KR101596521B1 - 화학 증폭형 레지스트 재료 및 패턴 형성 방법 - Google Patents

화학 증폭형 레지스트 재료 및 패턴 형성 방법 Download PDF

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Publication number
KR101596521B1
KR101596521B1 KR1020100050179A KR20100050179A KR101596521B1 KR 101596521 B1 KR101596521 B1 KR 101596521B1 KR 1020100050179 A KR1020100050179 A KR 1020100050179A KR 20100050179 A KR20100050179 A KR 20100050179A KR 101596521 B1 KR101596521 B1 KR 101596521B1
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South Korea
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group
carbon atoms
acid
polymer
unit
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KR1020100050179A
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Korean (ko)
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KR20100129227A (ko
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게이이찌 마스나가
사또시 와따나베
아끼노부 다나까
다이스께 도몬
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신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR20100129227A publication Critical patent/KR20100129227A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020100050179A 2009-05-29 2010-05-28 화학 증폭형 레지스트 재료 및 패턴 형성 방법 KR101596521B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009130020 2009-05-29
JPJP-P-2009-130020 2009-05-29

Publications (2)

Publication Number Publication Date
KR20100129227A KR20100129227A (ko) 2010-12-08
KR101596521B1 true KR101596521B1 (ko) 2016-02-22

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KR1020100050179A KR101596521B1 (ko) 2009-05-29 2010-05-28 화학 증폭형 레지스트 재료 및 패턴 형성 방법

Country Status (6)

Country Link
US (1) US8288076B2 (zh)
EP (1) EP2256551B1 (zh)
JP (1) JP5445320B2 (zh)
KR (1) KR101596521B1 (zh)
CN (1) CN101982808B (zh)
TW (1) TWI480688B (zh)

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JP5381905B2 (ja) * 2009-06-16 2014-01-08 信越化学工業株式会社 化学増幅ポジ型フォトレジスト材料及びレジストパターン形成方法
JP5561192B2 (ja) * 2010-02-26 2014-07-30 信越化学工業株式会社 高分子化合物及びこれを用いた化学増幅ポジ型レジスト組成物並びにパターン形成方法
JP5505371B2 (ja) * 2010-06-01 2014-05-28 信越化学工業株式会社 高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法
JP5278406B2 (ja) 2010-11-02 2013-09-04 信越化学工業株式会社 パターン形成方法
JP5601309B2 (ja) 2010-11-29 2014-10-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5365646B2 (ja) 2011-01-31 2013-12-11 信越化学工業株式会社 レジストパターン形成方法
JP5365651B2 (ja) * 2011-02-28 2013-12-11 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
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JP2013035942A (ja) * 2011-08-08 2013-02-21 Tokyo Ohka Kogyo Co Ltd 重合体、レジスト組成物およびレジストパターン形成方法
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JP5655754B2 (ja) * 2011-10-03 2015-01-21 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
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JP2013173855A (ja) * 2012-02-27 2013-09-05 Shin-Etsu Chemical Co Ltd 高分子化合物の製造方法、該製造方法によって製造された高分子化合物及びそれを含んだレジスト材料並びにパターン形成方法
JP6020347B2 (ja) * 2012-06-04 2016-11-02 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP5772760B2 (ja) * 2012-08-13 2015-09-02 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP2014074731A (ja) * 2012-10-02 2014-04-24 Tokyo Ohka Kogyo Co Ltd Ｅｕｖ用又はｅｂ用レジスト組成物、及びレジストパターン形成方法
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9581901B2 (en) 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US9229319B2 (en) 2013-12-19 2016-01-05 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US9581908B2 (en) * 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6319059B2 (ja) * 2014-11-25 2018-05-09 信越化学工業株式会社 フォトマスクブランク、レジストパターンの形成方法、及びフォトマスクの製造方法
KR102021301B1 (ko) 2015-02-27 2019-09-16 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 감활성광선성 또는 감방사선성막을 구비한 마스크 블랭크, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
JP6451469B2 (ja) * 2015-04-07 2019-01-16 信越化学工業株式会社 フォトマスクブランク、レジストパターン形成方法、及びフォトマスクの製造方法
US11613519B2 (en) 2016-02-29 2023-03-28 Rohm And Haas Electronic Materials Llc Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition
JP6520830B2 (ja) * 2016-05-31 2019-05-29 信越化学工業株式会社 ポリマー、ポジ型レジスト材料、及びパターン形成方法
US10416558B2 (en) * 2016-08-05 2019-09-17 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
JP7140964B2 (ja) * 2017-06-05 2022-09-22 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法
JP6722145B2 (ja) 2017-07-04 2020-07-15 信越化学工業株式会社 レジスト組成物及びレジストパターン形成方法

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Publication number Priority date Publication date Assignee Title
US20080102407A1 (en) 2006-10-27 2008-05-01 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
JP2008133448A (ja) 2006-10-27 2008-06-12 Shin Etsu Chem Co Ltd 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
EP2112554A2 (en) 2008-04-24 2009-10-28 Shin-Etsu Chemical Co., Ltd. Sulfonium salt-containing polymer, resist composition, and patterning process
JP2010197618A (ja) 2009-02-24 2010-09-09 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
US8288076B2 (en) 2012-10-16
KR20100129227A (ko) 2010-12-08
US20100304302A1 (en) 2010-12-02
CN101982808B (zh) 2013-06-26
CN101982808A (zh) 2011-03-02
TWI480688B (zh) 2015-04-11
JP5445320B2 (ja) 2014-03-19
TW201116926A (en) 2011-05-16
EP2256551A1 (en) 2010-12-01
JP2011008233A (ja) 2011-01-13
EP2256551B1 (en) 2015-05-13

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