KR20020088662A - Method and apparatus for dry surface-cleaning of materials - Google Patents

Method and apparatus for dry surface-cleaning of materials Download PDF

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Publication number
KR20020088662A
KR20020088662A KR1020010027463A KR20010027463A KR20020088662A KR 20020088662 A KR20020088662 A KR 20020088662A KR 1020010027463 A KR1020010027463 A KR 1020010027463A KR 20010027463 A KR20010027463 A KR 20010027463A KR 20020088662 A KR20020088662 A KR 20020088662A
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South Korea
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laser beam
workpiece
shock wave
cleaning
short wavelength
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KR1020010027463A
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Korean (ko)
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KR100463212B1 (en
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이종명
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주식회사 아이엠티
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Priority to KR10-2001-0027463A priority Critical patent/KR100463212B1/en
Priority to JP2002067044A priority patent/JP3776820B2/en
Priority to US10/094,610 priority patent/US6635845B2/en
Priority to TW91104843A priority patent/TW543097B/en
Publication of KR20020088662A publication Critical patent/KR20020088662A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser

Abstract

PURPOSE: A method and an apparatus for dry cleaning are provided to effectively remove surface contaminants by using a plasma shock wave and a short wavelength laser beam. CONSTITUTION: A laser beam generator(1) is generated a plasma shock wave(5) and irradiated the plasma shock wave(5) to a surface of a workpiece(6). A short wavelength laser beam generator(21) is generated a short wavelength laser beam(22) and irradiated the short wavelength laser beam(22) into the surface of the workpiece(6). By using the plasma shock wave(5) and the short wavelength laser beam(22), surface contaminants(7) formed on the workpiece(6) are effectively removed.

Description

건식 표면 클리닝 방법 및 장치{METHOD AND APPARATUS FOR DRY SURFACE-CLEANING OF MATERIALS}Dry surface cleaning method and apparatus {METHOD AND APPARATUS FOR DRY SURFACE-CLEANING OF MATERIALS}

본 발명은 건식 표면 클리닝 방법 및 장치에 관한 것으로, 레이저 유기 충격파와 단파장 레이저빔을 이용하여 작업물 표면의 다양한 오염물질을 효과적으로 제거하기 위한 클리닝 방법 및 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry surface cleaning method and apparatus, and more particularly to a cleaning method and apparatus for effectively removing various contaminants on a workpiece surface using a laser organic shock wave and a short wavelength laser beam.

기존의 반도체 표면 클리닝 방법으로 화학적 용매(chemical solvents)를 이용한 습식 방법(wet cleaning)이 사용된다. 보통 사용되는 용매들로는 황산(H2SO4), 염산(HCl), 암모니아(NH4OH), 과산화 수소(H2O2), 불화수소(HF) 등이 물과 혼합되어 사용되며, 이런 용매들과 함께 초음파(ultrasonic 또는 megasonic) 발생 장치를 함께 한 클리닝 방법이 이용되고 있다. 이러한 습식 클리닝 방법은 상당량의 화학약품 사용에 따른 환경 오염문제, 느린 작업속도, 거대한 세정장비의 필요, 복잡하고 열악한 작업환경 등의 문제가 제기되어, 이의 대체를 위한 건식 클리닝(dry cleaning) 방법에 대한 연구가 활발히 진행되고 있다. 현재까지 제시된 건식 클리닝 방법에는 레이저(laser) 또는 램프를 이용해 자외선(ultraviolet)빔을 표면에 직접 조사시켜 유기 오염물질을 제거하는 자외선 클리닝(ultraviolet radiation cleaning: laser cleaning 또는 excimer lamp cleaning), 진공에서 플라즈마(plasma)를 발생시켜 라디칼(radical)을 이용해 오염물질과 반응시켜 제거하는 플라즈마 클리닝(plasma cleaning), 이산화탄소(CO2) 스노우(snow)를 만들어강하게 분사시켜 표면을 클리닝하는 이산화탄소 스노우 클리닝(CO2snow cleaning) 등이 있다.As a conventional semiconductor surface cleaning method, wet cleaning using chemical solvents is used. Commonly used solvents include sulfuric acid (H 2 SO 4 ), hydrochloric acid (HCl), ammonia (NH 4 OH), hydrogen peroxide (H 2 O 2 ), and hydrogen fluoride (HF). In addition, a cleaning method using an ultrasonic (ultrasonic or megasonic) generating device is used. This wet cleaning method poses problems such as environmental pollution, slow working speed, huge cleaning equipment, complicated and poor working environment due to the use of a large amount of chemicals, and is a dry cleaning method to replace the wet cleaning method. Research is actively being conducted. The dry cleaning methods proposed to date include ultra-violet radiation cleaning (laser cleaning or excimer lamp cleaning), which removes organic pollutants by directly irradiating an ultraviolet beam to the surface using a laser or lamp, plasma in vacuum. plasma cleaning (plasma cleaning), carbon dioxide (CO 2) by spraying strongly make snow (snow) cleaning the carbon dioxide snow to clean the surface to remove reacted with a pollutant by using a radical (radical) by generating (plasma) (CO 2 snow cleaning).

그러나 이러한 종래의 건식 클리닝 방법 중, 레이저 클리닝 방법은 작은 레이저 스폿 크기로 인한 느린 작업속도, 표면 위의 미세 무기 오염입자들의 제거가 어렵고, 플라즈마 클리닝 방법은 부가적인 진공장비가 필요하며 진공상에서 이루어지기 때문에 큰 대상물의 클리닝이 어렵다는 문제점이 있으며, 이산화탄소 스노우 클리닝 방법은 스노우 입자들의 충돌에 따른 모재의 기계적인 손상 가능성이 높고 공정제어가 어렵다는 단점이 있다. 이와 같은 건식 클리닝의 문제점들을 해결하기 위한 새로운 방법으로 "건식 표면 클리닝 방법"이 본 발명자에 의해 출원되었다(특허출원번호: 2000-73391 ; 2000년 12월 5일).However, among these conventional dry cleaning methods, the laser cleaning method has a slow working speed due to the small laser spot size, it is difficult to remove fine inorganic contaminants on the surface, and the plasma cleaning method requires additional vacuum equipment and is performed in a vacuum state. Therefore, there is a problem that it is difficult to clean a large object, the carbon dioxide snow cleaning method has a high possibility of mechanical damage of the base material due to the collision of snow particles and has a disadvantage of difficult process control. As a new method for solving such problems of dry cleaning, a "dry surface cleaning method" has been filed by the present inventor (Patent Application No. 2000-73391; December 5, 2000).

상기 출원된 내용에 따르면, 레이저로부터 조사된 레이저빔을 포커스 렌즈를 통해 대기 중에 또는 희생층 표면에 또는 모재 뒷면에 조사시켜 강력한 플라즈마를 발생시키고, 이때 발생하여 사방으로 전파되는 플라즈마 충격파를 이용하여 모재 표면의 오염물질을 제거하는 것으로, 클리닝 속도 및 효율이 향상되고, 시스템의 가격을 낮출 수 있으며, 모재의 손상을 방지할 수 있고, 부가적인 진공장비가 필요 없으며, 모재의 크기에 제약을 받지 않게 되는 등의 효과를 얻을 수 있다.According to the above application, the laser beam irradiated from the laser is irradiated to the surface of the sacrificial layer or the back surface of the base material through the focus lens in the air to generate a strong plasma, and the base material using the plasma shock wave generated at this time and propagated in all directions Eliminating surface contaminants improves cleaning speed and efficiency, lowers the cost of the system, prevents substrate damage, eliminates the need for additional vacuum equipment, and is not limited by substrate size. Effect such as

그러나 상기 충격파를 이용한 건식 표면 클리닝 방법은 표면 위 건식 입자들(dry particles)의 제거에는 우수한 성능을 발휘할 수 있으나, 작업물 표면의 유기 오염층(organic contaminanted layer) 제거에는 비효과적인 단점이 있다.However, the dry surface cleaning method using the shock wave may exhibit excellent performance in removing dry particles on the surface, but has an ineffective disadvantage in removing organic contaminanted layers from the surface of the workpiece.

본 발명은 이와 같은 종래의 단점을 해소하기 위한 것으로, 레이저 유기 충격파와 단파장 레이저빔을 병행 사용하여 표면 위 건식 입자들과 유기오염물질 모두를 효과적으로 제거할 수 있는 건식 표면 클리닝 방법 및 장치를 제공하는데 그 목적이 있다.The present invention is to solve the above disadvantages, to provide a dry surface cleaning method and apparatus that can effectively remove both dry particles and organic pollutants on the surface by using a combination of laser organic shock wave and short wavelength laser beam. The purpose is.

이와 같은 목적을 실시하기 위한 본 발명은 레이저로부터 조사된 짧은 펄스파(100 nanosecond 이하)의 고에너지 레이저빔(0.1 ∼ 10 J/pulse)을 초점 렌즈를 통해 대기 중에 집속시켜 레이저 초점에서 사방으로 전파되는 플라즈마 충격파를 발생시키고, 이때 발생되는 플라즈마 충격파를 작업물 표면에 충돌시켜 작업물 표면의 건식 오염물질을 제거하는 표면 클리닝 장치와 유기오염물질의 제거에 효과적인 단파장의 레이저빔을 발생시키는 장치를 함께 사용하는 것을 특징으로 한다.In order to accomplish the above object, the present invention focuses a short pulse wave (100 nanosecond or less) high energy laser beam (0.1 to 10 J / pulse) irradiated from a laser in the air through a focusing lens to propagate from the laser focus to all directions. And a surface cleaning device for removing dry contaminants on the surface of the workpiece by generating a plasma shock wave, and generating a short-wave laser beam effective for removing organic pollutants. It is characterized by using.

도 1은 본 발명에 따른 건식 표면 클리닝 방법의 제1실시예를 도시한 개략도.1 is a schematic view showing a first embodiment of a dry surface cleaning method according to the present invention;

도 2는 본 발명에 따른 건식 표면 클리닝 방법의 제2실시예를 도시한 개략도.2 is a schematic view showing a second embodiment of a dry surface cleaning method according to the present invention;

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

1: 충격파 레이저빔 발생장치 2: 레이저빔(laser beam)1: Shock wave laser beam generator 2: Laser beam

3: 초점렌즈(focussing lens) 4: 레이저 초점(laser focus)3: focusing lens 4: laser focus

5: 플라즈마 충격파(plasma shock wave) 6: 작업물(workpiece)5: plasma shock wave 6: workpiece

7: 표면 오염물(surface contaminants) 9: 작업대(working table)7: surface contaminants 9: working table

11: 진공펌프(vacuum pump) 12: 가스튜브11: vacuum pump 12: gas tube

21: 단파장 레이저빔 발생장치21: short wavelength laser beam generator

22: 단파장 레이저빔(short wavelength laser beam)22: short wavelength laser beam

26: 스위칭미러(switching mirror)26: switching mirror

27: 주파수하모닉 발생장치(frrequency harmonic generator)27: frequency harmonic generator

28: 반사미러(reflecting mirror)28: reflecting mirror

이와 같은 본 발명의 특징적인 구성 및 이에 따른 작용효과는 첨부된 도면을 참조한 실시예의 상세한 설명을 통해 더욱 명확해질 것이다.Such a characteristic configuration and the effects thereof according to the present invention will become more apparent from the detailed description of the embodiments with reference to the accompanying drawings.

기본적으로 모든 클리닝 공정에 있어서 레이저를 이용한 충격파의 발생은 본 발명자에 의해 출원된, 특허출원번호: 2000-73391호, "건식 표면 클리닝 방법"에 잘 설명되어 있으며, 이를 기본 전제로 한다.Basically, the generation of shock waves using a laser in all cleaning processes is well described in the patent application No. 2000-73391, "Dry Surface Cleaning Method" filed by the present inventors, which is based on the basic premise.

도 1은 본 발명에 따른 건식 표면 클리닝 장치의 제 1 실시예를 도시한 개략도이다.1 is a schematic view showing a first embodiment of a dry surface cleaning apparatus according to the present invention.

도 1에 도시된 바와 같이, 본 발명에 따른 건식 표면 클리닝 장치는 레이저유기 충격파를 발생시키는 충격파 레이저빔 발생장치(1)와, 단파장의 레이저빔을 발생시켜 표면에 직접 조사하는 단파장 레이저빔 발생장치(21)로 이루어진다.As shown in FIG. 1, the dry surface cleaning apparatus according to the present invention includes a shock wave laser beam generator 1 for generating a laser organic shock wave, and a short wavelength laser beam generator for directly irradiating a surface with a short wavelength laser beam. It consists of 21.

통상적으로 작업물(6)은 진공펌프(11)를 이용해 작업대(9) 위에 밀착 고정된다.Typically, the work piece 6 is tightly fixed on the work table 9 using the vacuum pump 11.

이와 같이, 제 1 실시예에 따른 건식 표면 클리닝 장치는 충격파 레이저빔 발생장치(1)로부터 조사된 레이저빔(2)을 초점 렌즈(3)를 통해 작업물 위 대기 중에 집속시켜 레이저 초점(4)에서 플라즈마 충격파(plasma shock wave)(5)를 발생하며 사방으로 전파된다. 전파되는 충격파는 작업물 표면과 부딪치게 되며, 이때 충격파의 힘이 작업물에 부착된 오염입자와 모재와의 접촉강도보다 크면 오염입자들은 작업물의 표면으로부터 떨어져 제거되게 된다(참조: 특허출원번호: 2000-73391 ; 2000년 12월 5일).In this way, the dry surface cleaning apparatus according to the first embodiment focuses the laser beam 2 irradiated from the shock wave laser beam generator 1 on the workpiece through the focus lens 3 in the atmosphere on the workpiece in the laser focus 4. In the plasma shock wave (plasma shock wave) (5) is generated and propagated in all directions. The propagating shock wave strikes the surface of the workpiece, and if the force of the shock wave is greater than the contact strength between the polluting particle attached to the workpiece and the substrate, the polluted particles are removed from the surface of the workpiece (see Patent Application No. 2000). -73391; 5 December 2000).

이와같이 충격파에 의한 클리닝 방법은 표면 위 건식 미세 입자들의 제거에 우수한 성능을 가지고 있다. 이런 충격파의 이용과 함께 단파장 레이저빔 발생장치(21)를 이용한 단파장(보통 400 nm 이하의 자외선영역의 파장을 사용) 레이저빔(22)을 표면에 직접 조사함으로써 아주 효과적인 클리닝을 수행할 수 있다. 즉 표면에 조사된 단파장 레이저빔(22)은 작업물 표면의 유기오염물질(organic contaminants)의 제거에 우수한 특성을 나타낸다. 결과적으로 도 1과 같이 입자제거능력이 뛰어난 충격파를 이용하는 클리닝 방법과 유기 레이어(organic layer) 제거능력이 뛰어난 단파장 레이저를 이용하는 클리닝 방법의 병행사용은 반도체 웨이퍼와 같이 초청정도를 요구하는 표면 클리닝 공정으로 사용되어질 수 있다. 또한오염물질의 종류에 따라 각각의 다른 세정액을 사용하는 기존의 복잡한 습식 클리닝 공정과 달리, 도 1실시예는 클리닝 공정을 단순화, 일원화 및 범용화시킨 건식세정공정이라는 특징을 가지고 있다.Thus, the cleaning method by the shock wave has an excellent performance in removing the dry fine particles on the surface. In addition to the use of such a shock wave, a very effective cleaning can be performed by directly irradiating a short wavelength (usually using a wavelength in the ultraviolet region of 400 nm or less) laser beam 22 directly to the surface using the short wavelength laser beam generator 21. That is, the short-wavelength laser beam 22 irradiated to the surface exhibits excellent characteristics for removing organic contaminants from the surface of the workpiece. As a result, as shown in FIG. 1, the use of a cleaning method using a shock wave having excellent particle removal ability and a cleaning method using a short wavelength laser having excellent organic layer removal ability are surface cleaning processes requiring ultra-high precision like semiconductor wafers. Can be used. In addition, unlike the conventional complex wet cleaning process using different cleaning liquids depending on the type of contaminant, FIG. 1 is characterized by a dry cleaning process in which the cleaning process is simplified, unified and generalized.

또한 클리닝 면적 효율을 증가시키기 위해 단파장 레이저빔(22)을 조사시, 표면과 수직방향 뿐이 아닌 경사진 각도(??)를 가지고 조사할 수도 있다. 이때 조사각도는 작업물의 수직면에 대해 45o∼ 85o의 범위로 설정하면 높은 클리닝 면적효율과 레이저빔의 직접조사에 의한 작업물 표면의 손상가능성을 줄일 수 있다는 장점이 있다.In addition, when irradiating the short wavelength laser beam 22 to increase the cleaning area efficiency, it may be irradiated with an inclined angle (??) as well as the direction perpendicular to the surface. At this time, if the irradiation angle is set in the range of 45 o to 85 o with respect to the vertical surface of the workpiece, there is an advantage that the cleaning area efficiency and the possibility of damage to the workpiece surface by the direct irradiation of the laser beam can be reduced.

클리닝을 수행하는 시간을 단축하기 위해 작업대(9)의 중심축을 기준으로 작업물(6)을 회전시킬 수 있다. 이는 전면적 클리닝을 위해 일반적으로 수행하는 두방향 직선 스캔닝 방법과 비교해 시간적, 공간적으로 보다 효율적인 클리닝을 수행할 수 있다는 장점이 있다.In order to shorten the time for performing cleaning, the work piece 6 may be rotated about the central axis of the work table 9. This has the advantage of being able to perform more efficient cleaning in terms of time and space compared to the two-way linear scanning method that is generally performed for full-scale cleaning.

도 2는 본 발명에 따른 건식 표면 클리닝 장치의 제 2실시예를 도시한 개략도이다. 도 1에서 레이저 유기 플라즈마 충격파(보통 1064 nm의 근적외선 파장을 가진 Nd:YAG 레이저 사용)를 이용한 클리닝 장치와 단파장(파장이 100 nm ∼ 600 nm 범위) 레이저의 직접조사에 의한 클리닝 장치의 병행사용의 장점들이 설명되었다. 도 2는 도 1에서 설명된바와 같이 특성이 다른 두 가지 레이저빔(2, 22)을 하나의 레이저(1)에서 발생시켜 순차적으로 클리닝하는 실시예를 나타낸 것이다. 예를 들어 충격파를 이용한 클리닝을 위해 Nd:YAG 레이저 기본파장(1064 nm)의 레이저빔(2)을 스위칭미러(switching mirror)(26)와 반사미러(reflecting mirror)(28)를 통해 작업물(6) 표면 위로 전송시키며, 이때 레이저 초점(4)에서 발생하는 플리즈마 충격파를 이용하여 작업물(6) 표면의 입자제거 클리닝을 수행한다. 이후 작업물(6) 표면의 잔류하는 유기 입자 및 레이어(layer)의 정밀 제거를 위해, 스위칭미러(26)를 OFF상태로 하여 레이저에서 발생하는 기본파장 레이저빔을 주파수 하모닉 발생장치(frequency harmonic generator)(27)로 통과시킨다. 이때 입사된 Nd:YAG 레이저 기본 파장(1064 nm)은 주파수 하모닉 발생장치(27)를 통과하면서 반파장(532 nm), 1/3파장(355 nm), 혹은 1/4파장(266 nm)로 변조가 이루어지며, 이렇게 짧아진 단파장 레이저빔(short wavelength laser)을 초점렌즈(3)을 통해 작업물 표면에 직접조사함으로써 잔류하는 유기물질을 효과적으로 제거할 수 있게 된다. 또한 상기 예에서 제시한 방법의 순서를 바꾸어 1차로 단파장 레이저빔에 의한 유기물질 제거를 수행후 플라즈마 충격파에 의한 입자제거의 클리닝을 수행할 수도 있다. 도 2에서 제시된 실시예는 하나의 레이저를 가지고 수행한다는 측면에서 가격적으로 큰 추가부담 없이 다용도 클리닝을 수행할 수 있다는 특징이 있다.2 is a schematic view showing a second embodiment of a dry surface cleaning apparatus according to the present invention. 1 shows the parallel use of the cleaning device using a laser organic plasma shock wave (usually using Nd: YAG laser having a near infrared wavelength of 1064 nm) and the cleaning device by direct irradiation of a short wavelength (wavelength range of 100 nm to 600 nm) laser. The advantages are explained. FIG. 2 illustrates an embodiment in which two laser beams 2 and 22 having different characteristics as described in FIG. 1 are generated by one laser 1 and sequentially cleaned. For example, a Nd: YAG laser fundamental wavelength (1064 nm) laser beam (2) is used for cleaning using a shock wave through a switching mirror (26) and a reflecting mirror (28). 6) Transmitted onto the surface, at which time the dedusting cleaning of the surface of the workpiece 6 is performed using the plasma shock wave generated at the laser focus 4. Afterwards, in order to precisely remove the remaining organic particles and layers on the surface of the work piece 6, the harmonic generator generates a fundamental harmonic laser beam generated by the laser with the switching mirror 26 turned off. Pass through 27). At this time, the incident Nd: YAG laser fundamental wavelength (1064 nm) passes through the frequency harmonic generator 27 to half wavelength (532 nm), 1/3 wavelength (355 nm), or 1/4 wavelength (266 nm). Modulation is achieved, and the short wavelength laser beam can be irradiated directly to the workpiece surface through the focal lens 3 to effectively remove the remaining organic matter. In addition, by changing the order of the method presented in the above example, the organic material may be removed by the short wavelength laser beam and then the particles may be cleaned by the plasma shock wave. The embodiment shown in FIG. 2 is characterized in that it is possible to perform a multipurpose cleaning without a large additional cost in terms of performing with one laser.

본 발명에 따른 건식 표면 클리닝 장치는 다음과 같은 분야에 구체적으로 응용하여 실시할 수 있다.Dry surface cleaning apparatus according to the present invention can be carried out by applying specifically to the following fields.

1. 반도체 제조공정 중 반도체 웨이퍼 표면의 건식 세정(dry cleaning) 공정.1. Dry cleaning of semiconductor wafer surface during semiconductor manufacturing process.

2. 평판 디스플레이(예로 LCD, TFT, PDP, OLED, ELD 등) 제조공정 중 표면 세정 공정.2. Surface cleaning process during flat panel display (eg LCD, TFT, PDP, OLED, ELD, etc.) manufacturing process.

3. 미소전자부품 혹은 정밀 가공 렌즈 등의 제조 시 표면 클리닝 혹은 repair 공정.3. Surface cleaning or repair process in the manufacture of microelectronic components or precision processed lenses.

이상에서 설명한 바와 같이, 본 발명인 충격파를 이용한 건식 표면 클리닝 장치는 반도체 웨이퍼 및 평판 디스플레이 제조 공정중 표면 클리닝 공정으로의 적용이 가능하다. 이는 종래 세정 방법인 습식 클리닝 방법이 가지고 있는 환경적 문제, 대규모 장치에 따는 공간적 문제, 긴세정시간에 의한 생선성 문제, 열악한 작업환경 등의 문제들을 극복할 수 있는 청정 클리닝 방법이라는 특징을 가지고 있으며, 향후 고집적화, 웨이퍼크기의 대형화에 따른 단일 웨이퍼 처리방식(single wafer processing)에 있어 빠른 클리닝 속도 및 높은 효율, 그리고 한 장비로 다양한 오염물질을 제거할 수 있는 범용성을 가지고 있다는 효과를 제공한다.As described above, the dry surface cleaning apparatus using the shock wave of the present invention can be applied to the surface cleaning process of the semiconductor wafer and flat panel display manufacturing process. It is characterized by a clean cleaning method that can overcome the environmental problems of wet cleaning methods, which are conventional cleaning methods, space problems for large-scale equipment, fish problems caused by long cleaning time, and poor working environment. In addition, it provides fast cleaning speed, high efficiency, and versatility to remove various contaminants with one equipment in the single wafer processing method due to high integration and large wafer size in the future.

Claims (7)

레이저빔을 작업물 표면에 충돌시켜 작업물 표면의 오염입자를 제거하는 건식 표면 클리닝 방법에 있어서,A dry surface cleaning method in which a laser beam is bombarded onto a workpiece surface to remove contaminants on the workpiece surface. 플라즈마 충격파를 상기 작업물 표면에 충돌시킴으로써 표면의 오염물질을 제거하는 플라즈마 충격파에 의한 클리닝 단계와,Cleaning with a plasma shock wave that removes contaminants on the surface by impinging a plasma shock wave on the surface of the workpiece; 단파장 레이저빔을 상기 작업물 표면에 충돌시킴으로써 표면의 유기 오염물질을 제거하는 단파장 레이저빔에 의한 클리닝 단계를 포함하는 건식 표면 클리닝 방법.And cleaning with a short wavelength laser beam to remove organic contaminants on the surface by impinging the short wavelength laser beam on the workpiece surface. 제 1항에 있어서,The method of claim 1, 상기 단파장 레이저빔은 100 nm 내지 600 nm 의 파장범위의 단파장 레이저빔을 사용하는 것을 특징으로 하는 건식 클리닝 방법.The short wavelength laser beam is a dry cleaning method, characterized in that using a short wavelength laser beam in the wavelength range of 100 nm to 600 nm. 제 1항에 있어서,The method of claim 1, 상기 단파장 레이저빔을 작업물의 수직면을 기준으로 45o∼ 85o의 입사각도를 가지고 레이저빔을 직접 조사시키는 것을 특징으로 하는 건식 표면 클리닝 방법.And irradiating the short-wavelength laser beam directly with a laser beam having an angle of incidence of 45 ° to 85 ° with respect to the vertical plane of the workpiece. 제 1항에 있어서,The method of claim 1, 상기 단파장 레이저빔과 플라즈마 충격파를 함께 이용해 클리닝을 수행할 시, 작업대의 중심축을 기준으로 작업물을 회전시키며 클리닝을 수행하는 것을 특징으로 하는 건식 표면 클리닝 방법.And cleaning the workpiece by rotating the workpiece with respect to the central axis of the work table when the cleaning is performed by using the short wavelength laser beam and the plasma shock wave. 레이저빔을 작업물 표면에 충돌시켜 작업물 표면의 오염물질을 제거하는 건식 표면 클리닝 장치에 있어서,A dry surface cleaning apparatus for removing contaminants on a workpiece surface by colliding a laser beam with the workpiece surface, 플라즈마 충격파를 발생시켜 상기 작업물 표면에 조사하는 충격파 레이저빔 발생장치와,A shock wave laser beam generator for generating a plasma shock wave and irradiating the surface of the workpiece; 단파장 레이저빔을 발생시켜 상기 작업물 표면에 조사하는 단파장 레이저빔 발생장치와,A short wavelength laser beam generator for generating a short wavelength laser beam and irradiating the surface of the workpiece; 상기 작업물을 고정하는 작업대로 이루어지는 것을 특징으로 하는 건식 표면 클리닝 장치.Dry surface cleaning apparatus comprising a workbench for fixing the workpiece. 레이저빔을 작업물 표면에 충돌시켜 작업물 표면의 오염물질을 제거하는 건식 표면 클리닝 장치에 있어서,A dry surface cleaning apparatus for removing contaminants on a workpiece surface by colliding a laser beam with the workpiece surface, 플라즈마 충격파를 발생시키는 플라즈마 충격파 발생장치와,A plasma shock wave generator for generating a plasma shock wave, 상기 플라즈마 충격파의 광로를 선택적으로 분리하기 위해 광로 상에 설치되는 스위칭 미러(switching mirror)와,A switching mirror installed on the optical path for selectively separating the optical path of the plasma shock wave, 상기 분리된 광로 중 어느 하나의 광로의 레이저빔을 단파장 레이저빔으로변조시키기 위해 설치되는 주파수 하모닉 발생장치(frequency harmonic generator)와,A frequency harmonic generator installed to modulate the laser beam of any one of the separated optical paths into a short wavelength laser beam; 상기 작업물을 고정하는 작업대로 이루어지는 것을 특징으로 하는 건식 표면 클리닝 장치.Dry surface cleaning apparatus comprising a workbench for fixing the workpiece. 제 5항 또는 제 6항에 있어서,The method according to claim 5 or 6, 상기 플라즈마 충격파는 기본 파장이 1064 nm인 Nd:YAG 레이저빔으로 사용하며, 상기 주파수 하모닉 발생장치는 상기 플라즈마 충격파를 파장이 532 nm(반파장), 355 nm(1/3 파장), 266 nm(1/4 파장)인 단파장 레이저 빔(short wavelength laser)으로 변조시키는 것을 특징으로 하는 건식 표면 클리닝 장치.The plasma shock wave is used as an Nd: YAG laser beam having a fundamental wavelength of 1064 nm, and the frequency harmonic generator uses the plasma shock wave as a wavelength of 532 nm (half wavelength), 355 nm (1/3 wavelength), and 266 nm ( Dry surface cleaning apparatus, characterized in that modulated with a short wavelength laser (1/4 wavelength).
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