KR101786641B1 - 광산 발생 기능 및 기본 용해도 향상 기능이 있는 반복 단위를 포함하는 폴리머 및 이와 관련된 포토 레지스트 조성물과 전자장치 형성 방법 - Google Patents

광산 발생 기능 및 기본 용해도 향상 기능이 있는 반복 단위를 포함하는 폴리머 및 이와 관련된 포토 레지스트 조성물과 전자장치 형성 방법 Download PDF

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KR101786641B1
KR101786641B1 KR1020150140861A KR20150140861A KR101786641B1 KR 101786641 B1 KR101786641 B1 KR 101786641B1 KR 1020150140861 A KR1020150140861 A KR 1020150140861A KR 20150140861 A KR20150140861 A KR 20150140861A KR 101786641 B1 KR101786641 B1 KR 101786641B1
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polymer
independently
generating
repeat units
solubility
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KR20160042776A (ko
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제이. 라비움 폴
자인 비풀
더블유. 새커리 제임스
에프. 카메론 제임스
엠. 콜리 수잔
엠. 곽 에이미
에이. 발레리 데이비드
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롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
    • C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020150140861A 2014-10-10 2015-10-07 광산 발생 기능 및 기본 용해도 향상 기능이 있는 반복 단위를 포함하는 폴리머 및 이와 관련된 포토 레지스트 조성물과 전자장치 형성 방법 Active KR101786641B1 (ko)

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US201462062347P 2014-10-10 2014-10-10
US62/062,347 2014-10-10

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KR20160042776A KR20160042776A (ko) 2016-04-20
KR101786641B1 true KR101786641B1 (ko) 2017-10-19

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US (1) US9606434B2 (https=)
JP (1) JP6111306B2 (https=)
KR (1) KR101786641B1 (https=)
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US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
JP6543222B2 (ja) * 2016-06-03 2019-07-10 株式会社三共 遊技機
JP6846127B2 (ja) * 2016-06-28 2021-03-24 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
WO2018042810A1 (ja) * 2016-08-31 2018-03-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2018194123A1 (ja) * 2017-04-20 2018-10-25 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP7407576B2 (ja) * 2019-12-03 2024-01-04 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
CN111138410A (zh) * 2019-12-28 2020-05-12 上海博栋化学科技有限公司 含金刚烷结构的光刻胶产酸树脂单体及其合成方法
JP7719654B2 (ja) * 2020-08-05 2025-08-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7719653B2 (ja) * 2020-08-05 2025-08-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
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TWI589596B (zh) 2017-07-01
CN105504118A (zh) 2016-04-20
TW201613985A (en) 2016-04-16
US20160102158A1 (en) 2016-04-14
JP6111306B2 (ja) 2017-04-05
JP2016104849A (ja) 2016-06-09
US9606434B2 (en) 2017-03-28
KR20160042776A (ko) 2016-04-20
CN105504118B (zh) 2019-04-30

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