KR102108263B1 - Substrate processing system - Google Patents

Substrate processing system Download PDF

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Publication number
KR102108263B1
KR102108263B1 KR1020190115775A KR20190115775A KR102108263B1 KR 102108263 B1 KR102108263 B1 KR 102108263B1 KR 1020190115775 A KR1020190115775 A KR 1020190115775A KR 20190115775 A KR20190115775 A KR 20190115775A KR 102108263 B1 KR102108263 B1 KR 102108263B1
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KR
South Korea
Prior art keywords
stage
substrate
disposed
sub
substrates
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KR1020190115775A
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Korean (ko)
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KR20190112252A (en
Inventor
신동석
송봉섭
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삼성디스플레이 주식회사
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Priority to KR1020190115775A priority Critical patent/KR102108263B1/en
Publication of KR20190112252A publication Critical patent/KR20190112252A/en
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Publication of KR102108263B1 publication Critical patent/KR102108263B1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773Conveying cassettes, containers or carriers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

The substrate processing system includes a substrate loading unit for loading a plurality of substrates, a substrate transfer unit for simultaneously transferring N (N is a natural number greater than or equal to 2) substrates from the substrate loading unit, and the N substrates from the substrate transfer unit simultaneously And a substrate processing unit including a plurality of process chambers provided and processed, and each process chamber includes a stage on which the N substrates are seated and an insulating layer disposed between the N substrates.

Description

Substrate processing system {SUBSTRATE PROCESSING SYSTEM}

The present invention relates to a substrate processing system, and more particularly, to a substrate processing system capable of simultaneously processing a plurality of substrates.

Generally, a display device includes a display panel in which a plurality of elements are disposed. In manufacturing a display panel, a metal thin film and an inorganic layer for forming these elements are formed on a substrate.

A substrate processing system is used to form a metal thin film and an inorganic layer on the substrate of the display panel. The substrate processing system includes a cassette for receiving a substrate, a transfer device for transferring the substrate from the cassette, and a substrate processing device for receiving the substrate from the transfer device and performing a substrate processing process for forming a metal thin film and an inorganic layer.

The substrate processing apparatus includes process chambers that perform various processes to process a substrate. For example, the process chambers may include a sputtering chamber performing a sputtering process, a chemical vapor deposition chamber performing a chemical vapor deposition process, and the like.

The transfer apparatus transfers the substrates from the cassette one by one to the substrate processing apparatus. The substrate processing apparatus processes the provided substrates one by one.

An object of the present invention is to provide a substrate processing system capable of simultaneously processing a plurality of substrates.

A substrate processing system according to an embodiment of the present invention includes a substrate loading unit for loading a plurality of substrates, a substrate transfer unit for simultaneously transferring N (N is a natural number) substrates from the substrate loading unit, and the N substrates from the substrate transfer unit It includes a substrate processing unit including a plurality of process chambers that are provided and processed at the same time, each of the process chamber includes a stage on which the N substrates are seated and an insulating layer disposed between the N substrates.

The substrate loading unit includes a first region for loading a plurality of first substrates among the plurality of substrates into a plurality of layers and a second region for loading a plurality of second substrates among the plurality of substrates into a plurality of layers. Then, a pair of first and second substrates are spaced apart from each other on the same layer.

The substrate transfer unit simultaneously transfers the pair of first and second substrates from the substrate stack.

The substrate loading part, an upper frame having a frame shape, connected to one side of the upper frame in a first direction, has a frame shape, and a front frame vertically disposed with the upper frame, and the upper frame in the first direction A rear frame connected to the other side, having a frame shape, and vertically disposed with the upper frame, one side of the upper frame in a second direction intersecting the first direction, one side of the front frame, and one side of the rear frame A first side wall portion connected to the other side of the upper frame in the second direction, the other side of the front frame, and a second side wall portion connected to the other side of the rear frame, the lower portion of the front frame facing the upper frame , A lower portion of the rear frame, a lower portion of the first side wall portion, and a bottom portion connected to a lower portion of the second side wall portion, within the first side wall portion A plurality of first support bars arranged on a surface and extending in the second direction, and arranged at the first direction at predetermined intervals in a third direction intersecting the first and second directions, the first 2 is disposed on the inner surface of the side wall portion extending in the second direction, arranged at a predetermined distance in the third direction is arranged in the first direction, a plurality of arranged to correspond 1: 1 with the first support bars The second support bars are disposed at the center of the inner surface of the first side wall portion and the center of the inner side surface of the second side wall portion in the first direction, extending in the second direction, and spaced in the third direction. It includes a plurality of partition bars arranged.

In the first direction, the partition bars are disposed to overlap the first support bars and the second support bars, and the length of the partition bars in the second direction is shorter than the lengths of the first and second support bars.

The first and second support bars arranged on the left side of the partition bars in the first direction and the first and second support bars arranged on the right side of the partition bars in the first direction are arranged at equal intervals.

In the first region defined as an area between the partition bars and the front frame, the first substrates are disposed on the same layer defined as the same plane based on a plane parallel to the first direction and the second direction. The second substrates are disposed on the first and second support bars one by one, and in the second area defined as an area between the partition bars and the rear frame, the second substrates are on the first and second support bars arranged on the same layer. Are placed one by one.

The substrate transfer part is disposed on one side of the first support portion moved by the transfer wheels, the second support portion disposed on the first support portion and extending in the third direction, and the second support portion in the first direction. It includes a plurality of robot arms extending in the first direction and moved up and down.

The robot arms are disposed narrower than the distance between the first support bars and the second support bars, and the length of the robot arms in the first direction is greater than the length of the pair of first and second substrates combined. long.

The robot arms are inserted into any one of the first open area of the front frame or the second open area of the rear frame, and the pair of first and second substrates for transfer are seated and simultaneously transferred.

The substrate processing unit further includes a loading chamber receiving the pair of first and second substrates from the substrate transfer unit and a transfer chamber in which a transfer robot is disposed, and the process chambers include the transfer chamber. Connected to a chamber, the transfer robot provides the pair of first and second substrates from the loading chamber to the process chambers.

The stage further includes a first stage receiving a high frequency power supply and a second stage disposed on the first stage and receiving a DC power for electrostatic adsorption, and the pair of first and second substrates and The insulating layer is disposed on the second stage.

The stage further includes a cooling water supply pipe disposed through the interior of the first stage and through which cooling water flows.

The second stage includes a first sub-stage disposed on the first stage and a second sub-stage having a smaller size than the first sub-stage on a plane, and disposed on the first sub-stage, and The second sub-stage is disposed so as not to overlap a predetermined area of the boundary of the first sub-stage, and the pair of first and second substrates and the insulating layer are disposed on the second sub-stage.

The stage is disposed in the predetermined area of the boundary of the first sub-stage, and further includes a plurality of coupling pins coupling the first sub-stage and the first stage.

The second sub-stage is formed by being recessed from the top surface of the second sub-stage to a lower portion in a predetermined region of the center of the second sub-stage, and includes a trench extending in one direction, and the insulating layer is the Is placed in the trench.

According to an embodiment of the present invention, a plurality of substrates are transferred to a substrate processing unit by a substrate transfer unit, and a plurality of substrates are mounted on a stage in each process chamber of the substrate processing unit and can be simultaneously processed. Therefore, the substrate processing system according to the exemplary embodiment of the present invention can simultaneously process a plurality of substrates, thereby improving process efficiency during substrate processing.

1 is a block diagram schematically showing a substrate processing system according to an embodiment of the present invention.
FIG. 2 is a perspective view of the substrate loading unit shown in FIG. 1.
FIG. 3 is a top view of the substrate loading part as viewed from above when the substrate is loaded on the substrate loading part shown in FIG. 2.
FIG. 4 is a front view of the substrate loading unit as viewed from the front, with the substrate loaded on the substrate loading unit illustrated in FIG. 2.
5 is a perspective view of a substrate loading unit according to another embodiment of the present invention.
6 is a side view of the substrate transfer unit illustrated in FIG. 1.
7 is a top view of the substrate transfer unit illustrated in FIG. 1.
8A and 8B are diagrams for explaining operations in which substrates are transferred from the substrate stacking units illustrated in FIGS. 2 to 4.
9A to 9D are diagrams for explaining an operation in which substrates are transferred from the substrate loading unit illustrated in FIG. 5.
10 is a view showing the configuration of the substrate processing unit shown in FIG. 1.
11 is a schematic cross-sectional view of a stage disposed in each process chamber shown in FIG. 10.
12 is a top plan view of the stage shown in FIG. 11.
13 is a schematic cross-sectional view of a stage of a substrate processing system according to another embodiment of the present invention.
14 is a top plan view of the stage shown in FIG. 13.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments allow the disclosure of the present invention to be complete, and have ordinary knowledge in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

Elements or layers referred to as "on" or "on" of another device or layer are not only directly above the other device or layer, but also when intervening another layer or other device in the middle. All inclusive. On the other hand, when a device is referred to as “directly on” or “directly above”, it indicates that no other device or layer is interposed therebetween. “And / or” includes each and every combination of one or more of the items mentioned.

The spatially relative terms “below”, “beneath”, “lower”, “above”, “upper”, etc., are as shown in the figure. It can be used to easily describe the correlation of a device or components with other devices or components. The spatially relative terms should be understood as terms including different directions of the device in use or operation in addition to the directions shown in the drawings. The same reference numerals refer to the same components throughout the specification.

Although the first, second, etc. are used to describe various elements, components and / or sections, it goes without saying that these elements, components and / or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first component or first section mentioned below may be a second element, second component or second section within the technical spirit of the present invention.

Embodiments described herein will be described with reference to plan and cross-sectional views, which are ideal schematic views of the present invention. Therefore, the shape of the exemplary diagram may be modified by manufacturing technology and / or tolerance. Therefore, the embodiments of the present invention are not limited to the specific shapes shown, but also include changes in shapes generated according to the manufacturing process. Accordingly, the regions illustrated in the figures have schematic properties, and the shapes of the regions illustrated in the figures are intended to illustrate a particular form of region of the device, and are not intended to limit the scope of the invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram schematically showing a substrate processing system according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing system 400 of the present invention includes a substrate loading unit 100, a substrate transfer unit 200, and a substrate processing unit 300.

A plurality of substrates are loaded on the substrate loading unit 100. The substrate transfer unit 200 transfers the substrates from the substrate loading unit 100 in a predetermined number of units. For example, the substrate transfer unit 200 may simultaneously transfer N substrates among the substrates loaded on the substrate loading unit 100. N is a natural number greater than or equal to 2.

The substrate processing unit 300 simultaneously receives N substrates from the substrate transfer unit 200. The substrate processing unit 300 includes a plurality of process chambers. Each process chamber can simultaneously process N substrates provided from the substrate transfer unit 200. Therefore, the substrate processing system 400 of the present invention can improve process efficiency during substrate processing.

FIG. 2 is a perspective view of the substrate loading unit shown in FIG. 1.

Referring to FIG. 2, the substrate loading unit 100 includes an upper frame 110, a front frame 120, a rear frame 130, a first sidewall portion 140, a second sidewall portion 150, and a bottom portion ( 160), a plurality of first support bars 10, a plurality of second support bars 20, and a plurality of partition bars 30. The substrate loading unit 100 may be defined as a substrate loading cassette.

The upper frame 110 has a rectangular frame shape. The upper frame 110 is disposed parallel to the first direction D1 and the second direction D2 intersecting the first direction D1.

The front frame 120 has a rectangular frame shape and is connected to one side of the upper frame 110 in the first direction D1. The front frame 120 is disposed perpendicular to the upper frame 100 and extends in a third direction D3 intersecting the first direction D1 and the second direction D2.

The rear frame 130 has a rectangular frame shape and is connected to the other side of the upper frame 110 in the first direction D1. The rear frame 130 is disposed perpendicular to the upper frame 100 and extends in the third direction D3. The rear frame 130 is disposed to face the front frame 120.

The first side wall part 140 is connected to one side of the upper frame 110, one side of the front frame 120, and one side of the rear frame 130 in the second direction D2 crossing the first direction D1. do.

The second side wall part 150 is connected to the other side of the upper frame 110, the other side of the front frame 120, and the other side of the rear frame 130 in the second direction D2. The second sidewall portion 150 is disposed to face the first sidewall portion 140.

The bottom part 160 is disposed to face the upper frame 110. In the third direction D3, the bottom portion 160 is located at a lower portion of the front frame 120, a lower portion of the rear frame 130, a lower portion of the first side wall portion 140, and a lower portion of the second side wall portion 150. Connected.

The first support bars 10 are disposed on the inner surface of the first side wall portion 140 and extend in the second direction D2. The first support bars 10 are arranged at a predetermined distance in the third direction D3 and are arranged in the first direction D1.

The second support bars 20 are disposed on the inner surface of the second side wall portion 150 and extend in the second direction D2. The second support bars 20 are arranged at a predetermined distance in the third direction D3 and are arranged in the first direction D1. The second support bars 20 are arranged to be symmetric in a 1: 1 correspondence with the first support bars 10.

The partition bars 30 are disposed in the central portion of the inner surface of the first side wall portion 140 and the inner side of the second side wall portion 150 in the first direction D1 and extend in the second direction D2. . The partition bars 30 are arranged at predetermined intervals in the third direction D3, and may be arranged in one row.

In the first direction D1, the partition bars 30 are arranged to overlap with the first support bars 10 and the second support bars 20. In the second direction D2, the lengths of the partition bars 30 are shorter than the lengths of the first and second support bars 10 and 20.

In the first direction D1, the first support bars 10 disposed on the left side of the partition bars 30 and the first support bars 10 disposed on the right side of the partition bars 30 are in the first direction D1. They can be arranged evenly spaced. In the first direction D1, the second support bars 20 disposed on the left side of the partition bars 30 and the second support bars 20 disposed on the right side of the partition bars 30 are in the first direction D1. They can be arranged evenly spaced.

Hereinafter, the open area of the square frame shape of the front frame 120 is referred to as the first open portion OP1, and the open area of the square frame shape of the rear frame 130 is referred to as the second open portion OP2. The regions of the first and second support bars 10 and 20 disposed on the same plane with respect to the plane parallel to the first direction D1 and the second direction D2 are defined as the same layer.

FIG. 3 is a top view of the substrate loading part as viewed from the top when the substrate is loaded on the substrate loading part shown in FIG. 2. FIG. 4 is a front view of the substrate loading unit as viewed from the front, with the substrate loaded on the substrate loading unit illustrated in FIG. 2.

Referring to FIGS. 3 and 4, a plurality of substrates SUB1 and SUB2 are stacked on the substrate stacking unit 100 in a plurality of layers. Hereinafter, an area between the partition bars 30 and the front frame 120 in the substrate loading unit 100 is defined as a first area A1, and an area between the partition bars 30 and the rear frame 130 is second. It is defined as the area A2.

The substrates SUB1 and SUB2 are disposed in a plurality of first substrates SUB1 disposed in the first area A1 of the substrate loading part 100 and in a second area A2 of the substrate loading part 100. It includes a plurality of second substrates (SUB2). The first substrates SUB1 are stacked in a plurality of layers in the first region A1, and the second substrates SUB2 are stacked in a plurality of layers in the second region A2.

In the first region A1, the first substrates SUB1 are disposed one on the first support bars 10 and the second support bars 20 disposed on the same layer. For example, a predetermined area on one side of each first substrate SUB1 in the second direction D2 is disposed on the first support bars 10 disposed on the same layer, and each first substrate SUB1 ), A predetermined area on the other side is disposed on the second support bars 20 disposed on the same layer.

In the second region A2, the second substrates SUB2 are disposed one on the first support bars 10 and the second support bars 20 disposed on the same layer. In the first direction D1, the first substrates SUB1 and the second substrates SUB2 are disposed with the partition bars 30 interposed therebetween. Accordingly, a pair of first and second substrates SUB1 and SUB2 are disposed on the same layer with the partition bars 30 interposed therebetween. The first and second substrates SUB1 and SUB2 may be exposed to the outside by the first open portion OP1 and the second open portion OP2.

5 is a perspective view of a substrate loading unit according to another embodiment of the present invention.

Referring to FIG. 5, the substrate loading part 100_1 includes an upper frame 110_1, a front frame 120_1, a rear frame 130_1, a first side wall part 140_1, a second side wall part 150_1, and a bottom part ( 160_1), a plurality of first support bars 10_1, and a plurality of second support bars 20_1.

Substantially, except that the length of the substrate loading portion 100 shown in FIG. 2 is reduced in half in the first direction D1, and the partition bars 30 are not used, the substrate loading portion shown in FIG. 5 ( 100_1) has the same configuration as the substrate loading unit 100 shown in FIG. 2.

That is, the upper frame 110_1, the first side wall part 140_1, the second side wall part 150_1, and the bottom part 160_1 are the upper frame 110 and the first side wall part 140 in the first direction D1. ), The length of the second side wall portion 150 and the bottom portion 160 is halved. Therefore, hereinafter, description of the detailed configuration of the substrate loading unit 100_1 illustrated in FIG. 5 is omitted.

The substrates are disposed on the substrate stacking unit 100_1 in a plurality of layers, and one substrate is disposed on the first and second support bars 10 and 20 disposed on the same layer. The substrate may be the first substrate SUB1 or the second substrate SUB2. The substrate loading unit illustrated in FIG. 2 may load two substrates for each layer, but the substrate loading unit 100_1 illustrated in FIG. 5 may load one substrate for each layer.

6 is a side view of the substrate transfer unit illustrated in FIG. 1. 7 is a top view of the substrate transfer unit illustrated in FIG. 1.

6 and 7, the substrate transfer part 200 includes a first support part 210, a second support part 220, a plurality of robot arms 230, and transport wheels 50. The substrate transfer unit 200 may be defined as a substrate transfer robot. The second support part 220 is disposed on the first support part 210 and extends from the third direction D3 to the upper direction.

The robot arms 230 are disposed on one side of the second support 220 in the first direction D1 and extend in the first direction D1 perpendicular to the second support 220. The robot arms 230 may be moved up and down on one side of the second support 220. The robot arms 230 may be disposed at equal intervals in the second direction D2. Exemplarily, three robot arms 231, 232, and 233 are shown in FIG. 7, but the number of robot arms is not limited thereto.

The transport wheels 50 are disposed under the first support 210 to move the first support 210 in a predetermined direction. Accordingly, the substrate transfer unit 200 may be moved in a predetermined direction by the transfer wheels 50.

8A and 8B are diagrams for explaining an operation in which the substrate is transferred from the substrate loading unit illustrated in FIGS. 2 to 4.

For convenience of description, the first and second support bars 10 and 20 disposed above the first and second substrates SUB1 and SUB2 are not illustrated in FIGS. 8A and 8B.

8A and 8B, the substrate transfer part 200 moves to the substrate loading part 100. The robot arms 230 of the substrate transfer unit 200 may be disposed to move up and down, so as to overlap with a layer on which a pair of first and second substrates SUB1 and SUB2 are disposed.

The robot arms 230 are moved to be inserted into the first open portion OP1, and are disposed to overlap with a pair of first and second substrates SUB1 and SUB2 for transfer. However, the present invention is not limited thereto, and the robot arms 230 may be disposed to overlap with a pair of first and second substrates SUB1 and SUB2 for moving and being inserted into and transferred to the second open part OP2. .

In the second direction D2, the robot arms 230 are disposed narrower than the width of the first open area OP1, and are narrower than the gap between the first support bars 10 and the second support bars 20. Therefore, even if the robot arms 230 are inserted into the first open part OP1, they do not collide with the first support bars 10 and the second support bars 20.

The robot arms 230 are disposed under the pair of first and second substrates SUB1 and SUB2 for transferring. The robot arms 230 are moved upward by a predetermined distance, and a pair of first and second substrates SUB1 and SUB2 disposed on the same layer are seated on the robot arms 230.

The length of the robot arms 230 in the first direction D1 is longer than the sum of the lengths of the first and second substrates SUB1 and SUB2. Accordingly, a pair of first and second substrates SUB1 and SUB2 may be seated on the robot arms 230 at a time.

The substrate transfer unit 200 moves the robot arms 230 on which a pair of first and second substrates SUB1 and SUB2 are seated outside the substrate loading unit 100. The substrate transfer unit 200 transfers the pair of first and second substrates SUB1 and SUB2 seated on the robot arms 230 to the substrate processing unit 300. Accordingly, two substrates may be simultaneously transferred by the substrate transfer unit 200.

As an exemplary embodiment, a substrate loading unit 100 for loading two substrates on the same layer and a substrate transportation unit 200 for simultaneously transferring two substrates have been described. However, the present invention is not limited thereto, and more than two substrates are stacked on the same layer of the substrate stacker 100, and the substrate transfer unit 200 may simultaneously transport more than two substrates.

For example, when the substrate loading unit 100 illustrated in FIG. 2 further extends in the first direction D1, more than two substrates may be disposed on the same layer. In addition, when the robot arms 230 illustrated in FIGS. 6 and 7 are further extended in the first direction D1, more than two substrates may be simultaneously moved by the robot arms 230. Therefore, in the embodiment of the present invention, N substrates can be simultaneously transferred.

9A to 9D are views for explaining an operation in which the substrate is transferred from the substrate loading unit shown in FIG. 5.

For convenience of description, the first and second support bars 10 and 20 disposed above the first and second substrates SUB1 and SUB2 are not illustrated in FIGS. 9A to 9D.

9A and 9B, the robot arms 230 of the substrate transfer unit 200 may be disposed to move up and down and overlap with a layer on which the first substrate SUB1 for transfer is disposed.

The robot arms 230 are inserted into the first open portion OP1 and disposed under the first substrate SUB1 for transfer. A predetermined area of the robot arms 230 adjacent to the second support 220 is disposed to overlap with the first substrate SUB1 for transfer.

 The robot arms 230 are moved in the upper direction by a predetermined distance, and the first substrate SUB1 is seated in a predetermined area of the robot arms 230 adjacent to the second support 220. The substrate transfer unit 200 moves the robot arms 230 on which the first substrate SUB1 is seated outside the substrate loading unit 100.

9C and 9D, the robot arms 230 of the substrate transfer unit 200 may be disposed to move up and down, so that the second substrate SUB2 for transferring is overlapped with the layer on which it is disposed. The second substrate SUB2 is disposed on a different layer from the first substrate SUB1.

The robot arms 230 are inserted into the first open portion OP1 and are disposed under the second substrate SUB2 for transferring. A predetermined area of the adjacent robot arms 230 is disposed at the end of the robot arms 230 so as to overlap with the second substrate SUB1 for transferring. The region of the robot arms 230 on which the first substrate SUB1 is seated is not inserted into the substrate loading part 200.

The robot arms 230 are moved in the upper direction by a predetermined distance, and the second substrate SUB2 is seated in a predetermined area of the adjacent robot arms 230 at the end of the robot arms 230. The substrate transfer part 200 moves the robot arms 230 on which the second substrate SUB2 is seated outside the substrate loading part 100. The substrate transfer unit 200 transfers a pair of first and second substrates SUB1 and SUB2 seated on the robot arms 230 to the substrate processing unit 300.

The substrate transfer unit 200 may reciprocate twice to the substrate loading unit 100, and load two substrates SUB1 and SUB2 on the robot arms 230. Accordingly, the two substrates SUB1 and SUB2 may be simultaneously transferred to the substrate processing unit 300 by the substrate transfer unit 200.

As an exemplary embodiment, a substrate transfer unit 200 for simultaneously transferring two substrates has been described. However, the present invention is not limited thereto, and the robot arms 230 illustrated in FIGS. 6 and 7 are further extended in the first direction D1, and the substrate transfer unit 200 reciprocates more than twice to the substrate loading unit 100 When moving, the substrate transfer unit 200 may simultaneously transfer more than two substrates.

10 is a view showing the configuration of the substrate processing unit shown in FIG. 1.

Referring to FIG. 10, the substrate processing unit 300 includes a loading chamber 310, a transfer chamber 320, a plurality of process chambers 330 to 370, and a transfer robot 60. The substrate processing unit 300 illustrated in FIG. 10 may be defined as a cluster type substrate processing apparatus.

The loading chamber 310 and the process chambers 330 are connected to the side of the transfer chamber 320 having a polygonal shape. For example, the transfer chamber 320 has a hexagonal shape, and the loading chamber 310 and the five process chambers 330 are respectively disposed on the side of the transfer chamber 320.

The transfer robot 60 is disposed in the transfer chamber 320. The transfer robot 60 includes a rotating shaft 61, a first robot arm 62, a second robot arm 63, a third robot arm 64, and a plurality of fourth robot arms 65. One side of the first robot arm 62 is connected to the rotating shaft 61, and the other side of the first robot arm 62 is connected to one side of the second robot arm 63. The first robot arm 62 may be rotated with the rotating shaft 61 as a central axis.

The other side of the second robot arm 63 is connected to one side of the third robot arm 64, and the second robot arm 63 can be rotated about the other side of the first robot arm 62 as a central axis. The other side of the third robot arm 64 is connected to one side of the fourth robot arms 65, and the third robot arm 64 can be rotated about the other side of the second robot arm 63 as a central axis. The second robot arm 63 has a length capable of seating two substrates.

The substrate transfer unit 200 provides the first substrate SUB1 and the second substrate SUB2 to the loading chamber 310. After the loading chamber 310 is provided with the first substrate SUB1 and the second substrate SUB2, the interior of the loading chamber 310 is switched to a vacuum state.

The transport robot 60 rotates at various angles to provide the first substrate SUB1 and the second substrate SUB2 introduced into the loading chamber 310 to the process chambers 330 to 370. The process chambers 330 to 370 may simultaneously process the first substrate SUB1 and the second substrate SUB2.

For example, the first substrate SUB1 and the second substrate SUB2 introduced into the loading chamber 310 may be seated on the fourth robot arms 65 of the transport robot 60. The first substrate SUB1 and the second substrate SUB2 seated on the fourth robot arms 65 are provided to the first process chamber 330 according to the movement of the transport robot 60 and can be simultaneously processed.

The first substrate SUB1 and the second substrate SUB2 processed in the first process chamber 330 are seated on the fourth robot arms 65 again, and according to the movement of the transport robot 60, the second process chamber ( 340) and can be processed simultaneously. This operation is repeated so that the first substrate SUB1 and the second substrate SUB2 may be processed in the first to fifth process chambers 330 to 370.

Although not illustrated, a gate may be disposed at a boundary between the transfer chamber 320 and the loading chamber 310 and a boundary between the transfer chamber 320 and the process chambers 330-370. When the first substrate SUB1 and the second substrate SUB2 are transferred according to the movement of the transfer robot 60, the gate is opened so that the first substrate SUB1 and the second substrate SUB2 are processed in each process chamber 330 ~ 370).

The process chambers 330 to 370 perform various processes to form metal thin films and inorganic layers on the first substrate SUB1 and the second substrate SUB2, such that the first substrate SUB1 and the second substrate SUB2 are formed. ) At the same time. For example, the process chambers 330 to 370 may include a sputtering chamber performing a sputtering process, a chemical vapor deposition chamber performing a chemical vapor deposition process, and the like.

11 is a schematic cross-sectional view of a stage disposed in each process chamber shown in FIG. 10. 12 is a top plan view of the stage shown in FIG. 11.

11 and 12, each process chamber 330 to 370 includes a stage 70 on which a first substrate SUB1 and a second substrate SUB2 are seated, and a first substrate SUB1 and a second substrate It includes an insulating layer (ISL) disposed between (SUB2). After the first substrate SUB1 and the second substrate SUB2 are seated on the stage 70, a substrate processing process for the first substrate SUB1 and the second substrate SUB2 is performed.

The stage 70 includes a first stage 71, a second stage 72 disposed on the first stage 71, and a plurality of coupling pins securing the second stage 72 to the first stage 71 (73).

The first stage 71 is provided with a high-frequency power source (RF) for drawing ions from the plasma to the first substrate SUB1 and the second substrate SUB2. The first stage 71 is heated by the high-frequency power source RF to increase the temperature of the first stage 71.

A cooling water supply pipe 74 is disposed under the first stage 71. The cooling water supply pipe 74 is disposed via the interior of the first stage 72. Cooling water CL is supplied to the cooling water supply pipe 74 through one side of the cooling water supply pipe 74. The cooling water CL is discharged through the other side of the cooling water supply pipe 74 after passing through the interior of the first stage 71 through the cooling water supply pipe 74. The cooling water CL provided inside the first stage 71 serves to cool the first stage 71 heated by the radio frequency power RF.

The second stage 72 is provided with a DC power supply DC for electrostatic adsorption, and the upper surface of the second stage 72 provided with the DC power supply DC is charged with positive polarity (+). Since the upper surfaces of the second stage 72 are charged with a positive polarity (+), the upper surfaces of the first substrate SUB1 and the second substrate SUB2 are charged with negative polarities (-) having opposite polarities. The first substrate SUB1 and the second substrate SUB2 are adsorbed and fixed on the second stage 72 by positive and negative polarities (+) and negative polarities (−). Therefore, the first substrate SUB1 and the second substrate SUB2 may be mounted on the second stage 72.

When the temperature of the first stage 71 increases, the temperature of the second stage 72 may also increase. However, since the temperature of the first stage 71 is lowered by the cooling water CL, the temperature of the second stage 72 disposed on the first stage 71 may also be lowered.

The second stage 72 includes a first sub-stage 72_1 disposed on the first stage 71 and a second sub-stage 72_2 disposed on the first sub-stage 72_1. The first substrate SUB1 and the second substrate SUB2 are mounted on the second sub-stage 72_2.

The size of the second sub-stage 72_2 on the plane is smaller than the first sub-stage 72_1, and the second sub-stage 72_2 is disposed so as not to overlap with a predetermined area of the boundary of the first sub-stage 72_1. .

The coupling pins 73 are disposed in a predetermined area of the boundary of the first sub-stage 72_1. The coupling pins 73 penetrate the first sub-stage 72_1 downward in a predetermined area of the boundary of the first sub-stage 72_1 and are inserted into the grooves G of the first stage 71. Thus, the second stage 72 is coupled to the first stage 71 by coupling pins 73.

The second sub-stage 72_2 includes a trench T disposed in a predetermined area in the center of the second sub-stage 72_2 and extending in one direction. The trench T is formed by being recessed downward from the top surface of the second sub-stage 72_2 in a predetermined area in the center of the second sub-stage 72_2. The first substrate SUB1 and the second substrate SUB2 are mounted on the second sub-stage 72_2 with the trench T interposed therebetween.

The insulating layer ISL includes an insulating material and is disposed in the trench T. Therefore, the first substrate SUB1 and the second substrate SUB2 are mounted on the second sub-stage 72_2 with the insulating layer ISL interposed therebetween.

When the insulating layer ISL is not disposed on the second stage 72, a phenomenon in which plasma is focused between the first substrate SUB1 and the second substrate SUB2 may occur. In this case, an arc may occur between the first substrate SUB1 and the second substrate SUB2, and the first substrate SUB1 and the second substrate SUB2 may be damaged.

However, in the exemplary embodiment of the present invention, the trench T is disposed in the second sub-stage 72_2, and the insulating layer ISL is disposed in the trench T. An arc may not be generated between the first substrate SUB1 and the second substrate SUB2 by the insulating layer ISL formed of an insulating material. Accordingly, damage to the first substrate SUB1 and the second substrate SUB2 due to the arc can be prevented.

With this configuration, after the first substrate SUB1 and the second substrate SUB2 are seated on the stage 70 of each process chamber 330 to 370, the first substrate SUB1 and the second substrate SUB2 are The substrate processing process is performed simultaneously.

Exemplarily, the configuration of the stage 70 on which two substrates are mounted has been described, but is not limited thereto, and more than two substrates may be mounted on the stage. For example, the stage 70 illustrated in FIGS. 11 and 12 is further extended left and right, and a plurality of trenches T and insulating layers ISL illustrated in FIGS. 11 and 12 are provided to extend the stage 70 ). In this case, more than two substrates may be placed on the stage with each insulating layer ISL interposed therebetween, and a substrate processing process for more than two substrates may be simultaneously performed.

In an embodiment of the present invention, two or more N substrates are simultaneously transferred to the substrate processing unit 300 by the substrate transfer unit 200, and N substrates are transferred from each process chamber 330 to 370 of the substrate processing unit 300. It can be seated on the stage 70 and processed simultaneously. Therefore, the substrate processing system 400 according to an embodiment of the present invention can simultaneously process N substrates, thereby improving process efficiency during substrate processing.

13 is a schematic cross-sectional view of a stage of a substrate processing system according to another embodiment of the present invention. 14 is a top plan view of the stage shown in FIG. 13.

For convenience of description, the first substrate SUB1 and the second substrate SUB2 are not illustrated in FIG. 14. The stage 90 illustrated in FIGS. 13 and 14 excludes the first and second grooves G1 and G2 and the first and second protrusions P1 and P2 disposed in the second sub-stage 92_2. , Has the same configuration as the stage 90 shown in FIG. 11. Therefore, hereinafter, a configuration different from the stage 90 shown in FIG. 11 will be described.

13 and 14, a stage 90 and an insulating layer ISL are disposed in each process chamber 330 to 370. The stage 90 includes a first stage 91, a second stage 92, and a plurality of coupling pins 93. The second stage 92 includes a first sub-stage 92_1 and a second sub-stage 92_2. The second sub-stage 92_2 includes a first groove G1, a second groove G1, first protrusions P1, and a plurality of second protrusions P2.

The first groove G1 is formed by being recessed downward from the top surface of the second sub-stage 92_2 in a predetermined region of the second sub-stage 92_2 on the left side of the trench T. The second groove G2 is formed by being recessed downward from the top surface of the second sub-stage 92_2 in a predetermined region of the second sub-stage 92_2 on the right side of the trench T.

The first protrusions P1 are disposed in the first groove G1 and protrude upward. The second protrusions P2 are disposed in the second groove G2 and protrude upward. The first and second protrusions P1 and P2 have a convex shape in the upper direction.

A predetermined area of the boundary of the first substrate SUB1 is disposed to contact the upper surface of the second sub-stage 92_2 adjacent to the first groove G1 in the second sub-stage 92_2 on the left side of the trench T. . A predetermined area of the boundary of the second substrate SUB2 is arranged to contact the upper surface of the second sub-stage 92_2 adjacent to the second groove G2 in the second sub-stage 92_2 on the right side of the trench T. .

The first and second protrusions P1 and P2 are disposed lower than the upper surface of the second sub-stage 92_2. Therefore, the first and second protrusions P1 and P2 do not contact the first substrate SUB1 and the second substrate SUB2.

After the first substrate SUB1 and the second substrate SUB2 are seated on the stage 90, a substrate processing process for the first substrate SUB1 and the second substrate SUB2 is simultaneously performed. Therefore, the substrate processing system according to another embodiment of the present invention can improve process efficiency during substrate processing.

Although described with reference to the above embodiments, those skilled in the art understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. Will be able to. In addition, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, and all technical spirit within the scope of the following claims and equivalents thereof should be interpreted as being included in the scope of the present invention. .

100: substrate processing unit 200: substrate transfer unit
300: substrate processing unit 400: substrate processing system
110: upper frame 120: front frame
130: rear frame 140: the first side wall portion
150: second side wall portion 160: bottom portion
10: first support bars 20: second support bars
30: compartment bars 210: first support
220: second support 230: robot arms
50: transport wheels 310: loading chamber
320: transfer chamber 330 ~ 370: process chambers
60: transfer robot 70: stage
71: first stage 72: second stage
ISL: insulating layer 73: coupling pins
72_1: first sub-stage 72_2: second sub-stage

Claims (26)

  1. It includes a plurality of process chambers for receiving and processing the first display panel manufacturing substrate and the second display panel manufacturing substrate at the same time,
    Each of the plurality of process chambers,
    A stage for providing a processing region on which the substrate for manufacturing the first display panel and the substrate for manufacturing the second display panel are seated; And
    And a trench for dividing the one processing region into first and second regions where the first display panel manufacturing substrate and the second display panel manufacturing substrate are respectively disposed,
    The trench extends in a first direction from a predetermined area in the center of the stage,
    The length of the first direction of the trench on a plane is greater than the width of the second direction orthogonal to the first direction.
  2. According to claim 1,
    The stage,
    A first stage; And
    And a second stage disposed on the first stage,
    The trench is formed in a thickness direction of the second stage from the top surface of the second stage.
  3. According to claim 2,
    The second stage,
    A first sub-stage disposed on the first stage; And
    A second sub-stage having a size smaller than the first sub-stage in a plane, and disposed on the first sub-stage,
    The trench is formed in the thickness direction of the second sub-stage from the top surface of the second sub-stage, the substrate processing system.
  4. According to claim 3,
    The first sub-stage and the second sub-stage have a substrate processing system having an integral shape.
  5. According to claim 3,
    The second sub-stage,
    A first groove recessed from the upper surface of the second sub-stage to a lower portion and corresponding to the substrate for manufacturing the first display panel;
    A second groove recessed from the upper surface of the second sub-stage to a lower portion and corresponding to the substrate for manufacturing the second display panel;
    A plurality of first protrusions disposed in the first groove and having a convex shape; And
    And a plurality of second protrusions disposed in the second groove and having a convex shape.
  6. The method of claim 5,
    The first protrusions do not contact the substrate for manufacturing the first display panel, and the second protrusions do not contact the substrate for manufacturing the second display panel.
  7. According to claim 2,
    And a cooling water supply pipe disposed in the first stage.
  8. According to claim 2,
    The second stage is a substrate processing system that receives a DC power.
  9. The method of claim 8,
    The upper surface of the second stage is a positively charged substrate processing system.
  10. According to claim 2,
    The first stage is a substrate processing system that receives a high-frequency power source.
  11. According to claim 2,
    And a coupling pin coupling the first stage to the second stage.
  12. According to claim 1,
    The plurality of process chambers comprises a sputtering chamber substrate processing system.
  13. And a sputtering chamber for receiving and processing the substrate for manufacturing the first display panel and the substrate for manufacturing the second display panel at the same time,
    The sputtering chamber,
    A first stage;
    A second stage disposed on the first stage and providing one processing region in which the first display panel manufacturing substrate and the second display panel manufacturing substrate are seated; And
    The one processing region is divided into a first region and a second region in which the substrate for manufacturing the first display panel and the substrate for manufacturing the second display panel are respectively disposed, and a thickness direction of the second stage from an upper surface of the second stage It includes a trench formed of,
    The trench extends in a first direction from a predetermined area in the center of the second stage,
    The length of the first direction of the trench on a plane is greater than the width of the second direction orthogonal to the first direction.
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KR1020190115775A 2019-09-20 2019-09-20 Substrate processing system KR102108263B1 (en)

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US20040069225A1 (en) * 1996-11-18 2004-04-15 Applied Materials, Inc. Tandem process chamber
JP2012186489A (en) 2012-05-02 2012-09-27 Tokyo Electron Ltd Substrate placement board and substrate processing apparatus
JP2012222087A (en) * 2011-04-06 2012-11-12 Chugai Ro Co Ltd Device for transporting substrate and apparatus for processing substrate provided with the same
JP2014049667A (en) * 2012-09-03 2014-03-17 Tokyo Electron Ltd Plasma processing apparatus, and substrate processing apparatus provided with the same

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JPH08244909A (en) * 1995-03-14 1996-09-24 Hitachi Electron Eng Co Ltd Aligning glass substrate within cassette
KR20090124118A (en) * 2008-05-29 2009-12-03 주식회사 뉴파워 프라즈마 Substrate processing system
US20130057837A1 (en) * 2011-04-06 2013-03-07 Nikon Corporation Exposure apparatus, exposure method, device-manufacturing method, program, and recording medium
JP6100564B2 (en) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 Substrate processing apparatus and mounting table

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040069225A1 (en) * 1996-11-18 2004-04-15 Applied Materials, Inc. Tandem process chamber
JP2012222087A (en) * 2011-04-06 2012-11-12 Chugai Ro Co Ltd Device for transporting substrate and apparatus for processing substrate provided with the same
JP2012186489A (en) 2012-05-02 2012-09-27 Tokyo Electron Ltd Substrate placement board and substrate processing apparatus
JP2014049667A (en) * 2012-09-03 2014-03-17 Tokyo Electron Ltd Plasma processing apparatus, and substrate processing apparatus provided with the same

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