the same arrangement as. Accordingly, the through portions 331a formed on the collecting plate 331 as a whole are arranged in a zigzag so that the positions of the through portions 331a formed on the collecting plates 331 facing each other do not coincide with each other.

5A and 5B are plan views showing another embodiment of the collecting plate assembly according to the present invention.

5A and 5B illustrate various embodiments of the penetrating portion 331a formed in the collecting plate 331, and the penetrating portion 331a illustrated in FIG. 5A radially covers a plurality of slots having a relatively short length. The through portion illustrated in FIG. 5B placed a number of slots in parallel having a relatively long length. 4A and 4B, the through parts 331a formed in the collecting plate 331 faced with each other are disposed not to overlap each other.

The reason for arranging the penetrating portion 331a radially or in parallel as illustrated in FIGS. 4B, 5A and 5B is to eliminate the position coinciding with the penetrating portion 331a formed in the collecting plate 331 facing it. However, the technical idea of the penetrating portion of the present invention is not limited to the shape of the penetrating portion exemplified above.

In addition, the support part 333 is attached to the handle 337 on the opposite side of the surface in which the collecting plate 331 is formed so that the worker can easily attach it when attaching and detaching the collecting plate assembly 330.

Referring to the operating state of the reaction by-product collecting device configured as described above are as follows.

FIG. 3 is a cutaway perspective view illustrating a collection plate assembly according to the present invention, in which the flow of exhaust gas is indicated by an arrow.

Referring to FIG. 3, when the exhaust gas exhausted from the chamber is not connected to the housing 310 through the input unit 321, and is not connected to the horizontal flow path part 311 but passes through the vertical flow path part 313a, the exhaust gas is exhausted. The gas is in contact with the lower collecting plate assembly 330 according to the traveling direction.

The reaction by-products in the exhaust gas contacted with the collecting plate assembly 330 are solidified or gelled in contact with the surface of the collecting plate 331 and deposited or attached to the surface of the collecting plate 331 or flow downwardly by self-weight to vertically. It is deposited or adhered to the lower surface 317 of the flow path portion 313a.

At this time, the exhaust gas flows in a curved or zigzag pattern between the through part 331a or the collecting plate 331 and the inner wall of the vertical flow path part 313a formed in the collecting plate 331 to easily contact each collecting plate 331. Done. In other words, as the area where the exhaust gas contacts the collection plate increases, the contact amount of the exhaust gas increases, and for this reason, the collection efficiency of the reaction by-products increases.

The exhaust gas flowing into the one vertical flow path part 313a is moved around the one vertical flow path part 313a and then moved to the horizontal flow path part 311 and flows into another adjacent vertical flow path part 313b. Exhaust gas introduced into other adjacent vertical flow path portions 313b flows along the inner wall of the through portion 331a or the collection plate 331 formed on the collecting plate 331 and the vertical flow path portion 313b, respectively. Contact the surface of the collecting plate 331. The reaction by-products are collected in the collecting plate 331 and the purified exhaust gas is exhausted to the dry pump 400 through the output unit 323.

When the reaction by-products are excessively attached to the lower surfaces of the collecting plate 331 and the vertical flow path 313 as described above, the collecting plate assembly 330 and the lower surface 317 of the vertical flow path 313 are separated from the housing 310. By cleaning or replacing to maintain the performance of the collecting device (300).

If the reaction by-products are excessively deposited or adhered to the lower surface 317 of the collecting plate 331 and the vertical flow path part 313, sufficient flow paths are provided to allow the exhaust gas to flow to the upper part of the collecting plate assembly 330. Can be stopped or broken.

Hereinafter, a semiconductor device manufacturing apparatus including the reaction byproduct collecting device will be described. Among the contents to be described later, the overlapping description of the reaction by-product collecting device according to the present invention will be omitted or briefly described.

The semiconductor device manufacturing apparatus according to the present invention includes a chamber having a reaction space, a gas supply system for supplying a predetermined reaction gas or source gas into the chamber, and an exhaust system for exhausting residual gas in the chamber, including a collecting device. It includes.

6 is a conceptual diagram illustrating a manufacturing apparatus of a semiconductor device according to the present invention.

Referring to FIG. 6, an apparatus for manufacturing a semiconductor device according to the present invention includes a chamber 100; A collecting device 300 connected to the chamber 100 to collect reaction byproducts of the exhaust gas input from the chamber 100; It is connected to the collecting device 300 includes a vacuum pump 400 to form a vacuum of the chamber 100.

The vacuum pump 400 may include, for example, a dry pump.

In addition, when forming a high vacuum in the chamber 100, it may further include a turbo pump 200 installed between the chamber 100 and the collecting device (300). Here, the chamber 100, the turbo pump 200, the collecting device 300, and the dry pump 400 are each connected through predetermined exhaust pipes 510, 520, and 530. In addition, a predetermined valve (not shown) may be formed in each of the exhaust pipes 510, 520, and 530.

The chamber 100 is provided with a substrate support (not shown) on which a semiconductor wafer is to be mounted, and gas supply means (not shown) for supplying a plurality of gases such as a predetermined reaction gas, source gas, and purge gas. More).

Both the turbo pump 200 and the dry pump 400 are pumps for making the chamber 100 at a constant pressure (including a vacuum state), and the turbo pump 200 maintains the inside of the chamber 100 in a high vacuum. When necessary, the dry pump 400 is used when the exhaust gas of the chamber 100 is corrosive. Since the turbo pump 200 and the dry pump 400 are part of a known technology, detailed descriptions of the configuration and function will be omitted.

The collecting device 300 is connected between the turbo pump 200 and the dry pump 400, the turbo pump 200 is connected to the input unit 321 provided in the collecting device 300, the output unit ( The dry pump 400 is connected to 323.

Specific configuration and operation of the collecting device 300 will be omitted as described in detail above.

However, the collecting device 300 may further include a device for generating static electricity or plasma by cooling or heating the outside of the housing or forming a separate electrical potential in order to increase the collection effect of the reaction byproduct.

What has been described above is only an exemplary embodiment of the reaction by-product trapping apparatus and the apparatus for manufacturing a semiconductor device using the same, the present invention is not limited to the above-described embodiment, as claimed in the following claims Likewise, without departing from the gist of the present invention, any person having ordinary knowledge in the field of the present invention will have the technical spirit of the present invention to the extent that various modifications can be made.

As described above, the present invention divides the inside of the collecting device into a horizontal flow path portion and a vertical flow path portion, and arranges a collecting plate assembly below the vertical flow path portion so that the reaction by-products are excessively collected. There is an effect that can secure a sufficient flow path of exhaust gas to the upper side.

In addition, by installing a collecting plate assembly having a multi-stage collecting plate formed in a zigzag through-through part to increase the area in which the exhaust gas is in contact with the collecting plate has the effect of improving the collection performance of the reaction by-products.

Securing a sufficient flow path of the exhaust gas and improving the collection performance of the reaction by-product has the effect of extending the life of the dry pump.

In addition, the lower surface of the collecting plate assembly and the vertical flow path portion is detachably installed in the main body of the collecting device has an effect that can easily remove the collected reaction by-products.

Claims (21)

A housing having an exhaust gas input part and an exhaust gas output part, and a flow path connecting the input part and the output part to an upper side thereof; And a collecting plate assembly having a multi-stage collecting plate disposed under the housing and contacting the exhaust gas flowing into the input unit to collect the reaction by-products. The method of claim 1, wherein the housing A horizontal flow path portion configured to form the flow path in a horizontal direction thereon; At least one vertical flow path portion that extends by partitioning the horizontal flow path in the vertical direction, The collection plate assembly is the reaction by-product collection device, characterized in that each installed on the lower side of the vertical flow path. The method of claim 2, Reaction by-product collection device, characterized in that the input portion and the output portion in the housing is disposed above the installation position of the collecting plate assembly. The method of claim 3, wherein At least two vertical flow paths are installed, The input portion penetrates the horizontal flow passage portion, and a bottom surface thereof extends to an upper portion of any one selected from the vertical flow passage portions, and the output portion is disposed above any other one selected from the vertical flow passage portions. Reaction byproduct collection device. The method of claim 2, Reaction by-product collection device, characterized in that the lower surface of the vertical flow path is detachably installed. The method according to claim 1 or 2, The collection plate assembly is a reaction by-product collection device, characterized in that detachably installed in the housing. The method of claim 6, wherein the collection plate assembly is A multi-stage collection plate spaced apart from each other vertically; Reaction by-product collection device characterized in that it has a support portion fixed to the end of the collecting plate of the multi-stage integrally supporting the collecting plate of the multi-stage. The method of claim 7, wherein Reaction by-product collection device, characterized in that the vertical passage portion of the housing is formed with a coupling hole detachable to the collecting plate assembly, the coupling hole is sealed by the support of the collecting plate assembly. The method of claim 7, wherein The size of the collection plate is a reaction by-product collection device, characterized in that spaced apart from the inner wall of the vertical flow path. The method of claim 7, wherein Each of the multi-stage collection plate is formed with a plurality of through parts, the through-products formed in the collection plate facing each other, the reaction by-product collection device, characterized in that the formed position is formed so as not overlap each other. The method of claim 10, The through-products collection device by the reaction portion, characterized in that at least one slot or hole. A chamber; A housing connected to the chamber and having an exhaust gas input part and an exhaust gas output part, an upper side of which is formed a flow path connecting the input part and an output part, and disposed below the inside of the housing and exhausted into the input part; A collecting device including a collecting plate assembly having a multistage collecting plate in which gas is contacted to collect reaction byproducts; Apparatus for manufacturing a semiconductor device comprising a pump connected to the collecting device. The method of claim 12, A turbo pump is installed between the chamber and the collecting device, and the pump connected to the collecting device is a dry pump. The method of claim 12, wherein the housing A horizontal flow path portion configured to form the flow path in a horizontal direction thereon; At least one vertical flow path portion that extends by partitioning the horizontal flow path in the vertical direction, The collection plate assembly is a device for manufacturing a semiconductor device, characterized in that provided in the lower side of the vertical flow path. The method of claim 14, And the input part and the output part of the housing are disposed above the installation position of the collecting plate assembly. The method of claim 15, At least two vertical flow paths are installed, The input portion penetrates the horizontal flow passage portion, and a bottom surface thereof extends to an upper portion of any one selected from the vertical flow passage portions, and the output portion is disposed above any other one selected from the vertical flow passage portions. Device for manufacturing a semiconductor device. The method of claim 14, The lower surface of the vertical flow path portion is a semiconductor device manufacturing apparatus, characterized in that detachably installed. The method according to claim 12 or 14, The collection plate assembly is a semiconductor device manufacturing apparatus, characterized in that detachably installed in the housing. 15. The method of claim 12 or 14, wherein the collection plate assembly is A multi-stage collection plate spaced apart from each other vertically; It is fixed to the end of the collecting plate of the multi-stage includes a support for integrally supporting the multi-stage collection plate, A plurality of through portions are formed in each of the multi-stage collection plates, and the through portions formed in the collection plates facing each other are formed so that their formation positions do not coincide. The method of claim 19, And a coupling hole in which the collecting plate assembly is detached and formed in the vertical flow path portion of the housing, wherein the coupling hole is sealed by a support of the collecting plate assembly. The method of claim 19, And said through part is at least one slot or hole.

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