KR20040098138A - Method of manufacturing active matrix type electroluminescence display panel - Google Patents

Method of manufacturing active matrix type electroluminescence display panel Download PDF

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Publication number
KR20040098138A
KR20040098138A KR1020030030305A KR20030030305A KR20040098138A KR 20040098138 A KR20040098138 A KR 20040098138A KR 1020030030305 A KR1020030030305 A KR 1020030030305A KR 20030030305 A KR20030030305 A KR 20030030305A KR 20040098138 A KR20040098138 A KR 20040098138A
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KR
South Korea
Prior art keywords
openings
forming
glass substrate
insulating film
anode electrodes
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Application number
KR1020030030305A
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Korean (ko)
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KR100501427B1 (en
Inventor
김창남
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엘지전자 주식회사
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Priority to KR10-2003-0030305A priority Critical patent/KR100501427B1/en
Publication of KR20040098138A publication Critical patent/KR20040098138A/en
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Publication of KR100501427B1 publication Critical patent/KR100501427B1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
    • H01L51/52Details of devices
    • H01L51/5203Electrodes
    • H01L51/5221Cathodes, i.e. with low work-function material
    • H01L51/5228Cathodes, i.e. with low work-function material combined with auxiliary electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0021Formation of conductors

Abstract

The present invention relates to a method of manufacturing an active matrix organic EL display panel, comprising: a plurality of anode electrodes arranged in rows and columns and spaced apart from each other, and a plurality of thin film transistors electrically connected to the respective anode electrodes. Forming thin film transistors (TFTs) on top of the glass substrate; Forming insulating film openings on each of the anode electrodes, and forming an insulating film surrounding the plurality of anode electrodes and the thin film transistors on the glass substrate; Forming an auxiliary electrode on the insulating layer spaced apart from each of the openings by a predetermined distance (d1); Placing a shadow mask having shadow mask openings having the same shape as the openings on the glass substrate, and depositing and filling an RGB light emitting organic material into the insulating film openings; And forming a cathode electrode electrically connected to the auxiliary electrode on the front surface of the glass substrate.
Accordingly, the present invention has an effect of reducing the resistance of the cathode electrode by electrically contacting the cathode auxiliary electrode and the cathode electrode on the insulating film, thereby improving the performance of the device.

Description

Method of manufacturing active matrix organic EL display panel {Method of manufacturing active matrix type electroluminescence display panel}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an active matrix organic EL display panel, and more particularly, a cathode auxiliary electrode is formed on an insulating film, and the cathode auxiliary electrode and the cathode electrode are electrically contacted to form a cathode. The present invention relates to a method of manufacturing an active matrix organic EL display panel, which can improve the performance of a panel since the resistance of the electrode can be reduced.

Recently, an organic EL display is very thin, can be addressed in a matrix form, can be driven at a low voltage of 15V or less, and has a fast response speed, which is used as a display of a mobile phone.

In addition, the organic EL display can be formed on a flexible transparent substrate such as a wide viewing angle and plastic, which is attracting attention as a next-generation flat panel display (FPD).

FIG. 1 is a view illustrating a method of forming a full-color device by forming RGB pixels using a shadow mask, and using an anode electrode formed on the glass substrate 10. 11, a shadow mask 13 having a plurality of openings 13a formed on the anode electrode 11, and an organic material capable of realizing a full color is deposited to form the shadow mask 13. When the blue light emitting material 12a, the green light emitting material 12b, and the red light emitting material 12c are formed through the openings 13a of the), a full color device can be manufactured.

Of course, after depositing the organic material, a cathode electrode is formed on the entire surface of the substrate and additionally, a protective film deposition process and an encapsulation process are performed.

2A and 2B are plan views of a shadow mask for manufacturing a general full color organic EL display. First, as shown in FIG. 2A, a shadow mask in which a plurality of slits 21 are arranged is illustrated. 20), and a deformation occurs when a stress is applied to the shadow mask 20. In order to prevent this deformation, as shown in FIG. 2B, a bridge between the slot 31 and the slot ( There is a shadow mask 30 arranged to form 32.

When the organic EL display as described above is manufactured by using an active matrix substrate, a phenomenon in which luminance is uneven throughout the screen occurs due to the resistance of the upper common electrode.

In the top emission type organic EL display, since the light is emitted toward the upper electrode, the cathode electrode (upper electrode) must use a transparent conductive material, and the transparent conductive material ITO film has high resistance. There is a disadvantage of degrading the performance.

Accordingly, the present invention has been made to solve the problems described above, in order to reduce the resistance of the cathode of the organic EL display panel, to form a cathode auxiliary electrode on the insulating film, the cathode auxiliary electrode and the cathode electrode It is an object of the present invention to provide a method for manufacturing an active matrix organic EL display panel which can improve the performance of the panel by electrically contacting the film.

A preferred aspect for achieving the above object of the present invention is a plurality of anode electrodes arranged in columns and rows and spaced apart from each other, and a plurality of thin film transistors electrically connected to the respective anode electrodes. Forming thin film transistors (TFTs) on the glass substrate;

Forming insulating film openings on each of the anode electrodes, and forming an insulating film surrounding the plurality of anode electrodes and the thin film transistors on the glass substrate;

Forming an auxiliary electrode on the insulating layer spaced apart from each of the openings by a predetermined distance (d1);

Placing a shadow mask having shadow mask openings having the same shape as the openings on the glass substrate, and depositing and filling an RGB light emitting organic material into the insulating film openings;

A method of manufacturing an active matrix organic EL display panel including forming a cathode electrode electrically connected to the auxiliary electrode on a front surface of the glass substrate is provided.

FIG. 1 is a view illustrating a method of forming a full-color device by forming RGB pixels using a shadow mask in general.

2A and 2B are plan views of shadow masks for fabricating a typical full color organic EL display.

3A to 3E are manufacturing process diagrams of an active matrix organic EL display panel according to the present invention.

<Description of the symbols for the main parts of the drawings>

100: glass substrate 110: anode electrode

111: thin film transistor 122: metal line

130: insulating film 131: insulating film opening

150: auxiliary electrode 155: organic material

160: shadow mask opening 170: cathode electrode

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

3A through 3E are manufacturing process diagrams of an active matrix organic EL display panel according to the present invention. First, a plurality of anode electrodes 110 arranged in rows and columns and spaced apart from each other, respectively, A plurality of thin film transistors (TFTs) 111 electrically connected to the anode electrodes 110 are formed on the glass substrate 100 (FIG. 3A).

Here, in the glass substrate 100, horizontal and vertical metal lines 122 may be naturally formed to receive a current and a signal from an external device to drive the plurality of thin film transistors 111.

Afterwards, insulating layer openings 131 are formed on each of the anode electrodes 110, and the insulating layer 130 surrounding the plurality of anode electrodes 110 and the thin film transistors 111 is formed on the glass substrate. 100 formed on top.

Meanwhile, in the subsequent process of FIG. 3B, when the auxiliary electrode is formed on the insulating layer to reduce the resistance of the cathode, and then the organic material is deposited, a shadow phenomenon causes the auxiliary electrode between the pixel and the pixel (ie, between the opening and the opening). As the organic material is deposited, the organic material prevents electrical contact between the auxiliary electrode and the cathode electrode.

Therefore, by forming openings having protrusions 131a in the inner surface of the insulating layer 130, even if a shadow phenomenon occurs, an auxiliary electrode region where organic materials are not deposited is present, and the cathode electrode is connected to this region. You can do it.

Next, an auxiliary electrode 150 is formed on the insulating layer 130 spaced apart from the respective openings 131 by a predetermined distance d1 (FIG. 3C).

In this case, the auxiliary electrode 150 may use any one metal selected from Cr, Al, Cu, W, Au, Ni, and Ag having low resistance.

In addition, when the auxiliary electrode 150 uses a metal having a low reflectance, a black matrix effect may also be expected.

Subsequently, a shadow mask 160 having shadow mask openings 161 having the same shape as the openings 131 is formed on the glass substrate 100, and an RGB light emitting organic material 155 is disposed on the insulating film openings. 131 is deposited inside the filling (FIG. 3D).

Subsequently, as shown in FIG. 3E, a cathode electrode 170 is formed on the front surface of the substrate to be electrically connected to the auxiliary electrode 150.

In this case, the thickness of the auxiliary electrode 150 is preferably formed thicker than the thickness of the cathode electrode 170, the cathode electrode 170 is preferably formed of Mg-Ag alloy, Al or other conductive material. Do.

As described above, in the present invention, in order to prevent the organic material is also deposited between the pixel and the pixel due to the shadow phenomenon, the auxiliary electrode 150 and the cathode electrode 170 are not in electrical contact with each other. Also, there is a technical feature in the process of depositing an organic material using a shadow mask suitable for this.

Finally, any one protective film layer selected from an oxygen adsorption layer, a moisture adsorption layer, a moisture barrier layer, and a laminated film thereof is formed on the cathode electrode 170, and encapsulation is performed.

As described above, in order to reduce the resistance of the cathode of the organic EL display panel, the present invention forms a cathode auxiliary electrode on the insulating film, and electrically contacts the cathode auxiliary electrode and the cathode electrode. This has the effect of improving the performance of the panel.

Although the invention has been described in detail only with respect to specific examples, it will be apparent to those skilled in the art that various modifications and variations are possible within the spirit of the invention, and such modifications and variations belong to the appended claims.

Claims (4)

  1. Forming a plurality of anode electrodes arranged in rows and columns and spaced apart from each other, and a plurality of thin film transistors (TFTs) electrically connected to the respective anode electrodes on a glass substrate;
    Forming insulating film openings on each of the anode electrodes, and forming an insulating film surrounding the plurality of anode electrodes and the thin film transistors on the glass substrate;
    Forming an auxiliary electrode on the insulating layer spaced apart from each of the openings by a predetermined distance (d1);
    Placing a shadow mask having shadow mask openings having the same shape as the openings on the glass substrate, and depositing and filling an RGB light emitting organic material into the insulating film openings;
    And forming a cathode electrode electrically connected to the auxiliary electrode on the entire surface of the glass substrate.
  2. The method of claim 1,
    And a protrusion formed on inner surfaces of the insulating film openings.
  3. The method of claim 1,
    The thickness of the auxiliary electrode is formed to be thicker than the thickness of the cathode electrode manufacturing method of an active matrix organic EL display panel.
  4. The method according to any one of claims 1 to 3,
    The auxiliary electrode is a method of manufacturing an active matrix organic EL display panel, characterized in that using any one metal selected from Cr, Al, Cu, W, Au, Ni and Ag.
KR10-2003-0030305A 2003-05-13 2003-05-13 Method of manufacturing active matrix type electroluminescence display panel KR100501427B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR10-2003-0030305A KR100501427B1 (en) 2003-05-13 2003-05-13 Method of manufacturing active matrix type electroluminescence display panel

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Application Number Priority Date Filing Date Title
KR10-2003-0030305A KR100501427B1 (en) 2003-05-13 2003-05-13 Method of manufacturing active matrix type electroluminescence display panel

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KR20040098138A true KR20040098138A (en) 2004-11-20
KR100501427B1 KR100501427B1 (en) 2005-07-18

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101054531B1 (en) * 2005-11-30 2011-08-04 사천홍시현시기건유한공사 Organic light emitting device and its manufacturing method
US8004180B2 (en) 2008-06-12 2011-08-23 Samsung Mobile Display Co., Ltd. Organic light emitting display and its method of fabrication
US8698177B2 (en) 2011-05-11 2014-04-15 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
US9236423B2 (en) 2010-09-24 2016-01-12 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101967407B1 (en) 2012-10-08 2019-04-10 삼성디스플레이 주식회사 Organic light emitting diode display
KR20160096790A (en) 2015-02-05 2016-08-17 삼성디스플레이 주식회사 Organic light emitting diode display and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101054531B1 (en) * 2005-11-30 2011-08-04 사천홍시현시기건유한공사 Organic light emitting device and its manufacturing method
US8004180B2 (en) 2008-06-12 2011-08-23 Samsung Mobile Display Co., Ltd. Organic light emitting display and its method of fabrication
US9236423B2 (en) 2010-09-24 2016-01-12 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
US8698177B2 (en) 2011-05-11 2014-04-15 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same

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Publication number Publication date
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