KR101998774B1 - Line Type Electron Beam Emission Device - Google Patents

Abstract

The present invention relates to an electron beam emitting apparatus in the form of a line, and more particularly, to an electron beam emitting apparatus in the form of a line, in which electrons emitted from a plasma in a hole formed in a hollow cathode and secondary electrons emitted by ion collision on a cold cathode To a technique for emitting electron beams in the form of a line having a high electron density to an object using a cathode that emits light.
A line-shaped electron beam emitting apparatus according to the present invention is provided on an upper side of a chamber and has a curved lower surface formed in an upward curved shape so as to penetrate a plurality of gas holes A cathode for forming a plasma by ionizing the process gas in the gas hole and a plurality of holes formed on the curved surface corresponding to the cathode while being disposed on the lower side of the cathode, And an anode which is configured to have a radius of curvature smaller than a radius of curvature and emits electrons generated by the cathode downward, the cathode being formed by gas ionization and plasma generated in the gas hole as the first negative voltage is applied Electrons are emitted to the lower side of the gas hole, and the anode is electrically connected to the cathode side Electrons traveling toward the anode side ionize the gas in the vicinity of the anode to form ions and accelerate to the cathode surface by the first negative voltage of the cathode to collide with each other to generate secondary electrons, And the secondary electrons due to the cathode surface collision are collectively focused at the focal point of the anode through holes formed in the anode, and the voltage applied to the anode is supplied in a pulse form in which a positive voltage and a negative voltage alternate , And a negative voltage is formed in a pulse shape having a wider width than a positive voltage.

Description

[0001] The present invention relates to a line type electron beam emission device,

The present invention relates to an electron beam emitting apparatus in the form of a line, and more particularly, to an electron beam emitting apparatus in the form of a line, in which electrons emitted from a plasma in a hole formed in a hollow cathode and secondary electrons emitted by ion collision on a cold cathode To a technique for emitting electron beams in the form of a line having a high electron density to an object using a cathode that emits light.

The electron beam emitting apparatus emits electrons by using high energy to melt or modify the surface of the workpiece. The electron beam focused on the electrons in the space is emitted by an RF oscillator and an amplifier, a display, an accelerator, an electron microscope, Sensors, various process equipment, and so on.

The electron beam machining technology that applies such an electron beam emitting device and processes it in the nano unit is based on the electron scanning microscope developed before and after the 1960s, and it is a technique to make a nano-sized pattern using the energy of electrons. And the object resist is processed (exposed) in such a manner that it is scanned by deflecting it precisely.

Since the electron beam processing technique irradiates the nano-sized focusing beam one by one according to a desired pattern, it is widely used for mask fabrication for semiconductor manufacturing, MEMS device fabrication, and nano-sized stamp fabrication.

Conventionally, when a spin-on glass (glass) film, a polyimide film, or the like is manufactured using an electron beam machining technique, the electron beam emitting apparatus places the thin film on a substrate support and irradiates an electron beam The upper and lower portions of the thin film are uniformly cured.

Particularly, applications for collimating electrons in a line beam shape include a deposition and etching process using plasma generation by a polymide and an electron beam on a flexible substrate.

However, in order to focus electrons at a predetermined position, that is, a process position, various complex devices must be provided, which makes it difficult to efficiently conduct electron focusing.

Further, the conventional electron beam emitting apparatus generally has a structure that emits secondary electrons generated on a cold cathode, which has a simple structure. On the other hand, a low emission efficiency and a working pressure range according to the cathode material are narrow, There is a problem that the emission efficiency is lowered due to contamination of the anode and the anode.

In addition, a conventional electron beam emitting apparatus requires a complicated structure for focusing electrons generated from the cathode, or secures a distance of a certain length or more from the cathode, which increases the overall size of the apparatus.

Korean Patent Laid-Open Publication No. 2016-0132269 entitled " Korean Patent No. 089563 "Electron Beam Releasing Device"

The present invention provides a method of forming a hole in a hollow cathode so as to emit an electron beam having a higher electron density by using electrons emitted from a plasma formed in a hole of a hollow cathode and secondary electrons emitted by ion collision on a cold cathode The electron beam emitting apparatus of the present invention has a technical object of providing an electron beam emitting apparatus in the form of a line.

Further, the present invention provides a line-shaped electron beam emitting apparatus that forms a cathode and an anode in a curved shape, so that a distance from a cathode to a generation position of an electron beam is formed to be shorter by forming a radius of curvature of the anode smaller than a radius of curvature of the cathode. There is another technical purpose in.

According to an aspect of the present invention, there is provided a plasma display apparatus comprising: a plasma display panel having a plurality of electron-emitting devices arranged in a chamber for holding an inner space in a vacuum state, And a plurality of gas holes which are formed in the upper side of the chamber and whose lower ends are curved upwardly and which penetrate from the upper side of the chamber in the longitudinal direction to introduce the process gas from the outside, A plurality of holes are formed on the curved surface corresponding to the cathode while being disposed on the lower side of the cathode so as to have a curvature radius smaller than the curvature radius of the lower end of the cathode, And an anode configured to emit electrons generated by the cathode downward, The cathode emits electrons generated by gas ionization and plasma in the gas holes to the lower side of the gas hole as the first negative voltage is applied, and the anode is an electron, which advances from the cathode side to the anode side as the second negative voltage is applied, The secondary electrons are generated by impinging gas near the anode to form ions and accelerated to the surface of the cathode by the first negative voltage of the cathode to generate secondary electrons and cause electrons generated in the gas holes of the cathode to collide with the cathode surface Wherein the voltage applied to the anode is supplied in a pulse form in which a positive voltage and a negative voltage alternate with each other and a positive voltage is applied to the anode, Characterized in that the negative voltage is in the form of a pulse with a wider time width. Value is provided.

The line-shaped electron beam emitting device is characterized in that the radius of curvature of the anode is set to be smaller than the radius of curvature of the cathode within a range of 10 to 30% of the radius of curvature of the cathode.

Also, the total area of the plurality of gas holes formed in the cathode is set to be within 10% of the cathode area.

Also, the electron beam emitting apparatus in the form of a line is characterized in that the gas holes formed in the cathode are formed in the direction toward the focus position of the anode.

A magnetic lens provided below the focal point of the anode to concentrate the line-shaped electron beam emitted from the anode onto the substrate; and a grid electrode provided between the magnetic lens and the substrate holder for accelerating the electron beam by a high voltage, Wherein the magnetic lens and the grid electrode are stacked alternately to form a tunnel part for guiding a discharge path of the electron beam.

Also, the electron beam emitting apparatus of the line type is characterized in that the tunnel portion is bent in one side.

In addition, an opening is formed in the lower part of the truncated cone shape, which is located in the chamber and accommodates the cathode and the anode in the inner space and has a smaller radius toward the lower side. The opening is divided into a space division The electron beam emitting apparatus further comprising a tubular body.

The electron beam emitting apparatus in the form of a line according to the present invention is a device in which electrons emitted from a plasma formed in a hole of a hollow cathode through a cathode in which a plurality of holes are formed and secondary electrons emitted by ion collision on a cold cathode, It is possible to emit an electron beam having a density.

In addition, the cathode and the anode are formed in a curved shape that curves upward, and the curvature radius of the anode is set to be smaller than the radius of curvature of the cathode so that the electron beam is positioned at a shorter distance from the cathode to minimize the size of the electron beam generating apparatus It is possible.

Further, by separating the space in which the electron beam is generated by the cathode and the anode in the chamber and the processing space by the electron beam by the truncated cone-shaped partitioning tube, the vacuum state of each space can be independently controlled, Stable operation is possible.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view for explaining a configuration of a line-shaped electron beam emitting apparatus according to an embodiment of the present invention. Fig.
FIG. 2 is a view for explaining the structure of the cathode 130 and the anode 140 shown in FIG. 1; FIG.
3 is a view for explaining a process of generating an electron beam generated by the cathode 130 and the anode 140 shown in FIG.
FIG. 4 illustrates a pulsed power supply supplied to the anode 140 in FIG. 3; FIG.
5 is a view for explaining a configuration of the tunnel part 120 shown in Fig.
6 and 7 are diagrams for explaining a configuration of a line-shaped electron beam emitting apparatus according to yet another embodiment of the present invention.

The scope of the present invention is not limited to the embodiments and drawings described in the present specification, and the scope of the present invention is not limited to these embodiments. Should not be construed as limited by That is, the embodiments are to be construed as being variously embodied and having various forms, so that the scope of the present invention should be understood to include equivalents capable of realizing technical ideas. Also, the purpose or effect of the present invention should not be construed as limiting the scope of the present invention, since it does not mean that a specific embodiment should include all or only such effect.

All terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used predefined terms should be interpreted to be consistent with the meanings in the context of the relevant art and can not be construed as having ideal or overly formal meanings which are not expressly defined in the present invention.

FIG. 1 is a view for explaining a configuration of a line-shaped electron beam emitting apparatus according to an embodiment of the present invention. FIG. 1 is a cross-sectional view of a processing apparatus 100 equipped with a line-shaped electron beam emitting apparatus according to an embodiment of the present invention. An internal cross-section is shown.

In the processing apparatus 100, an electron beam emitting device and a substrate to be processed are disposed in a chamber 110. [ The chamber 110 is formed with an inner space and one side is grounded. On the lower side, a gas exhaust port 102 for evacuating the chamber process gas to the outside to keep the inside of the chamber 110 in a vacuum state is formed.

 The electron beam emitting apparatus according to the present invention is disposed on the upper side of the chamber 110. The substrate to be processed is disposed on the lower side of the chamber 110 and is irradiated with electron beams in the form of lines generated from the electron beam emitting apparatus, A series of process steps are performed.

The line-shaped electron beam emitting apparatus according to the present invention basically comprises a cathode 130 and an anode 140 for electron beam generation.

The cathode 130 and the anode 140 are disposed at the upper end of the inner space of the chamber 110 and the anode 140 is disposed below the cathode 130 with a predetermined distance therebetween.

The cathode 130 includes a plurality of gas holes 131 penetrating in a longitudinal direction at an upper portion of the chamber 110, while a lower side of the cathode 130 is curved upward. The gas hole 131 is for introducing the process gas from the outside. As the process gas, an inert gas such as nitrogen (N ₂ ), argon (Ar), and helium (He) may be used. The cathode 130 uses a material such as tungsten, aluminum, carbon, graphite, or carbon nanotube (CNT) having a low work function.

2, the gas holes 131 formed in the cathode 130 are formed vertically downward from the upper end of the chamber 110 or are formed in a vertical direction from the upper end of the chamber 110, (Y) in the direction toward the focus position of the anode or the focus position of the anode. At this time, the cathode 130 may be formed by further forming a dielectric film in the gas hole 131 to further activate the formation of the plasma.

Further, in the present invention, since the process gas flows through the gas hole 131 formed in the cathode 130, the position of the anode 140 does not need to be limited to the average free path. That is, it is possible to secure the degree of freedom of the installation of the anode 140.

The anode 140 is spaced apart from the cathode 130 by a predetermined distance and has a plurality of holes 141 formed on a curved surface corresponding to the cathode 130. The anode 140 is formed of a material having a low electrical resistance in a net shape, and can be coated with carbon or the like.

Here, the generation efficiency of the secondary electrons differs depending on the material of the anode 140. For example, soft carbon materials saturate incident ions at relatively low voltages, e.g., less than -1 KV, while metal materials such as tungsten (W) saturate ion energy at relatively high voltages. Therefore, in the step of curing a material having a thickness of 10-100 nm, it is preferable to use a soft material such as CNT for the anode 140. In this case, it is preferable to alternately apply a negative voltage and a positive voltage to the anode to control the time for supplying ions and the time for passing electrons.

The cathode 130 and the anode 140 may have a radius of curvature ranging from 5 mm to 1000 mm and the anode 140 may have a radius of curvature smaller than a radius of curvature formed on the lower surface of the cathode 130. Here, if the radius of curvature of the anode 140 is too small, the density of the portion where the electron beam is concentrated is remarkably reduced. If the radius of curvature is too large, the focus position A where the electron beams are concentrated becomes long. Therefore, the radius of curvature of the anode 140 is preferably set to be smaller within a range of 10% to 30% of the radius of curvature of the cathode 130. [

This is because the electrons emitted in the gas holes 131 of the cathode 130 are emitted to a wide range at the outlet of the gas hole 131 so that the radius of curvature of the anode 140 is smaller than the radius of curvature of the lower surface of the cathode 130 So that electrons and secondary electrons distributed in a wide region below the cathode 130 can be efficiently focused.

Further, by configuring the radius of curvature of the anode 140 to be smaller than the radius of curvature of the lower surface of the cathode 130, even in the structure of generating the secondary electrons on the cold cathode, the direction of the ions led by the electric field of the anode, So that the concentrated position of the secondary electrons can be induced to be formed at a shorter focal distance.

Next, an electron beam generating process performed by the cathode 130 and the anode 140 having the above-described structure will be described with reference to FIG.

3, when a negative voltage is applied to the cathode 130 in a state where the process gas is introduced into the gas hole 131 of the cathode 130, the cathode 130, and more particularly, Plasma is formed inside the plurality of gas holes 131 formed, and the electrons 1 in the plasma are emitted to the lower side, that is, the cathode.

At this time, the total area of the plurality of gas holes 131 formed in the cathode 130 may be within 20% of the total area of the cathode, preferably about 10 %. This is because, when the gas holes 131 are arranged close to each other, the plasma generated in the gas holes 131 becomes unstable due to the occurrence of an arc or a close talk phenomenon which interferes with each other, It is considered that only the portion within 10% is used.

In addition, the gas holes 131 are preferably 3 to 10 mm in diameter and circular in shape, but may be formed in various shapes such as a square.

Meanwhile, when negative voltage is applied to the cathode 130, a negative voltage is applied to the anode 140 as well. At this time, the negative voltage applied to the anode 140 is set to be lower than the negative voltage applied to the cathode 130. The electrons 1 emitted to the lower side of the cathode 130 are ionized while ionizing the gas around the anode 140 and the ionized gas particles are injected into the anode 140 by a separate negative voltage electric field applied to the anode 140 And generates accelerated secondary electrons 2 on the cathode 130 and more particularly on a cold cathode by being attracted to the cathode 130 and accelerating and colliding with the cathode surface leading to the negative voltage electric field of the cathode 130. [

The electrons 1 emitted from the plasma by the ionization and ionization of the process gas in the gas hole 131 of the hollow cathode and the secondary electrons 2 emitted by the ion collision on the cold cathode Passes through the anode 140 in which a plurality of holes 141 are formed in a complex manner so that the electrons are focused at a high electron density at the focal position A of the anode 130. That is, a line-shaped high-density electron beam is formed at the focal position A of the anode 130.

In addition, the anode power supply supplies ions around the anode to the cathode with a negative power supply, but in order to control the operating pressure and the plasma state on the gas hole of the cathode, a positive voltage (+) and a negative voltage (-) are supplied alternately. At this time, the anode 140 maintains the plasma state on the cathode 130 at the negative voltage (-) to induce the generation of electrons and secondary electrons, and at the positive voltage (+ And the secondary electrons are emitted in a downward direction. The voltage applied to the anode 140 is in the form of a pulse having a time width (b) which is wider than the time width (a) of the positive voltage .

Meanwhile, the cathode 130 and the anode 140 may be disposed in an inner space of the space division tube 120 formed in the chamber 100. 1, a cathode 130 and an anode 140 are disposed in an inner space of the space division tube 120. In FIG.

A substrate holder 150 is disposed below the line-shaped electron beam emitting device, and a substrate 151 is placed on the substrate holder 150. A heating means 155 for curing the thin film formed on the upper surface of the substrate 151, for example, an infrared lamp, an electric heater, or the like may be provided below the substrate holder 150.

That is, a line-shaped electron beam generated by the cathode 130 and the anode 140 is discharged downward to perform a series of process steps on the substrate 151 disposed thereunder. At this time, the space partitioning tube 120 divides the inside of the chamber 110 into an electron beam generating space and a substrate processing space.

The space partitioning tube 120 has a truncated cone shape having a smaller radius from the upper side to the lower side. This can centralize the electron beam while minimizing the area over which the electron beam emitted through the anode 140 can react with the process gas.

An opening 121 is formed below the space partitioning tube 120. The spatial division tube 120 is formed such that the Z axis coordinate of the opening 121 is equal to the Z axis coordinate of the focal position A of the anode 130.

A tunnel portion 122 for guiding the electron beam emission path from the opening 121 is formed at a lower end of the space division tube 120 by a predetermined length. At this time, the tunnel part 122 increases the density of the electron beam focused on the focus position A of the anode 130, that is, the opening 121 of the space division tube 120, and concentrates the electron beam onto the substrate 151 So that the thin film formed on the substrate 151 is cured within a short period of time.

5, the tunnel part 122 is configured such that at least one magnetic lens 122A and a grid electrode 122B are alternately stacked in the longitudinal direction (direction in which electron beams are emitted) around the electron beam emitting path do. At this time, the magnetic lens 122A and the grid electrode 122B are configured so that the user can arbitrarily adjust an electric input level, for example, a current or a voltage level.

A gas shield 122C is additionally formed at the lower end of the tunnel part 122 to block external gas such as gas fumes generated in the substrate 150 from flowing into the space partitioning tube 120. [ As a result, it is possible to prevent internal contamination of the electron beam, and it is also possible to generate a more stable electron beam by blocking the arc generation in the cathode 130.

In addition, a vacuum line 122D may be additionally formed between the magnetic lens 122A and the grid electrode 122B to maintain the inner space of the tunnel part 122 in a vacuum state. In other words, it is possible to arbitrarily adjust the vacuum state inside the space partitioning tube 120 separately from the control of the space inside the chamber 110 through the vacuum line 123. Therefore, by independently controlling the degree of vacuum (pressure) in the space inside the space partitioning tube 122 in consideration of the degree of vacuum (pressure) inside the chamber 110, more stable electron beams can be generated.

The magnetic lens 122A concentrates the line-shaped electron beam introduced into the tunnel part 122 toward the substrate 151 side and the grid electrode 122B accelerates the secondary electrons by the high voltage, And more specifically, increases the density of the electron beam concentrated by the magnetic lens 122A by 10 times to 100 times. The grid electrode 122B may have at least one hole, and may be a grid having a slit structure having a predetermined length.

At this time, the concentration of the electron beam, that is, the electron beam width is controlled according to the magnetic field of the magnetic lens 122A, and the electron beam density is changed according to the high voltage level of 10 to 200 KV applied to the grid electrode 122B. That is, the density of the electron beam emitted to the outside of the space division tube 120 through the grid electrode 122B can be adjusted.

 The magnetic lens 122A and the grid electrode 122B do not necessarily have to form the tunnel portion 122 and may be formed on the lower side of the anode 140 or the opening 121 of the space division tube 120 Or may be arranged in a sequential manner. More specifically, a magnetic lens 122A may be provided below the focus position A of the anode 140, and a grid electrode 122B may be disposed between the magnetic lens 122A and the substrate 151. [

A process of curing the thin film formed on the substrate 151 in the line-shaped electron beam emitting apparatus thus constructed will be described below.

First, the internal space of the chamber 110 is set to a vacuum state in a state where the substrate 151 on which the thin film is formed is placed on the substrate holder 150 in the chamber 110.

Then, when a process gas is supplied through the gas hole 131 of the cathode 130 and a negative voltage is applied to the cathode 130, the process gas introduced into the gas hole 131 is ionized to generate plasma, The electrons are emitted to the lower side of the gas hole 131.

At this time, since a negative voltage is applied to the anode 140 separately from the cathode 130, the ions attracted by the negative voltage of the anode 140 collide with the cathode surface having a larger negative voltage to generate secondary electrons . Here, the negative voltage applied to the anode 140 may be appropriately set corresponding to the material of the anode 140. [ In other words, the negative voltage applied to the anode 140 is generally set lower than the negative voltage applied to the cathode 130, but may be equal to or greater than the negative voltage applied to the cathode 130 depending on the material of the anode 140. [ Can be set.

The electrons generated in the gas holes 131 of the cathode 130 and the secondary electrons generated on the surface of the cathode 130 simultaneously pass through the holes 141 of the anode 140, (A). At this time, the power applied to the cathode 130 may be supplied in the form of RF (Radio Frequency) + DC or Pulsed DC in addition to the DC power.

Generally, the cold cathode electron emitting device does not have a wide operating pressure and generates electron beams using only secondary electrons due to ion collision, so that the electron emission effect is lower than the method using plasma. Further, depending on the position of the anode, the voltage applied to the cathode must be changed to enable the secondary electron emission, so that the operating voltage range is limited.

However, the electron beam emitting apparatus according to the present invention is insensitive to the operating pressure and the position of the anode, and by using electrons on the plasma and cold cathode electrons (secondary electrons) in combination, it is possible to realize an electron beam having a high electron density.

On the other hand, the electron beam focused on the focal position A of the anode 140 moves toward the substrate 151 side while being made dense by the tunnel portion 122. At this time, the magnetic field level is changed through the voltage supplied to the magnetic lens 122A, and a high voltage is applied to the grid electrode 122B so that the electron beam is accelerated to move downward (toward the substrate 151).

That is, the electron beam generated in the space division tube 120 passes through the tunnel portion 122 and is applied to at least one of the width, acceleration voltage, and pulse width of the electron beam corresponding to the voltage levels of the magnetic lens 122A and the grid electrode 122B And the state including the above is shifted to the lower side. At this time, the grid electrode 122B can be used separately from the power source of the cathode 130, and the deposition range WINDOW in the thin film deposition or etching process through the adjustment of the voltage level of the magnetic lens 122A and the grid electrode 122B, Can be secured more variously.

In addition, by generating N2 gas or the like through the gas shield 122C, the gas fume generated from the substrate 151 side is prevented from flowing into the space partitioning tube 120, and moreover, 122D to regulate the vacuum state inside the tunnel part 122 and further inside the space partitioning tube 120. [

On the other hand, the electron beam emitted through the lower part of the space division tube 120, that is, the tunnel part 122, penetrates into the thin film formed on the upper surface of the substrate 151.

The electrons penetrated into the thin film formed on the substrate 151 cause the moisture and the solvent in the thin film to be discharged, accelerating the cross linking and accelerating the curing. At this time, the upper and lower portions of the thin film can be uniformly cured by the heating operation by the heating means 155.

When the electron beam emission in the form of a line is completed on the substrate 151, the substrate 151 is unloaded from the substrate holder 150 to complete the curing process of the thin film.

As described above, the line-shaped electron beam emitting apparatus of the present invention can cure an insulating material such as a polyimide film or the like by using an electron beam in the form of a line, adjust the energy of the electron beam to change process conditions, And can be used for etching and deposition of thin films.

6 is a view for explaining a configuration of a line-shaped centralized electron beam emitting apparatus according to another embodiment of the present invention, in which a tunnel part 122 is provided at one side so that an electron beam is emitted toward a side surface of the chamber 110 It can be formed in a folded shape, that is, a shape of a silver letter ("b"). In this case, the substrate 151 may be disposed at an appropriate position, for example, at a side surface in the chamber 110, through which the electron beam emitted through the tunnel portion 121 can perform a deposition or etching (etching) process or the like.

1, the substrate 151 is formed in a shape of a bending shape of the tunnel part 122, that is, a tongue-like shape ("b"), But it can also be applied to a structure in which it is located at the lower end of the electron beam emitted through the tunnel part 122. 7, a gas inlet 200 for introducing the process gas into the upper side where the substrate 121 is formed is additionally provided, and a process of introducing the process gas introduced from the upper side of the substrate 121 through the gas inlet 200 So that the process of etching or vapor deposition with respect to the substrate 121 can be made easier by forming a plasma by ionizing the electron beam by dropping the gas.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

110: chamber 120: space division tube
121: opening 122: tunnel part
130: cathode 140: anode
150: substrate holder 151: substrate
155: Heating means
122A: Magnetic lens 122B: Grid electrode
122C: gas shield 122D: vacuum line

Claims (7)

There is provided an electron beam emitting apparatus in the form of a line which is provided inside a chamber for keeping an internal space in a vacuum state and generates an electron beam and emits an electron beam to a substrate positioned under the electron beam,
And a plurality of gas holes which are formed on the upper side of the chamber and whose lower ends are curved upwardly and penetrate from the upper side of the chamber in the longitudinal direction to introduce the process gas from the outside, A cathode for ionizing the process gas to form a plasma,
A plurality of holes formed on the curved surface corresponding to the cathode, the anode having a radius of curvature smaller than the radius of curvature of the lower end of the cathode and emitting electrons generated by the cathode to the lower side, ≪ / RTI >
The cathode emits electrons generated by gas ionization and plasma in the gas holes to the lower side of the gas holes as the first negative voltage is applied,
As the second negative voltage is applied to the anode, the electrons traveling from the cathode side to the anode side ionize the gas in the vicinity of the anode to form ions. In addition, the anode accelerates to the cathode surface by the first negative voltage of the cathode, And the secondary electrons generated by the cathode surface collision with the electrons generated in the gas holes of the cathode are collectively focused at the focus position of the anode through the holes formed in the anode,
Wherein a voltage applied to the anode is supplied in a pulse form in which a positive voltage and a negative voltage alternate and a negative voltage is formed in a pulse shape having a wider width than a positive voltage. Device.
The method according to claim 1,
Wherein the radius of curvature of the anode is set to be smaller than the radius of curvature of the cathode within a range of 10 to 30% of the radius of curvature of the cathode.
The method according to claim 1,
And the total area of the plurality of gas holes formed in the cathode is set to be within 10% of the cathode area.
The method according to claim 1,
Wherein the gas hole formed in the cathode is formed in a direction toward the focal position of the anode.
The method according to claim 1,
A magnetic lens provided below the focal point of the anode to concentrate the line-shaped electron beam emitted from the anode onto the substrate,
And a grid electrode provided between the magnetic lens and the substrate holder for accelerating the electron beam by a high voltage,
Wherein the magnetic lens and the grid electrode are stacked alternately so as to form a tunnel portion for guiding a discharge path of the electron beam.
6. The method of claim 5,
Characterized in that the tunnel portion is bent in one direction.
The method according to claim 1,
A cathode and an anode are housed in the chamber, and a truncated cone shape having a smaller radius toward the lower side is formed in the inner space. An opening is formed in the space partitioning tube formed at a position corresponding to the focal position of the anode Wherein the electron beam emitting device is further comprised of an electron beam emitting device.

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