KR19980078743A - High Frequency Etching Head Insert Plates in Semiconductor Sputtering Equipment - Google Patents

Abstract

The present invention relates to a high frequency etching head insert plate of a semiconductor sputtering apparatus, which prevents particle generation due to contact with a ceramic ring shield when a wafer fixed to a wafer clip is lowered. In order to avoid contact with the ceramic ring shield 114 in the lowered position, the edges of the ceramic ring shield 114 are formed by forming a rounded shape 110a.

Therefore, since the edge of the insert plate is formed in a round shape, even if the stop position of the transfer plate causes some error, the edge of the ceramic ring shield and the edge of the insert plate do not contact each other when the wafer is down, so that the surface of the ceramic ring shield The deposited film quality can be prevented from falling out to generate particles, thereby preventing the process defects caused by the particles.

Description

High Frequency Etching Head Insert Plates in Semiconductor Sputtering Equipment

The present invention relates to a high-frequency etched head insert plate of a semiconductor sputtering equipment, and more particularly, to a semiconductor that prevents particle generation due to contact with a ceramic ring shield when a wafer fixed to a wafer clip is lowered. A high frequency etch head insert plate of a sputtering apparatus.

Figure 1 shows the installation state of the insert plate in the semiconductor sputtering equipment, the insert plate 10 is also called a heater block (Heater Block), at least a flat shape having a larger area than the wafer (W), both corners It is kept at a right angle.

The wafer W is fixed to the insert plate 10 by being edged by the wafer clip 11. At this time, the wafer clip 11 is fixed to the ceramic ring 12, and the ceramic ring 12 is mounted to the transfer plate 13.

In addition, the ceramic ring 12 is protected by the ceramic ring shield 14, and the ceramic ring shield 14 is also configured to be mounted to the transfer plate (13).

This conventional configuration is characterized in that the ceramic ring shield 14 and the transfer plate 13 are at the edge of the insert plate 10 when the wafer W fixed to the wafer clip 11 is brought down to the insert plate 10. The gap between the part and 4 mm is maintained.

Therefore, as shown in FIG. 2, when the stop position of the transfer plate 13 is shifted even by 1 mm, the gap between the ceramic ring shield 14 and the insert plate 10 is very narrow when the wafer W is down. As a result, the edge of the ceramic ring shield 14 and the edge of the insert plate 10 collide with each other.

As a result, the film quality deposited on the surface of the ceramic ring shield 14 is released to generate particles, thereby causing a process defect.

The present invention is to solve the conventional problems as described above, its purpose is to avoid contact with the edge of the ceramic ring shield when the wafer is lowered to prevent the process defects caused by particles generated by contact To provide a high frequency etch head insert plate of a semiconductor sputtering equipment.

1 is a cross-sectional structural view of a main portion of a semiconductor sputtering apparatus showing a conventional insert plate.

Figure 2 is a wafer down state diagram showing the particle generation process by the conventional insert plate.

Fig. 3 is a cross sectional structural view of a main portion of a semiconductor sputtering apparatus showing the insert plate of the present invention.

※ Explanation of symbols for main parts of drawing

10, 110: insert plate 11, 111: wafer clip

12, 112: ceramic ring 13, 113: transfer plate

14, 114: ceramic ring shield W: wafer

The above object is provided with a ceramic ring mounted on a transfer plate and protected by a ceramic ring shield, and the wafer is fixed with a wafer clip fixed to the ceramic ring, where the wafer is placed during the lowering of the wafer for etching. In the high frequency etching head insert plate, the high frequency etching insert of the semiconductor sputtering equipment, characterized in that formed in the rounded shape of both corners facing the edge of the ceramic ring shield so as not to contact the ceramic ring shield in the lowered position of the wafer. It can be achieved by a plate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 3 shows a high frequency etching head insert plate of a semiconductor sputtering apparatus according to the present invention, in which a ceramic ring 112 is mounted on a transfer plate 113, and the edge of the wafer W is attached to the ceramic ring 112. The wafer clip 111 to be fixed is fixed.

In addition, the ceramic ring 112 is wrapped and protected by the ceramic ring shield 114, and the ceramic ring shield 114 is also mounted on the transfer plate 113.

An insert plate 110 is positioned below the wafer W fixed to the wafer clip 111. The insert plate 110 has an area larger than at least the wafer W and is flat and rounded at both edges. It is a structure formed in the shape 110a.

According to the present invention having the above configuration, when the transfer plate 113 is lowered to the stop position in order to position the wafer W fixed on the wafer clip 111 on the insert plate 110 during the etching process, it is shown in FIG. As shown, both edges of the insert plate 110 are formed in a rounded shape 110a so that the edges of the ceramic ring shield 114 mounted on the transfer plate 113 are not in contact with each other to protect the ceramic ring 112. .

Therefore, even if the stop position (Stop Position) of the transfer plate 113 occurs to some extent, the gap between the ceramic ring shield 114 and the insert plate 110 is maintained when the wafer W is down, so that the ceramic ring shield 114 Since the edges and the edges of the insert plate 110 are not in contact with each other, the film deposited on the surface of the ceramic ring shield 114 may be prevented from generating particles due to the contact.

As described above, according to the high frequency etching head insert plate of the semiconductor sputtering apparatus according to the present invention, since the corner portion of the insert plate is formed in a rounded shape, even when the stop position of the transfer plate causes an error to some extent, Since the edges of the ceramic ring shield and the edges of the insert plate are not in contact with each other, the film quality deposited on the surface of the ceramic ring shield may fall and prevent particles from being generated, thereby preventing process defects caused by particles.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (1)

A high frequency etching head insert of a semiconductor sputtering facility in which a ceramic ring is mounted on a transfer plate and protected by a ceramic ring shield, and the wafer is fixed by a wafer clip fixed to the ceramic ring so that the wafer is placed when the wafer is lowered for the etching process. In the plate, The high frequency etching insert plate of the semiconductor sputtering equipment, characterized in that formed in a rounded shape on both edges facing the edge of the ceramic ring shield in contact with the ceramic ring shield in the lowered position of the wafer.