KR101344168B1 - Polyimide Removing compositions - Google Patents

Polyimide Removing compositions Download PDF

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KR101344168B1
KR101344168B1 KR1020060131901A KR20060131901A KR101344168B1 KR 101344168 B1 KR101344168 B1 KR 101344168B1 KR 1020060131901 A KR1020060131901 A KR 1020060131901A KR 20060131901 A KR20060131901 A KR 20060131901A KR 101344168 B1 KR101344168 B1 KR 101344168B1
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polyimide
hydroxide
group
composition
weight
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KR20080057944A (en
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김태희
윤효중
홍헌표
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동우 화인켐 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C08K5/053—Polyhydroxylic alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/06—Ethers; Acetals; Ketals; Ortho-esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/17—Amines; Quaternary ammonium compounds
    • C08K5/19—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L1/00—Compositions of cellulose, modified cellulose or cellulose derivatives
    • C08L1/02—Cellulose; Modified cellulose
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Abstract

본 발명은, (A) 4급 암모늄수산화물, (B) 글리콜 에테르계 용제, (C) 당류 및 당알코올류로 이루어진 군으로부터 선택되는 1종 이상의 성분, 및 (D) 물을 포함하는 폴리이미드 리무버 조성물에 관한 것이다.The present invention is a polyimide remover comprising (A) a quaternary ammonium hydroxide, (B) a glycol ether solvent, (C) at least one component selected from the group consisting of sugars and sugar alcohols, and (D) water. It relates to a composition.

본 발명은 폴리이미드막의 제거 성능이 우수할 뿐만 아니라, 알루미늄 부식성이 없으며, 더불어서, 컬럼스페이서의 탄성에 영향을 주지 않고 부식도 최소화되는 폴리이미드 리무버 조성물을 제공한다. The present invention provides a polyimide remover composition which not only has excellent removal performance of the polyimide film but also has no aluminum corrosion resistance and, in addition, does not affect the elasticity of the column spacer and minimizes corrosion.

폴리이미드막, 알루미늄 부식, 암모늄수산화물 Polyimide Membrane, Aluminum Corrosion, Ammonium Hydroxide

Description

폴리이미드 리무버 조성물{Polyimide Removing compositions}Polyimide Removing Compositions

본 발명은 폴리이미드 리무버 조성물(removing composition)에 관한 것으로, 보다 상세하게는 반도체소자 및 액정표시소자의 제조공정에 있어서 기판으로부터 경화된 폴리이미드막을 제거하기 위한 리무버 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyimide remover composition, and more particularly, to a remover composition for removing a cured polyimide film from a substrate in a manufacturing process of a semiconductor device and a liquid crystal display device.

종래부터, 알칼리 세정제는 중성 세정제에 비해 유기물, 무기물, 파티클 등을 제거하는 능력이 우수하기 때문에 전자부품, 금속부품, 세라믹부품 등의 생산현장에서 폭넓게 사용되고 있다. 그러나, 알칼리 세정제는 알루미늄 등의 비철금속을 용이하게 부식시키기 때문에 알루미늄이 부품의 일부 또는 전부에 사용되고 있는 전자부품 등의 세정에는 사용할 수 없는 것이 현실이다.BACKGROUND ART Alkaline cleaners have been widely used in the production of electronic parts, metal parts, ceramic parts, etc. because of their superior ability to remove organic matter, inorganic matter, particles, etc., compared to neutral detergents. However, since the alkali cleaners easily corrode nonferrous metals such as aluminum, it is a reality that aluminum cannot be used for cleaning electronic parts and the like in which part or all of the parts are used.

예를 들면, 전자부품 특히 액정패널의 폴리이미드 배향막은 지금까지 수평배향 타입이었지만, 광시야각 액정패널의 요망이 강해짐에 따라 수직배향 타입의 폴리이미드 배향막이 증가하는 추세에 있다. 수평배향 타입의 폴리이미드 배향막 유리기판은 완전소성(소성온도: 약 180℃) 전의 반소성 상태(약 80℃에서 탈용제한 반경화막)라면, 그 불량품은 N-메틸피롤리돈 등의 용제로 알루미늄 박막(배선)을 부식하지 않고 배향막을 박리할 수 있지만, 수직배향 타입의 폴리이미드 배향막의 경우에는 상기 반소성 상태이더라도 용제로는 폴리이미드 배향막(반소성)을 박리할 수 없기 때문에 알칼리 세정제를 사용하여 배향막 박리를 행하고 있다(일본 특개 평6-306661호 참조). 이 때, 유리기판의 알루미늄 박막(배선)은 부식하기 때문에 알루미늄 박막부분을 왁스 등으로 보호하여 세정하고, 이어서 탄화수소 등의 용제로 왁스를 제거하여 기판을 재생시키거나, 배향막과 동시에 알루미늄 박막을 완전하게 박리·용해시키고 나서 유리기판만을 재생시키는 방법이 취해지고 있어, 원재료의 낭비 및 생산성 저하를 야기하는 원인이 되고 있다. For example, the polyimide alignment film of an electronic component, especially a liquid crystal panel, has been a horizontal alignment type until now, but as the demand of a wide viewing angle liquid crystal panel becomes stronger, the vertical alignment type polyimide alignment film is increasing. If the horizontal orientation type polyimide alignment film glass substrate is in a semi-fired state (a semi-hardened film desolvated at about 80 ° C.) before complete firing (firing temperature: about 180 ° C.), the defective product may be a solvent such as N-methylpyrrolidone. The alignment film can be peeled off without corrosion of the aluminum thin film (wiring). However, in the case of the vertical alignment type polyimide alignment film, even if the semi-baked state is used, the solvent cannot peel off the polyimide alignment film (semi-fired). It is using, and aligning film peeling is performed (refer Unexamined-Japanese-Patent No. 6-306661). At this time, since the aluminum thin film (wiring) of the glass substrate is corroded, the aluminum thin film portion is protected by wax or the like, and then the wax is removed with a solvent such as hydrocarbon to regenerate the substrate, or the aluminum thin film is completely cleaned simultaneously with the alignment film. The method of regenerating only a glass substrate after peeling and dissolving easily is taken, and it causes the waste of raw materials and the fall of productivity.

따라서, 본 발명은, 상기와 같은 종래기술의 문제점을 해결하기 위하여, 폴리이미드막의 제거 성능이 우수할 뿐만 아니라, 알루미늄 부식성이 없는 폴리이미드 리무버 조성물을 제공하는 것을 목적으로 하며, 더불어서 컬럼스페이서의 탄성에 영향을 주지 않고 부식도 최소화되는 폴리이미드 리무버 조성물 을 제공하는 것을 목적으로 한다. Accordingly, an object of the present invention is to provide a polyimide remover composition which is not only excellent in the removal performance of the polyimide film but also free of aluminum corrosion, in order to solve the problems of the prior art as described above. It is an object of the present invention to provide a polyimide remover composition which does not affect and minimizes corrosion.

상기의 기술적 과제를 달성하기 위해서, 본 발명은 (A) 4급 암모늄수산화물, (B) 글리콜 에테르계 용제, (C) 당류 및 당알코올류로 이루어진 군으로부터 선 택되는 1종 이상의 성분, 및 (D) 물을 포함하는 폴리이미드 리무버 조성물을 제공한다.In order to achieve the above technical problem, the present invention provides at least one component selected from the group consisting of (A) quaternary ammonium hydroxide, (B) glycol ether solvent, (C) sugars and sugar alcohols, and ( D) A polyimide remover composition comprising water is provided.

본 발명의 폴리이미드 리무버 조성물에 사용되는 (A) 4급 암모늄수산화물의 예로는, 하기 화학식 1의 화합물을 들 수 있다.As an example of the (A) quaternary ammonium hydroxide used for the polyimide remover composition of this invention, the compound of following General formula (1) is mentioned.

[N-(R)(N- (R) 44 ]] ++ ·OHOH --

상기 식에서 R은 탄소수 1~4의 알킬기이다.In said formula, R is a C1-C4 alkyl group.

상기 화학식 1 화합물의 구체적인 예로는 수산화테트라메틸암모늄, 수산화테트라에틸암모늄, 수산화테트라프로필암모늄, 수산화테트라부틸암모늄 등을 들 수 있다. 이들 중에서 특히, 수산화테트라메틸암모늄(이하 'TMAH' 라 한다)이 바람직하다.Specific examples of the compound of Formula 1 include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide and the like. Among these, tetramethylammonium hydroxide (hereinafter referred to as 'TMAH') is preferable.

본 발명의 조성물에서 4급 암모늄수산화물은 1종 또는 2종 이상을 조합하여 사용할 수 있다.In the composition of the present invention, the quaternary ammonium hydroxide may be used alone or in combination of two or more thereof.

본 발명의 조성물에서 (A) 4급 암모늄수산화물은 조성물 총 중량에 대하여 0. 1∼20중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 0.1∼10중량%으로 포함되는 것이 좋다. 1중량% 미만으로 포함되는 경우에는 폴리이미드의 박리속도가 늦고, 20중량%를 초과하는 경우에는 배선재료의 부식을 방지할 수가 없다.The quaternary ammonium hydroxide (A) in the composition of the present invention is preferably contained in 0.1 to 20% by weight, more preferably 0.1 to 10% by weight relative to the total weight of the composition. When it contains less than 1 weight%, the peeling speed of a polyimide is slow, and when it exceeds 20 weight%, corrosion of a wiring material cannot be prevented.

본 발명의 조성물에서 사용되는 (B) 글리콜 에테르계 용제의 예로는, 하기 화학식 2의 화합물을 들 수 있다.As an example of the (B) glycol ether solvent used by the composition of this invention, the compound of following General formula (2) is mentioned.

R-O-(R-O- ( CHCH 22 CHCH 22 OO )) nn HH

상기 식에서 R은 탄소수 1~4의 알킬기이며, n은 1~3까지의 정수이다.In said formula, R is a C1-C4 alkyl group and n is an integer of 1-3.

상기 화학식 2 화합물의 구체적인 예로는, 에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노부틸에테르 등을 들 수 있으며, 이들 중 특히, 디에텔린글리콜 모노메틸에테르(이하 'MDG'라 한다)가 바람직하다. Specific examples of the compound of Formula 2 include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, and the like. And dietelin glycol monomethyl ether (hereinafter referred to as 'MDG') are preferable.

본 발명의 조성물에서 글리콜 에테르계 용제는 1종 또는 2종 이상을 조합하여 사용할 수 있다.In the composition of this invention, a glycol ether solvent can be used 1 type or in combination of 2 or more types.

발명의 조성물에서 (B) 글리콜 에테르계 용제는 조성물 총 중량에 대하여 50~95중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 80~95중량%로 포함되는 것이 좋다. 50중량% 미만으로 포함되면 폴리이미드의 제거성이 저하되며, 95중 량%를 초과하여 포함되면 배선재료의 부식이 증가한다.In the composition of the present invention, the (B) glycol ether solvent is preferably included in an amount of 50 to 95% by weight, and more preferably 80 to 95% by weight, based on the total weight of the composition. When included in less than 50% by weight, the removability of the polyimide is lowered, when contained in excess of 95% by weight increases the corrosion of the wiring material.

본 발명의 조성물에 사용되는 당류로서는 단당류, 다당류 등의 당류, 구체적인 예를 들면, 탄소수 3∼6의 글리세롤, 알데히드, 트레오스, 아라비노스, 크실로스, 리보스, 리블로스, 크실룰로스, 글루코스, 만노스, 갈락토스, 타가토스, 알로스, 알트로스, 글로스, 이도스, 탈로스, 소르보스, 프시코스, 과당 등을 들 수 있다.Examples of the sugars used in the composition of the present invention include sugars such as monosaccharides and polysaccharides, and specific examples thereof include glycerol having 3 to 6 carbon atoms, aldehyde, threose, arabinose, xylose, ribose, ribose, xylose, glucose, Mannose, galactose, tagatose, allose, altrose, gloss, idose, talos, sorbose, sicose, fructose and the like.

또, 당알코올류로서는 트레이톨, 에리트리톨, 아도니톨, 아라비톨, 크실리톨, 탈리톨, 소르비톨, 만니톨, 이디톨, 덜시톨 등을 들 수 있다.Examples of sugar alcohols include traceol, erythritol, adonitol, arabitol, xylitol, talitol, sorbitol, mannitol, iditol, dulcitol and the like.

이들 중 특히, 글루코스, 만노스, 갈락토스, 소르비톨, 만니톨 등이 용해성 및 배선재에 대한 방식성 등의 관점에서 바람직하다.Among these, glucose, mannose, galactose, sorbitol, mannitol, and the like are particularly preferable in view of solubility and corrosion resistance to wiring materials.

본 발명의 조성물에 사용되는 (C) 당류 및 당알코올류로 이루어진 군으로부터 선택되는 1종 이상의 성분은 조성물 총 중량에 대하여 0.1∼5중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 0.1∼3중량%로 포함되는 것이 좋다. 0.1중량% 미만으로 포함되는 경우에는 배선재의 부식을 충분히 방지할 수 없으며, 5중량%를 초과하여 포함되면 폴리이미드의 제거성이 저하되며, 또한 경제적인 면에서 이득이 없다..The at least one component selected from the group consisting of (C) sugars and sugar alcohols used in the composition of the present invention is preferably contained in 0.1 to 5% by weight based on the total weight of the composition, more preferably 0.1 to 3 It is preferably included in weight percent. If it is included in less than 0.1% by weight, it is not possible to sufficiently prevent the corrosion of the wiring material, when contained in more than 5% by weight, the removability of the polyimide is lowered, there is no economic benefit.

본 발명의 리무버 조성물은 이 분야에서 통상적으로 사용되는 첨가제로서 계 면활성제 등을 추가적으로 포함할 수 있다. The remover composition of the present invention may further include a surfactant and the like as an additive commonly used in the art.

본 발명의 폴리이미드 리무버 조성물을 사용하여 폴리이미드막을 제거하는 방법으로는 침지법이 일반적이지만 기타의 방법, 예를 들면 분무법에 의한 방법을 사용할 수도 있다. 또한, 본 발명에 의한 리무버 조성물로 처리한 후의 세정제로는 알코올과 같은 유기용매를 사용할 필요가 없고 물로 세정하는 것만으로도 충분하다.Although the dipping method is common as a method of removing a polyimide membrane using the polyimide remover composition of this invention, other methods, for example, the method by a spraying method, can also be used. In addition, as a cleaning agent after treating with the remover composition of the present invention, it is not necessary to use an organic solvent such as alcohol, and only washing with water is sufficient.

본 발명의 폴리이미드 리무버 조성물은 반도체 또는 전자제품 특히, 액정패널의 폴리이미드막의 제거 공정에서 유용하게 사용될 수 있다.The polyimide remover composition of the present invention can be usefully used in the process of removing a polyimide film of a semiconductor or electronic product, in particular, a liquid crystal panel.

이하에서, 본 발명을 실시예 등에 의하여 더욱 구체적으로 설명한다. 그러나, 하기의 실시예 등에 의해 본 발명의 범위가 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited by the following examples and the like.

실시예Example 1∼8 및  1 to 8 and 비교예Comparative Example 1∼4: 폴리이미드  1 to 4: polyimide 리무버Remover 조성물의 제조 Preparation of the composition

하기 표 1에 나타낸 조성비에 따라 각각의 성분을 혼합하여 실시예 1∼8 및 비교예 1∼4의 폴리이미드 리무버 조성물을 제조하였다.Each component was mixed according to the composition ratio shown in Table 1 below to prepare polyimide remover compositions of Examples 1-8 and Comparative Examples 1-4.

(A) 4급 암모늄수산화물(A) Quaternary Ammonium Hydroxide (B) 글리콜 에테르계 용제(B) Glycol Ether Solvent (C) 당류 및/또는 당알코올류(C) sugars and / or sugar alcohols 종류Kinds 중량%weight% 종류Kinds 중량%weight% 종류Kinds 중량%weight% 실
시
예room
city
Yes 1One 테트라메틸암모늄
하이드록사이드
(TMAH)Tetramethylammonium
Hydroxide
(TMAH) 22 디에틸렌글리콜
모노메틸에테르
(MDG)Diethylene glycol
Monomethyl ether
(MDG) 8585 소르비톨Sorbitol 22 22 TMAHTMAH 22 MDGMDG 8080 소르비톨Sorbitol 1.51.5 33 TMAHTMAH 22 MDGMDG 8585 소르비톨Sorbitol 1One 44 TMAHTMAH 22 MDGMDG 9090 소르비톨Sorbitol 0.50.5 55 TMAHTMAH 22 에틸렌글리콜
모노메틸에테르
(MG)Ethylene glycol
Monomethyl ether
(MG) 8080 소르비톨Sorbitol 22 66 테트라에틸암모늄
하이드록사이드
(TEAH)Tetraethylammonium
Hydroxide
(TEAH) 22 MGMG 8080 소르비톨Sorbitol 1.51.5 77 TMAHTMAH 22 MGMG 8585 소르비톨Sorbitol 1One 88 TMAHTMAH 22 MGMG 9090 소르비톨Sorbitol 0.50.5 비
교
예ratio
School
Yes 99 TMAHTMAH 22 부틸디클리콜
(BDG)Butyl Diclicol
(BDG) 8585 마니톨Mannitol 22 1010 TMAHTMAH 44 BDGBDG 8080 소르비톨Sorbitol 0.50.5 1111 테트라에틸암모늄
하이드록사이드
(TEAH)Tetraethylammonium
Hydroxide
(TEAH) 22 MDGMDG 8585 카테콜Catechol 0.50.5 1212 TMAHTMAH 22 MDGMDG 9090 --

*상기 표 1에서 실시예 및 비교예의 조성물은 잔량의 (D) 물을 포함한다.* The composition of Examples and Comparative Examples in Table 1 contains the residual amount of (D) water.

시험예Test Example ..

유리기판에 폴리이미드 박막이 형성된 시험편과 알루미늄 박막이 형성된 시험편을 각각 준비하고, 이를 실시예 1∼8 및 비교예 1∼4의 폴리이미드 리무버 조성물 각각에 10분간 침지시킨후 건조하고 광학현미경으로 관찰했다.A test piece in which a polyimide thin film was formed on a glass substrate and a test piece in which an aluminum thin film was formed were prepared, respectively, which were immersed in each of the polyimide remover compositions of Examples 1 to 8 and Comparative Examples 1 to 4 for 10 minutes, and then dried and observed with an optical microscope. did.

폴리이미드막 및 잔류물의 박리성과 알루미늄 배선의 부식성에 대한 평가 결과를 표 2에 나타냈다.Table 2 shows the results of evaluating the peelability of the polyimide film and the residue and the corrosiveness of the aluminum wiring.

<광학현미경관찰에 의한 박리성 평가기준><Evaluation Criteria for Peelability by Optical Microscopy>

○ : 완전히 제거되었다.(Circle): It removed completely.

△ : 일부 잔존이 확인되었다.(Triangle | delta): Some residual was confirmed.

× : 대부분이 잔존하고 있었다.X: Most remained.

<4 Point Prove 및 광학현미경에 의한 부식성 평가기준><Evaluation of Corrosion by 4 Point Prove and Optical Microscope>

○ : 부식은 전혀 확인되지 않았다.(Circle): Corrosion was not confirmed at all.

△ : 일부 부식이 확인되었다.(Triangle | delta): Partial corrosion was confirmed.

× : 심한 부식이 확인되었다X: Severe corrosion was confirmed

<PSIS-5001(SNU) CS 탄성 측정장비 사용에 의한 컬럼스페이서 탄성 평가 기준><Column spacer elasticity evaluation criteria using PSIS-5001 (SNU) CS elasticity measuring instrument>

○ : 컬럼스페이서의 탄성이 시험전대비 0.1% 이내로 유사하게 유지되었다.(Circle): The elasticity of the column spacer remained similar within 0.1% compared with the pretest.

△ : 탄성이 시험전대비 0.5% 저하되었다.(Triangle | delta): Elasticity fell 0.5% compared with the test.

× : 탄성이 시험전대비 1% 이상 저하되었다.X: Elasticity fell 1% or more compared with the test.

처리조건Treatment condition 박리성Peelability 알루미늄 부식성Aluminum corrosive 컬럼스페이서
탄성Column spacer
Shout 온도(℃)Temperature (℃) 침지시간(분)Immersion time (minutes) 실
시
예room
city
Yes 1One 5050 1010 OO OO OO 22 5050 1010 OO OO OO 33 5050 1010 OO OO OO 44 5050 1010 OO OO OO 55 5050 1010 OO OO OO 66 5050 1010 OO OO OO 77 5050 1010 OO OO OO 88 5050 1010 OO OO OO 비
교
예ratio
School
Yes 99 5050 1010 △△ △△ △△ 1010 5050 1010 OO △△ △△ 1111 5050 1010 OO △△ △△ 1212 5050 1010 OO XX XX

본 발명의 폴리이미드막 리무버 조성물은 기판 상에 도포된 폴리이미드막 또는 도포 후 고온에서 경화과정을 거친 폴리이미드막을 저온에서 단시간에 용이하게 박리시킬 수 있을 뿐만 아니라, 알루미늄 부식성이 없기 때문에, 간편하게 그리고 효과적으로 폴리이미드막 또는 기판상에 남아있는 유기물을 제거할 수 있다. 또한, 본 발명의 폴리이미드막 리무버 조성물은 컬럼스페이서의 탄성에 영향을 주지 않고 부식도 최소화 되는 우수한 특성을 갖는다.The polyimide film remover composition of the present invention can not only easily peel off the polyimide film applied on the substrate or the polyimide film that has been cured at a high temperature after application at a low temperature in a short time, but also has no aluminum corrosion resistance. The organic matter remaining on the polyimide film or the substrate can be effectively removed. In addition, the polyimide membrane remover composition of the present invention has an excellent characteristic of minimizing corrosion without affecting the elasticity of the column spacer.

Claims (7)

(A) 4급 암모늄수산화물 0.1~20중량%, (B) 에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 및 디에틸렌글리콜 모노부틸에테르로 이루어진 군으로부터 선택되는 1종 이상의 글리콜 에테르계 용제 50~95중량%, (C) 당류 및 당알코올류로 이루어진 군으로부터 선택되는 1종 이상의 성분 0.1∼5중량%, 및 잔량의 (D) 물을 포함하는 폴리이미드 리무버 조성물.(A) 0.1-20 wt% of quaternary ammonium hydroxide, (B) ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether 50 to 95% by weight of one or more glycol ether solvents selected from the group consisting of: (C) 0.1 to 5% by weight of one or more components selected from the group consisting of sugars and sugar alcohols, and the remaining amount of (D) water Polyimide remover composition comprising. 청구항 1에 있어서, (A) 4급 암모늄수산화물이 하기 화학식 1로 표시되는 것을 특징으로 하는 폴리이미드 리무버 조성물:The polyimide remover composition of claim 1, wherein (A) the quaternary ammonium hydroxide is represented by the following Chemical Formula 1:
Figure 112006095033224-pat00001
Figure 112006095033224-pat00001
 (1)(One) 상기 식에서 R은 탄소수 1~4의 알킬기이다.In said formula, R is a C1-C4 alkyl group. 청구항 2에 있어서, 화학식 1의 화합물이 수산화테트라메틸암모늄, 수산화테트라에틸암모늄, 수산화테트라프로필암모늄, 및 수산화테트라부틸암모늄으로 이루어진 군으로부터 선택되는 것임을 특징으로 하는 폴리이미드 리무버 조성물.The polyimide remover composition of claim 2, wherein the compound of Formula 1 is selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide. 삭제delete 삭제delete 청구항 1에 있어서, (C) 당류 및 당알코올류로 이루어진 군으로부터 선택되는 1종 이상의 성분이 탄소수 3∼6의 글리세롤, 알데히드, 트레오스, 아라비노스, 크실로스, 리보스, 리블로스, 크실룰로스, 글루코스, 만노스, 갈락토스, 타가토스, 알로스, 알트로스, 글로스, 이도스, 탈로스, 소르보스, 프시코스, 과당, 트레이톨, 에리트리톨, 아도니톨, 아라비톨, 크실리톨, 탈리톨, 소르비톨, 만니톨, 이디톨, 및 덜시톨로 이루어진 군으로부터 선택되는 것임을 특징으로 하는 폴리이미드 리무버 조성물.The method according to claim 1, wherein (C) at least one component selected from the group consisting of sugars and sugar alcohols is glycerol, aldehyde, throse, arabinose, xylose, ribose, ribose, xylulose having 3 to 6 carbon atoms , Glucose, mannose, galactose, tagatose, allose, altrose, gloss, idose, talos, sorbose, sicose, fructose, tracer, erythritol, adonitol, arabitol, xylitol, thalitol , Sorbitol, mannitol, iditol, and dulcitol. 삭제delete
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215736A (en) 2000-02-04 2001-08-10 Jsr Corp Photoresist removing solution composition, removing method and circuit board
JP2004133153A (en) 2002-10-10 2004-04-30 Tokyo Ohka Kogyo Co Ltd Cleaning liquid for photolithography and method for processing substrate
JP2004177740A (en) * 2002-11-28 2004-06-24 Asahi Kasei Electronics Co Ltd Resist stripper
JP2006317714A (en) * 2005-05-12 2006-11-24 Tokyo Ohka Kogyo Co Ltd Stripper for photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215736A (en) 2000-02-04 2001-08-10 Jsr Corp Photoresist removing solution composition, removing method and circuit board
JP2004133153A (en) 2002-10-10 2004-04-30 Tokyo Ohka Kogyo Co Ltd Cleaning liquid for photolithography and method for processing substrate
JP2004177740A (en) * 2002-11-28 2004-06-24 Asahi Kasei Electronics Co Ltd Resist stripper
JP2006317714A (en) * 2005-05-12 2006-11-24 Tokyo Ohka Kogyo Co Ltd Stripper for photoresist

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