KR101469374B1 - High Efficiency Thermoelectric Power Generation Module and Method of Manufacturing the Same - Google Patents

Abstract

Provided are a high efficiency thermoelectric power generating module and a method for manufacturing the same. The high efficiency thermoelectric power generating module comprises: a substrate; multiple thermoelectric power generating components which are mounted in the substrate at certain intervals and form thermoelectric ingredients having P-type and N-type semiconductor properties as a lot of composite ingredient columns having nanosize diameters between an upper plate and a lower plate which are opposite to each other to form a thermoelectric element layer; and a component connecting circuit which is mounted in the substrate to connect the thermoelectric power generating components in series or in parallel. According to the present invention, by using a dynamic oblique deposition (DOD) method, the high efficiency thermoelectric power generating module and the method for manufacturing the same allow bulk and stable power production by connecting in series or in parallel and modularizing the thermoelectric power generation components having the thermoelectric element layer in which a lot of nanocolumns of the composite ingredients having alternately stacked P-type and N-type semiconductors of a nanoparticle are formed. Furthermore, the high efficiency thermoelectric power generating module and the method can be applied to various structures by changing a circuit and obtain remarkably improved power generation efficiency compared to an existing thermoelectric module. Also, the high efficiency thermoelectric power generating module and the method can remarkably reduce manufacturing costs with simplicity in production, stably produce and supply power by the thermoelectric power generating components which are located at different parts even though a component is not normally operated due to a short circuit in the component, and be directly applied to various fields such as power generation, military, medical treatment, a vehicle, an aircraft, a vessel, etc., thereby improving availability and reliability of a product.

Description

TECHNICAL FIELD [0001] The present invention relates to a high efficiency thermoelectric power generation module,

The present invention relates to a high-efficiency thermoelectric power generating module and a method of manufacturing the same, and more particularly, to a high-efficiency thermoelectric power generating module that maximizes power generation efficiency by using a thermoelectric generator having a plurality of thermoelectric element layers And a method of manufacturing the same.

Recently, as interest in new energy development, waste energy recovery, and environmental protection has increased, interest in thermoelectric devices is also increasing.

The thermoelectric phenomenon is a phenomenon in which heat is generated and cooled at both ends of a material joint by applying a current between two materials (Peltier effct), or a phenomenon in which a difference in temperature between two materials causes a seebeck effect, Or a metal or ceramic element having a function of directly converting electricity into heat.

With the Seebeck effect, heat generated by a computer or an automobile engine can be converted into electrical energy. By using the Peltier effect, various cooling systems that do not require a refrigerant can be realized.

Conventional thermoelectric elements are mainly manufactured in bulk type or nano type. However, bulk type has only a low efficiency due to low thermoelectric conversion index (ZT), and a high efficiency nano device has a problem that production cost is greatly increased.

Japanese Patent Application Laid-Open No. 2002-111082 (published on Apr. 12, 2002)

Korean Published Patent: 2007-0037583 (Published on Apr. 05, 2007)

SUMMARY OF THE INVENTION The present invention has been made to solve the conventional problems,

An object of the present invention is to provide a thermoelectric device having a thermoelectric element layer formed by forming a thermoelectric material having P-type and N-type semiconductor characteristics in a large number of composite columns having nano-sized diameters on a substrate in series or in parallel, And a high-efficiency thermoelectric power generation module capable of producing stable power and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a high efficiency thermoelectric module including: a substrate; A plurality of thermoelectric elements formed by forming a large number of thermoelectric materials having p-type and n-type semiconductor characteristics between the upper plate and the lower plate opposed to each other at regular intervals on the substrate, Power generation parts; And a component connection circuit mounted on the substrate to connect the thermoelectric generator parts in series.

Here, the component connecting circuit may include one end connected to an upper plate, which is an N-type electrode of the one thermoelectric generator part, and the other end connected to a lower plate, which is a P-type electrode of the neighboring thermoelectric generator, .

The composite material column is characterized in that nano-sized P-type semiconductor particles and N-type semiconductor particles are alternately stacked and formed as nano pillars.

Also, the composite column is formed using a DOD (Dynamic Oblique Deposition) technique.

The upper plate and the lower plate of the thermoelectric generator are formed of copper (Cu) pads.

(여기서, T는 온도차) 의 식으로 표현되고, 열전소자의 갯수 N, 기전력값 Vs, P 및 N형 반도체의 열전도도 κ, 전기저항 ρ에 의해 결정되는 것을 특징으로 한다.The performance index of the thermoelectric element layer is

(Where T is the temperature difference) and is characterized by the number N of thermoelectric elements, the electromotive force value Vs, P, and the thermal conductivity of the N-type semiconductor κ and the electrical resistance ρ.

Another embodiment of the high efficiency thermoelectric module according to one aspect of the present invention includes a substrate; A plurality of thermoelectric elements formed by forming a large number of thermoelectric materials having p-type and n-type semiconductor characteristics between the upper plate and the lower plate opposed to each other at regular intervals on the substrate, Power generation parts; And a component connection circuit mounted on the substrate and connecting the thermoelectric generator parts in parallel.

The component connecting circuit is characterized in that one end of the component connecting circuit is connected to an upper plate which is an N-type electrode of the one thermoelectric generator part and a circuit connected to a lower plate which is a P-type electrode of the other thermoelectric generator part at the other end is connected in parallel .

The composite material column is characterized in that nano-sized P-type semiconductor particles and N-type semiconductor particles are alternately stacked and formed as nano pillars.

Also, the composite material column is formed using a dynamic oblique deposition (DOD) technique.

The upper plate and the lower plate of the thermoelectric generator are formed of copper (Cu) pads.

(여기서, T는 온도차) 의 식으로 표현되고, 열전소자의 갯수 N, 기전력값 Vs, P 및 N형 반도체의 열전도도 κ, 전기저항 ρ에 의해 결정되는 것을 특징으로 한다.The performance index of the thermoelectric element layer is

(Where T is the temperature difference) and is characterized by the number N of thermoelectric elements, the electromotive force value Vs, P, and the thermal conductivity of the N-type semiconductor κ and the electrical resistance ρ.

According to another aspect of the present invention, there is provided a method of manufacturing a high efficiency thermoelectric power generating module, comprising: forming a plurality of thermoelectric materials having p-type and n-type semiconductor characteristics on a lower plate by composite columns having a nano- A step S10 of forming a thermoelectric generator part by laminating an upper plate on the thermoelectric element layer; Mounting a component connecting circuit for serially connecting the thermoelectric generator parts onto a substrate; And connecting the thermoelectric generating parts to a component connecting circuit mounted on the substrate.

Here, the composite material column in the step S10 is characterized in that p-type semiconductor particles of nano size and n-type semiconductor particles are alternately stacked and formed as nano pillars.

In the step S10, the thermoelectric element layer is formed using a dynamic oblique deposition (DOD) technique in which a p-type semiconductor and an n-type semiconductor are evaporated on a rotating lower plate at a predetermined angle to form a nano pillar.

In step S30, an upper plate, which is an N-type electrode of the one thermoelectric generation part, is connected to one end of the component connection circuit, and a lower plate, which is a P-type electrode of the neighboring other thermoelectric generation part, And a connection is established.

In another embodiment of the method of manufacturing a high efficiency thermoelectric power generating module according to another aspect of the present invention, a plurality of thermoelectric materials having p-type and n-type semiconductor characteristics on a lower plate are formed as composite columns having a nano- A step S10 of forming a thermoelectric generator part by laminating an upper plate on the thermoelectric element layer; Mounting a component connecting circuit for connecting the thermoelectric generating parts in parallel on a substrate; And connecting the thermoelectric generating parts to a component connecting circuit mounted on the substrate.

Here, the composite material column in the step S10 is characterized in that p-type semiconductor particles of nano size and n-type semiconductor particles are alternately stacked and formed as nano pillars.

In the step S10, the thermoelectric element layer is formed using a dynamic oblique deposition (DOD) technique in which a p-type semiconductor and an n-type semiconductor are evaporated on a rotating lower plate at a predetermined angle to form a nano pillar.

In the step S30, the component connecting circuit is connected to the upper plate, which is the N-type electrode of the one thermoelectric generator part, at one end, and the circuit connected to the lower plate which is the P electrode of the other thermoelectric generator parts adjacent to the other end is connected in parallel .

According to the high efficiency thermoelectric power generating module and the method of manufacturing the same of the present invention, it is possible to provide a thermoelectric generator having a large number of nano pillars of a composite material in which P type semiconductors and N type semiconductors of nanoparticles are alternately stacked using DOD (Dynamic Oblique Deposition) It is possible to produce a large capacity and stable electric power by modularizing the thermoelectric generating parts having element layers by connecting them in series or in parallel, and it is applicable to various structures through circuit modification, and remarkably improved power generation efficiency There is an effect that characteristics can be obtained.

In addition, because of the simplicity of production, it is possible to greatly reduce the manufacturing cost, and even if a part is not normally operated due to a short circuit inside the part, it is possible to produce and supply stable power by the thermoelectric parts located in other parts And can be directly applied to a variety of fields such as power generation, military and medical fields, and automobile, aircraft, and ship fields, thereby improving the usability and reliability of products.

1 is a perspective view showing a high efficiency thermoelectric module according to an embodiment of the present invention;
2 is a view showing a composite column of thermoelectric element layers in a high efficiency thermoelectric module according to an embodiment of the present invention.
3 is a view showing a structure of a thermoelectric generator part, a shape of a thermoelectric generator part and a manufacturing process thereof in a high efficiency thermoelectric generator module according to an embodiment of the present invention.
4 is a graph showing a change in power generation efficiency according to the number N of thermoelectric elements in a thermoelectric generator part of a high efficiency thermoelectric generator module according to an embodiment of the present invention.
5 is an enlarged perspective view of a component connecting circuit of a high-efficiency thermoelectric power generating module according to an embodiment of the present invention.
6 is a flowchart showing a method of manufacturing a high efficiency thermoelectric module according to an embodiment of the present invention.
7 is a perspective view illustrating a high efficiency thermoelectric module according to another embodiment of the present invention.
FIG. 8 is an enlarged perspective view of a component connecting circuit of a high-efficiency thermoelectric power generating module according to another embodiment of the present invention; FIG.
9 is a flowchart showing a method of manufacturing a high efficiency thermoelectric module according to another embodiment of the present invention.
10 is a perspective view showing a state in which the high-efficiency thermoelectric module according to the present invention is applied to various fields.

These and other objects, features and other advantages of the present invention will become more apparent by describing in detail preferred embodiments of the present invention with reference to the accompanying drawings. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a high-efficiency thermoelectric module and a method of manufacturing the same according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. For purposes of this specification, like reference numerals in the drawings denote like elements unless otherwise indicated.

FIG. 1 is a perspective view showing a high efficiency thermoelectric power generating module according to an embodiment of the present invention, FIG. 2 is a view showing a composite material column of a thermoelectric element layer in a high efficiency thermoelectric power generating module according to an embodiment of the present invention, FIG. 3 is a view showing a structure of a thermoelectric generator part, a shape of a thermoelectric generator part and a manufacturing process thereof in a high efficiency thermoelectric generator module according to an embodiment of the present invention. FIG. 5 is a perspective view showing an enlarged view of a component connecting circuit of a high efficiency thermoelectric power generating module according to an embodiment of the present invention .

1, a high efficiency thermoelectric power generating module according to an embodiment of the present invention includes a substrate 100, a thermoelectric generator 200 mounted at a predetermined interval on the substrate 100, And a component connection circuit 300 for connecting the thermoelectric generator parts in series.

The substrate 100 generates heat or an endothermic reaction when power is applied to the thermoelectric module, and is formed of a material having good thermal conductivity and having a certain strength or more. The substrate 100 may have various shapes such as a circular shape, a square shape, and a curved shape, depending on the field to which the substrate 100 is applied.

2 and 3, the thermoelectric generator 200 includes a top plate 210 and a bottom plate 220 opposed to each other, and a thermoelectric element layer 220 having a plurality of thermoelectric elements arranged between the top and bottom plates 210 and 220 230).

Here, the upper plate 210 and the lower plate 220 are made of copper (Cu) pads and guide the flow of power when the power is applied to the thermoelectric module.

The thermoelectric element layer 230 is formed using a dynamic oblique deposition (DOD) technique in which a nanofiber layer is formed by evaporating a specific material on a rotating lower plate 220 or a top plate 210 having a predetermined inclination angle. That is, a thermoelectric device having a large number of composite pillars having a nano-sized diameter by evaporating a thermoelectric material having P-type and N-type semiconductor characteristics on a lower plate 220 or a top plate 210 rotating at a constant inclination angle, Layer.

More specifically, as shown in FIG. 3, a thermoelectric element having a composite material column is formed by alternately stacking nano-sized P-type semiconductor particles and N-type semiconductor particles to form nano pillars.

At this time, P-type semiconductor particles and N-type semiconductor particles are alternately stacked, and a P-type semiconductor is provided on the upper surface of the lower plate 220 made of a copper (Cu) And an N-type semiconductor is stacked on the bottom surface. Current flows through the upper plate 210, which is an N-type electrode, and the lower plate 220, which is a P-type electrode.

The power generation performance index ZT of the thermoelectric generator part 200 can be evaluated by the following equation.

Where N is the number of thermoelectric elements, Vs is the electromotive force value, κ is the thermal conductivity of the P-type and N-type semiconductors, ρ is the electrical resistance, and T is the temperature difference.

As shown in FIG. 4, it can be seen that the power generation efficiency determined by the performance index ZT is rapidly increased by the number N of thermoelectric elements.

As described above, the thermoelectric generator part 200 is formed by forming a thermoelectric element layer 230 in which a large number of nanoparticles of a composite material in which a p-type semiconductor of nano particles and an n-type semiconductor are alternately stacked to maximize power generation efficiency do.

As shown in FIG. 5, the component connection circuit 300 is mounted on the substrate 100 so as to connect the thermoelectric generator parts 200 mounted at predetermined intervals in series.

The component connection circuit 300 is connected to the upper plate 210 which is one of the N-type electrodes of the one thermoelectric generator part 200 and the other end of which is connected to the lower plate 220 of the P- So as to be electrically connected in series. In other words, the component connecting circuit 300 is bent at the center so that one end and the other end of the component connecting circuit 300 are shifted from each other, one end of the component connecting circuit 300 is connected to the upper plate 210 of the thermoelectric generator part, the other end is connected to the lower plate 220 of the thermoelectric generator part, The thermoelectric power generating part 200 is formed to have the same height as the height of the thermoelectric power generating part 200.

Therefore, the thermoelectric power generating parts 200 mounted on the substrate 100 at regular intervals are connected in series by the component connecting circuit 300 and form a series circuit.

A method of manufacturing the high-efficiency thermoelectric module having the above-described structure will now be described.

6 is a flowchart illustrating a method of manufacturing a high-efficiency thermoelectric module according to an embodiment of the present invention.

6, a method of manufacturing a high-efficiency thermoelectric power generating module includes steps S110 of manufacturing a thermoelectric generator 200, S120 of mounting a component connecting circuit 300 for connecting components in series on a substrate 100, And connecting the thermoelectric generator part 200 to the component connection circuit 300 in step S130.

First, in step S110, the lower plate 220 made of a copper (Cu) pad is prepared to be rotated at a predetermined speed by a rotating means at a predetermined inclination angle, and then rotated at a constant speed using a DOD (Dynamic Oblique Deposition) The p-type semiconductor is evaporated on a rotating copper (Cu) pad to deposit a pillar-shaped microstructure having a nano-sized diameter, followed by evaporation of the n-type semiconductor to form a pillar-shaped microstructure having a nano-sized diameter . As described above, the p-type semiconductor and the n-type semiconductor of the nanoparticles are alternately stacked to form nano pillars (see FIG. 2).

At this time, the lamination of the nano pillars starts with the p-type semiconductor and ends with the n-type semiconductor, or conversely starts with the n-type semiconductor and is laminated to end with the p-type semiconductor. These nano pillars are arranged on the copper (Cu) pad in innumerable order to form the thermoelectric element layer 230.

Next, an upper plate 210 made of a copper (Cu) pad is laminated on the top surface of the thermoelectric element layer 230. (See Fig. 3)

In step S120, component connecting circuits 300 for serial connection of parts are mounted at predetermined intervals in accordance with the intervals of the thermoelectric generator parts 200 to be mounted on the board 100 at regular intervals.

In step S130, an upper plate 210, which is an N-type electrode of the thermoelectric generator part 200, is connected to one end of the component connection circuit 300, and a P-type And the lower plate 220 connected to the electrode is electrically connected in series, and a plurality of thermoelectric power generating parts 200 are connected in this manner so that the whole is connected in series (see FIG. 5).

FIG. 7 is a perspective view showing a high efficiency thermoelectric power generating module according to another embodiment of the present invention, and FIG. 8 is an enlarged perspective view of a component connecting circuit of a high efficiency thermoelectric power generating module according to another embodiment of the present invention.

7 and 8, a high efficiency thermoelectric power generating module according to another embodiment of the present invention includes a substrate 100, a thermoelectric generator 200 mounted at a predetermined interval on the substrate, And a component connecting circuit 400 for connecting the thermoelectric generating components in parallel.

Another embodiment of the present invention includes a component connecting circuit 400 for connecting the thermoelectric generator parts 200 mounted on the substrate 100 in parallel rather than in series connection. Here, the substrate 100 and the thermoelectric generator part 200 are made of the same description as the embodiment. Therefore, the description of the substrate and the thermoelectric power generating parts made up of the same description will be omitted.

As shown in FIG. 8, the component connection circuit 400 is mounted on the substrate 100 at regular intervals on the substrate 100 to match the spacing of the thermoelectric components 200 to be mounted on the substrate 100 at regular intervals. Circuits connected to the upper plate 210, which is an N-type electrode of the thermoelectric generator part 200 and connected to the lower plate 220, which is a P-type electrode of the other thermoelectric generator part 200 at the other end, As shown in FIG.

That is, the component connecting circuit 400 is bent at the center so that one end and the other end of the component connecting circuit 400 are mutually shifted so that one end is connected to the upper plate 210 of the thermoelectric generator part and the other end is connected to the lower plate 220 of the thermoelectric generator part, And the circuits formed to have the same height as the height of the thermoelectric power generating parts 200 are all connected and electrically connected in parallel.

As shown in FIG. 9, a method of manufacturing a high efficiency thermoelectric power generating module according to another embodiment includes a step S210 of manufacturing a thermoelectric generator 200, a step of connecting a component connecting circuit 400 for connecting components in parallel, And S230 connecting the thermoelectric generator part 200 to the component connection circuit 400. The step S230 of mounting the thermoelectric generator part 200 on the component connecting circuit 400 is described in detail with reference to FIG.

Here, the thermoelectric generator part 200 manufactured in step S210 is fabricated in the same manner as in step S110 of the method of manufacturing the thermoelectric generator module of one embodiment.

In step S220, the component connecting circuits 400 of the parallel structure are mounted and connected at predetermined intervals in accordance with the intervals of the thermoelectric generator parts 200 to be mounted on the substrate 100 at regular intervals.

In step S230, the upper plate 210, which is an N-type electrode of the one thermoelectric generator part 200, is connected to one end of the parallel component connection circuit 400, and the other thermoelectric generator part 200 is connected to the other end. And a lower plate 220 as a P-type electrode is connected to perform parallel connection of the thermoelectric generator parts 200 (see FIG. 8).

As shown in FIG. 10, the high efficiency thermoelectric power module manufactured by the above method can be applied to various shapes of panels such as a cylindrical shape, a curved shape, and a quadrangle shape, and can be used for various fields, and high efficiency power production is possible.

As described above, according to the present invention, a thermoelectric component having a thermoelectric element layer in which a large number of nano pillars of a composite material in which p-type semiconductors and n-type semiconductors of nano particles are alternately stacked is manufactured using DOD (Dynamic Oblique Deposition) And the produced thermoelectric power generation parts are connected in series or in parallel to be modularized. Thus, it is possible to produce a large capacity and stable power, and it is applicable to various structures through circuit modification, and remarkably improved power generation efficiency .

In addition, due to the simplicity of fabrication, it is possible to greatly reduce the production cost, and it is possible to produce and supply stable electric power by the thermoelectric parts located in other parts even if a part is not normally operated due to short- , Military and medical fields, and automobiles, aircraft, ships, and the like, so that the usability and reliability of the product can be improved.

Although the preferred embodiments of the present invention have been described, the present invention is not limited to the specific embodiments described above. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the appended claims, And equivalents may be resorted to as falling within the scope of the invention.

100: substrate 200: thermoelectric generator part
210: upper plate 220: lower plate
230: thermoelectric element layer 300, 400: component connecting circuit

Claims (20)

Board;
Type semiconductor is evaporated on the lower plate to form a columnar microstructure having a nano-sized diameter. Then, the N-type semiconductor is vaporized to evaporate the nano-sized semiconductor, A plurality of nano pillars are alternately stacked to form a p-type semiconductor and an n-type semiconductor, and a plurality of nano pillars are stacked on the thermoelectric layer. A thermoelectric generator component comprising an upper plate made of pads;
A component connection circuit mounted on the substrate to connect the thermoelectric components in series;
And a high-efficiency thermoelectric module. delete delete The method according to claim 1,
Wherein the thermoelectric element layer is formed using a dynamic oblique deposition (DOD) technique. delete The method according to claim 1,
The figure of merit of the thermoelectric element layer is

(Where T is the temperature difference) and is determined by the number N of thermoelectric elements, the electromotive force values Vs, P and the thermal conductivity k of the N-type semiconductor, and the electrical resistance p. Board;
Type semiconductor is evaporated on the lower plate to form a columnar microstructure having a nano-sized diameter. Then, the N-type semiconductor is vaporized to evaporate the nano-sized semiconductor, A plurality of nano pillars are alternately stacked to form a p-type semiconductor and an n-type semiconductor, and a plurality of nano pillars are stacked on the thermoelectric layer. A thermoelectric generator component comprising an upper plate made of pads;
A component connection circuit mounted on the substrate to connect the thermoelectric generating components in parallel;
And a high-efficiency thermoelectric module. delete delete 8. The method of claim 7,
Wherein the thermoelectric element layer is formed using a dynamic oblique deposition (DOD) technique. delete 8. The method of claim 7,
The figure of merit of the thermoelectric element layer is

(Where T is the temperature difference), and is determined by the number N of thermoelectric elements, the electromotive force values Vs, P and the thermal conductivity k of the N-type semiconductor, and the electrical resistance p. A plurality of thermoelectric materials having p-type and n-type semiconductor characteristics on a lower plate are formed as composite columns having nano-sized diameters to form a thermoelectric element layer, and an upper plate is laminated on the thermoelectric element layer, S110; A step S120 of mounting a component connecting circuit for connecting the thermoelectric generator parts in series on a substrate; And connecting the thermoelectric generator parts to a component connection circuit mounted on the substrate,
The step S110 may include preparing a bottom plate made of a copper (Cu) pad having a predetermined inclination angle and rotating at a constant speed; Type semiconductor to evaporate the p-type semiconductor on the rotating lower plate to form a columnar microstructure having a nano-sized diameter, followed by vaporizing the n-type semiconductor to form a columnar microstructure having a nano-sized diameter, Type semiconductor and an N-type semiconductor are alternately laminated to form a plurality of nano pillars; And stacking a top plate made of a copper (Cu) pad on the top surface of the thermoelectric element layer. delete 14. The method of claim 13,
Wherein the thermoelectric element layer is formed using a dynamic oblique deposition (DOD) technique in step < RTI ID = 0.0 > S110. ≪ / RTI > 14. The method of claim 13,
In step S130, an upper plate, which is an N-type electrode of the one thermoelectric generating component, is connected to one end of the component connecting circuit, and a lower plate, which is a P-type electrode of the neighboring other thermoelectric generating component, Wherein the thermoelectric module is formed of a thermoelectric material. A plurality of thermoelectric materials having p-type and n-type semiconductor characteristics on a lower plate are formed as composite columns having nano-sized diameters to form a thermoelectric element layer, and an upper plate is laminated on the thermoelectric element layer, S210; A step S220 of mounting a component connecting circuit for connecting the thermoelectric generator parts in parallel on a substrate; And connecting the thermoelectric generator parts to a component connection circuit mounted on the substrate,
The step S210 may include preparing a bottom plate made of a copper (Cu) pad so as to have a predetermined inclination angle and rotating at a constant speed; Type semiconductor to evaporate the p-type semiconductor on the rotating lower plate to form a columnar microstructure having a nano-sized diameter, followed by vaporizing the n-type semiconductor to form a columnar microstructure having a nano-sized diameter, Type semiconductor and an N-type semiconductor are alternately laminated to form a plurality of nano pillars; And stacking a top plate made of a copper (Cu) pad on the top surface of the thermoelectric element layer. delete 18. The method of claim 17,
Wherein the thermoelectric element layer is formed using a dynamic oblique deposition (DOD) technique in step < RTI ID = 0.0 > S210. ≪ / RTI > 18. The method of claim 17,
In the step S230, the component connecting circuit is connected to the upper plate, which is an N-type electrode of the one thermoelectric generator part, at one end, and the circuit connected to the lower plate, which is a P-type electrode of the other thermoelectric generator parts adjacent to the other end, Of the thermoelectric power generating module.

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