KR102820384B1 - 이온 밀링 장치 - Google Patents

이온 밀링 장치 Download PDF

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Publication number
KR102820384B1
KR102820384B1 KR1020237038765A KR20237038765A KR102820384B1 KR 102820384 B1 KR102820384 B1 KR 102820384B1 KR 1020237038765 A KR1020237038765 A KR 1020237038765A KR 20237038765 A KR20237038765 A KR 20237038765A KR 102820384 B1 KR102820384 B1 KR 102820384B1
Authority
KR
South Korea
Prior art keywords
ion
ion beam
shutter
anode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237038765A
Other languages
English (en)
Korean (ko)
Other versions
KR20230169280A (ko
Inventor
쇼타 아이다
히사유키 다카스
겐토 호리노우치
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20230169280A publication Critical patent/KR20230169280A/ko
Application granted granted Critical
Publication of KR102820384B1 publication Critical patent/KR102820384B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/04Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/024Moving components not otherwise provided for
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0473Changing particle velocity accelerating
    • H01J2237/04735Changing particle velocity accelerating with electrostatic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24571Measurements of non-electric or non-magnetic variables
    • H01J2237/24585Other variables, e.g. energy, mass, velocity, time, temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31745Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020237038765A 2021-05-27 2021-05-27 이온 밀링 장치 Active KR102820384B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/020112 WO2022249371A1 (ja) 2021-05-27 2021-05-27 イオンミリング装置

Publications (2)

Publication Number Publication Date
KR20230169280A KR20230169280A (ko) 2023-12-15
KR102820384B1 true KR102820384B1 (ko) 2025-06-16

Family

ID=84229552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237038765A Active KR102820384B1 (ko) 2021-05-27 2021-05-27 이온 밀링 장치

Country Status (4)

Country Link
US (1) US20240258062A1 (https=)
JP (1) JP7556144B2 (https=)
KR (1) KR102820384B1 (https=)
WO (1) WO2022249371A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016189614A1 (ja) 2015-05-25 2016-12-01 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング方法
DE102016105462A1 (de) 2015-11-26 2017-06-01 Von Ardenne Gmbh Ionenstrahlquelle, Prozessieranordnung und Verfahren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6100619B2 (ja) 2013-06-04 2017-03-22 株式会社日立ハイテクノロジーズ イオン源およびイオンミリング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016189614A1 (ja) 2015-05-25 2016-12-01 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング方法
DE102016105462A1 (de) 2015-11-26 2017-06-01 Von Ardenne Gmbh Ionenstrahlquelle, Prozessieranordnung und Verfahren

Also Published As

Publication number Publication date
US20240258062A1 (en) 2024-08-01
KR20230169280A (ko) 2023-12-15
JP7556144B2 (ja) 2024-09-25
WO2022249371A1 (ja) 2022-12-01
JPWO2022249371A1 (https=) 2022-12-01

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Patent event date: 20250610

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