KR20080018606A - Transrflective thin film trasister - Google Patents

Transrflective thin film trasister Download PDF

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Publication number
KR20080018606A
KR20080018606A KR1020060080995A KR20060080995A KR20080018606A KR 20080018606 A KR20080018606 A KR 20080018606A KR 1020060080995 A KR1020060080995 A KR 1020060080995A KR 20060080995 A KR20060080995 A KR 20060080995A KR 20080018606 A KR20080018606 A KR 20080018606A
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KR
South Korea
Prior art keywords
thin film
data line
electrode
reflective
film transistor
Prior art date
Application number
KR1020060080995A
Other languages
Korean (ko)
Inventor
김정윤
김현영
나형돈
정관욱
태승규
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020060080995A priority Critical patent/KR20080018606A/en
Priority claimed from US11/844,873 external-priority patent/US20080049176A1/en
Publication of KR20080018606A publication Critical patent/KR20080018606A/en

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    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

Abstract

The present invention relates to a semi-transmissive thin film transistor substrate capable of removing an afterimage.
A semi-transmissive thin film transistor substrate according to the present invention includes a thin film transistor connected to a gate line and a data line; A pixel electrode connected to the thin film transistor and formed in a pixel region; The reflective electrode is formed in the reflective region included in the pixel region, and the separation distance between the driving electrodes of any one of the reflective electrodes and the pixel electrodes facing each other with the data line therebetween is 3.5 μm to 6 μm. It is characterized by.

Description

Transflective Thin Film Transistor Board {TRANSRFLECTIVE THIN FILM TRASISTER}

1 is a plan view illustrating a liquid crystal display panel according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

3A and 3B are diagrams for describing an electric field effect according to a distance between reflective electrodes included in two reflective regions facing each other with a data line interposed therebetween and reflective electrodes according to the present invention.

<Brief description of symbols for the main parts of the drawings>

20 color filter substrate 30 thin film transistor substrate

40: liquid crystal 100,110: substrate

160: gate electrode 250 260: semiconductor layer

300: data line 310: drain electrode

320: source electrode 330: light blocking film

400: pixel electrode 420: reflective electrode

450: contact hole 500: black matrix

550: color filter 650: common electrode

The present invention relates to a transflective thin film transistor substrate, and more particularly, to a transflective thin film transistor substrate capable of removing an afterimage.

A liquid crystal display (LCD) displays an image by allowing each of the liquid crystal cells arranged in a matrix form on the liquid crystal panel to adjust light transmittance according to a video signal.

The transflective liquid crystal display of the liquid crystal display has the advantages of transmissive and reflective. The transflective liquid crystal display operates in a reflection mode when the external light is sufficient, and in a transmission mode using the backlight unit when the external light is insufficient. Therefore, the transflective liquid crystal display device can reduce power consumption than the transmissive liquid crystal display device and is not subject to external light, unlike the reflective liquid crystal display device.

The transflective liquid crystal display includes a reflection area for implementing an image using external light and a transmission area for implementing an image using internal light (backlight unit). The external light incident to the reflective region is reflected by the reflective electrode via the liquid crystal layer and emitted to the outside via the liquid crystal layer again. In addition, the internal light of the backlight unit incident to the transmission region passes through the liquid crystal layer and is emitted to the outside. Electric fields between the reflective electrodes formed of the conductive metal materials in the adjacent reflective regions are formed to affect the liquid crystal layer to generate an afterimage.

Accordingly, the technical problem to be achieved by the present invention is to provide a semi-transmissive thin film transistor substrate capable of removing an afterimage.

In order to achieve the above technical problem, a semi-transmissive thin film transistor substrate according to the present invention includes a thin film transistor connected to the gate line and the data line; A pixel electrode connected to the thin film transistor and formed in a pixel region; The reflective electrode is formed in the reflective region included in the pixel region, and the separation distance between the driving electrodes of any one of the reflective electrodes and the pixel electrodes facing each other with the data line therebetween is 3.5 μm to 6 μm. It is characterized by.

The pixel electrode may be formed on the reflective electrode or beneath the reflective electrode.

The light blocking layer further overlaps the data line and is wider than the data line.

On the other hand, the light blocking film is characterized in that formed in a width of 12.5㎛ ~ 15.5㎛.

Technical objects and advantages of the present invention in addition to the above technical problem will be apparent from the description of the preferred embodiment of the present invention with reference to the accompanying drawings.

1 is a plan view illustrating a liquid crystal display panel according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

1 and 2, the liquid crystal display panel includes a liquid crystal 40 between the thin film transistor substrate 20, the color filter substrate 30, and the thin film transistor substrate 20 and the color filter substrate 30. do.

The color filter substrate 30 includes a black matrix 500 to prevent light leakage, a color filter 550 to implement color, a planarization layer 110 to compensate for the step difference caused by the color filter 550, and a pixel electrode 400. The color filter array including the common electrode 650 forming a vertical electric field is formed on the upper substrate 110.

The black matrix 500 divides the upper substrate 110 into a plurality of pixel areas in which the color filter 550 is to be formed, and prevents light interference and external light reflection between adjacent pixel areas. To this end, the black matrix 500 is formed on the upper substrate 110 to overlap at least one of the data line 300, the gate line 150, and the thin film transistor 70 formed on the lower substrate 100. .

The color filter 550 is formed for each of red (R), green (G), and blue (B) in the pixel area provided by the black matrix 500 to implement red (R), green (G), and blue (B). do.

The common electrode 650 is formed on the upper substrate 110 to control the movement of the liquid crystal using the supplied common voltage.

The thin film transistor substrate 20 may include a thin film transistor 70 connected to the gate line 150 and a data line 300, a pixel electrode 400 connected to the thin film transistor 70 and formed in the pixel area, and A reflective electrode 420 formed in the reflective region RA and a storage capacitor Cst connected to the pixel electrode 400 are provided.

The thin film transistor 70 selectively supplies the data signal from the data line 300 to the pixel electrode 400 in response to the gate signal from the gate line 150. To this end, the thin film transistor 70 may include a gate electrode 160 connected to the gate line 150, a source electrode 310 connected to the data line 300, and a contact hole 120 passing through the passivation layer 350. An active layer that forms a channel between the source electrode 310 and the drain electrode 320 while overlapping the drain electrode 320, the gate electrode 160, and the gate insulating layer 200 interposed between the pixel electrode 400 and the pixel electrode 400. And an ohmic contact layer 260 for ohmic contact between the active layer 250, the source electrode 310, and the drain electrode 320.

The storage capacitor Cst is formed by overlapping the storage lower electrode 432 formed on the substrate 100 with the drain electrode 310 serving as the storage upper electrode with the gate insulating layer 200 interposed therebetween. The storage capacitor Cst serves to prevent voltage variation of the pixel electrode 400.

The pixel electrode 400 is positioned in the pixel area provided at the intersection of the data line 300 and the gate line 150 and is made of a transparent conductive material having high transmittance. The pixel electrode 400 is formed on the passivation layer 350 applied to the entire surface of the lower substrate 100, and is electrically connected to the drain electrode 320 through the contact hole 120. The pixel electrode 400 generates a potential difference from the common electrode 650 by the data signal supplied through the thin film transistor 70. This potential difference causes the liquid crystal to rotate, and the light transmittance is determined according to the degree of rotation of the liquid crystal in each of the reflective region RA and the transmission region TA.

The reflective electrode 420 reflects external light incident through the color filter substrate 30 toward the color filter substrate 30. The region in which the reflective electrode 420 is formed becomes the reflective region RA among the pixel regions, and the region in which the reflective electrode 420 is not formed becomes the transmissive region TA of each pixel region. As a result, the external light incident on the reflective region RA is reflected by the reflective electrode 420 via the liquid crystal layer and emitted to the outside via the liquid crystal layer. In addition, the internal light of the backlight unit incident to the transmission area TA passes through the liquid crystal layer and is emitted to the outside. The reflective electrode 420 is formed of a conductive metal including aluminum (Al), aluminum alloy, molybdenum (Mo), or the like. The reflective electrode 420 is formed in a multilayer structure formed of a conductive metal on the pixel electrode 400. The reflective electrode 420 is also formed in a multilayer structure formed under the pixel electrode 400. Here, Table 1 shows the separation distances between the reflective electrodes 420 facing each other with the data line 300 interposed therebetween. Meanwhile, the light blocking layer 330 is formed under the data line 300 to shield the afterimage area and the light leakage area when the light blocking layer 330 faces each other with the data line 300 interposed therebetween. The light blocking layer 330 overlaps the data line 300 under the data line 300 and is wider than the data line 300. Here, the light blocking film 330 has a width of 12.5 μm to 15.5 μm, for example.

Instant afterimage generation area Distance between reflective electrodes (based on data line) Light spring area Light shield First embodiment 5.0㎛ 3.5 ㎛ 4.0 μm 12.5.㎛ Second embodiment 4.0 μm 4.5㎛ 4.0 μm 12.5.㎛ Third embodiment 3.0 μm 5.5㎛ 4.0 μm 12.5.㎛ Fourth embodiment 4.0 μm 3.5 ㎛ 4.0 μm 12.5.㎛ Fifth Embodiment 4.0 μm 4.5㎛ 5.5㎛ 14.0㎛ Sixth embodiment 4.0 μm 6.0 μm 5.5㎛ 15.5㎛

3A and 3B are diagrams for describing an electric field effect according to a distance between reflective electrodes included in two reflective regions facing each other with a data line interposed therebetween and reflective electrodes according to the present invention.

 3A and 3B are graphs illustrating a liquid crystal array direction in which a black data voltage is applied after a white data voltage is applied. Here, when the white data signal is applied to the pixel electrode 400 during the white driving, a voltage difference is generated between the common electrode 650 and the common voltage, so that the liquid crystal molecules 40 are disposed horizontally to implement white. When the black data signal is applied to the pixel electrode 400 during the black driving, the liquid crystal molecules 40 are vertically disposed since the common electrode 650 and the common voltage have no voltage difference, thereby implementing black. Referring to FIG. 3A, when the distance d between the reflective electrodes 420 facing each other with the data line 300 interposed therebetween is 3 μm, the right pixel region RRA is black in a white implementation. When converted to the liquid crystal molecules 40 should be rotated at a predetermined angle from the horizontal direction to the vertical direction. However, since the right pixel electrode RRA is influenced by the electric field by the driving voltage supplied to the left pixel electrode LRA based on the data line 300, the right pixel electrode RRA is not immediately converted to the vertical direction, and thus an afterimage occurs. Referring to FIG. 3B, when the distance d between the reflective electrodes 420 facing each other across the data line 300 is, for example, 6 μm, the right pixel region RRA is converted from a white implementation to a black implementation. If the liquid crystal molecules 40 rotate at a predetermined angle from the horizontal direction to the vertical direction, as the distance d between the reflective electrodes 420 increases, the electric field is less affected. It is switched to prevent afterimages. Herein, the distance d between the reflective electrodes 420 may be, for example, 3.5 μm to 6 μm.

As described above, the transflective thin film transistor substrate according to the present invention widens the separation distance between the reflective electrodes facing each other with the data line therebetween. Accordingly, an afterimage may be prevented by preventing an electric field from being generated between adjacent reflective electrodes based on the data line.

Although the detailed description of the present invention described above has been described with reference to a preferred embodiment of the present invention, those skilled in the art or those skilled in the art, those skilled in the art, described in the claims below It will be understood that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims (4)

  1. A thin film transistor connected to the gate line and the data line;
    A pixel electrode connected to the thin film transistor and formed in a pixel region;
    A reflection electrode formed in the reflection area included in the pixel area;
    The separation distance between the driving electrodes of any one of the reflective electrodes and the pixel electrodes facing each other with the data line therebetween is 3.5 μm to 6 μm.
  2. The method of claim 1,
    The pixel electrode is formed on the reflective electrode or formed below the reflective electrode.
  3. The method of claim 1,
    And a light blocking layer overlapping the data line and wider than the data line, beneath the data line.
  4. The method of claim 3,
    The light blocking film is a semi-transmissive thin film transistor substrate, characterized in that formed in a width of 12.5㎛ ~ 15.5㎛.
KR1020060080995A 2006-08-25 2006-08-25 Transrflective thin film trasister KR20080018606A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020060080995A KR20080018606A (en) 2006-08-25 2006-08-25 Transrflective thin film trasister

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060080995A KR20080018606A (en) 2006-08-25 2006-08-25 Transrflective thin film trasister
US11/844,873 US20080049176A1 (en) 2006-08-25 2007-08-24 Thin film transistor-array substrate, transflective liquid crystal display device with the same, and method for manufacturing the same

Publications (1)

Publication Number Publication Date
KR20080018606A true KR20080018606A (en) 2008-02-28

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Country Status (1)

Country Link
KR (1) KR20080018606A (en)

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