KR101637327B1 - Light emitting device package, backlight unit, lighting device and its manufacturing method - Google Patents

Light emitting device package, backlight unit, lighting device and its manufacturing method Download PDF

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Publication number
KR101637327B1
KR101637327B1 KR1020150068232A KR20150068232A KR101637327B1 KR 101637327 B1 KR101637327 B1 KR 101637327B1 KR 1020150068232 A KR1020150068232 A KR 1020150068232A KR 20150068232 A KR20150068232 A KR 20150068232A KR 101637327 B1 KR101637327 B1 KR 101637327B1
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KR
South Korea
Prior art keywords
electrode
pad
melting point
medium
underfill
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KR1020150068232A
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Korean (ko)
Inventor
김우철
이승훈
박성희
최재철
김수학
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주식회사 루멘스
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Priority to KR1020150068232A priority Critical patent/KR101637327B1/en
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Publication of KR101637327B1 publication Critical patent/KR101637327B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Abstract

The present invention relates to a light emitting device package which can be used for display or lighting, a backlight unit, a lighting device and a method for manufacturing the light emitting device package. The method may include a substrate preparing step of preparing a substrate where a first electrode is formed on one side based on an electrode separation line and a second electrode is formed on the other side; a mixed paste spraying step of spraying mixed paste where a bonding medium of a conductive material is mixed with an underfill medium of an insulating material, to the first electrode and the second electrode of the substrate; a light emitting element mounting step of mounting a light emitting element of a flip chip type to mount the first pad and the second pad on the mixed paste; and a reflow step of reflowing the mixed paste. So, an underfill process can be omitted.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, an illumination device, and a method of manufacturing a light emitting device package, and more particularly to a light emitting device package, a backlight unit, And a manufacturing method thereof.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

In a conventional light emitting device package, when a flip chip type light emitting device is mounted on a substrate such as a lead frame or a PCB, solder paste is applied to the first electrode and the second electrode of the substrate, And then performing a series of processes of reflowing and fusing.

However, conventional solder paste is generally a method of mixing a vaporizable flux into a conductive bonding medium, in which the flux is reflowed and the overall volume is reduced. As a result, the solder paste is first Silicon or a phosphor having weak adhesive strength, which is a filler for reflecting cup parts, penetrates to weaken the adhesive force between the light emitting element and the substrate. Second, bubbles are formed in the empty space between the light emitting element and the electrode separating line, Further, the adhesive force between the light emitting device and the substrate is weakened, and a sufficient underfill effect can not be obtained, thereby deteriorating the durability of the product.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide an epoxy solder which can be melted first and the bonding medium can be melted later, A light emitting device package capable of omitting a separate underfilling process by using an epoxy solder paste and being applicable to a microprocessing and greatly improving the adhesion between parts to maximize the durability of the product, And a method of manufacturing the light emitting device package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method comprising: forming a first electrode on one side and a second electrode on the other side of the electrode separation line, A method of manufacturing a semiconductor device, comprising: preparing a substrate having a molding material; Applying a mixed paste to the first electrode and the second electrode of the substrate, the mixed paste being a mixture of a bonding medium, which is a conductive material, and an underfill medium, which is an insulating material; Placing a light emitting device in the form of a flip chip so that the first pad and the second pad are seated on the mixed paste; And a reflow step of reflowing the mixed paste, wherein in the reflow step, the underfill medium is melted in a state where the bonding medium of the mixed paste is not melted, so that the resin affinity with the molding material Heating the mixed paste to a temperature equal to or higher than a melting point of the underfill medium so that the mixed paste can be flowed along the upper surface of the electrode separation line by the heating means while melting the underfill medium only through the upper surface of the electrode separation line An underfill media melting step for maintaining a temperature condition for the underfill media; And a step of mixing the bonding paste so that the bonding medium is melted and agglomerated by the metal affinity between the first pad and the first electrode and between the second pad and the second electrode among the mixed paste. And a bonding medium melting step of heating the bonding medium to a temperature higher than a melting point of the bonding medium higher than a melting point of the underfill medium.

In addition, according to the present invention, the bonding medium includes a solder powder having a first melting point and a first viscosity at melting, the underfill medium having a second melting point lower than the first melting point, 1, and the mixed paste may be an epoxy solder paste in which the solder powder and the epoxy-based resin are mixed with each other.

According to the present invention, the solder powder is in the form of a powder having a size of 5 micrometers to 15 micrometers so that the movement of the epoxy-based resin during flow can be restricted. The material of the solder powder is high in viscosity and high in metal affinity 2.8 to 3.2% by weight of silver (Ag), 0.3 to 0.7% by weight of copper (Cu), and the balance of tin (Sn).

Further, according to the present invention, the underfill medium melting step may include: a preheating step of preheating the mixed paste for a first time so that the mixed paste can be sufficiently heated; An underfill melting step of heating the mixed paste to a temperature higher than the melting point of the underfill medium and lower than a melting point of the bonding medium for a second time so that the underfill medium is melted in the mixed paste; And an underfill flow step for heating the mixed paste to a temperature higher than the melting point of the underfill medium and lower than the melting point of the bonding medium for a third time such that the molten underfill medium can flow sufficiently along the upper surface of the electrode separation line ; . ≪ / RTI >

In addition, according to the present invention, the bonding medium melting step may include melting the bonding medium contained in the molten underfill medium to melt the bonding medium between the first pad and the first electrode, And heating the mixed paste to a temperature not lower than a melting point of the bonding medium for a fourth time so that the mixed paste can be agglomerated between the first electrode and the second electrode. And a slow cooling step of slowly cooling the underfill medium and the bonding medium for a fifth time period in order to prevent cracks and thermal stresses due to abrupt temperature change upon discharge at normal temperature.

According to another aspect of the present invention, there is provided a light emitting device package comprising: a first electrode formed on one side of an electrode separation line, a second electrode formed on the other side of the electrode separation line, A substrate having a molding material; A first pad and a second pad are formed on the lower surface of the substrate, the first pad is electrically connected to the first electrode, and the flip- Chip type light emitting device; Wherein the first pad is electrically connected to the first electrode and the second pad and the second electrode are electrically connected to each other, the first pad has a first melting point, and when melted over the first melting point, A bonding medium having a metal affinity to be agglomerated between the first electrodes and between the second pad and the second electrode, and having a first viscosity when melted; And a second electrode having a second melting point lower than the first melting point and being coated on the first electrode and the second electrode together with the bonding medium and having a temperature higher than the second melting point and lower than the first melting point Has a resin affinity with respect to the molding material so as to flow in the direction of the electrode separation line while the melting temperature is maintained during melting and can be underfilled between the light emitting device and the electrode separation line, and has a second viscosity / RTI > underfill media.

According to the present invention, the underfill medium includes an epoxy-based resin having a high resin affinity with the molding material, and the bonding medium contains 2.8 to 3.2% by weight of silver, 0.3 to 0.7% by weight of copper ) And the remainder is tin (Sn).

According to the present invention, in the substrate, an alignment protrusion or a bonding medium receiving groove is formed at a position corresponding to the first pad and the second pad of the light emitting device so that the optical axis of the light emitting device can be aligned .

According to another aspect of the present invention, there is provided a backlight unit including a first electrode formed on one side of a first electrode and a second electrode formed on a second side of the first electrode, A substrate having a molding material; A first pad and a second pad are formed on the lower surface of the substrate, the first pad is electrically connected to the first electrode, and the flip- Chip type light emitting device; Wherein the first pad is electrically connected to the first electrode and the second pad and the second electrode are electrically connected to each other, the first pad has a first melting point, and when melted over the first melting point, A bonding medium having a metal affinity to be agglomerated between the first electrodes and between the second pad and the second electrode, and having a first viscosity when melted; And a second electrode having a second melting point lower than the first melting point and being coated on the first electrode and the second electrode together with the bonding medium and having a temperature higher than the second melting point and lower than the first melting point Has a resin affinity with respect to the molding material so as to flow in the direction of the electrode separation line while the melting temperature is maintained during melting and can be underfilled between the light emitting device and the electrode separation line, and has a second viscosity ; . ≪ / RTI >

According to an aspect of the present invention, there is provided an illumination device comprising: a first electrode formed on one side of an electrode separation line; a second electrode formed on the other side; A substrate having a molding material; A first pad and a second pad are formed on the lower surface of the substrate, the first pad is electrically connected to the first electrode, and the flip- Chip type light emitting device; Wherein the first pad is electrically connected to the first electrode and the second pad and the second electrode are electrically connected to each other, the first pad has a first melting point, and when melted over the first melting point, A bonding medium having a metal affinity to be agglomerated between the first electrodes and between the second pad and the second electrode, and having a first viscosity when melted; And a second electrode having a second melting point lower than the first melting point and being coated on the first electrode and the second electrode together with the bonding medium and having a temperature higher than the second melting point and lower than the first melting point Has a resin affinity with respect to the molding material so as to flow in the direction of the electrode separation line while the melting temperature is maintained during melting and can be underfilled between the light emitting device and the electrode separation line, and has a second viscosity / RTI > underfill media.

According to some embodiments of the present invention as described above, it is possible to greatly reduce process time and process cost by using a mixed paste in which a bonding medium and an underfill medium are mixed, The package can be made compact and the adhesion between the parts can be greatly improved to greatly improve the reliability and durability of the product and to line up the reflow process to maximize the productivity of the product. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view illustrating a light emitting device package according to some embodiments of the present invention.
FIGS. 2 to 5 are cross-sectional views illustrating steps of manufacturing the light emitting device package of FIG.
6 is a flowchart illustrating a method of manufacturing a light emitting device package according to some embodiments of the present invention.
7 is a graph showing an example of a temperature curve of the light emitting device package with respect to time in the reflow step of FIG.
8 is a plan view schematically showing an example of a heat treatment apparatus capable of implementing the reflow step of FIG.
FIG. 9 is a chart showing reflow conditions and examples of photographs of the heat treatment apparatus of FIG. 6; FIG.
10 is an enlarged cross-sectional view showing an edge portion of a conventional light emitting device package using a solder paste.
11 is an enlarged cross-sectional view showing an electrode separation line portion of a light emitting device package using a conventional solder paste.
12 is a cross-sectional enlarged view showing an edge portion of a light emitting device package according to some embodiments of the present invention.
13 is a cross-sectional enlarged view showing a portion of the electrode division line of the light emitting device package according to some embodiments of the present invention.
14 is a cross-sectional view illustrating a light emitting device package according to some other embodiments of the present invention.
15 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

1 is a cross-sectional view illustrating a light emitting device package 100 according to some embodiments of the present invention.

1, a light emitting device package 100 according to some embodiments of the present invention includes a substrate 10, a light emitting device 20, a bonding medium 30, and an underfill medium (not shown) 40).

1, a first electrode 11 is formed on one side of the substrate 10 with respect to the electrode separation line L and a second electrode 12 is formed on the other side of the substrate 10, The light emitting device 20 can receive the light emitting device 20 and is electrically connected to the light emitting device 20 by the first electrode 11 and the second electrode 12, And can be made of a material having appropriate mechanical strength so as to be able to support it.

More specifically, for example, as shown in FIG. 1, the substrate 10 may be a metal substrate of a plate form or a lead frame form such as aluminum, copper, zinc, tin, lead, . In addition, the substrate 10 may include a printed circuit board (PCB) on which a wiring layer is formed, a flexible printed circuit board (FPCB) or metal made of a soft material, Synthetic resin such as epoxy resin, glass epoxy or the like and ceramic material may be included in consideration of thermal conductivity. In order to improve workability, at least EMC (Epoxy Mold Compound), PI (polyimide) Or a combination of two or more materials.

1, a first pad P1 and a second pad P2 are formed on a lower surface of the light emitting device 20, and the first pad P1 is connected to the first electrode P1 Chip type LED that is electrically connected to the first electrode 11 and the second pad P2 is mounted above the electrode separation line L so as to be electrically connected to the second electrode 12 .

More specifically, for example, as shown in Fig. 1, the LED may be a flip chip type LED or an ultraviolet (UV) LED. However, the light emitting device 20 is not limited thereto, and various types of light emitting devices in which various horizontal or vertical LEDs, or signal transmission media such as various bumps, wires, and solders are installed, can be applied. 1, one light emitting device 20 is mounted on the substrate 10, but a plurality of light emitting devices 20 may be mounted on the substrate 10.

For example, the light emitting element 10 may be made of a semiconductor. For example, the light emitting element 10 may be formed of a material such as InN, AlN, InGaN, AlGaN, or InGaN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD. A nitride semiconductor such as InGaAlN may be epitaxially grown. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor including a multiple quantum well structure or a single quantum well structure or a laminated semiconductor of a double hetero structure. In addition, the light emitting device 20 can be selected to have an arbitrary wavelength depending on the application such as display use and illumination use.

1, the bonding medium 30 includes a first pad P1, a first electrode 11, a second pad P2, and a second electrode 12, (1) and the first electrode (11) and the second pad (P2) when melting at a temperature equal to or higher than the first melting point, the first electrode And may be a material having a metal affinity to be agglomerated between the second electrodes 12 and having a first viscosity at the time of melting.

More specifically, for example, as shown in FIG. 1, the first pad P1 and the second pad P2 include a silver (Ag) component, and the silver (Ag) The bonding medium 30 may include 2.8 to 3.2% by weight of silver, 0.3 to 0.7% by weight of copper, and the balance of copper, And may be a solder containing tin (Sn).

Therefore, since the solder includes a silver (Ag) component and is in the form of a powder containing tin (Sn) and copper (Cu) having excellent adhesion, if the underfill medium 40 is melted and spread in the radial direction It does not flow together with the underfill medium 40 and may not be largely deviated from its originally applied position due to its own weight.

The bonding medium 30 has a metal affinity at the time of melting so that the first and second electrodes P1 and P2 of the same metal material and the first electrode 11 and the second pad P2 and the second And the electrodes 12, respectively.

1, the under-fill medium 40 is made of an insulating material and has a second melting point lower than the first melting point, Is applied on the first electrode (11) and the second electrode (12) and flows in the direction of the electrode separation line (L) when melted at the second melting point or higher to form a gap between the light emitting device (20) and the electrode separation line May be a material having a resin affinity to underfill and having a second viscosity lower than the first viscosity upon melting.

More specifically, for example, as shown in FIG. 1, the underfill medium 40 includes a molding material 60, which is a resin material filled in the electrode separation line L, and an epoxy resin having a high resin affinity . Here, the epoxy-based resin may be a material having a very high adhesive strength when cured, superior in flowability at the time of melting, superior in penetration, and capable of being rejected from a metal component, that is, a hydrophobic material.

Therefore, the underfill medium 40 can flow farther than the bonding medium 30 because of its good flowability upon melting, and has a high affinity with the molding material 60, which is a relatively resin material, And the bonding medium 30 can be penetrated between the light emitting device 20 and the electrode separation line L to be underfilled and the bonding medium 30 can be penetrated between the first pad P1 and the first When the first and second electrodes P2 and P2 are naturally agglomerated between the electrodes 11 and the second electrode 12, they are separated from the bonding medium 30 and remain on the upper surface of the intermolding material 60, State can be maintained.

That is, the bonding medium 30 can be naturally aggregated between the above-described electrodes and pads as a material having low flowability and metal affinity, and the underfill medium 40 has high flowability, And may penetrate between the edge of the light emitting device 20 and the light emitting device 20 and the electrode separation line L to be naturally underfilled. Since the bonding medium 30 and the underfill medium 40 do not contain a flux component, it is possible to prevent the occurrence of voids due to the vaporization of the flux component and to prevent the edges of the light emitting element 20 The epoxy resin is completely filled between the light emitting device 20 and the electrode separation line L to improve the bonding force between the components.

FIGS. 2 to 5 are cross-sectional views illustrating steps of manufacturing the light emitting device package 100 of FIG. First, as shown in FIG. 2, a substrate 10 having a first electrode 11 formed on one side and a second electrode 12 formed on the other side of the electrode separation line L is prepared, A mixed paste 50 in which a bonding medium 30 as a conductive material and an underfill medium 40 as an insulating material are mixed is formed on the first electrode 11 and the second electrode 12 of the substrate 10 Can be applied.

At this time, the mixing ratio of the mixed paste 50 may be adjusted depending on the size or shape of the light emitting device 20, the first pad P1 and the second pad P2, 30 and the mixing ratio of the underfill medium 40 required for underfilling can be determined, respectively. Here, the application amount of the mixed paste 50 may also be determined according to a required ratio.

3, a flip chip type light emitting device 20 is mounted so that the first pad P1 and the second pad P2 are seated on the mixed paste 50, .

4, the mixed paste 50 may be melted and flowed along the upper surface of the electrode separation line L. In this case, Can be heated above the melting point of the underfill media (40). 4, when the bonding medium 30 is not melted, only the underfill medium 40 among the mixed paste 50 is melted first, and the edge portion of the light emitting device 20 And can flow under the electrode separation line (L).

In this case, for example, the bonding medium 30 may include a solder powder having a first melting point and having a first viscosity upon melting, the underfill medium 40 having a second melting point lower than the first melting point, And an epoxy-based resin having a viscosity lower than the first viscosity when melted. The mixed paste 50 may be an epoxy solder paste in which the solder powder and the epoxy-based resin are mixed .

More specifically, for example, the solder powder may be in the form of a powder having a size of 5 micrometers to 15 micrometers so that movement of the epoxy-based resin during flow may be restricted, 2.8 to 3.2% by weight of silver (Ag), 0.3 to 0.7% by weight of copper (Cu) and the remainder may be tin (Sn) so as to have an excellent affinity.

Therefore, since the solder includes a silver (Ag) component and is in the form of powder having a size of 5 micrometers to 15 micrometers including tin (Sn) and copper (Cu) 40 do not flow together with the underfill medium 40 even if they are melted and spread in the radial direction, they may not deviate greatly from the position originally applied by their own weight.

5, the bonding medium 30 of the mixed paste 50 is melted later, and the first pad P1 and the first electrode 11 and the second pad (not shown) The bonding paste 50 may be heated to a temperature equal to or higher than the melting point of the bonding medium 30 so as to be agglomerated using a metal affinity force between the second electrode 12 and the second electrode 12.

Accordingly, the underfill medium 40 is separated from the bonding medium 30 and remains on the upper surface of the intermolding material 60 while maintaining the underfill state. At the same time, the bonding medium 30 is separated from the first pad P1 Between the first electrodes 11 and between the second pads P2 and the second electrodes 12 can be naturally agglomerated to have a dense structure with high conductivity. Therefore, since the bonding medium 30 and the underfill medium 40 do not contain a flux component, it is possible to prevent the occurrence of pores due to the vaporization of the flux component, The epoxy resin is completely filled between the light emitting device 20 and the electrode separation line L to improve the bonding force between the components.

6 is a flowchart illustrating a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention.

1 to 6, a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention includes forming a first electrode 11 on one side with reference to an electrode separation line L (S1) for preparing a substrate (10) having a first electrode (11) and a second electrode (12) on the other side, A mixed paste applying step S2 of applying a mixed paste 50 in the form of a mixture of a bonding medium 30 as a material and an underfill medium 40 as an insulating material; (S3) for mounting a light emitting device (20) in the form of a flip chip so that the light emitting device (P2) is seated on the mixing paste (50) And a reflow step S4.

6, the underfill medium 40 of the mixed paste 50 is first melted to form a part of the electrode separation line L. In this reflow step S4, as shown in FIGS. 1 to 6, (S41) for heating the mixed paste (50) to a temperature equal to or higher than a melting point of the underfill medium (40) so that the mixed paste (50) can flow along the upper surface of the bonding paddle (50) Is melted and later melted to form the mixed paste 50 so that it can be agglomerated between the first pad P1 and the first electrode 11 and between the second pad P2 and the second electrode 12. [ And a bonding medium melting step (S41) for heating the bonding medium to a melting point or more of the bonding medium (30).

More specifically, for example, as shown in FIGS. 1 to 6, the underfill media melting step S41 may include a step of melting the underfill media 50 to the mixed paste 50 so that the mixed paste 50 can be sufficiently heated. A preheating step S411 for preheating the underfill media 40 for one hour t1 and a preheating step S411 for preheating the underfill media 40 during the first time t1 until the underfill media 40 is melted, The underfill melting step S412 for heating for a second time t2 and the mixing paste 50 so that the molten underfill medium 40 can flow sufficiently along the upper surface of the electrode separation line L. [ (S413) which heats the substrate (40) over a melting point of the underfill media (40) for a third time (t3).

1 to 6, the bonding medium melting step S42 may be performed by melting the bonding medium 30 contained in the molten underfill medium 40, The mixed paste 50 may be formed so as to be aggregated between the first pad P1 and the first electrode 11 and between the second pad P2 and the second electrode 12, A bonding medium agglomerating step S421 for heating the bonding medium 30 for a fourth time t4 at a temperature not lower than the melting point of the bonding medium 30 and a step of heating the underfill medium 40 and the underfill medium 40 to prevent cracking and thermal stress, And a slow cooling step S422 for slowly cooling the bonding medium 30 for a fifth time t5.

7 is a graph showing an example of a temperature curve of the light emitting device package 100 according to time in the reflow step S4 of FIG.

As shown in FIGS. 6 and 7, if the relationship between temperature and time is schematically displayed in the reflow step S4 described above, the reflow step S4 is performed in the preheating step S411 and the preheating step S411. , The underfill melting step S412, the underfill flow step S413, the bonding medium flocculation step S421, and the slow cooling step S422.

7, for example, it is possible to gradually heat up to the first temperature T1 during the first time t1 in the preheating step S411, and to heat the underfill medium 40) can be heated to a temperature above the melting point of the underfill media (40) for a second time (t2) such that the first underfill media (40) can be melted first, and the underfill flow The second temperature T2 may remain unchanged for a third time t3 so that the second temperature T2 can sufficiently flow until the bonding material 40 reaches the underfill region. In the bonding medium agglomeration step S421, Can be heated to a third temperature (T3) during the fourth time (t4), that is, to a temperature equal to or higher than the melting point of the bonding medium (30) so as to be melted and naturally agglomerated later, The bonding medium 30 and the underfill medium 40 are heated to room temperature It can be slowly cooled with air cooling manner. Accordingly, the underfilling process of the underfill medium 40 and the natural coagulation process of the bonding medium 30 are naturally performed while sequentially performing the five processes, thereby increasing the bonding force between the components and reducing the thermal stress.

Fig. 8 is a plan view schematically showing an example of a heat treatment apparatus H capable of implementing the reflow step S4 of Fig. 6; Fig.

8, light emitting device packages 100 according to some embodiments of the present invention are transported along a transport line ML, and the light emitting device package 100 is transported to the transport line ML. A heat treatment apparatus H capable of heating stepwise can be installed.

Here, for example, such a heat treatment apparatus H may include the preheating step S411, the underfilling step S412, the underfill flow step S413, and the bonding medium agglomeration The first heat treatment zone Zone 1, the second heat treatment zone Zone 2, the third heat treatment zone (Zone 1), and the second heat treatment zone (Zone 2) so as to perform a total of five processes including the step S421 and the slow cooling step Zone 3, a fourth heat treatment zone Zone 4 and a fifth heat treatment zone Zone 5.

Various heaters using a conduction method and / or a convection method may be installed in the respective regions. Here, the conduction type heater is easy to control the temperature, and the convection type heater has a small thermal stress, so that they can be appropriately applied to each region and effectively applied.

Fig. 9 is a diagram showing an example of a photograph and a reflow condition of the heat treatment apparatus H of Fig. 6; Fig.

9, the temperature conditions of the first heat treatment zone Zone1, the second heat treatment zone Zone2, and the third heat treatment zone Zone3 are 150 ° C., which is the melting point or higher of the epoxy, , The temperature condition of the fourth heat treatment zone (Zone 4) is 260 degrees Celsius, which is higher than the melting point of the solder, the temperature condition of the fifth heat treatment zone (Zone 5) is natural cooling, and each time is 40 seconds, The epoxy is heated in the first heat treatment zone Zone 1 and the epoxy is sufficiently spread from the second heat treatment zone Zone 2 to the third heat treatment zone Zone 3 and the solder melts in the fourth heat treatment zone Zone 4, It can be seen from the photographs that the epoxy is transparent and can be left on the electrode separation line and can be underfilled. However, such temperature or time is illustrative and not necessarily limited thereto.

FIG. 10 is an enlarged cross-sectional view showing an edge portion of a light emitting device package using a conventional solder paste, and FIG. 11 is an enlarged cross-sectional view showing an electrode dividing line portion of a light emitting device package using a conventional solder paste.

As shown in FIG. 10, in the photograph (lower middle portion) of the light emitting device edge portion of the light emitting device package using the solder paste using the flux having the vaporization component as an example, As shown in FIG. 11, a photograph (middle portion) of a portion of the light emitting device package using the solder paste using the flux having the conventional vaporization component, which is filled in void portions where silicon is vaporized and reduced in volume, , Voids are generated intermittently between the light emitting element and the electrode separating line, so that the bonding force between the entire components is greatly weakened and the underfill can not be sufficiently performed, thereby causing a weak point that is thermally, electrically and physically weak in a high temperature operating environment .

FIG. 12 is an enlarged cross-sectional view showing an edge portion of the light emitting device package 100 according to some embodiments of the present invention. FIG. 13 is a cross- L). Fig.

According to the light emitting device package 100 and the method of manufacturing the same according to some embodiments of the present invention, as shown in FIG. 12, a photograph of the edge portion of the light emitting device (red dotted line portion in the lower middle) Epoxy can be filled without any gap in the edge portion of the light emitting element, thereby enhancing the adhesive force. In the re-melting, the peeling phenomenon can be prevented by a strong adhesive force. As shown in FIG. 13, Looking at the underfill (mid-section), it can be filled with epoxy without voids, which greatly improves the bond strength between the parts as a whole, and the underfill can be made robust, making thermal, electrical and physically strong reliability and durability Can be produced.

14 is a cross-sectional view showing a light emitting device package 200 according to some other embodiments of the present invention.

14, a substrate 10 of a light emitting device package 200 according to some other embodiments of the present invention includes a light emitting device 20 such that an optical axis of the light emitting device 20 can be aligned, An alignment protrusion 70 may be formed at a position corresponding to the first pad P1 and the second pad P2.

The first pad P1 and the second pad P2 of the light emitting element 20 are seated on the alignment protrusion 70 so that when the bonding medium 30 or the underfill medium 40 is melted The optical axis of the light emitting device 20 can be aligned because the mounting height of the light emitting device 20 is fixed.

15 is a cross-sectional view illustrating a light emitting device package 300 according to still another embodiment of the present invention.

15, a substrate 10 of a light emitting device package 300 according to still another embodiment of the present invention includes a light emitting device 20 (light emitting device) A bonding medium receiving groove 80 may be formed at a position corresponding to the first pad P1 and the second pad P2.

The first pad P1 and the second pad P2 of the light emitting device 20 are contacted and held on the bonding medium receiving groove 80 so that the bonding medium 30 and the underfill medium 40 The optical axis of the light emitting device 20 can be aligned because the mounting height of the light emitting device 20 is fixed.

1, the present invention may include a backlight unit 1000 or a lighting device 1000 including the light emitting device package 100 according to some embodiments of the present invention.

1, the backlight unit 1000 or the lighting apparatus of the present invention includes a first electrode 11 formed on one side of the electrode separation line L and a second electrode 11 formed on the other side of the electrode separation line L, A first pad P1 and a second pad P2 are formed on the lower surface of the substrate 10 on which the first electrode 12 is formed and the first pad P1 is electrically connected to the first electrode 11, A flip chip type light emitting device 20 mounted above the electrode separation line L such that the second pad P2 is electrically connected to the second electrode 12, The first electrode 11 and the second electrode P2 are electrically connected to each other so that the pad P1 is electrically connected to the first electrode 11 and the second pad P2 and the second electrode 12, The first pad P1 and the first electrode 11 and the second pad P2 and the second electrode 12 may be aggregated between the first pad P1 and the first electrode 11, And a second melting point lower than the melting point of the bonding medium 30. The bonding medium 30 has a first melting point and a second melting point lower than the first melting point, (11) and the second electrode (12) and flows in the direction of the electrode separation line (L) when melted at the second melting point or higher to be underfilled between the light emitting device (20) and the electrode separation line (40) having a resin affinity and having a second viscosity lower than the first viscosity upon melting.

Here, the substrate 10, the light emitting device 20, the bond medium 30, and the underfill medium 40 may be the same as those of the light emitting device package 100 according to some embodiments of the present invention described above Its role and configuration may be identical to those of the components. Therefore, detailed description is omitted.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

Claims (10)

A substrate preparation step of preparing a substrate having a first electrode formed on one side of the electrode separation line, a second electrode formed on the other side of the electrode separation line, and a molding material filled in the electrode separation line;
Applying a mixed paste to the first electrode and the second electrode of the substrate, the mixed paste being a mixture of a bonding medium, which is a conductive material, and an underfill medium, which is an insulating material;
Placing a light emitting device in the form of a flip chip so that the first pad and the second pad are seated on the mixed paste; And
And a reflow step of reflowing the mixed paste,
The reflow step includes:
The underfill medium is melted in a state in which the bonding medium is not melted and the mixed paste is flowed along the upper surface of the electrode separation line due to resin affinity with the molding material, An underfill medium melting step of heating to a temperature higher than a melting point and maintaining a temperature condition for melting only the underfill medium while the underfill medium flows along the upper surface of the electrode dividing line; And
The bonding paste is melted so that the bonding paste can be agglomerated by the metal affinity between the first pad and the first electrode and between the second pad and the second electrode among the mixed paste, A bonding medium melting step of heating the bonding medium to a melting point higher than the melting point of the underfill medium;
Emitting device package. The method according to claim 1,
Wherein the bonding medium comprises a solder powder having a first melting point and having a first viscosity upon melting,
Wherein the underfill medium comprises an epoxy-based resin having a second melting point lower than the first melting point and having a viscosity lower than the first viscosity upon melting,
Wherein the mixed paste is an epoxy solder paste in which the solder powder and the epoxy-based resin are mixed. 3. The method of claim 2,
In the solder powder,
(Ag) of 2.8 to 3.2% by weight so as to have a high viscosity and a good metal affinity. The epoxy resin is in the form of a powder having a size of 5 micrometers to 15 micrometers so that the movement of the epoxy- 0.3 to 0.7% by weight of copper (Cu), and the balance of tin (Sn). The method according to claim 1,
The underfill media melting step comprises:
A preheating step of preheating the mixing paste for a first time so that the mixing paste can be sufficiently heated;
An underfill melting step of heating the mixed paste to a temperature higher than the melting point of the underfill medium and lower than a melting point of the bonding medium for a second time so that the underfill medium is melted in the mixed paste; And
An underfill flow step of heating the mixed paste to a temperature above the melting point of the underfill medium and a temperature below the melting point of the bonding medium for a third time such that the molten underfill medium can flow sufficiently along the top surface of the electrode separation line;
Emitting device package. 5. The method of claim 4,
The bonding medium melting step may include:
Wherein the bonding medium contained in the molten underfill medium is melted and is mixed with the first electrode and the second electrode by using the affinity between the first and second electrodes and between the second electrode and the second electrode, A bonding medium agglomerating step of heating the paste for a fourth time at a melting point or more of the bonding medium; And
A slow cooling step of slowly cooling the underfill medium and the bonding medium for a fifth time period to prevent cracks and thermal stresses due to abrupt temperature changes upon discharge at room temperature;
Emitting device package. A substrate having a first electrode formed on one side of the electrode separation line, a second electrode formed on the other side of the electrode separation line, and a molding material filled in the electrode separation line;
A first pad and a second pad are formed on the lower surface of the substrate, the first pad is electrically connected to the first electrode, and the flip- Chip type light emitting device;
Wherein the first pad is electrically connected to the first electrode and the second pad and the second electrode are electrically connected to each other, the first pad has a first melting point, and when melted over the first melting point, A bonding medium having a metal affinity to be agglomerated between the first electrodes and between the second pad and the second electrode, and having a first viscosity when melted; And
A second electrode having a second melting point lower than the first melting point and coated on the first electrode and the second electrode together with the bonding medium and having a temperature higher than the second melting point and lower than the first melting point Has a resin affinity with respect to the molding material so as to flow in the direction of the electrode separation line while being kept at the melting temperature during melting so as to be underfilled between the light emitting device and the electrode separation line and has a second viscosity lower than the first viscosity Underfill media;
Emitting device package. The method according to claim 6,
Wherein the underfill medium includes the molding material and an epoxy-based resin having a high resin affinity,
Wherein the bonding medium is a solder containing 2.8 to 3.2 wt% silver (Ag), 0.3 to 0.7 wt% copper (Cu), and the balance tin (Sn). The method according to claim 6,
Wherein the substrate has an alignment protrusion or a bonding medium receiving groove formed at a position corresponding to the first pad and the second pad of the light emitting element so that the optical axis of the light emitting element can be aligned. A substrate having a first electrode formed on one side of the electrode separation line, a second electrode formed on the other side of the electrode separation line, and a molding material filled in the electrode separation line;
A first pad and a second pad are formed on the lower surface of the substrate, the first pad is electrically connected to the first electrode, and the flip- Chip type light emitting device;
Wherein the first pad is electrically connected to the first electrode and the second pad and the second electrode are electrically connected to each other, the first pad has a first melting point, and when melted over the first melting point, A bonding medium having a metal affinity to be agglomerated between the first electrodes and between the second pad and the second electrode, and having a first viscosity when melted; And
A second electrode having a second melting point lower than the first melting point and coated on the first electrode and the second electrode together with the bonding medium and having a temperature higher than the second melting point and lower than the first melting point Has a resin affinity with respect to the molding material so as to flow in the direction of the electrode separation line while being kept at the melting temperature during melting so as to be underfilled between the light emitting device and the electrode separation line and has a second viscosity lower than the first viscosity Underfill media;
And a backlight unit. A substrate having a first electrode formed on one side of the electrode separation line, a second electrode formed on the other side of the electrode separation line, and a molding material filled in the electrode separation line;
A first pad and a second pad are formed on the lower surface of the substrate, the first pad is electrically connected to the first electrode, and the flip- Chip type light emitting device;
Wherein the first pad is electrically connected to the first electrode and the second pad and the second electrode are electrically connected to each other, the first pad has a first melting point, and when melted over the first melting point, A bonding medium having a metal affinity to be agglomerated between the first electrodes and between the second pad and the second electrode, and having a first viscosity when melted; And
A second electrode having a second melting point lower than the first melting point and coated on the first electrode and the second electrode together with the bonding medium and having a temperature higher than the second melting point and lower than the first melting point Has a resin affinity with respect to the molding material so as to flow in the direction of the electrode separation line while being kept at the melting temperature during melting so as to be underfilled between the light emitting device and the electrode separation line and has a second viscosity lower than the first viscosity Underfill media;
.
KR1020150068232A 2015-05-15 2015-05-15 Light emitting device package, backlight unit, lighting device and its manufacturing method KR101637327B1 (en)

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