KR20050003283A - 결정화 특성이 향상된 다결정 실리콘 박막의 제조방법 및이를 이용한 액정표시장치의 제조방법 - Google Patents
결정화 특성이 향상된 다결정 실리콘 박막의 제조방법 및이를 이용한 액정표시장치의 제조방법 Download PDFInfo
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- KR20050003283A KR20050003283A KR1020030044002A KR20030044002A KR20050003283A KR 20050003283 A KR20050003283 A KR 20050003283A KR 1020030044002 A KR1020030044002 A KR 1020030044002A KR 20030044002 A KR20030044002 A KR 20030044002A KR 20050003283 A KR20050003283 A KR 20050003283A
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- thin film
- silicon thin
- amorphous silicon
- crystallization
- polycrystalline silicon
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- 239000010409 thin film Substances 0.000 title claims abstract description 175
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 83
- 238000002425 crystallisation Methods 0.000 title claims abstract description 82
- 230000008025 crystallization Effects 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004973 liquid crystal related substance Substances 0.000 title description 17
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 38
- 239000013078 crystal Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 22
- 238000002844 melting Methods 0.000 description 14
- 230000008018 melting Effects 0.000 description 14
- 238000007711 solidification Methods 0.000 description 10
- 230000008023 solidification Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (11)
- 기판을 제공하는 단계;상기 기판 전면에 비정질 실리콘을 증착하는 단계;상기 비정질 실리콘을 제 1 방향으로 수평 결정화하는 단계; 및상기 결정화된 실리콘을 제 2 방향으로 수평 결정화하는 단계를 포함하는 다결정 실리콘 박막의 제조방법.
- 제 1 항에 있어서, 상기 비정질 실리콘을 증착하는 단계는 1000∼2000Å 두께로 증착하는 것을 특징으로 하는 다결정 실리콘 박막의 제조방법.
- 제 1 항에 있어서, 상기 수평 결정화는 순차적 수평 결정화인 것을 특징으로 하는 다결정 실리콘 박막의 제조방법.
- 제 1 항에 있어서, 상기 제 1 방향과 제 2 방향은 서로 수직인 것을 특징으로 하는 다결정 실리콘 박막의 제조방법.
- 제 1 항에 있어서, 비정질 실리콘의 증착 전에 버퍼층을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 다결정 실리콘 박막의 제조방법.
- 제 1 항에 있어서, 비정질 실리콘을 제 1 방향으로 수평 결정화한 후에 상기 결정화된 실리콘 전면을 식각하는 단계를 추가로 포함하는 것을 특징으로 하는 다결정 실리콘 박막의 제조방법.
- 제 6 항에 있어서, 상기 실리콘을 식각하는 단계는 실리콘 박막이 300∼600Å 두께로 남도록 식각하는 것을 특징으로 하는 다결정 실리콘 박막의 제조방법.
- 제 1 기판을 제공하는 단계;상기 기판 전면에 비정질 실리콘을 증착하는 단계;상기 비정질 실리콘을 일방향으로 수평 결정화하는 단계;상기 결정화된 실리콘 전면을 식각하는 단계;상기 결정화된 실리콘을 직교하는 다른 일방향으로 수평 결정화하는 단계; 및상기 결정화된 다결정 실리콘 박막을 액티브층으로 사용하여 박막 트랜지스터를 형성하는 단계를 포함하는 액정표시장치의 제조방법.
- 제 8 항에 있어서, 상기 제 1 기판과 컬러필터 기판인 제 2 기판을 합착하는 단계를 추가로 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.
- 제 8 항에 있어서, 상기 박막 트랜지스터를 형성하는 단계는상기 액티브층 영역 상에 제 1 절연막 및 게이트전극을 형성하는 단계;상기 액티브층의 소정 영역에 불순물을 주입하여 소오스/드레인영역을 정의하는 단계;상기 제 1 기판 전면에 제 2 절연막을 형성하는 단계;상기 액티브층의 영역 상에 소오스전극과 드레인전극을 형성하는 단계; 및상기 제 1 기판 전면에 보호막을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.
- 제 8 항에 있어서, 상기 수평 결정화는 순차적 수평 결정화인 것을 특징으로 하는 액정표시장치의 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030044002A KR100753568B1 (ko) | 2003-06-30 | 2003-06-30 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
US10/661,486 US7153762B2 (en) | 2003-06-30 | 2003-09-15 | Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same |
US11/406,282 US7635640B2 (en) | 2003-06-30 | 2006-04-19 | Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same |
US12/591,312 US8119469B2 (en) | 2003-06-30 | 2009-11-16 | Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020030044002A KR100753568B1 (ko) | 2003-06-30 | 2003-06-30 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
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KR20050003283A true KR20050003283A (ko) | 2005-01-10 |
KR100753568B1 KR100753568B1 (ko) | 2007-08-30 |
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KR (1) | KR100753568B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150021776A1 (en) * | 2011-01-31 | 2015-01-22 | United Microelectronics Corp. | Polysilicon layer |
Families Citing this family (16)
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KR100947180B1 (ko) * | 2003-06-03 | 2010-03-15 | 엘지디스플레이 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 |
KR100753568B1 (ko) * | 2003-06-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
JP2005123571A (ja) * | 2003-09-22 | 2005-05-12 | Sanyo Electric Co Ltd | トランジスタ基板、表示装置及びそれらの製造方法 |
KR100600853B1 (ko) * | 2003-11-17 | 2006-07-14 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
US7858450B2 (en) * | 2004-01-06 | 2010-12-28 | Samsung Electronics Co., Ltd. | Optic mask and manufacturing method of thin film transistor array panel using the same |
KR20060100602A (ko) * | 2005-03-17 | 2006-09-21 | 삼성전자주식회사 | 폴리실리콘 박막 트랜지스터의 제조 방법 및 그에 의해제조된 폴리실리콘 박막 트랜지스터를 포함하는 액정 표시장치 |
TWI390734B (zh) * | 2005-04-06 | 2013-03-21 | Samsung Display Co Ltd | 製造多晶矽薄膜之方法及製造具有多晶矽薄膜之薄膜電晶體之方法 |
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US20150021776A1 (en) * | 2011-01-31 | 2015-01-22 | United Microelectronics Corp. | Polysilicon layer |
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US7635640B2 (en) | 2009-12-22 |
US8119469B2 (en) | 2012-02-21 |
US20100129970A1 (en) | 2010-05-27 |
KR100753568B1 (ko) | 2007-08-30 |
US7153762B2 (en) | 2006-12-26 |
US20060189052A1 (en) | 2006-08-24 |
US20040266078A1 (en) | 2004-12-30 |
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