KR20060075068A - Method for fabricating in semiconductor device - Google Patents
Method for fabricating in semiconductor device Download PDFInfo
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- KR20060075068A KR20060075068A KR1020040113625A KR20040113625A KR20060075068A KR 20060075068 A KR20060075068 A KR 20060075068A KR 1020040113625 A KR1020040113625 A KR 1020040113625A KR 20040113625 A KR20040113625 A KR 20040113625A KR 20060075068 A KR20060075068 A KR 20060075068A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 39
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims abstract description 24
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 13
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 14
- 150000001412 amines Chemical class 0.000 abstract description 11
- 239000000356 contaminant Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000007865 diluting Methods 0.000 abstract description 3
- 230000007935 neutral effect Effects 0.000 abstract description 3
- 229920000620 organic polymer Polymers 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000010410 layer Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 반도체 제조 기술에 관한 것으로, 특히 반도체 소자 제조 공정 중 금속 세정 공정에 관한 것이다. 본 발명은 금속 세정시 금속의 손상을 방지하면서 비 아민계 세정액을 사용하여 효율적으로 오염물을 제거할 수 있는 반도체 소자 제조 방법을 제공하는 것을 그 목적으로 한다. 본 발명에서는 금속 세정시 황산, 오존, 과산화수소, 불화암모니움을 순수(DI Water)에 희석시킨 무기성 케미컬을 사용한다. 오존과 과산화수소에 의해 산화된 불화암모니움이 기판에 흡착되어 있는 폴리머 유기물을 식각하는 작용에 의해 세정 효과를 얻을 수 있으며, 세정액이 약한 농도의 중성(pH = 5.0∼8.0) 상태이기 때문에 금속의 손상을 방지할 수 있다. 한편, 세정은 기존의 침수타입 세정조 장비가 아닌 싱글 웨이퍼 스핀 장비에서 수행하며, 세정액 온도는 25∼40℃, 세정 시간은 100초 이하로 공정효율 측면에서 장점이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing techniques, and more particularly to metal cleaning processes in semiconductor device manufacturing processes. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device capable of efficiently removing contaminants using a non-amine cleaning liquid while preventing metal damage during metal cleaning. In the present invention, an inorganic chemical obtained by diluting sulfuric acid, ozone, hydrogen peroxide, and ammonium fluoride in DI water is used. Ammonium fluoride oxidized by ozone and hydrogen peroxide can be cleaned by etching the organic polymer adsorbed on the substrate, and the metal is damaged due to its neutral concentration (pH = 5.0 to 8.0). Can be prevented. On the other hand, cleaning is performed in a single wafer spin equipment rather than the conventional submerged type cleaning tank equipment, the cleaning liquid temperature is 25 ~ 40 ℃, cleaning time is less than 100 seconds has the advantage in terms of process efficiency.
금속 세정, 싱글 웨이퍼 스핀 장비, 무기계 케미컬, 손상, 비용Metal Cleaning, Single Wafer Spin Equipment, Inorganic Chemicals, Damage, Cost
Description
도 1은 종래기술에 따른 금속배선 형성 공정 과정을 나타낸 흐름도.1 is a flow chart showing a metal wire forming process according to the prior art.
도 2는 본 발명의 일 실시예에 따른 금속배선 형성 공정 과정을 나타낸 흐름도.2 is a flowchart illustrating a metal wire forming process according to an embodiment of the present invention.
본 발명은 반도체 제조 기술에 관한 것으로, 특히 반도체 소자 제조 공정 중 금속 세정 공정에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing techniques, and more particularly to metal cleaning processes in semiconductor device manufacturing processes.
일반적으로, 반도체 제조 공정 중 발생하는 웨이퍼의 오염물은 유기물, 무기물, 금속이온 및 자연 산화막 등 그 종류도 다양하고, 오염물에 의해 유발되는 불량의 종류도 다양하다.In general, the contaminants of the wafer generated during the semiconductor manufacturing process are various, such as organic, inorganic, metal ions, and natural oxide film, and various kinds of defects caused by the contaminants.
따라서, 신뢰성이 높은 소자를 제조하기 위해서는 다양한 오염물들을 효과적으로 제거할 수 있는 세정 기술이 필요하다.Therefore, in order to manufacture highly reliable devices, a cleaning technique capable of effectively removing various contaminants is required.
통상적으로 세정 공정에서는 황산, 암모니아, 염산 등의 산성 또는 알카리성 케미컬을 주 세정액으로 이용하고 있는데, 이러한 세정액에 금속이 노출될 경우 치명적인 손실을 유발할 수 있기 때문에 금속 세정 공정에는 이러한 산성 또는 알카리성 케미컬을 적용하기 어렵다.Normally, the cleaning process uses acidic or alkaline chemicals such as sulfuric acid, ammonia, and hydrochloric acid as main cleaning liquids. However, when the metal is exposed to such cleaning liquids, fatal loss may occur, so the acidic or alkaline chemicals are applied to the metal cleaning process. Difficult to do
현재 금속이 노출되는 식각 공정 후의 세정 공정 - 금속비트라인 식각후, 금속배선 식각후, 비아홀 식각후 세정 공정 - 에서는 유기성 케미컬을 주 세정액으로 사용하고 있다. 특히 아민계 케미컬(Amine Based Chemical)을 주로 사용하고 있다.At present, organic chemicals are used as the main cleaning liquids in the cleaning process after the etching process in which the metal is exposed-the cleaning process after the metal bit line etching, the metal wiring etching, and the via hole etching process. In particular, amine-based chemicals (Amine Based Chemical) are mainly used.
도 1은 종래기술에 따른 금속배선 형성 공정 과정을 나타낸 흐름도이다.1 is a flowchart illustrating a metal wire forming process according to the prior art.
도 1을 참조하면, 종래기술에 따른 금속배선 형성 공정은 우선 소정의 하부 구조가 형성된 기판 상에 금속막을 증착한다(100).Referring to FIG. 1, a metallization process according to the related art first deposits a metal film on a substrate on which a predetermined substructure is formed (100).
다음으로, 금속막 상에 포토레지스트를 도포하고, 금속배선 마스크를 사용한 노광 및 현상을 실시하여 포토레지스트를 패터닝한다(110).Next, a photoresist is applied on the metal film, and exposure and development using a metal wiring mask are performed to pattern the photoresist (110).
이어서, 포토레지스트를 식각 베리어로 사용하여 노출된 금속막을 건식 식각한다(120).Subsequently, the exposed metal film is dry-etched using the photoresist as an etching barrier (120).
계속하여, 잔류하는 포토레지스트를 스트립한다(130). Subsequently, the remaining photoresist is stripped (130).
다음으로, 금속 식각 후 세정 공정을 진행한다(140). 세정 공정(140)은 침수타입의 세정조(Wet Bath) 장비에서 진행하며, 세부적인 공정은 다음과 같다.Next, a metal etching process is performed after the etching (140). The
우선, 주 세정액인 아민계 케미컬을 사용하여 세정을 실시한다(141).First, washing is performed using an amine chemical as the main washing liquid (141).
다음으로, 이소프로필알콜(IPA) 린스(142), QDR(quick drain rinse)(143), 순수 린스(144)를 차례로 실시한다.Next, isopropyl alcohol (IPA) rinse 142, quick drain rinse (QDR) 143, and pure water rinse 144 are performed in this order.
이어서, 이소프로필알콜(IPA)을 사용하여 건조를 수행하여 세정 공정을 완료 한다(145).Subsequently, drying is performed using isopropyl alcohol (IPA) to complete the cleaning process (145).
이와 같이 종래의 금속 세정시 주 세정액으로 사용되고 있는 아민계 케미컬은 여러가지 문제점을 수반하고 있다.As described above, amine chemicals used as main cleaning liquids in conventional metal cleaning have various problems.
우선, 아민계 케미컬을 적용할 때, 세정액의 온도가 70℃ 이상의 고온이어서 공정 안전성 측면에서 불리하며, 실제 세정 시간도 15~30분 정도로 긴 편이어서 공정 효율성 측면에서 불리하다는 문제점이 있다.First of all, when the amine chemical is applied, the temperature of the cleaning liquid is high at 70 ° C. or higher, which is disadvantageous in terms of process safety, and the actual cleaning time is also about 15-30 minutes, which is disadvantageous in terms of process efficiency.
또한, 아민계 케미컬은 1갤론당 40달러 이상으로 단가가 비싼 편이기 때문에 제조 단가를 상승시키는 하나의 요인으로 작용하고 있다.In addition, since the amine-based chemicals are more expensive than $ 40 per gallon, it acts as a factor to increase the manufacturing cost.
그리고, 아민계 케미컬은 환경이나 작업안전 측면에서 유해한 물질이며, 전세계적으로 수급 부족 상태에 있다는 문제점이 있다.In addition, the amine-based chemicals are harmful substances in terms of environment and work safety, and there is a problem in short supply and demand worldwide.
본 발명은 상기한 종래기술의 문제점을 해결하기 위해 제안된 것으로, 금속 세정시 금속의 손상을 방지하면서 비 아민계 세정액을 사용하여 효율적으로 오염물을 제거할 수 있는 반도체 소자 제조 방법을 제공하는 것을 그 목적으로 한다.
The present invention has been proposed to solve the above problems of the prior art, to provide a method for manufacturing a semiconductor device capable of efficiently removing contaminants using a non-amine cleaning liquid while preventing metal damage during metal cleaning. The purpose.
상기 목적을 달성하기 위한 본 발명의 일측면에 따르면, 소정의 금속층이 형성된 웨이퍼에 대해 상기 금속층을 노출시키는 건식식각 공정을 수행하는 단계와, 황산, 오존, 과산화수소, 불화암모니움을 순수에 희석시킨 무기성 케미컬을 싱글 웨이퍼 스핀 장비에 로딩된 상기 웨이퍼 상에 공급하면서 세정을 실시하는 단계를 포함하는 반도체 소자 제조방법이 제공된다.According to an aspect of the present invention for achieving the above object, the step of performing a dry etching process for exposing the metal layer to a wafer having a predetermined metal layer, and diluted sulfuric acid, ozone, hydrogen peroxide, ammonium fluoride in pure water Provided is a method of fabricating a semiconductor device, the method including cleaning while supplying an inorganic chemical on the wafer loaded in a single wafer spin device.
본 발명에서는 금속 세정시 황산, 오존, 과산화수소, 불화암모니움을 순수(DI Water)에 희석시킨 무기성 케미컬을 사용한다. 오존과 과산화수소에 의해 산화된 불화암모니움이 기판에 흡착되어 있는 폴리머 유기물을 식각하는 작용에 의해 세정 효과를 얻을 수 있으며, 세정액이 약한 농도의 중성(pH = 5.0∼8.0) 상태이기 때문에 금속의 손상을 방지할 수 있다. 한편, 세정은 기존의 침수타입 세정조 장비가 아닌 싱글 웨이퍼 스핀 장비에서 수행하며, 세정액 온도는 25∼40℃, 세정 시간은 100초 이하로 공정효율 측면에서 장점이 있다.In the present invention, an inorganic chemical obtained by diluting sulfuric acid, ozone, hydrogen peroxide, and ammonium fluoride in DI water is used. Ammonium fluoride oxidized by ozone and hydrogen peroxide can be cleaned by etching the organic polymer adsorbed on the substrate, and the metal is damaged due to its neutral concentration (pH = 5.0 to 8.0). Can be prevented. On the other hand, cleaning is performed in a single wafer spin equipment rather than the conventional submerged type cleaning tank equipment, the cleaning liquid temperature is 25 ~ 40 ℃, cleaning time is less than 100 seconds has the advantage in terms of process efficiency.
이하, 본 발명이 속한 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사항을 용이하게 실시할 수 있을 정도로 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 상세하게 설명한다.Hereinafter, the most preferred embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the technical matters of the present invention.
도 2는 본 발명의 일 실시예에 따른 금속배선 형성 공정 과정을 나타낸 흐름도이다.2 is a flowchart illustrating a metal wiring forming process according to an embodiment of the present invention.
도 2를 참조하면, 본 실시예에 따른 금속배선 형성 공정은 우선 소정의 하부 구조가 형성된 기판 상에 금속막을 증착한다(200).Referring to FIG. 2, in the metal wire forming process according to the present embodiment, a metal film is first deposited on a substrate on which a predetermined substructure is formed (200).
다음으로, 금속막 상에 포토레지스트를 도포하고, 금속배선 마스크를 사용한 노광 및 현상을 실시하여 포토레지스트를 패터닝한다(210).Next, a photoresist is applied onto the metal film, and exposure and development using a metal wiring mask are performed to pattern the photoresist (210).
이어서, 포토레지스트를 식각 베리어로 사용하여 노출된 금속막을 건식 식각 한다(220).Subsequently, the exposed metal film is dry-etched using the photoresist as an etching barrier (220).
계속하여, 잔류하는 포토레지스트를 스트립한다(230). Subsequently, the remaining photoresist is stripped (230).
다음으로, 금속 식각 후 세정 공정을 진행한다(240). 세정 공정(240)은 세정 공정은 기존의 침수타입 세정조 장비가 아닌 싱글 웨이퍼 스핀 장비(Single Wafer Spin Tool)에 상기와 같은 금속 식각 공정을 마친 웨이퍼를 로딩한 상태에서 진행하며, 세부적인 공정은 다음과 같다.Next, a cleaning process is performed after the metal is etched (240). In the
우선, 세정액인 무기성 케미컬을 사용하여 세정을 실시한다(241). 이때, 세정액으로는 금속 세정시 황산, 오존, 과산화수소, 불화암모니움을 순수(DI Water)에 희석시킨 중성 케미컬(pH = 5.0∼8.0)을 사용한다. 세정액의 온도는 25∼40℃, 세정 시간은 30∼100초, 웨이퍼 회전수는 800∼1000rpm이 바람직하다. 한편, 황산, 오존, 과산화수소, 불화암모니움, 순수의 조성비는 황산 1~8%, 오존 10~200ppm, 과산화수소 1~7%, 불화암모니움 50~1000ppm, 순수 85~98%가 바람직하다.First, washing is performed using an inorganic chemical that is a cleaning liquid (241). At this time, a neutral chemical (pH = 5.0 to 8.0) obtained by diluting sulfuric acid, ozone, hydrogen peroxide, and ammonium fluoride in DI water is used as the cleaning liquid. The temperature of the cleaning liquid is preferably 25 to 40 ° C, the cleaning time is 30 to 100 seconds, and the wafer rotation speed is 800 to 1000 rpm. On the other hand, the composition ratio of sulfuric acid, ozone, hydrogen peroxide, ammonium fluoride, and pure water is preferably 1 to 8% sulfuric acid, 10 to 200 ppm of ozone, 1 to 7% hydrogen peroxide, 50 to 1000 ppm of ammonium fluoride, and 85 to 98% pure water.
다음으로, 순수 린스를 수행하고(242), N2 가스를 이용하여 건조를 실시하여 세정 공정을 완료한다(243).Next, pure water is rinsed (242), and dried using N 2 gas to complete the cleaning process (243).
무기성 케미컬에서 황산은 유기물을 용해시켜 제거하는 역할을 하며, 오존과 과산화수소는 기판 표면을 산화시키는 작용을 하고, 불화암모니움이 산화물을 식각하는 작용을 수행하여 황산의 용해 작용에 의해 제거되지 않은 폴리머 및 레지듀를 제거하게 된다.In inorganic chemicals, sulfuric acid dissolves and removes organic matter, ozone and hydrogen peroxide act to oxidize the surface of the substrate, and ammonium fluoride acts to etch oxide, which is not removed by dissolution of sulfuric acid. This will remove the polymer and the residue.
그리고, 오존은 강력한 산화제로서 과산화수소에 의한 산화작용을 강화시키 기 위하여 첨가한다. 한편, 과산화수소의 첨가는 오존의 라이프 타임을 감소시키나 수산화기(OH)의 생성을 증가시키며, 이 수산화기가 유기물의 제거 작용을 가속화시키게 된다.And ozone is a powerful oxidant, added to enhance the oxidation by hydrogen peroxide. On the other hand, the addition of hydrogen peroxide reduces the lifetime of ozone but increases the production of hydroxyl (OH), which will accelerate the removal of organic matter.
아울러, 기존의 IPA 건조가 N2 건조로 대체된 바, 본 발명에서는 IPA 공정을 완전히 배제할 수 있게 되었다.In addition, the conventional IPA drying is replaced by N 2 drying, the present invention can completely exclude the IPA process.
이상에서 설명한 본 발명은 전술한 실시예에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments, and various permutations, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be clear to those who have it.
예컨대, 전술한 실시예에서는 금속배선 형성을 위한 식각 후 세정 공정에 본 발명을 적용하는 경우를 일례로 들어 설명하였으나, 본 발명은 금속 비트라인 형성을 위한 식각 공정 후, 다층 금속배선의 비아홀 형성을 위한 층간절연막 식각 후 등과 같이 금속층을 노출시키는 모든 식각 공정의 후세정 공정시 적용이 가능하다.For example, in the above-described embodiment, the present invention is described as an example of applying the present invention to a post-etch cleaning process for forming a metal wiring, but the present invention, after the etching process for forming a metal bit line, forms a via hole of a multilayer metal wiring. In the post-cleaning process of all the etching process that exposes the metal layer, such as after the interlayer insulating film for etching.
본 발명에 적용되는 무기성 세정액은 단가가 1∼2$/kg 정도로 기존의 아민계 케미컬에 비해 80% 이상의 비용 절감 효과를 기대할 수 있으며, 유기용제를 사용하지 않기 때문에 기존의 세정 공정에서 유기용제를 린스하기 위해 적용하던 IPA 린 스 단계를 생략할 수 있다. 또한, 싱글 웨이퍼 스핀 장비을 사용하면 기존의 침수타입 세정조 장비와 달리 오염물질이 웨이퍼에 재오염 되는 것을 방지할 수 있으며, 반응 부산물이 감소되는 효과가 있다. 또한, 세정액의 온도가 기존에 비해 낮아 작업 안전성을 확보하고, 세정 시간 또한 기존에 비해 80% 이상 줄일 수 있어 공정효율을 재고할 수 있다. 그리고, 유해물질인 아민계 케미컬 사용을 배제함으로써 환경오염을 줄이는 효과를 기대할 수 있다.
Inorganic cleaning liquid applied to the present invention can be expected to reduce the cost of more than 80% compared to the existing amine-based chemicals as the unit price of 1 ~ 2 $ / kg, and organic solvent in the conventional cleaning process because no organic solvent is used. You can omit the IPA rinse step that was used to rinse. In addition, the use of a single wafer spin equipment, unlike conventional immersion type cleaning tank equipment can prevent contaminants from recontaminating the wafer, there is an effect that the reaction by-products are reduced. In addition, the temperature of the cleaning liquid is lower than the conventional to ensure the safety of work, and the cleaning time can also be reduced by more than 80% compared to the conventional process efficiency can be reconsidered. In addition, the effect of reducing environmental pollution can be expected by eliminating the use of amine-based chemicals that are harmful substances.
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| KR101107672B1 (en) * | 2009-08-27 | 2012-01-25 | 삼성전기주식회사 | Plating method for substrate |
| KR101396929B1 (en) * | 2007-10-30 | 2014-05-20 | (주)코미코 | Cleaning solution for removing impurity and method of removing impurity using the same |
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| KR101396929B1 (en) * | 2007-10-30 | 2014-05-20 | (주)코미코 | Cleaning solution for removing impurity and method of removing impurity using the same |
| KR101107672B1 (en) * | 2009-08-27 | 2012-01-25 | 삼성전기주식회사 | Plating method for substrate |
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