KR101528973B1 - 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 - Google Patents
포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 Download PDFInfo
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- KR101528973B1 KR101528973B1 KR1020130059063A KR20130059063A KR101528973B1 KR 101528973 B1 KR101528973 B1 KR 101528973B1 KR 1020130059063 A KR1020130059063 A KR 1020130059063A KR 20130059063 A KR20130059063 A KR 20130059063A KR 101528973 B1 KR101528973 B1 KR 101528973B1
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- Prior art keywords
- light
- phase shift
- film
- photomask
- pattern
- Prior art date
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- 238000012546 transfer Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000010363 phase shift Effects 0.000 claims abstract description 109
- 238000002834 transmittance Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000012788 optical film Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 146
- 230000005540 biological transmission Effects 0.000 claims description 30
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
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- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101150104365 Tomt gene Proteins 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- -1 silicide compound Chemical class 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical class [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012126114A JP6093117B2 (ja) | 2012-06-01 | 2012-06-01 | フォトマスク、フォトマスクの製造方法及びパターンの転写方法 |
JPJP-P-2012-126114 | 2012-06-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020140080183A Division KR101999412B1 (ko) | 2012-06-01 | 2014-06-27 | 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130135751A KR20130135751A (ko) | 2013-12-11 |
KR101528973B1 true KR101528973B1 (ko) | 2015-06-15 |
Family
ID=49737384
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130059063A KR101528973B1 (ko) | 2012-06-01 | 2013-05-24 | 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 |
KR1020140080183A KR101999412B1 (ko) | 2012-06-01 | 2014-06-27 | 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020140080183A KR101999412B1 (ko) | 2012-06-01 | 2014-06-27 | 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6093117B2 (zh) |
KR (2) | KR101528973B1 (zh) |
CN (2) | CN103454851B (zh) |
TW (3) | TWI516857B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103969940A (zh) * | 2014-04-22 | 2014-08-06 | 京东方科技集团股份有限公司 | 相移掩模板和源漏掩模板 |
JP6581759B2 (ja) * | 2014-07-17 | 2019-09-25 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
JP6335735B2 (ja) * | 2014-09-29 | 2018-05-30 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
JP6259509B1 (ja) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 |
WO2018123462A1 (ja) * | 2016-12-28 | 2018-07-05 | 富士フイルム株式会社 | パターンの製造方法、カラーフィルタの製造方法、固体撮像素子の製造方法および画像表示装置の製造方法 |
CN108319103B (zh) * | 2017-01-16 | 2023-11-28 | Hoya株式会社 | 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法 |
JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
JP2019012280A (ja) * | 2018-09-19 | 2019-01-24 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
TWI712851B (zh) * | 2018-10-22 | 2020-12-11 | 日商Hoya股份有限公司 | 光罩、光罩之製造方法及電子元件之製造方法 |
JP7261709B2 (ja) * | 2019-09-13 | 2023-04-20 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及び表示装置の製造方法 |
JP7383490B2 (ja) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | フォトマスク |
JP6872061B2 (ja) * | 2020-05-11 | 2021-05-19 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06123961A (ja) * | 1992-10-12 | 1994-05-06 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法 |
JPH0798493A (ja) * | 1993-09-28 | 1995-04-11 | Toppan Printing Co Ltd | 位相シフトマスク及びその製造方法 |
KR19980016800A (ko) * | 1996-08-29 | 1998-06-05 | 김광호 | 위상반전 마스크 및 그 제조방법 |
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JPH03177841A (ja) * | 1989-12-06 | 1991-08-01 | Oki Electric Ind Co Ltd | ネガ型レジスト用ホトマスク |
JPH0311345A (ja) * | 1989-06-08 | 1991-01-18 | Oki Electric Ind Co Ltd | ホトマスク及びこれを用いたパターン形成方法 |
JPH05158214A (ja) * | 1991-03-13 | 1993-06-25 | Ryoden Semiconductor Syst Eng Kk | 位相シフトマスクおよびその製造方法 |
JP2933759B2 (ja) * | 1991-09-12 | 1999-08-16 | 川崎製鉄株式会社 | 位相シフトマスクの製造方法 |
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JP4314288B2 (ja) * | 2001-12-26 | 2009-08-12 | パナソニック株式会社 | フォトマスク |
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US7011910B2 (en) * | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
US7147975B2 (en) * | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
JP4314285B2 (ja) * | 2003-02-17 | 2009-08-12 | パナソニック株式会社 | フォトマスク |
JP3759138B2 (ja) * | 2003-02-17 | 2006-03-22 | 松下電器産業株式会社 | フォトマスク |
JP2004279484A (ja) * | 2003-03-12 | 2004-10-07 | Dainippon Printing Co Ltd | 位相シフトマスク |
JP4009219B2 (ja) * | 2003-04-10 | 2007-11-14 | 松下電器産業株式会社 | フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
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2012
- 2012-06-01 JP JP2012126114A patent/JP6093117B2/ja active Active
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2013
- 2013-05-14 TW TW104101989A patent/TWI516857B/zh active
- 2013-05-14 TW TW104136941A patent/TWI605300B/zh active
- 2013-05-14 TW TW102117083A patent/TWI475316B/zh active
- 2013-05-24 KR KR1020130059063A patent/KR101528973B1/ko active IP Right Grant
- 2013-05-30 CN CN201310208301.9A patent/CN103454851B/zh active Active
- 2013-05-30 CN CN201510763096.1A patent/CN105573046B/zh active Active
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2014
- 2014-06-27 KR KR1020140080183A patent/KR101999412B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06123961A (ja) * | 1992-10-12 | 1994-05-06 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法 |
JPH0798493A (ja) * | 1993-09-28 | 1995-04-11 | Toppan Printing Co Ltd | 位相シフトマスク及びその製造方法 |
KR19980016800A (ko) * | 1996-08-29 | 1998-06-05 | 김광호 | 위상반전 마스크 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
TWI605300B (zh) | 2017-11-11 |
JP2013250478A (ja) | 2013-12-12 |
TW201400977A (zh) | 2014-01-01 |
KR20140099427A (ko) | 2014-08-12 |
CN103454851A (zh) | 2013-12-18 |
CN103454851B (zh) | 2016-05-18 |
TW201606421A (zh) | 2016-02-16 |
TWI516857B (zh) | 2016-01-11 |
JP6093117B2 (ja) | 2017-03-08 |
CN105573046A (zh) | 2016-05-11 |
KR20130135751A (ko) | 2013-12-11 |
CN105573046B (zh) | 2019-12-10 |
TW201523123A (zh) | 2015-06-16 |
TWI475316B (zh) | 2015-03-01 |
KR101999412B1 (ko) | 2019-07-11 |
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