KR101595828B1 - Liquid crystal display device - Google Patents

Abstract

A liquid crystal display device capable of efficiently and easily repairing defective pixels and a defective pixel recovery method thereof are provided. A liquid crystal display device according to an embodiment of the present invention includes a first insulating substrate, gate wirings and storage wirings arranged substantially in parallel in a first direction on the first insulating substrate, the gate wirings, And a first pixel electrode and a second pixel electrode formed on the protective film, wherein the second pixel electrode includes a first pixel electrode, a second pixel electrode, Wherein the storage wiring includes a horizontal portion arranged substantially in the first direction and a vertical portion branched from the horizontal portion substantially in the second direction and overlapping the data wiring, Wherein the width of the first pixel electrode overlaps with the first pixel electrode and the second pixel electrode, And the width of the vertical additional overlap can be substantially the same.

Description

[0001] Liquid crystal display device [0002]

The present invention relates to a liquid crystal display device.

A cathode ray tube (CRT), a liquid crystal display (LCD), a plasma display panel apparatus, and an electronic paper display (EPD) . Background Art [0002] Luminance display devices are in need of small size, light weight, and low power consumption, and accordingly, liquid crystal display devices are being actively developed.

The liquid crystal display includes a color filter substrate including a color filter, a thin film transistor substrate including a thin film transistor array, and a liquid crystal layer interposed between the two substrates.

A thin film transistor substrate of a liquid crystal display device includes a plurality of gate lines, a plurality of storage wirings, a plurality of data lines, and pixel electrodes, and each of these wirings has openings or short- short) may be caused. For example, when one data line is disconnected, all the pixels of one column connected to the data line are not operated.

There is a possibility that another pixel defect such as short-circuiting of overlapped wirings may occur during the process of repairing the pixel defect as described above.

Therefore, it is necessary to recover defective pixels efficiently and easily so as not to cause other pixel defects.

SUMMARY OF THE INVENTION The present invention provides a liquid crystal display device capable of efficiently and easily repairing defective pixels.

The technical objects of the present invention are not limited to the above-mentioned technical problems, and other technical subjects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a liquid crystal display device including a first insulating substrate, gate wirings and storage wirings arranged substantially in parallel in a first direction on the first insulating substrate, And a second pixel electrode formed on the passivation layer, wherein the first pixel electrode and the second pixel electrode intersect with the data line and are arranged in a substantially second direction, the passivation layer being formed on the data line, The two pixel electrodes are disposed adjacent to the first pixel electrode, and the storage interconnection is divided into a horizontal portion arranged substantially in the first direction and a vertical portion branched substantially in the second direction from the horizontal portion so as to overlap with the data interconnection Wherein the vertical portion overlaps the first pixel electrode and the second pixel electrode, and the first pixel electrode and the vertical portion overlap each other, The overlapping width may be substantially equal to a width overlapping the second pixel electrode and the vertical portion.

According to another aspect of the present invention, there is provided a liquid crystal display device including a first insulating substrate, gate wirings and storage wirings arranged substantially in parallel in a first direction on the first insulating substrate, And a pair of storage wirings of adjacent pixels, which are arranged in a first direction substantially perpendicular to the first direction and intersecting with the data line and arranged in a substantially second direction, a protective film formed on the data line, a first pixel electrode formed on the protective film, Wherein the pair of storage wirings is adjacent to the gate wirings, and the storage wirings include a horizontal portion arranged substantially in the first direction, and a plurality of storage electrodes arranged substantially in the second direction from the horizontal portion, Direction and overlaps with the data line.

 According to another aspect of the present invention, there is provided a liquid crystal display device including a first insulating substrate, gate wirings and storage wirings arranged substantially in parallel in a first direction on the first insulating substrate, A first pixel electrode and a second pixel electrode formed on the protective film, a second insulating film formed on the first insulating film and the second insulating film, A second insulating substrate facing the substrate; and a black matrix formed on the second insulating substrate, wherein the storage interconnection has a horizontal portion arranged substantially in the first direction and a second horizontal portion substantially arranged in the second direction And a vertical portion overlapping with the data line, wherein the black matrix is disposed between the first pixel electrode and the second pixel electrode, And the width at which the black matrix overlaps with the first pixel electrode may be substantially the same as the width at which the black matrix overlaps with the second pixel electrode.

The technical objects of the present invention are not limited to the above-mentioned technical problems, and other technical subjects not mentioned can be clearly understood by those skilled in the art from the following description.

As described above, according to the liquid crystal display apparatus and the defective pixel restoration method thereof according to the embodiments of the present invention, one or more of the following effects can be obtained.

First, even if a defective pixel occurs due to the disconnection of the data line, it can be safely and easily restored by using the bent portion of the storage wiring and the bridge electrode.

Second, even if a storage line, a data line, or a pixel electrode is short-circuited and a defective pixel occurs, it can be safely and easily restored by using the bent portion and the bridge electrode of the storage line.

Thirdly, even if the storage wiring is disconnected, since the bridge electrode electrically connects the disconnected storage wiring to the storage wiring located in another row, no signal delay is caused in the storage wiring where the disconnected portion exists.

1 is a layout diagram of a thin film transistor substrate included in a liquid crystal display device according to a first embodiment of the present invention.
2 is a cross-sectional view of the thin film transistor substrate of FIG. 1 taken along the line A-A '.
3 is a layout diagram of a color filter substrate included in a liquid crystal display device according to the first embodiment of the present invention.
4 is a layout diagram of a liquid crystal display device according to the first embodiment of the present invention.
5 is a cross-sectional view of the liquid crystal display of FIG. 4 taken along the line B-B '.
6 is a schematic view illustrating a method of recovering a broken line on a data line of the thin film transistor substrate of FIG.
FIG. 7 is a schematic view illustrating a method of recovering a data line of the thin film transistor substrate of FIG. 1 when a short circuit occurs. FIG.
FIG. 8 is a schematic view showing a method of recovering a short circuit when a pixel electrode of the thin film transistor substrate of FIG. 1 is formed. FIG.
9 is a layout diagram of a thin film transistor substrate included in a liquid crystal display device according to a second embodiment of the present invention.
10 is a cross-sectional view of the thin film transistor substrate of FIG. 9 taken along line C-C '.
11 is a schematic view showing a method of recovering a broken line on a data line of the thin film transistor substrate of FIG.
FIG. 12 is a schematic diagram showing a method of recovering a short circuit on the data line of the thin film transistor substrate of FIG. 9; FIG.
13 is a schematic view showing a method of recovering a short circuit when the pixel electrode of the thin film transistor substrate of FIG. 9 is recovered.
FIG. 14 is a schematic view showing the role of the bridge electrode in the occurrence of disconnection in the storage wiring of the thin film transistor substrate of FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

It is to be understood that when an element or layer is referred to as being "on" or " on "of another element or layer, All included. On the other hand, a device being referred to as "directly on" or "directly above " indicates that no other device or layer is interposed in between. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. Like reference numerals refer to like elements throughout the specification.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 to 5, a liquid crystal display according to a first embodiment of the present invention will be described in detail. 1 is a layout diagram of a thin film transistor substrate included in a liquid crystal display device according to a first embodiment of the present invention. 2 is a cross-sectional view of the thin film transistor substrate of FIG. 1 taken along the line A-A '. 3 is a layout diagram of a color filter substrate included in a liquid crystal display device according to the first embodiment of the present invention. 4 is a layout diagram of a liquid crystal display device according to the first embodiment of the present invention. 5 is a cross-sectional view of the liquid crystal display of FIG. 4 taken along the line B-B '.

4 and 5, the liquid crystal display device according to the first embodiment of the present invention includes a thin film transistor substrate 1, a color filter substrate 2 facing the thin film transistor substrate 1, And a liquid crystal layer 3 formed in a predetermined direction.

First, a thin film transistor substrate 1 according to a first embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2. FIG.

The thin film transistor substrate 1 according to the first embodiment of the present invention includes gate wirings 22 and 24 formed on a first insulating substrate 10, storage wirings 28 and 29, a gate insulating film 30, an active layer 40, resistive contact layers 55, 56 and data lines 62, 65, 66, 67, a protective film 70 and a pixel electrode 82, and the like.

The first insulating substrate 10 may be made of a material having heat resistance and transparency, for example, transparent glass or plastic.

On the first insulating substrate 10, gate wirings 22 and 24 and storage wirings 28 and 29, which are arranged substantially in parallel in the first direction, are formed. The gate wirings 22 and 24 and the storage wirings 28 and 29 may be formed on the same layer, for example, on the first insulating substrate 10.

The gate wirings 22 and 24 are arranged substantially in the first direction, for example, in the lateral direction to form gate lines 22 for transferring gate signals and gate electrodes 24 protruding from the gate lines 22 . The gate electrode 24 constitutes the third terminal of the thin film transistor together with the source electrode 65 and the drain electrode 66 which will be described later.

The storage wirings 28 and 29 are divided into a horizontal portion 28 arranged in parallel with the gate wirings 22 and 24 in the first direction and a plurality of data wirings 28 branched in the substantially second direction from the horizontal portion 28 62, 65, 66, 67, respectively.

Since the storage lines 28 and 29 receive the storage voltage, they form a storage capacitor together with a pixel electrode 82 to be described later, and also restore the pixel defect.

The horizontal portion 28 is arranged in parallel to the gate wirings 22 and 24, more specifically, spaced apart from the gate line 22. The horizontal portion 28 is disposed to overlap the pixel electrode 82 to be described later so that a storage capacitor is formed between the pixel electrode 82 and the horizontal portion 28.

At least a part of the horizontal portion 28 does not overlap with the pixel electrode 82 described later. Specifically, the horizontal portion 28 is entirely parallel to the gate line 22, and a bent portion 28a protruding from the edge of the pixel electrode 82 is formed in a part of the horizontal portion 28 so as not to overlap with the pixel electrode 82, . The bent portion 28a is bent toward the gate line 22 adjacent to the horizontal portion 28 and does not overlap with the gate wirings 22 and 24 and the data wirings 62 and 65, The bent portion 28a may have a shape of 'C', for example, but may be an arc shape, a 'G' shape, or the like as long as it does not overlap with the pixel electrode 82, and various modifications are possible. By including the bent portions 28a in which the storage wirings 28 and 29 do not overlap with the pixel electrodes 82 as described above, when a disconnection or a short circuit occurs in the data lines 62 and the pixel electrodes 82, can do. The pixel defect recovery method of such a liquid crystal display device will be described in detail later.

The vertical portion 29 is branched from the above-described horizontal portion 28 substantially in the second direction, for example, the longitudinal direction. More specifically, the horizontal portions 28 are arranged in the horizontal direction in parallel to the long side of the thin film transistor substrate 1, and the plurality of vertical portions 29 are branched from the respective horizontal portions 28, And may be arranged in the longitudinal direction in parallel with the short side of the substrate 1. [

The vertical portion 29 is branched from the horizontal portion 28 so that the end of the vertical portion 29 is formed adjacent to the gate line 22 of the adjacent pixel but is electrically connected to the gate line 22 of the adjacent pixel .

The vertical portion 29 overlaps the data line 62 to be described later and is used to recover the open or short of the data line 62. The pixel defect repair method of the liquid crystal display device of this embodiment will be described in detail as well.

The width W ₁ of the vertical portion 29 is formed to be wider than the width W ₂ of the data line 62. The edge of the vertical portion 29 overlaps the pixel electrode 82 along the second direction, for example, the vertical direction, and is emitted from the backlight assembly (not shown) Do not allow light to leak. That is, the vertical portion 29 overlaps with the pair of adjacent pixel electrodes 82. 3, the width W ₁ of the vertical portion 29 is formed to be equal to the width W ₃ of the black matrix 120 so that the aperture ratio is not reduced.

1 and 2, the gate wirings 22 and 24 and the storage wirings 28 and 29 are made of aluminum (Al), an aluminum-based metal such as an aluminum alloy, a silver (Ag) Metal such as copper, molybdenum (Mo) and molybdenum alloy, chromium (Cr), titanium (Ti), tantalum (Ta) or the like, such as copper and copper alloy. Further, the gate wirings 22 and 24 and the storage wirings 28 and 29 may have a multi-film structure including two conductive films (not shown) having different physical properties. The gate wirings 22 and 24 and the storage wirings 28 and 29 may be formed by applying a conductive organic high molecular material PEDOT (PolyEthylene DiOxythiophene) by a coating method or by an ink-printing method.

A gate insulating film 30 made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) or an organic insulating material such as BCB (BenzoCycloButene), acrylic material or polyimide is formed on the first insulating substrate 10, (22, 24) and the storage wirings (28, 29).

An active layer 40 made of hydrogenated amorphous silicon, polycrystalline silicon, or a conductive organic material is formed on a part of the gate insulating film 30.

The active layer 40 may have various shapes such as a island shape or a linear shape and the active layer 40 may be formed on the gate electrode 24 and the gate electrode 24, Overlaps at least part of the source electrode 65 and the drain electrode 66, which will be described later. The shape of the active layer 40 is not limited to the island shape and can be variously modified. When the active layer 40 is linearly formed, it may have a shape extending below the data line 62 and extending to the top of the gate electrode 24. [

An upper portion of the active layer 40 is covered with an ohmic contact layer 55 made of a material such as silicide or n-type hydrogenated amorphous silicon doped with an n-type impurity at a high concentration or ITO doped with a p-type impurity 56 may be formed. The resistive contact layers 55 and 56 are placed on the active layer 40 in pairs to improve the contact characteristics between the source electrode 65 and the drain electrode 66 described below and the active layer 40 . The resistive contact layers 55 and 56 can be omitted when the contact layer between the active layer 40 and the source electrode 65 and the drain electrode 66 formed on the active layer 40 is satisfactory.

Data lines 62, 65, 66, and 67 are formed on the active layer 40 and the gate insulating film 30. The data lines 62, 65, 66, 67 are arranged substantially in the second direction, for example, mainly in the longitudinal direction. The data lines 62, 65, 66, and 67 extend from the data line 62 branched from the gate line 22 to the top of the active layer 40 And a drain electrode 66 separated from the source electrode 65 and the source electrode 65. [

The data lines 62 are arranged in the vertical direction and cross the gate lines 22, and receive data signals.

The source electrode 65 may be branched from the data line 62 to have a 'J' shape and overlap at least partially with the active layer 40.

One end of the drain electrode 66 is located in the concave portion of the source electrode 65 which is in the shape of "J" and overlaps at least partially with the active layer 40.

The drain electrode extension part 67 extending from one end of the drain electrode 66 and electrically connected to the pixel electrode 82 is formed to have a width wider than the drain electrode 66. The drain electrode extension 67 is formed outside the pixel region so as not to reduce the aperture ratio. The portion from the one end of the drain electrode 66 to the drain electrode 66 is formed in a linear shape so as to minimize the decrease of the aperture ratio and overlaps the horizontal portion 28 of the storage wirings 28 and 29. Here, the pixel region means an area defined by the gate wirings 22 and 24 and the data wirings 62, 65, 66, and 67. The pixel region can be understood as a region through which light emitted from the backlight assembly passes. Therefore, it is understood that the color filter (see 130 in FIG. 3) region of the color filter substrate (see 2 in FIG. 5) corresponding to the pixel region of the thin film transistor substrate 1 is also the pixel region.

The data lines 62, 65, 66, and 67 may be made of a refractory metal such as chromium, molybdenum metal, tantalum and titanium, and may be formed of a lower film (not shown) (Not shown). Examples of the multilayer structure include a chromium lower film and an aluminum upper film or a double film of an aluminum lower film and a molybdenum upper film, and a triple film of a molybdenum film-aluminum film-molybdenum film.

A protective film 70 made of an organic insulating film is formed on the data line 62, the drain electrode 66, and the exposed semiconductor layer 40. Here, the protective layer 70 may be formed of an inorganic material such as silicon nitride or silicon oxide, an organic material having excellent planarization characteristics and photosensitivity, or an a-Si: C: O (silicon oxide) film formed by plasma enhanced chemical vapor deposition (PECVD) , a-Si: O: F, or the like. In addition, the protective layer 70 may have a bilayer structure of a lower inorganic layer and an upper organic layer to protect the exposed semiconductor layer 40 while taking advantage of the excellent characteristics of the organic layer.

A contact hole 72 for exposing the drain electrode extension 67 is formed in the protection film 70.

A pixel electrode 82 electrically connected to the drain electrode 66 through the contact hole 72 is formed on the protective film 70. A drain electrode connection portion 82a is formed on one side of the pixel electrode 82 and is electrically connected to the drain electrode 66, specifically, the drain electrode extension portion 67 through the contact hole 72 And receives the data voltage through the drain electrode 66. The drain electrode connection portion 82a may protrude out of the pixel region where light is emitted from the backlight assembly so that the aperture ratio is not reduced.

The pixel electrode 82 may be formed of a transparent conductor such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) or a reflective conductor such as aluminum.

4 and 5, the pixel electrode 82 to which the data voltage is applied is formed between the pixel electrode 82 and the common electrode 140 by generating an electric field together with the common electrode 140 of the color filter substrate 2, The alignment of the liquid crystal molecules of the liquid crystal layer 3 is determined.

Hereinafter, the color filter substrate 2 included in the liquid crystal display device of this embodiment will be described in detail with reference to Figs. 3 to 5. Fig.

The color filter substrate 2 includes a black matrix 120 formed on the lower surface of the second insulating substrate 100, a color filter 130, an overcoat film (not shown), a common electrode 140, And is arranged to face the substrate 1.

The second insulating substrate 100 of the color filter substrate 2 may be made of a material having heat resistance and transparency, for example, transparent glass or plastic.

On the insulating substrate 100 of this embodiment, a black matrix 120 made of an opaque material such as chrome (Cr) is formed to partition the pixel region.

The black matrix 120 is arranged in a matrix in a first direction and a second direction, the second direction, for example, the width in the vertical direction (W ₃₎ is the vertical portion of the storage line (28, 29) as described above (29).

The red, green, and blue color filters 130 are sequentially formed in the pixel region partitioned by the black matrix 120. The color filter 130 is made of a material that transmits light of different colors, and passes only light of a specific wavelength band.

The color filter 130 may be arranged in a stripe, mosaic, delta, or the like shape. In the present embodiment, a stripe-shaped color filter 130 will be described as an example. In the stripe-shaped color filter 130, color filters 130 of the same color in the second direction, for example, in the vertical direction, are disposed. That is, an arbitrary n-th (where n is a natural number) color filter in a first direction, for example, a lateral direction may be a red color filter, an (n + 1) th color filter may be a green color filter, Th color filter may be a blue color filter.

On the color filter 130, an overcoat film made of an organic material is formed. A common electrode 140 made of a transparent conductive material such as ITO or IZO is formed on the overcoat film. Although not shown, a spacer for maintaining a certain distance from the thin film transistor substrate 1 may be formed on the pixel electrode 82, and the liquid crystal layer 3 is interposed in an interval maintained by the spacers.

Hereinafter, with reference to FIGS. 6 to 8, a method of recovering a defective pixel when a pixel defect occurs in the liquid crystal display device of the present embodiment will be described in detail. FIG. 6 is a schematic view illustrating a method of recovering a broken line on a data line of the thin film transistor substrate of FIG. FIG. 7 is a schematic view illustrating a method of recovering a data line of the thin film transistor substrate of FIG. 1 when a short circuit occurs. FIG. FIG. 8 is a schematic view showing a method of recovering a short circuit when a pixel electrode of the thin film transistor substrate of FIG. 1 is formed. FIG.

First, a thin film transistor substrate 1 as described with reference to FIGS. 1 and 2 is provided. In this case, since the thin film transistor substrate 1 is composed of a plurality of wirings and electrodes, breakage may occur in these wirings, or a short circuit may occur between the wirings or between the wirings and the electrodes.

As specifically shown in Figure 6, when the disconnection portion (O ₁₎ to the data line 62 occurs, all of the pixels associated with the disconnected data line 62 does not work.

In order to recover such a pixel defect, a laser beam is irradiated so that the data line 62 and storage lines 28 and 29 corresponding to both sides of the disconnection part O ₁ are electrically connected to the laser short-circuit part LS ₁ , LS ₂ ) are formed. The laser beam melts a part of the data lines 62 and the storage wirings 28 and 29 disposed thereunder to form laser shorting parts LS ₁ and LS ₂ and accordingly the data lines 62 and the storage wirings 28 and 29 are electrically connected to each other. As a result, the signal applied through the data line 62 does not pass through the disconnected part O ₁ of the data line 62, but passes through the storage lines 28 and 29 through the laser shorting parts LS ₁ and LS ₂ , A defective pixel can be easily recovered by forming a separate current path that bypasses the vertical portion 29 of the TFT array substrate. In this case, for example, a laser beam having a green wavelength band (about 532 nm) can be used, and a laser beam having a wavelength of about 0.1 to 1 mJ for melting the vertical portion 29 and the data line 62 of the storage wirings 28, Can be applied. The diameter of the laser beam spot may be, for example, about 1-4 mu m.

However, in the case where only the above-described steps are performed, the data signals applied through the data lines 62 are transferred to the storage wirings 28 and 29 to the storage wirings 28 and 29, It is preferable to disconnect the storage wirings 28 and 29 of the pixel where the failure occurs because it may interfere with the applied storage voltage signal and affect other pixels not causing the failure. The particular storage wiring horizontal section 28 the laser-line region (LC _1, LC ₂₎ is irradiated with laser beam to a portion, that is, the bent portion (28a) does not overlap the pixel electrode 82 of the 28, 29 The storage wirings 28 and 29 are disconnected. In this case, to form the laser-line region (LC _1, LC ₂₎ in both the bent part (28a) of the pixel regions adjacent to both sides of the broken data line (62). That is, when one data line 62, the broken-line laser region (LC _1, LC ₂₎ is to form each of the two bent portions (28a) located on both sides of disconnected data line 62. The By disconnection of the portion that does not overlap with the pixel electrode 82, that is, the bent portion 28a, the signal interference phenomenon of other pixels that may occur in the process of restoring the defective pixel can be prevented

By forming the bent portions 28a that do not overlap with the pixel electrodes 82 in the storage wirings 28 and 29 by using the laser beam as in the present embodiment, The data line 62 is short-circuited with the source electrode 65 located below the data line 62 to cause the above-described signal interference or the addition of the fine data line 62 It is possible to prevent the occurrence of disconnection.

As shown in Fig. 7, since the overlapped area between the data line 62 and the storage wirings 28 and 29 is wide, there is a high possibility that they are short-circuited by particles or the like. When the short-circuiting portion S ₁ is generated between the data line 62 and the storage wiring lines 28 and 29, the above-described signal interference occurs in all the storage wirings 28 and 29 connected to the short-circuited data line 62 Causing pixel defects.

The horizontal portions 28 of the storage wirings 28 and 29 are formed with bent portions 28a protruding from the edges of the pixel electrodes 82. Therefore, laser in the bent part (28a) of an area-line part can be formed (LC _3, LC _4). That is, when one data line 62 is short-circuited, the laser disconnection portions LC ₃ and LC ₄ are formed in the two bent portions 28a located on both sides of the short-circuited data line 62, , 29 and the data lines 62, 65, 66, 67 from occurring.

As described above, the thin film transistor substrate 1 of the present embodiment has the bent portions 28a formed in the storage wirings 28 and 29 so that the bent portions 28a protrude from the edge of the pixel electrode 82, (LC ₃ , LC (LC), LC) are formed on the horizontal portion 28 of the storage wiring 28, 29 adjacent to the shorting portion S ₁ when the vertical portions 29 of the storage wirings 28, 29 are short- ₄ ) can be easily formed. As a result, it is possible to easily recover the defective pixel due to the short-circuited data line 62.

8, when a short-circuiting portion S ₂ is generated between the storage wiring lines 28 and 29 and the pixel electrode 82 by particles or the like, an undesirable storage voltage is applied to the pixel electrode 82, ≪ / RTI >

In this case, the horizontal portion 28 of each of the storage wirings 28 and 29 is provided with the bent portion 28a protruding from the edge of the pixel electrode 82. Therefore, The laser cut-off portions LC ₅ and LC ₆ can be formed in the bent portion 28a of the region. That is, when one storage line 28, 29 is short-circuited, the laser disconnection portions LC ₅ , LC ₆ are respectively formed in the two bent portions 28a located on both sides of the short-circuited storage lines 28, 29 . Thus, defects can be prevented from being caused to all the pixels connected to the short-circuited storage wirings 28 and 29.

The thin film transistor substrate 1 of the present embodiment has the bent portions 28a formed in the storage wirings 28 and 29 so that the bent portions 28a protrude from the edge of the pixel electrode 82, The laser disconnection portions LC ₅ and LC ₆ can be formed in the storage wirings 28 and 29 when the storage wirings 28 and 29 are short-circuited. Thus, defects can be prevented from being caused to all the pixels connected to the short-circuited storage wirings 28 and 29. This defective pixel restoration method can recover the defective pixel without turning off the defective pixel by shorting the pixel electrode 82 and the gate line 22 by irradiating the defective pixel electrode 82 with a laser beam have.

Hereinafter, a liquid crystal display device according to a second embodiment of the present invention will be described in detail with reference to FIGS. 9 and 10. FIG. 9 is a layout diagram of a thin film transistor substrate included in a liquid crystal display device according to a second embodiment of the present invention. 10 is a cross-sectional view of the thin film transistor substrate of FIG. 9 taken along line C-C '.

For convenience of explanation, members having the same functions as the members shown in the drawings of the previous embodiment are denoted by the same reference numerals and the description thereof will be omitted or simplified. 9 and 10, the liquid crystal display according to the present embodiment has basically the same structure as that of the liquid crystal display according to the previous embodiment of the present invention except for the following. That is, the liquid crystal display device according to the present embodiment further includes a bridge electrode 84 for electrically connecting storage wirings 28 and 29 of adjacent pixels to each other.

A protrusion 29a is formed at the end of the vertical portion 29 of the storage wiring 28, 29 of the present embodiment. The protruding portion 29a protrudes toward the pixel electrode 82 'and is positioned on the vertical line with the bent portion 28a of the storage wirings 28 and 29 of the adjacent pixel region.

The bridge electrode 84 electrically connects a pair of neighboring storage wirings 28, 29 around the gate wirings 22, 24. Specifically, the bridge electrode 84 connects the horizontal portion 28 of one of the pair of adjacent storage wirings 28 and 29 and the vertical portion 29 of the other one of the pair of storage wirings 28 and 29 Electrical connection is made. The bridge electrode 84 electrically connects the bent portion 28a and the protruding portion 29a of the storage wirings 28 and 29 by the bridge electrode contact holes 74 and 76. [ Thus, since the storage wirings 28 and 29 are electrically connected to each other by the bridge electrode 84, even if a part of the storage wirings 28 and 29 is disconnected in order to recover the pixel defect, Can be prevented. This will be described later.

The bridge electrode 84 is formed of substantially the same material as the pixel electrode 82 'adjacent to the bridge electrode 84 and formed on substantially the same layer. Specifically, when the pixel electrode 82 'is made of a transparent conductive material such as ITO or IZO, the bridge electrode 84 may be formed of ITO or IZO electrode.

The bridge electrode 84 may be formed for every pixel region. In other words, the pixel region is defined as a red pixel region, a green pixel region, or a blue pixel region according to the type of the corresponding color filter (see 130 in FIG. 3), and the bridge electrode 84 can be formed in both of these pixel regions have. The area of the pixel electrode 82 'in the pixel region where the bridge electrode 84 is formed may be smaller than the area of the pixel electrode 82 in the pixel region where the bridge electrode 84 is not formed. That is, the pixel electrode 82 'of the pixel region where the bridge electrode 84 is formed is cut off at a corner so as not to be electrically connected to the bridge electrode 84, and is separated from the bridge electrode 84. The bridge electrode 84 may be formed in every pixel region, but it may be formed in either of two pixel regions of the above-described pixel regions, or may be formed in only one of the pixel regions. Any one pixel region may be a blue pixel region with a minimum luminance contribution. The bridge electrode 84 is formed for every blue pixel region with the minimum luminance contribution, so that the reduction in luminance due to the formation of the bridge electrode 84 can be minimized and the spacer formed in the color filter substrate (see 2 in FIG. 3) It is possible to prevent the aperture ratio from being reduced by the spacer.

Hereinafter, a method for recovering a defective pixel when a defective pixel occurs in the liquid crystal display device of the present embodiment will be described in detail with reference to FIGS. 11 to 14. FIG. 11 is a schematic view showing a method of recovering a broken line on a data line of the thin film transistor substrate of FIG. FIG. 12 is a schematic diagram showing a method of recovering a short circuit on the data line of the thin film transistor substrate of FIG. 9; FIG. 13 is a schematic view showing a method of recovering a short circuit when the pixel electrode of the thin film transistor substrate of FIG. 9 is recovered. FIG. 14 is a schematic view showing the role of the bridge electrode in the occurrence of disconnection in the storage wiring of the thin film transistor substrate of FIG.

First, a thin film transistor substrate 1 'having a bridge electrode 84 as described with reference to FIGS. 9 and 10 is provided.

'For when the generated, the pixel defect occurs, and to restore it, disconnected portions (O ₁ as shown in FIG. 11, the broken portions (O _1), the data line 62, data corresponding to both sides around the) The laser beam is irradiated to the vertical portions 29 of the lines 62 and the storage wirings 28 and 29 to form laser short portions LS ₁ 'and LS ₂ ' 29 are made conductive and the laser beam is irradiated to the bent portions 28a of the storage wirings 28 and 29 adjacent to both sides of the disconnected data line 62 to form laser cut portions LC ₁ 'and LC ₂ ' . Since the storage lines 28 and 29 connected in the horizontal direction receive the same storage voltage signal, if the laser disconnection portions LC ₁ 'and LC ₂ ' exist in the storage lines 28 and 29 of any pixel region The storage voltage signals of the storage wirings 28 and 29 connected in the first direction are not transmitted to the subsequent pixel regions. However, the storage wirings 28 and 29 including the laser disconnection portions LC ₁ 'and LC ₂ ' are electrically connected by the storage wirings 28 and 29 and the bridge electrodes 84 arranged in the next row And the storage voltage signals are received from the storage wirings 28 and 29 arranged in the next row so that the storage voltage signals are applied to the storage wirings 28 and 29 connected to the storage wirings 28 and 29 in which the laser disconnection portions LC ₁ 'and LC ₂ ' It is possible to prevent a signal delay from occurring in the entire area.

12, all the storage wirings 28 and 29 connected to the short-circuited data line 62 are electrically connected to the data line 62 when the short-circuiting portion S ₁ 'is generated between the data line 62 and the storage wirings 28 and 29, So that pixel defects can be caused. In order to recover such a pixel defect, laser cut-off portions LC ₃ 'and LC ₄ ' are formed in two bent portions 28a located on both sides of the short-circuited data line 62 to form storage lines 28 and 29 Thereby preventing signal interference from occurring in the data lines 62, 65, 66, Since the storage wirings 28 and 29 are electrically connected to each other by the bridge electrode 84, even if the laser disconnection portions LC ₃ 'and LC ₄ ' exist in any one pixel region, The fact that the signal delay is not caused in the region is as described in Fig.

13, when a short-circuiting portion S ₂ 'occurs between the storage wiring lines 28 and 29 and the pixel electrode 82', a short-circuited portion S ₂ 'of the pixel region adjacent to both sides of the short- The laser cut-off portions LC ₅ 'and LC ₆ ' are formed in the bent portion 28a. Since the storage wirings 28 and 29 are electrically connected to each other by the bridge electrode 84, even if the laser disconnection portions LC ₅ 'and LC ₆ ' are present in any one pixel region, The fact that the signal delay is not caused in the region is as described in Fig.

14, the storage line 28 and 29, for example, the event of a disconnection portion (O _2-line portion (O _2), a horizontal portion 28) is present in the pixel region, the signal delay The storage electrodes 28 and 29 in the nth row and the storage wirings 28 and 29 in the (n + 1) th row are electrically connected to each other by the bridge electrode 84, The storage voltage signals applied to the (n + 1) th storage wirings 28 and 29 are transferred to the storage capacitors 28 and 29, respectively. Therefore, even if the n-line portion (O ₂ ') on which the pixel region of the second line is present, a signal delay does not cause the storage voltage signal that is not transmitted to the other pixel areas in the same row.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. It is therefore to be understood that the above-described embodiments and examples are illustrative in all aspects and not restrictive.

1: Thin film transistor substrate 2: Color filter substrate
3: liquid crystal layer 10: first insulating substrate
22: gate line 24: gate electrode
28: horizontal portion 28a: bent portion
29: vertical portion 29a:
30: gate insulating film 40: active layer
55, 56: resistive contact layer 62: data line
65: source electrode 66: drain electrode
67: drain electrode extension part 70: protective film
72: contact hole 74, 76: bridge electrode contact hole
82, 82 ': pixel electrode 84: bridge electrode
100: second insulating substrate 120: black matrix
130: color filter 140: common electrode

Claims (10)

A first insulating substrate;
A gate line arranged on the first insulating substrate in a substantially parallel direction to the first direction;
A storage wiring located on the first insulating substrate and including a horizontal portion arranged substantially in the first direction and a vertical portion branched substantially in the second direction from the horizontal portion;
A data line insulated from the gate line and the storage line and arranged substantially in a second direction;
A thin film transistor including an active layer, a source electrode, and a drain electrode, the thin film transistor being connected to the gate line and the data line;
A protective film on the thin film transistor and including a contact hole;
A pixel electrode located on the protective film; / RTI >
The drain electrode
At least a portion of which is located on the active layer, a second portion branched from the first portion substantially in the first direction and connected to the pixel electrode through the contact hole and a second portion substantially perpendicular to the first portion, And a third portion branched in a first direction,
Wherein the first portion, the second portion, and the third portion are located substantially sequentially along the first direction,
The width of the second portion is greater than the width of the first portion and the width of the third portion,
And the horizontal portion includes a bent portion overlapping the third portion. delete delete delete The method according to claim 1,
The bending portion
And does not overlap with the pixel electrode. The method according to claim 1,
The bending portion
Shape, a circular arc shape, and a " g '" shape. The method according to claim 1,
Wherein the vertical portion comprises:
And overlaps the pixel electrode. The method according to claim 1,
Wherein the gate line
And does not overlap the second portion and the third portion. 9. The method of claim 8,
A gate electrode connected to the gate line; Further comprising:
The gate electrode
The active layer and the first portion. 9. The method of claim 8,
Wherein the data line includes:
And does not overlap with the drain electrode.

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