KR20050068837A - 유기 전계발광소자 및 그 제조방법 - Google Patents
유기 전계발광소자 및 그 제조방법 Download PDFInfo
- Publication number
- KR20050068837A KR20050068837A KR1020030100652A KR20030100652A KR20050068837A KR 20050068837 A KR20050068837 A KR 20050068837A KR 1020030100652 A KR1020030100652 A KR 1020030100652A KR 20030100652 A KR20030100652 A KR 20030100652A KR 20050068837 A KR20050068837 A KR 20050068837A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- layer
- electrode
- organic light
- organic
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000011368 organic material Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 14
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 10
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 10
- 238000002347 injection Methods 0.000 claims description 36
- 239000007924 injection Substances 0.000 claims description 36
- 230000005525 hole transport Effects 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- -1 salt compound Chemical class 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052744 lithium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 150000002989 phenols Chemical class 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 6
- 150000004982 aromatic amines Chemical class 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 168
- 229910052760 oxygen Inorganic materials 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 9
- 238000004806 packaging method and process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 239000000872 buffer Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 2
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- XEPMXWGXLQIFJN-UHFFFAOYSA-K aluminum;2-carboxyquinolin-8-olate Chemical compound [Al+3].C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1 XEPMXWGXLQIFJN-UHFFFAOYSA-K 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- DKCPKDPYUFEZCP-UHFFFAOYSA-N 2,6-di-tert-butylphenol Chemical compound CC(C)(C)C1=CC=CC(C(C)(C)C)=C1O DKCPKDPYUFEZCP-UHFFFAOYSA-N 0.000 description 1
- TZIDHAKHQPCVEY-UHFFFAOYSA-N 2-phenoxy-1,3,2-dioxaphosphetan-4-one Chemical compound P1(OC(=O)O1)OC1=CC=CC=C1 TZIDHAKHQPCVEY-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UTGQNNCQYDRXCH-UHFFFAOYSA-N N,N'-diphenyl-1,4-phenylenediamine Chemical compound C=1C=C(NC=2C=CC=CC=2)C=CC=1NC1=CC=CC=C1 UTGQNNCQYDRXCH-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- IZKSYXAOKNLDLT-UHFFFAOYSA-K [K+].[K+].[K+].[O-]P([O-])([O-])=S Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=S IZKSYXAOKNLDLT-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- WAWVSIXKQGJDBE-UHFFFAOYSA-K trilithium thiophosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=S WAWVSIXKQGJDBE-UHFFFAOYSA-K 0.000 description 1
- HVLLSGMXQDNUAL-UHFFFAOYSA-N triphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)OC1=CC=CC=C1 HVLLSGMXQDNUAL-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (12)
- 기판 상에 형성된 제1 전극과;유기발광층을 사이에 두고 상기 제1 전극과 중첩되게 형성되는 제2 전극과;상기 제2 전극과 유기발광층 사이에 형성됨과 아울러 50~75% 정도의 유기물과 25~50% 정도의 금속분말이 혼합된 항산화물질이 포함된 유전체층을 구비하는 것을 특징으로 하는 유기전계발광소자.
- 제 1 항에 있어서,상기 유기물은 솔트(salt)계 화합물, 아세트산 이온(CH3COO-)화합물, 방향족 아민계 물질, 페놀 유도체 및 포스파이트계 물질 중 적어도 어느 하나인 것을 특징으로 하는 유기전계발광소자.
- 제 1 항에 있어서,상기 금속분말은 일함수가 낮은 Al, Li, Ca, Mg, Ba 중 적어도 어느 하나인 것을 특징으로 하는 유기전계발광소자.
- 제 1 항에 있어서,상기 유전체층의 두께는 10~80Å 정도인 것을 특징으로 하는 유기전계발광소자.
- 제 1 항에 있어서,상기 유기발광층은상기 제1 전극 상에 형성된 정공주입층과;상기 정공주입층 상에 형성된 정공수송층과;상기 정공수송층 상에 형성된 발광층과;상기 발광층 상에 형성된 전자 수송층과;상기 전자 수송층 상에 형성된 전자 주입층을 추가로 구비하는 것을 특징으로 하는 유기전계발광소자.
- 제 1 항에 있어서,상기 제1 전극 물질로는 인듐주석산화물(Indium Tin Oxide : ITO), 주석산화물(Tin Oxide : TO) 및 인듐아연산화물(Indium Zinc Oxide : IZO) 중 적어도 하나를 포함하는 것을 특징으로 하는 유기전계발광소자.
- 기판 상에 제1 전극을 형성하는 단계와;상기 제1 전극이 형성된 기판 상에 유기발광층을 형성하는 단계와;상기 유기발광층이 형성된 기판 상에 50~75% 정도의 유기물과 25~50% 정도의 금속분말이 혼합된 항산화물질을 포함하는 유전체층을 형성하는 단계와;상기 유전체층 상에 제2 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 유기전계발광소자의 제조방법.
- 제 7 항에 있어서,상기 유기물은 솔트(salt)계 화합물, 아세트산 이온(CH3COO-)화합물, 방향족 아민계 물질, 페놀 유도체 및 포스파이트계 물질 중 적어도 어느 하나인 것을 특징으로 하는 유기전계발광소자의 제조방법.
- 제 7 항에 있어서,상기 금속분말은 일함수가 낮은 Al, Li, Ca, Mg, Ba 중 적어도 어느 하나인 것을 특징으로 하는 유기전계발광소자의 제조방법.
- 제 7 항에 있어서,상기 유기발광층을 형성하는 단계는상기 제1 전극 상에 정공주입층을 형성하는 단계와;상기 정공주입층 상에 정공수송층을 형성하는 단계와;상기 정공수송층 상에 발광층을 형성하는 단계와;상기 발광층 상에 전자 수송층을 형성하는 단계와;상기 전자 수송층 상에 전자 주입층을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 유기전계발광소자의 제조방법.
- 제 7 항에 있어서,상기 유전체층의 두께는 10~80Å 정도인 것을 특징으로 하는 유기전계발광소자의 제조방법.
- 제 7 항에 있어서,상기 제1 전극 물질로는 인듐주석산화물(Indium Tin Oxide : ITO), 주석산화물(Tin Oxide : TO) 및 인듐아연산화물(Indium Zinc Oxide : IZO) 중 적어도 하나를 포함하는 것을 특징으로 하는 유기전계발광소자의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030100652A KR100542771B1 (ko) | 2003-12-30 | 2003-12-30 | 유기 전계발광소자 및 그 제조방법 |
US10/826,279 US7176622B2 (en) | 2003-12-30 | 2004-04-19 | Organic electro-luminescence device with dielectric layer having antioxidative material and fabricating method thereof |
CNA2004100455501A CN1638574A (zh) | 2003-12-30 | 2004-05-28 | 有机电致发光器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030100652A KR100542771B1 (ko) | 2003-12-30 | 2003-12-30 | 유기 전계발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050068837A true KR20050068837A (ko) | 2005-07-05 |
KR100542771B1 KR100542771B1 (ko) | 2006-01-20 |
Family
ID=34698789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030100652A KR100542771B1 (ko) | 2003-12-30 | 2003-12-30 | 유기 전계발광소자 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7176622B2 (ko) |
KR (1) | KR100542771B1 (ko) |
CN (1) | CN1638574A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100813851B1 (ko) * | 2007-04-05 | 2008-03-17 | 삼성에스디아이 주식회사 | 투명 전도성 산화막인 캐소드를 구비하는 유기전계발광소자및 그의 제조방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008054219A1 (de) * | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Organisches strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements |
JP5576296B2 (ja) * | 2010-03-01 | 2014-08-20 | パナソニック株式会社 | 有機el装置およびその製造方法 |
CN102446456B (zh) * | 2010-10-14 | 2015-03-04 | 上海本星电子科技有限公司 | 分层场致发光显示屏及基于分层场致发光的立体显示器 |
JP6772171B2 (ja) * | 2015-11-02 | 2020-10-21 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および固体撮像装置 |
US11889713B2 (en) * | 2018-10-02 | 2024-01-30 | Sony Semiconductor Solutions Corporation | Display device and electronic apparatus including seal part outside recess |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0754749B2 (ja) * | 1989-06-20 | 1995-06-07 | シャープ株式会社 | 薄膜el素子 |
US5652067A (en) * | 1992-09-10 | 1997-07-29 | Toppan Printing Co., Ltd. | Organic electroluminescent device |
JP3290375B2 (ja) * | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
KR100326535B1 (ko) * | 1999-02-09 | 2002-03-25 | 구자홍 | 플라즈마 디스플레이 패널의 전극 및 그 제조방법 |
US6642650B1 (en) * | 1998-11-10 | 2003-11-04 | Agfa-Gevaert | Refusable personal monitoring device |
JP3682465B2 (ja) * | 1999-03-31 | 2005-08-10 | 独立行政法人産業技術総合研究所 | 樹脂成形物表面層の改質方法およびそのための装置および表面層が改質された樹脂成形物、および樹脂成形物表面層の着色方法およびそのための装置および表面層が着色された樹脂成形物、および表面層の改質により機能性を付与された樹脂成形物 |
US7288420B1 (en) * | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
US6833668B1 (en) * | 1999-09-29 | 2004-12-21 | Sanyo Electric Co., Ltd. | Electroluminescence display device having a desiccant |
JP3409762B2 (ja) * | 1999-12-16 | 2003-05-26 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
TW484238B (en) * | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
US6924594B2 (en) * | 2000-10-03 | 2005-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6614175B2 (en) * | 2001-01-26 | 2003-09-02 | Xerox Corporation | Organic light emitting devices |
JP2002359071A (ja) * | 2001-04-20 | 2002-12-13 | Lg Phillips Lcd Co Ltd | 有機発光素子 |
US6753096B2 (en) * | 2001-11-27 | 2004-06-22 | General Electric Company | Environmentally-stable organic electroluminescent fibers |
US20050023972A1 (en) * | 2003-07-29 | 2005-02-03 | Lewandowski Mark A. | Method for printing electroluminescent lamps |
US20060060086A1 (en) * | 2004-09-21 | 2006-03-23 | Eastman Kodak Company | Desiccant having a reactive salt |
-
2003
- 2003-12-30 KR KR1020030100652A patent/KR100542771B1/ko active IP Right Grant
-
2004
- 2004-04-19 US US10/826,279 patent/US7176622B2/en not_active Expired - Lifetime
- 2004-05-28 CN CNA2004100455501A patent/CN1638574A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100813851B1 (ko) * | 2007-04-05 | 2008-03-17 | 삼성에스디아이 주식회사 | 투명 전도성 산화막인 캐소드를 구비하는 유기전계발광소자및 그의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN1638574A (zh) | 2005-07-13 |
US7176622B2 (en) | 2007-02-13 |
US20050140284A1 (en) | 2005-06-30 |
KR100542771B1 (ko) | 2006-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101356096B1 (ko) | 반도체장치 및 그의 제작방법 | |
KR100472502B1 (ko) | 유기 전계 발광 표시 장치 | |
KR100650046B1 (ko) | 고효율의 유기 전계 발광 소자 | |
JP4651916B2 (ja) | 発光装置の作製方法 | |
JP2000100572A (ja) | 電界発光素子 | |
KR100755398B1 (ko) | 유기전계발광표시소자 및 그 제조방법 | |
JP3852518B2 (ja) | 有機電界発光素子 | |
JP2004281087A (ja) | 有機elデバイスおよび有機elディスプレイ | |
JP2012506568A (ja) | ディスプレイ駆動部 | |
KR100542771B1 (ko) | 유기 전계발광소자 및 그 제조방법 | |
JP4381078B2 (ja) | デュアルモードディスプレイ | |
KR101318745B1 (ko) | 유기 전계발광표시소자 및 그 제조방법 | |
KR100631121B1 (ko) | 유기전계발광표시소자 및 그 제조방법 | |
KR100705311B1 (ko) | 유기 전계발광소자 및 그 제조방법 | |
KR100747310B1 (ko) | 유기전계발광소자 | |
KR100681042B1 (ko) | 유기전계발광소자 | |
KR20030078131A (ko) | 유기전계발광소자 | |
KR100680697B1 (ko) | 유기전계발광소자 | |
KR100382490B1 (ko) | 유기 전계발광 소자 | |
KR100900445B1 (ko) | 유기 전계발광표시소자 및 그 제조방법 | |
KR20050065948A (ko) | 유기전계발광 소자 | |
KR101001994B1 (ko) | 유기 전계발광소자 및 그 제조방법 | |
KR20130071542A (ko) | 유기전계 발광소자 및 이의 제조 방법 | |
JP2000223274A (ja) | 有機el素子 | |
JP2003323976A (ja) | 表示装置および電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121228 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20131227 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20141230 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20151228 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20161214 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20171218 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20181226 Year of fee payment: 14 |