KR102051343B1 - 네거티브형 감활성광선성 또는 감방사선성 수지 조성물, 네거티브형 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 - Google Patents

네거티브형 감활성광선성 또는 감방사선성 수지 조성물, 네거티브형 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 Download PDF

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KR102051343B1
KR102051343B1 KR1020177027179A KR20177027179A KR102051343B1 KR 102051343 B1 KR102051343 B1 KR 102051343B1 KR 1020177027179 A KR1020177027179 A KR 1020177027179A KR 20177027179 A KR20177027179 A KR 20177027179A KR 102051343 B1 KR102051343 B1 KR 102051343B1
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South Korea
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sensitive
radiation
preferable
general formula
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KR1020177027179A
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Korean (ko)
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KR20170125358A (ko
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아키히로 카네코
슈헤이 야마구치
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020177027179A 2015-04-07 2016-03-04 네거티브형 감활성광선성 또는 감방사선성 수지 조성물, 네거티브형 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 KR102051343B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015078738 2015-04-07
JPJP-P-2015-078738 2015-04-07
PCT/JP2016/056856 WO2016163187A1 (ja) 2015-04-07 2016-03-04 ネガ型感活性光線性又は感放射線性樹脂組成物、ネガ型感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20170125358A KR20170125358A (ko) 2017-11-14
KR102051343B1 true KR102051343B1 (ko) 2019-12-03

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KR1020177027179A KR102051343B1 (ko) 2015-04-07 2016-03-04 네거티브형 감활성광선성 또는 감방사선성 수지 조성물, 네거티브형 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법

Country Status (4)

Country Link
JP (1) JP6402245B2 (ja)
KR (1) KR102051343B1 (ja)
TW (1) TWI697732B (ja)
WO (1) WO2016163187A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6459989B2 (ja) * 2016-01-20 2019-01-30 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6929070B2 (ja) * 2017-01-25 2021-09-01 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JPWO2020174767A1 (ja) * 2019-02-28 2021-11-11 富士フイルム株式会社 パターンつき基板の製造方法、回路基板の製造方法、タッチパネルの製造方法、及び積層体
JP7334687B2 (ja) * 2019-08-14 2023-08-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
TW202128970A (zh) * 2019-08-29 2021-08-01 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法及電子裝置之製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170165A (ja) 1988-12-23 1990-06-29 Hitachi Ltd 放射線感応性組成物及びそれを用いたパターン形成法
JP3798531B2 (ja) * 1997-09-26 2006-07-19 富士写真フイルム株式会社 ネガ型画像記録材料
JP4276773B2 (ja) 2000-09-25 2009-06-10 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
JP2008250227A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4973876B2 (ja) * 2007-08-22 2012-07-11 信越化学工業株式会社 パターン形成方法及びこれに用いるパターン表面コート材
JP5205485B2 (ja) * 2011-02-21 2013-06-05 富士フイルム株式会社 レジスト膜、該レジスト膜を用いたレジスト塗布マスクブランクス及びレジストパターン形成方法、並びに、化学増幅型レジスト組成物
JP5856991B2 (ja) * 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
JP5919122B2 (ja) * 2012-07-27 2016-05-18 富士フイルム株式会社 樹脂組成物及びそれを用いたパターン形成方法
JP6127832B2 (ja) * 2012-09-05 2017-05-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP2015031850A (ja) * 2013-08-02 2015-02-16 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスク及びパターン形成方法、並びに、電子デバイスの製造方法及び電子デバイス
JP6122754B2 (ja) * 2013-09-30 2017-04-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法

Also Published As

Publication number Publication date
JP6402245B2 (ja) 2018-10-10
TWI697732B (zh) 2020-07-01
JPWO2016163187A1 (ja) 2018-02-01
TW201636732A (zh) 2016-10-16
WO2016163187A1 (ja) 2016-10-13
KR20170125358A (ko) 2017-11-14

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