KR101858585B1 - Apparatus for combining power in millimeter wave system - Google Patents

Apparatus for combining power in millimeter wave system Download PDF

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KR101858585B1
KR101858585B1 KR1020180030214A KR20180030214A KR101858585B1 KR 101858585 B1 KR101858585 B1 KR 101858585B1 KR 1020180030214 A KR1020180030214 A KR 1020180030214A KR 20180030214 A KR20180030214 A KR 20180030214A KR 101858585 B1 KR101858585 B1 KR 101858585B1
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waveguide
formed
part
dielectric
conductor
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KR1020180030214A
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Korean (ko)
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김영곤
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엘아이지넥스원 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/04Coupling devices of the waveguide type with variable factor of coupling
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/087Transitions to a dielectric waveguide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • H01P5/184Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
    • H01P5/185Edge coupled lines

Abstract

The present invention divides an H plane or an E plane of a waveguide and divides the transmission line of the PCB into a plurality of parts so as to differentiate each part based on the formation position of the conductor, We propose a power coupling device that implements a power coupling scheme using a structure. An apparatus for distributing power in a millimeter wave system, comprising: a power divider for dividing power by dividing an H plane or E plane of a waveguide; A first part formed between the transmission line and the first waveguide, the first part including a first conductor formed on a part of a rim surface and a first dielectric laminated on an entire inner space formed by the first conductor; A second part formed between the first waveguide and the second waveguide, the second part including a second conductor formed on the entire circumference of the first waveguide and a second dielectric layer formed on a part of the internal space surrounded by the second conductor; And a third part formed between the second waveguide and the third waveguide, the third part including a third conductor formed on the entire edge surface.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a millimeter-

The present invention relates to a power coupling device for distributing and coupling power in a waveguide. More particularly, to a power coupling device for distributing and coupling power in a waveguide of a millimeter wave system.

In a millimeter wave system, a power coupling method is used to obtain high power. However, the conventional power coupling method has a problem that its size and structure are limited due to the transition structure connecting the transmission line of the PCB and the waveguide.

In addition, the conventional power coupling method is implemented on a PCB in a binary manner. In such a binary method, there is a problem that the power coupling efficiency decreases due to coupling loss as the frequency increases.

Korean Patent Publication No. 2017-0021152 (published on February 27, 2017).

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide a waveguide device that divides an H plane or an E plane of a waveguide and divides a transmission line of the PCB into a plurality of parts, And a power combining device that implements a power coupling method using a transition structure that differentially forms each part based on the position, the presence or absence of a dielectric, and the degree of lamination.

It is another object of the present invention to propose a power amplifying system having such a power coupling device.

However, the objects of the present invention are not limited to those mentioned above, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

SUMMARY OF THE INVENTION The present invention has been conceived in order to achieve the above-mentioned object, and it is an object of the present invention to divide electric power in a millimeter wave system and to divide electric power by dividing an H plane or E plane of a waveguide Distribution; A first part formed between a transmission line and a first waveguide, the first part including a first conductor formed on a part of a rim surface and a first dielectric laminated on an entire inner space formed by the first conductor; A second part formed between the first waveguide and the second waveguide, the second part including a second conductor formed on the entire circumference of the first waveguide and a second dielectric layer formed on a part of the inner space surrounded by the second conductor; And a third part formed between the second waveguide and the third waveguide, the third part including a third conductor formed on an entire circumference of the third waveguide.

The present invention also relates to a power distributing unit for distributing power in a millimeter wave system, which divides an H plane or an E plane of a waveguide and distributes power; A first part formed between a transmission line and a first waveguide, the first part including a first conductor formed on a part of a rim surface and a first dielectric laminated on an entire inner space formed by the first conductor; A second part formed between the first waveguide and the second waveguide, the second part including a second conductor formed on the entire circumference of the first waveguide and a second dielectric layer formed on a part of the inner space surrounded by the second conductor; And a third part formed between the second waveguide and the third waveguide, the third part including a third conductor formed on the entire circumferential surface; And a power amplifier for amplifying power output from the power coupling device.

The present invention can achieve the following effects through the configurations for achieving the above object.

First, the coupling loss can be reduced and the power coupling efficiency can be increased.

Second, it can have high output and broadband characteristics.

Third, the thermal efficiency can be improved by mounting the amplifier in a planar shape.

1 is a perspective view showing a structure of a waveguide power combiner according to a first embodiment of the present invention.
2 is a perspective view showing a signal of a waveguide power combiner according to a first embodiment of the present invention.
3 is a perspective view showing a waveguide according to a second embodiment of the present invention.
4 is a perspective view showing a structure of a waveguide power combiner according to a second embodiment of the present invention.
5 is a perspective view showing a structure of a waveguide power combiner according to a third embodiment of the present invention.
6 is a perspective view showing a structure of a waveguide power combiner according to a fourth embodiment of the present invention.
7 is a perspective view of a transition structure interconnecting a microstrip line and a waveguide according to a first embodiment of the present invention.
8 is a plan view of a transition structure interconnecting the microstrip line and the waveguide according to the first embodiment of the present invention.
9 is a cross-sectional view of a transition structure interconnecting a microstrip line and a waveguide according to a first embodiment of the present invention.
10 is a perspective view of a transition structure interconnecting a microstrip line and a waveguide according to a second embodiment of the present invention.
11 is a plan view of a transition structure interconnecting a microstrip line and a waveguide according to a second embodiment of the present invention.
12 is a sectional view of a transition structure interconnecting a microstrip line and a waveguide according to a second embodiment of the present invention.
13 is a reference diagram for explaining the influence of a via hole provided in the transition structure proposed in the present invention.
FIG. 14 is a conceptual diagram showing the structure of a second dielectric constituting the second part in the transition structure according to the first embodiment of the present invention.
15 is a reference diagram for explaining impedance matching of a transition structure according to the first embodiment of the present invention.
FIG. 16 is a conceptual diagram showing the structure of a second dielectric constituting the fifth part in the transition structure according to the second embodiment of the present invention. FIG.
17 is a reference diagram for explaining a third part of the transition structure proposed in the present invention.
18 is a diagram illustrating an example of a power amplifier using the waveguide power combiner proposed in the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, the preferred embodiments of the present invention will be described below, but it is needless to say that the technical idea of the present invention is not limited thereto and can be variously modified by those skilled in the art.

Hereinafter, a power combiner for a millimeter wave searcher proposed in the present invention will be described in detail with reference to the drawings.

1 is a perspective view showing a structure of a waveguide power combiner according to a first embodiment of the present invention.

Referring to FIG. 1, a waveguide power combiner 100 according to a first embodiment of the present invention has a structure 110 that cuts an H-plane of a waveguide and uses both sides. Hereinafter, the waveguide power combiner 100 according to the first embodiment will be referred to as a first waveguide power combiner 100.

Referring to FIG. 1, when the waveguide is viewed from the side, the horizontal direction can be divided into the H-plane and the vertical direction can be divided into the E-plane, and the H-plane of the waveguide is divided into the lower surface and the upper surface. Thus, the substrate is positioned on the lower surface.

The first waveguide power combiner 100 has a structure 130 that is coupled (distributed) in a two-way manner in a substrate integrated waveguide (SIW) 120. The first waveguide power combiner 100 is enabled to distribute power in a four-way manner via these structures 110,

Alternatively, the first waveguide power combiner 100 may use a substrate thickness waveguide instead of the substrate integrated waveguide 120.

2 is a perspective view showing a signal of a waveguide power combiner according to a first embodiment of the present invention.

Referring to FIG. 2, an arrow indicates a signal flow and schematically illustrates an E-field at each step. When a signal enters the regular waveguide, it is split into the H-plane of the waveguide and the signal is divided into two. Each distributed signal is split into two parts, split into E-planes (divided into microstrip lines from SIW). The combination and distribution can be used at the same time, and it is distinguished according to the flow of the signal. It is dividing that the signal is applied, and it is a combination that the distributed signal is synthesized in reverse. Generally, two of them can be used in common.

3 is a perspective view showing a waveguide according to a second embodiment of the present invention.

Basically, the SIW has a waveguide structure through a via. The waveguide of the substrate thickness according to an embodiment of the present invention is a structure in which a wall is formed as a mechanism instead of a via implemented as a housing without a via.

4 is a perspective view showing a structure of a waveguide power combiner according to a second embodiment of the present invention. Hereinafter, the waveguide power combiner 200 according to the second embodiment will be referred to as a second waveguide power combiner 200.

4, the second waveguide power combiner 200 also has a structure 210 that cuts the H plane of the waveguide and uses both sides of the waveguide like the first waveguide power combiner 100, (Distributed) in a two-way manner in the SIW 120. The second waveguide power combiner 200 is able to distribute the power in a 4-way manner as well as the first waveguide power combiner 100 through these structures 210 and 220.

The difference of the second waveguide power combiner 200 with respect to the first waveguide power combiner 100 is that the formation position of the conductor 230 in the transition structure 220 connecting the transmission line of the PCB and the waveguide is different. A detailed description thereof will be described later.

5 is a perspective view showing a structure of a waveguide power combiner according to a third embodiment of the present invention. Hereinafter, the waveguide power combiner 300 according to the third embodiment will be referred to as a third waveguide power combiner 300.

5, the third waveguide power combiner 300 cuts the H plane of the waveguide like the first waveguide power combiner 100 and the second waveguide power combiner 200, (Distributed) in a two-way manner in a substrate integrated waveguide (SIW) 120. The structures 320a, The third waveguide power combiner 300 distributes the power in a 4-way manner, like the first waveguide power combiner 100 and the second waveguide power combiner 200, through these structures 310a, 310b, 320a, Lt; / RTI >

The third waveguide power combiner 300 may have the same transition structure as the second waveguide power combiner 200 due to the transition structures 320a and 320b connecting the transmission line of the PCB and the waveguide, It is not. For example, the third waveguide power combiner 300 may have the same transition structure as the first waveguide power combiner 100 as the transition structures 320a and 320b.

The waveguide power combiner may be formed in a short channel as shown in FIGS. 1 and 2 in the present invention, but it may be formed in multiple channels as shown in FIG. When the waveguide power combiner is formed in multiple channels, the waveguide power combiner may further include a thin film resistor to increase the degree of isolation between the channels.

Referring to FIG. 5, the third waveguide power combiner 300 may increase the degree of isolation between channels by inserting a thin film resistor 334 on the propagation path of the wave in the waveguide. The thin film resistor 334 may be inserted into one side of the passageway 333 when the plurality of passageways 331 and 332 provided for multiple channels are integrated into one passageway 333.

As shown in Fig. 5, the structure for splitting the waveguide into H-planes is the same. The waveguide can be further extended laterally in the process of dividing into two. Thin film resistors are literally sheets with resistive elements. When inserting them into a part that is split into H-plane, the degree of isolation of the distributed signals becomes much higher. Typically, placing a 125 ohm / sq sheet resistor in the Ka band will increase the isolation between the two output ports by more than 20 dB.

6 is a perspective view showing a structure of a waveguide power combiner according to a fourth embodiment of the present invention. Hereinafter, the waveguide power combiner 400 according to the fourth embodiment will be referred to as a fourth waveguide power combiner 400.

Referring to FIG. 6, the fourth waveguide power combiner 400 has a structure 410 for distributing the power in a four-way manner by distributing the E-plane of the waveguide twice. The fourth waveguide power combiner 400 may include a conductor 430 that is geometrically reduced in accordance with the propagation direction of the wave in the transition structure 420 connecting the transmission line of the PCB and the waveguide, It is also possible to provide a conductor having the same shape as the conductors 141 and 142 in the coupler 100 and the conductor 230 in the second waveguide power combiner 200 and the like.

As shown in Fig. 6, it is preferable that the waveguide is transformed into a waveguide whose major axis is widened in a regular waveguide and then split into an E-plane. If you split it like this twice, it will be distributed by 4way. And the transition structure from the waveguide to the microstrip can be applied to all of the above-mentioned transition structures.

Next, a transition structure of the first waveguide power combiner 100 to the fourth waveguide power combiner 400, which connects the transmission line of the PCB and the waveguide, will be described.

The transition structure proposed in the present invention can be applied to a transition structure between a waveguide for a millimeter wave ultra small radar system and a PCB transmission line, and relates to a transition structure connected to a waveguide in a microstrip line, a co-planar waveguide (CPW)

In the present invention, a PCB transmission line such as a microstrip line, a CPW, or the like is transferred to a SIW (dielectric integrated waveguide) or a dielectric waveguide. In the present invention, a dielectric waveguide (or SIW), which is stacked as a dielectric for impedance matching, has a dielectric tapering or stepped shape. According to the present invention, it is possible to adjust the bandwidth by such impedance matching, and it is possible to provide design simplicity.

Hereinafter, the present invention will be described in detail with reference to the drawings.

7 is a perspective view of a transition structure interconnecting a microstrip line and a waveguide according to a first embodiment of the present invention. And FIG. 8 is a plan view of a transition structure interconnecting the microstrip line and the waveguide according to the first embodiment of the present invention.

9 is a cross-sectional view of a transition structure interconnecting a microstrip line and a waveguide according to a first embodiment of the present invention. Specifically, Fig. 9 (a) is a sectional view taken along the line A in Fig. 8, and Fig. 9 (b) is a sectional view taken along line B in Fig. FIG. 9C is a cross-sectional view taken along line C of FIG. 8, and FIG. 9D is a cross-sectional view taken along line D of FIG. 9 (e) is a sectional view taken along the line E in Fig.

7 and 8, the transition structure 500 of the first embodiment is a structure that is transferred from the microstrip line 540 to the cylindrical waveguide 570, and includes a first part (Part A) 510, a second part (Part B) 520 and a third part (Part C) 530.

The first part 510 is formed between the microstrip line 540 and the substrate integrated waveguide (SIW) 550 and includes a first dielectric 511 and a first conductor 512.

The first dielectric layer 511 is filled in the inner space formed by being surrounded by the upper surface, the opposite surface, the lower surface, and the like of the first part 510. The permittivity of the first dielectric layer 511 can be determined using the following equation.

ε = ε 0 × ε r

In the above equation,? Represents the dielectric constant of the first dielectric 511. epsilon 0 means the dielectric constant of vacuum or free space (8.85 x 10 -12 F / m), and epsilon r means the relative dielectric constant of the first dielectric 511 at room temperature.

The first conductor 512 is made of a metal material and is formed on the upper end surface and the lower end surface of the first part 510, respectively. The first conductor 512 formed on the upper end face of the first part 510 and the first conductor 512 formed on the lower end face of the first part 510 are respectively connected to the a conductor 512a and the b conductor 512b, the b-conductor 512b is formed over the entire surface, whereas the a-conductor 512a is formed on only a part of the surface (see Fig. 9A).

The a conductor 512a is formed in the longitudinal direction from the point where the microstrip line 540 is located to the point where the substrate integrated waveguide 550 is located. In the center of the microstrip line 540, the substrate integrated waveguide 550 One in the direction in which they are located.

And the width of the conductor a 512a is increased as the waveguide conductor 512a gets closer to the substrate integrated waveguide 550. The a conductor 512a has a constant width from the microstrip line 540 to the first point 513 located between the microstrip line 540 and the substrate integrated waveguide 550, Integrated waveguide 550 to the substrate-integrated waveguide 550, as shown in FIG. At this time, the conductor a 512a may be formed in a structure having increased widths on both sides.

On the other hand, the a-conductor 512a gradually increases in width from the first point 513 to the second point 514 located between the first point 513 and the substrate integrated waveguide 550, Integrated waveguide 550 from the second point 514 in the same manner as the waveguides 512a and 512b.

13A, a via hole 710 may be formed on both sides of the a-conductor 512a in the direction of the substrate integrated waveguide 550 from the microstrip line 540 (see FIG. 13A) . The present invention can contribute to achieving better performance by blocking leaked signals in accordance with the presence of such via holes 710.

13 is a reference diagram for explaining the influence of a via hole provided in the transition structure proposed in the present invention. Conventionally, there is a problem that signal leakage occurs because the via hole 710 does not exist as shown in FIG. 13 (b). On the other hand, in the present invention, since the via hole 710 exists as shown in FIG. 13 (c), it can be seen that signal leakage is prevented.

It is also possible to form a PCB transmission line in place of the microstrip line 540 in the transition structure 500 of the first embodiment. In this case, the PCB transmission line can be implemented as either a co-planar waveguide (coplanar waveguide) or a substrate integrated waveguide (SIW).

It is also possible to use a substrate-height waveguide in place of the substrate integrated waveguide 550 in the transition structure 500 of the first embodiment. Here, the substrate-height waveguide refers to a substrate waveguide having a thickness of the substrate in which a dielectric is stacked.

The second part 520 is formed between the substrate integrated waveguide 550 and the reduced height waveguide 560 and includes a second dielectric 521 and a second conductor 522. The substrate reduction waveguide 560 refers to a substrate waveguide having a high substrate thickness.

The second dielectric layer 521 is filled in a part of the inner space formed by the upper surface, both sides, the lower surface, and the like of the second part 520 (substrate dielectric transition in the substrate-height waveguide).

The second dielectric layer 521 is formed in the longitudinal direction to a position where the substrate reduction waveguide 560 is located at a position where the substrate integrated waveguide 550 is located. In the center of the substrate integrated waveguide 550, the substrate reduction waveguide 560 is located Direction.

Further, the second dielectric layer 521 is characterized in that the width thereof becomes narrower toward the substrate reduction waveguide 560. A more detailed description of this structural feature of the second dielectric 521 will be described later with reference to Figs. 14 and 15. Fig.

The second conductors 522 are formed on the upper surface, both sides, and the lower surface of the second part 520, respectively. The second conductor 522 is formed over the entire upper surface, both sides, and the lower surface of the second part 520 (see FIGS. 7B and 7C), unlike the first conductor 512.

On the other hand, a part of the inner space of the second part 520 surrounded by the second conductor 522 is filled with the second dielectric 521, and the other space is formed of the vacuum 523 ) Reference).

The third part 530 is formed between the substrate reduction waveguide 560 and the cylindrical waveguide 570 and includes a third conductor 531. The tubular waveguide 570 may be implemented with either a substrate integrated waveguide (SIW) or a dielectric.

Like the second conductor 522, the third conductor 531 may be formed over the entire upper surface, both sides, and the bottom surface of the third part 530.

The lower end face of the third part 530 is characterized in that it is stepped down when it moves in the direction in which the cylindrical waveguide 570 is located at the position where the substrate reducing waveguide 560 is located as shown in FIG. 17 (a) . Accordingly, the inner space of the third part 530 surrounded by the third conductor 531 is gradually widened as the lower end surface of the third part 530 descends (Fig. 9D) And (e)). The stepwise descent of the lower end surface of the third part 530 means that the lower end surface of the third part 530 descends in a stepped structure. 17 is a reference diagram for explaining a third part of the transition structure proposed in the present invention.

For example, the height formed by the top and bottom surfaces of the third part 530 may be increased from the substrate reduction waveguide 560 to the third point 532 located between the substrate reduction waveguide 560 and the tubular waveguide 570 Has a first value and has a second value greater than the first value from the third point 532 to the fourth point 533 located between the third point 532 and the tubular waveguide 570, And from the point 533 to the cylindrical waveguide 570 with a third value larger than the second value.

Meanwhile, the lower end surface of the third part 530 may be gradually lowered when the tubular waveguide 560 moves in the direction in which the tubular waveguide 570 is located, as shown in FIG. 17 (b) . The lowering of the lower end surface of the third part 530 in the above description means that the lower end surface of the third part 530 is lowered in a tapered structure.

Meanwhile, the inner space of the third part 530 surrounded by the third conductor 531 is formed in a vacuum.

10 is a perspective view of a transition structure interconnecting a microstrip line and a waveguide according to a second embodiment of the present invention. 11 is a plan view of a transition structure interconnecting a microstrip line and a waveguide according to a second embodiment of the present invention.

12 is a sectional view of a transition structure interconnecting a microstrip line and a waveguide according to a second embodiment of the present invention. Specifically, FIG. 12A is a sectional view taken along the line A in FIG. 9, and FIG. 12B is a cross-sectional view taken along line B in FIG. FIG. 12C is a cross-sectional view taken along line C of FIG. 11, and FIG. 12D is a cross-sectional view taken along line D of FIG. 12 (e) is a cross-sectional view taken along the line E in FIG.

According to Fig. 10 and Fig. 11, the transition structure 600 of the second embodiment has a structure which is transferred from the microstrip line 540 to the cylindrical waveguide 570 like the transition structure 500 of the first embodiment, Four parts 610, a fifth part 620, and a sixth part 630. [

The fourth part 610 is formed between the microstrip line 540 and the substrate integrated waveguide 550 and includes the first dielectric 511 and the first conductor 512 in the same manner as the first part 510 do.

The first part 510 has been described above with reference to Figs. 5 to 7, and a detailed description thereof will be omitted here.

The fifth part 620 is formed between the substrate integrated waveguide 550 and the substrate reduction waveguide 560 and includes a fifth dielectric 621 and a fifth conductor 622.

The fifth dielectric 621 is filled in a part of the inner space formed by being surrounded by the upper surface, both sides, the lower surface, and the like of the fifth part 620.

The fifth dielectric 621 is formed in the longitudinal direction to the point where the substrate reduction waveguide 560 is located at the position where the substrate integrated waveguide 550 is located. The substrate reduction waveguide 550 is formed on both sides (or both ends) 560 are located.

Further, the fifth dielectric 621 is characterized in that it becomes narrower toward the substrate reduction waveguide 560. A more detailed description of this structural feature of the fifth dielectric 621 will be described later with reference to FIG.

The fifth conductor 622 is formed on the upper surface, both sides, and the lower surface of the fifth part 620, respectively. The fifth conductor 622 is formed over the entire upper surface, both sides, and the lower surface of the fifth part 620, as in the case of the second conductor 522 (see FIGS. 12B and 12C).

Meanwhile, a part of the inner space of the fifth part 620 surrounded by the fifth conductor 622 is filled with the fifth dielectric 621, and the other space is formed by the vacuum 223 ) Reference).

The sixth part 630 is formed between the substrate reduction waveguide 560 and the cylindrical waveguide 570 and includes the third conductor 531 in the same manner as the third part 530.

The third part 530 has been described above with reference to Figs. 7 to 9, and a detailed description thereof will be omitted here.

Next, the structure of the second dielectric body 521 constituting the second part 520 in the transition structure 500 according to the first embodiment of the present invention will be described in detail.

FIG. 14 is a conceptual diagram showing the structure of a second dielectric constituting the second part in the transition structure according to the first embodiment of the present invention.

The second dielectric 521 is formed longitudinally toward the substrate reduction waveguide 560 in the substrate integrated waveguide 550 as described above. This second dielectric 521 is characterized by a narrower width as it approaches the substrate reduction waveguide 560.

The second dielectric layer 521 may be formed in a stepwise narrowed structure as shown in FIG. 14 (a), and may have a structure in which the width gradually decreases as shown in FIG. 14 (b) .

The second dielectric body 521 may be formed in a stepped structure in which only the center portion of the second dielectric body 521 is left as it goes from the substrate integrated waveguide 550 to the substrate reduction waveguide 560.

The second dielectric layer 521 is formed to have a first width from the substrate integrated waveguide 550 to the fifth point 811 located between the substrate integrated waveguide 550 and the substrate reduction waveguide 560, Is formed with a second width less than the first width from the fifth point 811 to the sixth point 812 located between the fifth point 811 and the substrate reduction waveguide 560 and from the sixth point 812 To a seventh point 813 located between the sixth point 812 and the substrate reduction waveguide 560. The third point 813 may be a third width smaller than the second width. At this time, the second dielectric layer 521 may be formed to have a reduced width at both sides.

The second dielectric layer 521 may be formed in a tapered structure in which only the center portion of the second dielectric layer 521 is left as it goes from the substrate integrated waveguide 550 to the substrate reduction waveguide 560.

In detail, the second dielectric 521 is formed to have a constant width from the substrate integrated waveguide 550 to the eighth point 821 located between the substrate integrated waveguide 550 and the substrate reduction waveguide 560, It may be formed in a structure in which the width is gradually narrowed from the eighth point 821 to the ninth point 822 located between the eighth point 821 and the substrate reduction waveguide 560. In this case, the second dielectric body 521 may be formed to have a geometric width narrowing from the eighth point 821 to the ninth point 822 exponentially. In this embodiment, .

15 is a reference diagram for explaining impedance matching of a transition structure according to the first embodiment of the present invention. 15 is a sectional view taken along line A-A 'in Fig.

In the case of a waveguide stacked with a dielectric, the impedance is generally low and the impedance is high as the dielectric disappears. In the present invention, different impedances of two different parts, such as the relationship between the substrate integrated waveguide 550 in which the dielectric is filled with the dielectric and the substrate reduction waveguide 560 in which the cavity is empty, are divided into two stepped impedance transformers Impedance matching can be performed using a higher number of stages.

Also, in the present invention, impedance matching can be realized by using various kinds of tapers such as a Klopfenstein taper and a linear taper.

The impedance at the portion A-A ', which is one point of the second part 520, can be obtained using the following equation (1).

Figure 112018026000629-pat00001

Where Z represents the impedance at the A-A 'portion of the second part 520. η is the intrinsic impedance of free space and has a value of 120π. κ 0 means the intrinsic wave number of free space and is determined by the wavelength in air based on the following equation.

κ 0 = 2π / λ = 2πf / (3 × 10 8)

β means a propagation constant and can be obtained using the following equation (2).

Figure 112018026000629-pat00002

Y 1 , Y 3, and Y 13 can be obtained using the following equations (3) and (4).

In the case of a waveguide structure in which a dielectric is inserted, various higher-order modes are generated, so that a higher-order mode impedance must be considered. The propagation admittance proceeding at TE m0 can be represented by Y m and can be obtained using Equation (3).

Figure 112018026000629-pat00003

On the other hand, if the left and right are symmetric structures, even modes such as TE 20 and TE 40 can not proceed. All modes must be considered for very accurate calculations, but accurate values within 5% error can be obtained even when considering only the two modes that most affect the overall impedance. Therefore, in the present invention, propagation constants are calculated in consideration of only TE 10 and TE 30 modes.

The TE 30 mode is strongly coupled to the TE 10 mode, and the admittance due to the coupling-induced mode can be represented by Y 13 , which can be obtained using the following equation (4).

Figure 112018026000629-pat00004

In the above, a represents the width (width) of the second part 520. And d denotes the width (width) of the portion where the vacuum is formed when the second dielectric body 521 is formed at the center in the transition structure 500 according to the first embodiment of the present invention and a vacuum is formed on both sides thereof. That is, d means the shortest distance from one end of the second part 520 to one side of the second dielectric 521.

The impedance matching process is similar to that in the substrate integrated waveguide 550 where the width c of the second dielectric 521 of the second part 520 is completely filled by the width w of the waveguide a to the substrate reduction waveguide 560, And the impedance is adjusted by adjusting the width c of the dielectric.

For example, if the impedance of the substrate integrated waveguide 550 is 573?, And the impedance of the substrate reduction waveguide 560 is 295 ?, the impedance of the substrate-integrated waveguide 550 may be calculated using impedance information according to the dielectric width c calculated by Equations 1 to 4, impedance matching such as binomial impedance matching, and claw fence taper.

If the quarter-wave transformer is used in the simplest way, the width of the dielectric material c of the second part 520 is determined so as to have an impedance of 411 ?, and the length of the dielectric material may be 1/4?.

An example of the shape of Fig. 14 (a) may be a shape of a two-stage Chebyshev or binomial impedance matching structure. An example of the shape of Fig. 14 (b) is impedance matching through taper, Or the like.

In this impedance matching process, it is possible to arbitrarily adjust the size, required band and ripple characteristics required in the system.

Next, the structure of the fifth dielectric 621 constituting the fifth part 620 in the transition structure 600 according to the second embodiment of the present invention will be described in detail.

FIG. 16 is a conceptual diagram showing the structure of a second dielectric constituting the fifth part in the transition structure according to the second embodiment of the present invention. FIG.

The fifth dielectric 621 is formed longitudinally toward the substrate reduction waveguide 560 in the substrate integrated waveguide 550 as described above. The fifth dielectric 621 is divided into two sides closer to the substrate decreasing waveguide 560 so that the width of each of the fifth dielectric 621 and the fifth dielectric 621 is narrowed. That is, the fifth dielectric 621 is formed to be limited to both sides as it approaches the substrate reduction waveguide 560.

The fifth dielectric 621 may be formed in a structure in which the widths of the respective first and second dielectric bodies 621a and 621b are gradually narrowed step by step as shown in FIG. 16 (a). As shown in FIG. 16 (b) 621b may be formed to have a narrow width.

The fifth dielectric 621 may have a stepped structure in which only the portions of the fifth dielectric 621 are left from the substrate integrated waveguide 550 toward the substrate reduction waveguide 560 .

The fifth dielectric 621 is integrally formed in a fourth width from the substrate integrated waveguide 550 to the tenth point 831 located between the substrate integrated waveguide 550 and the substrate reduction waveguide 560 Then, from the tenth point 831, the a dielectric body 621a and the b-th dielectric body 621b are separated on both sides. The a-dielectric 621a and the b-th dielectric 621b are arranged on the both sides to the eleventh point 832 located between the tenth point 831 and the tenth point 831 and the substrate reduction waveguide 560, And a fourth width 832 formed on the both sides from the eleventh point 832 to the twelfth point 833 located between the eleventh point 832 and the substrate decreasing waveguide 560. [ May be formed to have a smaller sixth width. At this time, the first and second bipolar dielectrics 621a and 621b may be formed to have a reduced width at one side only.

The fifth dielectric 621 is formed in a tapered structure in which only both portions of the fifth dielectric 621 are left from the substrate integrated waveguide 550 toward the substrate reduction waveguide 560. In this case, As shown in FIG.

The fifth dielectric 621 is formed to have a constant width from the substrate integrated waveguide 550 to the thirteenth point 841 located between the substrate integrated waveguide 550 and the substrate reduction waveguide 560, Are separated from the 13th point 841 on both sides by a first dielectric 621a and a second b dielectric 621b. The a-dielectric 621a and the b-th dielectric 621b are then gradually increased from the thirteenth point 841 to the fourteenth point 842 located between the thirteenth point 841 and the substrate reduction waveguide 560 Can be formed in a structure in which the width is narrowed. At this time, the a-dielectric 621a and the b-b-type dielectric 621b may be formed to have a geometric width narrowing from the thirteenth point 841 to the fourteenth point 842. In this embodiment, It may be formed in a structure in which the width is narrowed. In this case, it is needless to say that the a-dielectric 621a and the b-b-type dielectric 621b may be formed to have a reduced width at only one side.

As in the first embodiment, the shape of the second embodiment is formed by the impedance matching structure, and the equations (3) and (4) can be modified as shown in the following equations (5) and (6), respectively.

Figure 112018026000629-pat00005

Figure 112018026000629-pat00006

The transition structure described with reference to Figs. 7 to 17 can be flexibly designed to be suitable for the band, waveguide size, and the like required by the system. The transition structure described above can be applied to a millimeter-wave ultraminiature radar transceiver for a guided weapon, a millimeter wave system, and the like.

18 is a diagram illustrating an example of a power amplifier using the waveguide power combiner proposed in the present invention.

The power amplifier 900 of FIG. 18 is an embodiment of a high power semiconductor power amplifier (SSPA), and the waveguide power combiner proposed in the present invention can be applied to a power amplifier such as SSPA.

1 to 18, an embodiment of the present invention has been described. Best Mode for Carrying Out the Invention Hereinafter, preferred forms of the present invention that can be inferred from the above embodiment will be described.

First, the power coupling apparatus proposed by the present invention will be described.

A power coupling device according to a preferred embodiment of the present invention distributes power in a millimeter wave system, and includes a power splitter and a transition structure. The power coupling apparatus according to the preferred embodiment of the present invention includes a first waveguide power combiner 100 of FIG. 1, a second waveguide power combiner 200 of FIG. 2, a third waveguide power combiner 300 of FIG. 3, Waveguide power combiner 400 of FIG.

The power distributor divides the H plane or E plane of the waveguide and distributes the power.

The transition structure is a structure for transmitting a signal in a millimeter wave system and includes a first part, a second part and a third part.

The first part is formed between the transmission line and the first waveguide, and includes a first conductor and a first dielectric. The first conductor is formed on a part of the rim of the first part, and the first dielectric is laminated on the entire inner space formed by the first conductor. The transmission line is a concept corresponding to the microstrip line 540 in FIG. 7, and the first waveguide corresponds to the substrate integrated waveguide 550 in FIG.

The first conductor may include a fourth conductor formed on a part of the upper side of the first part and a fifth conductor formed on the entire lower surface of the first part. At this time, the width of the fourth conductor can be expanded on both sides as the first waveguide approaches the transmission line. It is also possible that at least one via hole is formed at both ends of the fourth conductor.

The second part is formed between the first waveguide and the second waveguide, and includes a second conductor and a second dielectric. The second conductor is formed on the entire circumference of the second part and the second dielectric is laminated on a part of the inner space surrounded by the second conductor. The second waveguide is a concept corresponding to the substrate reduction waveguide 560 of FIG.

The second dielectric may be formed to have a narrower width as the second waveguide moves in the first waveguide. These second dielectrics may be formed to have a narrow width on both sides or to have a narrow width on one side. The second dielectric is located at the center of the second part and the second dielectric is located at both ends of the second part when the width is narrowed at one side.

The second dielectric may be formed so as to have a narrow width in a stepped structure on both sides as shown in FIG. 14 (a). In detail, the second dielectric is formed from the first waveguide to a point A, which is located between the first waveguide and the second waveguide, and the second dielectric is formed from the point A to the point A between the point A and the second waveguide. A second width smaller than the first width to the point B and a third width smaller than the second width from the point B to the point C located between the point B and the second waveguide.

The second dielectric may be formed to have a narrow width on both sides of the slope as shown in FIG. 14 (b). In detail, the second dielectric is formed at a fourth width from the first waveguide to the Dth point located between the first waveguide and the second waveguide, and the second dielectric is disposed between the Dth point and the second waveguide. The width value up to the point E may be formed to decrease arithmetically or exponentially.

The second dielectric may be formed to have a narrow width from one side to a stepped structure as shown in Fig. 16 (a). In detail, the second dielectric is formed in a fifth width from the first waveguide to the Fth point located between the first waveguide and the second waveguide, and the second dielectric is formed between the Fth point and the second waveguide, And a sixth width smaller than the fifth width on both sides up to the G point and extending from the G point to the H point located between the G point and the second waveguide, As shown in FIG.

The second dielectric may be formed to have a narrow width from one side to an inclined plane structure as shown in FIG. 16 (b). In detail, the second dielectric is formed to have an eighth width from the first waveguide to an I-th point located between the first waveguide and the second waveguide, and the second dielectric is disposed between the first waveguide and the second waveguide, The width values at both sides up to point J can be formed to decrease arithmetically or exponentially.

The third part is formed between the second waveguide and the third waveguide, and includes a third conductor. And the third conductor is formed on the entire circumference of the third part. The third waveguide corresponds to the waveguide 570 of FIG.

The gap between the upper end surface and the lower end surface of the third conductor can be expanded as the third waveguide moves in the direction in which the third waveguide is located. At this time, the lower end surface of the third conductor may be formed to be lowered in a stepped shape or a ramped shape as the third waveguide moves in the direction in which the third waveguide is located.

Meanwhile, the first waveguide may be formed as a waveguide filled with a dielectric, and the second waveguide and the third waveguide may be formed as a hollow waveguide.

The power coupling device may further include a thin film resistor.

The thin film resistor is in the form of a thin film and is attached to one side of the third waveguide.

Next, a power amplifying system including a power coupling device will be described.

The power amplifier system proposed by the present invention includes a power coupling device and a power amplifier. Such a power amplification system can be implemented as a solid state power amplifier (SSPA). The power amplification system corresponds to the power amplifier 900 of FIG.

Since the power coupling apparatus has been described above, detailed description thereof will be omitted here.

The power amplifying part performs a function of amplifying the power output by the power combining device.

It is to be understood that the present invention is not limited to these embodiments, and all elements constituting the embodiment of the present invention described above are described as being combined or operated in one operation. That is, within the scope of the present invention, all of the components may be selectively coupled to one or more of them. In addition, although all of the components may be implemented as one independent hardware, some or all of the components may be selectively combined to perform a part or all of the functions in one or a plurality of hardware. As shown in FIG. In addition, such a computer program may be stored in a computer readable medium such as a USB memory, a CD disk, a flash memory, etc., and read and executed by a computer to implement an embodiment of the present invention. As the recording medium of the computer program, a magnetic recording medium, an optical recording medium, or the like can be included.

Furthermore, all terms including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined in the Detailed Description. Commonly used terms, such as predefined terms, should be interpreted to be consistent with the contextual meanings of the related art, and are not to be construed as ideal or overly formal, unless expressly defined to the contrary.

It will be apparent to those skilled in the art that various modifications, substitutions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. will be. Therefore, the embodiments disclosed in the present invention and the accompanying drawings are intended to illustrate and not to limit the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

Claims (14)

  1. Distributing power in a millimeter wave system,
    A power divider dividing an H plane or an E plane of the waveguide to distribute power; And
    A first part formed between a transmission line and a first waveguide, the first part including a first conductor formed on a part of a rim surface and a first dielectric laminated on an entire inner space formed by the first conductor; A second part formed between the first waveguide and the second waveguide, the second part including a second conductor formed on the entire circumference of the first waveguide and a second dielectric layer formed on a part of the inner space surrounded by the second conductor; And a third part formed between the second waveguide and the third waveguide, the third part including a third conductor formed on the entire edge surface,
    The power coupling device comprising:
  2. The method according to claim 1,
    The thin film resistor is formed in a thin film shape,
    Further comprising: a power supply coupled to the power supply.
  3. The method according to claim 1,
    Wherein the second dielectric is formed to have a smaller width as the second waveguide moves from the first waveguide toward the second waveguide.
  4. The method of claim 3,
    Wherein the second dielectric is formed to have a narrow width at both sides or to have a narrow width at one side.
  5. The method of claim 3,
    The second dielectric is formed to have a first width from the first waveguide to a point A that is located between the first waveguide and the second waveguide and a second dielectric is formed between the point A and the second waveguide And a third width smaller than the second width from a point B to a point C located between the point B and the second waveguide, And the power coupling device comprises:
  6. The method of claim 3,
    The second dielectric is formed at a fourth width from the first waveguide to the Dth point located between the first waveguide and the second waveguide and between the Dth point and the second waveguide, And the width value is formed so as to be arithmetically or exponentially decreasing to the point E where it is located.
  7. The method of claim 3,
    Wherein the second dielectric is formed to have a fifth width from the first waveguide to an Fth point located between the first waveguide and the second waveguide and between the Fth point and the second waveguide And a second waveguide extending from the second waveguide to the second waveguide, the second waveguide being formed on the both sides with a sixth width smaller than 1/2 of the fifth width, And a seventh width smaller than the sixth width.
  8. The method of claim 3,
    Wherein the second dielectric is formed to have an eighth width from the first waveguide to an I point located between the first waveguide and the second waveguide and the second dielectric is disposed between the I point and the second waveguide And the width value is formed to decrease arithmetically or exponentially in both sides up to the Jth point where the first and second J-points are located.
  9. The method according to claim 1,
    Wherein a gap between an upper end surface and a lower end surface of the third conductor extends as the third waveguide moves in a direction in which the third waveguide is located.
  10. 10. The method of claim 9,
    Wherein the lower end surface of the third conductor is formed to be lowered in a stepped shape or a ramped shape as the third waveguide moves in a direction in which the third waveguide is located.
  11. The method according to claim 1,
    Wherein the first conductor comprises:
    A fourth conductor formed on a part of an upper surface of the first part; And
    A fifth conductor formed on the entire lower surface of the first part,
    The power coupling device comprising:
  12. 12. The method of claim 11,
    And the width of the fourth conductor extends on both sides of the transmission line as the first waveguide approaches the transmission line.
  13. 12. The method of claim 11,
    And at least one via hole is formed at both ends of the fourth conductor.
  14. The method according to claim 1,
    Wherein the first waveguide is formed as a waveguide whose inside is filled with a dielectric,
    Wherein the second waveguide and the third waveguide are formed as waveguides having an inner space.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005539461A (en) 2002-09-20 2005-12-22 イーエイーディーエス、ドイチュラント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングEads Deutschland Gmbh Device for bonding between microstrip line and waveguide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005539461A (en) 2002-09-20 2005-12-22 イーエイーディーエス、ドイチュラント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングEads Deutschland Gmbh Device for bonding between microstrip line and waveguide

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