KR101857892B1 - 광전 변환 소자 및 촬상 소자 - Google Patents
광전 변환 소자 및 촬상 소자 Download PDFInfo
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- KR101857892B1 KR101857892B1 KR1020167006394A KR20167006394A KR101857892B1 KR 101857892 B1 KR101857892 B1 KR 101857892B1 KR 1020167006394 A KR1020167006394 A KR 1020167006394A KR 20167006394 A KR20167006394 A KR 20167006394A KR 101857892 B1 KR101857892 B1 KR 101857892B1
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- Prior art keywords
- layer
- photoelectric conversion
- compound
- sec
- fullerene
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 177
- 238000003384 imaging method Methods 0.000 title claims description 61
- 239000010410 layer Substances 0.000 claims abstract description 327
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 85
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 150000001875 compounds Chemical class 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000012044 organic layer Substances 0.000 claims abstract description 35
- 229910003472 fullerene Inorganic materials 0.000 claims abstract description 27
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 29
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- 229940126214 compound 3 Drugs 0.000 claims description 8
- 229940125898 compound 5 Drugs 0.000 claims description 8
- 238000009825 accumulation Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 description 92
- 230000000903 blocking effect Effects 0.000 description 59
- 239000000463 material Substances 0.000 description 51
- 238000000151 deposition Methods 0.000 description 45
- 239000010408 film Substances 0.000 description 44
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- 239000000975 dye Substances 0.000 description 40
- 229940125904 compound 1 Drugs 0.000 description 38
- 230000000052 comparative effect Effects 0.000 description 34
- -1 tin oxide (SnO 2 ) Chemical class 0.000 description 27
- 239000010409 thin film Substances 0.000 description 22
- 125000001424 substituent group Chemical group 0.000 description 21
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- 125000003118 aryl group Chemical group 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 16
- 125000000623 heterocyclic group Chemical group 0.000 description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 14
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- 239000002184 metal Substances 0.000 description 14
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- 230000035945 sensitivity Effects 0.000 description 10
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- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 6
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
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- 239000011147 inorganic material Substances 0.000 description 6
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
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- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthene Chemical class C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 5
- QNXSIUBBGPHDDE-UHFFFAOYSA-N indan-1-one Chemical class C1=CC=C2C(=O)CCC2=C1 QNXSIUBBGPHDDE-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
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- 239000002245 particle Substances 0.000 description 5
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
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- 239000011787 zinc oxide Substances 0.000 description 5
- ADHAJDDBRUOZHJ-UHFFFAOYSA-N 1-benzothiophen-3-one Chemical compound C1=CC=C2C(=O)CSC2=C1 ADHAJDDBRUOZHJ-UHFFFAOYSA-N 0.000 description 4
- RVBUGGBMJDPOST-UHFFFAOYSA-N 2-thiobarbituric acid Chemical compound O=C1CC(=O)NC(=S)N1 RVBUGGBMJDPOST-UHFFFAOYSA-N 0.000 description 4
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 239000004305 biphenyl Substances 0.000 description 4
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- 239000004020 conductor Substances 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 125000006267 biphenyl group Chemical group 0.000 description 3
- 150000001716 carbazoles Chemical class 0.000 description 3
- SKOLWUPSYHWYAM-UHFFFAOYSA-N carbonodithioic O,S-acid Chemical class SC(S)=O SKOLWUPSYHWYAM-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
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- 230000004298 light response Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- DNTVKOMHCDKATN-UHFFFAOYSA-N pyrazolidine-3,5-dione Chemical compound O=C1CC(=O)NN1 DNTVKOMHCDKATN-UHFFFAOYSA-N 0.000 description 3
- 150000003219 pyrazolines Chemical class 0.000 description 3
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 3
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- 238000003860 storage Methods 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
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- 150000003852 triazoles Chemical group 0.000 description 3
- ZOBPZXTWZATXDG-UHFFFAOYSA-N 1,3-thiazolidine-2,4-dione Chemical compound O=C1CSC(=O)N1 ZOBPZXTWZATXDG-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- GCSVNNODDIEGEX-UHFFFAOYSA-N 2-sulfanylidene-1,3-oxazolidin-4-one Chemical compound O=C1COC(=S)N1 GCSVNNODDIEGEX-UHFFFAOYSA-N 0.000 description 2
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 description 2
- XVTQSYKCADSUHN-UHFFFAOYSA-N 3-methyl-2,3-dihydroinden-1-one Chemical compound C1=CC=C2C(C)CC(=O)C2=C1 XVTQSYKCADSUHN-UHFFFAOYSA-N 0.000 description 2
- ONKCIMOQGCARHN-UHFFFAOYSA-N 3-methyl-n-[4-[4-(3-methylanilino)phenyl]phenyl]aniline Chemical compound CC1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(NC=3C=C(C)C=CC=3)=CC=2)=C1 ONKCIMOQGCARHN-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
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- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- HNYOPLTXPVRDBG-UHFFFAOYSA-N barbituric acid Chemical class O=C1CC(=O)NC(=O)N1 HNYOPLTXPVRDBG-UHFFFAOYSA-N 0.000 description 2
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- 150000004696 coordination complex Chemical class 0.000 description 2
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- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 2
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
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- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 2
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- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 2
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- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- LXCYNALXWGQUIK-UHFFFAOYSA-N 1,1-dioxo-1-benzothiophen-3-one Chemical compound C1=CC=C2C(=O)CS(=O)(=O)C2=C1 LXCYNALXWGQUIK-UHFFFAOYSA-N 0.000 description 1
- UGUHFDPGDQDVGX-UHFFFAOYSA-N 1,2,3-thiadiazole Chemical group C1=CSN=N1 UGUHFDPGDQDVGX-UHFFFAOYSA-N 0.000 description 1
- OCKYCCVSWVDVAL-UHFFFAOYSA-N 1,2-dimethylpyrazolidine-3,5-dione Chemical compound CN1N(C)C(=O)CC1=O OCKYCCVSWVDVAL-UHFFFAOYSA-N 0.000 description 1
- XDPKQGKEOCYMQC-UHFFFAOYSA-N 1,2-diphenylpyrazolidine-3,5-dione Chemical compound O=C1CC(=O)N(C=2C=CC=CC=2)N1C1=CC=CC=C1 XDPKQGKEOCYMQC-UHFFFAOYSA-N 0.000 description 1
- JGRCHNVLXORPNM-UHFFFAOYSA-N 1,2-oxazol-4-one Chemical class O=C1CON=C1 JGRCHNVLXORPNM-UHFFFAOYSA-N 0.000 description 1
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- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical group N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- PTXVSDKCUJCCLC-UHFFFAOYSA-N 1-hydroxyindole Chemical class C1=CC=C2N(O)C=CC2=C1 PTXVSDKCUJCCLC-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- TZMSYXZUNZXBOL-UHFFFAOYSA-N 10H-phenoxazine Chemical compound C1=CC=C2NC3=CC=CC=C3OC2=C1 TZMSYXZUNZXBOL-UHFFFAOYSA-N 0.000 description 1
- UXGVMFHEKMGWMA-UHFFFAOYSA-N 2-benzofuran Chemical group C1=CC=CC2=COC=C21 UXGVMFHEKMGWMA-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
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- 125000003944 tolyl group Chemical group 0.000 description 1
- 125000005259 triarylamine group Chemical class 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14667—Colour imagers
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- H01L27/307—
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- H01L51/0046—
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- H01L51/0053—
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- H01L51/006—
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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- Solid State Image Pick-Up Elements (AREA)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013204422 | 2013-09-30 | ||
| JPJP-P-2013-204422 | 2013-09-30 | ||
| PCT/JP2014/073531 WO2015045806A1 (ja) | 2013-09-30 | 2014-09-05 | 光電変換素子および撮像素子 |
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| Publication Number | Publication Date |
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| KR20160043018A KR20160043018A (ko) | 2016-04-20 |
| KR101857892B1 true KR101857892B1 (ko) | 2018-05-14 |
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| JP (1) | JP6059697B2 (ja) |
| KR (1) | KR101857892B1 (ja) |
| TW (1) | TWI636599B (ja) |
| WO (1) | WO2015045806A1 (ja) |
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| JP7014601B2 (ja) * | 2015-05-29 | 2022-02-01 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および固体撮像装置 |
| JP6769435B2 (ja) * | 2015-06-25 | 2020-10-14 | ソニー株式会社 | 光電変換素子、撮像素子、積層型撮像素子及び撮像装置 |
| KR102491494B1 (ko) | 2015-09-25 | 2023-01-20 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서 |
| KR102529631B1 (ko) | 2015-11-30 | 2023-05-04 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
| KR102557864B1 (ko) | 2016-04-06 | 2023-07-19 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
| US10236461B2 (en) | 2016-05-20 | 2019-03-19 | Samsung Electronics Co., Ltd. | Organic photoelectronic device and image sensor |
| KR102605375B1 (ko) | 2016-06-29 | 2023-11-22 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
| KR102589215B1 (ko) | 2016-08-29 | 2023-10-12 | 삼성전자주식회사 | 유기 광전 소자, 이미지 센서 및 전자 장치 |
| JP7086573B2 (ja) * | 2017-11-17 | 2022-06-20 | キヤノン株式会社 | 光電変換素子、及びこれを用いた光エリアセンサ、撮像素子、撮像装置 |
| CN110301052B (zh) | 2017-02-07 | 2023-12-12 | 佳能株式会社 | 光电转换元件、和使用其的光学区域传感器、图像拾取元件和图像拾取设备 |
| WO2018147202A1 (ja) * | 2017-02-07 | 2018-08-16 | キヤノン株式会社 | 光電変換素子、及びこれを用いた光エリアセンサ、撮像素子、撮像装置 |
| JP7039285B2 (ja) * | 2017-02-07 | 2022-03-22 | キヤノン株式会社 | 光電変換素子、及びこれを用いた光エリアセンサ、撮像素子、撮像装置 |
| US11145822B2 (en) | 2017-10-20 | 2021-10-12 | Samsung Electronics Co., Ltd. | Compound and photoelectric device, image sensor, and electronic device including the same |
| JP6853767B2 (ja) | 2017-11-13 | 2021-03-31 | 株式会社東芝 | 放射線検出器 |
| WO2023218933A1 (ja) * | 2022-05-12 | 2023-11-16 | 富士フイルム株式会社 | 光電変換素子、撮像素子、光センサ、化合物 |
| WO2024048488A1 (ja) * | 2022-08-31 | 2024-03-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
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|---|---|---|---|---|
| JP2012094660A (ja) | 2010-10-26 | 2012-05-17 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2012165023A (ja) * | 2012-05-21 | 2012-08-30 | Fujifilm Corp | 光電変換素子の製造方法及び固体撮像素子 |
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| JP2009252768A (ja) * | 2008-04-01 | 2009-10-29 | Fuji Electric Holdings Co Ltd | 有機太陽電池、およびその製造方法 |
| KR101675596B1 (ko) * | 2009-06-03 | 2016-11-11 | 후지필름 가부시키가이샤 | 광전 변환 소자 및 촬상 소자 |
| JP5264865B2 (ja) * | 2010-03-31 | 2013-08-14 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
| WO2011138888A1 (ja) * | 2010-05-07 | 2011-11-10 | 住友化学株式会社 | 有機光電変換素子 |
| WO2011138889A1 (ja) * | 2010-05-07 | 2011-11-10 | 住友化学株式会社 | 有機光電変換素子 |
| JP2012077064A (ja) * | 2010-09-08 | 2012-04-19 | Fujifilm Corp | 光電変換材料、該材料を含む膜、光電変換素子、光電変換素子の製造方法、光電変換素子の使用方法、光センサ、撮像素子 |
| JP2014003094A (ja) * | 2012-06-15 | 2014-01-09 | Mitsubishi Chemicals Corp | 光電変換素子、太陽電池及び太陽電池モジュール |
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- 2014-09-05 JP JP2014181231A patent/JP6059697B2/ja active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2012094660A (ja) | 2010-10-26 | 2012-05-17 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2012165023A (ja) * | 2012-05-21 | 2012-08-30 | Fujifilm Corp | 光電変換素子の製造方法及び固体撮像素子 |
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| Publication number | Publication date |
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| JP2015092546A (ja) | 2015-05-14 |
| JP6059697B2 (ja) | 2017-01-11 |
| WO2015045806A1 (ja) | 2015-04-02 |
| TWI636599B (zh) | 2018-09-21 |
| KR20160043018A (ko) | 2016-04-20 |
| TW201513421A (zh) | 2015-04-01 |
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