KR20040097254A - Recording method using reaction and diffusion, recording medium recorded on using the recording method, and recording/reproducing apparatus for the recording medium - Google Patents

Recording method using reaction and diffusion, recording medium recorded on using the recording method, and recording/reproducing apparatus for the recording medium Download PDF

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Publication number
KR20040097254A
KR20040097254A KR1020047015559A KR20047015559A KR20040097254A KR 20040097254 A KR20040097254 A KR 20040097254A KR 1020047015559 A KR1020047015559 A KR 1020047015559A KR 20047015559 A KR20047015559 A KR 20047015559A KR 20040097254 A KR20040097254 A KR 20040097254A
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South Korea
Prior art keywords
recording
layer
dielectric layer
recording medium
information
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KR1020047015559A
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Korean (ko)
Inventor
김주호
토미나가준지
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삼성전자주식회사
독립행정법인 산업기술종합연구소
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Priority to JP2002092662A priority Critical patent/JP2003296985A/en
Priority to JPJP-P-2002-00092662 priority
Application filed by 삼성전자주식회사, 독립행정법인 산업기술종합연구소 filed Critical 삼성전자주식회사
Publication of KR20040097254A publication Critical patent/KR20040097254A/en

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045Recording
    • G11B7/00454Recording involving phase-change effects
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10502Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing characterised by the transducing operation to be executed
    • G11B11/10504Recording
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10502Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing characterised by the transducing operation to be executed
    • G11B11/10515Reproducing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10502Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing characterised by the transducing operation to be executed
    • G11B11/10528Shaping of magnetic domains, e.g. form, dimensions
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10584Record carriers characterised by the selection of the material or by the structure or form characterised by the form, e.g. comprising mechanical protection elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G11B11/10589Details
    • G11B11/10593Details for improving read-out properties, e.g. polarisation of light
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10595Control of operating function
    • G11B11/10597Adaptations for transducing various formats on the same or different carriers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403Layers; Shape, structure or physical properties thereof
    • G11B7/24065Layers assisting in recording or reproduction below the optical diffraction limit, e.g. non-linear optical layers or structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers

Abstract

A recording method capable of recording the phase change method and / or the magneto-optical method by generating a reaction diffusion between the dielectric layer and the recording layer by a laser beam, recording information using the method, and recording the information on the recording medium, and recording the recorded information Provided is a recording / playback apparatus capable of playing back. A recording method for recording information on a recording medium by a phase change method by using a change in absorption coefficient of a light constant due to diffusion of reaction between a recording layer and a dielectric layer. A recording method of recording information on a recording medium by generating a change by magneto-optical method, and recording the information on the recording medium by using a physical property in which the reaction diffusion portion swells and becomes convex when the reaction layer and the dielectric layer react. And a recording / reproducing apparatus capable of recording information on the recording medium and reproducing the recorded information.

Description

Recording method using reaction diffusion, and recording medium using the method and recording and reproducing apparatus using the recording medium {Recording method using reaction and diffusion, recording medium recorded on using the recording method, and recording / reproducing apparatus for the recording medium}

Conventional recording media can be broadly divided into magneto-optical recording media and phase-change recording media. In the magneto-optical recording medium, when linearly polarized light is incident on a magnetic material, such as an MD (Mini Disk), the information is rotated according to the magnetization size and the magnetization direction of the magnetic material. Recording medium considering reproduction. The phase change type recording medium, such as a digital versatile disk (DVD), has a difference in reflectance caused by a difference in absorption coefficient of optical constants depending on the amorphous and crystalline states of the recorded and unrecorded portions of the recording medium. It is a recording medium in consideration of the playback used.

1 is a diagram illustrating a conventional magneto-optical recording medium and a recording principle. As shown in Fig. 1, the recording medium is an aluminum (Al) layer 111 (which may use an Ag layer) serving as a reflective layer, a dielectric layer 112 of a dielectric such as SiN, or a recording of a magnetic substance such as TbFeCo. The layer 113, a dielectric layer 114 of a dielectric such as SiN, and a transparent polycarbonate layer 115 are sequentially stacked. A laser beam from the laser 118 having an output of about 5 mW to the recording medium is converged with the converging lens 119, and irradiated to the recording medium to heat the recording layer to 200 ° C to 400 ° C; At the same time, a magnetic field is generated in the portion to which the laser beam is irradiated by the magnetic coil 116 to which current is applied from the current source 117, and the direction of the magnetic spin is changed in the direction opposite to the magnetic spin direction in the unrecorded state. Therefore, the information recorded in the magneto-optical system can be reproduced in the magneto-optical system. Here, the magnetic spin direction of the unrecorded portion is shown in the downward direction, and the magnetic spin direction of the recorded portion is shown in the upward direction.

2 is a diagram showing a recording medium and a recording principle of a conventional phase change method. As shown in FIG. 2, the recording medium includes an Al layer 121 (which may be an Ag layer) serving as a reflective layer, a dielectric layer 122 of a dielectric such as ZnS-SiO 2 , a recording layer 123 such as GeSbTe, A dielectric layer 124 and a transparent polycarbonate layer 125 of a dielectric such as ZnS-SiO 2 are sequentially stacked. In addition, a protective film may be formed between the recording layer 123 and the dielectric layers 122 and 124 to stop the diffusion of reaction between the recording layer 123 and the dielectric layers 122 and 124. The laser beam from the laser 128 having an output of about 10 to 15 mW to the recording medium is converged by the converging lens 129 and irradiated to the recording medium to heat the recording layer 122 to about 600 ° C. By converting the irradiated portion into amorphous, the absorption coefficient k is made small regardless of the change in the refractive index n of the light constants n and k. Therefore, the information recorded by the phase change method can be reproduced by the phase change method. Here, decreasing the absorption coefficient k means that the transparency of the amorphous portion to which the laser beam is irradiated for recording the information is increased, thereby decreasing the reflectance. Generally, the absorption coefficient of the crystalline portion of the recording layer, which is an unrecorded portion, is about 3.0, but the absorption coefficient of the amorphous portion, on which information is recorded by irradiation of a laser beam, is about 1.5.

However, at present, the magneto-optical recording medium and the phase-change recording medium are different from each other. For this reason, the magneto-optical method and the phase change method each use different recording media.

As a phase change method, various methods for recording information on a recording medium using micro marks and reproducing the information recorded on the recording medium below the diffraction limit have been proposed. Among them, the reproducing method using the super-resolution near-field structure is “Applied Physics Letters, Vol. 73, No. 15, Oct. 1998 "and" Japanese Journal of Applied Physics, Vol. 39, Part I, No. 2B, 2000, pp. 980-981 ".

3 is a diagram illustrating a recording medium using a conventional super resolution near field structure. 3, the recording medium is a dielectric such as a dielectric of the dielectric layer (132-2), the recording layer (133), ZnS-SiO 2 or SiN which serves as a protective film, such as GeSbTe, such as the ZnS- SiO 2 The dielectric layer 134-2, the mask layer 137-2 of Sb or AgOx, the dielectric layer 134-1 of the dielectric such as ZnS-SiO 2 or SiN, and the transparent polycarbonate layer 135 are sequentially stacked. Have Here, when the mask layer 137-2 is Sb, the dielectric layers 134-1 and 134-2 in contact with the mask layer 137-2 are SiN, and when the mask layer 137-2 is AgOx, the mask Dielectric layers 134-1 and 134-2 in contact with layer 137-2 are ZnS—SiO 2 . The laser beam from the laser 138 having an output of about 10 to 15 mW to the recording medium is converged to the converging lens 139 and irradiated to the recording medium to heat the recording layer 133 to about 600 ° C. By converting the irradiated portion to amorphous, the absorption coefficient k is made small regardless of the change in the refractive index n in the light constants n and k. At this time, the mask layer 137-2 of the Sb or AgOx to which the laser beam is irradiated changes the Sb crystal or decomposes the AgOx to serve as a probe to the recording layer, thereby forming a near field structure. As a result, minute marks below the diffraction limit can be reproduced, and information can be reproduced in a super resolution near field structure even from a recording medium having a high recording density.

However, the super-resolution near field structure has a similar transition temperature between the mask layer and the recording layer, so that thermal stability is an important problem when reproducing recorded information. As a method to solve this problem, there is a method of lowering the transition temperature of the mask layer and a method of increasing the transition temperature of the recording layer. However, it is not easy to make a difference between the transition temperature of the mask layer and the recording layer due to the characteristics of the material.

The present invention relates to a recording method using a reaction diffusion, a recording medium using the method and a recording and reproducing apparatus using the recording medium, in particular, a dielectric layer and a rare earth transition metal or an alloy of a rare earth metal and a transition metal by a laser beam. Using the reaction diffusion of the configured recording layer, a recording method using a reaction diffusion capable of recording a phase change method and / or a magneto-optical method, a recording medium using the method, and recording information on the recording medium, the recording medium A recording and reproducing apparatus capable of reproducing information recorded in the present invention.

1 is a diagram illustrating a conventional magneto-optical recording medium and a recording principle.

2 is a diagram showing a recording medium and a recording principle of a conventional phase change method.

3 is a diagram illustrating a recording medium using a conventional super resolution near field structure.

4 is a diagram showing the structure of a recording medium according to the present invention.

5 is a view showing the structural change of the recording layer and the dielectric layer by the reaction diffusion between the recording layer and the dielectric layer.

6 (a) and 6 (b) are graphs showing the diffusion concentration of sulfur and the diffusion concentration of oxygen in the recording layer according to temperature, respectively.

7 is a view showing the performance by the recording medium of the present invention, Figure 7 (a) is a modulation (modulation) characteristics according to the recording power, Figure 7 (b) AFM (Atomic Force Microscope) photograph of the modulation measurement sample, And 7 (c) is a carrier to noise ratio (CNR) according to the mark length.

8 is a diagram showing the performance of the recording medium according to the super-resolution near-field structure of the present invention, Figure 8 (a) is the CNR according to the mark length of the recording medium of the super-resolution near-field structure, Figure 8 (b) is a super-resolution near-field CNR according to the number of times of reproducing the recording medium of the structure, FIG. 8 (c) shows the CNR according to the laser beam power when reproducing the recording medium of the super-resolution near field structure, and FIG. 8D shows the recording medium of the super-resolution near field structure according to the present invention. The recording mark status.

Figure 9 (a) is recorded by the reaction diffusion according to the present invention in the phase change method, the CNR according to the regeneration of the phase change method and the magneto-optical method, Figure 9 (b) is in response diffusion according to the present invention Recording by the phase change method and the magneto-optical method, and the CNR according to the reproduction of the phase change method and the magneto-optical method.

The present invention provides a recording method using a reaction diffusion capable of recording a phase change method and / or a magneto-optical method by reacting and diffusing a dielectric layer and a recording layer by irradiation of a laser beam, a recording medium using the method, and information on the recording medium. Provided is a recording / playback apparatus capable of reproducing information recorded on a recording medium by recording a recording medium. Accordingly, the present invention is applied to both the magneto-optical recording and phase-change recording and reproducing methods as one recording medium, and that when the information recorded on the recording medium is reproduced in a super-resolution near field structure, the transition temperature of the mask layer and the recording layer is changed. The problem of thermal stability due to the similarity can be solved, information can be recorded on the recording medium, and the information recorded on the recording medium can be reproduced below the diffraction limit.

In one aspect of the present invention, as described in claim 1, a recording method comprising recording information on a recording medium by a phase change method by varying the absorption coefficient of the optical constant due to the diffusion of reaction between the recording layer and the dielectric layer. Is provided.

In a particular embodiment of the phase change method recording method of claim 1, as described in claim 2, the recording layer is formed of a rare earth transition metal. In this case, as described in claim 3, the rare earth transition metal may be TbFeCo.

In another specific embodiment of the phase change recording method of claim 1, as described in claim 4, the recording layer is formed of an alloy of a rare earth metal and a transition metal.

In another specific embodiment of the phase change mode recording method of any one of claims 1 to 4, as described in claim 5, the reaction diffusion occurs at a temperature of 490 ° C-580 ° C.

In another specific embodiment of the phase change recording method according to any one of claims 1 to 5, as described in claim 6, a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. In this structure, the recorded information can be reproduced below the diffraction limit by utilizing the reaction diffusion of the recording layer and the dielectric layer serving as the protective film during the reaction diffusion and the crystal change of the mask layer.

In another embodiment of the phase change recording method according to any one of claims 1 to 5, as described in claim 7, a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. With this structure, the recorded information can be reproduced below the diffraction limit by utilizing the reaction diffusion of the recording layer and the dielectric layer serving as the protective film during the reaction diffusion and the decomposition of the mask layer.

In another embodiment of the phase change recording method according to any one of claims 1 to 5, as described in claim 8, the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure in which materials are mixed. .

In another aspect of the present invention, as described in claim 9, upon diffusion of reaction between a recording layer and a dielectric layer, a change in magnetic spin direction is generated to record information on a recording medium by a magneto-optical method. A recording method using the above is provided.

In a particular embodiment of the magneto-optical recording method of claim 9, as described in claim 10, the recording layer and the dielectric layer are formed by a simultaneous film, thereby forming a mixed structure comprising the recording layer material and the dielectric layer material. Have

In another specific embodiment of the magneto-optical recording method of claim 9 or 10, as described in claim 11, the recording layer is formed of a rare earth transition metal. In this case, as described in claim 12, the rare earth transition metal may be TbFeCo.

In another specific embodiment of the magneto-optical recording method of claim 9 or 10, as described in claim 13, the recording layer is formed of an alloy of a rare earth metal and a transition metal.

In another particular embodiment of the magneto-optical recording method of claim 9, as described in claim 14, the reaction diffusion occurs at a temperature of 400 ° C.-490 ° C. 15.

In another aspect of the present invention, as described in claim 15, the reaction diffusion is characterized by recording the information on the recording medium using a physical property in which the reaction diffusion portion swells and becomes convex during the reaction diffusion between the recording layer and the dielectric layer. The recording method used is provided.

In a particular embodiment of the recording method of claim 15, as described in claim 16, the recording layer is formed of a rare earth transition metal. In this case, as described in claim 17, the rare earth transition metal may be TbFeCo.

In another specific embodiment of the recording method of claim 15, as described in claim 18, the recording layer is formed of an alloy of a rare earth metal and a transition metal.

In another particular embodiment of the recording method of any one of claims 15 to 18, as described in claim 19, the reaction diffusion occurs at a temperature of 400 ° C.-490 ° C. 19.

In another specific embodiment of the recording method according to any one of claims 15 to 19, as described in claim 20, the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. As a result, information recorded using the diffusion of the reaction between the recording layer and the dielectric layer serving as the protective film during the diffusion of the reaction and the crystal change of the mask layer can be reproduced below the diffraction limit.

In another specific embodiment of the recording method according to any one of claims 15 to 19, as described in claim 21, the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. In this way, the recorded information can be reproduced below the diffraction limit by using the reaction diffusion of the recording layer and the dielectric layer serving as the protective film during the reaction diffusion and the decomposition of the mask layer.

In another specific embodiment of the recording method according to any one of claims 15 to 19, as described in claim 22, the recording layer and the dielectric layer are formed by a simultaneous film, thereby including the recording layer material and the dielectric layer material. It has a mixed structure.

In another aspect of the present invention, as described in claims 23 to 44, there is provided a recording medium recorded using the recording method of any one of claims 1 to 22.

In another aspect of the present invention, as described in claims 45 to 66, a recording and reproducing apparatus for a recording medium of claims 23 to 44 is provided. The recording and reproducing apparatus according to the present invention is a phase change recording and reproducing apparatus or a magneto-optical recording and reproducing apparatus. The recording and reproducing apparatus of the present invention can reproduce the information recorded on the recording medium by the phase change method by using the phase change recording and reproducing method or the magneto-optical recording and reproducing method. In the recording and reproducing apparatus according to the present invention, information can be recorded and reproduced by using a physical property in which the reaction diffusion portion swells and becomes convex during the reaction diffusion between the recording layer and the dielectric layer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings in which the present invention, which accomplishes the above-mentioned objects, and which performs the problems for eliminating the problems in the prior art.

4 is a diagram showing the structure of a recording medium according to the present invention.

As shown in Fig. 4, the recording medium has an affinity and reaction force with respect to the Al layer 221 (which may be an Ag layer) serving as a reflective layer, a dielectric layer 222 of a dielectric such as ZnS-SiO 2, and oxygen and sulfur. The recording layer 223 of the magnetic material such as TbFeCo, the dielectric layer 224 of the dielectric such as ZnS-SiO 2, and the transparent polycarbonate layer 225 are sequentially stacked. The material of the recording layer is a material capable of reacting and diffusing with the dielectric layer to form sulfides or oxides, such as rare earth transition metals or alloys of rare earth metals and transition metals. These materials are magneto-magnetic materials, Ag-Zn, Ag-Zn, W, W-Fe, W-Se, Fe, and the like.

The laser beam from the red laser having a wavelength of 635 nm or the blue laser 128 having a wavelength of 405 nm having an output of about 10 to 15 mW as shown in FIG. By irradiating the recording medium to the recording medium, the recording layer is heated to 490 ° C to 540 ° C to diffuse and spread the recording layer 223 and the dielectric layers 222 and 224. At this time, both reaction and diffusion occur. In the reaction diffusion recording layer, the absorption coefficient k of the optical constants (n, k) is lowered to almost zero, and in the portion where the laser beam is not irradiated, the absorption coefficient k of the optical constants (n, k) is about 4, so Information can be recorded on the recording medium by a change method.

Another embodiment of the recording medium according to the present invention may have a super resolution near field structure as shown in FIG. In this case, the Al layer 221 serving as the reflective layer is removed from the recording medium in FIG. 4, and instead of the dielectric layer 224, a dielectric layer serving as a protective film, a mask layer of Sb or AgOx, and a dielectric layer are sequentially stacked from the recording layer 223. Structure. Therefore, the information recorded using the diffusion of the reaction between the recording layer 223 during the laser beam irradiation and the dielectric layer serving as the protective film, and the crystal change occurring when this mask layer is Sb or decomposition occurring when AgOx is used. Can be reproduced below the diffraction limit. Therefore, since the difference between the transition temperature of Sb or AgOx in the mask layer and TbFeCo in the recording layer is large, information can be reproduced from the recording medium while solving the problem of conventional thermal safety. The portion caused by the crystal change of the mask layer serves as a probe during regeneration. Here, when the mask layer is Sb, the dielectric layer serving as the protective film, the dielectric layer contacting the mask layer is SiN, and when the mask layer is AgOx, the dielectric layer serving as the protective film and the dielectric layer contacting the mask layer are ZnS-SiO 2 .

The converging lens 119 receives a laser beam from a laser 118 having a wavelength of 635 nm or a wavelength of 405 nm having an output of about 10 to 15 mW in a magneto-optical manner to a recording medium having the structure as shown in FIG. 4. By irradiating the recording medium to the recording medium to heat the recording layer at 400 ° C to 490 ° C to diffuse and spread the recording layer 223 and the dielectric layers 222 and 224 and at the same time the magnetic coil to which current is applied from the current source 117 ( The magnetic field is generated in the portion to which the laser beam is irradiated by 116, and the direction of the magnetic spin is changed in the direction opposite to the magnetic spin direction in the unrecorded state. At this time, a reaction occurs but diffusion hardly occurs. In this way, since the magnetic spin direction of the recording layer in which the reaction diffusion is changed and the magnetic spin direction is changed and the portion where the laser beam is not irradiated is opposite, information can be recorded on the recording medium by the magneto-optical method.

Then, the laser beam from the blue laser 128 having a wavelength of 635 nm or the wavelength of 405 nm having an output of about 10 to 15 mW as shown in FIG. By irradiating onto the recording medium in step 129, the recording layer is heated to 400 ° C. to 490 ° C. to diffuse and spread the recording layer 223 and the dielectric layers 222 and 224. At this time, a reaction occurs but diffusion hardly occurs. The recording layer 223 and the dielectric layers 222 and 224 irradiated with the laser beam have a shape as shown in FIG. 5 by the reaction diffusion between the recording layer 223 and the dielectric layers 222 and 224. As such, the change in the physical characteristics of the laser beam irradiated and the convex portion where the reaction occurs is swelled and convex, the reflection angle according to the incident angle of the laser beam during reproduction is almost similar to the reflection angle according to the incident angle of the laser beam in the magneto-optical regeneration apparatus . Therefore, by using the physical property that the laser beam is irradiated and the portion where the reaction occurs is swelled up and convex, information can be recorded on the recording medium by a phase change method, and the information recorded on the recording medium can be reproduced by the magneto-optical recording and reproducing apparatus. This performance will be described later.

When the TbFeCo recording layer 223 and the ZnS-SiO 2 dielectric layers 222 and 224 of the recording medium according to the present invention are diffused by reaction, Tb 2 S 3 , FeS, CoS, CoS 2 , Co 2 S 3, etc. Is produced, TbO 2 , Tb 2 O 3 , FeO, Fe 2 O 3 , Fe 3 O 4 , CoO and the like are produced by the oxidation reaction, and α-Fe, α-Co, α-Tb and α are produced by crystallization. -Fe-Tb and the like are generated, Si, Fe, and Co diffuse into each other between the recording layer 223 and the dielectric layers 222 and 224, and sulfur and oxygen diffuse into the recording layer 223.

6 (a) and 6 (b) are graphs showing the diffusion concentration of sulfur and the diffusion concentration of oxygen in the recording layer according to temperature, respectively.

As shown in Fig. 6 (a), the sulfur concentration of the recording layer is saturated at 490 ° C and 510 ° C, and as shown in Fig. 6 (b), the oxygen concentration of the recording layer is not saturated at 490 ° C, but not at 510 ° C. In ° C, it is saturated. Therefore, the recording layer of the present invention having the super-resolution near field structure as shown in FIG. 3 is composed of a rare earth transition metal or an alloy of a rare earth metal and a transition metal, whereby the recording layer is formed of a mask layer composed of Sb or AgOx and a transition temperature. Since the difference is large, the information recorded on the recording medium can be reproduced in the ultra-resolution near field structure below the diffraction limit without the problem of thermal safety.

7 is a view showing the performance by the recording medium of the present invention, Figure 7 (a) is a modulation (modulation) characteristics according to the recording power, Figure 7 (b) AFM (Atomic Force Microscope) photograph of the modulation measurement sample, And 7 (c) is a carrier to noise ratio (CNR) according to the mark length. In addition, the modulation characteristic of FIG. 7 (a) shows the difference in reflectance by the absorption coefficient k in the irradiated region and the non-irradiated region converted into an electrical signal, and FIG. 7 (c) shows the recording medium according to the present invention in 15 mW. CNR at the time of information reproduction by a general phase change type reproducing apparatus after recording with a laser beam having a power of?

Figure 7 (a) by a recording medium according to the present invention, the recording layer formed of TbFeCo inserted between the dielectric layer formed of ZnSiO 2, as shown in, the recording layer formed of a GeSbTe inserted between the dielectric layer formed of ZnSiO 2 When the information recorded on the recording medium is reproduced, the modulation characteristic is higher than about 10 mW when the information recorded on the recording medium is reproduced, compared to the conventional magneto-optical recording medium in which a conventional phase change recording medium and a dielectric layer formed of TbFeCo are interposed between the SiN dielectric layers. It can be seen that it is excellent. As shown in Fig. 7 (b), it can be seen that as the recording power increases, the degree of response of the recording layer increases, resulting in a larger recording mark. As shown in Fig. 7 (c), the CNR is 45 dB or more at a mark length of 500 nm. As a result, the reflectance decreases rapidly due to the transparency of the recorded portion by irradiation of the laser beam, resulting in information reproduction characteristics. It can be seen that this is excellent.

8 is a diagram showing the performance of a recording medium according to the super-resolution near-field structure of the present invention, Figure 8 (a) is a CNR according to the mark length of the recording medium, Figure 8 (b) is a CNR according to the number of times of playback of the recording medium 8C shows the CNR according to the laser beam power during reproduction of the recording medium, and FIG. 8D shows the recording mark state of the recording medium.

Here, the conventional super resolution near field structure is shown in FIG. 3, and the super resolution near field structure according to the present invention uses the recording layer shown in FIG. 3 as TbFeCo of rare earth transition metal. The recording power of the laser beam on the recording medium is 10 mW in the conventional case and 15 mW in the case of the present invention. In addition, recording of the recording medium was performed by a red laser having a wavelength of 635 nm.

As shown in Fig. 8A, the information reproducing characteristic of the super resolution near field structure according to the present invention exhibits a high CNR of about 5 to 10 dB as a whole, compared to the information reproducing characteristic of the conventional super resolution near field structure. Accordingly, it can be seen that the information reproducing characteristic of the recording medium of the super resolution near field structure according to the present invention is superior to the information reproducing characteristic of the recording medium of the conventional super resolution near field structure. As shown in Fig. 8B, the information reproducing characteristic of the super-resolution near field structure according to the present invention maintains a constant CNR regardless of the number of times of reproducing, but the information reproducing characteristic of the conventional super resolution near field structure is predetermined. When the recovery time is over, the CNR drops sharply. In addition, as shown in FIG. 8 (c), the information reproducing characteristic of the super-resolution near field structure according to the present invention maintains a constant CNR when the laser beam power becomes 3.3 mW or more during information reproduction. The information reproduction characteristic has almost no margin of laser beam power during information reproduction. Accordingly, it can be seen that the recording medium having the super-resolution near field structure according to the present invention can be applied without being affected by the characteristic change of the recording medium by the manufacturer above a predetermined reproduction output. As shown in Fig. 8D, the recording mark appears clearly even in the recording mark of about 200 nm. Therefore, it can be seen that the use of a blue laser having a wavelength of 405 nm makes it possible to record information with a mark length of 100 nm or less.

Figure 9 (a) is recorded by the reaction diffusion according to the present invention in the phase change method, the CNR according to the regeneration of the phase change method and the magneto-optical method, Figure 9 (b) is in response diffusion according to the present invention Recording by the phase change method and the magneto-optical method, and the CNR according to the reproduction of the phase change method and the magneto-optical method. For the CNR measurement in Fig. 9A, a phase change type reproducing apparatus and a magneto-optical type reproducing apparatus used the measurement reproducing apparatus of Japan Pulse Tech. For the CNR measurement of FIG. 9 (b), a general phase change type reproducing apparatus having a wavelength of 630 nm and an aperture ratio (NA) of 0.60 was used as a phase change type reproducing apparatus, and a 780 nm reproducing apparatus of the magneto-optical type reproducing apparatus. A general magneto-optical reproducing apparatus having a wavelength and an aperture ratio (NA) of 0.53 was used.

As shown in Fig. 9A, when the mark length is 250 nm or more, both the phase change type reproducing apparatus and the magneto-optical type reproducing apparatus exhibit a CNR of about 40 dB or more. Therefore, it can be used in a phase change type reproducing apparatus and a magneto-optical type reproducing apparatus as one recording medium. In this case, the magneto-optical regeneration is caused by the fact that the reflection angle according to the incident angle of the laser beam, which is caused by the swelling and convex physical characteristics of the reaction diffusion portion, is similar to the Kerr effect. Further, when recording by reaction diffusion on the recording medium, if the magnetic spin direction is changed by the same magnetic field generating coil as in the conventional magneto-optical method, information can be reproduced at a higher CNR.

For the measurement of Fig. 9B, the magneto-optical recording and reproducing apparatus uses a wavelength of 780 nm and a laser of 0.53 NA, but if the wavelength is 630 nm and the NA of 0.60 is almost the same as that of the phase-changing reproducing apparatus, It can be seen that the performance. Further, at a mark length of 400 nm, both the phase change type reproducing apparatus and the magneto-optical type reproducing apparatus exhibit a CNR of about 40 dB or more. Therefore, it can be seen that one recording medium can be used for the phase change type reproduction apparatus and the magneto-optical type reproduction apparatus.

As described above, in the recording method according to the present invention, it is possible to record the phase change method and / or the magneto-optical method by generating the reaction diffusion of the dielectric layer and the recording layer by laser beam irradiation. When information is recorded on the recording medium according to the method of the present invention and the information recorded using the recording and reproducing apparatus of the present invention is reproduced, the information reproducing characteristic is superior as compared with the prior art. Also, the present invention can be applied to the magneto-optical recording and reproducing method and the phase change recording and reproducing method as one recording medium. In addition, the problem of the conventional thermal safety caused by the similarity of the transition temperature of the mask layer and the recording layer in the super resolution near field structure is solved, so that the information from the super resolution near field recording medium according to the present invention can be reproduced below the diffraction limit.

As described above, the present invention relates to a recording method using reaction diffusion, a recording medium using the method, and a recording and reproducing apparatus using the recording medium.

Claims (66)

  1. And recording information on the recording medium by a phase change method by changing the absorption coefficient of the optical constant due to the diffusion of reaction between the recording layer and the dielectric layer.
  2. The recording method as claimed in claim 1, wherein the recording layer is formed of a rare earth transition metal.
  3. 3. The recording method according to claim 2, wherein the rare earth transition metal is TbFeCo.
  4. The recording method as claimed in claim 1, wherein the recording layer is formed of an alloy of a rare earth metal and a transition metal.
  5. The method according to any one of claims 1 to 4, wherein the reaction diffusion occurs at a temperature of 490 ° C-580 ° C.
  6. 6. The method according to any one of claims 1 to 5, wherein the dielectric layer of the recording medium has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. And the recorded information is reproduced below the diffraction limit by using the reaction diffusion between the recording layer and the dielectric layer serving as the protective film and the crystal change of the mask layer.
  7. 6. The method according to any one of claims 1 to 5, wherein the dielectric layer of the recording medium has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. And the information recorded using the diffusion of reaction between the recording layer and the dielectric layer serving as the protective film and decomposition of the mask layer is reproduced below the diffraction limit.
  8. 6. The recording method according to any one of claims 1 to 5, wherein the recording layer and the dielectric layer are formed by a simultaneous film, and have a mixed structure including the recording layer material and the dielectric layer material.
  9. A recording method characterized by recording information on a recording medium by a magneto-optical method by generating a change in the magnetic spin direction upon diffusion of a reaction between the recording layer and the dielectric layer.
  10. 10. The recording method as claimed in claim 9, wherein the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure including the recording layer material and the dielectric layer material.
  11. The recording method according to claim 9 or 10, wherein the recording layer is formed of a rare earth transition metal.
  12. 12. The recording method according to claim 11, wherein the rare earth transition metal is TbFeCo.
  13. The recording method according to claim 9 or 10, wherein the recording layer is formed of an alloy of a rare earth metal and a transition metal.
  14. The recording method according to any one of claims 9 to 13, wherein the reaction diffusion occurs at a temperature of 400 ° C-490 ° C.
  15. And recording information on the recording medium by using a physical property in which the reaction diffusion portion swells and becomes convex when the reaction layer and the dielectric layer are spread.
  16. The recording method according to claim 15, wherein the recording layer is formed of a rare earth transition metal.
  17. 17. The recording method according to claim 16, wherein the rare earth transition metal is TbFeCo.
  18. 16. The recording method as claimed in claim 15, wherein the recording layer is formed of an alloy of a rare earth metal and a transition metal.
  19. 19. The recording method according to any one of claims 15 to 18, wherein the reaction diffusion occurs at a temperature of 400 ° C-490 ° C.
  20. 20. The recording medium according to any one of claims 15 to 19, wherein the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. And the recorded information is reproduced below the diffraction limit by using the reaction diffusion of the dielectric layer serving as the protective film and the crystal change of the mask layer.
  21. 20. The method according to any one of claims 15 to 19, wherein the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. And the recorded information is reproduced below a diffraction limit by using reaction diffusion of the dielectric layer serving as the protective film and decomposition of the mask layer.
  22. 20. The recording method according to any one of claims 15 to 19, wherein the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure including the recording layer material and the dielectric layer material.
  23. A recording medium characterized by recording information on a recording medium by a phase change method using a change in absorption coefficient of an optical constant due to diffusion of reaction between a recording layer and a dielectric layer.
  24. 24. The recording medium of claim 23, wherein the recording layer is formed of a rare earth transition metal.
  25. 25. The recording medium of claim 24, wherein the rare earth transition metal is TbFeCo.
  26. 24. The recording medium of claim 23, wherein the recording layer is formed of an alloy of a rare earth metal and a transition metal.
  27. 27. The recording medium of any one of claims 23 to 26, wherein the reaction diffusion occurs at a temperature of 490 ° C-580 ° C.
  28. 28. The recording layer according to any one of claims 23 to 27, wherein the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. And the recorded information is reproduced below a diffraction limit by using the reaction diffusion of the dielectric layer serving as the protective film and the crystal change of the mask layer.
  29. 28. The recording layer according to any one of claims 23 to 27, wherein the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. And recording information reproduced below a diffraction limit by using reaction diffusion of the dielectric layer serving as the protective film and decomposition of the mask layer.
  30. 28. The recording medium according to any one of claims 23 to 27, wherein the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure including the recording layer material and the dielectric layer material.
  31. A recording medium characterized by recording information on a recording medium by a magneto-optical method by generating a change in magnetic spin direction upon diffusion of a reaction between the recording layer and the dielectric layer.
  32. 32. The recording medium of claim 31, wherein the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure including the recording layer material and the dielectric layer material.
  33. 33. The recording medium of claim 31 or 32, wherein the recording layer is formed of a rare earth transition metal.
  34. 34. The recording medium of claim 33, wherein the rare earth transition metal is TbFeCo.
  35. 33. The recording medium of claim 31 or 32, wherein the recording layer is formed of an alloy of a rare earth metal and a transition metal.
  36. 36. The recording medium of any one of claims 31 to 35, wherein the reaction diffusion occurs at a temperature of 400 deg.
  37. And recording information on the recording medium by using a physical property in which the reaction diffusion portion swells and becomes convex during the reaction diffusion between the recording layer and the dielectric layer.
  38. 38. The recording medium of claim 37, wherein the recording layer is formed of a rare earth transition metal.
  39. The recording medium of claim 38, wherein the rare earth transition metal is TbFeCo.
  40. 38. The recording medium of claim 37, wherein the recording layer is formed of an alloy of a rare earth metal and a transition metal.
  41. 41. The recording medium of any one of claims 37-40, wherein the reaction diffusion occurs at a temperature of 400 [deg.] C.-490 [deg.] C.
  42. 42. The recording layer according to any one of claims 37 to 41, wherein the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. And the recorded information is reproduced below a diffraction limit by using the reaction diffusion of the dielectric layer serving as the protective film and the crystal change of the mask layer.
  43. 42. The recording layer according to any one of claims 37 to 41, wherein the dielectric layer has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. And recording information reproduced below a diffraction limit by using reaction diffusion of the dielectric layer serving as the protective film and decomposition of the mask layer.
  44. 42. The recording medium according to any one of claims 37 to 41, wherein the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure including the recording layer material and the dielectric layer material.
  45. A recording and reproducing apparatus for recording information on a recording medium by a phase change method using a change in absorption coefficient of an optical constant due to diffusion of reaction between a recording layer and a dielectric layer, and reproducing the information recorded on the recording medium.
  46. 46. The recording and reproducing apparatus according to claim 45, wherein the recording layer of the recording medium is formed of a rare earth transition metal.
  47. 47. The recording and reproducing apparatus according to claim 46, wherein the rare earth transition metal is TbFeCo.
  48. 46. The recording and reproducing apparatus according to claim 45, wherein the recording layer of the recording medium is formed of an alloy of rare earth metal and transition metal.
  49. 49. The recording and reproducing apparatus according to any one of claims 45 to 48, wherein the reaction diffusion in the recording medium occurs at a temperature of 490 deg.
  50. 50. The method according to any one of claims 45 to 49, wherein the dielectric layer of the recording medium has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. And recording information on the recording medium by using the reaction diffusion between the recording layer and the dielectric layer serving as the protective film and the crystal change of the mask layer, and reproducing information below the diffraction limit recorded on the recording medium. .
  51. 50. The method according to any one of claims 45 to 49, wherein the dielectric layer of the recording medium has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. And recording information on the recording medium by using reaction diffusion between the recording layer and the dielectric layer serving as the protective film and decomposition of the mask layer, and reproducing information below the diffraction limit recorded on the recording medium.
  52. 50. The recording and reproducing apparatus according to any one of claims 45 to 49, wherein the recording layer and the dielectric layer are formed by a simultaneous film, thereby having a mixed structure including the recording layer material and the dielectric layer material. .
  53. And a change in the magnetic spin direction upon the diffusion of the reaction between the recording layer and the dielectric layer to record information on the recording medium by the magneto-optical method, and to reproduce the information recorded on the recording medium.
  54. 54. The recording and reproducing apparatus according to claim 53, wherein the recording layer and the dielectric layer of the recording medium have a mixed structure including the recording layer material and the dielectric layer material by being formed by a simultaneous film.
  55. 55. The recording and reproducing apparatus according to claim 53 or 54, wherein the recording layer of the recording medium is formed of a rare earth transition metal.
  56. 56. The recording and reproducing apparatus according to claim 55, wherein the rare earth transition metal is TbFeCo.
  57. 55. The recording and reproducing apparatus according to claim 53 or 54, wherein the recording layer of the recording medium is formed of an alloy of rare earth metal and transition metal.
  58. 58. The recording and reproducing apparatus according to any one of claims 53 to 57, wherein the reaction diffusion in the recording medium occurs at a temperature of 400 deg. C-490 deg.
  59. And recording information on the recording medium using physical properties in which the reaction diffusion portion swells and becomes convex during the reaction diffusion between the recording layer and the dielectric layer, and reproduces the information recorded on the recording medium.
  60. 60. The recording and reproducing apparatus according to claim 59, wherein the recording layer of the recording medium is formed of a rare earth transition metal.
  61. 61. The recording and reproducing apparatus according to claim 60, wherein the rare earth transition metal is TbFeCo.
  62. 60. The recording and reproducing apparatus according to claim 59, wherein the recording layer of the recording medium is formed of an alloy of rare earth metal and transition metal.
  63. 63. The recording and reproducing apparatus according to any one of claims 59 to 62, wherein the reaction diffusion in the recording medium occurs at a temperature of 400 deg. C-490 deg.
  64. 64. The method according to any one of claims 59 to 63, wherein the dielectric layer of the recording medium has a structure in which a dielectric layer serving as a protective film, a mask layer of Sb, and a dielectric layer are sequentially stacked from the recording layer. And recording information on the recording medium by using the reaction diffusion between the recording layer and the dielectric layer serving as the protective film and the crystal change of the mask layer, and reproducing the information recorded on the recording medium below the diffraction limit. .
  65. 64. The method according to any one of claims 59 to 63, wherein the dielectric layer of the recording medium has a structure in which a dielectric layer serving as a protective film, a mask layer of AgOx, and a dielectric layer are sequentially stacked from the recording layer. And recording information on the recording medium by using a reaction diffusion between the recording layer and the dielectric layer serving as the protective film and decomposition of the mask layer, and reproducing the information recorded on the recording medium below the diffraction limit.
  66. 64. The recording and reproducing apparatus according to any one of claims 59 to 63, wherein the recording layer and the dielectric layer are formed by a simultaneous film to have a mixed structure including the recording layer material and the dielectric layer material. .
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100765748B1 (en) * 2005-02-28 2007-10-15 삼성전자주식회사 High-density information storage medium, method for manufacturing the same, apparatus and method for recording/reproducing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050052606A (en) * 2003-11-28 2005-06-03 삼성전자주식회사 Information storage medium, method and apparatus for reproducing of information recorded in the same
JP4581047B2 (en) * 2004-08-24 2010-11-17 独立行政法人産業技術総合研究所 Pattern forming material, pattern forming method, and optical disc
JP5082404B2 (en) * 2006-11-22 2012-11-28 ソニー株式会社 Read-only optical disk medium and manufacturing method thereof
AU2007331564A1 (en) * 2006-12-14 2008-06-19 Thomson Licensing Optical storage medium comprising tracks with different width, and respective production method
AT528757T (en) * 2008-03-07 2011-10-15 Thomson Licensing Optical storage medium with multi-stage data layer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024927A (en) * 1988-10-06 1991-06-18 Ricoh Company, Ltd. Information recording medium
JPH09180276A (en) * 1995-12-25 1997-07-11 Sharp Corp Magneto-optical recording medium and reproducing method therefor
JP3660072B2 (en) * 1996-09-26 2005-06-15 シャープ株式会社 Magneto-optical recording medium, recording method thereof, and magneto-optical recording apparatus
EP0965984B1 (en) * 1997-02-28 2008-08-20 Asahi Kasei Kabushiki Kaisha Method of manufacturing a phase change recording medium, and method of recording information on the same
JPH10293942A (en) * 1997-04-18 1998-11-04 Nec Corp Optical information recording medium and optical information recording, reproducing and erasing method
JPH1166611A (en) * 1997-08-21 1999-03-09 Tdk Corp Optical recording medium
KR100338756B1 (en) * 1999-07-20 2002-05-30 윤종용 Phase change optical medium
WO2001093259A1 (en) * 2000-05-31 2001-12-06 Matsushita Electric Industrial Co., Ltd. Magneto optical recording medium, manufacturing method for the same, and method and apparatus for reading the same
JP2002025138A (en) * 2000-07-13 2002-01-25 National Institute Of Advanced Industrial & Technology Optical recording medium and optical recording and reproducing equipment
JP2003022580A (en) * 2001-05-02 2003-01-24 Victor Co Of Japan Ltd Information recording carrier, method of manufacturing information recording carrier, information recording carrier reproducing device and information recording carrier recording device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100765748B1 (en) * 2005-02-28 2007-10-15 삼성전자주식회사 High-density information storage medium, method for manufacturing the same, apparatus and method for recording/reproducing the same

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EP1488417A1 (en) 2004-12-22
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US20050207327A1 (en) 2005-09-22
CN1656547A (en) 2005-08-17
AU2003218811A1 (en) 2003-10-13
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WO2003083853A1 (en) 2003-10-09
EP1488417A4 (en) 2007-11-21

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