KR20050110793A - Organic electro-luminance device - Google Patents
Organic electro-luminance device Download PDFInfo
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- KR20050110793A KR20050110793A KR1020040035615A KR20040035615A KR20050110793A KR 20050110793 A KR20050110793 A KR 20050110793A KR 1020040035615 A KR1020040035615 A KR 1020040035615A KR 20040035615 A KR20040035615 A KR 20040035615A KR 20050110793 A KR20050110793 A KR 20050110793A
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- 238000000034 method Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 18
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 230000005525 hole transport Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910002695 AgAu Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
본 발명은 음극, 양극 및 이들 사이에 구성되는 R, G, B 유기 발광층으로 구성되는 유기 EL 소자에 있어서, 상기 R, G, B 발광층의 두께를 서로 다르게 구성하여 캐비티(cavity) 효과가 최적화되도록 하여 고효율의 색재현성이 높은 유기 EL 소자를 제작하기 위한 기술이다.The present invention provides an organic EL device including a cathode, an anode, and R, G, and B organic light emitting layers formed therebetween, so that the thickness of the R, G, and B light emitting layers are configured differently so that a cavity effect is optimized. To produce an organic EL device having high color reproducibility with high efficiency.
Description
본 발명은 유기전계발광소자에 관한 것으로 특히, 고효율의 색재현성이 좋은 유기 EL 소자를 제공하기 위한 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and in particular, a technique for providing an organic EL device having good color reproducibility with high efficiency.
탑-이미션 방식의 액티브 매트릭스형 유기 EL 디스플레이(Active Matrix Organic Light Emitting Diode)의 화소 부분은 크게 각 화소 부분을 스위칭(switching)해주는 스위칭용 박막트랜지스터와, 구동용 박막트랜지스터, 저장 커패시터, 화소전극(anode), 유기물층, 공통전극(cathode)으로 구성되어 있다.The pixel portion of the active matrix organic light emitting diode (LCD) of the top emission system is a switching thin film transistor that largely switches each pixel portion, a driving thin film transistor, a storage capacitor, and a pixel electrode. an anode, an organic material layer, and a common electrode.
이 중 화소부의 화소전극을 기준으로 한 종래 기술에 따른 유기 EL 소자의 단면을 도 1에 도시하였다. 1 is a cross-sectional view of the organic EL device of the related art based on the pixel electrode of the pixel portion.
본 발명의 내용이 유기 EL 소자가 액티브(active) 구동형이냐 패시브(passive) 구동형이냐에 관계없으므로, 액티브 구동형에서만 구성하는 TFT는 언급하지 않고, 화소전극부터 설명하겠다.Since the content of the present invention is not related to whether the organic EL element is an active driving type or a passive driving type, the TFT which constitutes only the active driving type will not be mentioned, but the pixel electrode will be described first.
도시하는 바와 같이, 제 1 절연막(1) 위의 화소전극(2)과, 상기 화소전극(2) 사이에서 화소전극(2)의 일부분을 덮는 제 2 절연막(3)과, 상기 화소전극(2) 및 제 2 절연막(3)상에 적층되는 정공주입층(4) 및 정공전달층(5)과, 상기 정공전달층(5)상에 형성되며 각각 R, G, B 광을 방출하는 R, G, B 발광층(6)(7)(8)과, R, G, B 발광층(6)(7)(8)을 포함하는 전면에 적층되는 전자전달층(9) 및 전자주입층(10)과, 상기 전자주입층(10) 위의 공통전극(11)과, 상기 유기물층(정공주입층, 정공전달층, R, G, B 발광층, 전자전달층, 전자주입층)을 산소나 수분으로부터 보호하는 보호막(12)으로 이루어진다. 도면에 나타낸 바와 같이, 종래 유기 EL 소자의 R, G, B 발광층(6)(7)(8)은 비슷한 두께를 갖는다.As shown, the pixel electrode 2 on the first insulating film 1, the second insulating film 3 covering a part of the pixel electrode 2 between the pixel electrode 2, and the pixel electrode 2. ) And a hole injection layer 4 and a hole transport layer 5 stacked on the second insulating film 3, and formed on the hole transport layer 5 to emit R, G, and B light, respectively; Electron transport layer 9 and electron injection layer 10 laminated on the entire surface including G, B light emitting layers 6, 7, 8, and R, G, B light emitting layers 6, 7, 8; And the common electrode 11 on the electron injection layer 10 and the organic layer (hole injection layer, hole transport layer, R, G, B light emitting layer, electron transport layer, electron injection layer) from oxygen or moisture Made of a protective film 12. As shown in the figure, the R, G, B light emitting layers 6, 7, 8 of the conventional organic EL elements have a similar thickness.
이 같은 유기 EL 소자의 제조과정은 다음과 같다.The manufacturing process of such an organic EL device is as follows.
도 2a 내지 도 2d는 종래 기술에 따른 유기 EL 소자의 제조공정 단면도이다.2A to 2D are sectional views of the manufacturing process of the organic EL device according to the prior art.
우선, 도 2a에 도시하는 바와 같이 제 1 절연막(1) 위에 화소전극(2)으로 Cr, Al, Mo, AgAu 등과 같은 반사율과 일함수(work function)가 높은 금속막을 증착하고 패터닝한다.First, as shown in FIG. 2A, a metal film having high reflectance and work function such as Cr, Al, Mo, AgAu, etc. is deposited and patterned on the pixel electrode 2 on the first insulating film 1.
이어서, 상기 패터닝된 화소전극(2) 사이에 화소전극(2)의 일부분이 덮이게 제 2 절연막(3)을 형성한다. Subsequently, a second insulating film 3 is formed to cover a portion of the pixel electrode 2 between the patterned pixel electrodes 2.
그리고, 도 2b에 도시된 바와 같이 정공주입층(4), 전공전달층(5)을 공통유기막으로 증착하고, 쉐도우 마스크(shadow mask)를 이용하여 R, G, B 발광층(6)(7)(8)을 각각 증착한다.As shown in FIG. 2B, the hole injection layer 4 and the hole transport layer 5 are deposited as a common organic film, and R, G, and B light emitting layers 6 and 7 are formed using a shadow mask. 8) are deposited respectively.
이때, 상기 R, G, B 발광층(6)(7)(8)을 비슷한 두께로 증착한다.At this time, the R, G, B light emitting layers 6, 7, 8 are deposited to a similar thickness.
그 다음으로 도 2c에 도시된 바와 같이, 전자전달층(9), 전자주입층(10) 등의 유기물층을 차례로 증착한다.Next, as illustrated in FIG. 2C, organic material layers such as the electron transport layer 9 and the electron injection layer 10 are sequentially deposited.
이어서, 알루미늄(Al)을 수 nm 증착한 후 Ag을 수 nm~수십 nm 증착하거나, Mg:Ag와 같은 금속을 수 nm~수십 nm 증착하여 공통전극(11)을 형성한다.Subsequently, after several nm of aluminum (Al) is deposited, Ag is deposited by several nm to several tens nm, or a metal such as Mg: Ag is deposited by several nm to several tens of nm to form a common electrode 11.
그리고, 도 2d와 같이 상기 유기물층들을 산소나 수분으로부터 보호하기 위하여 상기 공통전극(11)위에 보호막(12)을 형성하고, 도면에는 도시하지 않았지만 봉지재(sealant)와 투명 기판을 사용하여 보호캡을 붙여서 탑-이미션 방식의 유기 EL 소자를 완성한다.Also, as shown in FIG. 2D, the protective layer 12 is formed on the common electrode 11 to protect the organic layers from oxygen or moisture, and although not shown in the drawing, a protective cap is formed by using a sealant and a transparent substrate. The organic EL device of the top emission method is completed by pasting.
그러나, 상기한 종래의 유기 EL 소자는 다음과 같은 문제점이 있다. However, the conventional organic EL device described above has the following problems.
탑-이미션 방식에서는 화소전극과 공통전극이 반사율이 좋은 물질로 이루어져 있기 때문에 도 3에 도시하는 바와 같이, 캐비티(cavity) 현상이 발생하여 유기물층의 두께를 최적화하지 않을 경우 효율이 저하되고, 색재현율도 떨어지게 된다.In the top emission method, since the pixel electrode and the common electrode are made of a material having good reflectance, as shown in FIG. 3, a cavity phenomenon occurs and efficiency is lowered when the thickness of the organic layer is not optimized. The recall also drops.
도 4는 R, G, B 발광층의 두께에 따른 휘도 변화를 시뮬레이션한 그래프로, 최대 휘도를 내는 R, G, B 발광층의 두께가 서로 다름을 알 수 있다.4 is a graph simulating the change in luminance according to the thickness of the R, G, B light emitting layer, it can be seen that the thickness of the R, G, B light emitting layer that gives the maximum brightness is different.
즉, R 발광층의 경우 두께가 70일 때 최대 휘도를 나타내고, G 발광층은 두께가 50일 때, B 발광층은 두께가 35일 때 최대 휘도를 나타내고 있다. That is, the R light emitting layer shows the maximum luminance when the thickness is 70, the G light emitting layer shows the maximum luminance when the thickness is 50, and the B light emitting layer shows the maximum luminance when the thickness is 35.
따라서, 종래 기술에서와 같이 R, G, B 발광층을 비슷한 두께로 형성하면, 발광 효율이 저하되고, 색재현율이 떨어지게 됨은 자명하다.Therefore, as in the prior art, when the R, G, and B light emitting layers are formed to have similar thicknesses, it is obvious that the luminous efficiency is lowered and the color reproducibility is lowered.
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로 캐비티 현상이 최소화될 수 있도록 R, G, B 발광층의 두께를 서로 다르게 구성하여 유기 EL 소자의 발광 효율 및 색재현율을 향상시키는데 그 목적이 있다.The present invention has been made to solve the above problems, and the object of the present invention is to improve the luminous efficiency and color reproducibility of the organic EL device by configuring the thicknesses of the R, G, and B light emitting layers differently to minimize the cavity phenomenon. .
상기와 같은 목적을 달성하기 위한 본 발명에 따른 유기 EL 소자는 음극, 양극 및 이들 사이에 구성되는 R, G, B 유기 발광층으로 구성되는 유기 EL 소자에 있어서, 상기 R, G, B 발광층의 두께를 서로 다르게 구성하는 것을 특징으로 한다.The organic EL device according to the present invention for achieving the above object is a thickness of the R, G, B light emitting layer in the organic EL device consisting of a cathode, an anode, and R, G, B organic light emitting layer formed therebetween Characterized in that configured differently.
바람직하게, 상기 R, G, B 발광층의 두께를 R 발광층의 두께 > G 발광층의 두께 >B 발광층의 두께가 되도록 구성하는 것을 특징으로 한다.Preferably, the thickness of the R, G, B light emitting layer is configured so that the thickness of the R light emitting layer> the thickness of the G light emitting layer> the thickness of the B light emitting layer.
본 발명의 다른 목적, 특징 및 이점들은 첨부한 도면을 참조한 실시예들의 상세한 설명을 통해 명백해질 것이다.Other objects, features and advantages of the present invention will become apparent from the following detailed description of embodiments taken in conjunction with the accompanying drawings.
이하, 첨부된 도면을 참조하여 본 발명의 실시예의 구성과 그 작용을 설명하며, 도면에 도시되고 또 이것에 의해서 설명되는 본 발명의 구성과 작용은 적어도 하나의 실시예로서 설명되는 것이며, 이것에 의해서 상기한 본 발명의 기술적 사상과 그 핵심 구성 및 작용이 제한되지는 않는다.Hereinafter, with reference to the accompanying drawings illustrating the configuration and operation of the embodiment of the present invention, the configuration and operation of the present invention shown in the drawings and described by it will be described as at least one embodiment, By the technical spirit of the present invention described above and its core configuration and operation is not limited.
도 5는 본 발명에 따른 유기 EL 소자의 구조를 나타낸 도면이다.5 is a view showing the structure of an organic EL device according to the present invention.
도시된 바와 같이, 본 발명에서는 R, G, B 발광층(26)(27)(28)의 두께를 서로 다르게 구성하였다. 보다 정확하게 표현하면, 상기 R, G, B 발광층(26)(27)(28) 각각을 캐비티(cavity) 현상을 최소화할 수 있는 두께로 구성한 것으로, R 발광층(26)의 두께 > G 발광층(27)의 두께 > B 발광층(28)의 두께가 되도록 구성한 것이다.As shown, in the present invention, the thicknesses of the R, G, and B light emitting layers 26, 27, and 28 are different from each other. More precisely, the R, G, and B light emitting layers 26, 27, and 28 are formed to have a thickness capable of minimizing a cavity phenomenon, and the thickness of the R light emitting layer 26> G light emitting layer 27 Thickness of the light emitting layer 28).
이러한 R, G, B 발광층(26)(27)(28)을 갖는 유기 EL 소자의 구조는 제 1 절연막(21) 위의 화소전극(22)과, 상기 화소전극(22) 사이에서 화소전극(22)의 일부분을 덮는 제 2 절연막(23)과, 상기 화소전극(22) 및 제 2 절연막(23)상에 적층되는 정공주입층(24) 및 정공전달층(25)과, 상기 정공전달층(25)상에 형성되며 캐비티(cavity) 현상를 최소화할 수 있도록 서로 다른 두께를 갖고 형성되는 R, G, B 발광층(26)(27)(28)과, 상기 R, G, B 발광층(26)(27)(28)을 포함하는 전면에 적층되는 전자전달층(29) 및 전자주입층(30)과, 상기 전자주입층(30) 위의 공통전극(31)과, 상기 유기물층(정공주입층, 정공전달층, R, G, B 발광층, 전자전달층, 전자주입층)을 산소나 수분으로부터 보호하는 보호막(32)으로 구성된다.The structure of the organic EL element having the R, G, and B light emitting layers 26, 27, and 28 has a pixel electrode between the pixel electrode 22 on the first insulating film 21 and the pixel electrode 22. A second insulating film 23 covering a portion of the layer 22, a hole injection layer 24 and a hole transport layer 25 stacked on the pixel electrode 22 and the second insulating film 23, and the hole transport layer. R, G and B light emitting layers 26 and 27 and 28 formed on (25) and having different thicknesses to minimize cavity phenomena and the R, G and B light emitting layers 26 The electron transport layer 29 and the electron injection layer 30 stacked on the entire surface including the 27 and 28, the common electrode 31 on the electron injection layer 30, and the organic material layer (hole injection layer) And a protective film 32 for protecting the hole transport layer, the R, G, and B light emitting layers, the electron transport layer, and the electron injection layer) from oxygen or moisture.
이때, 상기 R, G, B 발광층(26)(27)(28)은 R 발광층(26)의 두께 > G 발광층(27)의 두께 > B 발광층(28)의 두께의 조건을 만족할 수 있도록 구성한다.In this case, the R, G, B light emitting layers 26, 27, 28 are configured to satisfy the conditions of the thickness of the R light emitting layer 26> the thickness of the G light emitting layer 27> the thickness of the B light emitting layer 28. .
이 같은 본 발명에 따른 유기 EL 소자의 제조 과정은 다음과 같다.The manufacturing process of the organic EL device according to the present invention is as follows.
도 6a 내지 도 6d는 본 발명에 따른 유기 EL 소자의 제조공정 단면도이다.6A to 6D are sectional views of the manufacturing process of the organic EL device according to the present invention.
우선, 도 6a에 도시하는 바와 같이 제 1 절연막(21) 위에 화소전극(22)으로 Cr, Al, Mo, AgAu 등과 같은 반사율과 일함수(work function)가 높은 금속막을 증착하고 패터닝한다.First, as shown in FIG. 6A, a metal film having a high reflectance and work function such as Cr, Al, Mo, AgAu, etc. is deposited and patterned on the pixel electrode 22 on the first insulating film 21.
이어서, 상기 패터닝된 화소전극(22) 사이에 화소전극(22)의 일부분이 덮이게 제 2 절연막(23)을 형성한다. Subsequently, a second insulating layer 23 is formed between the patterned pixel electrodes 22 to cover a portion of the pixel electrode 22.
그리고, 도 6b에 도시된 바와 같이 정공주입층(24), 전공전달층(25)을 공통유기막으로 증착하고, 쉐도우 마스크(shadow mask)를 이용하여 R, G, B 발광층(26)(27)(28)을 각각 증착한다.As shown in FIG. 6B, the hole injection layer 24 and the hole transport layer 25 are deposited as a common organic film, and R, G, and B light emitting layers 26 and 27 are formed by using a shadow mask. 28) are deposited respectively.
이때, 캐비티(cavity) 현상이 최소화 될 수 있도록 상기 R, G, B 발광층(26)(27)(28)의 두께를 서로 다르게 형성한다. 즉, 상기 R 발광층(26)의 두께 > G 발광층(27)의 두께 > B 발광층(28)의 두께가 되도록 형성한다.In this case, the thicknesses of the R, G, and B light emitting layers 26, 27, 28 are formed differently so that a cavity phenomenon may be minimized. That is, the thickness of the R light emitting layer 26> the thickness of the G light emitting layer 27> the thickness of the B light emitting layer 28 is formed.
그 다음으로 도 6c에 도시된 바와 같이, 전자전달층(29), 전자주입층(30) 등의 유기물층을 차례로 증착한다.Next, as illustrated in FIG. 6C, organic material layers such as the electron transport layer 29 and the electron injection layer 30 are sequentially deposited.
이어서, 알루미늄(Al)을 수 nm 증착한 후 Ag을 수 nm~수십 nm 증착하거나, Mg:Ag와 같은 금속을 수 nm~수십 nm 증착하여 공통전극(31)을 형성한다.Subsequently, after several nm of aluminum (Al) is deposited, Ag is deposited by several nm to several tens of nm, or a metal such as Mg: Ag is deposited by several nm to several tens of nm to form a common electrode 31.
그리고, 도 6d와 같이 상기 유기물층들을 산소나 수분으로부터 보호하기 위하여 상기 공통전극(31)위에 보호막(32)을 형성하고, 도면에는 도시하지 않았지만 봉지재(sealant)와 투명 기판을 사용하여 보호캡을 붙여서 탑-이미션 방식의 유기 EL 소자를 완성한다.In addition, as shown in FIG. 6D, the protective layer 32 is formed on the common electrode 31 to protect the organic layers from oxygen or moisture, and although not shown, a protective cap is formed by using a sealant and a transparent substrate. The organic EL device of the top emission method is completed by pasting.
상기와 같은 본 발명에서는 R, G, B 발광층의 두께를 서로 다르게 구성하여 캐비티(cavity) 현상을 최소화시킬 수 있으므로 캐비티 현상으로 인한 효율 저하 문제 및 색재현율 저하 문제를 해결할 수 있다. 따라서, 고효율의 색재현성이 우수한 디스플레이 제작이 가능해지는 효과가 있다.In the present invention as described above it is possible to minimize the cavity (cavity) by configuring the thickness of the R, G, B light emitting layer different from each other, it is possible to solve the problem of lowering efficiency and color reproducibility due to the cavity phenomenon. Therefore, there is an effect that it is possible to manufacture a display excellent in color reproduction of high efficiency.
이상 설명한 내용을 통해 당업자라면 본 발명의 기술 사상을 이탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다.Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.
따라서, 본 발명의 기술적 범위는 실시예에 기재된 내용으로 한정하는 것이 아니라 특허 청구범위에 의해서 정해져야 한다.Therefore, the technical scope of the present invention should not be limited to the contents described in the examples, but should be defined by the claims.
도 1은 종래 기술에 따른 유기 EL 소자의 구조를 나타낸 도면1 is a view showing the structure of an organic EL device according to the prior art
도 2a 내지 도 2d는 종래 기술에 따른 유기 EL 소자의 제조공정 단면도2A to 2D are sectional views of the manufacturing process of the organic EL device according to the prior art.
도 3은 유기 EL 소자의 캐비티 현상을 설명한 도면3 is an explanatory diagram illustrating a cavity phenomenon of an organic EL element.
도 4는 R, G, B 발광층의 두께에 따른 휘도변화를 나타낸 도면4 is a view showing a change in luminance according to the thickness of the R, G, B light emitting layer
도 5는 본 발명에 따른 유기 EL 소자의 구조를 나타낸 도면5 shows the structure of an organic EL device according to the present invention;
도 6은 본 발명에 따른 유기 EL 소자의 제조공정 단면도6 is a cross-sectional view of the manufacturing process of the organic EL device according to the present invention.
**도면의 주요 부분에 대한 부호 설명**** Description of the symbols for the main parts of the drawings **
21 : 제 1 절연막 22 : 화소전극21: first insulating film 22: pixel electrode
23 : 제 2 절연막 24 : 전공주입층23: second insulating film 24: major injection layer
25 : 정공전달층 26, 27, 28 : R, G, B 발광층25: hole transport layer 26, 27, 28: R, G, B light emitting layer
29 : 전자전달층 30 : 전자주입층29: electron transport layer 30: electron injection layer
31 : 공통전극 32 : 보호막31 common electrode 32 protective film
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8766282B2 (en) | 2012-10-22 | 2014-07-01 | Samsung Display Co., Ltd. | Organic light emitting display with luminescent layers having varying thicknesses to improve color reproducibility |
| US8786174B2 (en) | 2012-10-08 | 2014-07-22 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8786174B2 (en) | 2012-10-08 | 2014-07-22 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| US9337246B2 (en) | 2012-10-08 | 2016-05-10 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same using a solution process |
| US8766282B2 (en) | 2012-10-22 | 2014-07-01 | Samsung Display Co., Ltd. | Organic light emitting display with luminescent layers having varying thicknesses to improve color reproducibility |
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