KR102235211B1 - 비휘발성 메모리 장치 및 그것을 포함하는 저장 장치, 그것의 쓰기 방법 및 읽기 방법 - Google Patents

비휘발성 메모리 장치 및 그것을 포함하는 저장 장치, 그것의 쓰기 방법 및 읽기 방법 Download PDF

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KR102235211B1
KR102235211B1 KR1020140065176A KR20140065176A KR102235211B1 KR 102235211 B1 KR102235211 B1 KR 102235211B1 KR 1020140065176 A KR1020140065176 A KR 1020140065176A KR 20140065176 A KR20140065176 A KR 20140065176A KR 102235211 B1 KR102235211 B1 KR 102235211B1
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South Korea
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complementary
cells
line
word line
source line
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KR1020140065176A
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English (en)
Korean (ko)
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KR20150111803A (ko
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표석수
정현택
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삼성전자주식회사
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Priority to US14/593,171 priority Critical patent/US9431083B2/en
Priority to TW104102123A priority patent/TWI647697B/zh
Priority to JP2015056454A priority patent/JP6557488B2/ja
Priority to CN201510130134.XA priority patent/CN104952478B/zh
Publication of KR20150111803A publication Critical patent/KR20150111803A/ko
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Publication of KR102235211B1 publication Critical patent/KR102235211B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020140065176A 2014-03-25 2014-05-29 비휘발성 메모리 장치 및 그것을 포함하는 저장 장치, 그것의 쓰기 방법 및 읽기 방법 KR102235211B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/593,171 US9431083B2 (en) 2014-03-25 2015-01-09 Nonvolatile memory device and storage device having the same
TW104102123A TWI647697B (zh) 2014-03-25 2015-01-22 非依電性記憶體裝置及具有此記憶體裝置之儲存裝置
JP2015056454A JP6557488B2 (ja) 2014-03-25 2015-03-19 不揮発性メモリ装置及びそれを含む格納装置、それの書込み方法及び読出し方法
CN201510130134.XA CN104952478B (zh) 2014-03-25 2015-03-24 非易失性存储器和具有该非易失性存储器的存储装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461969911P 2014-03-25 2014-03-25
US61/969,911 2014-03-25

Publications (2)

Publication Number Publication Date
KR20150111803A KR20150111803A (ko) 2015-10-06
KR102235211B1 true KR102235211B1 (ko) 2021-04-05

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KR1020140065176A KR102235211B1 (ko) 2014-03-25 2014-05-29 비휘발성 메모리 장치 및 그것을 포함하는 저장 장치, 그것의 쓰기 방법 및 읽기 방법

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JP (1) JP6557488B2 (zh)
KR (1) KR102235211B1 (zh)
TW (1) TWI647697B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102517711B1 (ko) * 2016-06-30 2023-04-04 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186553A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性メモリセル及び不揮発性半導体記憶装置
JP2009064498A (ja) * 2007-09-05 2009-03-26 Renesas Technology Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4731041B2 (ja) * 2001-05-16 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4737886B2 (ja) * 2001-08-09 2011-08-03 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2006294179A (ja) * 2005-04-14 2006-10-26 Renesas Technology Corp 不揮発性記憶装置
US7995378B2 (en) * 2007-12-19 2011-08-09 Qualcomm Incorporated MRAM device with shared source line
US8144509B2 (en) * 2008-06-27 2012-03-27 Qualcomm Incorporated Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size
KR101057724B1 (ko) * 2009-05-13 2011-08-18 주식회사 하이닉스반도체 반도체 메모리 장치와 그의 구동 방법
US8432727B2 (en) * 2010-04-29 2013-04-30 Qualcomm Incorporated Invalid write prevention for STT-MRAM array
US8315079B2 (en) * 2010-10-07 2012-11-20 Crossbar, Inc. Circuit for concurrent read operation and method therefor
JP2014017042A (ja) * 2012-07-11 2014-01-30 Toppan Printing Co Ltd 不揮発性メモリセル、不揮発性メモリセルアレイおよび不揮発性メモリ
KR102116719B1 (ko) * 2013-12-24 2020-05-29 삼성전자 주식회사 자기 메모리 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186553A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性メモリセル及び不揮発性半導体記憶装置
JP2009064498A (ja) * 2007-09-05 2009-03-26 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
TW201543477A (zh) 2015-11-16
KR20150111803A (ko) 2015-10-06
JP6557488B2 (ja) 2019-08-07
TWI647697B (zh) 2019-01-11
JP2015185201A (ja) 2015-10-22

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