KR20060084897A - Shower head of semiconductor production device - Google Patents

Abstract

The present invention relates to a showerhead for preventing the occurrence of defects in the uniformity of the wafer in the semiconductor manufacturing equipment.

The showerhead of the present invention for preventing a defect in the uniformity when supplying the process gas to the wafer, a plurality of holes are formed in the center for supplying the process gas, and a plurality of holes are formed at the edges other than the center. do.

Plasma distribution unit, showerhead, unity,

Description

Shower head of semiconductor manufacturing facility {SHOWER HEAD OF SEMICONDUCTOR PRODUCTION DEVICE}             

1 is a cross-sectional view schematically showing a general semiconductor processing apparatus.

2 is a perspective view of the shower head 400 of FIG.

3 is a block diagram of a semiconductor processing apparatus according to an embodiment of the present invention.

4 is a perspective view of the showerhead 200 of FIG.

<Description of reference numerals for main parts of the drawings>

100: chamber 102: gas supply pipe

104: cold plate 110: wafer

112: chuck 200: shower head

202: first gas injection port 204: second gas injection port

206: outer ring 208: top plate

210: bottom plate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing facility, and more particularly, to a shower head of a semiconductor manufacturing facility for preventing defects in the uniformity of a wafer.

In general, semiconductor processing apparatuses are mainly used in CVD (Chemical Vapor Deposition) process to form a thin film on the upper surface of the wafer, or the etching process to remove the material of a specific portion on the wafer.

In the semiconductor manufacturing process, a plurality of unit processes are continuously performed. That is, the wafer is manufactured into a chip, which is a semiconductor device, through a photo process, a diffusion process, an etching process, and a deposition process. Plasma is useful in semiconductor manufacturing processes, particularly for etching certain objects on a wafer or depositing certain objects on a wafer. The process using the plasma includes chemical vapor deposition (CVD) during the deposition process, and the etching process includes sputter etching and reactive ion etching. The plasma is also used in a dry stripping process for removing the photosensitive liquid hardened by an etching process or the like.

The chemical vapor deposition method using plasma has many excellent properties such as excellent step coverage of the formed thin film, high deposition rate, and uniform film compared with other conventional thin film deposition methods. It is widely used in the manufacturing method of a semiconductor element.

In dry etching processes such as sputtering etching and reactive ion etching, a wafer in which an insulating film or a metal layer is laminated is mounted in a closed process chamber, an etching reaction gas is injected into the process chamber, and a high frequency or microwave power is applied to the plasma state. The insulating film or the metal layer is etched by forming a gas. This dry etching process does not require a post-etch cleaning process, and has the property that the insulating film or the metal layer is anisotropically etched. Therefore, the dry etching process can not only form fine patterns for the integrated circuit better than the wet etching process, but can also simplify the process.

The semiconductor processing apparatus for performing such a process constitutes a processing chamber that can create a vacuum environment, and a susceptor for seating an unprocessed wafer on an upper surface of the processing chamber is provided, and a process gas is supplied above the processing chamber. A shower head is provided for injecting the process gas supplied by the apparatus and injecting the process gas into the processing chamber.

The shower head as described above uses a structure in which the process gas is double sprayed to improve the degree of uniformity or etching of the thin film formed on the upper surface of the wafer.

An example is disclosed in US Patent No. 6,086,677 “DUAL GAS FACEPLATE FOR A SHOWER HEAD IN A SEMICONDUCTOR WAFER PROCESSING SYSTEM”.

1 is a cross-sectional view schematically showing a general semiconductor processing apparatus.

As shown, a processing chamber 301 for forming a processing space, a susceptor 303 provided at an approximately central portion of the processing chamber 301 to seat an unprocessed wafer W on an upper surface thereof, and the processing chamber ( The shower head 400 is installed at an upper side of the 301 and receives the first and second process gases supplied from the first and second process gas supply sources 305 and 306 and sprays them into the processing chamber 301.

The shower head 400 is a manifold 410 for distributing and accommodating the first and second process gases, and a first and second manifold 410 installed on a bottom surface of the manifold 410. It consists of a jet plate 430 for separating and spraying two process gases into the processing chamber 301.

The manifold 410 is provided with a plurality of first and second gas supply holes 411a and 411b at an upper side thereof, and first and second buffer space portions 413 for separately accommodating the first and second process gases therein. At least one partition wall portion 412 is formed to form a plurality of channels 413, and the first buffer space portion 413 has a plurality of channels 413a having a connection path 413c to distribute the supplied first process gas evenly. 143b is formed, and a hole 413a 'is formed at the bottom of the channel 413a to allow the first process gas to be supplied to the injection plate 430.

The reason for forming the channels 413a and 413b and connecting them through the connection path 413c is as described above. As the position of the first gas supply port 411a is eccentrically positioned, the first process gas is uniformly sprayed ( 430) to resolve the failure to distribute.

2 is a perspective view of the showerhead 400 of FIG. 1.

The shower head 400 includes a plurality of holes 143 formed at predetermined intervals so that the process gas supplied from the first and second process gas sources 305 and 306 may be supplied downward. In order to prevent the shower head 400 from being etched by the process gases supplied from the first and second process gas sources 305 and 306, the shower head 400 is sapphire coated. In the shower head 400, a plurality of holes 143 are not formed in the central portion 147.                         

In the conventional shower head as described above, since the hole 143 for supplying the process gas is not formed in the central portion 147, the process gas is not uniformly distributed in the central portion 147, and thus the thickness of the material deposited on the wafer. There was a problem that the thinner the uniformity defect occurs.

Accordingly, an object of the present invention is to provide a shower head that can prevent a defect in the uniformity of the wafer by forming a plurality of holes in the center of the shower head to solve the above problems.

The showerhead according to the present invention for achieving the above object is characterized in that a plurality of holes for supplying the process gas to the center is formed, a plurality of holes are formed at the edges other than the center.

Such a characteristic configuration and the effects of the present invention will become more apparent through the detailed description of the embodiments with reference to the accompanying drawings.

Embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. And the shape of the elements in the drawings and the like are shown for more clear description, the elements denoted by the same reference numerals in the drawings means the same element.                     

Although the present invention is described by the accompanying drawings, it can be replaced by various forms, sizes, etc. It will be apparent to those skilled in the art. On the other hand, in the case of well-known techniques generally known, the detailed description thereof will be omitted.

3 is a configuration diagram of a semiconductor processing apparatus according to an embodiment of the present invention.

Referring to FIG. 3, a gas supply pipe 102 is provided at an upper end of the chamber 100. The gas supply pipe 102 passes a central portion of the upper cooling plate 104 to supply process gas to the shower head 200. The shower head 200 includes an upper plate 208 on which a first gas injection hole 202 is formed, a lower plate 210 on which a second gas injection hole 204 is formed, and an outer ring 206. The supplied etching gas passes through the first gas injection port 202 formed in the upper plate 208 and is discharged toward the lower plate 210 to generate first diffusion. The shape of the first gas injection port 204 can be arbitrarily determined. For example, as in the embodiment of the present invention, the inlet side is wide and the outlet side may be narrow, but is not necessarily limited thereto. A constant space is formed between the upper plate 208 and the lower plate 210. This space is necessary for the process gas to be uniformly mixed in order for the first diffused process gas to diffuse through the lower plate 210. The uniformly mixed process gas is supplied to the substrate 110 lying on the chuck 112 at the bottom of the chamber 100 via the lower plate 210 on which the second gas injection hole 204 is formed. The shape of the second gas injection port 204 can be arbitrarily determined. For example, as in the embodiment of the present invention, the diameter of the inlet and the outlet may be the same, or may be the same as the first gas injection port 202, but is not necessarily limited thereto.                     

4 is a perspective view of the showerhead 200 of FIG. 3.

The shower head 200 includes a plurality of holes 143 formed at regular intervals so that the process gas supplied from the gas supply pipe 102 may be supplied downward, and a plurality of holes 143 are formed in the central portion 214. It is. In order to prevent the shower head 200 from being etched by the process gas supplied from the gas supply pipe 102, the sapphire coating is performed on the shower head 200.

The shower head 200 has a plurality of holes 202 formed at regular intervals at edges other than the center 214 and the center 214 so that the process gas supplied from the gas supply pipe 102 can be uniformly supplied to the wafer. have. The shower head 200 has a plurality of holes 202 is formed in the center 214 to uniformly supply the process gas supplied from the gas supply pipe 102 to the wafer to prevent the occurrence of defects in the uniformity.

On the other hand, the present invention is not limited to the above-described embodiments, it is apparent that modifications and improvements can be made by those skilled in the art without departing from the spirit of the present invention.

As described above, the present invention has the advantage that the uniformity of the wafer can be prevented by forming a plurality of holes in the center of the shower head to uniformly distribute the gas supplied from the gas supply source to the wafer.

Claims (1)

In the shower head of the semiconductor manufacturing equipment, A plurality of holes are formed in the center for supplying the process gas, the shower head characterized in that a plurality of holes are formed at the edges other than the center.

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