KR20060036846A - Wafer warpage protection apparatus - Google Patents

Wafer warpage protection apparatus Download PDF

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Publication number
KR20060036846A
KR20060036846A KR1020040085961A KR20040085961A KR20060036846A KR 20060036846 A KR20060036846 A KR 20060036846A KR 1020040085961 A KR1020040085961 A KR 1020040085961A KR 20040085961 A KR20040085961 A KR 20040085961A KR 20060036846 A KR20060036846 A KR 20060036846A
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KR
South Korea
Prior art keywords
wafer
guide ring
process table
edge
pressure
Prior art date
Application number
KR1020040085961A
Other languages
Korean (ko)
Inventor
김지훈
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020040085961A priority Critical patent/KR20060036846A/en
Publication of KR20060036846A publication Critical patent/KR20060036846A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Abstract

The present invention relates to a wafer warpage prevention apparatus. According to the present invention, the wafer bending prevention device is a process table on which the wafer to be processed is placed, a guide ring protruding a predetermined height from the upper surface of the process table and formed along the edge of the process table, a portion of which overlaps the edge of the wafer, Among the upper surface of the process table, a plurality of pins are formed at predetermined intervals inside the guide ring, and the guide rings protrude more than the protruding height, and a plurality of fins are formed on the process table to generate vacuum pressure to adsorb the wafer and the guide ring. It is installed on the upper portion of the guide ring so as to separate from the pressurizing cover that pressurizes the edge of the wafer to be warped while being raised / lowered by a predetermined pressure to a predetermined pressure.
The wafer deflection prevention device thus formed can prevent the edge of the wafer from bending because the wafer edge is pressed at a predetermined pressure by using the pressure cover.
Wafer bend protection device, guide ring, pressure cover, wafer edge

Description

Wafer Warpage Protection Apparatus {Wafer Warpage Protection Apparatus}

1 is a graph for explaining the bending of the edge of the wafer in a conventional process table.

2 is an exploded perspective view of the wafer warpage preventing apparatus according to the first embodiment of the present invention;

3 is a cross-sectional view taken along the line A-A of FIG.

4 is an enlarged view illustrating main parts of the portion B of FIG. 2.

5 is an exploded perspective view of the wafer warpage preventing apparatus according to the second embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer warpage prevention device, and more particularly, to a wafer warpage prevention device for preventing the edge of a wafer from being bent by a vacuum pressure for adsorbing the wafer to a process table.

In general, photolithography is a technique for forming a fine pattern by selectively removing the top layer of the wafer. Such a photolithography process includes a photoresist coating process for forming a photoresist layer on a wafer, an exposure process in which predetermined circuit patterns formed on a mask are reduced and exposed to a photoresist film, and a photo with a changed property due to exposure. A developing process for selectively removing the resist film, an etching process for removing the lower layer exposed to the outside of the photoresist film due to the developing process, and a stripping process for removing the remaining photoresist film.

Since the photolithography process described above is a process of forming a pattern on a wafer, the uniformity of the photoresist film and the focus of light for exposing the pattern are very important. Therefore, in order to proceed with the above-described photolithography processes, the wafer is placed on a flat process table, and vacuum pressure is formed on the process table so that the wafer does not move during the process to adsorb the wafer to the process table.

A guide ring, a plurality of support pins, lift pins, and vacuum holes are formed in the process table in which the exposure process is performed.

The guide ring is formed along the edge of the process table and protrudes to a predetermined height from the upper surface of the process table. The inner diameter of the guide ring is formed smaller than the diameter of the wafer, and the outer diameter of the guide ring is formed larger than the diameter of the wafer so that the wafer overlaps a portion of the guide ring when placed on the process table. This guide ring serves to seal the vacuum pressure generated on the vacuum table so that it does not leak out.

The support pins are formed on the inside of the guide ring of the process table and are formed at the same height as the height of the guide ring or slightly higher than the height of the guide ring. The support pins support the wafer together with the guide ring to prevent the wafer from bending toward the process table in the inner region of the guide ring when a vacuum pressure is generated on the vacuum table by the height of the guide ring.

A plurality of lift pins are formed in the center and adjacent portions of the process table to be equally spaced from each other. The lift pins position the wafer to be processed on the process table while up / down by the cylinder, and lift the completed wafer from the process table.

A plurality of vacuum holes are formed in the inner space of the guide ring at regular intervals. These vacuum holes create a vacuum pressure on the process table to secure the wafer to the process table so that when the wafer is placed on the process table, the wafer does not move.

However, when the guide ring having a predetermined height is formed on the edge of the process table to seal the vacuum pressure, the edge of the wafer is shown in the graph of FIG. 1 by the guide ring and the pins formed just in front of the guide ring by the vacuum pressure. As described above, the guide ring is bent upward from the portion where the guide ring is located. 1, the wafer edge is about 15 nm when the central portion of the guide ring is located at about 98 mm of the wafer diameter.

For this reason, there is a problem in that alignment miss occurs at the edge of the wafer where warpage occurs, and the pattern defect is generated because the beam that exposes the pattern is out of focus.

 Accordingly, the present invention has been made in view of such a conventional problem, and an object of the present invention is to press the edge of the wafer to prevent the edge of the wafer from bending by the guide ring and the vacuum pressure.

In order to achieve the above object, the present invention provides a process table on which a wafer to be processed is placed, a guide ring protruding at a predetermined height from an upper surface of the process table, formed along an edge of the process table, and partially overlapping the edge of the wafer, Among the upper surface of the process table, a plurality of pins are formed at predetermined intervals inside the guide ring, and the guide rings protrude more than the protruding height, and a plurality of fins are formed on the process table to generate vacuum pressure to adsorb the wafer and the guide ring. It is provided on the top of the guide ring so as to separate from the wafer provides a wafer warpage prevention device including a pressing cover for pressing the edge of the wafer to be raised at a predetermined pressure while being raised / lowered by the drive unit.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the wafer warpage prevention apparatus according to the present invention.

<First Embodiment>

FIG. 2 is an exploded perspective view of the wafer warpage preventing apparatus according to the first embodiment of the present invention, and FIG. 3 is a cross-sectional view taken along the line A-A of FIG. 2. 4 is an enlarged view illustrating main parts in which the portion B of FIG. 2 is enlarged.

2 to 4, the wafer warpage prevention apparatus 100 of the exposure apparatus includes a process table 110 and a wafer 10 into which the wafer 10 to be processed is introduced and the wafer 10 is adsorbed by vacuum pressure. It includes a pressure cover 200 for preventing the edge of the bend.

The process table 110 includes a body 112 on which various components are installed and a circular surface plate 114 on which the wafer 10 is placed and positioned on the upper surface of the body 112. A guide ring 120, a plurality of support pins 130, lift pins 140, and vacuum holes 150 are formed on an upper surface of the surface plate 114.

The guide ring 120 is formed along the edge of the surface plate 114 and protrudes from the upper surface of the process table 110 at a predetermined height. The inner diameter of the guide ring 120 is smaller than the diameter of the wafer 10, and the outer diameter of the guide ring 120 is larger than the diameter of the wafer 10. Thus, when the wafer 10 is placed on the process table 110, the edge of the wafer 10 overlaps a portion of the guide ring 120. The guide ring 120 serves to seal the vacuum pressure so that the vacuum pressure generated on the process table 110 does not leak out when the wafer 10 is placed.

The support pins 130 are formed inside the guide ring 120 at the upper surface of the process table 110. In the first region s (see FIG. 3) of the inner region of the guide ring 120, which is adjacent to the guide ring, the support pins 130 are formed. In order to minimize the warpage of the wafer 10, the gap between the support pin 132 and the support pin 132 is narrowly disposed. In the area between the center of the surface plate 114 and the first area s, that is, the second area s', the distance between the support pins 134 and the support pins 134 is adjusted to the first area s. It is disposed wider than the gap between the formed support pins (132). The support pins 130 support the wafer 10 together with the guide ring 120 so that when the vacuum pressure is generated on the vacuum table 110, the wafer 10 is moved by the height of the guide ring 120. (s) and in the second region s' to prevent bending towards the process table 110. Accordingly, the support pins 130 are formed at the same height as the height of the guide ring 120 or slightly higher than the height of the guide ring 120.

The lift pins 140 are formed in plural to be equally spaced from each other at a portion adjacent to the center of the surface plate 114. Lift pins 140 are raised / lowered by a cylinder (not shown) installed inside the body 112. That is, when the wafer 10 to be processed is introduced into the process table 110 in the wafer input direction indicated by the arrow in FIG. 2 or the wafer 10 having the process is carried out to the outside of the process table 110 is lift pin ( 140 are raised by the cylinder. The lift pins 130 are then lifted by the cylinder and protrude to the top surface of the process table 110. On the other hand, if the wafer 10 to be processed on the lift pin 140 is placed, the cylinder is to move down. At this time, the lift pins 140 are also introduced into the body 112 while descending together with the cylinder, and the wafer 10 placed on the upper surfaces of the lift pins 140 is guide ring 120 and support pin 130. It is seated on the upper surface of the field.

The vacuum holes 150 are formed in plural at regular intervals in the inner regions s and s' of the guide ring 120. When the wafers 10 are placed on the process table, the vacuum holes 150 generate a vacuum pressure on the process table 110 so that the wafers 10 do not move while the process is in progress. It is fixed to the upper surface of (110).                     

On the other hand, the pressure cover 200 is installed on the upper portion of the guide ring 120, it is installed to be separated from the guide ring 120. The pressure cover 200 has the same ring shape as the guide ring 120. The inner diameter of the pressing cover 200 is formed to be slightly smaller than the diameter of the center of the guide ring 120 so as to press the edge of the wafer 10, the outer diameter of the pressing cover 200 of the guide ring 120 It is formed equal to the outer diameter. Here, the pressure cover 120 should press the wafer 10 by covering only the area where the exposure is not performed on the wafer 10 (that is, an area about 3 mm from the outer circumferential surface of the wafer toward the center of the wafer). Therefore, the inner diameter of the pressing cover 200 is preferably formed so as not to enter 3 mm or more from the outer circumferential surface of the wafer 10 toward the center of the wafer 10.

The pressure cover 200 formed as described above presses the edge of the wafer 10 in which bending occurs while being raised / lowered by a driving unit (not shown). The driving unit is installed inside the body 112. As illustrated in FIGS. 2 and 3, the pressure cover 200 is connected to the driving unit by a plurality of supports 210. According to the first embodiment, since the driving unit is installed inside the body 112, the support bases 210 are also installed on the process table 110, and the support bases 210 protrude to the upper surface of the process table 110 and pressurized. It is fixed to the cover 200. The support 210 connecting the pressure cover 200 and the driving unit moves up / down the pressure cover 200 while being moved by the driving unit, and transmits a predetermined pressure to the pressure cover 200.

In more detail, when the wafer 10 is inserted into the process table 110, the support 210 is lifted by the driving unit to lift the pressure cover 200. Then, as the pressure cover 200 is separated from the guide ring 120, a space suitable for the wafer 10 to be inserted between the guide ring 120 and the pressure cover 200 is generated. Here, the support 210 protruding to the upper surface of the process table 10 when the wafer 10 is introduced into or taken out of the process table 110 does not interfere with the loading and unloading of the wafer 10. As shown, the supports 210 are all disposed on the side opposite to the wafer input direction.

Meanwhile, when the wafer 10 is placed on the guide ring 120 and the support pins 130, the support members 210 descend by the driving unit to contact the pressure cover 200 with the wafer 10. At this time, the driving unit transmits a force greater than the force to bend the edge of the wafer 10 to the pressure cover 200, the pressure cover 200 presses the edge of the wafer 10 by the force transmitted from the drive unit. Then, the edge portion of the wafer 10 overlapped with the guide ring 120 is not bent upward of the guide ring 120 by the pressing force of the pressure cover 200, so that the wafer 10 is generally flat.

Second Embodiment

The second embodiment according to the present invention has the same configuration as the first embodiment except that the driving portion for raising / lowering the pressure cover is not provided on the process table side. Therefore, the same members of the wafer warpage preventing apparatus are denoted by the same reference numerals as in the first embodiment, and duplicated description thereof will be omitted.

5 is an exploded perspective view of the wafer warpage preventing apparatus according to the second embodiment of the present invention.

Referring to FIG. 5, the shape of the pressure cover 200 is the same as that described in the first embodiment, and the pressure cover 200 is applied so that a more uniform force is applied to the pressure cover 200 than in the first embodiment. Separate from process table 110. That is, the pressure cover 200 is installed above the process table 110 and spaced apart from the process table 110 by a predetermined interval.

The pressing cover 200 pressurizes the edge of the wafer 10 in which bending occurs while being raised / lowered by a driving unit (not shown). The driver is provided above the wafer 10 more than a scanner (not shown) that irradiates the exposure beam so as not to interfere with the exposure process of irradiating the beam. As shown in FIG. 5, the pressure cover 200 is connected to the driving unit by a plurality of supports 210. The support 210 connecting the pressure cover 200 and the driving unit moves up / down the pressure cover 200 while being moved by the driving unit, and transmits a predetermined pressure to the pressure cover 200. Preferably, the support 210 is disposed at equal intervals on the pressure cover 200 to uniformly transmit the force transmitted from the driving unit to the pressure cover 200.

When the wafer 10 is inserted into the process table 110, the support members 210 are lifted by the driving unit to lift the pressure cover 200. Then, as the pressure cover 200 is separated from the guide ring 120, a space suitable for the wafer 10 to be inserted between the guide ring 120 and the pressure cover 200 is generated.

On the other hand, if the wafer 10 is placed on the guide ring 120 and the support pins 130, the support 210 is lowered by the driving unit to contact the pressure cover 200 to the wafer 10. At this time, the driving unit transmits a force greater than the force to bend the edge of the wafer 10 to the pressure cover 200, the pressure cover 200 presses the edge of the wafer 10 by the force transmitted from the drive unit. Then, the edge portion of the wafer 10 overlapped with the guide ring 120 is not bent upward of the guide ring 120 by the pressing force of the pressure cover 200, so that the wafer 10 is generally flat.

Here, when the pressure cover 200 is separated from the process table 110 and the pressure cover 200 is installed on the process table 110, the support cover 210 connecting the driving unit and the pressure cover 200 is pressurized. Since it can be installed at equal intervals to 200, a uniform force is transmitted to the pressure cover 200. Therefore, the edge warpage of the wafer 10 can be minimized by the wafer warpage prevention device 100 according to the second embodiment than the wafer warpage prevention device 100 according to the first embodiment.

As described in detail above, pressing the edge of the wafer where the warpage occurs due to the guide ring with a predetermined force by using a pressure cover can prevent the edge of the wafer from bending, and thus the predetermined process is performed on the wafer in a more flat state. You can proceed.

Those skilled in the art or those skilled in the art that the wafer warpage prevention apparatus described in detail above is not limited to the equipment that performs the photolithography process, but can be applied to any equipment as long as the table on which the wafer is placed is used. Those of ordinary skill in the art will understand.

Claims (5)

  1. A process table on which a wafer to be processed is placed;
    A guide ring which protrudes from an upper surface of the process table at a predetermined height, is formed along an edge of the process table, and a portion of which overlaps an edge of the wafer;
    A plurality of pins formed at predetermined intervals inside the guide ring of the upper surface of the process table and protruding beyond the height at which the guide ring protrudes;
    A plurality of vacuum holes formed in the process table to generate a vacuum pressure for adsorbing the wafer; And
    And a press cover installed on an upper portion of the guide ring so as to be separated from the guide ring, and pressurizing the edge of the wafer at a predetermined pressure while bending / raising by a driving unit.
  2. The apparatus of claim 1, wherein an inner diameter of the guide ring is smaller than a diameter of the wafer, and an outer diameter of the guide ring is larger than a diameter of the wafer.
  3. 3. The pressure cover according to claim 2, wherein the pressure cover is formed in a ring shape, the inner diameter of the pressure cover is slightly smaller than the diameter of the center of the guide ring, and the outer diameter of the pressure cover is equal to the outer diameter of the guide ring. Wafer warpage prevention apparatus, characterized in that.
  4. The wafer deflection prevention apparatus according to claim 1, wherein the pressure cover is provided on the process table and ascends and descends by a driving unit provided on the process table.
  5. The method of claim 1, wherein the pressure cover is separated from the process table and positioned at an upper portion of the process table, and connected to a driving unit provided at an upper portion of the process table at a predetermined interval from the process table. Device.
KR1020040085961A 2004-10-26 2004-10-26 Wafer warpage protection apparatus KR20060036846A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102243446A (en) * 2010-05-13 2011-11-16 Asml荷兰有限公司 Substrate table, a lithographic apparatus, a method of flattening an edge of a substrate and a device manufacturing method
KR101296157B1 (en) * 2006-09-11 2013-08-19 주성엔지니어링(주) Substrate processing apparatus preventing film deposition at substrate edge and substrate processing method using the same
US8823918B2 (en) 2008-04-24 2014-09-02 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US9591738B2 (en) 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101296157B1 (en) * 2006-09-11 2013-08-19 주성엔지니어링(주) Substrate processing apparatus preventing film deposition at substrate edge and substrate processing method using the same
US9591738B2 (en) 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US10175585B2 (en) 2008-04-24 2019-01-08 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US8823918B2 (en) 2008-04-24 2014-09-02 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
KR101307566B1 (en) * 2010-05-13 2013-09-12 에이에스엠엘 네델란즈 비.브이. A substrate table, a lithographic apparatus, a method of flattening an edge of a substrate and a device manufacturing method
CN102243446B (en) * 2010-05-13 2014-08-06 Asml荷兰有限公司 Substrate table, a lithographic apparatus, a method of flattening an edge of a substrate and a device manufacturing method
CN102243446A (en) * 2010-05-13 2011-11-16 Asml荷兰有限公司 Substrate table, a lithographic apparatus, a method of flattening an edge of a substrate and a device manufacturing method

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