KR20020028971A - Apparatus for sterilization of nosocomial airborne infectious bacteria/fungus by non-thermal plasma combined electro-oxidation catalysis. - Google Patents

Apparatus for sterilization of nosocomial airborne infectious bacteria/fungus by non-thermal plasma combined electro-oxidation catalysis. Download PDF

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KR20020028971A
KR20020028971A KR1020020012030A KR20020012030A KR20020028971A KR 20020028971 A KR20020028971 A KR 20020028971A KR 1020020012030 A KR1020020012030 A KR 1020020012030A KR 20020012030 A KR20020012030 A KR 20020012030A KR 20020028971 A KR20020028971 A KR 20020028971A
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bacteria
non
sterilization
apparatus
catalyst electrode
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KR1020020012030A
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Korean (ko)
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임창규
안덕호
안덕
김기훈
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(주)유니에코
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    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION, OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS, OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS, OR SURGICAL ARTICLES
    • A61L9/00Disinfection, sterilisation or deodorisation of air
    • A61L9/16Disinfection, sterilisation or deodorisation of air using physical phenomena
    • A61L9/18Radiation
    • A61L9/20Ultra-violet radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425Making electrodes

Abstract

PURPOSE: Provided is an apparatus for sterilizing air-mediated infectious bacteria in hospitals by non-heating plasma using an oxidizing semiconductor catalyst electrode, whereby it is possible to safely and rapidly treat bacteria in the hospitals without secondary air contamination. CONSTITUTION: The apparatus comprises a dust collecting part as a pretreatment filter for filtering dusts in the rooms and a non-heating plasma part for generating plasma. The non-heating plasma part is provided with a UV lamp having a wavelength of 260 to 280 nm to excite bacteria. The bacteria excited by the UV lamp are attached to surfaces of the oxidizing semiconductor catalyst. On the catalyst surface, the bacteria are killed by high voltage impact. Also, electrons or pores separated from the catalyst surface by electric energy generate hydroxy radicals, which penetrate into bacteria to destroy them. The oxidizing semiconductor catalyst electrode has a composition of T-M-MO, in which T is titanium dioxide, M is a metal such as titanium, silver, vanadium, cobalt, copper, platinum, and MO is an oxide of a metal such as silver, vanadium, cobalt, and copper.

Description

산화촉매보조 비가열 플라즈마에 의한 병원내 공기매개 감염균의 살균장치 {Apparatus for sterilization of nosocomial airborne infectious bacteria/fungus by non-thermal plasma combined electro-oxidation catalysis.} Of air-mediated pathogen hospital by a secondary oxidation catalyst ratio in the thermal plasma sterilizer {Apparatus for sterilization of nosocomial airborne infectious bacteria / fungus by non-thermal plasma combined electro-oxidation catalysis.}

본 발명은 산화성 반도체 촉매전극에 의하여 제조된, 병원내 공기매개 감염균인 그람음성간균 및 황색포도상균을 살균하는 비가열 플라즈마 장치에 관한 것으로써, 병원감염을 일으키는 박테리아를 전기 충격 분해 방법을 적용함으로써 신속하게 살균을 하면서도 2차 오염물질의 발생이 없는 장치를 제공하기 위한 것이다. The present invention by applying to be written, the hospital bacterium electric shock decomposition methods that cause infection of the non-heat plasma device for sterilizing a gram-negative rod, the air-mediated pathogen hospital prepared by the oxidizing catalyst electrode and yellow Staphylococcus quickly while sterilization is to provide a device without the occurrence of secondary pollutants.

병원내 공기매개 감염균을 살균하기 위하여 화학적인 살균법과 물리적인 살균법을 적용하여 오고 있다. My airborne hospital pathogen has been by applying a chemical sterilizing method and physical pasteurization to sterilization. 여기서 화학적인 살균법은 주로 포르마린 가스 살균과 에틸렌 옥사이드(Ethylene Oxide) 가스 살균을 적용하고 있으나 포르마린은 잔류독성 성분으로 피부, 눈에 자극성이 있으며 대기로 방출될 시 2차 대기 오염을 일으킬 수 있다. Wherein the chemical disinfection method are however, mainly applicable to poreumarin gas sterilization with ethylene oxide (Ethylene Oxide) gas sterilization poreumarin may be irritating to skin, eyes remaining toxic components can lead to secondary air pollution upon being released to the atmosphere. 또한 에틸렌 옥사이드 가스 역시 피부손상, 점막자극 작용, 용혈 작용을 일으키며 2차 대기 오염을 일으킨다. Also causes the ethylene oxide gas also damaged skin, mucosa stimulating effect, hemolytic action causes the secondary air pollution. 이러한 모든 화학적인 살균방법은 잔류독성으로 가스 살균시 환자를 안전한 장소로 이송 격리하여야 하며, 살균 구역을 철저히 밀폐하여야 하는 문제점들이 있어서 실제 병원에서 적용하기에는 어려운 실정이다. All chemical disinfection methods such as residual toxicity shall be transported isolated patients when gas sterilization in a safe place, is difficult in hagieneun are issues that must be thoroughly sealed sterile areas applied in an actual hospital.

그리고 물리적인 살균법에는 전자선 조사에 의한 살균방법이 있으나 살균부위가 극히 한정이 되며, 장비의 가격이 고가이므로 현실적용에는 부적합하다. And physical sterilization law, but this method of sterilization by electron beam irradiation is a sterilization area is extremely limited, since the cost of expensive equipment is not suitable for real applications.

본 발명은 이와 같은 제결점을 해결하기 위하여 안출된 것으로서, 산화성 반도체 촉매전극과 이에 고전압 펄스 전원을 플라즈마 생성의 에너지원으로 사용하고, 이에 병행하여 260∼280nm의 파장을 가지는 자외선 램프를 사용함으로써 병원내 공기매개 감염균을 살균함에 그 목적을 두고 있다. The present invention, by using this as a hospital such as the claim made in view of solving the disadvantages, using an oxidizing electrode catalyst and its high-voltage pulse power source as an energy source for plasma generation, parallel thereto using a UV lamp having a wavelength of 260~280nm As sterilized in airborne pathogen has its purpose.

〈과제를 해결하기 위한 수단〉 <Means for Solving the Problems>

본 발명의 기본구조는 실내의 미세 먼지를 걸러주는 전처리 필터로써의 집진부와 자외선 램프부, 플라즈마를 생성시키는 비가열 플라즈마부로 구성된다. The basic structure of the present invention is configured to produce a ratio of parts of the thermal plasma and a dust collecting part UV lamp unit, a plasma as a pre-processing filter that filters the fine dust in the room.

박테리아는 기본적인 구조로써 세균 포자막으로 둘러 싸여있는 원형질로서 이루어져 있다(도1). Bacteria is made as the plasma, which is surrounded by bacteria it included subtitles as the basic structure (FIG. 1). 이러한 박테리아는 수분과 밀접한 관계가 있어서 수분이 있는 환경에서 대수증식작용을 하며,원형질에는 65∼90%의 수분을 함유하고 있다. These bacteria function in a logarithmic growth is closely related to the moisture in the moist environment, the plasma has to contain 65-90% of water. 본 발명의 기본원리는 이러한 수분을 이용하여 박테리아를 살균하는 것에 기초를 두고 있다. The basic principle behind the invention is based as sterilizing bacteria by using such water.

산화성 반도체 촉매의 기본 작용은 전기에너지에 의한 전자 및 정공의 생성, 전자 및 정공의 표면에로의 이동 및 전하분리, 전자 및 정공에 포착된 표면 활성종의 생성, 이러한 활성종에 의한 반응이 일어나는 중간 생성물 및 최종 생성물로 이루어진다. The default action of the oxidizing catalyst is taking place the electronics and the creation of a hole, the electron and the moving and charge separation to the surface of the hole, the electron and the surface generation of active species captured on the hole, and the reaction caused by these active species by the electrical energy It made of intermediates and final products.

또한 병원균은 산화성 반도체 촉매 표면에서 흡착 →분해 →탈착의 과정을 거치게 된다. In addition, pathogens are subjected to the process of adsorption desorption → → decomposition in an oxidizing catalyst surface.

따라서 전기화학적인 측면에서 살펴보면 So look at the electrochemical aspects

첫째,자외선 램프의 전자선에 의하여 여기된 박테리아가 산화성 반도체 촉매 표면에 흡착되고, First, the bacteria excited by the electron beam of the UV lamp is adsorbed to oxidizing catalyst surface,

둘째, 흡착된 박테리아는 교류 15∼30kV와 펄스전원 10∼20kV에 의하여 세균포자막이 파괴된다 Second, the bacteria are adsorbed bacteria by Four caption exchange 15~30kV the pulse power is destroyed 10~20kV

셋째, 포자막 파괴에 의하여 내부 원형질 내의 수분이 고전압의 전자 및 펄스 충격파에 의하여 파괴된다. Third, the water within the inner plasma by Po subtitle destruction is destroyed by the shock waves of the high-voltage pulse and e.

그리고 촉매 작용 측면에서 살펴보면 대기중 수분에 대한 작용으로 나누어 볼 수 있는데 대기중 수분에 대하여는 Looking at the side and can be divided catalyzed by the action of the moisture in the atmosphere there with respect to atmospheric moisture

촉매 표면 + 전기에너지 → e - + h + The catalyst surface electric energy + → e - + h +

h + + H 2 O →·OH + H + h + + H 2 O → · OH + H +

(e - , h + : 전기에너지에 의하여 촉매 표면에 분리된 전자 및 정공) (e -, h +: The electrons and holes are separated on the surface of the catalyst by electric energy)

여기에서 OH라디칼은 강력한 살균력을 가진 활성종으로써 박테리아의 포자막을 침투하여 살균하는 작용을 가지고 있다. Here OH radicals as active species has a strong bactericidal effect of sterilization has to penetrate the fabric subtitles for bacteria.

다음으로 원형질내의 수분에 대하여 살펴보면 앞서의 고전압 전기 충격에 의하여 파괴된 포자막을 통하여 Next, look at with respect to water in the plasma through the fabric subtitle destroyed by the high-voltage electric shock, the prior

h + + H 2 O →·OH + H + h + + H 2 O → · OH + H +

로써 동일한 작용을 일으킨다. It causes the same effect as.

이상의 모든 과정을 살펴보면 Looking at the whole process more

박테리아 + 자외선 램프 → 여기된 박테리아 (1) The bacteria here → bacteria + UV lamp (1)

여기된 박테리아 + 고전압 충격 →세포막 파괴 및 원형질 살균 (2) The bacteria + → high-voltage shock, and the plasma cell membrane destructive sterilization here (2)

h + - H 2 O(대기중 수분) →·OH + H + (3) h + - H 2 O (water in the air) → · OH + H + ( 3)

h + + H 2 O(원형질내 수분) → ·OH + H + (4) h + + H 2 O (water content in the plasma) → · OH + H + ( 4)

박테리아의 원형질 + ·OH →박테리아의 살균 (5) Plasma + · OH → sterilization of bacteria, the bacteria (5)

와 같은 과정을 거쳐 신속한 살균이 이루어진다. Through a process such as is made rapid sterilization.

《실시 예》 "Example"

〈산화성 반도체 촉매전극 제조> <Oxidizing catalyst electrode prepared>

티타늄 알콕사이드를 5wt% 황산수용액/알콕사이드 몰비를 50으로 하여 두 용액을 혼합한 후 2∼3시간 교반하여 가수분해 반응을 일으킨다. After the titanium alkoxide with a 5wt% aqueous solution of sulfuric acid / alkoxide molar ratio of 50 mixing the two solution was stirred 2-3 hours to cause a hydrolysis reaction. 이에서 얻어진 올소티탄산(orthotitanic acid) 100g을 기준으로 하여 4wt% 수산화리듐수용액 20∼30g, 메타놀 1.5∼3.0g과 1wt% 염화백금산 5∼15g을 혼합하여 고압수은 등 조사하에서 1∼5시간 교반한다. Based on the ortho-titanate (orthotitanic acid) 100g The resultant standing by mixing a 4wt% aqueous solution of lithium hydroxide 20~30g, 1.5~3.0g methanol and 1wt% chloroplatinic acid 5~15g stir 1-5 hours under irradiation, such as high-pressure mercury . 그 후 산화비스무스 5∼10g을 혼합하여 1∼5시간 교반한 후 10% 암모니아수에 20∼25wt%로 용해시킨 요오드화은 또는 요오드화 칼륨을 5∼40g을 투입하고 오산화바나듐, 삼산화 텅그스텐, 삼산화 모리브덴을 각각 1∼5g, 이산화망간을 5∼25g, 산화구리를 10∼40g, 산화코발트를 1∼2g 투입하여 2∼8시간 최종 교반한다. After mixing by putting the 5~40g which silver iodide or potassium iodide dissolved in 20~25wt% to 10% aqueous ammonia was stirred for 1-5 hours 5~10g bismuth oxide and vanadium pentoxide, antimony trioxide teonggeu stent trioxide molybdenum in each 1~5g, 5~25g manganese dioxide, 10~40g, cobalt oxide, copper oxide and the mixture was 1~2g the final 2-8 hours.

분산이 완료된 반도체 조성물을 스테인레스 메쉬 또는 스테인레스 매트 또는 니켈 소결매트에 코팅한 후 350∼500℃에서 6∼12시간 소성하여 최종 산화성 반도체 촉매전극을 얻는다. After the dispersion is coated to complete the semiconductor composition to a stainless steel mesh or sintered stainless steel mats or nickel matte 6-12 hours calcined at 350~500 ℃ to obtain a final oxidizing catalyst electrode.

도1은 영양물질, 살균제 등의 박테리아 세포 포자막 투과성 FIG. 1 is a permeable fabric subtitles such as nutrients, fungicides bacterial cells

도2는 살균장치의 기본 배치도(이동식) Figure 2 is a basic arrangement (movable) in the sterilizer

도3은 실시예에 의한 실험결과 Figure 3 is the experimental results according to Example

〈도면의 주요 부분에 대한 부호의 설명> <Description of the Related Art>

(1) 전처리 집진 필터 (1) pre-dust filter

(2) 자외선 램프 (2) UV lamp

(3) 산화성 반도체 촉매전극 (3) the oxidizing catalyst electrode

(4) 배출팬 4, the exhaust fan

. .

상기한 바와 같이 본 발명은 전기에너지에 의하여 산화성 반도체 표면에 전자-정공을 형성시킴과 동시에 고전장에 의하여 박테리아를 살균처리함으로써 병원실내에 있는 세균을 2차 대기오염 없이 안전하게 또한 신속하게 처리할 수 있는 장치로써 병원내 공기매개 감염균을 살균하여 2차 감염을 최소화할 수 있다. The present invention as described above, an electron oxidizing the semiconductor surface by an electrical energy - which can, by and simultaneously a hole formed sterilizing bacteria by gojeonjang securely bacteria in the hospital room, without the secondary air pollution also expedite to kill airborne pathogen within the hospital as the device can minimize secondary infections.

Claims (3)

  1. 박테리아를 여기시키기 위하여 260∼280nm의 파장을 가진 자외선 램프를 설치하는 구조. Structure for fitting a UV lamp with a wavelength of 260~280nm for exciting the bacteria.
  2. 산화성 반도체 촉매전극의 제조 방법에 있어서 다음의 구성식을 가진 것으로써 In the production method of the oxidizing catalyst electrode written as having the following configuration of the formula
    TM-MO TM-MO
    여기에서 T는 이산화 티타늄, M은 금속으로써 티타늄, 은, 바나듐, 코발트, 구리, 백금에 해당하며, MO는 금속산화물로써 산화은, 오산화바나듐, 산화코발트, 산화구리에 해당하며, 이를 바탕으로 제조한 산화성 반도체 촉매전극. Where T is as titanium dioxide, M is a metal of titanium, silver, vanadium, and that a cobalt, copper, platinum, and MO corresponds to the silver oxide, vanadium pentoxide, cobalt oxide, copper oxide as a metal oxide, manufactured based on this oxidizing catalyst electrode.
  3. 산화성 반도체 촉매전극과 비가열 플라즈마부에 교류 15∼30kV와 펄스 전원 10∼20kV를 인가하여 병원내 공기매개 감염균을 살균하는 장치. Applying an oxidizing catalyst electrode and a non-heat exchange 15~30kV 10~20kV the pulse power to the plasma unit to the device for sterilizing air in hospital mediated pathogen.
KR1020020012030A 2002-03-06 2002-03-06 Apparatus for sterilization of nosocomial airborne infectious bacteria/fungus by non-thermal plasma combined electro-oxidation catalysis. KR20020028971A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7771672B2 (en) 2005-12-17 2010-08-10 Airinspace B.V. Air purification device
US8003058B2 (en) 2006-08-09 2011-08-23 Airinspace B.V. Air purification devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7771672B2 (en) 2005-12-17 2010-08-10 Airinspace B.V. Air purification device
US8003058B2 (en) 2006-08-09 2011-08-23 Airinspace B.V. Air purification devices

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