KR101782384B1 - Microwave plasma processing apparatus - Google Patents

Microwave plasma processing apparatus Download PDF

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Publication number
KR101782384B1
KR101782384B1 KR1020110057331A KR20110057331A KR101782384B1 KR 101782384 B1 KR101782384 B1 KR 101782384B1 KR 1020110057331 A KR1020110057331 A KR 1020110057331A KR 20110057331 A KR20110057331 A KR 20110057331A KR 101782384 B1 KR101782384 B1 KR 101782384B1
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KR
South Korea
Prior art keywords
antenna
chamber
upper plate
support ring
slots
Prior art date
Application number
KR1020110057331A
Other languages
Korean (ko)
Other versions
KR20120003371A (en
Inventor
최진혁
한상철
기종일
이영동
이근석
오승훈
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR20100063961 priority Critical
Priority to KR1020100063961 priority
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority claimed from US13/174,938 external-priority patent/US8980047B2/en
Publication of KR20120003371A publication Critical patent/KR20120003371A/en
Application granted granted Critical
Publication of KR101782384B1 publication Critical patent/KR101782384B1/en

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Abstract

The present invention provides a microwave plasma processing apparatus capable of maintaining electrical contact while the antenna is freely thermally expanded and improving the contact of the insulator in contact with the upper and lower sides of the antenna to obtain a stable plasma and to maintain the insulating film quality of the wafer processed in the plasma environment at a high level do.
The microwave plasma processing apparatus includes a chamber in which a plasma process is performed, an upper plate provided at an upper portion of the chamber, an antenna provided at a lower portion of the upper plate, an antenna for generating plasma in the chamber, An antenna support ring provided below the antenna for fixing the antenna to the upper plate, and an antenna supporting ring provided below the antenna for supporting the antenna, And a metal gasket attached to the support ring.

Description

[0001] MICROWAVE PLASMA PROCESSING APPARATUS [0002]

Disclosed is an apparatus for generating an insulating film on a semiconductor wafer by generating a plasma using a microwave.

In an apparatus for generating a plasma using a microwave and generating an insulating film on a semiconductor wafer using the plasma, an electric current must be transmitted to the antenna in order to generate plasma.

The antenna is provided between the upper plate and the lower ring, and the lower ring is strongly pressed by the bolts.

When the current is transmitted to the antenna, the antenna is made of a conductor, but the antenna causes a heat due to the conductor resistance.

If the heat of the antenna goes up to several hundred degrees, the antenna will be increased by 1 to 2 mm in the radial direction when it is circular.

In this case, the antenna does not extend in the radial direction due to the bolt passing through the antenna, so that the antenna swells up.

In the upper part, the thermal expansion of the antenna, which has been maintained only by the bolt fastening force but has already started to swell, can not be pressed by force.

Over time, the heat is getting worse and the shape of the antenna changes, affecting the process. In some cases, arcing may occur in the slot of the antenna.

In order to prevent this, lowering the thickness of the upper insulator and lowering the temperature of the cooling water causes the plasma generation efficiency to be lowered. When the temperature is lower than the room temperature, a condensation phenomenon occurs around the upper plate.

When the thermal expansion due to the heat generation of the antenna becomes more severe, the oxidation occurs rapidly on the surface of the antenna.

In order to prevent this, the gold plating layer may be peeled off even if gold plating is performed.

One aspect of the present invention provides a microwave plasma processing apparatus capable of maintaining electrical contact while the antenna is thermally expanded freely.

There is also provided a microwave plasma processing apparatus capable of obtaining a stable plasma by improving the contact of insulators in contact with the upper and lower sides of the antenna to maintain the insulating film quality of a wafer processed in a plasma environment at a high level.

According to an aspect of the present invention, there is provided a microwave plasma processing apparatus comprising: a chamber in which plasma processing is performed; An upper plate provided at an upper portion of the chamber; An antenna disposed under the upper plate for generating plasma in the chamber; An upper insulator provided between the upper plate and the antenna, the upper insulator surrounding the antenna at an upper portion; A lower insulator provided below the antenna, the lower insulator surrounding the antenna; An antenna support ring provided below the antenna for fixing the antenna to the upper plate; And a metal gasket attached to the antenna support ring.

The antenna may be a flat antenna.

The antenna may have a plurality of slots having various shapes.

The antenna may have a groove formed along an outer circumferential surface thereof.

The antenna support ring may have a protrusion along the outer circumferential surface thereof.

The metal gasket pushes up the antenna so that the antenna and the upper plate are kept in contact with each other.

The metal gasket may maintain electrical contact between the antenna and the antenna support ring.

And a susceptor for fixing a semiconductor wafer to be plasma-processed inside the chamber is provided in the chamber, and a heater for heating the semiconductor wafer is embedded in the susceptor or an electrode for applying an RF bias to the semiconductor wafer is embedded .

According to the embodiments of the present invention, thermal expansion of the antenna can be freely performed through the protrusion formed along the outer circumferential surface of the antenna support ring and the groove formed along the outer circumferential surface of the antenna.

Further, the electrical contact can be maintained even when the antenna is thermally expanded through the metal gasket.

In addition, through the above-described structure, the antenna and the upper and lower insulators can be closely contacted to maintain a more stable plasma state, and a stable plasma state can be rapidly reached.

1 is a cross-sectional view schematically showing a microwave plasma processing apparatus according to an embodiment of the present invention;
FIG. 2 is a perspective view schematically showing a main part of a microwave plasma processing apparatus according to an embodiment of the present invention; FIG.
3 is an exploded perspective view of a main part of a microwave plasma processing apparatus according to an embodiment of the present invention;
4 is a cross-sectional view schematically showing a coupling relationship of a main part of a microwave plasma processing apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic view schematically showing the overall configuration of a microwave plasma processing apparatus according to an embodiment of the present invention; FIG.
FIG. 6 is a schematic view schematically showing the overall configuration of a microwave plasma processing apparatus according to a modification of the present invention; FIG.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing a microwave plasma processing apparatus 1 according to an embodiment of the present invention.

1 to 4, the microwave plasma processing apparatus 1 includes a chamber 10 in which a plasma process is performed, an upper plate 20 provided at an upper portion of the chamber 10, an upper plate 20 An upper insulator 40 provided between the upper plate 20 and the antenna 30 to surround the antenna 30 and an upper insulator 40 disposed between the upper plate 20 and the antenna 30 to generate plasma in the chamber 10, A lower insulator 50 provided below the antenna 30 for covering the antenna 30 from below and an antenna support ring 60 provided below the antenna 30 for fixing the antenna 30 to the upper plate 20 And a metal gasket 70 attached to the antenna support ring 60.

As shown in FIG. 1, the microwave plasma processing apparatus 1 is provided with a chamber 10 in which a plasma process is performed.

A semiconductor wafer W for plasma processing is inserted into the chamber 10 and a gauge 11 for measuring the pressure inside the chamber 10 during the plasma processing is installed in the chamber 10 And the gas is introduced into the chamber 10 through the gas nozzle 13 provided in the chamber 10.

In the chamber 10, a current is transmitted along the surface of the antenna 30 and the gas introduced into the chamber 10 through the lower insulator 50 provided under the antenna 30 is converted into plasma, W).

As shown in FIG. 1, the upper plate 20 is provided above the chamber 10 and can also serve as a cooling plate.

A channel (not shown) through which cooling water flows may be provided in the upper plate 20.

As shown in FIG. 1, the antenna 30 may be formed of a conductor, and is disposed under the upper plate 20, and generates plasma in the chamber 10.

The antenna 30 can use a planar antenna to generate a uniform density plasma over a large area.

As shown in FIG. 3, the antenna 30 is formed with a plurality of slots 31 having various shapes.

Microwaves are radiated into the chamber 10 through a plurality of slots 31 formed in the antenna 30.

In order to allow the microwave to be radiated into the chamber 10, a current is passed through the antenna 30 to cause the antenna 30 to generate heat.

The antenna 30 can be formed as a conductor, but when the output is applied, the conductor 30 can not prevent the antenna 30 from generating heat due to the resistance.

The antenna 30 thermally expands due to heat generation. Especially, when the heat is heated up to several hundred degrees, the antenna 30 thermally expands in the radial direction indicated by the arrow as shown in FIG. 4 when the antenna 30 is formed in a circular shape.

At this time, since the antenna 30 penetrates through the bolt and is in contact with the upper plate 20, the antenna 30 does not extend in the radial direction due to the fastened bolt and swells upward.

As a result, the shape of the antenna 30 is changed over time, such that the antenna 30 is twisted, thereby affecting the process. In a severe case, arcing may occur in the slot 31 of the antenna 30.

 In order to prevent the problem of thermal expansion due to the heat generation of the antenna 30, according to an embodiment of the present invention, as shown in FIG. 3, the antenna 30 is formed with the grooves 33 along the outer circumferential surface.

A projecting portion 61 formed along the outer circumferential surface of the antenna support ring 60 to be described below is fitted and joined to the elongated groove 33 formed along the outer peripheral surface of the antenna 30. [

A fastening hole (63) is formed in the projection (61) formed along the outer peripheral surface of the antenna support ring (60).

The bolts are inserted through the fastening holes 63 formed in the antenna support ring 60 so that the antenna 30 is fixed to the upper plate 20. [

2, the elongated groove 33 formed along the outer circumferential surface of the antenna 30 is formed to be larger than the protruding portion 61 formed along the outer circumferential surface of the antenna support ring 60, and the elongated groove 33 and the protruding portion 61 are formed, A clearance space may be formed.

The antenna 30 can be thermally expanded freely in the radial direction without being disturbed by the bolt even if the antenna 30 is thermally expanded due to heat generation through the clearance space.

Therefore, even if the antenna 30 is thermally expanded due to heat generation, it can be freely thermally expanded in the radial direction without being deformed such as twisting, so that it does not affect the process and can maintain the contact with the upper plate 20 as it is.

As shown in FIGS. 1 to 3, insulators 40 and 50 are provided on upper and lower portions of the antenna 30.

The upper insulator 40 provided between the upper plate 20 and the antenna 30 and wrapping the antenna 30 from above is used for inserting the antenna 30 in contact with the upper plate 20, Can be suppressed.

The lower insulator 50 provided under the antenna 30 and surrounding the antenna 30 from below can insulate the antenna 30 like the upper insulator 40 and is formed in a dome structure .

1 to 4, an antenna support ring 60 is provided under the antenna 30 to allow the antenna 30 to be fixed to the upper plate 20. As shown in FIGS.

As described above, the antenna support ring 60 is provided with the protruding portion 61 along the outer circumferential surface thereof, and the protruding portion 61 is formed with the fastening hole 63 for fastening the bolt.

The protrusion 61 formed along the outer circumferential surface of the antenna support ring 60 is engaged with the elongated groove 33 formed along the outer circumferential surface of the antenna 30 and the bolt is fastened through the fastening hole 63 formed in the protrusion 61 So that the antenna 30 is fixed to the upper plate 20.

As shown in FIGS. 3 and 4, a plurality of metal gaskets 70 acting as springs can be attached to the upper part of the antenna support ring 60.

The metal gasket 70 is attached to the upper portion of the antenna support ring 60 and pushes up the antenna 30 like a spring so that the antenna 30 and the upper plate 20 are held in constant contact with each other.

Even if an output is applied to the antenna 30 and heat generation starts, the antenna 30 can slide in the radial direction naturally while sliding in correspondence with the frictional force of the metal gasket 70 serving as a spring.

A space is formed between the elongated groove 33 formed along the outer circumferential surface of the antenna and the protruding portion 61 formed along the outer circumferential surface of the antenna support ring 60 so that the antenna 30 can expand in the radial direction by thermal expansion. The outer diameter of the antenna 30 may be formed to be spaced apart from a predetermined distance or more.

Also, the metal gasket 70 can maintain electrical contact between the antenna 30 and the antenna support ring 60.

5, a semiconductor wafer W for plasma processing is inserted into the chamber 10 of the microwave plasma processing apparatus 1, and the semiconductor wafer W is placed on the upper portion of the susceptor 80 .

A support table 91 for supporting the susceptor 80 and a fixing unit 90 for fixing the support table 91 may be installed below the susceptor 80.

A pressure regulating valve 93 for automatically regulating the pressure so that the pressure measured by the gauge 11 installed in the chamber 10 is kept constant may be provided in the lower portion of the fixing portion 90, A turbo pump 95 for discharging the gas introduced through the gas nozzle 13 provided in the chamber 10 may be installed.

The susceptor 80 is provided with a heater 81 for heating the semiconductor wafer W in order to improve the characteristics of the semiconductor wafer W during plasma processing of the semiconductor wafer W, Frequency, radio frequency) bias can be incorporated.

Although the heater 81 and the electrode 83 are shown together in the figure, only one heater 81 or electrode 83 can be incorporated.

The heater 81 and the electrode 83 embedded in the susceptor 80 can be connected to the external AC current supply module 87 or the RF module 89 through the internal conductor 85.

The heater 81 receives the alternating current from the alternating current supply module 87 connected through the conductor 85 and heats the semiconductor wafer W. The alternating current supplying module 87 supplies the alternating current to the heater 81 87 may be divided into two to separately adjust the two regions of the susceptor 80.

The electrode 83 receives RF bias from the RF module 89 connected through the conductor 85 and applies an RF bias to the semiconductor wafer W. The RF module 89 for applying RF bias to the electrode 83 May include a RF generator (not shown) for delivering RF power, an RF cable (not shown), and an RF matching network (not shown).

If an RF bias is applied to the semiconductor wafer W through the electrode 83, the RF noise component or the leakage current may flow toward the heater 81 due to the internal structure of the susceptor 80, The module 89 may include an RF filter (not shown).

Fig. 6 shows a modification for discharging the gas inside the chamber of the microwave plasma processing apparatus.

6, the microwave plasma processing apparatus 1 controls the pressure inside the chamber 10 by a throttle valve 87 connected to the dry pump 99 through the dry pump 99, P to exhaust the gas inside the chamber 10.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Should be interpreted as being.

1: Microwave plasma processing apparatus
10: chamber 11: gauge
13: Gas nozzle
20: upper plate
30: antenna 31: slot
33: Home
40: upper insulator 50: lower insulator
60: Antenna support ring 61:
63: fastening ball
70: Metal gasket
80: susceptor 81: heater
83: electrode 85: conductor
87: AC current supply module 89: RF module
90: Fixed portion 91: Support
93: Pressure regulating valve 95: Turbo pump
97: throttle valve 99: dry pump
W: semiconductor wafer P: exhaust pipe

Claims (8)

  1. A chamber in which a plasma process is performed;
    An upper plate provided at an upper portion of the chamber;
    An antenna disposed under the upper plate for generating plasma in the chamber;
    An upper insulator provided between the upper plate and the antenna, the upper insulator surrounding the antenna at an upper portion;
    A lower insulator provided below the antenna, the lower insulator surrounding the antenna;
    An antenna support ring provided under the antenna; And
    And a metal gasket attached to the antenna support ring,
    Wherein the antenna is fixed to the upper plate by the antenna support ring,
    The antenna includes a plurality of first slots disposed on a first outer circumferential surface of the antenna, a plurality of second slots disposed on a second outer circumferential surface of the antenna, and a plurality of third slots disposed on a third outer circumferential surface of the antenna, Slots,
    Wherein at least one of the plurality of first to third slots has a cross shape,
    Wherein each of the plurality of first slots includes first to fourth sub-slots that are spaced apart from each other.
  2. The method according to claim 1,
    Wherein the antenna is a flat plate antenna.
  3. 3. The method according to claim 1 or 2,
    Wherein the plurality of second and third slots have a cruciform shape.
  4. 3. The method according to claim 1 or 2,
    Wherein the antenna has a groove formed along an outer circumferential surface thereof.
  5. The method according to claim 1,
    Wherein the antenna support ring has protrusions formed along an outer circumferential surface thereof.
  6. The method according to claim 1,
    Wherein the metal gasket pushes up the antenna so that the antenna and the upper plate are kept in contact with each other.
  7. 7. The method according to claim 1 or 6,
    Wherein the metal gasket maintains electrical contact between the antenna and the antenna support ring.
  8. The method according to claim 1,
    A susceptor for fixing a semiconductor wafer to be plasma-processed in the chamber is provided in the chamber, and a heater for heating the semiconductor wafer is embedded in the susceptor or an electrode for applying RF bias to the semiconductor wafer is embedded And the microwave plasma processing apparatus.
KR1020110057331A 2010-07-02 2011-06-14 Microwave plasma processing apparatus KR101782384B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR20100063961 2010-07-02
KR1020100063961 2010-07-02

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/174,938 US8980047B2 (en) 2010-07-02 2011-07-01 Microwave plasma processing apparatus
US14/622,236 US10134567B2 (en) 2010-07-02 2015-02-13 Microwave plasma processing apparatus

Publications (2)

Publication Number Publication Date
KR20120003371A KR20120003371A (en) 2012-01-10
KR101782384B1 true KR101782384B1 (en) 2017-09-28

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KR1020110057331A KR101782384B1 (en) 2010-07-02 2011-06-14 Microwave plasma processing apparatus

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203869A (en) * 2002-01-07 2003-07-18 Naohisa Goto Plasma treatment device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203869A (en) * 2002-01-07 2003-07-18 Naohisa Goto Plasma treatment device

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