KR101441634B1 - Optical Device for Overcomimg Misfit Dislocation and Method for Manufacturing the Same - Google Patents

Optical Device for Overcomimg Misfit Dislocation and Method for Manufacturing the Same Download PDF

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KR101441634B1
KR101441634B1 KR1020120057159A KR20120057159A KR101441634B1 KR 101441634 B1 KR101441634 B1 KR 101441634B1 KR 1020120057159 A KR1020120057159 A KR 1020120057159A KR 20120057159 A KR20120057159 A KR 20120057159A KR 101441634 B1 KR101441634 B1 KR 101441634B1
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South Korea
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formed
layer
tunnel diode
substrate
th
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KR1020120057159A
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Korean (ko)
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KR20130133983A (en
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전동환
김영조
허종곤
박원규
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(재)한국나노기술원
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The present invention relates to an optical device capable of minimizing device performance degradation due to lattice defects by forming a tunnel diode in a region where a lot of lattice defects are formed when a buffer is used on an arbitrary substrate, A thin film formed on the substrate, the thin film including a misfit dislocation due to a difference in lattice constant from the substrate; and a lattice mismatch potential And a lower electrode formed on a lower portion of the substrate, and an upper electrode formed on the element layer. According to another aspect of the present invention, there is provided a tunnel diode comprising: a tunnel diode formed on an upper portion of a thin film including a tunnel diode; do.

Description

TECHNICAL FIELD [0001] The present invention relates to an optical device for overcoming misalignment dislocation,

The present invention relates to an optical device for overcoming a lattice mismatch potential and a method of manufacturing the same, and more particularly, to a device for overcoming a lattice mismatch potential when a buffer is used on an arbitrary substrate, a tunnel diode is formed in a region where many lattice defects are formed, And to a method of manufacturing the same.

BACKGROUND ART Compound semiconductor devices have been utilized in high performance light emitting, receiving and electronic devices based on their excellent optical and electrical properties and the ability to laminate various materials. In particular, compound semiconductor solar cells achieve much higher efficiency than other solar cells, and they are fused with light concentrating technology with high reliability, achieving efficiency over 40%.

However, there is a drawback that the manufacturing cost is increased due to the high unit price of the material. In order to overcome these problems, various methods for lowering the manufacturing cost by using the Si substrate have been proposed. However, due to the difference in lattice constant between the Si substrate and the grown compound semiconductor, a misfit dislocation defect Can not be avoided, and a vertical device, which must be included as a part of the device, has a problem that the performance of the device is reduced.

Generally, misfit dislocations due to lattice constant difference between the substrate and the growth material occur above the critical thickness. Typical Si and GaAs show a lattice constant difference of 4%, and misfit dislocations are inevitable for fabricating devices with a thickness of ㎛.

The misfit dislocation has a high density right above the substrate. If the light emitting layer and the light receiving layer are formed in such a region, the device performance is seriously damaged. This is because the carrier lifetime due to the defect is lowered and must be considered.

FIG. 1 is a schematic of a vertical device including misfit dislocations in an active layer (left) and a misfit dislocation TEM image of a buffer using SiGe (right). The structure of a device having misfit dislocation due to general lattice mismatch It is a cross-sectional photograph.

When misfit dislocations are included in the active layer, the lifetime of the minority carriers is shortened, so that the performance of the semiconductor device, which is highly affected by the short life, is also inferior.

Particularly, in the case of a compound semiconductor solar cell, when a Ge-containing material is used as a buffer in a p-type Si substrate, an auto-doped n-Ge layer can be formed as shown in FIG. 2, so that light absorbed in the misfit dislocation layer Current can be converted into a current to adversely affect the current matching, and also a serious decrease in the open circuit voltage can be involved.

In order to solve the above problems, in the present invention, when a buffer is used on an arbitrary substrate, a tunnel diode is formed in a region where many lattice defects are formed, thereby providing an optical device capable of avoiding degradation of device performance due to lattice defects It has its purpose.

That is, the misfit dislocation area having a short carrier lifetime is separated and isolated from the active area of the device where light emission and light reception occur, so that the misfit dislocation layer is merely a resistor, and light receiving and light emitting devices are formed thereon, The present invention provides an optical element that can be used as a light source.

It is another object of the present invention to provide a manufacturing method for manufacturing such an optical device.

According to an aspect of the present invention, there is provided a thin film transistor including a substrate, a thin film formed on the substrate and including a misfit dislocation due to a difference in lattice constant between the substrate and the substrate, A tunnel diode formed on an upper portion of the thin film including the lattice mismatch potential so as to operate only on the tunnel diode, an element layer formed on the tunnel diode, a lower electrode formed on the lower portion of the substrate, An electrode made of an electrode is provided.

A buffer layer may further be provided on the upper or lower portion of the tunnel diode.

In addition, a buffer layer may be further formed under the device layer.

In the present invention, the substrate may be composed of at least one member selected from the group consisting of Group 4, Group 3-5, and Group 2-6 elements.

In the present invention, the element layer may include a light absorbing layer which absorbs the wavelength band of sunlight.

In addition, the device layer may include a light-emitting layer emitting light in a wavelength band of an LED or an LD.

In the present invention, the substrate is made of a Si substrate, and the thin film may be formed of a material containing Ge.

In addition, the substrate may be formed of a Si substrate, and the thin film may be formed of a material containing Group 3-5 elements.

In the present invention, the device layer may comprise a solar cell layer, and the solar cell layer may comprise a single junction or multiple junctions.

An n-th tunnel diode is formed on the device layer, an n-th device layer is formed on the n-th tunnel diode, an n + 1 tunnel diode is formed on the n-th device layer, An (n + 1) -th element layer is formed on the upper part of the +1 tunnel diode to form multiple junctions, and n may be an integer of 2 or more.

According to another aspect of the present invention, there is provided a method of manufacturing an optical device including a substrate, an upper electrode, and a lower electrode, the method comprising the steps of: forming a misfit dislocation Forming a tunnel diode on an upper portion of the thin film including the tunnel diode; and forming an element layer on the tunnel diode.

In the present invention, it is preferable that the device layer comprises a solar cell cell layer, an n-th tunnel diode is formed on the device layer, an n-th device layer is formed on the n-th tunnel diode, An (n + 1) th tunnel diode is formed and an (n + 1) th element layer is formed on the (n + 1) th tunnel diode to form multiple junctions.

As described above, according to the optical element of the present invention, there is an effect that the performance of the element can be prevented from being deteriorated by making it dependent only on the charge transfer of the majority carriers at the portion where misfit dislocations with high defect density are generated.

Figure 1 is a vertical device schematic (left) containing misfit dislocations in the active layer (left) and a misfit dislocation TEM image of the buffer using SiGe (right).
FIG. 2 is a cross-sectional view of a conventional p-type Si substrate and a compound semiconductor solar cell using a material containing Ge as a buffer.
FIG. 3 is a vertical device schematic diagram (left) and a misfit dislocation TEM image (right) for minimizing the influence of misfit dislocations according to an embodiment of the present invention. FIG.
4 is a vertical schematic (left) and misfit dislocation TEM photograph (right) of a solar cell according to another embodiment of the present invention.
5 is a structural view of a single junction solar cell according to the present invention.
6 is a graph of current-voltage characteristics of the single junction solar cell of FIG.
FIG. 7 is a view showing an embodiment of a double and single junction solar cell to which the present invention is applied.
FIG. 8 is a view showing one embodiment of a triple and quadruple junction solar cell to which the present invention is applied.
FIG. 9 is a view showing an epitaxial structure of the single and double junction solar cells of FIG. 7; FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification.

FIG. 3 is a vertical device schematic diagram (left) and a misfit dislocation TEM image (right) for minimizing the influence of misfit dislocations according to an embodiment of the present invention. FIG.

The optical device of the present invention is intended to solve the problem that the performance of a semiconductor device which is greatly influenced by the short life of the minority carriers is shortened when a misfit dislocation layer is included in the active layer, and a tunnel diode is formed on the misfit dislocation layer the misfit dislocation layer is operated only by a simple resistance so that the performance of the semiconductor device is not deteriorated.

The optical element 100 of the present invention includes a substrate 110, a thin film 130, a tunnel diode 140, an element layer 160, a lower electrode formed under the substrate 110, And an upper electrode formed on the substrate.

The substrate 110 may include at least one selected from the group consisting of a compound including a Group 4 element, a Group 3-5 element, and a Group 6 element. For example, the substrate 110 may be made of one selected from the group consisting of Si, GaAs, sapphire, and glass.

A thin film 130 including a misfit dislocation 120 having a lattice constant different from that of the substrate 110 is formed on the substrate 110.

The misfit dislocation 120 is caused by a difference in lattice constant between the substrate 110 and the growth material. When the substrate 110 is made of a Si substrate, the thin film 130 is made of a material including Ge , Or 3 (III)-5 (V) group elements, or a combination of these materials. That is, when a Ge layer or a SiGe layer is grown on the Si substrate 110, a lattice mismatch potential 120 is formed while being grown automatically.

A tunnel diode (140) is formed on the thin film (130).

As described above, the tunnel diode layer 140 separates the misfit dislocation 120 from the active layer 150 and allows the misfit dislocation 120 to operate only with a simple resistance.

A buffer layer 150 is formed on or under the tunnel diode layer 140. The buffer layer 150 is doped sufficiently in the same manner as the tunnel diode layer 140 so that the misfit dislocation layer Thereby reliably separating the active layer 120 from the element layer 160 which is an active layer.

In the present invention, the device layer 160 may include a light absorbing layer that absorbs the wavelength band of sunlight. That is, the device layer 160 may be formed of a solar cell layer, and the solar cell layer may be a single junction or a multiple junction.

As shown in FIG. 4, at least one element selected from the group consisting of a compound consisting of a compound containing a Group 4 element, a Group 3-5 element and a Group 2-6 element, for example, Si, GaAs, A thin film 330 including a misfit dislocation layer 320 is formed by growing a Ge material on a substrate 310 made of one kind of material selected from the group consisting of glass, A layer 340 and a buffer layer 350 are formed and a solar cell layer 360 is formed thereon.

At this time, the single junction or multiple junction is preferably made of a GaInP / GaAs material.

When the solar cell cell layer is multi-junction, an n-th tunnel diode is formed on the device layer 360, an n-th device layer is formed on the n-th tunnel diode, +1 tunnel diode is formed on the (n + 1) th tunnel diode, and an (n + 1) th element layer is formed on the (n + 1) th tunnel diode to achieve multiple junctions. Here, the n may be an integer of 2 or more.

7 to 9, in the case of a stacked type solar cell, solar cells suitable for respective wavelength bands are vertically arranged in the order of higher absorption energy band. At this time, the tunnel diode layer 340 is divided into different absorption bands Thereby enabling the fabrication of a multi-junction solar cell by a single thin film deposition process.

As described above, the present invention is applicable to all multi-junction solar cells. The difference from conventional solar cells is that the misfit dislocation region operates with a simple resistance. That is, in the multi-junction solar cell to which the present invention is applied, no phenomenon occurs in the misfit dislocation layer 120, and the recombination phenomenon repeatedly takes place in that place, and only the concentration increases. At this time, the misfit dislocation layer 120 merely resists . The misfit dislocation layer 120 is present due to the buffer layer 150, which is substantially a wide bandgap isolation layer, but it can no longer reach the solar cell layer.

In addition, the device layer 160 includes a light-emitting layer that emits a wavelength band of an LED or an LD, and the optical device of the present invention may be a light-emitting device.

Unlike the structure in which the tunnel diode layer 140 for separating the device layer 160 as the active layer and the misfit dislocation layer 120 is formed on the thin film 130 as described above as an embodiment of the present invention, The tunnel diode 140 may be positioned above the misfit dislocation layer 120 in the tunnel 130.

That is, a compound consisting of a compound consisting of a compound containing a Group 4 element, a Group 3-5 element and a Group 2-6 element, for example, Si, GaAs, sapphire and glass A misfit dislocation layer 120 is formed by growing a Ge material on the substrate 110 made of one kind of material and a tunnel diode layer 140 is formed on the misfit dislocation layer 120.

In other words, a thin film 130 including a misfit dislocation layer 120 and a tunnel diode layer 140 is formed on a substrate 110, a buffer layer 150 is formed on the thin film 130, And an element layer 160 is formed thereon.

Therefore, a buffer layer 150 may be formed on or below the tunnel diode layer 140, and may be formed below the device layer 160.

<Examples>

4, a misfit dislocation layer 320 is formed on a Si substrate 310, and a tunnel diode 340 and a solar cell layer 360 are formed on the misfit dislocation layer 320, respectively.

The efficiency of the solar cell manufactured in the above example was measured, and the results are shown in the simulation results of FIG.

Referring to the simulation results of FIG. 6, it was confirmed that the conversion efficiency of 26% was obtained as shown in the graph of the current-voltage characteristic of the solar cell. As a result of manufacturing a solar cell having the structure of the present invention, the dependence on only the charge transfer of a majority carrier in a portion where a misfit dislocation layer having a high bonding density is generated has been found.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the exemplary embodiments are defined by the appended claims rather than by the foregoing description. But may be embodied in the spirit and scope of the present invention as embodied in the appended claims.

110, 310: substrate
120, 320: misfit dislocation layer
130, 330: thin film
140, 340: Tunnel diode layer
150, 350: buffer layer
160: Element layer
360: solar cell layer

Claims (14)

  1. Board;
    A thin film formed on the substrate and including a misfit dislocation due to a difference in lattice constant from the substrate;
    A tunnel diode formed on top of the thin film including the lattice mismatch potential such that the lattice mismatch potential region is operated only as a resistor;
    An element layer formed on the tunnel diode;
    A lower electrode formed under the substrate; And
    An upper electrode formed on the element layer;
    .
  2. The method according to claim 1,
    And a buffer layer is further formed on an upper portion or a lower portion of the tunnel diode.
  3. The method according to claim 1,
    And a buffer layer below the device layer.
  4. The method according to claim 1,
    Wherein the substrate comprises at least one member selected from the group consisting of compounds of group 4, group 3-5, and group 2-6 elements.
  5. The method according to claim 1,
    Wherein the element layer comprises a light absorbing layer which absorbs the wavelength band of sunlight.
  6. The method according to claim 1,
    Wherein the device layer comprises a light-emitting layer that emits light in the wavelength band of the LED or the eld.
  7. The method according to claim 1,
    Wherein the substrate is made of a Si substrate,
    Wherein the thin film is formed of a material containing Ge.
  8. The method according to claim 1,
    Wherein the substrate is made of a Si substrate,
    Wherein the thin film is formed of a material including a Group 3-5 element.
  9. The method according to claim 1,
    The device layer comprises a solar cell layer,
    Wherein the solar cell layer comprises a single junction or multiple junctions.
  10. The method of claim 9,
    An n-th tunnel diode is formed on the element layer,
    An n-th element layer is formed on the n-th tunnel diode,
    An (n + 1) th tunnel diode is formed on the n-th element layer,
    An n + 1-th element layer is formed on the (n + 1) th tunnel diode to form a multi-junction,
    And n is an integer of 2 or more.
  11. A method of fabricating an optical device comprising a substrate, an upper electrode, and a lower electrode,
    Forming a tunnel diode on top of the thin film including a misfit dislocation with a difference in lattice constant from the substrate; And
    Forming an element layer over the tunnel diode;
    / RTI &gt;
  12. The method of claim 11,
    Further comprising forming a buffer layer on the upper or lower portion of the tunnel diode.
  13. The method of claim 11,
    And forming a buffer layer below the device layer.
  14. The method of claim 11,
    The device layer comprises a solar cell layer,
    An n-th tunnel diode is formed on the element layer,
    An n-th element layer is formed on the n-th tunnel diode,
    An (n + 1) th tunnel diode is formed on the n-th element layer,
    An n + 1-th element layer is formed on the (n + 1) th tunnel diode to form a multi-junction,
    Wherein n is an integer of 2 or more.

KR1020120057159A 2012-05-30 2012-05-30 Optical Device for Overcomimg Misfit Dislocation and Method for Manufacturing the Same KR101441634B1 (en)

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KR101960265B1 (en) * 2017-12-29 2019-03-20 (재)한국나노기술원 Manufacturing Method of Solar Cell for Luminescent Solar Concentrator Device and Luminescent Solar Concentrator Devices using Solar Cell thereby

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964386A (en) * 1995-08-18 1997-03-07 Japan Energy Corp Multijunction solar cell
JP2002050781A (en) 2000-08-02 2002-02-15 Toyota Motor Corp Tandem solar cell and manufacturing method thereof
US6876010B1 (en) 1997-06-24 2005-04-05 Massachusetts Institute Of Technology Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
KR20120012719A (en) * 2010-08-03 2012-02-10 전북대학교산학협력단 Solar cells with III-V compound semiconductor quantum dots as absorption layer and method of preparing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964386A (en) * 1995-08-18 1997-03-07 Japan Energy Corp Multijunction solar cell
US6876010B1 (en) 1997-06-24 2005-04-05 Massachusetts Institute Of Technology Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
JP2002050781A (en) 2000-08-02 2002-02-15 Toyota Motor Corp Tandem solar cell and manufacturing method thereof
KR20120012719A (en) * 2010-08-03 2012-02-10 전북대학교산학협력단 Solar cells with III-V compound semiconductor quantum dots as absorption layer and method of preparing the same

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