KR20060120970A - Plasma processing apparatus having external winding coil for large area processing - Google Patents

Abstract

A plasma processing apparatus having an external winding coil for large area processing is provided to increase yield by plasma-processing substrates at two processing room of a chamber at once. A process chamber(110) has an even number of through-holes on a left and right wall. A magnetic core(120) is inserted into the process chamber through the through-hole, and crosses the inside of the process chamber from the left to the right by forming a rectangular shape. A winding coil(130) is not inserted into the through-hole, and is installed at a part of the magnetic core revealed out of the process chamber, and induces an electric field generating plasma by ionizing a reaction gas injected into the process chamber.

Description

Plasma processing apparatus having external winding coil for large area processing

In order to more fully understand the drawings used in the detailed description of the invention, a brief description of each drawing is provided.

1A and 1B are a perspective view and a front sectional view showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.

2A and 2B are a perspective view and a front sectional view showing a modification of Embodiment 1 shown in FIGS. 1A and 1B.

3A and 3B are a perspective view and a front sectional view showing an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.

4 is a perspective view illustrating a modification of Embodiment 2 shown in FIGS. 3A and 3B.

5a to 5c are perspective views and a front sectional view for explaining the structure of the magnetic core.

6 is a diagram illustrating a connection relationship between a winding coil and a high frequency power supply unit.

* Description of the symbols for the main parts of the drawings *

110, 210a, 210b: process chamber 111, 211a, 221b: gas inlet

112, 212a, 212b: exhaust port 113, 213a, 213b: slit valve

120, 220: magnetic core 121: gap

122: tube 130, 230: winding coil

140, 240a, 240b: susceptor 150: electric field

160: high frequency supply unit W: substrate to be processed

The present invention relates to a plasma processing apparatus, and more particularly, to an inductively coupled plasma processing apparatus having an external winding coil for processing a large area capable of generating high density plasma having high uniformity.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Currently, plasma sources are widely used in various fields. Manufacturing of semiconductor devices for producing semiconductor chips is used, for example, in cleaning, etching, deposition, and the like.

ICP (inductive coupled plasma) or TCP (transformer coupled plasma) generation technology has been widely studied in this application field. Capacitive Coupled Plasma (CCP) method using an electrode generates impurities from the electrode in contact with the plasma, which adversely affects the final result. However, the RF ICP scheme provides the advantage of not having an electrode in contact with the plasma in providing electromagnetic energy for plasma generation.

Recently, in the technical field using plasma, a plasma source having a wider volume, uniformity, and higher density is required as the substrate to be processed is enlarged. In the field of semiconductor devices, a plasma source capable of effectively processing a large size wafer is required, and a plasma source capable of processing a large size liquid crystal display panel is also required in the production of a liquid crystal display panel.

Accordingly, the present invention is to provide a plasma processing apparatus having a plasma source capable of processing a large area as the size of the substrate to be processed increases, achieving uniformity and high density at the time of large area, and increasing the yield. have.

One aspect of the present invention for achieving the above technical problem relates to a plasma processing apparatus.

In the plasma processing apparatus of the present invention, the process chamber is formed by drilling an even number of through-holes in a direction facing each other on the left and right side walls, and inserted into the process chamber through the through-holes to cross the inside of the process chamber from side to side. Ionizing a magnetic core forming a square pipe shape through an integrated or fastening member, and a reaction gas installed into a portion of the magnetic core which is not inserted into the through hole and exposed to the outside of the process chamber and is injected into the process chamber. And a winding coil to induce an electric field to generate a plasma.

Preferably, a tube is installed at a portion of the magnetic core inserted into the process chamber through the through-hole so as to surround an outer circumferential surface, and a gap is formed between the inner circumferential surface of the tube and the outer circumferential surface of the magnetic core. Do. The through hole is preferably sealed by the elasticity of the tube.

Preferably, the substrate further includes a susceptor installed on an inner wall of the process chamber in which the through hole is not formed, and susceptors are mounted by vacuum adsorption of the substrate to be processed. To the top surface of the susceptor in a direction.

Preferably, further comprising a high frequency power supply for supplying a high frequency power to the susceptor in order to promote the ionization of the reaction gas to control the plasma generation.

Preferably, the side wall of the process chamber in which the susceptor is installed is provided with an exhaust port for discharging the unreacted reaction gas of the reaction gas, the exhaust pipe in communication with the exhaust port to maintain the interior of the process chamber in a vacuum state A vacuum pump for sucking air in the process chamber is further installed.

Preferably, one side portion of the process chamber in which the through-holes are drilled is provided with slit valves, one each to the left and right, with the through-holes interposed therebetween in order to access the substrate to be processed.

Preferably, a gas injection hole for injecting the reaction gas is provided in the upper portion of the process chamber.

Preferably, further comprising a high frequency power supply for supplying a high frequency power to the winding coil.

Preferably, the present invention according to another aspect for achieving the above object is a first process chamber in which an even number of first through holes are perforated on one side wall, and an even number of second through holes in a direction facing the first through holes. A magnetic core having a rectangular pipe shape through an integral or fastening member inserted into and fastened to the second process chamber, the first and second through-holes intersecting the first and second process chambers, Induction comprising a winding coil installed in a portion of the magnetic core exposed between the first and second process chambers to induce an electric field to ionize the reaction gas injected into the first and second process chambers, respectively, to generate a plasma. Provided is a combined plasma processing apparatus.

Preferably, a tube is installed to surround an outer circumferential surface at portions inserted into the first and second process chambers through the first and second through-holes of the magnetic core, respectively, and the inner circumferential surface of the tube and the outer circumferential surface of the magnetic core It is desirable to form a gap in the liver. The first and second through holes are sealed by the elasticity of the tube.

Preferably, the substrate further includes a first susceptor installed on an inner wall of the first process chamber in a direction facing the first through hole, the first susceptor for vacuum-suctioning the substrate to be processed. 1 is mounted on the upper surface of the first susceptor in a direction parallel to the direction in which the through-hole is formed.

Preferably, the second susceptor is installed on the inner wall of the second process chamber in a direction facing the second through hole, and further includes a second susceptor for vacuum-adsorbing the substrate to be processed. 2 is seated on the upper surface of the second susceptor in a direction parallel to the direction in which the through hole is formed.

Preferably, the method further includes a high frequency power supply for supplying high frequency power to the first and second susceptors in order to promote ionization of the reaction gas to control plasma generation.

Preferably, a side wall of the first process chamber in which the first susceptor is installed is provided with a first exhaust port for discharging unreacted reaction gas in the reaction gas, and a side wall of the second process chamber in which the second susceptor is installed. The second exhaust port for discharging the unreacted reaction gas of the reaction gas is installed, the first and second exhaust pipes communicated with the first and second exhaust ports, respectively, the interior of the first and second process chambers First and second vacuum pumps are further provided to suck air in the first and second process chambers to maintain the vacuum state.

Preferably, a slit valve is installed at one side of each of the first and second process chambers in order to enter and exit the substrate.

Preferably, gas injection holes for injecting the reaction gas are provided at upper portions of the first and second process chambers, respectively.

Preferably, further comprising a high frequency power supply for supplying a high frequency power to the winding coil.

DETAILED DESCRIPTION In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the embodiments of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the accompanying drawings. In understanding the drawings, it should be noted that like parts are intended to be represented by the same reference numerals as much as possible. And detailed description of known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention is omitted.

Example 1

Hereinafter, with reference to the accompanying drawings illustrating a preferred embodiment of the present invention, the plasma processing apparatus of the present invention will be described in detail.

1A and 1B are diagrams for explaining a plasma processing apparatus according to a first embodiment of the present invention. FIG. 1A is a perspective view and FIG. 1B is a front sectional view.

1A and 1B, a plasma processing apparatus according to a first exemplary embodiment of the present invention includes a process chamber 110 in which an even number of through holes (not shown) are punched in opposite directions to the left and right side walls, respectively. And a magnetic core 120 inserted into the process chamber 110 through the through-hole to form a square pipe shape through an integrated or fastening member (not shown) to cross the inside of the process chamber 110 from side to side. In addition, the plurality of windings are installed in a portion of the magnetic core 120 exposed to the outside of the process chamber 110 without being inserted into the through hole, thereby ionizing the reaction gas injected into the process chamber 110 to generate plasma. Winding coil 130 for inducing an electric field to be generated.

The process chamber 110 is provided with a susceptor 140 on which a wafer or a glass substrate is vacuum-adsorbed to the substrate to be processed (W). The susceptors 140 are installed on inner walls where the through holes are not formed. The substrate W is mounted on the upper surface of the susceptor 14 in a direction parallel to the direction in which the even number of the through holes is formed. In addition, a gas injection hole 111 for injecting the reaction gas into the chamber is formed in the upper portion of the process chamber 110, and the unreacted reaction gas in the reaction gas is discharged to the outside on the sidewall on which the susceptor 140 is formed. Exhaust ports 112 are provided respectively. In addition, a slit valve 113 for entering and exiting the substrate W to be disposed on the left and right sides of the through hole is provided.

The susceptor 140 may be supplied with a high frequency power from a high frequency (RF) power supply (not shown) to promote ionization of the reaction gas to control plasma generation. Exhaust port 112 is installed to face each other, the exhaust pipe (not shown) in communication with the exhaust port 112 is installed with a vacuum pump (not shown), the interior of the process chamber 110 through the vacuum pump in a vacuum state In the meantime, the unreacted reaction gas is smoothly discharged to the outside.

On the other hand, the process chamber 110 is cast in the form of dividing along the cutting line shown in Figure 1a, and may be formed by mutually fastening the divided members through a predetermined fastening member (not shown), which is a magnetic This is to stably insert and fasten the core 120 into the through hole of the process chamber 110. For example, the magnetic core 120 may be formed in one piece or through a fastening member. In the case of forming a single piece, the magnetic core 120 is inserted into a through hole of a divided member, and then the member of the divided process chamber is fastened. The magnetic core 120 is stably fastened to the process chamber 110 by fastening in opposite directions using the member.

Magnetic core 120 has a cylindrical shape as shown in Figure 1b is filled with no empty space therein, the outer peripheral surface of the portion inserted into the process chamber 110 through the through hole is a quartz tube (tube, 122) ) Is inserted into. In this case, a gap 121 having a predetermined size is formed between the outer circumferential surface of the magnetic core 120 and the inner circumferential surface of the tube 122. The quartz tube 122 is also located in the through hole, the through hole is sealed by the elasticity of the tube 122. As a result, the process chamber 110 is maintained in a vacuum state.

Meanwhile, in addition to the cylindrical shape, the magnetic core 120 may be formed in a rectangular structure as shown in FIGS. 5A to 5C. In this case, the tube 122 may also have a process chamber (M) of the magnetic core 120. 110 is installed to surround the outer peripheral surface of the magnetic core 120 inserted into the gap, the gap 121 is formed to have a predetermined size between them.

As shown in FIG. 6, the winding coil 130 is wound around the magnetic core 120 in the process chamber 110 in a plurality of times. The high frequency power supply RF is applied to the winding coil 130 from the high frequency power supply unit 160. The high frequency power RF causes the high frequency current to flow in the winding coil 130, thereby winding the coil 130. ), A magnetic field is generated, and an electric field is induced around the magnetic core 120 by the magnetic field 150.

Referring to the operating principle of the plasma processing apparatus according to the first embodiment having such a structure as follows.

First, when a high frequency power is applied to the winding coil 130 wound around the magnetic core 120, a magnetic field is generated by the winding coil 130, and the magnetic core may be changed by the change of the magnetic field over time. An electric field is induced inside the process chamber 110 around the 120. At the same time, when the reaction gas is injected into the process chamber 110 through the gas injection hole 111, the electrons accelerated by the induced electric field ionize the reaction gas through the collision process to generate a plasma inside the process chamber 110. do. The generated plasma processes the wafer W as desired through a chemical reaction process with the surface of the substrate W.

(Modification 1)

2A and 2B show Modification Example 1 of Preferred Embodiment 1 of the present invention, FIG. 2A is a perspective view, and FIG. 2B is a front sectional view. Here, among the reference numerals shown in FIGS. 2A and 2B, the same reference numerals as those shown in FIGS. 1A and 1B of the first embodiment are the same components that perform the same function.

2A and 2B, Modification Example 1 has a configuration similar to that of the plasma processing apparatus according to Embodiment 1. However, in Example 1, one magnetic core 120 is installed in the process chamber 110, whereas in Modification 1, two magnetic cores 120 are installed. This is to increase plasma generation by increasing the generation of an electric field inside the process chamber 110.

Of course, the winding coil 130 is wound around the two magnetic cores 120 in the winding type a plurality of times. The high frequency power is supplied from the high frequency power supply unit (not shown) to the winding coil 130 wound along the outer circumferential surface of the magnetic core 120 so that a high frequency current flows. The magnetic field is generated by the high frequency current, and the long-term field is converted into an electric field through the magnetic core 120 to induce an electric field around the magnetic core 120, and the plasma is generated inside the process chamber 110 by the electric field. Is generated.

In the modification, other components other than the installation number of the magnetic core 120 are the same as in Embodiment 1, and thus a detailed description thereof will be replaced with the contents described in Embodiment 1.

Example 2

3A and 3B are diagrams for explaining a plasma processing apparatus according to a second embodiment of the present invention. FIG. 3A is a perspective view and FIG. 3B is a front sectional view.

3A and 3B, the plasma processing apparatus according to the second exemplary embodiment of the present invention faces a first process chamber 210a in which an even number of first through holes are formed in one side wall, and faces the first through holes. The second process chamber 210b having an even number of second through holes drilled in the direction of insertion of the second process chamber 210 and the first and second through holes to be integrally formed or intersecting the first and second process chambers. The magnetic core 220 and the first and second process chambers 210a and 210b that form a rectangular pipe shape through the first and second process chambers 210a and 210b are installed on a part of the exposed magnetic core 220. It includes a winding coil 230 to induce an electric field to generate a plasma by ionizing the reaction gas respectively injected into the inside.

The first process chamber 210a is provided with a susceptor 240a in which a wafer or a glass substrate is vacuum-adsorbed to the substrate W to be seated thereon. The susceptors 240a are respectively installed on inner walls where the first through holes are not formed. The substrate W is mounted on an upper surface of the susceptor 240a in a direction parallel to a direction in which even-numbered first through holes are formed. In addition, a gas injection hole 211a is formed in the upper portion of the first process chamber 210a to inject the reaction gas into the chamber, and an unreacted reaction gas in the reaction gas is externally formed on the sidewall on which the susceptor 240a is formed. Exhaust ports 212a for discharging are provided, respectively. In addition, a slit valve 213a for entering and exiting the substrate W to be processed is provided, respectively.

The second process chamber 210b is provided with a susceptor 240b on which a wafer or a glass substrate is vacuum-adsorbed to the substrate W to be seated thereon. The susceptors 240b are respectively installed on inner walls where the second through holes are not formed. The substrate W is mounted on the upper surface of the susceptor 240b in a direction parallel to the direction in which the even number of second through holes are formed. In addition, a gas injection hole 211b is formed in the upper portion of the second process chamber 210b for injecting the reaction gas into the chamber, and an unreacted reaction gas in the reaction gas is externally formed on the sidewall on which the susceptor 240b is formed. The exhaust ports 212b for discharging are provided, respectively. Further, a slit valve 213b for entering and exiting the substrate W to be processed is provided, respectively.

High frequency power may be supplied to susceptors 240a and 240b from a high frequency (RF) power supply (not shown) to promote ionization of the reaction gas to control plasma generation. The exhaust ports 212a and 212b communicate with an exhaust pipe (not shown), respectively, and a vacuum pump (not shown) is installed in each exhaust pipe, and the first and second process chambers 210a and 210b of the first and second process chambers are installed through the vacuum pump. While maintaining the inside in a vacuum state, the unreacted reaction gas is smoothly discharged to the outside.

The magnetic core 220 has a cylindrical or rectangular structure filled with no empty space therein, and an outer circumferential surface of a portion inserted into the first and second process chambers 210a and 210b through the first and second through holes. Is inserted into the quartz tube (not shown). In this case, a gap having a predetermined size is formed between the outer circumferential surface of the magnetic core 220 and the inner circumferential surface of the tube. The quartz tube is also located within the first and second through holes, which are sealed by the elasticity of the quartz tube. As a result, the first and second process chambers 210a and 210b maintain a vacuum state.

The winding coil 230 is wound around the magnetic core 220 in the winding type a plurality of times in a portion exposed between the first and second process chambers 210a and 210b. A high frequency power is applied to the winding coil 230 from a high frequency power supply unit (not shown), and a high frequency current flows in the winding coil 230 by the high frequency power, whereby a magnetic field is generated in the winding coil 230. In addition, the electric field is induced around the magnetic core 220 by the magnetic field. The reaction gas injected into the first and second process chambers 210a and 210b is ionized by the induced electric field, thereby generating plasma in the first and second process chambers 210a and 210b. The generated plasma is treated, for example, etched, deposited, etc. as desired for the substrate W through a chemical reaction process with the surface of the substrate W.

(Modification 2)

4 is a modification of the preferred embodiment 21 of the present invention, and FIG. 4 is a perspective view. Here, among the reference numerals shown in FIG. 4, the same reference numerals as those shown in FIGS. 3A and 3B of Embodiment 2 are the same components that perform the same function.

Referring to FIG. 4, Modification Example 2 has a configuration similar to that of the plasma processing apparatus according to Embodiment 2. FIG. However, in the second embodiment, one magnetic core 220 is installed in the first and second process chambers 210a and 210b, whereas in the second modified example, two magnetic cores 220 are provided up and down. This is to increase the generation of plasma by increasing the generation of the electric field in the first and second process chamber (210a, 210b).

Of course, the winding coil 230 is wound around the two magnetic cores 220 in the winding type a plurality of times. The high frequency power is supplied from the high frequency power supply unit (not shown) to the winding coil 230 wound along the outer circumferential surface of the magnetic core 220 so that a high frequency current flows. The magnetic field is generated by the high frequency current, and the long-term field is converted into an electric field through the magnetic core 220 to induce an electric field around the magnetic core 220, and the first and second process chambers 210a are caused by the electric field. , 210b) is generated inside the plasma.

In the modification, other components other than the number of installation of the magnetic core 220 are the same as in the second embodiment, and thus, detailed description thereof will be replaced with the contents described in the second embodiment.

It will be understood that various changes and modifications can be made by those skilled in the art through the above description without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

The plasma processing apparatus of the present invention as described above can plasma-process the substrate to be placed in the vertical dual process chamber at a time, thereby achieving an effect of implementing a plasma processing apparatus with high productivity and efficiency. In addition, the present invention has the effect of enabling a high-speed plasma treatment by implementing a dual processing structure for processing the substrate to be placed in two chambers at once.

Claims (27)

A process chamber having a plurality of through holes drilled in the left and right side walls facing each other; A magnetic core inserted into and fastened into the process chamber through the through hole to form a square pipe shape through an integrated or fastening member so as to cross the inside of the process chamber from side to side; And Plasma including a winding coil which is not inserted into the through hole, is installed on a portion of the magnetic core exposed to the outside of the process chamber to induce an electric field to ionize the reaction gas injected into the process chamber to generate a plasma Processing unit. The plasma processing apparatus of claim 1, wherein a tube is installed at a portion of the magnetic core inserted into the process chamber through the through hole to surround an outer circumferential surface thereof. The method of claim 2, And a gap formed between the inner circumferential surface of the tube and the outer circumferential surface of the magnetic core. The plasma processing apparatus of claim 2 or 3, wherein the through hole is sealed by elasticity of the tube. The plasma processing apparatus of claim 1, further comprising a susceptor disposed on an inner wall of the process chamber in which the through hole is not formed, the susceptor adsorbing and seating the substrate to be processed. The plasma processing apparatus of claim 5, wherein the substrate to be processed is mounted on an upper surface of the susceptor in a direction parallel to a direction in which even-numbered through holes are formed. 7. The plasma processing apparatus of claim 5 or 6, further comprising a high frequency power supply for supplying high frequency power to the susceptor to promote ionization of the reaction gas to control plasma generation. The plasma processing apparatus according to claim 5 or 6, wherein an exhaust port for discharging unreacted reaction gas of the reaction gas is provided on a side wall of the process chamber in which the susceptor is installed. 9. The plasma processing apparatus of claim 8, wherein the exhaust pipe communicating with the exhaust port is further provided with a vacuum pump for sucking air in the process chamber so as to maintain the interior of the process chamber in a vacuum state. The through hole according to any one of claims 1, 2, 3, 5, and 6, wherein the through hole is inserted into one side of the process chamber in which the through hole is perforated. Plasma processing apparatus is provided with a slit valve, one each to the left and right between the two. The plasma processing apparatus of any one of claims 1, 2, 3, 5, and 6, wherein a gas inlet for injecting the reaction gas is provided in an upper portion of the process chamber. The plasma processing apparatus according to any one of claims 1, 2, 3, 5, and 6, further comprising a high frequency power supply unit for supplying high frequency power to the winding coil. A first process chamber having an even number of first through holes perforated on one side wall; A second process chamber in which an even number of second through holes are drilled in a direction facing the first through holes; A magnetic core inserted into and coupled to the first and second through holes to form a square pipe shape through an integrated or fastening member to cross the first and second process chambers; And A winding coil installed in a portion of the magnetic core exposed between the first and second process chambers to induce an electric field to ionize the reaction gas injected into the first and second process chambers, respectively, to generate a plasma; Plasma processing apparatus. The plasma processing apparatus of claim 13, wherein a tube is installed to surround an outer circumferential surface of a portion of the magnetic core inserted into the first and second process chambers through the first and second through holes, respectively. The method of claim 14, And a gap formed between the inner circumferential surface of the tube and the outer circumferential surface of the magnetic core. The plasma processing apparatus of claim 14, wherein the first and second through holes are sealed by elasticity of the tube. 15. The plasma processing apparatus of claim 13, further comprising a first susceptor disposed on an inner wall of the first process chamber in a direction facing the first through hole to vacuum suck the substrate to be processed. 18. The plasma processing apparatus of claim 17, wherein the substrate to be processed is seated on an upper surface of the first susceptor in a direction parallel to a direction in which an even number of first through holes are formed. 18. The plasma processing apparatus of claim 13 or 17, further comprising a second susceptor installed on an inner wall of the second process chamber in a direction opposite to the second through hole to vacuum-adsorb the substrate to be processed. . The plasma processing apparatus of claim 19, wherein the substrate to be processed is seated on an upper surface of the second susceptor in a direction parallel to a direction in which the even number of second through holes is formed. 20. The plasma processing apparatus of claim 19, further comprising a high frequency power supply for supplying high frequency power to the first and second susceptors to promote ionization of the reaction gas to control plasma generation. 20. The plasma processing apparatus of claim 19, wherein a first exhaust port is provided on a side wall of the first process chamber in which the first susceptor is installed to discharge unreacted reaction gas of the reaction gas. 23. The plasma processing apparatus of claim 22, wherein a second exhaust port is provided on a sidewall of the second process chamber in which the second susceptor is installed, to discharge unreacted reaction gas of the reaction gas. The air of the first and second process chambers according to claim 22, wherein the first and second exhaust pipes communicating with the first and second exhaust ports respectively maintain the interior of the first and second process chambers in a vacuum state. Plasma processing apparatus further provided with a first and second vacuum pump to suck the. 19. The slit valve according to any one of claims 13, 14, 15, 17, and 18, wherein a slit valve is provided at one side of each of the first and second process chambers for entering and removing the substrate. Installed plasma processing device. The gas inlet for injecting the reaction gas in any one of claim 13, 14, 15, 17 and 18, wherein the upper portion of the first and second process chambers, respectively Plasma processing apparatus provided. The plasma processing apparatus of any one of claims 13, 14, 15, 17, and 18, further comprising a high frequency power supply unit for supplying high frequency power to the winding coil.

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