KR101681375B1 - 기상 성막 장치 - Google Patents

기상 성막 장치 Download PDF

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Publication number
KR101681375B1
KR101681375B1 KR1020140133061A KR20140133061A KR101681375B1 KR 101681375 B1 KR101681375 B1 KR 101681375B1 KR 1020140133061 A KR1020140133061 A KR 1020140133061A KR 20140133061 A KR20140133061 A KR 20140133061A KR 101681375 B1 KR101681375 B1 KR 101681375B1
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South Korea
Prior art keywords
injector
substrate
nitride
film
carbide
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KR1020140133061A
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English (en)
Korean (ko)
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KR20150040228A (ko
Inventor
노보루 스다
다까히로 오이시
준지 고메노
포-칭 루
쉬-영 쉬에
부-친 청
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헤르메스 에피텍 코포레이션
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Publication of KR20150040228A publication Critical patent/KR20150040228A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140133061A 2013-10-04 2014-10-02 기상 성막 장치 Expired - Fee Related KR101681375B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-209507 2013-10-04
JP2013209507A JP6058515B2 (ja) 2013-10-04 2013-10-04 気相成膜装置

Publications (2)

Publication Number Publication Date
KR20150040228A KR20150040228A (ko) 2015-04-14
KR101681375B1 true KR101681375B1 (ko) 2016-11-30

Family

ID=52693369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140133061A Expired - Fee Related KR101681375B1 (ko) 2013-10-04 2014-10-02 기상 성막 장치

Country Status (6)

Country Link
US (1) US20150096496A1 (https=)
JP (1) JP6058515B2 (https=)
KR (1) KR101681375B1 (https=)
CN (1) CN104513968B (https=)
DE (1) DE102014114099A1 (https=)
TW (1) TWI521089B (https=)

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CN102773048B (zh) * 2011-05-09 2017-06-06 波利玛利欧洲股份公司 生产环己酮肟的氨肟化反应器
TWI563542B (en) * 2014-11-21 2016-12-21 Hermes Epitek Corp Approach of controlling the wafer and the thin film surface temperature
JP6569406B2 (ja) * 2015-09-09 2019-09-04 セイコーエプソン株式会社 原子層堆積装置および原子層堆積の成膜方法
JP6685216B2 (ja) * 2016-01-26 2020-04-22 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
TWI612176B (zh) * 2016-11-01 2018-01-21 漢民科技股份有限公司 應用於沉積系統的氣體分配裝置
US10844490B2 (en) 2018-06-11 2020-11-24 Hermes-Epitek Corp. Vapor phase film deposition apparatus
CN214848503U (zh) 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
TWI680201B (zh) * 2018-09-27 2019-12-21 漢民科技股份有限公司 氣相沉積裝置及其蓋板與噴氣裝置
DE102018130140A1 (de) * 2018-11-28 2020-05-28 Aixtron Se Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors
DE102020101066A1 (de) * 2020-01-17 2021-07-22 Aixtron Se CVD-Reaktor mit doppelter Vorlaufzonenplatte
CN112323043A (zh) * 2020-10-30 2021-02-05 泉芯集成电路制造(济南)有限公司 一种气体分配器以及原子层沉积反应设备
CN119220962A (zh) * 2023-06-28 2024-12-31 中微半导体设备(上海)股份有限公司 晶圆承载装置、气相沉积设备及使用方法

Citations (1)

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JP2006093275A (ja) * 2004-09-22 2006-04-06 Hitachi Cable Ltd 気相成長方法

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FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
JPH06310438A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
JPH08181076A (ja) * 1994-10-26 1996-07-12 Fuji Xerox Co Ltd 薄膜形成方法および薄膜形成装置
US5468299A (en) * 1995-01-09 1995-11-21 Tsai; Charles S. Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
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JP4537566B2 (ja) * 2000-12-07 2010-09-01 大陽日酸株式会社 基板回転機構を備えた成膜装置
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JP2002305155A (ja) * 2001-04-09 2002-10-18 Nikko Materials Co Ltd ＧａＮ系化合物半導体結晶の結晶成長装置
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
JP2005005693A (ja) 2003-05-16 2005-01-06 Asekku:Kk 化学気相成長装置
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KR101309334B1 (ko) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
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JP2007180340A (ja) * 2005-12-28 2007-07-12 Matsushita Electric Ind Co Ltd 半導体装置の製造装置
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JP5409413B2 (ja) 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
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Also Published As

Publication number Publication date
KR20150040228A (ko) 2015-04-14
JP2015076417A (ja) 2015-04-20
JP6058515B2 (ja) 2017-01-11
TW201531589A (zh) 2015-08-16
CN104513968B (zh) 2017-04-12
US20150096496A1 (en) 2015-04-09
TWI521089B (zh) 2016-02-11
DE102014114099A1 (de) 2015-04-09
CN104513968A (zh) 2015-04-15

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