KR101289230B1 - Light emitting device and method for manufacturing the same - Google Patents

Light emitting device and method for manufacturing the same Download PDF

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Publication number
KR101289230B1
KR101289230B1 KR1020070073253A KR20070073253A KR101289230B1 KR 101289230 B1 KR101289230 B1 KR 101289230B1 KR 1020070073253 A KR1020070073253 A KR 1020070073253A KR 20070073253 A KR20070073253 A KR 20070073253A KR 101289230 B1 KR101289230 B1 KR 101289230B1
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layer
conductive semiconductor
formed
semiconductor layer
light emitting
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KR1020070073253A
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Korean (ko)
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KR20090010285A (en
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김경준
손효근
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엘지이노텍 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

Abstract

In the embodiment, a light emitting device and a manufacturing method thereof are disclosed.
The light emitting device according to the embodiment includes a second electrode layer; A second conductive semiconductor layer formed on the second electrode layer; An active layer formed on the second conductive semiconductor layer; A first conductive semiconductor layer formed on the active layer; A first electrode layer formed on the first conductive semiconductor layer; And an insulating layer formed along an outer side surface of the second electrode layer and the second conductive semiconductor layer.
Light emitting element

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device,

In the embodiment, a light emitting device and a manufacturing method thereof are disclosed.

Light emitting diodes are widely used as light emitting elements.

In the light emitting diode, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer are stacked, and light is emitted from the active layer according to a power source to be emitted to the outside.

The embodiment provides a light emitting device and a method of manufacturing the same.

The embodiment provides a light emitting device having improved electrical characteristics and a method of manufacturing the same.

The light emitting device according to the embodiment includes a second electrode layer; A second conductive semiconductor layer formed on the second electrode layer; An active layer formed on the second conductive semiconductor layer; A first conductive semiconductor layer formed on the active layer; A first electrode layer formed on the first conductive semiconductor layer; And an insulating layer formed along an outer side surface of the second electrode layer and the second conductive semiconductor layer.

In one embodiment, a method of manufacturing a light emitting device includes: forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; Forming an insulating layer on an outer portion of the second conductive semiconductor layer; Forming a second electrode layer on the second conductive semiconductor layer and the insulating layer; And forming a first electrode layer on the first conductive semiconductor layer.

The embodiment can provide a light emitting device and a method of manufacturing the same.

The embodiment can provide a light emitting device having improved electrical characteristics and a method of manufacturing the same.

Hereinafter, a light emitting device according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings.

In describing an embodiment, it will be understood that when an element is described as being formed on / under another element, it will be understood that when an element is formed on / below directly in direct contact with another element, And indirectly in contact with another element via an intermediate element.

Hereinafter, a light emitting device according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings.

First Embodiment

1 is a cross-sectional view for describing a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device according to the first embodiment includes a second electrode layer 40, a second conductive semiconductor layer 16 formed on the second electrode layer 40, and a second conductive type. The active layer 15 formed on the semiconductor layer 16, the first conductive semiconductor layer 14 formed on the active layer 15, and the first electrode layer 22 formed on the first conductive semiconductor layer 14. This includes.

In addition, the second electrode layer 40 may include a metal layer 21, a reflective layer 20 formed on the metal layer 21, and a transparent electrode layer 19 formed on the reflective layer 20.

In addition, the insulating layer 18 is formed between the second electrode layer 40 and the second conductive semiconductor layer 16 along the side surface of the light emitting device.

The insulating layer 18 may be formed of a group III nitride layer having a thickness of 0.5 to 10 μm, for example, an Al x Ga 1-x N layer.

The first conductive semiconductor layer 14 has a top surface that is not formed to have a uniform height, and has a rugged surface including a convex portion and a concave portion.

In the light emitting device according to the first embodiment as described above, the insulating layer 18 is formed between the second conductive semiconductor layer 16 and the second electrode layer 40. It is possible to prevent the first conductive semiconductor layer 14 or the first electrode layer 22 and the second electrode layer 40 from being short-circuited.

That is, since the second conductive semiconductor layer 16 is formed very thin, the first conductive semiconductor layer 14 and the second electrode layer 40 are short-circuited, or the first electrode layer 22 and the Although a problem may occur in which the second electrode layer 40 is shorted, the light emitting device according to the first embodiment may be prevented from being shorted by the insulating layer 18.

In particular, in the light emitting device according to the first embodiment, since the insulating layer 18 may be formed of a nitride layer and have a thick thickness, it is effective in preventing short circuits.

2 to 6 illustrate a method of manufacturing the light emitting device according to the first embodiment.

2, a substrate 11, a buffer layer 12, an un-doped GaN layer 13, a first conductive semiconductor layer 14, an active layer 15, and a second conductive semiconductor layer 16. ) Are formed sequentially.

The mask layer 17 is formed on the second conductive semiconductor layer 16 at a position spaced apart from the outer portion.

The mask layer 17 may be SiO 2 , SiN.

Referring to FIG. 3, an insulating layer 18 is deposited on the second conductive semiconductor layer 16 on which the mask layer 17 is formed.

The insulating layer 18 may be formed of a Group III nitride layer, for example, an Al x Ga 1-x N layer.

In this case, the insulating layer 18 is not grown on the portion where the mask layer 17 is formed, and is grown only on the outer portion of the second conductive semiconductor layer 16 on which the mask layer 17 is not formed.

The insulating layer 18 is grown at 600 to 1200 ° C., and impurities of 6 × 10 15 to 3 × 10 17 / cm 3 are implanted. In this case, the resistance of the insulating layer 18 is larger than that of the heat-treated second conductive nitride layer, and is formed to have insulating properties at room temperature.

In the light emitting device according to the first embodiment, since the insulating layer 18 is formed of a nitride layer, a thick insulating layer 18 having a thickness of 0.5 to 10 μm may be formed.

In addition, since the insulating layer 18 is formed of a nitride layer, it may be formed in general MOCVD equipment.

Referring to FIG. 4, the mask layer 17 is removed. Therefore, only the insulating layer 18 remains on the second conductive semiconductor layer 16.

FIG. 7 is a view of the second conductive semiconductor layer on which the insulating layer is formed, viewed from above. FIG.

As illustrated in FIG. 7, the insulating layer 18 is formed along the outer portion of the second conductive semiconductor layer 16, and the second conductive semiconductor layer 16 is exposed at the center portion.

Referring to FIG. 5, a second electrode layer 40 is formed on the insulating layer 18 and the second conductive semiconductor layer 16.

The second electrode layer 40 may be formed by sequentially depositing the transparent electrode layer 19, the reflective layer 20, and the metal layer 21.

The transparent electrode layer 19 may be formed of ITO, TiO 2 , the reflective layer 20 may be formed of Al, Cu, Ni, Ag, and the metal layer 21 may be formed of Cu, W. .

Referring to FIG. 6, the substrate 11, the buffer layer 12, and the un-doped GaN layer 13 are removed.

The substrate 11, the buffer layer 12, and the un-doped GaN layer 13 may be removed by a laser or an etching process.

As the substrate 11, the buffer layer 12, and the un-doped GaN layer 13 are removed, the first conductive semiconductor layer 14 is exposed, and the semiconductor layer 14 of the first conductive semiconductor layer 14 is exposed. The upper surface is selectively etched to form an uneven surface.

Roughly processing the upper surface of the first conductive semiconductor layer 14 is to allow the light emitted from the active layer 15 to be efficiently emitted.

The first electrode layer 22 is formed on the first conductive semiconductor layer 14.

Although not shown in detail, the first electrode layer 22 may include a transparent electrode layer.

As described above, in the light emitting device according to the first embodiment, the insulating layer 18 is formed between the second electrode layer 40 and the second conductive semiconductor layer 16 along the outer side surface of the light emitting device. Thus, the electrical characteristics of the light emitting device can be improved.

Second Embodiment

8 is a cross-sectional view for describing a light emitting device according to a second embodiment.

Referring to FIG. 8, the light emitting device according to the second embodiment includes a second electrode layer 40, a second conductive semiconductor layer 16 formed on the second electrode layer 40, and a second conductive type. An active layer 15 formed on the semiconductor layer 16, a first conductive semiconductor layer 14 formed on the active layer 15, and a first electrode layer 50 formed on the first conductive semiconductor layer 14. This includes.

In addition, the second electrode layer 40 may include a metal layer 21, a reflective layer 20 and a transparent electrode layer 19 formed on the metal layer 21, and the first electrode layer 50 may be a transparent electrode layer 25. ), And the seed layer 23 formed on the transparent electrode layer 25 and the metal layer 24 formed on the seed layer 23.

In addition, the insulating layer 18 is formed between the second electrode layer 40 and the second conductive semiconductor layer 16 along the side surface of the light emitting device.

The insulating layer 18 may be formed of a Group III nitride layer having a thickness of 0.5 to 10 μm, for example, an Al x Ga 1-x N layer.

The upper surface of the first conductive semiconductor layer 14 and the lower surface of the second conductive semiconductor layer 16 are not formed to have a uniform height, but have an uneven surface including convex portions and concave portions.

In addition, the passivation layer 30 is formed on the side of the light emitting device.

The passivation layer 30 may be formed of at least one of SiO 2 , SiN, Al 2 O 3 , SU 8 , SiON, SiCN, and Group III nitride.

In the light emitting device according to the second embodiment as described above, the insulating layer 18 is formed between the first conductive semiconductor layer 14 and the second electrode layer 40. It is possible to prevent the first conductive semiconductor layer 14 or the first electrode layer 50 and the second electrode layer 40 from being short-circuited.

That is, since the second conductive semiconductor layer 16 is formed very thin, the first conductive semiconductor layer 14 and the second electrode layer 40 are short-circuited, or the first electrode layer 50 and the Although a problem may occur in which the second electrode layer 40 is shorted, the light emitting device according to the first embodiment may be prevented from being shorted by the insulating layer 18.

In particular, in the light emitting device according to the second exemplary embodiment, the insulating layer 18 may be formed of a nitride layer to have a thick thickness, which is effective for preventing a short circuit.

In addition, in the light emitting device according to the second embodiment, the passivation layer 30 is formed on an outer surface of the light emitting device to short-circuit the first conductive semiconductor layer 14 and the second electrode layer 40 by an external foreign matter. The short circuit between the first electrode layer 50 and the second electrode layer 40 can be prevented.

9 to 19 illustrate a method of manufacturing the light emitting device according to the second embodiment.

However, in describing the method of manufacturing the light emitting device according to the second embodiment, it is illustrated that two light emitting devices are manufactured on one substrate in order to help understand the process of forming the passivation layer 30.

9, the substrate 11, the buffer layer 12, the un-doped GaN layer 13, the first conductive semiconductor layer 14, the active layer 15, and the second conductive semiconductor layer 16. ) Are formed sequentially.

Referring to FIG. 10, an upper surface of the second conductive semiconductor layer 16 is selectively etched to form a rugged surface including convex portions and concave portions. In this case, the etching process may be a dry etching or wet etching process.

Referring to FIG. 11, a mask layer 17 is formed at a position spaced apart from an outer portion of the second conductive semiconductor layer 16. The mask layer 17 may be SiO 2 , SiN.

Referring to FIG. 12, an insulating layer 18 is deposited on the second conductive semiconductor layer 16 on which the mask layer 17 is formed.

The insulating layer 18 may be formed of a Group III nitride layer, for example, an Al x Ga 1-x N layer.

In this case, the insulating layer 18 is not grown on the portion where the mask layer 17 is formed, but is grown only on the outer portion of the second conductive semiconductor layer 16 on which the mask layer 17 is not formed.

The insulating layer 18 is grown at 600 to 1200 ° C., and impurities of 6 × 10 15 to 3 × 10 17 / cm 3 are implanted. In this case, the resistance of the insulating layer 18 is larger than that of the heat-treated second conductive nitride layer, and is formed to have insulating properties at room temperature.

In the light emitting device according to the second embodiment, since the insulating layer 18 is formed of a nitride layer, a thick insulating layer 18 having a thickness of 0.5 to 10 μm may be formed.

In addition, since the insulating layer 18 is formed of a nitride layer, it may be formed in general MOCVD equipment.

Referring to FIG. 13, the mask layer 17 is removed. Therefore, only the insulating layer 18 remains on the second conductive semiconductor layer 16.

The transparent electrode layer 19 is formed on the second conductive semiconductor layer 16 and the insulating layer 18.

Referring to FIG. 14, the passivation layer 30 is formed on the side of the light emitting device.

Referring to FIG. 15, the second electrode layer 40 is formed by forming the reflective layer 20 and the metal layer 21 on the passivation layer 30 and the transparent electrode layer 19.

The transparent electrode layer 19 may be formed of ITO, TiO 2 , the reflective layer 20 may be formed of Al, Cu, Ni, Ag, and the metal layer 21 may be formed of Cu, W. .

Referring to FIG. 16, the substrate 11, the buffer layer 12, and the un-doped GaN layer 13 are removed.

The substrate 11, the buffer layer 12, and the un-doped GaN layer 13 may be removed by a laser or an etching process.

As the substrate 11, the buffer layer 12, and the un-doped GaN layer 13 are removed, the first conductive semiconductor layer 14 and the passivation layer 30 are exposed.

Referring to FIG. 17, an upper surface of the first conductive semiconductor layer 14 is selectively etched to form an uneven surface.

Roughly processing the upper surface of the first conductive semiconductor layer 14 is to allow the light emitted from the active layer 15 to be efficiently emitted.

Referring to FIG. 18, a first electrode layer 50 is formed on the first conductive semiconductor layer 14.

The first electrode layer 50 may include a transparent electrode layer 25, a seed layer 23, and a metal layer 24.

As described above, in the light emitting device according to the second embodiment, the insulating layer 18 is formed along the outer side surface of the light emitting device between the second electrode layer 40 and the second conductive semiconductor layer 16. Thus, the electrical characteristics of the light emitting device can be improved.

In addition, the light emitting device according to the second embodiment may improve the electrical characteristics of the light emitting device by forming the passivation layer 30 on the side of the light emitting device.

1 is a cross-sectional view illustrating a light emitting device according to a first embodiment.

2 to 6 illustrate a method of manufacturing the light emitting device according to the first embodiment.

FIG. 7 is a view of the second conductive semiconductor layer in which the insulating layer is formed in the light emitting device according to the first embodiment, as viewed from above. FIG.

8 is a cross-sectional view illustrating a light emitting device according to a second embodiment.

9 to 19 illustrate a method of manufacturing a light emitting device according to the second embodiment.

Claims (19)

  1. A second electrode layer;
    A second conductive semiconductor layer formed on the second electrode layer;
    An active layer formed on the second conductive semiconductor layer;
    A first conductive semiconductor layer formed on the active layer;
    A first electrode layer formed on the first conductive semiconductor layer; And
    A light emitting device comprising an insulating layer formed of a group III nitride layer along the outer side surface between the second electrode layer and the second conductive semiconductor layer.
  2. A second electrode layer;
    A second conductive semiconductor layer formed on the second electrode layer;
    An active layer formed on the second conductive semiconductor layer;
    A first conductive semiconductor layer formed on the active layer;
    A first electrode layer formed on the first conductive semiconductor layer;
    An insulating layer formed along an outer side surface of the second electrode layer and the second conductive semiconductor layer;
    And a passivation layer formed on side surfaces of the insulating layer, the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer.
  3. 3. The method of claim 2,
    The passivation layer is a light emitting device, characterized in that formed on the second electrode layer.
  4. 3. The method of claim 2,
    The insulating layer is a light emitting device, characterized in that formed of a Group III nitride layer.
  5. The method according to claim 1 or 2,
    The insulating layer is a light emitting device, characterized in that the Al x Ga 1-x N layer.
  6. The method according to claim 1 or 2,
    The insulating layer is a light emitting device, characterized in that formed to a thickness of 0.5 ~ 10㎛.
  7. The method according to claim 1 or 2,
    And the second electrode layer includes a metal layer, a reflective layer formed on the metal layer, and a transparent electrode layer formed on the reflective layer.
  8. The method according to claim 1 or 2,
    The upper surface of the first conductive semiconductor layer has a rugged surface comprising a convex portion and a concave portion.
  9. The method according to claim 1 or 2,
    A lower surface of the second conductive semiconductor layer has a rugged surface including a convex portion and a concave portion.
  10. 3. The method of claim 2,
    The passivation layer is a light emitting device, characterized in that formed of at least one of SiO 2 , SiN, Al 2 O 3 , SU 8 , SiON, SiCN, Group III nitride.
  11. Forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
    Forming an insulating layer on an outer portion of the second conductive semiconductor layer;
    Forming a second electrode layer on the second conductive semiconductor layer and the insulating layer; And
    And forming a first electrode layer on the first conductive semiconductor layer.
  12. 12. The method of claim 11,
    The forming of the insulating layer may include forming a mask layer at a position spaced apart from an outer portion on the second conductive semiconductor layer, and forming an insulating layer on the second conductive semiconductor layer on which the mask layer is not formed. Forming and removing the mask layer, characterized in that it comprises a light emitting device.
  13. 12. The method of claim 11,
    The insulating layer is a light emitting device manufacturing method characterized in that formed of a group III nitride layer.
  14. 12. The method of claim 11,
    The insulating layer is a light emitting device manufacturing method, characterized in that the Al x Ga 1-x N layer.
  15. 12. The method of claim 11,
    The insulating layer is a light emitting device manufacturing method, characterized in that formed to a thickness of 0.5 ~ 10㎛.
  16. 13. The method of claim 12,
    The mask layer is a method of manufacturing a light emitting device, characterized in that formed of SiO 2 , SiN.
  17. 12. The method of claim 11,
    And forming a passivation layer on side surfaces of the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer, and the insulating layer.
  18. 18. The method of claim 17,
    The passivation layer is SiO 2 , SiN, Al 2 O 3 , SU 8 , SiON, SiCN, method of manufacturing a light emitting device, characterized in that formed with at least one of the group III nitride.
  19. 12. The method of claim 11,
    The insulating layer is grown at 600 ~ 1200 ℃, 6 × 10 15 ~ 3 × 10 17 / cm 3 Impurity of the light emitting device manufacturing method characterized in that the implant.
KR1020070073253A 2007-07-23 2007-07-23 Light emitting device and method for manufacturing the same KR101289230B1 (en)

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KR1020070073253A KR101289230B1 (en) 2007-07-23 2007-07-23 Light emitting device and method for manufacturing the same
US12/175,332 US7928449B2 (en) 2007-07-23 2008-07-17 Light emitting device and manufacturing method thereof
US13/049,683 US8455914B2 (en) 2007-07-23 2011-03-16 Light emitting device
US13/863,940 US8698181B2 (en) 2007-07-23 2013-04-16 Light emitting device

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US20110163342A1 (en) 2011-07-07
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