KR101677661B1 - Process chamber included in substrate disposition apparatus - Google Patents

Abstract

One embodiment of the process chamber includes a top plate; A substrate mounting part for supporting at least one substrate and capable of moving up and down; A receiving portion that receives the substrate seating portion and is closed by the top plate; A gas supply unit mounted on the upper plate and supplying a process gas to the containing unit; And a heat insulating material disposed below the upper plate and having a part of the gas supplying part inserted therein.

Description

[0001] The present invention relates to a process chamber included in a substrate processing apparatus,

Embodiments relate to process chambers provided in a substrate processing apparatus having a structure capable of preventing or reducing component parts of the process chamber due to thermal expansion.

The contents described in this section merely provide background information on the embodiment and do not constitute the prior art.

In general, a semiconductor memory device, a liquid crystal display device, an organic light emitting device, and the like are manufactured by stacking a structure having a desired shape by performing a plurality of semiconductor processes on a substrate.

The semiconductor manufacturing process includes a process of depositing a predetermined thin film on a substrate, a photolithography process of exposing a selected region of the thin film, an etching process of removing a thin film of the selected region, and the like. A substrate processing process for manufacturing such a semiconductor is performed in a substrate processing apparatus including a process chamber having an optimal environment for the process.

The process chamber is provided with a substrate to be processed and a substrate mounting portion on which the substrate is mounted, and a process gas containing a source material is injected onto the substrate. The source material contained in the process gas is used for deposition, etching, and the like on the substrate.

In some cases, the substrate processing process is performed in an environment where the inside of the process chamber is high. In this case, since components of the process chamber may be deformed due to thermal expansion, there is a demand for improvement that can prevent or reduce such deformation.

Accordingly, the embodiment relates to a process chamber provided in a substrate processing apparatus having a structure capable of preventing or reducing component parts of the process chamber due to thermal expansion.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

One embodiment of the process chamber includes a top plate; A substrate mounting part for supporting at least one substrate and capable of moving up and down; A receiving portion that receives the substrate seating portion and is closed by the top plate; A gas supply unit mounted on the upper plate and supplying a process gas to the containing unit; And a heat insulating material disposed below the upper plate and having a part of the gas supplying part inserted therein.

One embodiment of the process chamber may further include a cover member provided below the heat insulating member, formed in a plate shape, into which a part of the gas supply unit is inserted.

In one embodiment of the process chamber, a buffer layer may be provided between the heat insulating material and the cover member.

The buffer layer may be formed as a space between the heat insulating material and the cover member, and a heat insulating gas may be accommodated in the space.

The heat insulating gas may be at least one of argon gas and hydrogen gas.

And the cover member may be formed with a first through-hole through which the adiabatic gas flows.

The first through holes may be provided in a plurality of slit shapes, and each of the first through holes may be radially disposed in a radial direction of the cover member.

The first through hole may be formed such that an inner side of a side wall of the accommodating portion and an outer circumferential surface of the cover member are spaced apart from each other.

The cover member may be formed of a graphite material.

The cover member may be formed of a graphite material having a surface coated with tantalum carbide (TaC) or silicon carbide (SiC).

The heat insulating material may be formed of a material including at least one of graphite felt, ZrO ₂ , and carbon composite.

The heat insulating material may have a thickness of 20 mm to 60 mm.

The heat insulating material may be formed of a porous material.

In an embodiment, a heat insulating material may be disposed on the lower side of the upper plate to reduce a thermal gradient between the upper side and the lower side of the upper plate, thereby preventing or reducing warping due to the difference in thermal expansion of the upper plate.

In addition, by disposing the cover member on the lower side of the heat insulating material, the source material is prevented from contacting the heat insulating material, thereby preventing the source material from penetrating into the heat insulating material or depositing on the surface to shorten the life of the heat insulating material.

In addition, a buffer layer may be formed between the heat insulating material and the cover member to reduce the thickness of the heat insulating material.

1 illustrates a process chamber in accordance with one embodiment.
FIG. 2 is a view showing the process chamber of FIG. 1 viewed from inside to the top.
3 is a view of a process chamber according to another embodiment.
FIG. 4 is a view showing the process chamber of FIG. 3 viewed from inside to the top.
5 is a view of a process chamber according to another embodiment.
FIG. 6 is a view showing one embodiment of the process chamber of FIG. 5 viewed from inside to the top.
FIG. 7 is a view showing another embodiment of the process chamber of FIG. 5 viewed from inside to the top.
FIG. 8 is a graph showing the results of an experiment on the heat insulating effect of a heat insulating material according to an embodiment.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The embodiments are to be considered in all aspects as illustrative and not restrictive, and the invention is not limited thereto. It is to be understood, however, that the embodiments are not intended to be limited to the particular forms disclosed, but are to include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments. The sizes and shapes of the components shown in the drawings may be exaggerated for clarity and convenience.

The terms "first "," second ", and the like can be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. In addition, terms specifically defined in consideration of the constitution and operation of the embodiment are only intended to illustrate the embodiments and do not limit the scope of the embodiments.

In the description of the embodiments, when it is described as being formed on the "upper" or "on or under" of each element, the upper or lower (on or under Quot; includes both that the two elements are in direct contact with each other or that one or more other elements are indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "top / top / top" and "bottom / bottom / bottom", as used below, do not necessarily imply nor imply any physical or logical relationship or order between such entities or elements, But may be used only to distinguish one entity or element from another entity or element.

1 illustrates a process chamber in accordance with one embodiment. FIG. 2 is a view showing the process chamber of FIG. 1 viewed from inside to the top. The process chamber of the embodiment may include a top plate 100, a receiving portion 300, a substrate seating portion 200, a gas supply portion 400, a heat insulating material 500, a packing portion 800, and a heating portion 900 have.

The process chamber may be sealed by the top plate 100 and the receiving portion 300. The receiving part 300 may receive devices used in a substrate processing process such as a substrate receiving part 200 described below and the upper plate 100 serves to close the receiving part 300 .

The receiving portion 300 may form a receiving space by the bottom plate and the side wall 310, and the receiving space may accommodate devices used in a substrate processing process such as the substrate receiving portion 200. The upper plate 100 may be provided with a gas supply unit 400 described below and a packing unit 800 may be interposed between the accommodating unit 300 and the upper plate 100 to seal the upper plate 100 .

The substrate seating part 200 is provided inside the process chamber and supports at least one substrate 10 and can be raised and lowered. The substrate seating part 200 may be provided at a position facing the gas supply part 400. For example, a substrate mounting part 200 may be provided on the lower side of the process chamber, and a gas supply part 400 may be provided on the upper side of the process chamber.

A platform for supporting the substrate seating part 200 and moving the substrate seating part 200 up and down may be provided under the substrate seating part 200. The lift device is provided to support at least one area of the substrate seating part 200, for example, a central part. When the substrate 10 is placed on the substrate seating part 200, the substrate seating part 200 is moved to the gas supply part 400 ). ≪ / RTI >

The substrate mounting part 200, the top plate 100 and the accommodating part 300 are formed of a material having high heat resistance, corrosion resistance, chemical resistance, etc. so that the process gas containing the source material is injected and can withstand high temperature conditions. May be appropriate. For example, the substrate seating part 200, the top plate 100, and the accommodation part 300 may be formed of SUS material, that is, stainless steel material, to withstand such harsh conditions.

Also, the heating unit 900 may be disposed on the substrate seating unit 200. The heating unit 900 may be disposed adjacent to the substrate seating unit 200 and may serve to heat the substrate seating unit 200. At this time, the heating unit may be provided on the surface or inside of the substrate seating unit 200 as a resistance heating heating apparatus.

In addition, the heating unit 900 may be an induction heating type heating apparatus. In the following embodiments, a heating unit 900 of an induction heating system will be described as an example.

The gas supply unit 400 may be installed in the upper plate 100 and may supply the process gas supplied from an external supply unit to the accommodating unit 300. As shown by arrows in FIG. 1, the process gas introduced into the process chamber through the gas supply unit 400 may be injected directly onto the substrate 10 disposed on the substrate mount 200.

The process gas may include a thin film deposition gas, an etching gas, or the like so that the substrate 10 may be subjected to a deposition process or an etching process.

The outer shape of the gas supply unit 400 may be various shapes such as a circular shape, a polygonal shape, a curved shape, or the like as seen from the top and bottom. However, as shown in FIG. 2, it is appropriate that the gas supply unit 400 is formed in a rectangular shape in the vertical direction. Due to the outward appearance of such a square, the gas supply part 400 can be mounted so as not to rotate with respect to the top plate 100, the heat insulating material 500 and the cover member 600.

Accordingly, the upper plate 100, the heat insulating material 500, and the cover member 600 are formed with through holes having a shape conformable to the outer shape of the gas supplying part 400, and the gas supplying part 400 is provided in the through holes Can be inserted and mounted.

Although not shown, the gas supply unit 400 may include a plurality of spray holes, spray nozzles, and the like arranged in the horizontal and vertical directions to uniformly spray the process gas onto the substrate 10.

As shown in FIGS. 1 and 2, a plurality of gas supply units 400 may be provided. Although the two gas supply units 400 are shown in FIGS. 1 and 2, the number of the gas supply units 400 is not limited thereto, but may be any number of gas supply units 400, considering the size of the process chamber, the size of the gas supply unit 400, It can be selected appropriately.

The heat insulating material 500 is disposed on the lower side of the upper plate 100, and a part of the gas supplying part 400 can be inserted. The heat insulating material 500 may partially block the heat inside the process chamber from being transferred to the top plate 100.

The process chamber of the embodiment can process the substrate processing process at a high temperature of 1000 ° C or higher. The upper side of the upper plate 100 can be cooled by the outside air and the lower side can be heated by receiving the heat by the heating unit 900 inside the process chamber.

Accordingly, a relatively large thermal gradient may occur between the top and bottom of the top plate 100. This thermal gradient can cause a difference in thermal expansion between the top and bottom of the top plate 100. Due to the difference in thermal expansion between the upper side and the lower side, bending of the upper plate 100 may occur.

For example, when the upper side of the upper plate 100 is cooled to a lower temperature and the lower side of the upper plate 100 is heated to have a higher temperature, thermal expansion of the lower side of the upper plate 100 becomes larger, 100 has a smaller thermal expansion, the upper plate 100 can be warped downward.

In order to solve the warpage of the top plate 100, the thickness of the top plate 100 may be increased to reduce the degree of warpage. However, this may increase the size and load of the top plate 100 and the process chamber including the top plate 100 And may inconvenience the handling of the process chamber.

Therefore, in the embodiment, the heat insulating material 500 is disposed below the upper plate 100 without increasing the thickness of the upper plate 100, thereby reducing the thermal gradient between the upper side and the lower side of the upper plate 100, It is possible to prevent or reduce warpage caused by the difference in thermal expansion of the battery 100.

The heat insulating material 500 can withstand a high temperature of about 1000 캜 or higher, and it may be appropriate to use a material having a low heat transfer coefficient. For example, the heat insulating material 500 may include a material such as graphite felt, ZrO ₂ , carbon composite, or the like.

In addition, the heat insulating material 500 may be formed of a porous material. When formed of a porous material, the fine spaces formed in the heat insulating material 500 can increase the heat insulating efficiency of the heat insulating material 500. In addition, the heat insulating material 500 made of a porous material may serve as an inflow passage for adiabatic gas introduced into the buffer layer 700 described below.

The packing part 800 is provided between the top plate 100 and the accommodating part 300 and is disposed between the top plate 100 and the side wall 310 of the accommodating part 300 so as to prevent the process gas from flowing out. Can play a role. The packing part 800 may be formed, for example, in the form of an O-ring, and may be formed of a material capable of withstanding high temperatures.

The heating unit 900 can easily perform the thin film deposition process, the etching process, and the like on the substrate 10 by heating the substrate seating unit 200. As described above, in the embodiment, the heating unit 900 may be an induction heating system having an induction heating apparatus.

The induction heating method refers to a method of heating an object to be heated by converting electric energy into heat energy by electromagnetic induction. That is, the object to be heated can be heated by using Joule heat generated when a secondary current induced by electromagnetic induction flows through the object to be heated by using the object to be heated instead of the secondary coil of the transformer.

Accordingly, the heating unit 900 may be disposed inside the process chamber, away from the substrate seating unit 200 to be heated. In an embodiment, it may be appropriate to place the substrate below the substrate seating 200 where a relatively large space can be formed without affecting the flow of the process gas.

1, the heating unit 900 is spaced apart from the substrate seating unit 200 below the substrate seating unit 200 and laterally disposed along the substrate seating unit 200 .

3 is a view of a process chamber according to another embodiment. FIG. 4 is a view showing the process chamber of FIG. 3 viewed from inside to the top. As shown in FIGS. 3 and 4, the process chamber of the embodiment may further include a cover member 600.

The cover member 600 is provided below the heat insulating material 500 and is formed in a plate shape, and a lower part of the gas supplying part 400 can be inserted. In the case where the substrate processing process is repeated and repeated, a source material for deposition and etching contained in the process gas may penetrate the insulating material 500 or may be deposited on the surface.

The source materials penetrating the heat insulating material 500 may reduce the heat insulating efficiency of the heat insulating material 500 or shorten the lifetime thereof. In particular, the source materials deposited on the surface of the heat insulating material 500 may be aggregated to form particles. Likewise, these particles can reduce the heat insulating efficiency of the heat insulating material 500 or shorten the life span thereof.

Therefore, the cover member 600 can serve to separate the heat insulating material 500 from the source material to prevent the source materials from penetrating the heat insulating material 500 or depositing on the surface to form the particles.

The cover member 600 is suitably formed of a material having heat resistance, corrosion resistance, and chemical resistance so as to withstand high temperature and source material. For example, the cover member 600 may be formed of a material including graphite that satisfies these conditions.

The cover member 600 may be formed of graphite and may be formed by coating tantalum carbide (TaC) or silicon carbide (SiC) having high heat resistance, corrosion resistance, and chemical resistance on the surface thereof.

3, the upper panel 100 may be disposed on the upper surface of the heat insulating material 500 of the embodiment, and the cover member 600 may be disposed on the lower surface of the heat insulating material 500. As described above, (600) may serve to block the insulation material (500) from coming into contact with the source material contained in the process gas.

5 is a view of a process chamber according to another embodiment. FIG. 6 is a view showing one embodiment of the process chamber of FIG. 5 viewed from inside to the top. As shown in FIGS. 5 and 6, a buffer layer 700 may be provided in the process chamber of the embodiment.

The buffer layer 700 is a space provided between the heat insulating material 500 and the cover member 600. The buffering layer 700 may contain a heat insulating gas. In the case of forming the buffer layer 700, since the thickness of the heat insulating material 500 can be reduced to reduce the load of the process chamber, it can be easily handled in disassembling, assembling, and handling of the process chamber.

On the other hand, for example, a purge gas may be used as the heat insulating gas accommodated in the buffer layer 700. Purge gas is a gas that carries a source material or performs a purge process. That is, it can be regarded as a process gas that does not contain the source material used for deposition or etching. The purge gas used as the adiabatic gas may be, for example, argon gas or hydrogen gas.

The purge process refers to a process of discharging unnecessary materials, particles, and the like inside the process chamber to the outside of the process chamber. The purge process may use a purge gas, i.e., a process gas that does not include a source material.

Therefore, there is an advantage that the structure of the process chamber can be simplified by using the purge gas as the heat insulating gas without the necessity of introducing a separate heat insulating gas for forming the buffer layer 700 into the process chamber.

In addition, the purge gas may remain in the process chamber during a substrate processing process such as vapor deposition or etching. Therefore, if purge gas is used as a heat insulating gas, a separate exhaust line for discharging the heat insulating gas to the outside of the process chamber There is also an advantage that it is not necessary.

The structure for accommodating the heat insulating gas in the buffer layer 700 is as follows.

First, a piping line that communicates with the top plate 100 and transfers the purge gas used as a heat insulating gas to the top plate 100 can be formed. Although not shown in the drawing, a pipe line through which the source material flows and a purge gas pipe line through which the source material is transferred may be combined to communicate with the gas supply unit 400. Accordingly, it is possible to form a piping line that branches from the purge gas piping line and communicates with the top plate 100, thereby forming a piping line for transferring the heat insulating gas to the top plate 100.

Next, the upper plate 100 and the heat insulating material 500 may be provided with through holes (not shown) communicating with the heat insulating gas piping line and allowing the heat insulating gas to flow into the buffer layer 700. In this case, when the heat insulating material 500 is formed of a porous material, a fine space formed in the heat insulating material 500 may also serve as a passage through which the heat insulating gas flows into the buffer layer 700.

Next, the cover member 600 may be provided with a first through-hole 610 through which the adiabatic gas flows.

Therefore, the heat insulating gas is introduced into the buffer layer 700 through the through holes formed in the pipe line branching from the purge gas piping line, the top plate 100 and the heat insulating member, respectively, and the heat insulating gas is introduced between the heat insulating material 500 and the cover member 600 And may be introduced into the space below the cover member 600 through the first through-hole 610.

6, for example, the cover member 600 may be formed in a circular shape in a vertical direction, and the first through hole 610 may be formed in a slit shape having a narrow width and a long length . The first through holes 610 may be provided in a plurality, and the respective first through holes 610 may be radially arranged in the longitudinal direction of the cover member 600 in the radial direction.

Since the adiabatic gas is used as the adiabatic gas, the adiabatic gas flows into the buffer layer 700 and then flows into the space below the cover member 600 through the first through hole 610 and mixed with the process gas containing the source material And may be discharged to the outside of the process chamber through an exhaust line (not shown).

FIG. 7 is a view showing another embodiment of the process chamber of FIG. 5 viewed from inside to the top. 7, the first through-hole 610 may be formed along the outer circumferential surface of the circular cover member 600. As shown in FIG.

That is, the first through-hole 610 may be formed such that the inner side of the side wall 310 of the accommodating part 300 and the outer circumferential surface of the cover member 600 are spaced apart from each other. In other words, if the spacing space is formed by designing the diameter of the cover member 600 to be smaller than the diameter of the inner side surface of the side wall 310 of the accommodating portion 300, the spacing space can be the first through hole 610 have.

6 and 7, the first through hole 610 may have any shape as long as the insulating gas flowing into the buffer layer 700 can flow into the lower side of the cover member 600 It may be formed. However, it is appropriate to appropriately select the shape, total cross-sectional area, and the like of the first through-hole 610 considering the flow rate of the adiabatic gas.

In another embodiment, the process chamber may include only the buffer layer 700 to heat the inside of the process chamber and the top plate 100 with the buffer layer 700 without using the heat insulating material 500 as a heat insulating means It is possible. At this time, the buffer layer 700 may be formed as a space between the top plate 100 and the cover member 600, and a heat insulating gas may be accommodated in the space.

FIG. 8 is a graph showing the results of experiments on the heat insulating effect of the heat insulating material 500 according to an embodiment. In the experiment, a graphite felt having a thermal conductivity of 0.2 W / mK to 0.5 W / mK was used. The object of the experiment is a process chamber having the structure shown in FIG. 1 and FIG.

In the experiment, the thickness of the insulating material 500 was selected as 10 mm, 30 mm, and 50 mm, respectively. Also, the experimental temperature was set to 1000 to 1500 ° C. Experiments were carried out by measuring the warpage of the top plate 100 by the thickness and temperature of the respective heat insulators 500.

At this time, the warpage of the top plate 100 means a maximum value in which the top plate 100 is bent up and down in the initial position due to the difference in thermal expansion due to the upper and lower thermal gradients.

As can be seen from the graph, when the graphite felt having a thickness of 30 mm and a thickness of 50 mm is used as the heat insulating material 500, the warpage of the top plate 100 is remarkably reduced as compared with the graphite felt having a thickness of 10 mm.

That is, when the graphite felt having a thickness of 30 mm and a thickness of 50 mm is used as the heat insulating material 500, the heat insulating material 500 significantly reduces the thermal gradient of the upper and lower portions of the upper plate 100, Can be prevented or remarkably reduced depending on the temperature.

Accordingly, when the thickness of the heat insulating material 500 is selected to be 20 mm to 60 mm, it is possible to prevent or significantly reduce the warpage of the top plate 100 in the high-temperature process chamber of 1000 ° C or higher.

The heat insulating material 500 may be disposed on the lower side of the upper plate 100 to reduce the thermal gradient between the upper side and the lower side of the upper plate 100 to prevent or reduce the warping due to the difference in thermal expansion of the upper plate 100. [ .

The cover member 600 may be disposed below the heat insulating material 500 to prevent the source material from contacting the heat insulating material 500 so that the source material penetrates the heat insulating material 500 or is deposited on the surface of the heat insulating material 500, It is possible to prevent shortening the life of the battery.

The buffer layer 700 may be formed between the heat insulating material 500 and the cover member 600 to reduce the thickness of the heat insulating material 500.

While only a few have been described above with respect to the embodiments, various other forms of implementation are possible. The technical contents of the embodiments described above may be combined in various forms other than the mutually incompatible technologies, and may be implemented in a new embodiment through the same.

10: substrate
100: top plate
200:
300:
310:
400: gas supply unit
500: Insulation
600: cover member
610: First through hole
700: buffer layer
800: Packing part
900: heating section

Claims (14)

Top plate;
A substrate mounting part for supporting at least one substrate and capable of moving up and down;
A receiving portion that receives the substrate seating portion and is closed by the top plate;
A gas supply unit mounted on the upper plate and supplying a process gas to the containing unit;
A heat insulating material disposed below the upper plate and having a part of the gas supplying part inserted therein;
A cover member provided below the heat insulating member, formed in a plate shape, into which a part of the gas supplying unit is inserted; And
And a first through hole through which the heat insulating gas flows,
≪ / RTI > delete The method according to claim 1,
And a buffer layer is provided between the heat insulating material and the cover member. The method of claim 3,
The buffer layer may be formed,
And a space formed between the heat insulating material and the cover member, wherein the heat insulating gas is accommodated in the space. 5. The method of claim 4,
Wherein the adiabatic gas is at least one of an argon gas and a hydrogen gas. delete Claim 7 has been abandoned due to the setting registration fee. The method according to claim 1,
The first through-
Wherein the plurality of first through holes are arranged in a slit shape and each of the first through holes is radially disposed in a radial direction of the cover member. Claim 8 has been abandoned due to the setting registration fee. The method according to claim 1,
The first through-
And an inner side of a side wall of the accommodating portion and an outer circumferential surface of the cover member are spaced apart from each other. The method according to claim 1,
The cover member
Characterized in that it is formed of a graphite material. 10. The method of claim 9,
The cover member
Is formed of a graphite material coated with tantalum carbide (TaC) or silicon carbide (SiC) on the surface thereof. The method according to claim 1,
Wherein the heat insulator is formed of a material including at least one of graphite felt, ZrO ₂ , and carbon composite. Claim 12 is abandoned in setting registration fee. 12. The method of claim 11,
Wherein the heat insulating material has a thickness of 20 mm to 60 mm. The method according to claim 1,
Wherein the thermal insulation is formed of a porous material. Top plate;
A substrate mounting part for supporting at least one substrate and capable of moving up and down;
A receiving portion that receives the substrate seating portion and is closed by the top plate;
A gas supply unit mounted on the upper plate and supplying a process gas to the containing unit;
And a heat insulating material disposed on the lower side of the upper plate,
A cover member provided below the heat insulating member, formed in a plate shape, into which a part of the gas supplying unit is inserted; And
And a first through hole formed in the cover member,
The first through-
And an inner side of a side wall of the accommodating portion and an outer circumferential surface of the cover member are spaced apart from each other.

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