KR101881593B1 - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
- Publication number
- KR101881593B1 KR101881593B1 KR1020110122236A KR20110122236A KR101881593B1 KR 101881593 B1 KR101881593 B1 KR 101881593B1 KR 1020110122236 A KR1020110122236 A KR 1020110122236A KR 20110122236 A KR20110122236 A KR 20110122236A KR 101881593 B1 KR101881593 B1 KR 101881593B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110122236A KR101881593B1 (en) | 2011-11-22 | 2011-11-22 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110122236A KR101881593B1 (en) | 2011-11-22 | 2011-11-22 | Semiconductor device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130056568A KR20130056568A (en) | 2013-05-30 |
KR101881593B1 true KR101881593B1 (en) | 2018-07-25 |
Family
ID=48664563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110122236A KR101881593B1 (en) | 2011-11-22 | 2011-11-22 | Semiconductor device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101881593B1 (en) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000003970A (en) * | 1997-12-05 | 2000-01-07 | Sony Corp | Non-volatile semiconductor storage device and method for applying its write voltage |
KR100278661B1 (en) * | 1998-11-13 | 2001-02-01 | 윤종용 | Nonvolatile Memory Device and Manufacturing Method Thereof |
JP2001024075A (en) * | 1999-07-13 | 2001-01-26 | Sony Corp | Nonvolatile semiconductor memory and writing thereof' |
JP2001160618A (en) * | 1999-12-01 | 2001-06-12 | Toshiba Corp | Non-volatile semiconductor memory device and its manufacturing method |
KR100564629B1 (en) * | 2004-07-06 | 2006-03-28 | 삼성전자주식회사 | EEPROM device and manufacturing method therefor |
KR100613288B1 (en) * | 2004-12-30 | 2006-08-21 | 동부일렉트로닉스 주식회사 | SONOS cell having improved reliability and method of fabricating the same |
WO2007013133A1 (en) * | 2005-07-25 | 2007-02-01 | Spansion Llc | Semiconductor device and method for manufacturing same |
JP4825541B2 (en) * | 2006-02-23 | 2011-11-30 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
JP5161494B2 (en) * | 2007-02-01 | 2013-03-13 | ルネサスエレクトロニクス株式会社 | Semiconductor memory device |
KR20100131718A (en) * | 2009-06-08 | 2010-12-16 | 주식회사 하이닉스반도체 | Junction of a non-volatile memory device and forming method of the same |
-
2011
- 2011-11-22 KR KR1020110122236A patent/KR101881593B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20130056568A (en) | 2013-05-30 |
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E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |