KR101454035B1 - Wafer grinding method - Google Patents

Wafer grinding method Download PDF

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Publication number
KR101454035B1
KR101454035B1 KR1020090000857A KR20090000857A KR101454035B1 KR 101454035 B1 KR101454035 B1 KR 101454035B1 KR 1020090000857 A KR1020090000857 A KR 1020090000857A KR 20090000857 A KR20090000857 A KR 20090000857A KR 101454035 B1 KR101454035 B1 KR 101454035B1
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KR
South Korea
Prior art keywords
grinding
chuck
finishing
holding
wafer
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KR1020090000857A
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Korean (ko)
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KR20090081323A (en
Inventor
게이이치 가지야마
다카토시 마스다
신야 와타나베
세츠오 야마모토
Original Assignee
가부시기가이샤 디스코
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Priority to JP2008012195A priority Critical patent/JP5149020B2/en
Priority to JPJP-P-2008-012195 priority
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20090081323A publication Critical patent/KR20090081323A/en
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Publication of KR101454035B1 publication Critical patent/KR101454035B1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0076Other grinding machines or devices grinding machines comprising two or more grinding tools

Abstract

The present invention provides a wafer grinding method capable of preventing the occurrence of burning by improving the so-called bitting of the wafer when the wafer ground by the roughing means is ground by the finishing grinding means .
A wafer grinding method comprising the steps of: holding a wafer on a holding surface of a chuck table having a conical holding surface; placing the grinding surface of the roughing wheel at a predetermined inclination angle with respect to the holding surface of the chuck table; A roughing step of roughing the wafer held on the holding surface of the chuck table by rotating the roughing wheel, a step of positioning the grinding surface of the finishing grinding wheel in parallel with the holding surface of the chuck table, And a finishing grinding step of finishing the wafer in the grinding area of the grinding wheel while rotating the grinding wheel in the direction toward the apex of the contact angle between the grinding face of the finishing grinding wheel and the grinding face of the wafer.

Description

[0001] WAFER GRINDING METHOD [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer grinding method for grinding a back surface of a wafer such as a semiconductor wafer.

In a semiconductor device manufacturing process, a semiconductor wafer on which a plurality of circuits such as ICs and LSIs are formed is ground to a predetermined thickness by grinding the back surface thereof before being divided into individual chips. The grinding apparatus includes a chuck table for holding a wafer and a grinding means for grinding the wafer held on the chuck table. In order to effectively grind the back surface of the wafer, a grinding apparatus having rough grinding means provided with a roughing wheel and a finishing grinding wheel with a rough grinding wheel is generally used (see, for example, Patent Document 1).

[Patent Document 1] Japanese Patent Application Laid-Open No. 2001-1261

In order to grind using the grinding apparatus provided with the roughing means and the finishing grinding means, the wafer held on the chuck table is roughly ground with the finishing allowance by the roughing means, and then the finished grinding is finishing Thereby forming a wafer with a predetermined thickness.

As described above, when the wafer ground by the roughing means is ground by the finishing grinding means, the abrasive grains of the finishing grindstone constituting the finishing grinding wheel of the finishing grinding means have a small grain diameter, There is a problem that burning occurs or the pressing force is increased according to the grinding feed, thereby deteriorating the quality of the wafer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is a main object of the present invention to provide a method for grinding a wafer ground by a roughing means by grinding by a finishing grinding means, The present invention provides a method for grinding a wafer.

According to the present invention, a wafer is held on the holding surface of a chuck table having a conical holding surface, and the wafer held on the holding surface of the chuck table is subjected to the rough grinding while rotating the rough grinding wheel constituting the rough grinding means A rough grinding step of rough grinding the grinding surface of the wheel by abrading the grinding surface of the wafer, and a grinding step of grinding the grinding surface of the finishing grinding wheel while rotating the finishing grinding wheel constituting the finishing grinding means There is provided a polishing method for a wafer which is subjected to a finish grinding process for bringing the wafer into contact with a ground surface to be polished,
Wherein the grinding surface of the rough grinding wheel is positioned at an inclination angle of 0.01 to 0.03 milli radian with respect to the holding surface of the chuck table,
Wherein the finishing grinding step includes a step of positioning the grinding surface of the finishing grinding wheel parallel to the holding surface of the chuck table and rotating the finishing grinding wheel in the grinding area of the finishing grinding wheel, And rotating it in the direction toward the apex of the contact angle of the ground surface and the ground surface of the wafer
A wafer grinding method is provided.

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According to the present invention, the wafer is held on the holding surface of the chuck table having the conical holding surface, and the wafer held on the holding surface of the chuck table is rotated while rotating the rough grinding wheel constituting the rough- A rough grinding process for rough grinding the grinding surface of the rough grinding wheel by abrading the grinding surface of the wafer to the grinding surface of the wafer, and a step for grinding the wafer subjected to the rough grinding process by grinding the finishing grinding wheel while rotating the finishing grinding wheel constituting the grinding means A method of polishing a wafer for performing a finishing grinding process in which a face is brought into contact with a surface to be grounded of the wafer to finish grinding,
Wherein the rough grinding process is performed by placing the grinding surface of the rough grinding wheel parallel to the holding surface of the chuck table,
Wherein the finishing grinding step includes the steps of positioning the grinding surface of the finishing grinding wheel at an inclination angle of 0.01 to 0.03 milli radian with respect to the holding surface of the chuck table and rotating the finishing grinding wheel in the grinding area of the finishing grinding wheel Is rotated in a direction toward a vertex of a contact angle between the grinding surface of the finishing grinding wheel and the grinding surface of the wafer.

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According to the first aspect of the wafer grinding method of the present invention, the rough grinding step is performed by placing the grinding surface of the rough grinding wheel at an inclination angle of 0.01 to 0.03 milli radian with respect to the holding surface of the chuck table, Wherein the grinding surface of the finishing grinding wheel is positioned parallel to the holding surface of the chuck table and the rotating direction of the finishing grinding wheel is set to be the grinding surface of the finishing grinding wheel, Therefore, even if the diameter of the abrasive grain of the finishing grindstone constituting the finishing grinding wheel is small, the so-called biting with respect to the wafer becomes good, and the occurrence of burning can be prevented.

According to the second invention of the wafer grinding method according to the present invention, the rough grinding process is performed by placing the grinding surface of the rough grinding wheel parallel to the holding surface of the chuck table, and the finishing grinding process is performed by grinding the finishing grinding wheel The surface of the finishing grinding wheel is positioned at an angle of 0.01 to 0.03 milli radian with respect to the holding surface of the chuck table and the rotating direction of the finishing grinding wheel is set to be the angle of contact between the grinding surface of the finishing grinding wheel and the grinding surface of the wafer Therefore, even if the particle diameter of the abrasive grains of the finishing grindstone constituting the finishing grinding wheel is small, so-called biting with respect to the wafer becomes good, and the occurrence of burning can be prevented.

Hereinafter, preferred embodiments of the wafer grinding method according to the present invention will be described in more detail with reference to the accompanying drawings.

Fig. 1 is a perspective view of a grinding apparatus for carrying out a wafer grinding method according to the present invention.

The grinding apparatus in the illustrated embodiment has an apparatus housing 2 having a substantially rectangular parallelepiped shape. 1, a stationary support plate 21 is installed at the upper right side of the apparatus housing 2. Two pairs of guide rails 22, 22, 23, 23 extending in the vertical direction are provided on the front surface of the stopper supporting plate 21. A roughing unit 3 as roughing means is movably mounted on one of the guide rails 22 and 22 so as to be vertically movable while the other of the guide rails 23 and 23 is provided with a finishing grinding unit 4 as finishing grinding means. And is mounted movably in the up and down direction.

The roughing unit 3 includes a unit housing 31, a roughing wheel 33 mounted on a wheel mount 32 rotatably mounted on the lower end of the unit housing 31, An electric motor 34 that is mounted on the upper end and is capable of forward rotation and reverse rotation drive for rotating the wheel mount 32, a support member 35 for supporting the unit housing 31, And an angle adjusting means 37 composed of a plurality of adjusting bolts 371 for attaching the supporting member 35 to the moving base 36 in an angle adjustable manner have.

The roughing wheel 33 is constituted by a grindstone base 331 and a plurality of roughing grinders 332 annularly mounted on the lower surface of the grindstone base 331 as shown in Fig. The wheel base 331 is mounted on the wheel mount 32 by the fastening bolt 333. The roughing grindstone 332 is formed, for example, by joining diamond abrasive grains having a grain diameter of about 10 占 퐉 with a resin bond, and a lower surface forms a grinding surface 332a.

1, the moving base 36 is provided with the guided rails 361 and 361 and the guided rails 361 and 361 are guided by guide rails 361 and 361 provided on the stationary support plate 21, (22, 22) so that the roughing unit (3) is movably supported in the vertical direction. The roughing unit 3 in the illustrated form is provided with a grinding and conveying mechanism 38 for moving the moving base 36 along the guide rails 22 and 22 to transmit the grinding wheel 33 . The grinding and conveying mechanism 38 includes a male screw rod 381 rotatably supported by the stationary support plate 21 in parallel with the guide rails 22 and 22 in the vertical direction, And a female screw block (not shown) which is mounted on the moving base 36 and screwed to the male screw rod 381. The male screw rod 381 is connected by a pulse motor 382, So as to move the roughing unit 3 in the vertical direction. The angle adjustment means 37 is configured such that a plurality of adjustment bolts 371 are inserted into slots (not shown) provided in the support member 35 and screwed into a female screw hole formed in the moving base 36 , And adjusts the attachment angle of the unit housing (31) by adjusting the fastening position of the long hole provided in the support member (35).

The finishing grinding unit 4 is also constructed in the same manner as the roughing unit 3 and includes a unit housing 41 and a finishing wheel 42 mounted on the wheel mount 42 rotatably mounted on the lower end of the unit housing 41. [ An electric motor 44 mounted on the upper end of the unit housing 41 and capable of forward rotation and reverse rotation for rotationally driving the wheel mount 42, A moving base 46 for mounting the supporting member 45 and a plurality of adjusting bolts 471 for attaching the supporting member 45 to the moving base 46 in an angle adjustable manner And an angle adjusting means (47).

The finish grinding wheel 43 is constituted by a grindstone base 431 and a plurality of finishing grindstones 432 annularly mounted on the lower surface of the grindstone base 431 as shown in Fig. The wheel base 431 is mounted on the wheel mount 42 by the fastening bolt 433. The finishing grindstone 432 is formed by coupling diamond abrasive grains having a grain diameter of about 1 占 퐉 with a non-triphed bond, and the lower surface forms the grinding surface 432a.

1, the moving base 46 is provided with the guided rails 461 and 461 and the guided rails 461 and 461 are guided by guide rails 461 and 461 provided on the stationary support plate 21, The finishing grinding unit 4 is movably supported in the up-and-down direction by movably fitting to the grinding wheels 23, 23. The finish grinding unit 4 in the illustrated form is provided with a grinding and conveying mechanism 48 for grinding and conveying the grinding wheel 43 by moving the moving base 46 along the guide rails 23 and 23 . The grinding and conveying mechanism 48 includes a male screw rod 481 rotatably supported by the stationary support plate 21 in parallel with the guide rails 23 and 23 in the vertical direction, And a female screw block (not shown) which is mounted on the moving base 46 and screwed to the male screw rod 481. The male screw rod 481 is driven by a pulse motor 482, So that the finishing grinding unit 4 is moved in the vertical direction. The angle adjusting means 47 is constituted such that a plurality of adjustment bolts 471 are inserted into the elongated holes provided in the supporting member 45 and screwed into the female screw holes formed in the moving base 46, , Thereby adjusting the attachment angle of the unit housing 41.

The grinding apparatus in the illustrated embodiment is provided with a turntable 5 disposed on the front side of the stationary support plate 21 so as to be substantially flush with the upper surface of the apparatus housing 2. [ The turntable 5 is formed in a disk shape having a relatively large diameter and appropriately rotates in a direction indicated by an arrow 5a by a rotation drive mechanism (not shown ). On the turn table 5, three chuck tables 6 are rotatably arranged in a horizontal plane at a phase angle of 120 degrees in the illustrated embodiment. The chuck table 6 will be described with reference to Fig.

The chuck table 6 shown in Fig. 4 is composed of a chuck table body 61 having a circular shape and a circular adsorption holding chuck 62 disposed on the upper surface of the chuck table body 61. The chuck table main body 61 is formed of a metallic material such as stainless steel and has a circular fitting recess 611 formed on its upper surface. An annular mounting shelf 611 is provided on the outer peripheral portion of the bottom surface of the fitting recess 611, (Not shown). Then, the suction holding chuck 62 formed by the porous member made of porous ceramics having innumerable suction holes in the fitting concave portion 611 is fitted. The suction holding chuck 62 fitted to the fitting concave portion 611 of the chuck table main body 61 as described above is configured such that the holding surface 621 which is the upper surface has the rotation center P1 as shown in FIG. And is conically formed as a vertex. The slope (H / R) is set to 0.00001 to 0.001 when the radius of the holding surface 621 formed in this conical shape is R and the height of the vertex is H. The chuck table body 61 is provided with a communication passage 613 communicating with the fitting concave portion 611. The communication passage 613 is in communication with a suction means not shown. Therefore, the wafer as the workpiece is placed on the holding surface 621, which is the upper surface of the suction holding chuck 62, and the wafer is attracted and held on the holding surface 621 by operating suction means (not shown). The chuck table 6 thus configured is rotated in the direction indicated by the arrow 6a by a rotation driving mechanism (not shown) as shown in Fig. The three chuck tables 6 arranged on the turn table 5 are arranged such that the turn table 5 rotates appropriately and the workpiece carry-in / out area A, the roughing area B and the finish grinding area C ), And then to the workpiece carrying-in / out area A again.

The illustrated grinding apparatus has a first cassette 7 disposed on one side with respect to the workpiece carry-in / out area A for stocking a semiconductor wafer as a workpiece before grinding, A second cassette 8 disposed on the other side with respect to the work A to stock a semiconductor wafer which is a workpiece after the grinding process and a second cassette 8 disposed between the first cassette 7 and the workpiece carry- A spinner cleaning means 11 disposed between the workpiece carry-in / carry-out region A and the second cassette 8, a second cassette 8 housed in the first cassette 7, A workpiece conveying means 12 for taking out the semiconductor wafer as a workpiece to the centering means 9 and for conveying the semiconductor wafer cleaned by the spinner cleaning means 11 to the second cassette 8, ) Is placed on the center of the semiconductor wafer, A workpiece carrying means 13 for carrying the workpiece onto the chuck table 6 located in the exit area A and a chuck table 6 placed on the chuck table 6 located in the workpiece carry- And a workpiece carry-out means (14) for transferring the semiconductor wafer to the spinner cleaning means (11). In the first cassette 7, a plurality of semiconductor wafers 15 are accommodated in a state in which the protective tape 16 is adhered to the surface. At this time, the semiconductor wafer 15 is accommodated with the back surface 15b as its upper side.

The grinding apparatus in the illustrated embodiment is configured as described above, and its operation will be described below.

The semiconductor wafer 15 which is the workpiece before grinding stored in the first cassette 7 is carried by the vertically moving and advancing and retreating operations of the workpiece conveying means 12 and placed in the centering means 9 to form six pins Lt; RTI ID = 0.0 > 91, < / RTI > The semiconductor wafer 15 placed on the centering means 9 and centered on the chuck table 6 is held by the chuck table 6 located in the workpiece carry-in / out area A by the pivotal movement of the workpiece carry- And is placed on the chuck 62. Then, suction means (not shown) is operated to suck and hold the semiconductor wafer 15 on the suction holding chuck 62. Next, the turn table 5 is rotated by 120 degrees in the direction indicated by the arrow 5a by a rotation drive mechanism (not shown), and the chuck table 6 on which the semiconductor wafer is placed is placed in the roughing area B.

The chuck table 6 holding the semiconductor wafer 15 is rotated in the direction indicated by the arrow 6a by the rotation driving mechanism (not shown) when it is located in the roughly machined area B. On the other hand, the roughing wheel 33 of the roughing unit 3 is grinding and conveyed by the grinding and conveying mechanism 38 while rotating in a predetermined direction, and is lowered by a predetermined amount. As a result, roughing is performed on the back surface 15b of the semiconductor wafer 15 on the chuck table 6 (roughing step). The semiconductor wafer 15 before grinding is placed on the chuck table 6 located in the workpiece carry-in / carry-out area A therebetween as described above. Then, the semiconductor wafer 15 is sucked and held on the chuck table 6 by operating suction means not shown. Next, the turn table 5 is rotated 120 degrees in the direction indicated by the arrow 5a to place the chuck table 6 holding the roughly machined semiconductor wafer 15 in the finish grinding area C, The chuck table 6 holding the semiconductor wafer 15 before machining is placed in the roughing area B.

In this manner, the back surface 15b of the semiconductor wafer 15 before being subjected to the roughing processing, which is held on the chuck table 6 located in the roughing area B, is subjected to roughing by the roughing unit 3, The back surface 15b of the roughly machined semiconductor wafer 15 placed on the chuck table 6 positioned in the grinding area C is subjected to finish grinding by the finishing grinding unit 4 ). Next, the turn table 5 is rotated 120 degrees in the direction indicated by the arrow 5a , and the chuck table 6 holding the semiconductor wafer 15 subjected to the finish grinding is placed in the workpiece carry-in / out area A . The chuck table 6 holding the semiconductor wafer 15 subjected to the rough machining in the rough machining area B has a finishing grinding process area C in which the workpiece W is transferred from the workpiece carry- The chuck table 6 holding the chuck table 15 moves to the roughing area B.

In the chuck table 6 returned to the workpiece carry-in / out area A via the roughing area B and the finish grinding area C, the suction holding of the finishing-ground semiconductor wafer 15 is released do. The finished semiconductor wafer 15 on the chuck table 6 placed on the workpiece carry-in / out area A is taken out to the spinner cleaning means 11 by the workpiece carrying-out means 14 . The back surface 15a (grinding surface) of the semiconductor wafer 15 conveyed to the spinner cleaning means 11 and the grinding debris adhering to the side surface of the semiconductor wafer 15 are cleaned and spin-dried. The semiconductor wafer 15 thus cleaned and spin-dried is conveyed to and stored in the second cassette 8 by the workpiece conveying means 12.

Next, a first invention of the wafer grinding method comprising the roughing step and the finishing grinding step will be described.

In the first aspect of the present invention, the roughing step is performed by placing the grinding surface of the roughing wheel at a predetermined inclination angle with respect to the holding surface of the chuck table. The first embodiment of the roughing step in the first invention will be described with reference to Fig.

5A, the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is placed on the chuck table 6 (FIG. 5A) 1 with respect to the holding surface 621 of the adsorption holding chuck 62 constituting the adsorbing and holding chuck 62. This inclination angle? 1 is preferably set to 0.01 to 0.03 milli radians. 5, the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is held on the holding surface 621 of the chuck table 6 constituting the chuck table 6 Of the back surface 15b (surface to be ground) of the semiconductor wafer 15 retained in the center of the semiconductor wafer 15 is first tilted and positioned. The grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is inclined at a predetermined inclination angle? 1 with respect to the holding surface 621 of the chuck table 6 constituting the chuck table 6, Is performed by the angle adjusting means 37 described above. The chuck table 6 is rotated in the direction indicated by the arrow 6a from the state shown in FIG. 5 (a), and the grinding wheel is moved in the direction indicated by the arrow F while rotating the roughing wheel 33 in the direction indicated by the arrow 33a . As a result, the back surface 15b (the surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 is shown in FIG. 5 (b) The grinding wheel 33 is ground in accordance with the inclination of the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 as shown in FIG. The semiconductor wafer 15 thus ground is formed so that the thickness gradually increases from the center toward the outer periphery.

Next, a second embodiment of the roughing step in the first invention will be described with reference to Fig.

6 (a), the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is placed on the chuck table 6 (FIG. 6 2 with respect to the holding surface 621 of the adsorption / holding chuck 62 constituting the adsorbing and holding chuck 62. This inclination angle? 2 is preferably set to 0.01 to 0.03 milli radians. 6, the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is fixed to the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 The outer peripheral portion of the back surface 15b (surface to be ground) of the semiconductor wafer 15 held by the outer peripheral portion of the semiconductor wafer 15 is first tilted and positioned. The grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is inclined at a predetermined inclination angle? 2 with respect to the holding surface 621 of the chuck table chuck 62, Is performed by the angle adjusting means 37 described above. 6 (a), the chuck table 6 is rotated in the direction indicated by the arrow 6a , and the roughing wheel 33 is rotated in the direction indicated by the arrow 33a , and the grinding is performed in the direction indicated by the arrow F . As a result, the back surface 15b (the surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 of the chuck table 6 constituting the chuck table 6 is formed as shown in Fig. 6B The grinding wheel 33 is ground in accordance with the inclination of the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 as shown in FIG. The semiconductor wafer 15 thus ground is formed so that its thickness gradually increases from the outer periphery toward the center.

If the roughing step of the first invention is carried out as described above, the turn table 5 is rotated by 120 degrees in the direction indicated by the arrow 5a in Fig. 1, so that the chuck holding the semiconductor wafer 15, The table 6 is placed in the finish grinding area C and the finish grinding process is performed. The finishing grinding step is a step of grinding the finishing grinding wheel by placing the grinding surface of the finishing grinding wheel parallel to the holding surface of the chuck table and rotating the finishing grinding wheel in the grinding area of the finishing grinding wheel, In the direction toward the apex of the contact angle of the ground surface of the wafer. A first embodiment of the finishing grinding step in the first invention will be described with reference to Fig.

The first embodiment of the finishing grinding process in the first invention is performed on the semiconductor wafer 15 which has been ground by the first embodiment of the roughing process in the first invention shown in Fig. 7A, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is grasped by the grinding surface 432a of the suction chuck 62 constituting the chuck table 6 And is positioned parallel to the holding surface 621. 7, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is formed so that the grinding surface 432a of the grinding surface of the chuck table 6 (The surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 of the semiconductor wafer 15. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is positioned parallel to the holding surface 621 of the chuck table 6 constituting the chuck table 6 This is performed by the angle adjusting means 47 described above. In the direction indicated by the arrow 43 a, as shown by Table 6, the chuck also from the state shown in 7 (a) in FIG. 7, the finish grinding wheel 43 is rotated in a direction shown by an arrow 6a (a) And the grinding feed is carried out in the direction indicated by the arrow F. Here, the rotation direction of the finishing grinding wheel 43 will be described. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is placed on the holding surface 432a of the chuck table 6 constituting the chuck table 6 as shown in Fig. The grinding surface 432a of the finishing grindstone 432 is positioned on the semiconductor wafer 15 held on the holding surface 621 of the chuck table 62 constituting the chuck table 6 And the predetermined contact angle (? 1: 0.01 to 0.03 milli-radians in the case of? 0.01 to 0.03 milli-radians) of the back surface 15b (surface to be ground) 7 (b), the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 is formed in a conical shape. Therefore, the back surface 15b of the semiconductor wafer 15 The grinding area S of the finishing grindstone 432 constituting the finishing grinding wheel 43 with respect to the surface to be ground (grinding target surface) is an oblique line. The rotational direction 43a of the finishing grindstone 432 constituting the finish grinding wheel 43 when the finishing grindstone 432 passes the grinding region S is set in the direction toward the apex A of the contact angle? . By setting the rotational direction of the finishing grinding wheel 43 in this manner, even if the grain diameter of the finishing grindstone 432 constituting the finishing grinding wheel 43 is small, the back surface 15b of the semiconductor wafer 15 So-called "biting" with respect to the surface is favorable, and occurrence of burning can be prevented. By performing the finishing grinding process as described above, the semiconductor wafer 15 is held on the holding surface 621 of the chuck table 6 constituting the chuck table 6 as shown in Fig. 7 (c) And is ground in parallel. Therefore, the back surface 15b (surface to be ground) of the semiconductor wafer 15 is formed to have a predetermined thickness in parallel with the surface 15a.

Next, a second embodiment of the finishing grinding step in the first invention will be described with reference to Fig.

The second embodiment of the finishing grinding process in the first invention is performed on the semiconductor wafer 15 which has been ground by the second embodiment of the roughing process in the first invention shown in Fig. 8A, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is grasped by the grinding surface 432a of the suction chuck 62 constituting the chuck table 6 And is positioned parallel to the holding surface 621. 8, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is located on the side of the chuck table 6, And comes into contact with the center of the back surface 15b (surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 for the first time. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is positioned parallel to the holding surface 621 of the chuck table 6 constituting the chuck table 6 This is performed by the angle adjusting means 47 described above. 8 (a), the chuck table 6 is rotated in the direction indicated by the arrow 6a , and the finishing grinding wheel 43 is rotated in the direction indicated by the arrow 43b as shown in FIG. 8 (a) And the grinding feed is carried out in the direction indicated by the arrow F. Here, the rotation direction of the finishing grinding wheel 43 will be described. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is held on the holding surface 432a of the chuck table 6 constituting the chuck table 6 as shown in Fig. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is positioned on the holding surface of the chuck table 6 constituting the chuck table 6 (The surface to be ground) 15b of the semiconductor wafer 15 held by the holding member 621 at a predetermined contact angle (? 2: 0.01 to 0.03 milli radians in the case of 0.01 to 0.03 milli radians). 8 (b), the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 is formed in a conical shape so that the back surface 15b of the semiconductor wafer 15 The grinding area S of the finishing grindstone 432 constituting the grinding wheel 43 with respect to the surface to be ground (the surface to be ground) is indicated by an oblique line. The rotational direction 43b when the finishing grindstone 432 constituting the grinding wheel 43 passes the grinding region S is set in the direction toward the apex B of the contact angle alpha 2 It is important. By setting the rotational direction of the grinding wheel 43 in this manner, even if the particle diameter of the abrasive grain of the finishing grindstone 432 constituting the grinding wheel 43 is small, the back surface 15b (surface to be ground) So that the occurrence of burning can be prevented. As described above, by performing the finishing grinding process, the semiconductor wafer 15 is held on the holding surface 621 of the chuck table 6 constituting the chuck table 6 as shown in Fig. 8 (c) And is ground in parallel. Therefore, the back surface 15b (surface to be ground) of the semiconductor wafer 15 is formed to have a predetermined thickness in parallel with the surface 15a.

Next, a second invention of the wafer grinding method according to the present invention will be described.

In the second invention, the roughing step is performed by placing the grinding surface of the roughing wheel parallel to the holding surface of the chuck table. The roughing step in the second invention will be described with reference to Fig.

9 (a), the grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is pressed against the chucking surface 332a of the grinding wheel 33, Is positioned parallel to the holding surface (621) of the suction holding chuck (62) constituting the table (6). The grinding surface 332a of the roughing grindstone 332 constituting the roughing wheel 33 is positioned parallel to the holding surface 621 of the chuck table chuck 62, Is performed by the angle adjusting means 47 described above. 9 (a), the chuck table 6 is rotated in the direction indicated by the arrow 6a and the grinding wheel 33 is rotated in the direction indicated by the arrow 33a while grinding in the direction indicated by the arrow F. Then , As a result, the back surface 15b (surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 is formed as shown in Fig. And is roughly parallel to the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 as shown in the figure.

If the roughing step of the second invention is carried out as described above, the turn table 5 is rotated 120 degrees in the direction indicated by the arrow 5a in Fig. 1, and the chuck holding the semiconductor wafer 15, The table 6 is placed in the finish grinding area C and the finish grinding process is performed. In this finishing grinding step, the grinding surface of the finishing grinding wheel is positioned at a predetermined inclination angle with respect to the holding surface of the chuck table, and the rotating direction of the finishing grinding wheel is set to be the grinding surface of the finishing grinding wheel And the direction of the apex of the contact angle of the ground surface of the wafer. A first embodiment of a finishing grinding process in the second invention will be described with reference to Fig.

In the first embodiment of the finishing grinding process in the second invention, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43, as shown in Fig. 10 (a) Is positioned at a predetermined inclination angle (? 1) with respect to the holding surface (621) of the suction holding chuck (62) constituting the table (6). This inclination angle? 1 is preferably set to 0.01 to 0.03 milli radians. 10, the grinding surface 432a of the finishing grindstone 432 constituting the grinding wheel 43 is held on the holding surface (surface) of the chuck table 6 constituting the chuck table 6 The center portion of the back surface 15b (the surface to be ground) of the semiconductor wafer 15 held by the first to sixth contact surfaces 621 and 621 is tilted so as to be in contact for the first time. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is fixed to the holding surface 621 of the chuck table 6 constituting the chuck table 6 at a predetermined inclination angle 1) is performed by the angle adjusting means 47 described above. The chuck table 6 is rotated in the direction indicated by the arrow 6a from the state shown in Figure 10 (a), and the grinding is performed in the direction indicated by the arrow F while rotating the finishing grinding wheel 43 in the direction indicated by the arrow 43b . Here, the rotation direction of the finishing grinding wheel 43 will be described. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is fixed to the holding surface 432a of the chuck table 6 constituting the chuck table 6 as shown in Figure 10 (a) The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is placed on the chuck table 6 as the chuck table 62 (The surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 of the holding surface 621 and a predetermined contact angle (? 3: 0.01 to 0.03 milli radians in the case of? 0.01: 0.01 to 0.03 milli radians) . 10 (b), the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 is formed in a conical shape so that the back surface 15b of the semiconductor wafer 15 The grinding area S of the finishing grindstone 432 constituting the finishing grinding wheel 43 with respect to the surface to be ground (grinding target surface) is an oblique line. The rotational direction 33b when the finishing grindstone 432 constituting the finish grinding wheel 43 passes through the grinding region S is set in the direction toward the apex B of the contact angle? . By setting the rotational direction of the finishing grinding wheel 43 in this manner, even if the grain diameter of the finishing grindstone 432 constituting the finishing grinding wheel 43 is small, the back surface 15b of the semiconductor wafer 15 So-called "biting" with respect to the surface is favorable, and occurrence of burning can be prevented. As described above, by performing the finish grinding process, the semiconductor wafer 15 is formed so that the thickness gradually increases from the center toward the outer periphery as shown in Fig. 10 (c).

Next, a second embodiment of the finishing grinding step in the second invention will be described with reference to Fig.

In the second embodiment of the finishing grinding process in the second invention, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43, as shown in Fig. 11 (a) 2 with respect to the holding surface 621 of the suction holding chuck 62 constituting the table 6. [ This inclination angle? 2 is preferably set to 0.01 to 0.03 milli radians. 11, the grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is supported by the holding surface 432a of the chuck table 6 constituting the chuck table 6, And the outer peripheral portion of the back surface 15b (surface to be ground) of the semiconductor wafer 15 held on the outer surface 621 of the semiconductor wafer 15 is tilted and brought into contact first. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is fixed to the holding surface 621 of the chuck table 6 constituting the chuck table 6 at a predetermined inclination angle 2) is performed by the angle adjusting means 47 described above. The chuck table 6 is rotated in the direction indicated by the arrow 6a from the state shown in Figure 11 (a), and the grinding is performed in the direction indicated by the arrow F while rotating the finishing grinding wheel 43 in the direction indicated by the arrow 43a . Here, the rotation direction of the finishing grinding wheel 43 will be described. The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is pressed against the holding surface 432a of the chuck table 6 constituting the chuck table 6 as shown in Figure 11 (a) The grinding surface 432a of the finishing grindstone 432 constituting the finishing grinding wheel 43 is positioned on the chuck table 6 as the chuck table 62 (The surface to be ground) of the semiconductor wafer 15 held on the holding surface 621 of the semiconductor wafer 15 with a predetermined contact angle (? 4:? 2 is 0.01 to 0.03 milli radians in the case of 0.01 to 0.03 milli radians). 11 (b), the holding surface 621 of the suction holding chuck 62 constituting the chuck table 6 is formed in a conical shape so that the back surface 15b of the semiconductor wafer 15 The grinding area S of the finishing grindstone 432 constituting the finishing grinding wheel 43 with respect to the surface to be ground (grinding target surface) is an oblique line. The rotational direction 43a when the finishing grindstone 432 constituting the finish grinding wheel 43 passes through the grinding region S is set in the direction toward the apex A of the contact angle 4 It is important to do. By setting the rotational direction of the finishing grinding wheel 43 in this manner, even if the grain diameter of the finishing grindstone 432 constituting the finishing grinding wheel 43 is small, the back surface 15b of the semiconductor wafer 15 So-called "biting" with respect to the surface is favorable, and occurrence of burning can be prevented. As described above, by performing the finish grinding process, the semiconductor wafer 15 is formed so that its thickness gradually increases from the outer periphery toward the center as shown in Fig. 11 (c).

1 is a perspective view of a grinding apparatus for carrying out a wafer grinding method according to the present invention.

2 is a perspective view of a grinding wheel constituting a roughing unit included in the grinding apparatus shown in FIG.

3 is a perspective view of a grinding wheel constituting a finishing grinding unit provided in the grinding apparatus shown in Fig.

FIG. 4 is an enlarged cross-sectional view showing a main part of a chuck table provided in the grinding apparatus shown in FIG. 1. FIG.

5 is an explanatory view showing a first embodiment of the roughing process in the first invention of the wafer grinding method according to the present invention.

6 is an explanatory view showing a second embodiment of the roughing process in the first invention of the wafer grinding method according to the present invention.

Fig. 7 is an explanatory view showing the first embodiment of the finishing grinding process in the first invention of the wafer grinding method according to the present invention. Fig.

8 is an explanatory diagram showing a second embodiment of the finishing grinding process in the first invention of the wafer grinding method according to the present invention.

Fig. 9 is an explanatory diagram showing the roughing step in the second invention of the wafer grinding method according to the present invention. Fig.

Fig. 10 is an explanatory view showing the first embodiment of the finishing grinding process in the second invention of the wafer grinding method according to the present invention. Fig.

11 is an explanatory view showing a second embodiment of a finishing grinding process in the second invention of the wafer grinding method according to the present invention.

Description of the Related Art

2: Device housing 3: Roughing unit

32: Wheel mount 33: Roughing wheel

331: Whetstone expectation 332: Roughing whetstone

37: Angle adjusting means 4: Finishing grinding unit

42: Wheel mount 43: Finishing grinding wheel

431: Whetstone base 432: Finish grinding stone

47: Angle adjusting means 5: Turn table

6: chuck table 61: chuck table body

62: suction holding chuck 7: first cassette

8: second cassette 9: centering means

11: spinner cleaning means 12: workpiece conveying means

13: workpiece carrying means 14: workpiece carrying means

15: Semiconductor wafer

Claims (4)

  1. The wafer held on the holding surface of the chuck table having the conical holding surface and the wafer held on the holding surface of the chuck table is rotated while the rough grinding wheel constituting the roughing grinding means is rotated, A rough grinding step of rough grinding the wafer in contact with the ground surface to be polished of the wafer; and a finishing grinding wheel constituting the finishing grinding means of the wafer subjected to the rough grinding step, while rotating the grinding surface of the finishing grinding wheel, To perform a finishing grinding process,
    Wherein the grinding surface of the rough grinding wheel is positioned at an inclination angle of 0.01 to 0.03 milli radian with respect to the holding surface of the chuck table,
    Wherein the finishing grinding step includes a step of positioning the grinding surface of the finishing grinding wheel parallel to the holding surface of the chuck table and rotating the finishing grinding wheel in the grinding area of the finishing grinding wheel by grinding the finishing grinding wheel And rotating in a direction toward the apex of the contact angle of the surface and the ground surface of the wafer
    Wherein the wafer is ground.
  2. The wafer held on the holding surface of the chuck table having the conical holding surface and the wafer held on the holding surface of the chuck table is rotated while the rough grinding wheel constituting the roughing grinding means is rotated, A rough grinding step of rough grinding the wafer in contact with the ground surface to be polished of the wafer; and a finishing grinding wheel constituting the finishing grinding means of the wafer subjected to the rough grinding step, while rotating the grinding surface of the finishing grinding wheel, To perform a finishing grinding process,
    Wherein the rough grinding process is performed by placing the grinding surface of the rough grinding wheel parallel to the holding surface of the chuck table,
    Wherein the finishing grinding step includes the steps of positioning the grinding surface of the finishing grinding wheel at an inclination angle of 0.01 to 0.03 milli radian with respect to the holding surface of the chuck table and rotating the finishing grinding wheel in the grinding area of the finishing grinding wheel Wherein the polishing is performed in a direction toward a vertex of a contact angle between the grinding surface of the finishing grinding wheel and the grinding surface of the wafer.
  3. delete
  4. delete
KR1020090000857A 2008-01-23 2009-01-06 Wafer grinding method KR101454035B1 (en)

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CN101491880B (en) 2012-05-30
TW200933724A (en) 2009-08-01
TWI483302B (en) 2015-05-01
US20090186562A1 (en) 2009-07-23
US8025556B2 (en) 2011-09-27
KR20090081323A (en) 2009-07-28
CN101491880A (en) 2009-07-29
JP2009176848A (en) 2009-08-06

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