KR20040030445A - 유기 전계 발광 소자 및 그 제조 방법 - Google Patents
유기 전계 발광 소자 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20040030445A KR20040030445A KR10-2003-7005946A KR20037005946A KR20040030445A KR 20040030445 A KR20040030445 A KR 20040030445A KR 20037005946 A KR20037005946 A KR 20037005946A KR 20040030445 A KR20040030445 A KR 20040030445A
- Authority
- KR
- South Korea
- Prior art keywords
- anode
- layer
- light emitting
- silver
- cathode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000010410 layer Substances 0.000 claims abstract description 128
- 239000004332 silver Substances 0.000 claims abstract description 67
- 229910052709 silver Inorganic materials 0.000 claims abstract description 66
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 64
- 238000002347 injection Methods 0.000 claims abstract description 62
- 239000007924 injection Substances 0.000 claims abstract description 62
- 239000010409 thin film Substances 0.000 claims abstract description 50
- 239000000956 alloy Substances 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 35
- 239000012044 organic layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000284 extract Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 230000010363 phase shift Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 6
- 230000001965 increasing effect Effects 0.000 abstract description 6
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 8-quinolinol aluminum Chemical compound 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (8)
- 양극과 음극 사이에 발광층을 포함하는 1층 이상의 유기층을 구비하며, 상기 발광층에서 발생한 빛을 상기 음극의 측으로부터 추출하는 유기 전계 발광 소자에 있어서,상기 양극은, 은(Ag) 또는 은을 포함하는 합금으로 구성된 것을 특징으로 하는 유기 전계 발광 소자.
- 제1항에 있어서,상기 양극은, 은과, 팔라듐(Pd)과, 구리(Cu)를 포함하는 합금으로 구성된 것을 특징으로 하는 유기 전계 발광 소자.
- 제1항에 있어서,상기 양극은, 은을 50 질량% 이상 포함하는 것을 특징으로 하는 유기 전계 발광 소자.
- 제1항에 있어서,상기 양극과 상기 유기 전계 발광층 사이에, 상기 양극보다도 일 함수가 높은 재료로 이루어지는 정공 주입용 박막층을 더 구비한 것을 특징으로 하는 유기 전계 발광 소자.
- 제1항에 있어서,상기 음극은, 상기 발광층에서 발생한 빛에 대하여 반투과성의 반투과성 전극을 갖고,이 반투과성 전극과 상기 양극은, 상기 발광층에서 발생한 빛을 공진시키는 공진기의 공진부를 구성하고 있는 것을 특징으로 하는 유기 전계 발광 소자.
- 제5항에 있어서,상기 양극 및 상기 반투과성 전극에서 생기는 반사광의 위상 시프트를 Φ, 상기 양극과 상기 반투과성 전극 간의 광학적 거리를 L, 상기 음극의 측으로부터 추출하는 빛의 스펙트럼의 피크 파장을 λ로 하면,상기 광학적 거리 L은, 수학식 2를 만족시키는 플러스의 최소값인 것을 특징으로 하는 유기 전계 발광 소자.
- 양극과 음극 사이에 발광층을 포함하는 1층 이상의 유기층을 구비하여, 상기 발광층에서 발생한 빛을 상기 음극의 측으로부터 추출하는 유기 전계 발광 소자의 제조 방법에 있어서,기판의 위에, 은(Ag) 또는 은을 포함하는 합금으로 이루어지는 양극을 성막하는 공정과,이 양극의 위에, 양극보다도 일 함수가 높은 재료로 이루어지는 정공 주입용 박막층을, 불활성 가스 분위기 내에서 성막하는 공정과,이 정공 주입용 박막층의 위에, 발광층을 포함하는 1층 이상의 유기층을 형성하는 공정과,이 유기층의 위에, 음극을 형성하는 공정을 포함하는 것을 특징으로 하는 유기 전계 발광 소자의 제조 방법.
- 양극과 음극 사이에 발광층을 포함하는 1층 이상의 유기층을 구비하여, 상기 발광층에서 발생한 빛을 상기 음극의 측으로부터 추출하는 유기 전계 발광 소자의 제조 방법에 있어서,기판의 위에, 은(Ag) 또는 은을 포함하는 합금으로 이루어지는 양극을 성막하는 공정과,이 양극의 위에, 양극보다도 일 함수가 높은 재료로 이루어지는 정공 주입용 박막층을, 형성 예정 영역에 대응하여 개구를 갖는 에리어 마스크를 이용하여 성막하는 공정과,이 정공 주입용 박막층의 위에, 발광층을 포함하는 1층 이상의 유기층을 형성하는 공정과,이 유기층의 위에, 음극을 형성하는 공정을 포함하는 것을 특징으로 하는 유기 전계 발광 소자의 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001264410A JP3804858B2 (ja) | 2001-08-31 | 2001-08-31 | 有機電界発光素子およびその製造方法 |
JPJP-P-2001-00264410 | 2001-08-31 | ||
PCT/JP2002/006354 WO2003022011A1 (fr) | 2001-08-31 | 2002-06-25 | Dispositif electroluminescent organique et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040030445A true KR20040030445A (ko) | 2004-04-09 |
KR100868599B1 KR100868599B1 (ko) | 2008-11-13 |
Family
ID=19091012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037005946A KR100868599B1 (ko) | 2001-08-31 | 2002-06-25 | 유기 전계 발광 소자 및 그 제조 방법 |
Country Status (7)
Country | Link |
---|---|
US (6) | US7285905B2 (ko) |
EP (1) | EP1422977A4 (ko) |
JP (1) | JP3804858B2 (ko) |
KR (1) | KR100868599B1 (ko) |
CN (1) | CN100416885C (ko) |
TW (1) | TW557638B (ko) |
WO (1) | WO2003022011A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100855487B1 (ko) * | 2006-09-12 | 2008-09-01 | 엘지디스플레이 주식회사 | 전계발광소자 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3804858B2 (ja) | 2001-08-31 | 2006-08-02 | ソニー株式会社 | 有機電界発光素子およびその製造方法 |
JP2003109775A (ja) * | 2001-09-28 | 2003-04-11 | Sony Corp | 有機電界発光素子 |
US7488986B2 (en) * | 2001-10-26 | 2009-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20040140757A1 (en) * | 2003-01-17 | 2004-07-22 | Eastman Kodak Company | Microcavity OLED devices |
US20040149984A1 (en) * | 2003-01-31 | 2004-08-05 | Eastman Kodak Company | Color OLED display with improved emission |
JP4362696B2 (ja) | 2003-03-26 | 2009-11-11 | ソニー株式会社 | 発光素子およびその製造方法、ならびに表示装置 |
CN101499516B (zh) * | 2003-03-26 | 2011-05-04 | 索尼株式会社 | 发光器件及其制造方法和显示单元 |
JP4170138B2 (ja) | 2003-04-28 | 2008-10-22 | 三菱電機株式会社 | 有機電界発光素子およびその製造方法 |
KR100527193B1 (ko) * | 2003-06-03 | 2005-11-08 | 삼성에스디아이 주식회사 | 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 |
US6917159B2 (en) * | 2003-08-14 | 2005-07-12 | Eastman Kodak Company | Microcavity OLED device |
JP4997688B2 (ja) * | 2003-08-19 | 2012-08-08 | セイコーエプソン株式会社 | 電極、薄膜トランジスタ、電子回路、表示装置および電子機器 |
JP2005093329A (ja) * | 2003-09-19 | 2005-04-07 | Sony Corp | 表示素子およびこれを用いた表示装置 |
JP4428979B2 (ja) * | 2003-09-30 | 2010-03-10 | 三洋電機株式会社 | 有機elパネル |
JP4497881B2 (ja) * | 2003-09-30 | 2010-07-07 | 三洋電機株式会社 | 有機el素子および有機elパネル |
KR100611157B1 (ko) * | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조방법 |
DE10359156B4 (de) * | 2003-12-16 | 2007-08-30 | Schott Ag | Anzeigevorrichtung |
US7157156B2 (en) * | 2004-03-19 | 2007-01-02 | Eastman Kodak Company | Organic light emitting device having improved stability |
JP2006086069A (ja) * | 2004-09-17 | 2006-03-30 | Three M Innovative Properties Co | 有機エレクトロルミネッセンス素子及びその製造方法 |
US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP5072243B2 (ja) * | 2005-03-25 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 発光装置 |
US8729795B2 (en) * | 2005-06-30 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US7994711B2 (en) * | 2005-08-08 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
KR100712181B1 (ko) * | 2005-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그 제조방법 |
JP4823685B2 (ja) * | 2005-12-28 | 2011-11-24 | 京セラ株式会社 | El装置及びその製造方法 |
TWI338393B (en) * | 2006-02-03 | 2011-03-01 | Lg Chemical Ltd | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method |
WO2007089117A1 (en) | 2006-02-03 | 2007-08-09 | Lg Chem. Ltd. | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method |
US20080125821A1 (en) * | 2006-11-07 | 2008-05-29 | Gregory Blomquist | Advanced cardiac life support apparatus and method |
JP5007246B2 (ja) | 2008-01-31 | 2012-08-22 | 三菱電機株式会社 | 有機電界発光型表示装置及びその製造方法 |
KR101153037B1 (ko) * | 2008-09-19 | 2012-06-04 | 파나소닉 주식회사 | 유기 일렉트로 루미네슨스 소자 및 그 제조 방법 |
JP4647708B2 (ja) * | 2008-09-30 | 2011-03-09 | パナソニック株式会社 | 有機elデバイスおよびその製造方法 |
JP2010192413A (ja) | 2009-01-22 | 2010-09-02 | Sony Corp | 有機電界発光素子および表示装置 |
KR101156429B1 (ko) * | 2009-06-01 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 |
JP5526610B2 (ja) * | 2009-06-09 | 2014-06-18 | 凸版印刷株式会社 | 有機elディスプレイの構造とその製造方法 |
KR101065413B1 (ko) * | 2009-07-03 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
WO2011005319A1 (en) * | 2009-07-09 | 2011-01-13 | Xunlight Corporation | Back reflector for photovoltaic devices |
KR101213493B1 (ko) | 2010-04-13 | 2012-12-20 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 그 제조방법 |
US9105847B2 (en) * | 2010-06-24 | 2015-08-11 | Joled Inc. | Organic EL display and method of manufacturing the same |
US9012927B2 (en) * | 2011-11-30 | 2015-04-21 | Canon Kabushiki Kaisha | Display device |
CN103219472B (zh) * | 2013-04-19 | 2015-12-02 | 云南北方奥雷德光电科技股份有限公司 | 顶部发光oled器件阳极结构及其制备工艺 |
US10181573B2 (en) * | 2014-07-11 | 2019-01-15 | Lg Display Co., Ltd. | Organic light-emitting diode display device and method of fabricating the same |
KR101705406B1 (ko) * | 2014-09-11 | 2017-02-10 | 경희대학교 산학협력단 | 갈륨을 포함하는 p형 산화물 반도체를 이용한 유기 발광 다이오드 및 이의 제조 방법 |
CN105118924B (zh) * | 2015-07-29 | 2017-12-01 | 苏州大学 | 一种防短路的顶发射oled器件及其制备方法 |
CN105355800A (zh) * | 2015-10-27 | 2016-02-24 | 深圳市华星光电技术有限公司 | 一种有源矩阵有机发光二极体基板及其显示装置 |
CN108336240A (zh) * | 2017-01-20 | 2018-07-27 | 昆山工研院新型平板显示技术中心有限公司 | Oled结构以及柔性oled显示面板 |
CN108550713B (zh) * | 2018-04-28 | 2020-03-13 | 上海天马有机发光显示技术有限公司 | 有机发光显示面板及其显示装置 |
JPWO2019220283A1 (ja) | 2018-05-18 | 2021-07-01 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器および照明装置 |
DE112019005793T5 (de) * | 2018-11-19 | 2021-09-02 | Sony Group Corporation | Lichtemissionselement, ansteuerungsvorrichtung und mobileinrichtung |
CN111180500B (zh) * | 2020-02-26 | 2023-10-24 | 京东方科技集团股份有限公司 | 显示用基板及电致发光显示装置 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3492548A (en) * | 1967-09-25 | 1970-01-27 | Rca Corp | Electroluminescent device and method of operating |
US4940505A (en) * | 1988-12-02 | 1990-07-10 | Eaton Corporation | Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation |
JPH0541286A (ja) * | 1991-03-01 | 1993-02-19 | Fuji Electric Co Ltd | エレクトロルミネセンス素子 |
US5443922A (en) * | 1991-11-07 | 1995-08-22 | Konica Corporation | Organic thin film electroluminescence element |
JPH06112529A (ja) * | 1992-09-29 | 1994-04-22 | Ricoh Co Ltd | 有機薄膜発光ダイオード素子 |
JP2797883B2 (ja) | 1993-03-18 | 1998-09-17 | 株式会社日立製作所 | 多色発光素子とその基板 |
JPH06283271A (ja) | 1993-03-26 | 1994-10-07 | Ricoh Co Ltd | 有機電界発光素子 |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
US5780174A (en) * | 1995-10-27 | 1998-07-14 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Micro-optical resonator type organic electroluminescent device |
US5981092A (en) * | 1996-03-25 | 1999-11-09 | Tdk Corporation | Organic El device |
JPH10289784A (ja) * | 1997-04-14 | 1998-10-27 | Mitsubishi Chem Corp | 有機電界発光素子 |
GB9718516D0 (en) * | 1997-09-01 | 1997-11-05 | Cambridge Display Tech Ltd | Methods of Increasing the Efficiency of Organic Electroluminescent Devices |
JPH1187052A (ja) * | 1997-09-09 | 1999-03-30 | Futaba Corp | 有機エレクトロルミネッセンス素子 |
JPH1197182A (ja) * | 1997-09-24 | 1999-04-09 | Pioneer Electron Corp | 発光ディスプレイパネル |
US5994836A (en) * | 1998-02-02 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | Organic light emitting diode (OLED) structure and method of making same |
WO1999039393A1 (en) * | 1998-02-02 | 1999-08-05 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
US6210817B1 (en) * | 1998-04-30 | 2001-04-03 | Fuji Photo Film Co., Ltd. | Styryl compound, process of the production thereof and organic luminous element using the same |
TW521537B (en) * | 1998-05-08 | 2003-02-21 | Idemitsu Kosan Co | Organic electroluminescence element |
EP0966050A3 (de) * | 1998-06-18 | 2004-11-17 | Osram Opto Semiconductors GmbH & Co. OHG | Organische Leuchtdiode |
JP2000077190A (ja) * | 1998-08-28 | 2000-03-14 | Futaba Corp | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2000100564A (ja) * | 1998-09-21 | 2000-04-07 | Sony Corp | 有機elディスプレイの製造方法 |
JP2000147540A (ja) * | 1998-11-17 | 2000-05-26 | Toppan Printing Co Ltd | 電極基板およびその製造方法 |
US6380558B1 (en) * | 1998-12-29 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP2000223273A (ja) * | 1999-01-27 | 2000-08-11 | Tdk Corp | 有機el素子 |
JP4247863B2 (ja) * | 1999-07-12 | 2009-04-02 | ソニー株式会社 | 電子部品用金属材料、電子部品用配線材料、電子部品用電極材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品 |
US6366017B1 (en) * | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
JP2001043980A (ja) * | 1999-07-29 | 2001-02-16 | Sony Corp | 有機エレクトロルミネッセンス素子及び表示装置 |
JP2001102172A (ja) * | 1999-09-30 | 2001-04-13 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
US6710525B1 (en) * | 1999-10-19 | 2004-03-23 | Candescent Technologies Corporation | Electrode structure and method for forming electrode structure for a flat panel display |
EP1096568A3 (en) * | 1999-10-28 | 2007-10-24 | Sony Corporation | Display apparatus and method for fabricating the same |
JP2001143864A (ja) * | 1999-11-16 | 2001-05-25 | Fuji Photo Film Co Ltd | 発光素子及びその製造方法 |
KR100740793B1 (ko) * | 1999-11-22 | 2007-07-20 | 소니 가부시끼 가이샤 | 표시 소자 |
JP2001155867A (ja) * | 1999-11-30 | 2001-06-08 | Tdk Corp | 有機el表示装置 |
JP3614335B2 (ja) * | 1999-12-28 | 2005-01-26 | 三星エスディアイ株式会社 | 有機el表示装置ならびにその製造方法 |
JP4250345B2 (ja) * | 2000-02-08 | 2009-04-08 | キヤノン株式会社 | 導電性膜形成用組成物、導電性膜の形成方法および画像形成装置の製造方法 |
US6559594B2 (en) * | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2001223086A (ja) * | 2000-02-10 | 2001-08-17 | Fuji Photo Film Co Ltd | 有機発光素子及びそれを用いる画像形成方法 |
TW484238B (en) * | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
JP2001341296A (ja) * | 2000-03-31 | 2001-12-11 | Seiko Epson Corp | インクジェット法による薄膜形成方法、インクジェット装置、有機el素子の製造方法、有機el素子 |
US6608449B2 (en) * | 2000-05-08 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent apparatus and method of manufacturing the same |
US7339317B2 (en) * | 2000-06-05 | 2008-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having triplet and singlet compound in light-emitting layers |
US6623728B2 (en) * | 2000-06-30 | 2003-09-23 | Unilever Home & Personal Care Usa Division Of Conopco, Inc. | Cosmetic skin care compositions and containing gum mastic |
WO2002004200A1 (en) * | 2000-07-07 | 2002-01-17 | Scapa Tapes North America, Inc. | Acrylic foam-like tape |
US6517958B1 (en) | 2000-07-14 | 2003-02-11 | Canon Kabushiki Kaisha | Organic-inorganic hybrid light emitting devices (HLED) |
WO2002015294A2 (en) | 2000-08-16 | 2002-02-21 | Massachusetts Institute Of Technology | High efficiency solid state light-emitting device and method of generating light |
US6677059B2 (en) * | 2000-12-12 | 2004-01-13 | Tdk Corporation | EL device and making method |
WO2002063701A1 (en) | 2001-01-03 | 2002-08-15 | Dow Global Technologies Inc. | Electroluminescent device having anode array and reflective cathode focusing feature |
US6551725B2 (en) * | 2001-02-28 | 2003-04-22 | Eastman Kodak Company | Inorganic buffer structure for organic light-emitting diode devices |
US6787063B2 (en) * | 2001-03-12 | 2004-09-07 | Seiko Epson Corporation | Compositions, methods for producing films, functional elements, methods for producing functional elements, methods for producing electro-optical devices and methods for producing electronic apparatus |
JP2002329576A (ja) * | 2001-04-27 | 2002-11-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
JP2003031375A (ja) | 2001-07-16 | 2003-01-31 | Rohm Co Ltd | 有機el表示装置 |
US6750609B2 (en) * | 2001-08-22 | 2004-06-15 | Xerox Corporation | OLEDs having light absorbing electrode |
JP3804858B2 (ja) * | 2001-08-31 | 2006-08-02 | ソニー株式会社 | 有機電界発光素子およびその製造方法 |
JP3724725B2 (ja) * | 2001-11-01 | 2005-12-07 | ソニー株式会社 | 表示装置の製造方法 |
JP2003305421A (ja) | 2002-04-15 | 2003-10-28 | Toray Eng Co Ltd | メタルマスクの洗浄方法およびその装置 |
-
2001
- 2001-08-31 JP JP2001264410A patent/JP3804858B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-25 EP EP02736178A patent/EP1422977A4/en not_active Withdrawn
- 2002-06-25 KR KR1020037005946A patent/KR100868599B1/ko active IP Right Grant
- 2002-06-25 WO PCT/JP2002/006354 patent/WO2003022011A1/ja active Application Filing
- 2002-06-25 CN CNB028028163A patent/CN100416885C/zh not_active Expired - Lifetime
- 2002-06-25 US US10/399,030 patent/US7285905B2/en not_active Expired - Lifetime
- 2002-08-26 TW TW091119249A patent/TW557638B/zh not_active IP Right Cessation
-
2007
- 2007-09-06 US US11/899,431 patent/US8937428B2/en not_active Expired - Fee Related
-
2014
- 2014-12-11 US US14/567,290 patent/US9240564B2/en not_active Expired - Fee Related
-
2015
- 2015-12-14 US US14/967,548 patent/US9722201B2/en not_active Expired - Fee Related
-
2016
- 2016-05-25 US US15/163,877 patent/US10020460B2/en not_active Expired - Lifetime
-
2018
- 2018-06-11 US US16/005,152 patent/US10522781B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100855487B1 (ko) * | 2006-09-12 | 2008-09-01 | 엘지디스플레이 주식회사 | 전계발광소자 |
Also Published As
Publication number | Publication date |
---|---|
US9722201B2 (en) | 2017-08-01 |
US20150137104A1 (en) | 2015-05-21 |
CN100416885C (zh) | 2008-09-03 |
KR100868599B1 (ko) | 2008-11-13 |
US8937428B2 (en) | 2015-01-20 |
US9240564B2 (en) | 2016-01-19 |
US10522781B2 (en) | 2019-12-31 |
CN1481656A (zh) | 2004-03-10 |
US20160268539A1 (en) | 2016-09-15 |
US20180294430A1 (en) | 2018-10-11 |
US20040021414A1 (en) | 2004-02-05 |
US20160233454A1 (en) | 2016-08-11 |
US10020460B2 (en) | 2018-07-10 |
JP2003077681A (ja) | 2003-03-14 |
JP3804858B2 (ja) | 2006-08-02 |
WO2003022011A1 (fr) | 2003-03-13 |
EP1422977A1 (en) | 2004-05-26 |
TW557638B (en) | 2003-10-11 |
US7285905B2 (en) | 2007-10-23 |
EP1422977A4 (en) | 2009-06-17 |
US20080067927A1 (en) | 2008-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100868599B1 (ko) | 유기 전계 발광 소자 및 그 제조 방법 | |
JP3783937B2 (ja) | 有機el素子 | |
EP3007243B1 (en) | Light-emitting device and process for production thereof | |
JP4817789B2 (ja) | 有機el表示装置 | |
US20020036297A1 (en) | Low absorption sputter protection layer for OLED structure | |
JPH10144957A (ja) | 有機発光ダイオード構造中の光学的に透明な拡散バリアおよび上部電極 | |
JP3944906B2 (ja) | 発光素子およびこれを用いた表示装置 | |
JPH11329750A (ja) | 有機el表示装置とその製造方法 | |
US6696699B2 (en) | Luminescent display device and method of manufacturing same | |
WO2023014897A1 (en) | Descending etching resistance in advanced substrate patterning | |
TW201419518A (zh) | 有機發光裝置及其製造方法 | |
JP2005093329A (ja) | 表示素子およびこれを用いた表示装置 | |
KR100793314B1 (ko) | 다층 구조의 애노드 및 상기 애노드를 포함하는 상향 발광유기 발광소자 | |
JP2012252863A (ja) | 発光装置の製造方法 | |
JP2002198182A (ja) | 有機el素子 | |
KR100784487B1 (ko) | 유기 전계 발광 소자의 전극 형성 방법 및 그를 이용하여제조된 유기 전계 발광 소자 | |
JP3533695B2 (ja) | エレクトロルミネッセンス素子 | |
JP4343676B2 (ja) | 有機発光素子 | |
JP2010010054A (ja) | 有機elパネル | |
CN113748530A (zh) | 具有活性有机膜的改良的顶部发光装置和处理基板的方法 | |
JP2008117697A (ja) | 表示装置用配線電極、有機el表示装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121029 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20131025 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20141024 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20151030 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20161028 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20171027 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20181029 Year of fee payment: 11 |