KR20080054777A - 박막트랜지스터 및 그의 제조방법 - Google Patents
박막트랜지스터 및 그의 제조방법 Download PDFInfo
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- KR20080054777A KR20080054777A KR1020060127329A KR20060127329A KR20080054777A KR 20080054777 A KR20080054777 A KR 20080054777A KR 1020060127329 A KR1020060127329 A KR 1020060127329A KR 20060127329 A KR20060127329 A KR 20060127329A KR 20080054777 A KR20080054777 A KR 20080054777A
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- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
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- 230000006698 induction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
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- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
불순물 이온도즈 (ions/㎠) | 문턱전압 (V) | 구동전압범위 (V) | S 팩터 (V/dec) | DIBL (V) | |
비교예1 | 0 | -3.89 | -2.70 | 0.62 | -0.64 |
실시예1 | 5×1011 | -2.88 | -2.39 | 0.51 | -0.48 |
실시예2 | 8×1011 | -2.29 | -2.45 | 0.49 | -0.51 |
실시예3 | 1×1012 | -1.71 | -2.49 | 0.49 | -0.54 |
실시예4 | 2×1012 | 0.49 | -2.89 | 0.60 | -0.79 |
문턱전압 (Vth) | 구동전압범위 (V) | |
비교예1 | -3.89 | -2.70 |
실시예1 | -2.29 | -2.45 |
실시예2 | -1.71 | -2.49 |
비교예2 | -3.5 | 1.8 |
비교예3 | -1.9 | 2.7 |
비교예4 | -2.09 | -1.13 |
비교예5 | -1.69 | -1.17 |
Claims (10)
- 기판;상기 기판 상에 위치하는 버퍼층;상기 버퍼층 상에 위치하며, 불순물을 포함하는 채널영역 및 소스/드레인 영역을 포함하며, 1013atoms/㎠이하의 잔류 금속을 포함하는 반도체층;상기 반도체층 상에 위치하는 게이트 절연막;상기 게이트 절연막 상에 위치하는 게이트 전극;상기 게이트 전극 상에 위치하는 층간 절연막; 및상기 층간 절연막 상에 위치하며 상기 반도체층과 접하는 소스/드레인 전극을 포함하는 것을 특징으로 하는 박막트랜지스터.
- 제 1 항에 있어서,상기 잔류 금속은 109 내지 1013atoms/㎠인 것을 특징으로 하는 박막트랜지스터.
- 제 1 항에 있어서,상기 채널영역의 불순물은 1×1010ions/㎠ 내지 2×1012ions/㎠의 농도인 것을 특징으로 하는 박막트랜지스터.
- 기판을 제공하고,상기 기판 상에 비정질 실리콘층을 형성하고,상기 비정질 실리콘층 상에 캡핑층을 형성하고,상기 캡핑층 상에 금속 촉매를 증착하고,상기 기판을 열처리하여 비정질 실리콘층을 다결정 실리콘층으로 결정화하고,상기 캡핑층을 제거하고,상기 다결정 실리콘층을 패터닝하여 반도체층을 형성하고,상기 반도체층 상에 게이트 절연막을 형성하고,상기 게이트 절연막을 포함한 반도체층에 제 1불순물 이온을 주입하고,상기 반도체층 상에 게이트 전극을 형성하고,상기 게이트 전극을 마스크로 하여 소오스/드레인 전극에 제 2불순물 이온을 주입하여 소오스/드레인 영역을 형성함과 동시에 소오스/드레인 영역들 사이에 채널영역이 형성되게 하는 것을 포함하는 박막트랜지스터의 제조방법.
- 제 4 항에 있어서,상기 결정화는 SGS(Super Grain Silicon) 결정화법을 수행하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 4 항에 있어서,상기 제 1불순물 이온의 도즈는 1×1010ions/㎠ 내지 2×1012ions/㎠미만의 도즈로 주입하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 4 항에 있어서,상기 열처리는 제 1 열처리 단계와 제 2 열처리 단계로 이루어지는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 7 항에 있어서,상기 제 1 열처리 단계는 200℃ 내지 800℃의 온도 범위에서 수행하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 8 항에 있어서,상기 제 2 열처리 단계는 400℃ 내지 1300℃의 온도 범위에서 수행하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 4 항에 있어서,상기 제 2불순물 이온의 도즈는 1×1018 내지 1×1020/㎤으로 주입하여 형성하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101049802B1 (ko) * | 2009-11-20 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터, 그를 구비하는 유기전계발광표시장치 및 그들의 제조방법 |
KR20120020941A (ko) * | 2010-08-31 | 2012-03-08 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치 |
KR20190042988A (ko) * | 2017-10-17 | 2019-04-25 | 한국과학기술연구원 | 박막형 트랜지스터 채널 및 이를 이용한 박막형 트랜지스터 |
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KR101009432B1 (ko) | 2009-06-30 | 2011-01-19 | 주식회사 엔씰텍 | 박막트랜지스터 및 그의 제조방법 |
KR101737034B1 (ko) | 2015-08-11 | 2017-05-17 | 한국항공대학교산학협력단 | 박막트랜지스터 제조 방법 및 박막트랜지스터 |
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KR100666564B1 (ko) * | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
KR100721555B1 (ko) * | 2004-08-13 | 2007-05-23 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
KR100731732B1 (ko) * | 2004-11-23 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법과 이를 이용한 평판 표시장치 |
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KR101049802B1 (ko) * | 2009-11-20 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터, 그를 구비하는 유기전계발광표시장치 및 그들의 제조방법 |
US9070717B2 (en) | 2009-11-20 | 2015-06-30 | Samsung Display Co., Ltd. | Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same |
US9576797B2 (en) | 2009-11-20 | 2017-02-21 | Samsung Display Co., Ltd. | Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same |
KR20120020941A (ko) * | 2010-08-31 | 2012-03-08 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치 |
KR20190042988A (ko) * | 2017-10-17 | 2019-04-25 | 한국과학기술연구원 | 박막형 트랜지스터 채널 및 이를 이용한 박막형 트랜지스터 |
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