KR20040015506A - Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same - Google Patents

Abstract

PURPOSE: A dual panel-type organic electroluminescent device and a manufacturing method thereof are provided to improve the yield rate of productivity by forming an array device and an organic electroluminescent diode device on a different substrate. CONSTITUTION: First and second substrates(110,150) have a sub-pixel region and are arranged opposite to each other. An array device layer includes a plurality of thin film transistors(T) provided within the first substrate(110). A connecting electrode(132) is connected to the thin film transistor(T) at an upper portion of the array device layer. A first electrode(152) is formed on the front of an inner of the second substrate(150). An organic electroluminescent layer(158) is formed on a lower portion of the first electrode(152). A second electrode(160) is formed on a lower portion of the organic electroluminescent layer(158) by a sub-pixel unit. An electrical connecting pattern(134) electrically connects the second electrode(160) to the connecting electrode(132) and is comprised of an anisotropic conductive film. A seal pattern(170) encapsulates edges of the first and second substrates(110,150).

Description

Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same

The present invention relates to an organic electroluminescent device, and more particularly to a dual panel type organic electroluminescent device.

One of the new flat panel displays (FPDs), the organic light emitting display device is self-luminous and thus has a better viewing angle and contrast than the liquid crystal display device. Is also advantageous. In addition, since it is possible to drive DC low voltage, fast response speed, and all solid, it is strong against external shock, wide use temperature range, and especially inexpensive in terms of manufacturing cost.

In particular, unlike the liquid crystal display device or the plasma display panel (PDP), the deposition and encapsulation equipments can be referred to in the manufacturing process of the organic light emitting device, and the process is very simple.

In the related art, a passive matrix having no separate switching device has been mainly used as a driving method of the organic light emitting device.

However, in the passive matrix method, since scan lines and signal lines cross each other to form an element, the scan lines are sequentially driven over time in order to drive each pixel, thereby requiring an average luminance. In order to indicate, the instantaneous luminance is equal to the average luminance multiplied by the number of lines.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off a pixel, is positioned for each subpixel, and the first electrode connected to the thin film transistor is The second electrode, which is turned on / off in subpixel units and faces the first electrode, becomes a common electrode.

In the active matrix method, a voltage applied to a pixel is charged in a storage capacitor (C _ST ), so that power is applied until the next frame signal is applied, thereby relating to the number of scan lines. Run continuously for one screen without

Therefore, according to the active matrix method, since the same luminance is applied even when a low current is applied, it has the advantage of low power consumption, high definition, and large size.

Hereinafter, the basic structure and operation characteristics of the active matrix organic electroluminescent device will be described in detail with reference to the accompanying drawings.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

As shown, a scanning line is formed in a first direction, and a signal line and a power supply line are formed in a second direction crossing the first direction and spaced apart from each other by a predetermined distance. Define the subpixel area.

A switching TFT, which is an addressing element, is formed at the intersection of the scan line and the signal line, and is connected to the switching thin film transistor and the power supply line to form a storage capacitor C _ST . A driving thin film transistor, which is connected to the storage capacitor C _ST and a power supply line, is formed, and the driving thin film transistor is connected to the driving thin film transistor to form an organic electroluminescent diode.

When the organic light emitting diode is supplied with a current in the forward direction, the organic light emitting diode has a positive (N) junction between the anode electrode, which is a hole providing layer, and the cathode electrode, which is an electron providing layer. Electrons and holes recombine with each other as they move through the part, and thus have a smaller energy than when the electrons and holes are separated, thereby utilizing the principle of emitting light due to the energy difference generated.

The organic light emitting device is classified into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting diode.

Hereinafter, FIG. 2 is a schematic cross-sectional view of a conventional bottom emission type organic light emitting display device, and is illustrated based on one pixel area including red, green, and blue subpixels.

As illustrated, the first and second substrates 10 and 30 are disposed to face each other, and the edge portions of the first and second substrates 10 and 30 are sealed by a seal pattern 40. The thin film transistor T is formed on the transparent substrate 1 of the first substrate 10 for each subpixel, and is connected to the thin film transistor T to form the first electrode 12. Red, green, and blue colors are disposed on the transistor T and the first electrode 12 to be connected to the thin film transistor T so as to correspond to the first electrode 12. An organic light emitting layer 14 including a light emitting material is formed, and a second electrode 16 is formed on the organic light emitting layer 14.

The first and second electrodes 12 and 16 serve to apply an electric field to the organic light emitting layer 14.

The second electrode 16 and the second substrate 30 are spaced apart from each other by the seal pattern 40 described above, and although not shown in the drawing, the inner surface of the second substrate 30 may be moved outwardly. A moisture absorbent for blocking moisture of the semi-permeable tape for adhesion between the moisture absorbent and the second substrate 30 is included.

For example, when the first electrode 12 is an anode and the second electrode 16 is a cathode in a bottom emission structure, the first electrode 12 is selected from a transparent conductive material, and the second electrode 16 is formed. ) Is selected from a metal material having a low work function, and under these conditions, the organic light emitting layer 14 is formed from a layer in contact with the first electrode 12, a hole injection layer 14a, a hole transport layer 14b; A transporting layer), an emission layer 14c, and an electron transporting layer 14d are formed in this order.

In this case, the light emitting layer 14c has a structure in which light emitting materials for implementing red, green, and blue colors are sequentially disposed for each subpixel.

FIG. 3 is an enlarged cross-sectional view of one subpixel area of the FIG. 2 bottom emission type organic electroluminescent device.

As illustrated, the semiconductor layer 62, the gate electrode 68, the source and drain electrodes 80 and 82 are sequentially formed on the transparent substrate 1 to form a thin film transistor region, and the source and drain electrodes 80, The power electrode 72 and the organic light emitting diode E formed in the power supply line (not shown) are respectively connected to 82.

In addition, a capacitor electrode 64 made of the same material as the semiconductor layer 62 is disposed under an insulator interposed between the power electrode 72 and the corresponding region forms a storage capacitor region.

Elements formed in the thin film transistor region and the storage capacitor region other than the organic light emitting diode E form the array element A.

The organic light emitting diode E includes a first electrode 12 and a second electrode 16 facing each other with the organic light emitting layer 14 interposed therebetween. The organic light emitting diode E is positioned in a light emitting area for emitting self-emitting light to the outside.

As described above, the conventional organic light emitting display device has a structure in which the array device A and the organic light emitting diode E are stacked on the same substrate.

4 is a flowchart illustrating a manufacturing process of a conventional organic light emitting display device.

st1 is a step of forming an array element on a first substrate, wherein the first substrate refers to a transparent substrate, a scan line on the first substrate, a signal line and a power supply line crossing the scan line and spaced apart from each other; And forming an array element including a switching thin film transistor formed at a point where the scan line and the signal line intersect, and a driving thin film transistor formed at the point where the scan line and the power supply line intersect.

st2 is a step of forming a first electrode which is a first component of the organic light emitting diode, and the first electrode is connected to the driving thin film transistor and patterned for each subpixel.

st3 is a step of forming an organic light emitting layer which is a second component of the organic light emitting diode on the first electrode, and when the first electrode is composed of an anode, the organic light emitting layer is a hole injection layer, a hole transport layer The light emitting layer, the electron transport layer may be laminated in order.

In st4, the second electrode, which is a third component of the organic light emitting diode, is formed on the organic light emitting layer, and the second electrode is formed on the entire surface of the substrate as a common electrode.

At st5, the first substrate is encapsulated using a second substrate, which is another substrate. In this step, the first substrate is protected from an external impact and the organic light emitting layer is exposed to the inflow of external air. Encapsulating the outer surface of the first substrate to the second substrate to prevent damage, the inner surface of the second substrate may include a moisture absorbent.

As described above, the conventional bottom emission type organic light emitting diode device is manufactured by bonding an array device and a substrate on which an organic light emitting diode is formed and a separate substrate for encapsulation. In this case, since the product of the yield of the array device and the yield of the organic light emitting diode determines the yield of the organic light emitting diode, the overall organic process of the organic light emitting diode structure yields the overall process yield by the organic electroluminescent diode process. There was a problem that is greatly limited. For example, even if the array element is well formed, when the organic electroluminescent layer using the thin film of about 1000 mW is defective by foreign matter or other factors, the organic electroluminescent element is determined to be a poor grade. .

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there was a problem that the production yield is lowered.

In addition, the bottom emission method has a high degree of freedom and stability due to the encapsulation process, and has a problem in that it is difficult to be applied to a high resolution product due to the limitation of the aperture ratio. The top emission method is easy to design a thin film transistor and improves the aperture ratio It is advantageous in terms of product life, but in the conventional top emission type structure, since the material selection range is narrow as the cathode is normally positioned on the organic light emitting layer, the transmittance is limited and the light efficiency is reduced, and the light transmittance is minimized. In order to configure a thin film type protective film, there was a problem in that it does not sufficiently block outside air.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a high-resolution / high-throughput structure active matrix type organic electroluminescent device having improved production yield.

To this end, the present invention is to provide a dual panel type organic electroluminescent device in which an array element and an organic light emitting diode element are formed on different substrates, and the two elements are connected through separate electrical connection patterns. In particular, the electrical connection pattern is intended to be made of an anisotropic conductive film or to constitute a conductive ball spacer.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

Figure 2 is a schematic cross-sectional view of a conventional bottom emission organic electroluminescent device.

3 is an enlarged cross-sectional view of one subpixel area of the organic light emitting diode of FIG. 2;

Figure 4 is a process flow diagram for the manufacturing process of the conventional organic electroluminescent device.

5 is a cross-sectional view of a dual panel type organic light emitting display device according to the present invention;

6 is a general laminated cross-sectional view of the anisotropic conductive film used in the present invention.

7A and 7B are cross-sectional views illustrating an example of an internal structure of the conductive ball according to FIG. 6.

8 is a cross-sectional view of a dual panel organic electroluminescent device according to a second embodiment of the present invention.

<Explanation of symbols for main parts of the drawings>

110: first substrate 112: buffer layer

114: semiconductor layer 116: gate insulating film

118: gate electrode 120: first contact hole

122: second contact hole 124: interlayer insulating film

126 source electrode 128 drain electrode

130: third contact hole 132: connecting electrode

134a: conductive ball 134b: thermosetting resin

134: electrical connection pattern 150: second substrate

152: first electrode 154: insulating film

156: partition 158: organic light emitting layer

160: second electrode 170: seal pattern

I: active area II: source area

III: drain region E: organic light emitting diode device

T: thin film transistor

In order to achieve the above object, in the first aspect of the present invention, there is defined a subpixel area, which is a minimum unit for implementing a screen, and includes: first and second substrates disposed to face each other at a predetermined interval; An array element layer including a plurality of thin film transistors formed in subpixel units on an inner surface of the first substrate; A connection electrode connected to the thin film transistor on the array element layer; A first electrode formed on an inner front surface of the second substrate; An organic light emitting layer formed under the first electrode; A second electrode formed in a subpixel unit below the organic light emitting layer; An electrical connection pattern electrically connecting the second electrode and the connection electrode, the electrical connection pattern comprising an anisotropic conductive film having a plurality of conductive balls; The present invention provides a dual panel type organic light emitting display device including a seal pattern encapsulating edge portions of the first and second substrates.

The anisotropic conductive film includes the plurality of conductive balls and a thermosetting resin layer in the form of a film containing the conductive balls, wherein the conductive balls are elastic bodies deformed into ellipses by heat or pressure, and the electrical connection pattern is The sub-pixel units are configured independently of each other.

In addition, the electrical connection pattern is characterized in that it is formed integrally within the seal pattern area.

According to a second aspect of the present invention, there is provided a sub-pixel region, which is a minimum unit that implements a screen, and includes first and second substrates disposed to face each other at a predetermined interval; An array element layer including a plurality of thin film transistors formed in subpixel units on an inner surface of the first substrate; A connection electrode connected to the thin film transistor on the array element layer; A first electrode formed on an inner front surface of the second substrate; An organic light emitting layer formed under the first electrode; A second electrode formed in a subpixel unit below the organic light emitting layer; A plurality of conductive ball spacers positioned in a section between the second electrode and the connection electrode to electrically connect the second electrode and the connection electrode; The present invention provides a dual panel type organic light emitting display device including a seal pattern encapsulating edge portions of the first and second substrates.

The material constituting the conductive ball spacer is selected from any one of a metal material, an alloy material, a conductive ceramic material, or by coating any one of a metal material or an alloy material on the surface of the glass ball (glass ball) Characterized in that made.

The thin film transistor according to the first and second aspects of the present invention includes a switching thin film transistor and a driving thin film transistor, and the thin film transistor connected to the organic light emitting diode device corresponds to a driving thin film transistor, and the organic field The light emitting device implements a screen by an upper light emitting method of emitting light emitted from the organic light emitting layer toward the first electrode, and the organic light emitting layer includes a first carrier transport layer and the second contacting the first electrode. And a red, green, and blue light emitting layer repeatedly arranged in subpixel units in the interval between the first carrier transfer layer and the first carrier transfer layer in contact with the electrode, and between the second substrate and the first electrode. The color conversion layer is located, the organic electroluminescent layer is characterized in that it comprises a light emitting layer of a short wavelength region.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

Example 1

In this embodiment, an array element and an organic light emitting diode element are formed on different substrates, and the array element and the organic light emitting diode element formed on two different substrates are connected to each other by a separate electrical connection pattern. The organic electroluminescent device is characterized in that the electrical connection pattern is made of an anisotropic conductive film.

FIG. 5 is a cross-sectional view of a dual panel type organic light emitting display device according to an embodiment of the present invention. For convenience of description, an array device is illustrated based on a driving thin film transistor, and other storage capacitance and switching thin film transistors are shown in FIG. 1. Applicable

As shown in the drawing, the first and second substrates 110 and 150 are arranged to be spaced apart from each other by a sub-pixel unit, which is the smallest unit for realizing the screen. An array element layer 140 including a plurality of thin film transistors T formed in subpixel units is formed on an inner surface thereof, and a connection electrode 132 is connected to the driving thin film transistor T on the array element layer 140. ) Is formed, and an electrical connection pattern 134 made of an anisotropic conductive film is formed on an upper surface of the connection electrode 132.

In addition, a first electrode 152 is formed on an inner surface of the second substrate 150, and an insulating film 154 and a partition wall 156 are sequentially formed at a boundary of each subpixel region on a lower surface of the first electrode 152. The organic light emitting layer 158 and the second electrode 160 are sequentially formed in the subpixel unit in the inner region of the partition 156 without a separate patterning process by the partition 156.

The first and second electrodes 152 and 160 and the organic light emitting layer 158 form an organic light emitting diode device (E).

Although not shown in the drawing, the partition wall 156 has a frame structure that surrounds a subpixel area boundary planarly, and also includes a separate color conversion layer in order to realize full color. The electroluminescent layer may include a light emitting layer having a short wavelength region or may have a structure including red, green, and blue light emitting layers independently for each subpixel.

In addition, edge portions of the first and second substrates 110 and 150 are encapsulated in the seal pattern 170, wherein an inner region of the first and second substrates 110 and 150 is not exposed to moisture and the atmosphere. B. They are packed together in a liquid filled state.

The stack structure of the array device layer 140 will be described in more detail. The buffer layer 112 is formed on the entire surface of the first substrate 110, and the active region I is formed on the buffer layer 112 in subpixel units. And a semiconductor layer 114 in which the source region II and the drain region III, which are positioned at both sides of the active region I, are defined, and a gate insulating film is formed on the active region I of the semiconductor layer 114. 116 and the gate electrode 118 are formed in this order, and the part which exposes the source region II and the drain region III of the semiconductor layer 114 mentioned above on the whole surface of the board | substrate which covers the gate electrode 118 is made. The first passivation layer 124 having the first and second contact holes 120 and 122 is formed, and the semiconductor layer 114 is formed on the first passivation layer 124 through the first and second contact holes 120 and 122. A source electrode 126 and a drain electrode 128 connected to the source region II and the drain region III, respectively, are formed. A second protective layer 131 having a third contact hole 130 exposing a part of the drain electrode 128 is formed on the entire surface of the substrate covering the 126 and the drain electrode 128, and the second protective layer ( 131, the connection electrode 132 is formed by being connected to the drain electrode 128 through the third contact hole 130, and the electrical connection pattern 134 made of an anisotropic conductive film is formed on the connection electrode 132. The top surface of the electrical connection pattern 134 is connected to the lower surface of the second electrode 160 described above, and is formed from the thin film transistor T via the connection electrode 132 and the electrical connection pattern 134. The current supplied is delivered to the organic light emitting diode device E.

The semiconductor layer 114, the gate electrode 118, the source electrode 126, and the drain electrode 128 form a thin film transistor T.

The organic light emitting diode includes at least one switching thin film transistor and a driving thin film transistor in subpixel units, and the thin film transistor T in the drawing corresponds to a driving thin film transistor for supplying current to the organic light emitting diode device.

Although not shown in detail in the drawings, a pixel driving storage capacitance is formed by being connected to the thin film transistor T, and a gate electrode 116 of the thin film transistor T is connected to a drain electrode of a switching thin film transistor (not shown). .

On the other hand, the electrical connection pattern 134 described above in more detail, the anisotropic conductive film constituting the electrical connection pattern 134 is a film form containing a plurality of conductive balls 134a, conductive ball 134a Made of a thermosetting resin 134b, and in the present embodiment, the thermosetting resin 134b is cured by heat and pressure, and the conductive ball 134a, which is a kind of elastic body, is deformed into an elliptical shape having a long axis in a direction in which pressure is applied. The contact area between the connection electrode 132 and the second electrode 160 may be increased.

In particular, since the thermosetting resin 134b is an insulating material, the conductive balls 134a have conductivity, and the conductive balls 134a have a ball shape independent of each other, so that the pressure is applied in the up and down directions. However, since the conductive film is not conductive in the left and right directions, the electrical connection pattern 134 may be disposed in subpixel units or in an integrated pattern in the display area as shown in the drawing.

6 is a general laminated cross-sectional view of the anisotropic conductive film used in the present invention.

As shown, a first layer 210 made of a thermosetting resin 210b containing a plurality of conductive balls 210a and a second layer 212 which is a protective film located on the first layer 210. In the configured anisotropic conductive film 214, the conductive balls (210a) in the thermosetting resin (210b) is characterized in that a plurality of structures in the form of balls independent of each other.

Substantially, when the anisotropic conductive film 214 is used as the electrical connection pattern 134 of FIG. 5, the second layer 212 of the anisotropic conductive film 214 is removed and the first layer 210 is used. The first layer 210 may be disposed in subpixel units or may be integrally disposed in the display area of the substrate.

Figure 7a, 7b is a cross-sectional view showing an example of the internal structure of the conductive ball according to Figure 6, Figure 7a is a conductive ball form without heat or pressure applied, Figure 7b is elliptical by heat or pressure It shows a conductive ball of the modified form.

7A and 7B, a central portion 220 made of a plastic-based material, a central portion 220, and a first peripheral portion 222 made of nickel (Ni) and an outer portion of the first peripheral portion 222 are illustrated. Located in the outermost part of the portion, and showed a laminated structure of the conductive ball 230 made of a second peripheral portion 224 made of gold (Au) plating, because the conductive ball 230 having such a laminated structure has an elastic force The conductive ball 230 of FIG. 7A may be transformed into an ellipsoidal conductive ball 240 as shown in FIG. 7B by a bonding process in which heat or pressure is applied.

Accordingly, the diameter “L1” of the conductive ball 230 of FIG. 7A is lengthened to the long axis length “L2” of the ellipsoid conductive ball 240 of FIG. 7B through the bonding process, thereby increasing the contact area in the bonding process. Therefore, the electrical contact force can be increased.

Example 2

The present embodiment relates to an embodiment using a conductive ball spacer as a connection electrode for connecting an array element and an organic light emitting diode element in a dual panel type organic electroluminescent element.

FIG. 8 is a cross-sectional view of a dual panel type organic light emitting display device according to a second embodiment of the present invention, and a description of a portion overlapping with the dual panel type organic light emitting display device of FIG. 5 will be omitted.

As illustrated, the first and second substrates 310 and 350 in which the subpixel regions are defined are arranged to be spaced apart from each other, and the plurality of thin film transistors formed in subpixel units on the inner surface of the first substrate 310. An array element layer 340 including T) is formed, and a connection electrode 324 is formed on the array element layer 340 by being connected to the thin film transistor T.

In addition, a first electrode 352 is formed on the entire inner surface of the second substrate 350, and an insulating film 354 and a partition wall 356 are sequentially formed at the boundary of each subpixel under the first electrode 352. In addition, the organic light emitting layer 358 and the second electrode 360 are sequentially formed in the lower portion of the partition wall 356 by the partition wall 356 in units of subpixels.

In addition, a plurality of conductive ball spacers 330 are distributed between the second electrode 360 and the array element layer 340, and thus the second electrode 360 and the connection electrode are formed by the conductive ball spacers 330. 324 is electrically connected.

The thin film transistor T includes a semiconductor layer 312, a gate electrode 314, a source electrode 316, and a drain electrode 318. The thin film transistor T is positioned on an entire surface of the substrate covering the thin film transistor T. A protective layer 322 is formed to have a drain contact hole 320 partially exposing the electrode 318, and the connection is connected to the drain electrode 318 through the drain contact hole 320 on the protective layer 322. An electrode 324 is formed, and a plurality of conductive ball spacers 330 are scattered on the connection electrode 324, and an upper surface of the conductive ball spacer 330 is in contact with the second electrode 360. It is done.

The conductive ball spacer 330 may be formed of a metal material, an alloy material, a conductive ceramic material, or a conductive material. Examples of the conductive ball spacer 330 may include gold (Au), silver (Ag), indium (In), and aluminum ( Al) etc. are mentioned. Alternatively, a metal material or an alloy material may be coated on the surface of a non-conductive material such as a glass ball to be used as a conductive material.

In addition, in the present embodiment, in addition to the barrier rib structure described above to implement full color, a separate color conversion layer is provided, and the organic electroluminescent layer includes a light emitting layer having a short wavelength region, or each subpixel is independent by using a shadow mask. It can also be configured to emit red, green, blue color.

Since the conductive ball spacer according to the present embodiment can be used as a conductive connector only in the upper and lower portions as in the conductive ball according to the first embodiment, short defects between neighboring subpixels are blocked even when scattered on the entire surface of the substrate.

The organic light emitting device according to the present invention includes at least one switching thin film transistor and a driving thin film transistor in subpixel units, and the thin film transistor T in the drawing corresponds to a driving thin film transistor for supplying current to the organic light emitting diode device. .

Although not shown in detail in the drawings, a pixel driving storage capacitance is formed by connecting to the thin film transistor T, and a gate electrode of the thin film transistor T is connected to a drain electrode of a switching thin film transistor (not shown).

However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

For example, in the drawings according to the first and second embodiments, a structure in which two pixels consisting of red, green, and blue subpixels are arranged as an example for convenience of description is described, but the actual structure has a structure in which a plurality of pixels are configured.

As described above, according to the dual panel type organic light emitting display device having the partition structure according to the present invention, the following effects are obtained.

First, since the array device and the organic light emitting diode device are formed on different substrates, production yield and production management efficiency can be improved, and product life can be increased.

Second, because of the top emission method, it is easy to design a thin film transistor and high aperture ratio / high resolution can be realized.

Third, since an anisotropic conductive film or conductive ball spacer including a plurality of conductive balls independent of each other is used as an electrical connection pattern, a separate patterning process can be omitted, and a short between adjacent subpixels can be effectively prevented. You can block.

Claims (12)

First and second substrates each having a subpixel area defined as a minimum unit for realizing a screen and disposed to face each other at a predetermined distance from each other; An array element layer including a plurality of thin film transistors formed in subpixel units on an inner surface of the first substrate; A connection electrode connected to the thin film transistor on the array element layer; A first electrode formed on an inner front surface of the second substrate; An organic light emitting layer formed under the first electrode; A second electrode formed in a subpixel unit below the organic light emitting layer; An electrical connection pattern electrically connecting the second electrode and the connection electrode and comprising an anisotropic conductive film having a plurality of conductive balls; Seal patterns encapsulating edge portions of the first and second substrates Dual panel type organic light emitting device comprising a. The method of claim 1, The anisotropic conductive film, the dual panel type organic electroluminescent device comprising the plurality of conductive balls and the thermosetting resin layer of the film form containing the conductive balls. The method of claim 1, The conductive ball is a dual panel type organic electroluminescent device which is an elastic body deformed into an ellipsoid by heat or pressure. The method of claim 1, The electrical connection pattern is a dual panel type organic light emitting device that is configured independently of each other in subpixel units. The method of claim 1, The electrical connection pattern, the dual panel type organic electroluminescent device is integrally formed in the seal pattern region. First and second substrates each having a subpixel area defined as a minimum unit for realizing a screen and disposed to face each other at a predetermined distance from each other; An array element layer including a plurality of thin film transistors formed in subpixel units on an inner surface of the first substrate; A connection electrode connected to the thin film transistor on the array element layer; A first electrode formed on an inner front surface of the second substrate; An organic light emitting layer formed under the first electrode; A second electrode formed in a subpixel unit below the organic light emitting layer; A plurality of conductive ball spacers positioned in a section between the second electrode and the connection electrode to electrically connect the second electrode and the connection electrode; Seal patterns encapsulating edge portions of the first and second substrates Dual panel type organic light emitting device comprising a. The method of claim 6, The material constituting the conductive ball spacer is selected from any one of a metal material, an alloy material, and a conductive ceramic material. The method of claim 6, The conductive ball spacer is a dual panel type organic electroluminescent device formed by coating any one of a metal material or an alloy material on the surface of a glass ball. The method according to any one of claims 1 to 6, The thin film transistor includes a switching thin film transistor and a driving thin film transistor, and the thin film transistor connected to the organic light emitting diode device is a dual panel type organic light emitting device corresponding to the driving thin film transistor. The method according to any one of claims 1 to 6, The organic light emitting display device is a dual panel type organic light emitting display device that implements a screen in a top light emitting method for emitting light emitted from the organic light emitting layer toward the first electrode. The method according to any one of claims 1 to 6, The organic light emitting layer may be repeatedly arranged in subpixel units in a section between the first carrier transfer layer in contact with the first electrode and the second carrier transfer layer in contact with the second electrode, and the first and second carrier transfer layers. Dual panel type organic electroluminescent device comprising a red, green, blue light emitting layer. The method according to any one of claims 1 to 6, A color converting layer is disposed between the second substrate and the first electrode, and the organic light emitting layer includes a light emitting layer having a short wavelength region.