KR102484157B1 - 변조된 이미지 캡처를 위한 시스템 및 방법 - Google Patents

변조된 이미지 캡처를 위한 시스템 및 방법 Download PDF

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KR102484157B1
KR102484157B1 KR1020197022403A KR20197022403A KR102484157B1 KR 102484157 B1 KR102484157 B1 KR 102484157B1 KR 1020197022403 A KR1020197022403 A KR 1020197022403A KR 20197022403 A KR20197022403 A KR 20197022403A KR 102484157 B1 KR102484157 B1 KR 102484157B1
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charge
collecting
modulation
voltage
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KR20190127677A (ko
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존 포이코넨
아리 파시오
미카 라이호
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코빌타 오와이
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • H01L27/146—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N5/369—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
KR1020197022403A 2017-03-19 2018-03-16 변조된 이미지 캡처를 위한 시스템 및 방법 Active KR102484157B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20170044 2017-03-19
FI20170044 2017-03-19
PCT/FI2018/050195 WO2018172610A1 (en) 2017-03-19 2018-03-16 Systems and methods for modulated image capture

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KR20190127677A KR20190127677A (ko) 2019-11-13
KR102484157B1 true KR102484157B1 (ko) 2023-01-03

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US (1) US11411027B2 (https=)
EP (1) EP3602109B1 (https=)
JP (1) JP7149616B2 (https=)
KR (1) KR102484157B1 (https=)
CN (1) CN110431441B (https=)
SG (1) SG11201906657QA (https=)
WO (1) WO2018172610A1 (https=)

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JP2022002229A (ja) * 2018-09-05 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および撮像素子
JP6641442B1 (ja) * 2018-10-16 2020-02-05 浜松ホトニクス株式会社 光検出素子及び光検出装置
KR102704197B1 (ko) * 2019-12-12 2024-09-09 에스케이하이닉스 주식회사 이미지 센싱 장치
US20210257396A1 (en) * 2020-02-19 2021-08-19 Pointcloud Inc. Backside illumination architectures for integrated photonic lidar
CN111341797B (zh) * 2020-03-09 2022-10-28 宁波飞芯电子科技有限公司 光电转换元件及图像传感器
KR102883963B1 (ko) * 2021-01-12 2025-11-10 에스케이하이닉스 주식회사 이미지 센싱 장치
JP7566677B2 (ja) 2021-03-23 2024-10-15 株式会社東芝 光検出器
KR20230055605A (ko) * 2021-10-19 2023-04-26 에스케이하이닉스 주식회사 이미지 센싱 장치
US12289116B2 (en) 2021-11-15 2025-04-29 Samsung Electronics Co., Ltd. Analog-to-digital converting circuit using auto-zero period optimization and operation method thereof
KR20230116402A (ko) * 2022-01-28 2023-08-04 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2023133816A (ja) * 2022-03-14 2023-09-27 ソニーセミコンダクタソリューションズ株式会社 測距装置

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Publication number Publication date
US20210134854A1 (en) 2021-05-06
CN110431441B (zh) 2023-09-15
CN110431441A (zh) 2019-11-08
KR20190127677A (ko) 2019-11-13
EP3602109B1 (en) 2021-01-20
WO2018172610A1 (en) 2018-09-27
JP7149616B2 (ja) 2022-10-07
EP3602109A1 (en) 2020-02-05
US11411027B2 (en) 2022-08-09
JP2020515085A (ja) 2020-05-21
SG11201906657QA (en) 2019-08-27

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