KR101413079B1 - (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물 - Google Patents

(메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물 Download PDF

Info

Publication number
KR101413079B1
KR101413079B1 KR1020100097834A KR20100097834A KR101413079B1 KR 101413079 B1 KR101413079 B1 KR 101413079B1 KR 1020100097834 A KR1020100097834 A KR 1020100097834A KR 20100097834 A KR20100097834 A KR 20100097834A KR 101413079 B1 KR101413079 B1 KR 101413079B1
Authority
KR
South Korea
Prior art keywords
group
chemical formula
meth
acrylate
formula
Prior art date
Application number
KR1020100097834A
Other languages
English (en)
Korean (ko)
Other versions
KR20120036126A (ko
Inventor
김태호
양영수
이준호
최승집
최상준
Original Assignee
제일모직 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제일모직 주식회사 filed Critical 제일모직 주식회사
Priority to KR1020100097834A priority Critical patent/KR101413079B1/ko
Priority to PCT/KR2010/008804 priority patent/WO2012046917A1/fr
Priority to TW100105770A priority patent/TW201215623A/zh
Publication of KR20120036126A publication Critical patent/KR20120036126A/ko
Application granted granted Critical
Publication of KR101413079B1 publication Critical patent/KR101413079B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/12—Esters of monohydric alcohols or phenols
    • C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020100097834A 2010-10-07 2010-10-07 (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물 KR101413079B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020100097834A KR101413079B1 (ko) 2010-10-07 2010-10-07 (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물
PCT/KR2010/008804 WO2012046917A1 (fr) 2010-10-07 2010-12-09 Polymère à base de (méth)acrylate et composition de résine photosensible incluant ledit polymère
TW100105770A TW201215623A (en) 2010-10-07 2011-02-22 (Meth) acrylate-based polymer and photosensitive resin composition including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100097834A KR101413079B1 (ko) 2010-10-07 2010-10-07 (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물

Publications (2)

Publication Number Publication Date
KR20120036126A KR20120036126A (ko) 2012-04-17
KR101413079B1 true KR101413079B1 (ko) 2014-06-30

Family

ID=45927893

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100097834A KR101413079B1 (ko) 2010-10-07 2010-10-07 (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물

Country Status (3)

Country Link
KR (1) KR101413079B1 (fr)
TW (1) TW201215623A (fr)
WO (1) WO2012046917A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10332740B2 (en) 2016-12-14 2019-06-25 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer
KR20230121331A (ko) 2022-02-11 2023-08-18 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 표시장치
KR102689508B1 (ko) * 2023-09-26 2024-07-29 주식회사 씨지피머트리얼즈 나프탈렌 구조를 갖는 방향족 화합물, 이로 이루어지는 감광성 고분자, 및 이를 포함하는 레지스트 조성물

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106716257B (zh) * 2014-09-30 2019-12-24 富士胶片株式会社 图案形成方法、抗蚀剂图案及电子元件的制造方法
EP4200344A1 (fr) * 2020-08-18 2023-06-28 Henkel AG & Co. KGaA Accélérateurs de durcissement pour compositions durcissables par voie anaérobie
KR102503675B1 (ko) * 2020-12-24 2023-02-23 최상준 감광성 고분자 및 포토레지스트 조성물

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002303975A (ja) 2000-12-05 2002-10-18 Nippon Shokubai Co Ltd 感光性樹脂組成物およびその用途
KR20090054323A (ko) * 2007-11-26 2009-05-29 제일모직주식회사 신규 공중합체 및 이를 포함하는 레지스트 조성물

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100263906B1 (ko) * 1998-06-02 2000-09-01 윤종용 백본이 환상구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
JP2000119992A (ja) * 1998-10-14 2000-04-25 Nippon Kayaku Co Ltd 紙用活性エネルギー線硬化性樹脂組成物及びその硬化物
KR20050078320A (ko) * 2004-01-29 2005-08-05 주식회사 동진쎄미켐 감광성 고분자 수지 및 이를 포함하는 화학증폭형포토레지스트 조성물
KR101253292B1 (ko) * 2005-08-09 2013-04-10 주식회사 동진쎄미켐 감광성 고분자 및 이를 포함하는 포토레지스트 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002303975A (ja) 2000-12-05 2002-10-18 Nippon Shokubai Co Ltd 感光性樹脂組成物およびその用途
KR20090054323A (ko) * 2007-11-26 2009-05-29 제일모직주식회사 신규 공중합체 및 이를 포함하는 레지스트 조성물

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10332740B2 (en) 2016-12-14 2019-06-25 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer
US11380537B2 (en) 2016-12-14 2022-07-05 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer
KR20230121331A (ko) 2022-02-11 2023-08-18 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 표시장치
KR102689508B1 (ko) * 2023-09-26 2024-07-29 주식회사 씨지피머트리얼즈 나프탈렌 구조를 갖는 방향족 화합물, 이로 이루어지는 감광성 고분자, 및 이를 포함하는 레지스트 조성물

Also Published As

Publication number Publication date
KR20120036126A (ko) 2012-04-17
TW201215623A (en) 2012-04-16
WO2012046917A1 (fr) 2012-04-12

Similar Documents

Publication Publication Date Title
EP2360527B1 (fr) Procédé de formation de motifs utilisant la lithographie par faisceau d'électrons ou par EUV
US6207342B1 (en) Chemically amplified resist material and process for the formation of resist patterns
KR101156975B1 (ko) 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트 조성물
KR101464215B1 (ko) 포지티브 레지스트 조성물 및 이것을 사용한 패턴형성방법
KR20160122085A (ko) 신규 오늄염 화합물을 이용한 화학 증폭형 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP5794360B2 (ja) 化学増幅ポジ型レジスト組成物及びパターン形成方法
KR101413079B1 (ko) (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물
KR20120052884A (ko) 염기 반응성 포토애시드 발생제 및 이를 포함하는 포토레지스트
KR20190134516A (ko) 화학 증폭 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
KR20100080146A (ko) (메트)아크릴레이트 화합물, 감광성 폴리머 및 레지스트 조성물
JP6003873B2 (ja) レジスト材料並びにこれを用いたパターン形成方法
JP2007502895A (ja) 新規な感光性二層組成物
KR20130079270A (ko) 지환족 모노머, 이를 포함하는 폴리머, 및 이 폴리머를 포함하는 포토레지스트 조성물
KR101910829B1 (ko) 포토리소그래피용 오버코트 조성물 및 방법
KR100933983B1 (ko) 우수한 식각 내성 특성을 갖는 레지스트 조성물
JP2007004072A (ja) 感放射線性樹脂組成物
US7129023B2 (en) Photoresist polymer and photoresist composition containing the same
KR101184205B1 (ko) 감광성 화합물, 감광성 고분자 수지 및 이를 포함하는 화학증폭형 포토레지스트 조성물
KR20120070322A (ko) (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물
KR102587517B1 (ko) 감광성 고분자 및 포토레지스트 조성물
US8124311B2 (en) Photosensitive molecular compound and photoresist composition including the same
KR101190527B1 (ko) 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트조성물
KR20120036125A (ko) (메타)아크릴레이트계 고분자 및 이를 포함하는 감광성 수지 조성물
JP2022123536A (ja) 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法
JP2001042530A (ja) ポジ型感放射線性樹脂組成物

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20170526

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee