KR101232560B1 - 광중합성 조성물 및 이로부터 형성된 수지 경화층을 포함하는 광학시트 - Google Patents
광중합성 조성물 및 이로부터 형성된 수지 경화층을 포함하는 광학시트 Download PDFInfo
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Classifications
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
- C07D303/02—Compounds containing oxirane rings
- C07D303/12—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
- C07D303/18—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by etherified hydroxyl radicals
- C07D303/20—Ethers with hydroxy compounds containing no oxirane rings
- C07D303/22—Ethers with hydroxy compounds containing no oxirane rings with monohydroxy compounds
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/01—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to unsaturated polyesters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/02—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polycarbonates or saturated polyesters
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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Abstract
Description
실시예 1 | 실시예 2 | 실시예 3 |
실시예 4 |
실시예 5 |
실시예 6 |
실시예 7 |
실시예 8 |
참조 실시예1 |
||
자외선 경화형 단량체 (중량%) |
화학식 1 화합물 |
a,b,c=0, R, R2 내지 R11 = H |
a=1, b,c=0, m=2, R, R2 내지 R11 = H |
a=2, b,c=0, m=2, R, R2 내지 R11 = H |
a=15, b,c=0, m=2, R, R2 내지 R11 = H |
a=1 b,c=0, m=3 R, R2 내지 R11 = H |
a=1, b,c=0, m=4, R, R2 내지 R11 = H |
a=1, b,c=0, m=5, R, R2 내지 R11 = H |
a=1, b,c=0, m=10, R, R2 내지 R11 = H |
a=1, b,c=0, m=16, R, R2 내지 R11 = H |
함량 (중량%) |
99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | |
광개시제 (중량%) |
0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | |
조액 굴절율 (25℃) |
1.564 | 1.542 | 1.528 | 1.517 | 1.535 | 1.530 | 1.526 | 1.519 | 1.510 | |
도막굴절율 (25℃) |
1.588 | 1.564 | 1.551 | 1.541 | 1.558 | 1.552 | 1.550 | 1.541 | 1.535 |
실시예 9 | 실시예 10 | 실시예 11 |
실시예 12 |
실시예 13 |
실시예 14 |
실시예 15 |
실시예 16 |
참조 실시예2 |
||
자외선 경화형 단량체 (중량%) |
화학식 2 화합물 |
a,b,c=0, z=1 R, R2 내지 R11 = H |
a=1, b,c=0, m=2, z=1 R, R2 내지 R11 = H |
a=2, b,c=0, m=2, z=1 R, R2 내지 R11 = H |
a=15, b,c=0, m=2, z=1 R, R2 내지 R11 = H |
a=1 b,c=0, m=3 z=1 R, R2 내지 R11 = H |
a=1, b,c=0, m=4, z=1 R, R2 내지 R11 = H |
a=1, b,c=0, m=5, z=1 R, R2 내지 R11 = H |
a=1, b,c=0, m=10, z=1 R, R2 내지 R11 = H |
a=1, b,c=0, m=16, z=1 R, R2 내지 R11 = H |
함량 (중량%) |
99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | 99.5 | |
광개시제 (중량%) |
0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | |
조액 굴절율 (25℃) |
1.560 | 1.540 | 1.525 | 1.517 | 1.533 | 1.528 | 1.523 | 1.518 | 1.509 | |
도막굴절율 (25℃) |
1.581 | 1.562 | 1.549 | 1.540 | 1.555 | 1.550 | 1.546 | 1.540 | 1.532 |
실시예 17 | 실시예 18 | 실시예 19 | 실시예 20 | ||
자외선 경화형 단량체 |
화학식 2 화합물 |
a,b=1, c=0 m=2, x=3 y=0 R, R2 내지 R11 = H |
a,b,c=1, m=2, x=3, y=4 R, R2 내지 R11 = H |
a,b,c=1, m=3, x=4, y=10, R, R2 내지 R11 = H |
a,b,c=1, m=3, x=4, y=10, R, R2,R3내= CH3, R4 내지R11 = H |
함량 (중량%) |
99.5 | 99.5 | 99.5 | 99.5 | |
광개시제 (중량%) |
0.5 | 0.5 | 0.5 | 0.5 | |
조액 굴절율(25℃) | 1.580 | 1.575 | 1.545 | 1.538 | |
도막굴절율(25℃) | 1.602 | 1.596 | 1.564 | 1.550 |
Claims (10)
- 자외선 경화형 단량체로서 다음 화학식 1 또는 2로 표시되는 비스페놀 디아크릴레이트계 유도체를 포함하고, 25℃에서의 굴절율이 1.52 내지 1.68이며, 할로겐 원소를 포함하지 않는 광중합성 조성물.화학식 1화학식 2상기 화학식 1 내지 2에 있어서, a, b 및 c는 서로 같거나 다른 것으로 0 내지 15의 정수이고, z는 0 내지 15의 정수, m, x 및 y는 서로 같거나 다른 것으로 0 내지 15의 정수로 a, b 및 c가 0이 아닐 때 이에 대응하는 m, x 및 y도 0이 아니며, R 및 R2 내지 R11은 수소원자 또는 탄소수 1 내지 15의 알킬기, 탄소수 6 내지 30의 방향족 환, OH, SH 또는 탄소수 1 내지 15의 알킬치환 아미노기이다. .
- 제 1 항에 있어서, 상기 화학식 1 또는 2로 표시되는 비스페놀 디아크릴레이트계 유도체 이외의 자외선 경화형 단량체; 광개시제; 및 첨가제를 포함하는 광중합성 조성물.
- 자외선 경화형 단량체로서 다음 화학식 1 또는 2로 표시되는 비스페놀 디아크릴레이트계 유도체로부터 형성된 반복단위를 주골격으로 포함하고, 굴절율이 1.54 내지 1.68이며, 할로겐 원소를 포함하지 않는 수지 경화층;을 포함하는 광학시트.화학식 1화학식 2상기 화학식 1 내지 2에 있어서, a, b 및 c는 서로 같거나 다른 것으로 0 내지 15의 정수이고, z는 0 내지 15의 정수, m, x 및 y는 서로 같거나 다른 것으로 0 내지 15의 정수로 a, b 및 c가 0이 아닐 때 이에 대응하는 m, x 및 y도 0이 아니며, R 및 R2 내지 R11은 수소원자 또는 탄소수 1 내지 15의 알킬기, 탄소수 6 내지 30의 방향족 환, OH, SH 또는 탄소수 1 내지 15의 알킬치환 아미노기이다.
- 제 3 항에 있어서, 수지 경화층은 그 표면이 다수의 입체구조가 선형 또는 비선형적으로 배열되어 구조화된 형상을 갖는 것을 특징으로 하는 광학시트.
- 제 3 항에 있어서, 기재층을 포함하는 것을 특징으로 하는 광학시트.
- 자외선 경화형 단량체로서 다음 화학식 1 또는 2로 표시되는 비스페놀 디아크릴레이트계 유도체로부터 형성된 반복단위를 주골격으로 포함하고, 굴절율이 1.54 내지 1.68이며, 할로겐 원소를 포함하지 않는 수지 경화층;수지 경화층에 인접하여 형성된 광확산층; 및기재층을 포함하는 광학시트.화학식 1화학식 2상기 화학식 1 내지 2에 있어서, a, b 및 c는 서로 같거나 다른 것으로 0 내지 15의 정수이고, z는 0 내지 15의 정수, m, x 및 y는 서로 같거나 다른 것으로 0 내지 30의 정수로 a, b 및 c가 0이 아닐 때 이에 대응하는 m, x 및 y도 0이 아니며, R 및 R2 내지 R11은 수소원자 또는 탄소수 1 내지 15의 알킬기, 탄소수 6 내지 30의 방향족 환, OH, SH 또는 탄소수 1 내지 15의 알킬치환 아미노기이다.
- 삭제
- 제 3 항 또는 제 6 항에 있어서, 수지 경화층은 상기 화학식 1 또는 2로 표시되는 비스페놀 디아크릴레이트계 유도체 이외의 자외선 경화형 단량체; 광개시제; 및 첨가제를 포함하는 광중합성 조성물로부터 형성된 것임을 특징으로 하는 광학시트.
- 삭제
- 제 3 항 내지 제 6 항 중 어느 한 항의 광학시트를 적어도 한 층 이상 포함하는 백라이트 유닛 어셈블리.
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