KR101335313B1 - 화합물, 이를 포함하는 공중합체 및 상기 공중합체를 포함하는 레지스트 보호막 조성물 - Google Patents

화합물, 이를 포함하는 공중합체 및 상기 공중합체를 포함하는 레지스트 보호막 조성물 Download PDF

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Publication number
KR101335313B1
KR101335313B1 KR1020110051930A KR20110051930A KR101335313B1 KR 101335313 B1 KR101335313 B1 KR 101335313B1 KR 1020110051930 A KR1020110051930 A KR 1020110051930A KR 20110051930 A KR20110051930 A KR 20110051930A KR 101335313 B1 KR101335313 B1 KR 101335313B1
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KR
South Korea
Prior art keywords
group
formula
carbon atoms
protective film
resist protective
Prior art date
Application number
KR1020110051930A
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English (en)
Korean (ko)
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KR20120000496A (ko
Inventor
주현상
박주현
한준희
임현순
Original Assignee
금호석유화학 주식회사
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Application filed by 금호석유화학 주식회사 filed Critical 금호석유화학 주식회사
Priority to CN201110175221.9A priority Critical patent/CN102311344B/zh
Priority to TW100121806A priority patent/TWI462901B/zh
Priority to JP2011139999A priority patent/JP5368512B2/ja
Priority to SG2011046703A priority patent/SG177114A1/en
Publication of KR20120000496A publication Critical patent/KR20120000496A/ko
Application granted granted Critical
Publication of KR101335313B1 publication Critical patent/KR101335313B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/003—Esters of saturated alcohols having the esterified hydroxy group bound to an acyclic carbon atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/62—Halogen-containing esters
    • C07C69/63—Halogen-containing esters of saturated acids
    • C07C69/635—Halogen-containing esters of saturated acids containing rings in the acid moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020110051930A 2010-06-25 2011-05-31 화합물, 이를 포함하는 공중합체 및 상기 공중합체를 포함하는 레지스트 보호막 조성물 KR101335313B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201110175221.9A CN102311344B (zh) 2010-06-25 2011-06-22 化合物、包含所述化合物的共聚物和包含所述共聚物的抗蚀剂保护膜组合物
TW100121806A TWI462901B (zh) 2010-06-25 2011-06-22 化合物、含有該化合物的共聚合物及含有該共聚合物的抗蝕劑保護膜組成物
JP2011139999A JP5368512B2 (ja) 2010-06-25 2011-06-24 化合物、これを含む共重合体、及びその共重合体を含むレジスト保護膜組成物
SG2011046703A SG177114A1 (en) 2010-06-25 2011-06-24 Compound, copolymer comprising the compound, and resist protective film composition comprising the copolymer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100060587 2010-06-25
KR20100060587 2010-06-25

Publications (2)

Publication Number Publication Date
KR20120000496A KR20120000496A (ko) 2012-01-02
KR101335313B1 true KR101335313B1 (ko) 2013-12-03

Family

ID=45608361

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110051930A KR101335313B1 (ko) 2010-06-25 2011-05-31 화합물, 이를 포함하는 공중합체 및 상기 공중합체를 포함하는 레지스트 보호막 조성물

Country Status (3)

Country Link
KR (1) KR101335313B1 (zh)
SG (1) SG177114A1 (zh)
TW (1) TWI462901B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101434659B1 (ko) * 2012-10-15 2014-08-28 금호석유화학 주식회사 광산발생제 및 이를 포함하는 레지스트 조성물
JP7509068B2 (ja) 2020-04-28 2024-07-02 信越化学工業株式会社 フルオロカルボン酸含有モノマー、フルオロカルボン酸含有ポリマー、レジスト材料及びパターン形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009019199A (ja) * 2007-06-12 2009-01-29 Central Glass Co Ltd 含フッ素化合物、含フッ素高分子化合物、ポジ型レジスト組成物及びそれを用いたパターン形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5401910B2 (ja) * 2008-10-17 2014-01-29 セントラル硝子株式会社 重合性アニオンを有する含フッ素スルホン塩類とその製造方法、含フッ素樹脂、レジスト組成物及びそれを用いたパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009019199A (ja) * 2007-06-12 2009-01-29 Central Glass Co Ltd 含フッ素化合物、含フッ素高分子化合物、ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
TW201213300A (en) 2012-04-01
SG177114A1 (en) 2012-01-30
KR20120000496A (ko) 2012-01-02
TWI462901B (zh) 2014-12-01

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