KR102809463B1 - 가열 처리 장치 및 가열 처리 방법 - Google Patents

가열 처리 장치 및 가열 처리 방법 Download PDF

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Publication number
KR102809463B1
KR102809463B1 KR1020200076940A KR20200076940A KR102809463B1 KR 102809463 B1 KR102809463 B1 KR 102809463B1 KR 1020200076940 A KR1020200076940 A KR 1020200076940A KR 20200076940 A KR20200076940 A KR 20200076940A KR 102809463 B1 KR102809463 B1 KR 102809463B1
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South Korea
Prior art keywords
suction
container
treatment device
heating
substrate
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Korean (ko)
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KR20210003048A (ko
Inventor
신스케 다카키
야스히로 구가
유키노부 오츠카
신이치 사가라
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도쿄엘렉트론가부시키가이샤
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    • H01L21/67103—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/08—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D3/0084—Charging; Manipulation of SC or SC wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H01L21/67017—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020200076940A 2019-07-01 2020-06-24 가열 처리 장치 및 가열 처리 방법 Active KR102809463B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-122961 2019-07-01
JP2019122961A JP7261675B2 (ja) 2019-07-01 2019-07-01 加熱処理装置及び加熱処理方法

Publications (2)

Publication Number Publication Date
KR20210003048A KR20210003048A (ko) 2021-01-11
KR102809463B1 true KR102809463B1 (ko) 2025-05-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200076940A Active KR102809463B1 (ko) 2019-07-01 2020-06-24 가열 처리 장치 및 가열 처리 방법

Country Status (5)

Country Link
US (1) US11393702B2 (https=)
JP (1) JP7261675B2 (https=)
KR (1) KR102809463B1 (https=)
CN (2) CN112185847B (https=)
TW (1) TWI842910B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7261675B2 (ja) * 2019-07-01 2023-04-20 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP7441665B2 (ja) * 2020-02-10 2024-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TW202324499A (zh) 2021-11-05 2023-06-16 日商東京威力科創股份有限公司 加熱處理裝置、加熱處理方法及電腦記憶媒體
JP7795962B2 (ja) * 2022-04-26 2026-01-08 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP2023167845A (ja) 2022-05-13 2023-11-24 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
CN115394636B (zh) * 2022-10-26 2023-01-03 广州粤芯半导体技术有限公司 半导体光刻方法、系统、设备和计算机可读存储介质
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102828824B1 (ko) * 2024-05-09 2025-07-04 엠투에스 주식회사 오븐 유닛을 구비한 코팅 액 도포 시스템

Citations (4)

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JP2003347198A (ja) 2002-05-28 2003-12-05 Tokyo Electron Ltd 基板ベーク装置、基板ベーク方法及び塗布膜形成装置
JP2008177494A (ja) * 2007-01-22 2008-07-31 Tokyo Electron Ltd 加熱装置、加熱方法及び記憶媒体
JP2009088384A (ja) * 2007-10-02 2009-04-23 Sokudo:Kk 基板処理装置
JP2010232415A (ja) 2009-03-27 2010-10-14 Tokyo Electron Ltd 基板熱処理装置

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JPH0793270B2 (ja) * 1991-02-15 1995-10-09 株式会社半導体プロセス研究所 半導体製造装置及びその使用方法
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
KR100693475B1 (ko) * 2005-01-24 2007-04-16 이앙구 반도체 설비의 부산물 포집장치
JP4519087B2 (ja) * 2006-03-02 2010-08-04 東京エレクトロン株式会社 熱処理装置
JP4781901B2 (ja) * 2006-05-08 2011-09-28 東京エレクトロン株式会社 熱処理方法，プログラム及び熱処理装置
JP4737083B2 (ja) * 2006-12-28 2011-07-27 東京エレクトロン株式会社 加熱装置及び塗布、現像装置並びに加熱方法
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JP6384414B2 (ja) * 2014-08-08 2018-09-05 東京エレクトロン株式会社 基板加熱装置、基板加熱方法、記憶媒体
JP6406192B2 (ja) 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
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JP2003347198A (ja) 2002-05-28 2003-12-05 Tokyo Electron Ltd 基板ベーク装置、基板ベーク方法及び塗布膜形成装置
JP2008177494A (ja) * 2007-01-22 2008-07-31 Tokyo Electron Ltd 加熱装置、加熱方法及び記憶媒体
JP2009088384A (ja) * 2007-10-02 2009-04-23 Sokudo:Kk 基板処理装置
JP2010232415A (ja) 2009-03-27 2010-10-14 Tokyo Electron Ltd 基板熱処理装置

Also Published As

Publication number Publication date
JP7261675B2 (ja) 2023-04-20
TWI842910B (zh) 2024-05-21
CN112185847B (zh) 2025-07-25
TW202119524A (zh) 2021-05-16
KR20210003048A (ko) 2021-01-11
CN112185847A (zh) 2021-01-05
JP2021009923A (ja) 2021-01-28
US20210005468A1 (en) 2021-01-07
US11393702B2 (en) 2022-07-19
CN213042875U (zh) 2021-04-23

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