KR20040103911A - 전기화학적 에지 및 베벨 세정 공정 및 시스템 - Google Patents

전기화학적 에지 및 베벨 세정 공정 및 시스템 Download PDF

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Publication number
KR20040103911A
KR20040103911A KR10-2004-7009888A KR20047009888A KR20040103911A KR 20040103911 A KR20040103911 A KR 20040103911A KR 20047009888 A KR20047009888 A KR 20047009888A KR 20040103911 A KR20040103911 A KR 20040103911A
Authority
KR
South Korea
Prior art keywords
workpiece
edge
directing
wafer
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2004-7009888A
Other languages
English (en)
Korean (ko)
Inventor
베이졸불렌트엠
Original Assignee
누툴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/032,318 external-priority patent/US6833063B2/en
Application filed by 누툴 인코포레이티드 filed Critical 누툴 인코포레이티드
Publication of KR20040103911A publication Critical patent/KR20040103911A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
KR10-2004-7009888A 2001-12-21 2002-12-23 전기화학적 에지 및 베벨 세정 공정 및 시스템 Withdrawn KR20040103911A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/032,318 US6833063B2 (en) 2001-12-21 2001-12-21 Electrochemical edge and bevel cleaning process and system
US10/032,318 2001-12-21
US42493602P 2002-11-08 2002-11-08
US60/424,936 2002-11-08
PCT/US2002/041415 WO2003060963A2 (en) 2001-12-21 2002-12-23 Electrochemical edge and bevel cleaning process and system

Publications (1)

Publication Number Publication Date
KR20040103911A true KR20040103911A (ko) 2004-12-09

Family

ID=26708251

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7009888A Withdrawn KR20040103911A (ko) 2001-12-21 2002-12-23 전기화학적 에지 및 베벨 세정 공정 및 시스템

Country Status (8)

Country Link
US (1) US7029567B2 (https=)
EP (1) EP1456868A2 (https=)
JP (1) JP2005515629A (https=)
KR (1) KR20040103911A (https=)
CN (1) CN1636267A (https=)
AU (1) AU2002358291A1 (https=)
TW (1) TW594874B (https=)
WO (1) WO2003060963A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100709590B1 (ko) * 2006-01-04 2007-04-20 (주)소슬 클러스터형 베벨에치장치
KR100801711B1 (ko) * 2007-02-27 2008-02-11 삼성전자주식회사 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들

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US7686935B2 (en) * 1998-10-26 2010-03-30 Novellus Systems, Inc. Pad-assisted electropolishing
US7780867B1 (en) * 1999-10-01 2010-08-24 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
DE10128507B4 (de) * 2001-06-14 2008-07-17 Mtu Aero Engines Gmbh Verwendung einer Vorrichtung zum chemischen oder elektrochemischen Bearbeiten von Bauteilen
EP1473387A1 (de) * 2003-05-02 2004-11-03 Siemens Aktiengesellschaft Verfahren zur Entschichtung eines Bauteils
US9236279B2 (en) * 2003-06-27 2016-01-12 Lam Research Corporation Method of dielectric film treatment
US20050037620A1 (en) * 2003-08-15 2005-02-17 Berman Michael J. Method for achieving wafer contact for electro-processing
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US20090266707A1 (en) * 2005-08-26 2009-10-29 Novellus Systems, Inc. Pad-assisted electropolishing
US8100081B1 (en) 2006-06-30 2012-01-24 Novellus Systems, Inc. Edge removal of films using externally generated plasma species
US9732416B1 (en) 2007-04-18 2017-08-15 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction
WO2009124060A1 (en) * 2008-03-31 2009-10-08 Memc Electronic Materials, Inc. Methods for etching the edge of a silicon wafer
US8419964B2 (en) 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
US8414790B2 (en) * 2008-11-13 2013-04-09 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
EP2359390A1 (en) * 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8172646B2 (en) * 2009-02-27 2012-05-08 Novellus Systems, Inc. Magnetically actuated chuck for edge bevel removal
KR101198412B1 (ko) * 2009-12-30 2012-11-07 삼성전기주식회사 기판도금장치 및 기판도금방법
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
CN102623323A (zh) * 2012-04-01 2012-08-01 南通富士通微电子股份有限公司 半导体圆片喷液蚀刻系统及方法
CN103021937B (zh) * 2013-01-09 2015-07-08 华进半导体封装先导技术研发中心有限公司 化学腐蚀硅通孔面过电镀铜层的装置及方法
JP6186499B2 (ja) * 2013-05-09 2017-08-23 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
CN105088328B (zh) * 2014-05-07 2018-11-06 盛美半导体设备（上海）有限公司 电化学抛光供液装置
CN106206236B (zh) * 2016-08-30 2018-05-04 上海华力微电子有限公司 刻蚀设备以及用于去除晶背边缘薄膜的晶背边缘刻蚀方法
KR102454873B1 (ko) * 2018-02-01 2022-10-13 어플라이드 머티어리얼스, 인코포레이티드 도금 시스템의 세정 컴포넌트들 및 방법들
DE102018111858A1 (de) * 2018-05-17 2019-11-21 Nexwafe Gmbh Vorrichtung und Verfahren zum einseitigen Ätzen einer Halbleiterschicht eines Werkstücks
CN110867449B (zh) * 2019-11-12 2021-09-07 长江存储科技有限责任公司 三维存储器及其制备方法
KR20220107012A (ko) * 2019-11-27 2022-08-01 램 리써치 코포레이션 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거
JP7475945B2 (ja) * 2020-04-20 2024-04-30 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12134833B2 (en) * 2021-03-17 2024-11-05 Ebara Corporation Plating apparatus and cleaning method of contact member of plating apparatus
JP7696241B2 (ja) * 2021-07-06 2025-06-20 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN115461499B (zh) * 2021-11-04 2023-04-18 株式会社荏原制作所 镀覆装置及基板清洗方法
CN114855257B (zh) * 2022-04-20 2024-06-25 湖南华翔医疗科技有限公司 金属膜材的边缘抛光方法及金属膜材和应用

Family Cites Families (10)

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US5284554A (en) * 1992-01-09 1994-02-08 International Business Machines Corporation Electrochemical micromachining tool and process for through-mask patterning of thin metallic films supported by non-conducting or poorly conducting surfaces
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5865984A (en) * 1997-06-30 1999-02-02 International Business Machines Corporation Electrochemical etching apparatus and method for spirally etching a workpiece
US6056869A (en) * 1998-06-04 2000-05-02 International Business Machines Corporation Wafer edge deplater for chemical mechanical polishing of substrates
US6883063B2 (en) * 1998-06-30 2005-04-19 Emc Corporation Method and apparatus for initializing logical objects in a data storage system
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
US6610190B2 (en) * 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
JP2000331975A (ja) * 1999-05-19 2000-11-30 Ebara Corp ウエハ洗浄装置
US6309981B1 (en) * 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100709590B1 (ko) * 2006-01-04 2007-04-20 (주)소슬 클러스터형 베벨에치장치
KR100801711B1 (ko) * 2007-02-27 2008-02-11 삼성전자주식회사 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들
US8197637B2 (en) 2007-02-27 2012-06-12 Samsung Electronics Co., Ltd. Semiconductor fabrication apparatuses to perform semiconductor etching and deposition processes and methods of forming semiconductor device using the same
US8652342B2 (en) 2007-02-27 2014-02-18 Samsung Electronics Co., Ltd Semiconductor fabrication apparatuses to perform semiconductor etching and deposition processes and methods of forming semiconductor device using the same

Also Published As

Publication number Publication date
AU2002358291A1 (en) 2003-07-30
EP1456868A2 (en) 2004-09-15
JP2005515629A (ja) 2005-05-26
US20030141201A1 (en) 2003-07-31
CN1636267A (zh) 2005-07-06
WO2003060963A3 (en) 2004-04-22
US7029567B2 (en) 2006-04-18
WO2003060963A2 (en) 2003-07-24
TW594874B (en) 2004-06-21
TW200301520A (en) 2003-07-01
AU2002358291A8 (en) 2003-07-30

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