KR20080058858A - Module providing thermal environment in apparatus for growing semiconductor single crystal based on czochralski and apparatus using the same - Google Patents

Abstract

A thermal environment module used in a semiconductor single crystal ingot manufacturing apparatus based on a Czochralski method and an apparatus using the same are provided to improve productivity by increasing a defect-free single crystal pulling speed. A crucible is formed to store a semiconductor melt(M) as an ingot-growing target. A heater(120) is installed to surround a sidewall of the crucible in order to apply radiative heat to the semiconductor melt of the crucible. An adiabatic wall body(130) includes a cavity for storing the heater and the crucible and is installed around the heater in order to face an inner sidewall of the cavity and an outer circumference of the heater to each other and to prevent loss of the radiant heat of the heater to the outside. A radiation emission unit(150) is installed at a top end of the adiabatic wall body in order to emit the radiant heat from a top part of the heater to the outside.

Description

Module providing thermal environment used in apparatus for manufacturing semiconductor single crystal ingot by Czochralski method and apparatus using the same {Module providing thermal environment in apparatus for growing semiconductor single crystal based on Czochralski and Apparatus using the same}

The following drawings attached to this specification are illustrative of preferred embodiments of the present invention, and together with the detailed description of the invention to serve to further understand the technical spirit of the present invention, the present invention is a matter described in such drawings It should not be construed as limited to.

1 is a right sectional view of a conventional thermal environment providing module generally used in a semiconductor single crystal ingot production apparatus by Czochralski method.

2 is a right side cross-sectional view of a module for providing a thermal environment according to a first embodiment of the present invention.

3 is a right side cross-sectional view of a module for providing a thermal environment according to a second embodiment of the present invention.

4 is a right side cross-sectional view of a module for providing a thermal environment according to a third embodiment of the present invention.

5 is a right side cross-sectional view of a module for providing a thermal environment according to a fourth embodiment of the present invention.

6 is a view comparing a right side cross section of a conventional thermal environment providing module (comparative example) provided for simulation with a thermal environment providing module (embodiment) according to the first embodiment of the present invention.

FIG. 7 is a graph illustrating a simulation result of a vertical temperature gradient of the melt side at the solid-liquid interface when a silicon single crystal ingot is grown using the thermal environment providing module according to the comparative example and the example shown in FIG. 6.

FIG. 8 is a graph illustrating a simulation result of a solid-liquid interface when a silicon single crystal ingot is grown using a thermal environment providing module according to the comparative example and the example shown in FIG. 6.

<Main reference number in drawing>

100: quartz crucible 110: crucible support

120: heater 130: heat insulation wall

140: floor insulation 150: radiant heat emitting portion

160: heat distribution profile M: silicone melt

170: solid-state interface C: ingot

The present invention relates to a thermal environment providing module used in a semiconductor single crystal ingot growth apparatus using the Czochralski method, and more particularly, to optimize a thermal environment to improve the pulling speed of a defect-free single crystal ingot. A thermal environment providing module and a semiconductor single crystal ingot manufacturing apparatus using the same.

Monocrystalline silicon used for the manufacture of semiconductor devices is usually produced by the Czochrals key method. In the Czochralski method, polycrystalline silicon is filled into a quartz crucible provided on a graphite eggplant support, and then the polycrystalline silicon is heated with a heater surrounding the outer circumferential surface of the quartz crucible to be melted into a liquid phase. Then, the seed made of the single crystal is brought into contact with the melt surface in the quartz crucible, and then slowly pulled while rotating the seed, the single crystal silicon ingot starts to grow from the solid-liquid interface. At this time, the shape of the solid-liquid interface on which the ingot is grown is convex upward. When the seed is pulled up, a single crystal neck is initially formed. When the neck is formed, the seeding speed is reduced to expand the diameter of the growing ingot to a desired diameter. After the diameter of the ingot is expanded, the seed is raised while controlling the temperature and the pulling speed of the silicon melt to grow the body of the ingot having a constant diameter. If the ingot grows slowly, the silicon melt is used up and the height of the solid-liquid interface is lowered. Therefore, as the ingot grows slowly, the silicon crucible is gradually raised while rotating the silicon crucible in a direction opposite to the direction of rotation of the seed to maintain the same height of the solid-liquid interface. In the latter part of the ingot growth, the diameter of the single crystal gradually decreases to make the shape of the bottom of the ingot end-cone. Typically end-cones are formed by increasing the rate of single crystal pulling and increasing the amount of heat supplied to the quartz crucible. Through this process, when the radius of the ingot becomes small enough, the ingot is completely separated from the solid-liquid interface to complete the growth of the silicon single crystal ingot.

It is well known that increasing the vertical temperature gradient (crystal side or melt side) at the solid-liquid interface can increase the rate of defect-free single crystal growth in the production of single crystal silicon ingots by Czochralski method. In recent years, it has been proved through the experiment that the higher the convex shape of the solid-liquid interface, the faster the growth rate of the defect crystals. The increase in the convexity of the solid-liquid interface means that the driving force to move the silicon atoms to the solid-liquid interface side is increased. Therefore, in order to increase the convexity of the solid-liquid interface, it is necessary to optimize the thermal environment provided by the heater to increase the driving force to move the silicon atoms to the solid-liquid interface by increasing the vertical temperature gradient from the solid-liquid interface to the melt side.

To optimize the thermal environment of the heater, the top of the silicon melt lowers the temperature and the temperature of the silicon melt increases overall, while maximizing the amount of radiant heat transferred to the hot melt region below the solid liquid interface, thereby increasing the vertical temperature gradient from the solid liquid interface to the melt side. Should be increased. To do this, it is important to create a thermal environment where the power of the heater can be maximized. By the way, the conventional semiconductor single crystal ingot manufacturing apparatus has a limit in maximizing the power of a heater.

Here, the high temperature melt region means a region near the point having the highest temperature when the temperature is measured vertically from the center of the solid-liquid interface to the bottom surface of the quartz crucible. For reference, when the temperature of the silicon melt is measured from the center of the solid-liquid interface to the bottom surface of the quartz crucible, the temperature increases as the depth of the melt increases from the solid-liquid interface to the maximum value, and then reaches the bottom of the quartz crucible. Decreases.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the main component of the module which provides a thermal environment in the semiconductor single crystal ingot manufacturing apparatus by the conventional Czochralski method.

Referring to the drawings, the conventional thermal environment providing module has a heater 10 that emits radiant heat by electrical resistance. Inside the heater 10, the crucible support 30, which is tightly coupled to the quartz crucible 20 containing the silicon melt M and the outer circumferential surface of the quartz crucible 20, supports the shape of the quartz crucible 20 at a high temperature. ) Is provided. In addition, a heat insulating wall 40 and a bottom heat insulating material 50 are respectively installed at the periphery of the heater 10 and the bottom of the crucible support 30 to prevent the radiant heat emitted from the heater 10 from being lost to the outside. The heat insulating wall 40 and the bottom heat insulating material 50 are mainly made of carbon fiber or carbon composite material.

On the other hand, the power of the heater 10 in the single crystal ingot manufacturing apparatus is the diameter of the ingot (C) at the triple point (G) where the ingot (C) and the melt (M) drawn from the silicon melt (M) and the external gas environment meet each other. Is adjusted automatically. That is, if the diameter of the ingot C exceeds the reference value, the temperature of the triple point G decreases, so that the power of the heater 10 is increased, and if the ingot diameter falls below the reference value, the temperature of the triple point G increases. Lower the power of the heater 10.

By the way, the heat insulating wall 40 and the bottom heat insulating material 50 is usually designed to focus only on the heat insulation of the radiant heat emitted by the heater 10. Therefore, the quartz crucible 10 containing the silicon melt (M) is strengthened around the lower and side portions, and a structure that induces heat loss in the upper portion is adopted. Therefore, when looking at the heat distribution profile 50 provided by the heater 10, a considerable amount of radiant heat (see A) is also transferred to the top of the silicon melt M, and consequently the top temperature of the silicon melt M. In particular, there is a limit to increasing the power of the heater 10 by lowering the temperature of the triple point (G). As described above, the restriction on the power increase of the heater 10 increases the temperature of the silicon melt M around the hot melt region, causing an increase in the vertical temperature gradient from the solid-liquid interface to the melt side, thereby increasing the convexity of the solid-liquid interface. There is a limit. Accordingly, there is a conventional difficulty in improving the pulling speed of the defect-free single crystal ingot.

Therefore, the present invention was devised to solve the above-mentioned problems of the prior art, and provides a thermal environment providing module for optimizing a thermal environment to increase the defect-free single crystal pulling speed in a semiconductor single crystal ingot manufacturing apparatus by Czochralski method and It is an object of the present invention to provide a semiconductor single crystal ingot manufacturing apparatus having the same.

According to an aspect of the present invention for achieving the above technical problem, the module for providing a thermal environment used in the apparatus for producing a defect-free single crystal ingot by the Czochralski method includes a crucible containing a semiconductor melt that is an object of ingot growth; A heater installed to surround sidewalls of the crucible to provide radiant heat to the semiconductor melted in the crucible; And a heat insulation wall provided with a hollow for accommodating the heater and the crucible, and installed around the heater so that the inner sidewall of the hollow and the outer circumferential surface of the heater face each other to prevent the radiant heat emitted from the heater from being lost to the outside. The upper end of the heat insulation wall is characterized in that it is provided with a radiant heat radiating portion for radiating the radiant heat emitted from the top of the heater to the outside.

According to another aspect of the present invention for achieving the above technical problem, the module for providing a thermal environment used in the apparatus for producing a defect-free single crystal ingot by the Czochralski method includes a crucible containing a semiconductor melt that is an object of ingot growth; A heater installed to surround sidewalls of the crucible to provide radiant heat to the semiconductor melted in the crucible; And a heat insulation wall provided with a hollow for accommodating the heater and the crucible, and installed around the heater so that the inner sidewall of the hollow and the outer circumferential surface of the heater face each other to prevent the radiant heat emitted from the heater from being lost to the outside. The upper end of the heat insulating wall is characterized in that the heat insulating attenuation portion thinner than the other wall portion is provided.

Preferably, the radiant heat radiating portion is an opening formed in the insulating wall. More preferably, the insulating wall has a cylindrical shape and the opening is an annular opening formed around the upper end of the insulating wall.

Preferably, the heat insulation wall has a cylindrical shape, and the heat insulation attenuation portion is an annular groove formed in a predetermined width around the upper end of the heat insulation wall.

The thermal environment providing module according to the present invention may further include a floor insulation coupled to the lower end of the insulation wall. In addition, between the crucible and the heater, it may further include a crucible support coupled to the outer peripheral surface of the crucible to support the shape of the crucible in a high temperature environment.

The semiconductor single crystal ingot manufacturing apparatus using the Czochralski method according to an aspect of the present invention for achieving the above technical problem, a crucible containing a semiconductor melt that is the target of ingot growth; A crucible support coupled to the outer circumferential surface of the crucible to support the shape of the crucible in a high temperature environment; A heater installed to surround sidewalls of the crucible support to provide radiant heat to the semiconductor melted in the crucible; The crucible, the crucible support and the hollow to accommodate the heater is provided, and is installed around the heater so that the inner side wall of the hollow and the outer peripheral surface of the heater to prevent the radiant heat emitted from the heater to the outside, the upper portion An insulated wall having a radiant heat radiating part for radiating radiant heat emitted from an upper portion of the heater to the outside; Single crystal ingot pulling means for contacting the surface of the semiconductor melt contained in the quartz crucible with the single crystal seed and pulling the top upward while rotating the seed in a predetermined direction; And a rotation mount for slowly raising the crucible support so that the position of the solid-liquid interface is maintained at a constant level while rotating the crucible support in a direction opposite to the rotational direction of the seed.

According to another aspect of the present invention, there is provided a semiconductor single crystal ingot manufacturing apparatus using the Czochralski method, including a crucible containing a semiconductor melt that is an object of ingot growth; A crucible support coupled to the outer circumferential surface of the crucible to support the shape of the crucible in a high temperature environment; A heater installed to surround sidewalls of the crucible support to provide radiant heat to the semiconductor melted in the crucible; The heater, the crucible support and the crucible is provided with a hollow, the inner side wall of the hollow and the outer peripheral surface of the heater is installed around the heater to prevent the radiant heat emitted from the heater to the outside to the outside, A heat insulation wall having a heat insulation attenuation portion thinner than the other portion; Single crystal ingot pulling means for contacting the surface of the semiconductor melt contained in the quartz crucible with the single crystal seed and pulling the top upward while rotating the seed in a predetermined direction; And a rotation mount for slowly raising the crucible support so that the position of the solid-liquid interface is maintained at a constant level while rotating the crucible support in a direction opposite to the rotational direction of the seed.

Preferably, the radiant heat radiating portion is an opening formed in the insulating wall. More preferably, the insulating wall has a cylindrical shape and the opening is an annular opening formed around the upper end of the insulating wall.

Preferably, the heat insulation wall has a cylindrical shape, and the heat insulation attenuation portion is an annular groove formed in a predetermined width around the upper end of the heat insulation wall.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as being limited to the common or dictionary meanings, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiments of the present invention and do not represent all of the technical idea of the present invention, various equivalents that may be substituted for them at the time of the present application It should be understood that there may be water and variations.

Meanwhile, in the embodiments described below, the semiconductor single crystal ingot manufactured by the semiconductor single crystal ingot manufacturing apparatus is a silicon single crystal ingot. However, the present invention is not limited to the specific kind of semiconductor material constituting the ingot.

2 is a right cross-sectional view showing a configuration of a module for providing a thermal environment according to a preferred embodiment of the present invention.

Referring to FIG. 2, the module for providing a thermal environment according to the present invention is closely coupled with the quartz crucible 100 containing the silicon melt M and the outer circumferential surface of the quartz crucible 100, and thus the quartz crucible 100 in a high temperature environment. Crucible support 110 to support the shape of the, and transfer the radiant heat to the quartz crucible 100 through the crucible support 110 to melt the high-purity polycrystalline silicon contained in the quartz crucible 100 with silicon melt (M) The crucible is coupled to the heater 120 and the lower end of the heat insulation wall 130 and the heat insulation wall 130 which are installed to face the outer circumferential surface of the heater 120 to prevent external loss of radiant heat emitted from the heater 120. It includes a bottom insulation 140 to prevent the radiant heat is lost to the lower portion of the support (110).

The heat insulation wall 130 is preferably a cylindrical wall provided with an internal hollow that can accommodate the heater 120 and the structure provided therein. In addition, an upper end portion of the heat insulation wall 130 is provided with a radiant heat dissipation part 150 for intentionally dissipating radiant heat emitted from the upper end portion of the heater 120. The radiant heat dissipation portion 150 is preferably an annular opening formed along the upper end wall of the thermal insulation wall 130.

When the radiant heat dissipation part 150 is formed in the heat insulation wall 130, the heat distribution profile 160 applied to the quartz crucible 100 by the heater 120 is deformed. That is, as shown in the figure, the radiant heat emitted from the upper end of the heater 120 among the radiant heat emitted by the heater 120 is lost through the radiant heat radiating unit 150 to transfer to the upper portion of the silicon melt (M). The amount of radiant heat generated is reduced. As a result, the temperature of the triple point (G) where the ingot (C), the silicon melt (M) and the external gas environment meet is lowered, and as a result, the power of the heater 120 is increased as the temperature of the triple point (G) is lowered. Can be. When the power of the heater 120 is increased, the temperature of the silicon melt M contained in the quartz crucible 100 is generally increased around the high temperature melt region, thereby increasing the vertical temperature gradient from the solid-liquid interface 170 to the melt side. . As a result, the driving force to move the silicon atoms to the solid-liquid interface 170 is increased, and the convexity of the solid-liquid interface 170 is increased. As a result, the speed of pulling up the defect-free single crystal is improved.

Next, the theoretical background of increasing the defect-free single crystal pulling speed when the vertical temperature gradient from the solid-liquid interface 170 to the melt side is increased will be described.

 The dominant point defects entering the ingot through the solid-liquid interface during silicon single crystal ingot growth are determined by the rate of single crystal pulling and the temperature gradient of the growth system. Since the temperature gradient is a value near the solid-liquid interface, the temperature gradient in the crystal and the temperature gradient in the melt are affected. This can be seen as a heat balance equation according to Equation 1 below, and the temperature gradient of the single crystal and the temperature gradient of the melt have a proportional correlation with each other.

k _S G _S = k _L G _L + L _f V

k _S : Solid (single crystal) heat transfer coefficient, G _S : Solid (single crystal) temperature gradient

k _L : Liquid (melt) heat transfer coefficient, G _L : Liquid (melt) temperature gradient

L _f : latent heat of crystallization, V: growth rate

According to Mr. Voronkov's theory, the defect ingot growth condition satisfies the condition of V / G _s = C. Where V is the growth rate of the ingot, G _s is the vertical temperature gradient on the crystal side at the solid-liquid interface, and C is a constant. According to the above condition, it can be seen that in order to increase the growth rate of the defective ingot, it is necessary to increase the vertical temperature gradient from the solid-liquid interface to the crystal side through an effective ingot cooling mechanism. However, according to the thermal balance equation, the vertical temperature gradient G _s on the crystal side and the vertical temperature gradient G _L on the melt side are proportional to each other at the solid-liquid interface. Therefore, the defect-free ingot growth condition [V / G _s = C] can be expressed as [V / G _L = C '] by converting using the vertical temperature gradient G _L on the melt side. According to this condition, it can be seen that in order to increase the growth rate of the defect-free ingot, it is necessary to increase the vertical temperature gradient G _L from the solid-liquid interface to the melt side. Therefore, as the present invention proposes, the radiant heat dissipation part 150 is formed on the side wall of the heat insulation wall 130 to increase the power of the heater 120 to increase the vertical temperature gradient G _L on the melt side, which is proportional to the constant C '. Therefore, the effect of increasing the pulling speed V of the defect-free ingot occurs. As the melt-side vertical temperature gradient G _L increases, the driving force to move silicon atoms to the solid-liquid interface increases, and the convexity of the solid-liquid interface increases.

The position and width of the radiant heat dissipation part 150 formed on the heat insulation wall 130 may be variously modified. For example, as shown in FIG. 3, when the width of the annular opening constituting the radiant heat dissipation part 150 is increased, the external emission amount of the radiant heat generated at the upper end of the heater 120 may be increased by that amount. Since the power increase amount of the heater 120 is proportional to the external emission amount of the radiant heat, as the width of the environmental opening is increased, the power of the heater 120 may be further increased. In addition, as shown in FIG. 4, when the position of the annular opening is moved downward while the width of the annular opening is maintained, the heat distribution of the heat distribution profile can be moved downward to the bottom side of the quartz crucible 100.

Meanwhile, the present invention does not form an annular opening constituting the radiant heat dissipation part 150 at the upper end of the heat insulation wall 130, and as shown in FIG. 5, the thickness of the side wall at the point close to the upper end of the heater 120 is obtained. By making it thinner, it is also possible to reduce the radiant heat transmitted to the upper part of the silicon melt M by relatively reducing the heat insulation effect. For convenience of description, a portion where the sidewall thickness is reduced than the other sidewall is referred to as an adiabatic attenuation portion 180. As such, when the thermal insulation attenuation portion 180 is formed at the upper end of the thermal insulation wall 130, the radiant heat emitted from the upper end of the heater 120 is discharged to the outside through the relatively thin sidewall portion, so that the silicon melt (M) It is possible to lower the temperature of the triple point (G) by reducing the radiant heat transferred to the top of. Therefore, since the power of the heater 120 can be increased as the temperature of the triple point G is lowered, the temperature of the silicon melt M is centered around the high temperature melt region similarly to the case where the radiant heat radiating unit 150 is formed by the annular opening. Overall increase can increase the vertical temperature gradient from solid-liquid interface 170 to the melt side. When the vertical temperature gradient toward the melt side is increased, the convexity of the solid-liquid interface 170 is increased, thereby increasing the defect-free single crystal ingot growth rate, thereby improving productivity of ingot production.

In addition to the above-described thermal environment providing module, the single crystal ingot manufacturing apparatus according to the present invention gradually rotates the crucible support 110 by the level at which the solid-liquid interface is lowered as the silicon melt M is exhausted while rotating the crucible support 110 in a predetermined direction. A rotating mount for raising and an ingot pulling means for pulling the single crystal ingot C while rotating the seed in a direction opposite to the rotation direction of the crucible support 110 after contacting the single crystal seed with the upper surface of the silicon melt M; , A heat shield installed to surround the silicon ingot C to block heat radiated from the ingot C, and argon (Ar) and neon (Ne) to the grown single crystal ingot (C) and the silicon melt (M). And well-known components provided in the semiconductor single crystal ingot manufacturing apparatus by a general Czochralski method, such as an inert gas supply means which supplies inert gas, such as nitrogen (N), is further included. That will be apparent to those of ordinary skill in the art.

Since the single crystal ingot manufacturing apparatus according to the present invention can reduce the radiant heat transmitted to the upper portion of the silicon melt (M) to lower the temperature of the triple point (G), the power of the heater 120 as the temperature of the triple point (G) is lowered By increasing the overall temperature of the silicon melt (M) around the high temperature melt region to increase the vertical temperature gradient at the solid-liquid interface 170. As a result, the convexity of the solid-liquid interface is increased to increase the pulling speed of the defect-free single crystal ingot, thereby improving the ingot production productivity.

<Simulation Result>

Hereinafter, as shown in FIG. 6, in the case where a thermal environment is formed using a conventional heat insulating wall having no radiant heat radiating portion or heat insulating attenuating portion formed on the top of the heat insulating wall (comparative example), and radiating heat radiating having an annular opening at the upper end thereof. In the case where a thermal environment is formed using an additional insulating wall (example), the results of simulations of the vertical temperature gradient from the solid-liquid interface to the melt side and the shape of the solid-liquid interface will be described. In the simulation, the rotation speed of the seed was set to 17 rpm, the rotation speed of the quartz crucible to 0.5 rpm, the diameter of the ingot to 206 mm, and the pulling speed of the ingot to 0.65-0.7 mm / min. In the case of the embodiment, since the temperature of the triple point is lower than that of the comparative example, it is assumed that the power of the heater is increased in order to match the temperature of the triple point with the comparative example.

7 is a graph showing a simulation of the vertical temperature gradient from the solid-liquid interface to the melt side. Referring to the drawings, it can be seen that the vertical temperature gradient toward the melt side increases by up to 10% in the case of the example compared to the comparative example.

8 is a graph showing a simulation of the shape of the interface when growing a silicon single crystal ingot in each thermal environment according to Comparative Examples and Examples. Referring to the drawings, it can be seen that when the silicon single crystal ingot is grown in the thermal environment according to the embodiment rather than the thermal environment according to the comparative example, the convexity of the solid-liquid interface can be increased. This is because the vertical temperature gradient toward the melt side is increased and the driving force to move silicon atoms toward the solid-liquid interface side is increased.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

 According to the present invention, by radiating the radiant heat emitted from the upper end of the heater to the outside it is possible to reduce the amount of radiant heat transferred to the top of the silicon melt. Then, since the temperature of the triple point can be lowered, the power of the heater can be increased as the temperature of the triple point is lowered. As the power of the heater is increased, the temperature of the silicon melt generally rises around the hot melt region and the vertical temperature gradient from the solid-liquid interface to the melt side is increased, so that the driving force to move the silicon atoms from the solid-liquid interface is increased, so that the convexity of the solid-liquid interface is increased. And as a result, the productivity of ingot production can be improved by increasing the rate of defect-free single crystal ingot growth.

Claims (16)

In the thermal environment providing module used for the defect-free single crystal ingot manufacturing apparatus by Czochralski method, A crucible containing a semiconductor melt which is the target of ingot growth; A heater installed to surround sidewalls of the crucible to provide radiant heat to the semiconductor melted in the crucible; And It is provided with a hollow for receiving the heater and the crucible, and is provided around the heater so that the inner side wall and the outer peripheral surface of the heater facing each other, and includes a heat insulation wall to prevent the radiant heat emitted from the heater to the outside, The upper end of the heat insulation wall is a thermal environment providing module, characterized in that provided with a radiant heat discharge unit for radiating the radiant heat emitted from the top of the heater to the outside. The method of claim 1, And the radiant heat radiating part is an opening formed in the heat insulation wall. The method of claim 2, And wherein said insulating wall has a cylindrical shape and said opening is an annular opening formed around an upper end of said insulating wall. The method of claim 1, The thermal environment providing module, characterized in that it further comprises a bottom insulation coupled to the lower end of the insulation wall. The method of claim 1, Between the crucible and the heater, the thermal environment providing module further comprises a crucible support coupled to the outer peripheral surface of the crucible to support the shape of the crucible in a high temperature environment. In the thermal environment providing module used for the defect-free single crystal ingot manufacturing apparatus by Czochralski method, A crucible containing a semiconductor melt which is the target of ingot growth; A heater installed to surround sidewalls of the crucible to provide radiant heat to the semiconductor melted in the crucible; And It is provided with a hollow for receiving the heater and the crucible, and is provided around the heater so that the inner side wall and the outer peripheral surface of the heater facing each other, and includes a heat insulation wall to prevent the radiant heat emitted from the heater to the outside, The thermal environment providing module, characterized in that the upper end of the heat insulation wall is provided with a heat insulation attenuation portion thinner than the other wall portion. The method of claim 6, The thermal insulation wall has a cylindrical shape, wherein the thermal insulation attenuation portion is an annular groove formed in a predetermined width along the circumference of the upper end of the thermal insulation wall, module providing thermal environment. The method of claim 6, The thermal environment providing module, characterized in that it further comprises a bottom insulation coupled to the lower end of the insulation wall. The method of claim 6, Between the crucible and the heater, the thermal environment providing module further comprises a crucible support coupled to the outer peripheral surface of the crucible to support the shape of the crucible in a high temperature environment. A crucible containing a semiconductor melt which is the target of ingot growth; A crucible support coupled to the outer circumferential surface of the crucible to support the shape of the crucible in a high temperature environment; A heater installed to surround sidewalls of the crucible support to provide radiant heat to the semiconductor melted in the crucible; The crucible, the crucible support and the hollow to accommodate the heater is provided, and is installed around the heater so that the inner side wall of the hollow and the outer peripheral surface of the heater to prevent the radiant heat emitted from the heater to the outside, the upper portion An insulated wall having a radiant heat radiating part for radiating radiant heat emitted from an upper portion of the heater to the outside; Single crystal ingot pulling means for contacting the surface of the semiconductor melt contained in the quartz crucible with the single crystal seed and pulling the top upward while rotating the seed in a predetermined direction; And Single crystal ingot manufacturing apparatus according to Czochralski method comprising a; rotating the crucible support to gradually raise the crucible support so that the position of the solid-liquid interface is maintained at a constant level while rotating the crucible support in the direction opposite to the rotation direction of the seed; . The method of claim 10, The apparatus for producing a single crystal ingot by the Czochralski method, wherein the radiant heat radiating portion is an opening formed in the heat insulating wall. The method of claim 11, The heat insulation wall has a cylindrical shape, and the opening is an annular opening formed around the upper end of the heat insulation wall. The method of claim 10, Single crystal ingot production apparatus according to Czochralski method, further comprising a bottom heat insulating material bonded to the lower end of the heat insulating wall. A crucible containing a semiconductor melt which is the target of ingot growth; A crucible support coupled to the outer circumferential surface of the crucible to support the shape of the crucible in a high temperature environment; A heater installed to surround sidewalls of the crucible support to provide radiant heat to the semiconductor melted in the crucible; The heater, the crucible support and the crucible is provided with a hollow, the inner side wall of the hollow and the outer peripheral surface of the heater is installed around the heater to prevent the radiant heat emitted from the heater to the outside to the outside, A heat insulation wall having a heat insulation attenuation portion thinner than the other portion; Single crystal ingot pulling means for contacting the surface of the semiconductor melt contained in the quartz crucible with the single crystal seed and pulling the top upward while rotating the seed in a predetermined direction; And Single crystal ingot manufacturing apparatus according to Czochralski method comprising a; rotating the crucible support to gradually raise the crucible support so that the position of the solid-liquid interface is maintained at a constant level while rotating the crucible support in the direction opposite to the rotation direction of the seed; . The method of claim 14, The heat insulation wall has a cylindrical shape, wherein the heat insulation attenuation portion is an annular groove formed in a predetermined width along the circumference of the upper end of the heat insulation wall. The method of claim 14, Single crystal ingot production apparatus according to Czochralski method, further comprising a bottom heat insulating material bonded to the lower end of the heat insulating wall.

Images