KR101696638B1 - Sensor package and method of manufacturing same - Google Patents

Sensor package and method of manufacturing same Download PDF

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Publication number
KR101696638B1
KR101696638B1 KR1020150090230A KR20150090230A KR101696638B1 KR 101696638 B1 KR101696638 B1 KR 101696638B1 KR 1020150090230 A KR1020150090230 A KR 1020150090230A KR 20150090230 A KR20150090230 A KR 20150090230A KR 101696638 B1 KR101696638 B1 KR 101696638B1
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South Korea
Prior art keywords
sensor
base substrate
sensor unit
unit
present
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KR1020150090230A
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Korean (ko)
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KR20170000961A (en
Inventor
손동남
이명희
박영문
윤동재
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크루셜텍 (주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin

Abstract

The present invention relates to a sensor package capable of varying thicknesses and a manufacturing method thereof. A sensor package according to an embodiment of the present invention includes a base substrate, a sensor unit, an encapsulation unit, and an adjustment unit. Here, the sensor portion is provided on the base substrate and electrically connected to the base substrate. The sealing portion is provided on the base substrate to cover the sensor portion. The adjustment unit is provided between the base substrate and the sensor unit to adjust the gap between the upper surface of the base substrate and the lower surface of the sensor unit.

Description

[0001] DESCRIPTION [0002] SENSOR PACKAGE AND METHOD OF MANUFACTURING SAME [0003]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensor package and a manufacturing method thereof, and more particularly, to a sensor package capable of varying thicknesses and a manufacturing method thereof.

Semiconductor chip, which is an integrated circuit made of semiconductor, is a basic device used in various electronic devices and is packaged in a series of processes such as chip on board (COB), wafer level package (WLP) and quad flat package (QFP).

Such a semiconductor chip is becoming thin and structurally simple due to the development of semiconductor packaging technology and the like, and the semiconductor chip has been gradually mounted on the outside of the electronic device.

For example, a semiconductor chip is used as a fingerprint sensor in electronic devices such as a mobile terminal, a PDA, and a tablet PC. Recently, fingerprint sensors are increasingly required as input device technology.

The fingerprint sensor can be manufactured in the form of a module including peripheral components or structures, and thus can be effectively mounted on various electronic devices. Fingerprint sensors of capacitance type, optical type, ultrasonic type, heat sensing type, non-contact type, etc., which are excellent in sensitivity, robust against external environment change and excellent in compatibility with electronic devices, .

On the other hand, in electronic devices, a navigation function for performing operation of a pointer such as a cursor is incorporated in a fingerprint sensor. Such a fingerprint sensor is called a biometric track pad (BTP). In addition, a switching function that receives information from a user may be incorporated into the fingerprint sensor.

FIG. 1 is an exemplary view schematically showing an electronic device having a conventional sensor package, and FIG. 2 is a cross-sectional view illustrating a configuration of a conventional sensor package.

1 and 2, the sensor package 20 in the electronic device 10 is disposed at a portion outside the region where the display portion 30 is provided. As described above, the sensor package 20 may be embodied as a fingerprint sensor package, for example.

The sensor package 20 may include a sensor portion 22 provided on the base substrate 21 and a sealing portion 23 formed to cover the surface of the base substrate 21 and the sensor portion 22 . An electrode (not shown) of the sensor unit 22 and an electrode (not shown) on the base substrate 21 may be electrically connected by a bonding wire 24.

In the case where the sensor unit 22 is a fingerprint sensor that senses a change in the electrical characteristics of the finger according to whether or not the finger of the user is approaching the finger, a sensing pixel (not shown) included in the sensor unit 22, It is possible to find a difference in capacitance due to a height difference according to a ridge, thereby generating a fingerprint image.

On the other hand, electronic apparatuses of various thicknesses are manufactured for each maker, and sensor packages of various thicknesses suitable for them are required.

To this end, a method of increasing the thickness of the sensor package by increasing the thickness of the base substrate is used. However, in order to increase the thickness of the base substrate, the cost is increased. In addition, since the thickness of the sensor package required by the manufacturer is various, there is a difficulty in management due to the presence of the base substrate having various thicknesses. When the base substrate having various thicknesses is applied, compatibility problems in the mold occur, There is a problem that utilization becomes difficult.

Next, there is a method of increasing the thickness of the sensor portion, but there is also a problem that the thickness of the sensor portion is limited due to the limit of the thickness of the wafer (generally, maximum 725 占 퐉).

Such a problem is common not only in the COB type electrostatic capacity type biometric patch pad but also in the fingerprint sensor package having the COB type electrostatic capacity type.

In order to solve the above problems, a technical object of the present invention is to provide a sensor package capable of diversifying its thickness and a method of manufacturing the sensor package.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a base substrate; A sensor unit provided on the base substrate and electrically connected to the base substrate; An encapsulation unit provided on the base substrate and covering the sensor unit; And an adjusting unit provided between the base substrate and the sensor unit to adjust an interval between an upper surface of the base substrate and a lower surface of the sensor unit.

In the embodiment of the present invention, the controller may include a bonding portion provided on a lower surface of the sensor portion, a thickness adjusting insertion portion coupled to a lower surface of the sensor portion by the bonding portion, As shown in Fig.

In one embodiment of the present invention, the adhesive portion may be an epoxy adhesive.

In one embodiment of the present invention, the inserting portion is formed to correspond to the planar shape of the sensor portion and may have the same thickness.

In one embodiment of the present invention, the attachment portion may be an adhesive film or an epoxy adhesive.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, Coupling an adjustment unit to a lower surface of the sensor unit; Providing the sensor portion on the base substrate such that the control portion is attached to the upper surface of the base substrate, and electrically connecting the sensor portion and the base substrate; And providing an encapsulation unit on the base substrate to cover the sensor unit.

In one embodiment of the present invention, in the step of providing the sensor unit, the sensor unit may be formed at a wafer level.

According to an embodiment of the present invention, the step of joining the regulating part may include the steps of: providing a bonding part on the lower surface of the sensor part formed at the wafer level; coupling the thickness adjusting insertion part to the lower surface of the sensor part by the bonding part; A step of adjusting the thickness of the insert by machining the lower surface of the insert, and a step of attaching the insert to the upper surface of the base substrate.

In one embodiment of the present invention, the adhesive portion may be an epoxy adhesive.

In one embodiment of the present invention, the inserting portion may be a silicon wafer formed to correspond to the planar shape of the sensor portion and having the same thickness.

In one embodiment of the present invention, the attachment portion may be an adhesive film or an epoxy adhesive.

In an embodiment of the present invention, between the step of joining the control unit to the lower surface of the sensor unit and the step of providing the sensor unit on the base substrate, the sensor unit of the wafer level, . ≪ / RTI >

According to an embodiment of the present invention, an adjustment unit is provided between the sensor unit and the base substrate, and the gap between the upper surface of the base substrate and the lower surface of the sensor unit can be adjusted. Accordingly, even when a sensor package having various thicknesses is required, the height of the sensor package can be easily adjusted while allowing the base substrate to be managed to a standardized thickness.

Since the standardized thickness management of the base substrate can ensure the compatibility in the mold, it is possible to utilize the common mold and reduce the cost required for manufacturing base boards having various thicknesses as in the conventional art.

It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the configuration of the invention described in the claims.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exemplary view schematically showing an electronic device having a conventional sensor package; FIG.
2 is a cross-sectional view illustrating a configuration of a conventional sensor package.
3 is a cross-sectional view illustrating a sensor package according to an embodiment of the present invention.
4 and 5 are flowcharts illustrating a method of manufacturing a sensor package according to an embodiment of the present invention.
6 is an exemplary view for explaining a manufacturing process of a sensor part of a sensor package according to an embodiment of the present invention.
7 is an exemplary view for explaining a manufacturing process of a sensor package according to an embodiment of the present invention.
8 is an exemplary view illustrating a state in which a sensor package according to an embodiment of the present invention is assembled into an electronic device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "indirectly connected" . Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view illustrating a sensor package according to an embodiment of the present invention.

The sensor package 100 according to an exemplary embodiment of the present invention may include a base substrate 110, a sensor unit 120, an encapsulation unit 140, and a control unit 150.

The sensor package 100 according to the present embodiment may be a biometric sensor package having a function of measuring biometric information. Hereinafter, the sensor package 100 will be described as a fingerprint sensor package for the sake of convenience.

First, the base substrate 110 may be a substrate on which the sensor unit 120 or the like is mounted and on which electric signal information is transmitted. The base substrate 110 may be, for example, a printed circuit board (PCB) or a flexible printed circuit board (FPCB). Also, although not shown, a lead frame may be attached to the lower portion of the base substrate 110 by resin injection or surface mounting technology (SMT).

The sensor unit 120 may be provided on the base substrate 110 and the sensor unit 120 may include the sensing pixel 121.

The sensor unit 120 can detect biometric information, for example, fingerprint information.

The sensor portion can detect the fingerprint of the user's finger being touched or closely spaced. Specifically, the sensor unit 120 may be a capacitance type fingerprint sensor that senses whether a user's finger, which is a subject, is approaching or changes in capacitance due to the movement.

When the sensor unit 120 is implemented as a fingerprint sensor, the sensing pixel 121 may form a capacitance with the user's finger. The sensing pixel 121 may include a plurality of unit pixels, and each pixel may form a capacitance in relation to a user's finger. The sensing pixel 121 can detect the difference in capacitance according to the fingerprint of the user's finger above the corresponding pixel by measuring the magnitude of the capacitance.

In addition, the sensor unit 120 may be a biometric trackpad (BTP) having a fingerprint sensing function for sensing a fingerprint and a pointer manipulation function. In addition, the sensor unit 120 can detect input information or static electricity according to whether the user's finger is approaching or moving, and have a pointer manipulation function to move a pointer such as a cursor based on the movement.

In addition, the sealing portion 140 may be provided on the base substrate 110 to cover the sensor portion 120. The sealing part 140 covers the base substrate 110 and the sensor part 120 to protect various electrical parts. The sealing part 140 may be formed of an epoxy molding compound, but is not limited thereto.

The adjusting unit 150 may be provided between the base substrate 110 and the sensor unit 120 to adjust the distance between the upper surface of the base substrate 110 and the lower surface of the sensor unit 120.

In detail, the regulating portion 150 may have an adhering portion 151, an inserting portion 152, and an attaching portion 153.

The adhesive portion 151 may be provided on the lower surface of the sensor portion 120. The bonding portion 151 may be an epoxy adhesive, but is not limited thereto.

The insertion portion 152 may be coupled to the lower surface of the sensor portion 120 by the adhesive portion 151.

The insertion portion 152 may be formed to correspond to the planar shape of the sensor portion 120 and may have the same thickness. That is, the insertion portion 152 may be in a flat plate shape.

In addition, the insertion portion 152 may be for thickness control. The thickness of the sensor package 100 may be adjusted according to the thickness of the inserting portion 152. The thickness of the inserting portion 152 may be adjusted according to the thickness requirement of the sensor package 100 have.

The inserting portion 152 can be manufactured from a wafer without an electric circuit.

The attachment portion 153 may be provided on the lower surface of the insertion portion 152 and may be attached to the upper surface of the base substrate 110. Accordingly, the sensor unit 120 may be provided on the base substrate 110.

The attachment portion 153 may be an attachment film or an epoxy adhesive, but is not limited thereto.

According to the present invention, the thickness of the sensor package 100 can be adjusted by providing the adjusting unit 150 between the base substrate 110 and the sensor unit 120.

Therefore, when a sensor package of various thicknesses is required for each manufacturer, the thickness of the sensor package can be adjusted by adjusting the thickness of the control part, so that the base substrate can be managed with a standardized thickness, It can be easy. In addition, by using a standardized base substrate, compatibility in the mold can be ensured, so that it is possible to utilize a common mold, and the cost for manufacturing a base substrate having various thicknesses can be reduced.

Meanwhile, the sensor unit 120 may be electrically connected to the base substrate 110. The sensor unit 120 and the base substrate 110 may be electrically connected in various ways. Hereinafter, the sensor unit 120 and the base substrate 110 are electrically connected by a bonding wire.

2 and 3, the sensor unit 120 and the base substrate 110 may be electrically connected to each other by a bonding wire 160. Referring to FIG. Here, the bonding wire 160 may electrically connect the electrode pad 122 of the sensor unit 120 and the electrode 111 of the base substrate 110. The bonding wire 160 may be covered by the sealing portion 140.

In the case where the sensor unit 120 is a fingerprint sensor, a driving signal can be sent toward the user's finger by an electrical connection configuration using the bonding wire 160, and in response to the transmitted driving signal, Can be received. The bonding wire 160 may be a gold wire, but is not limited thereto.

The sensor unit may be electrically connected to the base substrate 110 by a through silicon via (TSV) method in which a plurality of vias (not shown) are formed in a height direction of the sensor unit, Can be applied.

4 and 5 are flowcharts illustrating a method of manufacturing a sensor package according to an embodiment of the present invention. FIG. 6 is an exemplary view for explaining a manufacturing process of a sensor unit of a sensor package according to an embodiment of the present invention, 7 is an exemplary view for explaining a manufacturing process of a sensor package according to an embodiment of the present invention.

4 to 7, a method of manufacturing a sensor package according to an embodiment of the present invention may include a step S210 of providing a sensor unit.

In step S210, the sensor unit 120 may be formed at a wafer level. That is, the sensor unit 120 may be provided in a state of a wafer W, and the wafer W may be, for example, an 8 " or 12 " wafer (see FIG.

The method of fabricating a sensor package according to an embodiment of the present invention may include a step S220 of coupling a regulating part to a lower surface of the sensor part 120. [

In addition, the step S220 may include a step S221 of providing a bonding portion 151 on the lower surface of the sensor portion 120 formed at the wafer level. The bonding portion 151 may be an epoxy adhesive.

The step S220 may include a step S222 in which the thickness adjusting insertion portion 152 is coupled to the lower surface of the sensor unit 120 by the adhesion unit 151. [

The inserting portion 152 may be formed to correspond to the planar shape of the sensor portion 120, or may be a silicon wafer having the same thickness throughout. The inserting portion 152 may be the same as the wafer used for manufacturing the sensor portion 120 (see FIG. 6 (b)).

In addition, the step S220 may have a step S223 of adjusting the thickness of the inserting portion 152 by processing the lower surface of the inserting portion 152. Here, the thickness of the inserting portion 152 may be adjusted by any one of etching, cutting, and polishing (see (c) of FIG. 6).

6 (d) and 6 (e), in the step S220, the attaching portion 153 attached to the upper surface of the base substrate 110 is provided on the lower surface of the inserting portion 152 (S224). Here, the attachment portion 153 may be an adhesive film or an epoxy adhesive.

Thereafter, step S225 may be performed in which the wafer level sensor unit 120 coupled with the controller 150 is cut into chip sizes. In step S225, the chip size sensor unit 120 can be obtained by cutting the portion 170 between the electrode pad 122 and the electrode pad 122 of the wafer level sensor unit 120.

The above steps (S210 to S225) are steps of fabricating the sensor unit, and can be manufactured as a sensor package by following the steps described below.

For this, in the method of manufacturing the sensor package according to the embodiment of the present invention, the sensor unit 120 is provided on the base substrate 110 by attaching the adjusting unit 150 to the upper surface of the base substrate 110, (Step S230) of electrically connecting the sensor unit 120 and the base substrate 110 (refer to FIGS. 7A and 7B).

The sensor unit 120 and the base substrate 110 may be electrically connected in various ways. Hereinafter, an example in which the sensor unit 120 and the base substrate 110 are electrically connected by a bonding wire will be described.

In the method of manufacturing a sensor package according to an embodiment of the present invention, the sensor unit 120 and the base substrate 110 may be electrically connected by a bonding wire 160. That is, the bonding wire 160 can electrically connect the electrode pad 122 provided on the sensor unit 120 and the electrode 111 on the base substrate 110.

Meanwhile, the sensor unit may be electrically connected to the base substrate 110 by a through silicon via (TSV) method in which a plurality of vias (not shown) are formed in the height direction of the sensor unit.

In this case, the via may be formed in the sensor portion of the wafer level before the step S225 of cutting the wafer level sensor portion to the chip size sensor portion. 6 (d), the via may be formed through the sensor unit 120, the bonding unit 151, the inserting unit 152, and the mounting unit 153, .

The method of fabricating a sensor package according to an embodiment of the present invention may include a step S240 of providing an encapsulant 140 to cover the sensor unit 120 on the base substrate 110 7 (c)). The sealing part 140 may cover the bonding wire 160 and the sensor part 120 and the bonding wire 160 may be protected by the sealing part 140 in step S240.

8 is an exemplary view illustrating a state in which a sensor package according to an embodiment of the present invention is assembled into an electronic device.

8, the sensor package 100 according to an exemplary embodiment of the present invention is disposed in the button hole 510 of the electronic device 500 and is mounted on the main substrate 520 of the electronic device 500 .

The main substrate 520 may be a substrate to which electric signal information is transmitted. For example, the main substrate 520 may be a printed circuit board (PCB) or a flexible printed circuit board (FPCB).

A cover glass 530 may be provided on the upper portion of the sensor package 100. The cover glass 530 may be formed of any one of glass, sapphire and resin including acrylic resin. A color layer (not shown) may be further provided on at least one surface of the cover glass 530.

A bezel 540 may be provided on the outer side of the sensor package 100. The bezel 540 can dissipate static electricity, apply a driving voltage, or be implemented as a ground ring.

The sensor package 100 according to the embodiment of the present invention is provided with the adjusting part 150 having the thickness adjusting insertion part 152 between the base substrate 110 and the sensor part 120, It is easy to form the device 500 with a required thickness.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: sensor package 110: base substrate
120: sensor unit 150:
151: Adhesive part 152:
153: attachment part 500: electronic device

Claims (12)

A base substrate;
A sensor unit provided on the base substrate and electrically connected to the base substrate;
An encapsulation unit provided on the base substrate and covering the sensor unit; And
And an adjusting unit provided between the base substrate and the sensor unit to adjust an interval between an upper surface of the base substrate and a lower surface of the sensor unit,
Wherein the control portion has a cross-sectional size equal to the cross-sectional size of the sensor portion and is coupled to the lower surface of the sensor portion. The method according to claim 1,
The controller
A bonding portion provided on a lower surface of the sensor portion,
A thickness adjusting insertion portion coupled to a lower surface of the sensor portion by the adhesion portion,
And a mounting portion provided on a lower surface of the insertion portion and attached to an upper surface of the base substrate. 3. The method of claim 2,
Wherein the adhesive portion is an epoxy adhesive. 3. The method of claim 2,
Wherein the inserting portion has the same thickness throughout. 3. The method of claim 2,
Wherein the attachment portion is an attachment film or an epoxy adhesive. Providing a sensor unit;
Coupling an adjustment unit to a lower surface of the sensor unit;
Providing the sensor portion on the base substrate such that the control portion is attached to the upper surface of the base substrate, and electrically connecting the sensor portion and the base substrate; And
And providing an encapsulation unit on the base substrate to cover the sensor unit,
Wherein the adjusting portion has a cross-sectional size equal to the cross-sectional size of the sensor portion, and is coupled to the lower surface of the sensor portion. The method according to claim 6,
Wherein in the step of providing the sensor unit, the sensor unit is formed at a wafer level. 8. The method of claim 7,
The step of combining the adjuster
Providing a bonding portion on the lower surface of the sensor portion formed at the wafer level,
Wherein the thickness adjusting insert is coupled to the lower surface of the sensor unit by the adhering unit,
Adjusting a thickness of the insertion portion by machining a lower surface of the insertion portion;
And an attaching portion attached to an upper surface of the base substrate is provided on a lower surface of the inserting portion. 9. The method of claim 8,
Wherein the adhesive portion is an epoxy adhesive. 9. The method of claim 8,
Wherein the inserting portion is a silicon wafer having the same thickness throughout. 9. The method of claim 8,
Wherein the attachment portion is an attachment film or an epoxy adhesive. 9. The method of claim 8,
Wherein the sensor unit is cut into a chip size of the wafer level sensor unit coupled with the controller during a step of coupling the controller to a lower surface of the sensor unit and a step of providing the sensor unit on the base substrate. ≪ / RTI >
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